CN116219401A - Coating production line - Google Patents

Abstract

The invention discloses a coating production line which can realize the connection of PECVD coating equipment and HWCVD coating equipment, improve the productivity and reduce the cost. Coating film production line includes: the horizontal HWCVD equipment comprises a first cavity, a hot wire module and a first horizontal conveying mechanism, wherein the first cavity is provided with a first coating cavity, the front side part of the first cavity is provided with a first inlet, the hot wire module is arranged in the first coating cavity, the hot wire module comprises a plurality of hot wire assemblies, the hot wire assemblies are arranged in an array manner in the horizontal direction, each hot wire assembly comprises a hot wire, each hot wire comprises a first vertical section, a second vertical section and a transverse section, and the first horizontal conveying mechanism is arranged in the first coating cavity; the horizontal PECVD device comprises a second cavity provided with a second coating cavity and a second horizontal conveying mechanism arranged in the second coating cavity, wherein a second outlet is arranged at the rear side part of the second cavity, and the second outlet is mutually communicated with the first inlet.

Description

Coating production line

Technical Field

The invention relates to the technical field of coating, in particular to a coating production line.

Background

The Hot Wire Chemical Vapor Deposition (HWCVD) coating equipment has the advantages of simple structure, less process parameters, high microcrystalline deposition rate and low equipment cost, and is common in the industry. At present, large-scale HWCVD coating equipment is of a vertical structure, a hot wire is fixed on an electrode at the top of a cavity, and the length of the hot wire is larger than the height of a vertical carrier plate and naturally sags. The vertical large HWCVD film plating equipment has the problems that automatic film loading and unloading are difficult to solve, and a substrate is loaded on a carrier plate generally and can only be loaded on the transverse carrier plate by using a vacuum chuck or a mechanical arm, so that the carrier plate needs to be switched from a horizontal state to a vertical state after the loading is finished, the carrier plate is easy to fall from the horizontal state to the vertical state, and the fragment rate is difficult to reach the standard.

There is also a small-sized HWCVD coating apparatus in the industry, which includes a plurality of heater wires arranged in parallel and horizontally placed, and two ends of each heater wire are clamped by mechanical mechanisms such as springs, so as to ensure that the heater wire does not sag during the heating and elongation process, and ensure uniformity of deposited film thickness. However, when the hot wire is rapidly heated to 1800 ℃, the hot wire is broken due to the fact that the tension of the clamping mechanism to the hot wire is large, the flatness of the hot wire cannot be guaranteed due to the fact that the tension is small, and reliability is low.

In addition, a plate-type plasma chemical vapor deposition (PECVD) film plating apparatus is used to deposit semiconductor films such as amorphous silicon and microcrystalline silicon, and the like, and the deposition apparatus is mainly used in the fields of semiconductors, photovoltaics and the like. The plate-type PECVD film plating equipment has good deposition effect of depositing microcrystals, but the deposition rate is too low, along with the increase of RF frequency, the equipment and electrode structures are more complex, the process difficulty is high, the equipment cost is greatly increased, and most of the plate-type PECVD equipment is of a horizontal structure at present.

From the above analysis, it is known that the deposition of the amorphous silicon intrinsic layer by the PECVD coating apparatus and the deposition of the microcrystalline silicon doped layer by the HWCVD coating apparatus are the best combinations, and if the two apparatuses are combined together, the productivity can be improved and the apparatus cost can be reduced, but the current large-sized HWCVD coating apparatus is difficult to be made into a horizontal structure, so that the PECVD coating apparatus and the HWCVD coating apparatus are difficult to form a production line.

Disclosure of Invention

The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a coating production line which can realize the connection between PECVD coating equipment and HWCVD coating equipment, improve the productivity and reduce the cost.

A coating line according to some embodiments of the present invention includes: the horizontal HWCVD equipment comprises a first cavity, a hot wire module and a first horizontal transport mechanism, wherein the first cavity is provided with a first film plating cavity, the front side part of the first cavity is provided with a first inlet, the rear side part of the first cavity is provided with a first outlet, the hot wire module is arranged in the first film plating cavity, the hot wire module comprises a plurality of hot wire assemblies, the hot wire assemblies are arranged in an array manner in the horizontal direction, each hot wire assembly comprises a hot wire, each hot wire comprises a first vertical section, a second vertical section and a transverse section, the first vertical section and the second vertical section are arranged at intervals in the horizontal direction, the two ends of the transverse section are respectively connected with the bottom end of the first vertical section and the bottom end of the second vertical section, the top end of the first vertical section and the top end of the second vertical section are respectively connected with the top of the first cavity, and the first horizontal transport mechanism is arranged in the first film plating cavity and is positioned below the hot wire module; the horizontal PECVD device comprises a second cavity provided with a second coating cavity and a second horizontal conveying mechanism arranged in the second coating cavity, wherein the front side part of the second cavity is provided with a second inlet, the rear side part of the second cavity is provided with a second outlet, and the second outlet is mutually communicated with the first inlet; the second horizontal conveying mechanism is used for bearing the transverse carrier plate and conveying the transverse carrier plate into the first coating cavity through the second outlet and the first inlet and transferring the transverse carrier plate onto the first horizontal conveying mechanism.

The coating production line provided by the embodiment of the invention has at least the following beneficial effects:

in the coating production line, in the horizontal HWCVD equipment, the hot wire module comprises a plurality of hot wire components, so that the hot wire components are arranged in an array manner in the horizontal direction, and the first horizontal conveying mechanism for bearing the transverse carrier plate is arranged below the hot wire module, so that the hot wire chemical vapor deposition coating equipment can be made into a horizontal structure. And, through adjusting the quantity of hot wire subassembly, can satisfy the coating film demand of equidimension base member, for example, the size of base member is bigger, can set up more hot wire subassemblies correspondingly. In addition, every hot wire all includes first vertical section, with the second vertical section that first vertical section set up along the horizontal direction interval, and connect the horizontal section between first vertical section and second vertical section, the both ends of horizontal section are connected with the bottom of first vertical section and the bottom of second vertical section respectively, first vertical section and second vertical section all are connected with the top of first cavity, so, can do the length of first vertical section, second vertical section and horizontal section short, make every hot wire after the circular telegram generates heat, also be difficult to take place to warp, can guarantee the homogeneity of deposit coating film, and this kind of hot wire also can not take place the fracture because of too big in tension, the reliability is high. In addition, when the coating production line is used, after the transverse carrier plate bearing the substrate enters the second coating cavity of the horizontal PECVD equipment, an amorphous silicon intrinsic layer can be deposited on the substrate, and after the amorphous silicon intrinsic layer is deposited, the transverse carrier plate bearing the substrate is conveyed into the first coating cavity through the second outlet and the first inlet by the second horizontal conveying mechanism and is transferred to the first horizontal conveying mechanism, the first horizontal conveying mechanism can move the transverse carrier plate to the lower part of the hot wire module, and the hot wire module can heat and catalyze gas in the first coating cavity, so that the gas is cracked to deposit a microcrystalline silicon doped layer on the substrate.

The invention can realize the connection between the HWCVD equipment and the horizontal PECVD equipment by making the HWCVD equipment into a horizontal structure. The coating production line combines the HWCVD process and the PECVD process, and utilizes the horizontal PECVD equipment to realize the deposition of the amorphous silicon intrinsic layer, so that the film quality of the amorphous silicon intrinsic layer can be ensured to be good, and the microcrystalline silicon doped layer can be deposited by utilizing the horizontal HWCVD equipment, so that the efficiency and the quality of the coating can be improved, the productivity can be improved, and the cost of the whole production line can be reduced by utilizing the horizontal HWCVD equipment to realize the deposition of the amorphous silicon intrinsic layer.

When the substrate is coated, the thickness of the microcrystalline silicon doped layer is thicker than that of the amorphous silicon intrinsic layer, so that the microcrystalline silicon doped layer is deposited by using the horizontal HWCVD equipment, the coating efficiency can be improved, the coating time of the substrate in the horizontal PECVD equipment is close to that in the horizontal HWCVD equipment, the coating beat is conveniently controlled, and the coating efficiency is improved.

According to some embodiments of the invention, the transport surface of the first horizontal transport mechanism is coplanar with the transport surface of the second horizontal transport mechanism.

According to some embodiments of the invention, the length of the first vertical section and the length of the second vertical section are each less than 100mm, and the length of the transverse section is less than 200mm.

According to some embodiments of the invention, the lateral sections of all the filaments are at the same level.

According to some embodiments of the invention, the first vertical section transitions arcuately with the lateral section, and the second vertical section transitions arcuately with the lateral section.

According to some embodiments of the invention, each of the hot wire assemblies further comprises a first electrode connected to the top end of the first vertical section and a second electrode connected to the top end of the second vertical section, and the first electrode and the second electrode are fixed to the top of the cavity.

According to some embodiments of the invention, the horizontal HWCVD apparatus further comprises a gas distribution module disposed within the coating cavity, and the gas distribution module is located above the lateral section.

According to some embodiments of the invention, the horizontal PECVD apparatus further comprises a lifting mechanism disposed in the second film plating chamber, and a heating element disposed on the lifting mechanism, wherein a feeding electrode is disposed on top of the second film plating chamber, and the lifting mechanism can drive the heating element to lift and jack up the transverse carrier plate disposed on the second horizontal transport mechanism, so as to change a distance between the transverse carrier plate and the feeding electrode.

According to some embodiments of the invention, the horizontal PECVD apparatus and the three horizontal HWCVD apparatuses are connected in sequence.

According to some embodiments of the invention, the coating production line further comprises a preheating device, wherein the preheating device is arranged in front of the horizontal PECVD device.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

The invention is further described with reference to the accompanying drawings and examples, in which:

FIG. 1 is a schematic diagram of a coating line according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of a horizontal HWCVD apparatus according to one embodiment of the present invention;

FIG. 3 is a schematic diagram of a hot wire assembly according to an embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view of a horizontal PECVD apparatus according to one embodiment of the invention;

fig. 5 is a schematic structural diagram of a film plating line according to an embodiment of the present invention.

Reference numerals:

100. a horizontal HWCVD apparatus; 110. a first cavity; 1101. a first film plating cavity; 1102. a first inlet; 1103. a first outlet; 111. a cavity body; 112. a cavity cover; 120. a hot wire assembly; 121. a hot wire; 1211. a first vertical section; 1212. a second vertical section; 1213. a transverse section; 122. a first electrode; 123. a second electrode; 130. a first horizontal transport mechanism; 140. a transverse carrier plate; 150. a gas distribution module;

200. a horizontal PECVD device; 210. a second cavity; 211. a second coating cavity; 212. a second inlet; 213. a second outlet; 220. a second horizontal transport mechanism; 230. a feed electrode; 240. a lifting mechanism; 250. a heating member; 260. a diffusion plate;

300. a transition cavity; 310. a third horizontal transport mechanism;

400. a preheating device;

500. a feeding cavity;

600. and (5) discharging the sheet cavity.

Detailed Description

Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and to simplify the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, features defining "first", "second" may include one or more such features, either explicitly or implicitly. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.

In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.

As shown in fig. 1, a coating line according to an embodiment of the present invention includes a horizontal HWCVD apparatus 100 and a horizontal PECVD apparatus 200.

As shown in fig. 2, the horizontal HWCVD apparatus 100 includes a first chamber 110, a hot wire module, and a first horizontal transport mechanism 130.

The first chamber 110 is provided with a first coating chamber 1101, and a front side portion of the first chamber 110 is provided with a first inlet 1102, and a rear side portion of the first chamber 110 is provided with a first outlet 1103.

Specifically, the first cavity 110 is a hollow structure with a first coating cavity 1101, the first inlet 1102 is disposed at a front side of the first cavity 110 and is in communication with the first coating cavity 1101, and the first outlet 1103 is disposed at a rear side of the first cavity 110 and is in communication with the first coating cavity 1101.

As shown in fig. 2, the filament module is disposed in the first film plating chamber 1101, and the filament module includes a plurality of filament assemblies 120, where the plurality of filament assemblies 120 are arranged in an array in a horizontal direction.

Specifically, the plurality of filament assemblies 120 are disposed in the first coating chamber 1101, and the plurality of filament assemblies 120 are arranged in an array in a horizontal direction. Specifically, the hot wire module is viewed from a bottom view or a top view, and the plurality of hot wire assemblies 120 are arranged in an array, i.e., the hot wire assemblies 120 are arranged in a plurality of rows and columns.

As shown in fig. 3, each filament assembly 120 includes a filament 121, each filament 121 includes a first vertical section 1211, a second vertical section 1212 spaced apart from the first vertical section 1211 in a horizontal direction, and a transverse section 1213 connected between the first vertical section 1211 and the second vertical section 1212, both ends of the transverse section 1213 are connected with a bottom end of the first vertical section 1211 and a bottom end of the second vertical section 1212, respectively, and a top end of the first vertical section 1211 and a top end of the second vertical section 1212 are connected with a top of the first cavity 110.

Specifically, the hot wire 121 can generate heat after being electrified, the hot wire 121 is approximately in a "U" shape, the first vertical section 1211 and the second vertical section 1212 are vertically arranged, the top end of the first vertical section 1211 and the top end of the second vertical section 1212 are connected with the top wall of the first film plating cavity 1101, and the first vertical section 1211 and the second vertical section 1212 are spaced apart in the horizontal direction. The transverse section 1213 is disposed transversely, and both ends of the transverse section 1213 are connected to the bottom ends of the first and second vertical sections 1211 and 1212, respectively.

It can be appreciated that the shape of the filament 121 is formed by bending a filament 121 at a corresponding position, and the first vertical section 1211, the second vertical section 1212 and the transverse section 1213 are integrally formed.

As shown in fig. 2, the first horizontal transport mechanism 130 is disposed inside the first coating chamber 1101 and below the hot wire module, and the first horizontal transport mechanism 130 is used for carrying the transverse carrier 140.

Specifically, the first horizontal transport mechanism 130 serves to transport the transverse carrier plate 140 horizontally on the one hand, and the first horizontal transport mechanism 130 also serves to carry the transverse carrier plate 140 on the other hand, so that the transverse carrier plate 140 is located below the hot wire module. The transverse carrier 140 is used for carrying a substrate, and the hot filament module can heat and catalyze the gas in the first film plating cavity 1101, so that the gas is cracked to plate a film on the substrate.

Wherein, the substrate can be a silicon wafer.

Referring to fig. 2 and 3, in the horizontal HWCVD apparatus 100, the filament module includes a plurality of filament assemblies 120, so that the plurality of filament assemblies 120 are arranged in an array in a horizontal direction, and a first horizontal transport mechanism 130 for carrying a transverse carrier 140 is disposed below the filament module, so that the filament 121 cvd coating apparatus can be made into a horizontal structure. Moreover, by adjusting the number of the hot wire assemblies 120, the coating requirements of substrates with different sizes can be met, for example, the larger the size of the substrate is, the more hot wire assemblies 120 can be correspondingly arranged. In addition, each hot wire 121 includes a first vertical section 1211, a second vertical section 1212 disposed at intervals along the horizontal direction with the first vertical section 1211, and a transverse section 1213 connected between the first vertical section 1211 and the second vertical section 1212, two ends of the transverse section 1213 are respectively connected with the bottom end of the first vertical section 1211 and the bottom end of the second vertical section 1212, and the first vertical section 1211 and the second vertical section 1212 are connected with the top of the first cavity 110, so that the lengths of the first vertical section 1211, the second vertical section 1212 and the transverse section 1213 can be made short, so that each hot wire 121 is difficult to deform after being electrified and heated, uniformity of deposited coating can be ensured, and the hot wire 121 is also free from breakage due to excessive tensile force, and has high reliability.

It can be appreciated that, in order to ensure heating uniformity and improve coating quality, the number of filament assemblies 120 can be increased, so that the length of the filament 121 in each filament assembly 120 can be reduced, and the lengths of the first vertical segment 1211, the second vertical segment 1212 and the transverse segment 1213 can be shortened, so that each filament 121 is difficult to deform after being electrified and heated, and the uniformity of deposited coating can be ensured.

As shown in fig. 4, the horizontal PECVD apparatus 200 includes a second chamber 210 and a second horizontal transport mechanism 220.

Referring to fig. 1 and 4, the second chamber 210 is provided with a second coating chamber 211, a front side portion of the second chamber 210 is provided with a second inlet 212, a rear side portion of the second chamber 210 is provided with a second outlet 213, and the second outlet 213 is mutually communicated with the first inlet 1102.

Specifically, the second cavity 210 is a hollow structure provided with a second coating cavity 211, the second inlet 212 is disposed at a front side of the second cavity 210 and is communicated with the second coating cavity 211, and the second outlet 213 is disposed at a rear side of the second cavity 210 and is communicated with the second coating cavity 211. The horizontal PECVD apparatus 200 is disposed upstream of the horizontal HWCVD apparatus 100 and communicates the second outlet 213 with the first inlet 1102 such that a coating can be achieved in the second coating chamber 211 after the substrate is transferred to the second coating chamber 211.

It should be noted that, in the use process of the coating line of the present invention, the first coating cavity 1101 and the second coating cavity 211 need to be kept in vacuum, and the second outlet 213 and the first inlet 1102 need to be kept in vacuum at the connection between the second outlet 213 and the first inlet 1102 after being communicated with each other. A transition chamber 300 may be further disposed between the horizontal PECVD apparatus 200 and the horizontal HWCVD apparatus 100, where the transition chamber 300 performs a transition function, and the transition chamber 300 enables the second outlet 213 to be indirectly communicated with the first inlet 1102.

The second horizontal transport mechanism 220 is disposed in the second coating chamber 211, and the second horizontal transport mechanism 220 is configured to carry a transverse carrier and transport the transverse carrier to the first coating chamber 1101 through the second outlet 213 and the first inlet 1102 and transfer the transverse carrier to the first horizontal transport mechanism 130.

Specifically, after the transverse carrier plate 140 carrying the substrate enters the second coating chamber 211 of the horizontal PECVD apparatus 200, an amorphous silicon intrinsic layer can be deposited on the substrate, and after the deposition of the amorphous silicon intrinsic layer is completed, the second horizontal transport mechanism 220 conveys the transverse carrier plate 140 carrying the substrate into the first coating chamber 1101 through the second outlet 213 and the first inlet 1102 and transfers the transverse carrier plate 140 carrying the substrate onto the first horizontal transport mechanism 130, the first horizontal transport mechanism 130 can move the transverse carrier plate 140 to the lower side of the hot filament module, and the hot filament module can heat and catalyze the gas in the first coating chamber 1101, so that the gas is cracked to deposit the microcrystalline silicon doped layer on the substrate.

Further, the transport surface of the first horizontal transport mechanism 130 is in the same plane as the transport surface of the second horizontal transport mechanism 220. In this way, it is ensured that the lateral carrier plate 140 is smoothly transported from the second plating chamber 211 into the first plating chamber 1101.

Specifically, in the coating line of the present invention, a transition chamber 300 is disposed between the horizontal PECVD apparatus 200 and the horizontal HWCVD apparatus 100, a third inlet is disposed at a front side of the transition chamber 300, a third outlet is disposed at a rear side of the transition chamber 300, the third inlet is disposed opposite to and communicates with the second outlet 213, the third outlet is disposed opposite to and communicates with the first inlet 1102, and the first inlet 1102, the first outlet 1103, the second inlet 212, the second outlet 213, the third inlet and the third outlet are at the same height. The third horizontal transport mechanism 310 is disposed in the transition cavity 300, and the transport plane of the first horizontal transport mechanism 130, the transport plane of the second horizontal transport mechanism 220, and the transport plane of the third horizontal transport mechanism 310 are in the same plane, so that the transverse carrier plate 140 can be ensured to be stably transported from the second film plating cavity 211 into the first film plating cavity 1101.

The transport surface of the first horizontal transport mechanism 130 is the upper surface of the first horizontal transport mechanism 130, the transport surface of the second horizontal transport mechanism 220 is the upper surface of the second horizontal transport mechanism 220, and the transport surface of the third horizontal transport mechanism 310 is the upper surface of the third horizontal transport mechanism 310.

In the coating production line of the present invention, in the horizontal HWCVD apparatus 100, the filament module includes a plurality of filament assemblies 120, so that the plurality of filament assemblies 120 are arranged in an array in a horizontal direction, and the first horizontal transport mechanism 130 for carrying the transverse carrier plate 140 is disposed below the filament module, so that the filament 121 chemical vapor deposition coating apparatus can be made into a horizontal structure. Moreover, by adjusting the number of the hot wire assemblies 120, the coating requirements of substrates with different sizes can be met, for example, the larger the size of the substrate is, the more hot wire assemblies 120 can be correspondingly arranged. In addition, each hot wire 121 includes a first vertical section 1211, a second vertical section 1212 disposed at intervals along the horizontal direction with the first vertical section 1211, and a transverse section 1213 connected between the first vertical section 1211 and the second vertical section 1212, two ends of the transverse section 1213 are respectively connected with the bottom end of the first vertical section 1211 and the bottom end of the second vertical section 1212, and the first vertical section 1211 and the second vertical section 1212 are connected with the top of the first cavity 110, so that the lengths of the first vertical section 1211, the second vertical section 1212 and the transverse section 1213 can be made short, so that each hot wire 121 is difficult to deform after being electrified and heated, uniformity of deposited coating can be ensured, and the hot wire 121 is also free from breakage due to excessive tensile force, and has high reliability. In addition, when the coating production line of the present invention is used, after the transverse carrier plate 140 carrying the substrate enters the second coating cavity 211 of the horizontal PECVD apparatus 200, an amorphous silicon intrinsic layer can be deposited on the substrate, and after the deposition of the amorphous silicon intrinsic layer is completed, the second horizontal transport mechanism 220 transports the transverse carrier plate 140 carrying the substrate into the first coating cavity 1101 through the second outlet 213 and the first inlet 1102 and transfers the transverse carrier plate 140 to the first horizontal transport mechanism 130, the first horizontal transport mechanism 130 can move the transverse carrier plate 140 to the lower part of the hot filament module, and the hot filament module can heat and catalyze the gas in the first coating cavity 1101, so that the gas is cracked to deposit the microcrystalline silicon doped layer on the substrate.

The present invention can realize the connection with the horizontal PECVD apparatus 200 by making the HWCVD apparatus into a horizontal structure. The coating production line combines the HWCVD process and the PECVD process, and utilizes the horizontal PECVD device 200 to realize the deposition of the amorphous silicon intrinsic layer, so that the film quality of the amorphous silicon intrinsic layer can be ensured to be good, and the microcrystalline silicon doped layer can be deposited by utilizing the horizontal HWCVD device 100, so that the efficiency and the quality of the coating can be improved, the productivity can be improved, and the cost of the whole production line can be reduced by utilizing the horizontal HWCVD device to realize the deposition of the amorphous silicon intrinsic layer.

When coating a substrate, the thickness of the microcrystalline silicon doped layer is thicker than that of the amorphous silicon intrinsic layer, so that the microcrystalline silicon doped layer is deposited by the horizontal HWCVD apparatus 100, the coating efficiency can be improved, so that the coating time of the substrate in the horizontal PECVD apparatus 200 is close to the coating time in the horizontal HWCVD apparatus 100, thereby facilitating control of the coating tact and improving the coating efficiency.

As shown in fig. 2 and 3, in the horizontal HWCVD apparatus 100, the length of the first vertical section 1211 and the length of the second vertical section 1212 are each less than 100mm, and the length of the lateral section 1213 is less than 200mm. Through heating verification, when the heating temperature of the hot wire 121 reaches 1800 ℃, the deformation of the hot wire 121 is almost negligible, and the uniformity of the deposited coating is not adversely affected.

More specifically, the length of the transverse segment 1213 may be set between 30mm and 200mm, and the length of the first vertical segment 1211 and the length of the second vertical segment 1212 may be set between 5mm and 100 mm.

Further, all the lateral sections 1213 of the heater wires 121 are at the same level, specifically, the lateral sections 1213 serve as deposition surfaces, and by making all the lateral sections 1213 of the heater wires 121 at the same level, uniformity of deposited coating film can be ensured.

Specifically, the lateral carrier plate 140 is located below the hot wire module, and the lateral carrier plate 140 is horizontally placed, so that the distance between the lateral section 1213 of each hot wire 121 and the lateral carrier plate 140 is kept the same by making the lateral sections 1213 of all the hot wires 121 at the same horizontal plane, and thus, uniformity of deposited coating can be ensured.

Further, the first vertical segment 1211 transitions arcuately with the lateral segment 1213, and the second vertical segment 1212 transitions arcuately with the lateral segment 1213. In this way, not only the first vertical section 1211 and the second vertical section 1212 can be formed by bending, but also the temperature of the transition position between the lateral section 1213 and the first vertical section 1211 and the second vertical section 1212 can be kept consistent with the temperature of other positions to a certain extent in the state where the hot wire 121 is at a high temperature, and the breakage of the transition position is suppressed.

Referring to fig. 2 and 3, in one embodiment, each hot wire assembly 120 further includes a first electrode 122 and a second electrode 123, the first electrode 122 is connected to the top end of the first vertical section 1211, the second electrode 123 is connected to the top end of the second vertical section 1212, and the first electrode 122 and the second electrode 123 are fixed to the top of the first cavity 110.

On the one hand, after the positive and negative electrodes of the power supply are respectively connected with the first electrode 122 and the second electrode 123, the heating of the hot wire 121 can be realized, on the other hand, the first electrode 122 and the second electrode 123 also play a role in supporting and fixing the hot wire 121, the purpose that the hot wire 121 is heated at high temperature and does not deform can be achieved by using the first electrode 122 and the second electrode 123 to support and fix the hot wire 121, the fixing mode is simple, and the transverse section 1213 can be supported by using other supporting pieces in the mode, so that the problem that the transverse section 1213 is contacted with other supporting pieces and is broken due to uneven heating during heating can be avoided.

As shown in fig. 2, in one embodiment, the horizontal HWCVD apparatus 100 further includes a gas distribution module 150, the gas distribution module 150 being disposed within the first coating chamber 1101, and the gas distribution module 150 being located above the lateral section 1213. The gas distribution module 150 is used for introducing gas into the first film plating cavity 1101, and the introduced gas can be cracked under the high temperature and the catalysis of the hot wire module to generate a solid reactant to be deposited on the surface of the substrate to form a film.

Specifically, the gas distribution module 150 includes a plurality of gas distribution pipes interposed between the first electrode 122 and the second electrode 123. Thus, the gas distribution uniformity can be improved, thereby improving the deposition uniformity.

As shown in fig. 2, in one embodiment, the first horizontal transport mechanism 130 includes a plurality of transmission members that are sequentially spaced from front to back. The plurality of driving members are used for carrying and transporting the transverse carrier 140.

Wherein the transfer member may be a transfer wheel or a transfer roller.

It should be noted that the plurality of transmission members are sequentially arranged at intervals from front to back in the horizontal direction, and the driving mechanism for driving the transmission members to rotate is arranged outside the first film plating chamber 1101, and the transmission members enter the first film plating chamber 1101 through magnetic fluid sealing.

As shown in fig. 2, in one embodiment, the first cavity 110 includes a cavity body 111 and a cavity cover 112, an opening is provided at the top of the cavity body 111, the cavity cover 112 covers the opening, and the hot wire module is connected with the cavity cover 112. In this way, the hot wire module can be assembled on the cavity cover 112, and then the cavity cover 112 is covered on the cavity body 111, so that the installation of the hot wire module is realized, and the installation is simple. And, dismantle the chamber lid 112 can realize the dismantlement of hot wire module, be favorable to the maintenance of hot wire module.

Specifically, the chamber cover 112 is detachably connected with the chamber body 111.

Wherein the chamber cover 112 may be removably secured to the chamber body 111 by bolts or other fasteners.

As shown in fig. 4, in the horizontal PECVD apparatus 200, it further includes a lifting mechanism 240 disposed in the second coating chamber 211, and a heating element 250 disposed on the lifting mechanism 240, where the feeding electrode 230 is disposed on top of the second coating chamber 211, and the lifting mechanism 240 can drive the heating element 250 to lift and jack up the transverse carrier 140 disposed on the second horizontal transport mechanism 220, so as to change the distance between the transverse carrier 140 and the feeding electrode 230.

After the gas enters the second film coating cavity 211 and reaches the film forming position under the action of the second horizontal transport mechanism 220, the lifting mechanism 240 lifts up the heating element 250 and makes the heating element 250 support the transverse carrier plate 140 away from the second horizontal transport mechanism 220, so that the deposition distance between the transverse carrier plate 140 and the feeding electrode 230 can be adjusted while heating the transverse carrier plate 140. When the gas enters the second film plating chamber 211, the RF high frequency generated by the feedthrough electrode 230 ionizes the gas and decomposes to form "charged" highly reactive radicals that fall onto the substrate surface to react, such as adhesion, migration, chemical bonding, etc., to form a film.

In this embodiment, the horizontal PECVD apparatus 200 is a plate PECVD apparatus.

It is to be understood that, in the present embodiment, the structure of the second horizontal transport mechanism 220 is the same as that of the first horizontal transport mechanism 130, and will not be described herein.

In one embodiment, as shown in fig. 4, the horizontal PECVD apparatus 200 further comprises a diffusion plate 260 disposed above the second coating chamber 211 and positioned above the second horizontal transport mechanism 220, wherein the gas is introduced into the second coating chamber 211 through the diffusion plate 260, and the diffusion plate 260 is used to more uniformly distribute the gas in the second coating chamber 211.

As shown in fig. 5, in the coating line of the present invention, the number of horizontal PECVD apparatuses 200 is one, the number of horizontal HWCVD apparatuses 100 is three, and the horizontal PECVD apparatuses 200 and the three horizontal HWCVD apparatuses 100 are sequentially connected.

Wherein the connection between the horizontal PECVD apparatus 200 and the first horizontal HWCVD apparatus 100 has been described above. In the adjacent two horizontal HWCVD apparatuses 100, it is necessary to ensure that the first plating chambers 1101 of the two horizontal HWCVD apparatuses 100 communicate with each other.

Wherein, the horizontal PECVD apparatus 200 can realize the deposition of an amorphous silicon intrinsic layer, and the three horizontal HWCVD apparatuses 100 can respectively deposit microcrystalline silicon doped layers.

Further, the coating production line further comprises a preheating device 400, the preheating device 400 is disposed in front of the horizontal PECVD device 200, and the preheating device 400 is used for preheating the substrate.

It will be appreciated that the preheating apparatus 400 is provided with a wafer feed chamber 500 at the front and a wafer discharge chamber 600 at the rear of the last horizontal HWCVD apparatus 100.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A coating line, comprising:

the horizontal HWCVD equipment comprises a first cavity, a hot wire module and a first horizontal transport mechanism, wherein the first cavity is provided with a first film plating cavity, the front side part of the first cavity is provided with a first inlet, the rear side part of the first cavity is provided with a first outlet, the hot wire module is arranged in the first film plating cavity, the hot wire module comprises a plurality of hot wire assemblies, the hot wire assemblies are arranged in an array manner in the horizontal direction, each hot wire assembly comprises a hot wire, each hot wire comprises a first vertical section, a second vertical section and a transverse section, the first vertical section and the second vertical section are arranged at intervals in the horizontal direction, the two ends of the transverse section are respectively connected with the bottom end of the first vertical section and the bottom end of the second vertical section, the top end of the first vertical section and the top end of the second vertical section are respectively connected with the top of the first cavity, and the first horizontal transport mechanism is arranged in the first film plating cavity and is positioned below the hot wire module;

the horizontal PECVD device comprises a second cavity provided with a second coating cavity and a second horizontal conveying mechanism arranged in the second coating cavity, wherein the front side part of the second cavity is provided with a second inlet, the rear side part of the second cavity is provided with a second outlet, and the second outlet is mutually communicated with the first inlet;

the second horizontal conveying mechanism is used for bearing the transverse carrier plate and conveying the transverse carrier plate into the first coating cavity through the second outlet and the first inlet and transferring the transverse carrier plate onto the first horizontal conveying mechanism.

2. The coating line of claim 1, wherein the transport surface of the first horizontal transport mechanism is coplanar with the transport surface of the second horizontal transport mechanism.

3. The coating line of claim 1, wherein the length of the first vertical section and the length of the second vertical section are both less than 100mm, and the length of the transverse section is less than 200mm.

4. The coating line of claim 1, wherein the transverse segments of all the filaments are in the same horizontal plane.

5. The coating line of claim 1, wherein the first vertical segment transitions arcuately with the transverse segment and the second vertical segment transitions arcuately with the transverse segment.

6. The coating line of claim 1, wherein each hot wire assembly further comprises a first electrode and a second electrode, the first electrode is connected to the top end of the first vertical section, the second electrode is connected to the top end of the second vertical section, and the first electrode and the second electrode are fixed to the top of the cavity.

7. The coating line of claim 1, wherein the horizontal HWCVD apparatus further comprises a gas distribution module disposed within the coating cavity and above the transverse section.

8. The coating production line according to claim 1, wherein the horizontal PECVD apparatus further comprises a lifting mechanism disposed in the second coating chamber, and a heating element disposed on the lifting mechanism, a feeding electrode is disposed on top of the second coating chamber, and the lifting mechanism can drive the heating element to lift and jack up the transverse carrier plate disposed on the second horizontal transport mechanism, so as to change a distance between the transverse carrier plate and the feeding electrode.

9. The coating line according to claim 1, wherein the horizontal PECVD apparatus and three horizontal HWCVD apparatuses are connected in sequence.

10. The coating line of claim 9, further comprising a preheating device disposed in front of the horizontal PECVD apparatus.

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