CN116218612A - Application of polyimide cleaning solution in cleaning semiconductor device - Google Patents

Application of polyimide cleaning solution in cleaning semiconductor device Download PDF

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CN116218612A
CN116218612A CN202111481390.5A CN202111481390A CN116218612A CN 116218612 A CN116218612 A CN 116218612A CN 202111481390 A CN202111481390 A CN 202111481390A CN 116218612 A CN116218612 A CN 116218612A
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ammonium
benzotriazole
methyl
tetraacetic acid
cysteine
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王溯
蒋闯
冯强强
詹杨
于仙仙
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Shanghai Xinyang Semiconductor Material Co Ltd
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention discloses an application of polyimide cleaning liquid in cleaning semiconductor devices. The cleaning liquid in the application comprises the following components in percentage by mass: 30% -80% of organic solvent, 0.001% -0.01% of reduced glutathione, 0.001% -0.25% of cysteine, 1% -5% of alcohol amine, 1% -5% of organic base, 0.01% -2% of chelating agent, 0.01% -2% of corrosion inhibitor, 0.5% -3% of ammonium carboxylate, 0.01% -1% of surfactant, 0.01% -2% of leveling agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent. The cleaning liquid has strong cleaning capability and low corrosion rate, and avoids complex processes such as plasma etching, ashing and the like.

Description

Application of polyimide cleaning solution in cleaning semiconductor device
Technical Field
The invention relates to an application of polyimide cleaning liquid in cleaning semiconductor devices.
Background
In the semiconductor device manufacturing process, a barrier layer is formed on a wafer after device structures, interconnect structures, and the like are formed thereon to protect internal devices. In the current technology, polyimide (polyimide) is commonly used as a barrier layer due to its excellent high temperature resistance, low temperature resistance, radiation resistance and excellent electrical insulation properties. However, in the process of forming polyimide on a wafer, the polyimide barrier layer formed at some time is unsatisfactory due to various abnormalities, and thus it is necessary to remove the polyimide barrier layer and reform the polyimide barrier layer which is satisfactory.
Polyimide is generally removed in the current process using a soluble organic solvent and oxygen plasma. For example, polyimide barrier removal at a thickness of 60 micrometers (um), a portion of the polyimide barrier is first removed by treatment with an organic solvent for 100 minutes, for example, to remove a polyimide barrier of 50 um; the remaining polyimide barrier was then removed by ashing (Ash) etching and observed by optical inspection for clean removal of the polyimide barrier. If ashed and etched residues exist, the ashed and etched residues are further cleaned, and whether the ashed and etched residues are removed completely is observed through optical detection. The methods have the problems that the treatment time is long, and an aluminum bonding pad and a dielectric layer on the surface of a wafer are easily damaged, so that the shipment and the production efficiency are affected.
Therefore, development of a polyimide cleaning solution is needed in the market, which can be directly used for cleaning polyimide layers, does not need complicated processes such as plasma etching and ashing, and can also compromise corrosion inhibition of metal and dielectric layers so as to solve the problems.
Disclosure of Invention
The invention aims to overcome the defects of complex process, long time, easy damage to metal or dielectric layers on the surface of a wafer and the like in the process of cleaning a polyimide layer in the prior art, and provides application of polyimide cleaning solution in cleaning a semiconductor device. The cleaning liquid has strong cleaning capability and low corrosion rate, and avoids complex processes such as plasma etching, ashing and the like.
The invention provides an application of a cleaning solution in cleaning polyimide on a silicon wafer;
the cleaning liquid comprises the following raw materials in percentage by mass: 30% -80% of organic solvent, 0.001% -0.01% of reduced glutathione, 0.001% -0.25% of cysteine, 1% -5% of alcohol amine, 1% -5% of organic base, 0.01% -2% of chelating agent, 0.01% -2% of corrosion inhibitor, 0.5% -3% of ammonium carboxylate, 0.01% -1% of surfactant, 0.01% -2% of leveling agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent; the mass fraction of each component is the mass fraction of the component in the polyimide cleaning liquid.
The cleaning liquid may be an organic solvent conventional in the art, preferably one or more of a sulfoxide solvent, a sulfone solvent, an imidazolidone solvent, a pyrrolidone solvent, an imidazolinone solvent, an amide solvent, and an alcohol ether solvent, more preferably one or more of a sulfoxide solvent, a sulfone solvent, and a pyrrolidone solvent.
The sulfoxide solvent can be dimethyl sulfoxide and/or methyl ethyl sulfoxide, preferably dimethyl sulfoxide.
The sulfone-based solvent may be methyl sulfone and/or sulfolane, preferably sulfolane.
The imidazolidinone solvent may be 2-imidazolidinone and/or 1, 3-dimethyl-2-imidazolidinone.
The pyrrolidone solvent may be N-methylpyrrolidone and/or N-cyclohexylpyrrolidone, preferably N-methylpyrrolidone.
The imidazolinone solvent may be 1, 3-dimethyl-2-imidazolinone.
The amide solvent may be N, N-dimethylformamide and/or N, N-dimethylacetamide.
The cleaning solution, the alcohol amine may be one or more of alcohol amines conventional in the art, preferably monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine, more preferably triethanolamine.
The cleaning solution, the organic base may be one or more of conventional organic bases in the art, preferably tetramethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraethyl ammonium hydroxide (TEAH), benzyl Trimethyl Ammonium Hydroxide (BTAH), choline, (2-hydroxyethyl) trimethyl ammonium hydroxide, tris (2-hydroxyethyl) methyl ammonium hydroxide, monoethanolamine (MEA), diglycolamine (DGA), triethanolamine (TEA), isobutolamine, isopropanolamine, tetrabutyl phosphonium hydroxide (TBPH) and tetramethyl guanidine, more preferably tetramethyl ammonium hydroxide (TMAH) and/or choline.
The cleaning solution, the chelating agent may be a chelating agent conventional in the art, preferably 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid (CDTA), ethylenediamine tetraacetic acid, nitrilotriacetic acid, diethylenetriamine pentaacetic acid, 1,4,7, 10-tetraazacyclododecane-1, 4,7, 10-tetraacetic acid, ethylene Glycol Tetraacetic Acid (EGTA), 1, 2-bis (o-aminophenoxy) ethane-N, N, N ', one or more of N' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine (HEDTA), ethylenediamine-N, N '-bis (2-hydroxyphenylacetic acid) (EDDHA), dioxaoctamethylenediaza tetraacetic acid (dotta) and triethylenetetramine hexaacetic acid (TTHA), more preferably ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N' -tetraacetic acid (CDTA).
The cleaning solution, the corrosion inhibitor can be a corrosion inhibitor conventional in the art, preferably Benzotriazole (BTA), tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1, 2, 4-triazole, 1-amino-1, 2, 4-benzotriazole, hydroxybenzotriazole, 2- (5-amino-pentyl) -benzotriazole, 1-amino-1, 2, 3-triazole, 1-amino-5-methyl-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 3-mercapto-1, 2, 4-triazole, 3-isopropyl-1, 2, 4-triazole, 5-thiophen-benzotriazole, halo-benzotriazole (halogen=F, cl, br or I), naphthotriazole 2-Mercaptobenzimidazole (MBI), 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole monohydrate, 5-amino-1, 3, 4-thiadiazole-2-thiol, 2, 4-diamino-6-methyl-1, 3, 5-triazine, thiazole, triazine, methyltetrazole, 1, 3-dimethyl-2-imidazolidinone, 1, 5-pentamethylene tetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1, 2, 4-triazole-3-thiol, one or more of 5-amino-1, 3, 4-thiadiazole-2-thiol and benzothiazole, more preferably benzotriazole and/or tolyltriazole.
The cleaning solution, the ammonium carboxylate may be ammonium carboxylate conventional in the art, preferably one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, tri-ammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediamine tetraacetate, diammonium ethylenediamine tetraacetate, tri-ammonium ethylenediamine tetraacetate, tetra-ammonium ethylenediamine tetraacetate, ammonium succinate, ammonium formate and ammonium 1-H-pyrazole-3-carboxylate, more preferably ammonium oxalate and/or tri-ammonium citrate.
The cleaning solution, the surfactant may be a surfactant conventional in the art, preferably EO-PO polymer L81.
The cleaning solution, the leveling agent may be a leveling agent conventional in the art, preferably 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole).
The cleaning liquid, the mass fraction of the organic solvent is preferably 40% -65%, for example 40%, 45%, 60% or 65%.
The mass fraction of the reduced glutathione in the washing liquid is preferably 0.005% to 0.01%, for example, 0.005% or 0.01%.
The mass fraction of the cysteine in the washing liquid is 0.15% -0.25%, such as 0.15% or 0.25%.
In one embodiment of the invention, the mass fraction of the organic solvent is 40% -65%; the organic solvent is one or more of N-methyl pyrrolidone, dimethyl sulfoxide or sulfolane;
the mass fraction of the reduced glutathione is 0.005% -0.01%;
the mass fraction of the cysteine is 0.15% -0.25%;
the organic base is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the corrosion inhibitor is benzotriazole and/or tolyltriazole;
the ammonium carboxylate is ammonium oxalate and/or ammonium citrate.
In one embodiment of the invention, the cleaning liquid comprises the following raw materials in percentage by mass: 30% -80% of organic solvent, 0.001% -0.01% of reduced glutathione, 0.001% -0.25% of cysteine, 1% -5% of alcohol amine, 1% -5% of organic base, 0.01% -2% of chelating agent, 0.01% -2% of corrosion inhibitor, 0.5% -3% of ammonium carboxylate, 0.01% -1% of surfactant, 0.01% -2% of leveling agent and water, and the balance is water;
wherein the types and mass fractions of the organic solvent, the reduced glutathione, the cysteine, the alcohol amine, the organic base, the chelating agent, the corrosion inhibitor, the ammonium carboxylate, the surfactant, the leveling agent and the water are as described above.
Preferably, the cleaning solution is prepared from the following raw materials in any formula:
scheme one: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme II: 40% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.15% of cysteine, 1% of triethanolamine, 1% of tetramethylammonium hydroxide, 0.01% of ethylenediamine tetraacetic acid, 0.01% of benzotriazole, 0.5% of ammonium oxalate, 0.01% of EO-PO polymer L81, 0.01% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme III: 60% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.25% of cysteine, 5% of triethanolamine, 5% of tetramethylammonium hydroxide, 2% of ethylenediamine tetraacetic acid, 2% of benzotriazole, 3% of ammonium oxalate, 1% of EO-PO polymer L81, 2% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme IV: 65% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme five: 40% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.15% of cysteine, 2.5% of triethanolamine, 5% of tetramethylammonium hydroxide, 2% of ethylenediamine tetraacetic acid, 2% of benzotriazole, 3% of ammonium oxalate, 1% of EO-PO polymer L81, 2% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme six: 45% dimethyl sulfoxide, 0.005% reduced glutathione, 0.25% cysteine, 2.5% triethanolamine, 2.5% tetramethylammonium hydroxide, 1% ethylenediamine tetraacetic acid, 0.5% benzotriazole, 1% ammonium oxalate, 0.05% EO-PO polymer L81, 0.7% 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole), and deionized water to make up the balance;
scheme seven: 45% sulfolane, 0.005% reduced glutathione, 0.25% cysteine, 2.5% triethanolamine, 2.5% tetramethylammonium hydroxide, 1% ethylenediamine tetraacetic acid, 0.5% benzotriazole, 1% ammonium oxalate, 0.05% EO-PO polymer L81, 0.7% 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole), and deionized water, the balance being made up;
scheme eight: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of choline, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme nine: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazol-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme ten: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of tolyltriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme eleven: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of triammonium citrate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water.
In the application, the temperature of the polyimide on the cleaned silicon wafer is preferably 60-90 ℃.
In the application, the time for cleaning polyimide on a silicon wafer is preferably 20 to 150 minutes.
In the application, the cleaning of the polyimide on the silicon wafer is preferably performed after completion of the cleaning, and preferably includes water washing (e.g., deionized water cleaning) and blow drying (e.g., nitrogen blow drying).
The invention also provides the cleaning liquid.
The invention provides a preparation method of the cleaning liquid, which comprises the following steps: which comprises the following steps: mixing the raw materials.
In the preparation method, the mixing is preferably to add the solid component in the raw materials into the liquid component and uniformly stir.
In the preparation method, the temperature of the mixing is preferably room temperature.
In the preparation method, preferably, the mixing is further followed by shaking for the purpose of thoroughly mixing the raw material components, filtration for removing insoluble matters, and the like.
As used herein, "room temperature" refers to 10-30deg.C.
On the basis of conforming to the common knowledge in the field, the above preferred conditions can be arbitrarily combined to obtain the preferred examples of the invention.
In the invention, 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) is self-made, and other used reagents and raw materials are commercially available.
The invention has the positive progress effects that: the cleaning liquid has strong cleaning capability and low corrosion to wafers, and avoids complex processes such as plasma etching, ashing and the like.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
Surfactants EO-PO Polymer L81, EO-PO Polymer L42, EO-PO Polymer L62, EO-PO Polymer L31 were purchased from Nantong Jinlai chemical Co., ltd.
Leveling agent 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole)
Figure BDA0003395355230000071
Prepared for homemade purposes as per CN105968127a example 1.
1. Examples 1-11 and comparative examples 1-19:
preparation of cleaning liquid
The cleaning liquid comprises the raw material components (namely an organic solvent, reduced glutathione, cysteine, alcohol amine, organic alkali, chelating agent, corrosion inhibitor, ammonium carboxylate, surfactant and leveling agent) and deionized water in the table 1; the raw material component contents of the cleaning liquid are those in table 2.
The raw material components in table 1 were added to the liquid raw material at room temperature according to the mass fraction in table 2, and after the balance was made up to 100% with deionized water, they were stirred uniformly. After mixing, the raw material components were thoroughly mixed by shaking, and insoluble matter was removed by filtration.
In the following examples, the specific operating temperatures are not limited, and all refer to being conducted under room temperature conditions.
Table 1: component species in the examples
Figure BDA0003395355230000072
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Figure BDA0003395355230000081
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Figure BDA0003395355230000091
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Figure BDA0003395355230000101
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Figure BDA0003395355230000111
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Figure BDA0003395355230000121
Table 2: example the cleaning solution comprises the components of the raw materials
Figure BDA0003395355230000122
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Figure BDA0003395355230000131
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Figure BDA0003395355230000141
The "balance" in the table is the mass percent of the components other than water subtracted from 100% in each example.
2. Effect examples
The testing steps are as follows:
performance measurements of the cleaning solutions of examples 1-11 and comparative examples 1-19 are shown in tables 3-4. The specific test method is as follows:
ER detection
Etching rate sample to be detected:
a dummy wafer (dummy wafer) of a single material such as aluminum, tungsten, titanium, silicon nitride, polysilicon, etc. is deposited on the silicon wafer.
Etching experiment:
and (3) at the temperature of 70 ℃, statically soaking a sample to be detected in a cleaning liquid for 60min, and then cleaning with deionized water and then drying with nitrogen.
The testing method comprises the following steps:
the thickness of the sample before and after etching was measured separately, wherein the thickness of the metal sample was measured using a four-point probe apparatus (CRESTEST-e of Napson, japan), the thickness of the non-metal sample was measured using an ellipsometer, and the thickness measurement of the silicon etching rate was measured using SEM.
2. Detection of cleaning effect
Cleaning effect sample to be detected:
patterned wafers containing polyimide layers of a certain thickness with patterned features (metal lines, holes via, metal pad or trench, etc.).
The testing method comprises the following steps:
and (3) at 70 ℃, the sample is statically immersed in a cleaning solution for 60min, and then is cleaned by deionized water and then dried by nitrogen. The cleaning and corrosion effects were observed with an electron microscope SEM.
Table 3: corrosion rate
Figure BDA0003395355230000151
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Figure BDA0003395355230000161
Table 4: cleaning effect and corrosion effect
Figure BDA0003395355230000162
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Figure BDA0003395355230000171
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Figure BDA0003395355230000181
The cleaning effect in the table is divided into four classes: a-no residue was observed; b-very little residue was observed; c-small residues were observed; d-significantly more residue was observed; the corrosion effects in the table are divided into four classes: a-compatibility is good, and undercut is avoided; b-very slight undercut; c-having a small undercut; d-undercut is more pronounced and severe.
According to the embodiment, the cleaning liquid disclosed by the invention can save cleaning procedures, and the corrosion rates of metal and dielectric layers on the device are low.

Claims (10)

1. Use of a cleaning solution for cleaning a polyimide layer on a silicon wafer, characterized by: the cleaning solution is prepared from the following raw materials in percentage by mass: 30% -80% of organic solvent, 0.001% -0.01% of reduced glutathione, 0.001% -0.25% of cysteine, 1% -5% of alcohol amine, 1% -5% of organic base, 0.01% -2% of chelating agent, 0.01% -2% of corrosion inhibitor, 0.5% -3% of ammonium carboxylate, 0.01% -1% of surfactant, 0.01% -2% of leveling agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent.
2. The use according to claim 1, wherein: the cleaning liquid satisfies one or more of the following conditions:
(1) The organic solvent is one or more of sulfoxide solvents, sulfone solvents, imidazolidinone solvents, pyrrolidone solvents, imidazolinone solvents, amide solvents and alcohol ether solvents; preferably one or more of sulfoxide solvents, sulfone solvents and pyrrolidone solvents;
(2) The alcohol amine is one or more of monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine;
(3) The cleaning solution comprises one or more of tetramethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraethyl ammonium hydroxide, benzyl trimethyl ammonium hydroxide, choline, (2-hydroxyethyl) trimethyl ammonium hydroxide, tri (2-hydroxyethyl) methyl ammonium hydroxide, monoethanolamine, diglycolamine, triethanolamine, isobutolamine, isopropanolamine, tetrabutyl phosphonium hydroxide and tetramethyl guanidine;
(4) The chelating agent is one or more of 1, 2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid, ethylenediamine tetraacetic acid, nitrilotriacetic acid, diethylenetriamine pentaacetic acid, 1,4,7, 10-tetraazacyclododecane-1, 4,7, 10-tetraacetic acid, ethylene glycol tetraacetic acid, 1, 2-bis (o-aminophenoxy) ethane-N, N, N ', N ' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine, ethylenediamine-N, N ' -bis (2-hydroxyphenylacetic acid), dioxaoctamethylenedinitrogen tetraacetic acid and triethylenetetramine hexaacetic acid;
(5) The cleaning solution is used for cleaning the surface of the substrate, the corrosion inhibitor is benzotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1, 2, 4-triazole, 1-amino-1, 2, 4-triazole, hydroxybenzotriazole, 2- (5-amino-pentyl) -benzotriazole, 1-amino-1, 2, 3-triazole, 1-amino-5-methyl-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 3-mercapto-1, 2, 4-triazole, 3-isopropyl-1, 2, 4-triazole, 5-phenylthiol-benzotriazole, halo-benzotriazole (halogen=f, cl, br or I), naphthazole, or a mixture thereof 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole monohydrate, 5-amino-1, 3, 4-thiadiazole-2-thiol, 2, 4-diamino-6-methyl-1, 3, 5-triazine, thiazole, triazine, methyltetrazole, 1, 3-dimethyl-2-imidazolidinone, 1, 5-pentamethylene tetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1, 2, 4-triazole-3-thiol, one or more of 5-amino-1, 3, 4-thiadiazole-2-thiol and benzothiazole;
(6) The cleaning solution comprises ammonium carboxylate, wherein the ammonium carboxylate is one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, ammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediamine tetraacetate, diammonium ethylenediamine tetraacetate, triammonium ethylenediamine tetraacetate, tetraammonium ethylenediamine tetraacetate, ammonium succinate, ammonium formate and ammonium 1-H-pyrazole-3-carboxylate;
(7) The cleaning liquid is characterized in that the surfactant is EO-PO polymer L81;
(8) The cleaning liquid is characterized in that the leveling agent is 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole).
3. The use according to claim 2, wherein: the cleaning liquid satisfies one or more of the following conditions:
(1) The sulfoxide solvent is dimethyl sulfoxide and/or methyl ethyl sulfoxide;
(2) The sulfone solvents are methyl sulfone and/or sulfolane;
(3) The imidazolidinone solvent is 2-imidazolidinone and/or 1, 3-dimethyl-2-imidazolidinone;
(4) The pyrrolidone solvent is N-methyl pyrrolidone and/or N-cyclohexyl pyrrolidone;
(5) The imidazolinone solvent is 1, 3-dimethyl-2-imidazolinone;
(6) The amide solvent is N, N-dimethylformamide and/or N, N-dimethylacetamide;
(7) The alcohol amine is triethanolamine;
(8) The organic base is tetramethyl ammonium hydroxide and/or choline;
(9) The chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
(10) The corrosion inhibitor is benzotriazole and/or tolyltriazole;
(11) The ammonium carboxylate is ammonium oxalate and/or ammonium citrate.
4. A use according to claim 3, wherein: the cleaning liquid satisfies one or more of the following conditions:
(1) The sulfoxide solvent is dimethyl sulfoxide;
(2) The sulfone solvent is sulfolane;
(3) The pyrrolidone solvent is N-methyl pyrrolidone.
5. The use according to claim 1, wherein: the cleaning liquid satisfies one or more of the following conditions:
(1) The mass fraction of the organic solvent in the cleaning liquid is 40% -65%;
(2) The mass fraction of the reduced glutathione in the cleaning liquid is 0.005% -0.01%;
(3) The mass fraction of the cysteine in the cleaning liquid is 0.15% -0.25%.
6. The use according to claim 5, wherein: the cleaning liquid satisfies one or more of the following conditions:
(1) The mass fraction of the organic solvent in the cleaning liquid is 40%, 45%, 60% or 65%;
(2) The mass fraction of the reduced glutathione in the cleaning liquid is 0.005% or 0.01%;
(3) The mass fraction of the cysteine in the cleaning liquid is 0.15% or 0.25%.
7. The use according to claim 1, wherein: the mass fraction of the organic solvent is 40% -65%; the organic solvent is one or more of N-methyl pyrrolidone, dimethyl sulfoxide or sulfolane;
the mass fraction of the reduced glutathione is 0.005% -0.01%;
the mass fraction of the cysteine is 0.15% -0.25%;
the organic base is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the corrosion inhibitor is benzotriazole and/or tolyltriazole;
the ammonium carboxylate is ammonium oxalate and/or ammonium citrate.
8. Use according to any one of claims 1 to 7, characterized in that: the cleaning liquid comprises the following raw materials in percentage by mass: 30 to 80 percent of organic solvent, 0.001 to 0.01 percent of reduced glutathione, 0.001 to 0.25 percent of cysteine, 1 to 5 percent of alcohol amine, 1 to 5 percent of organic alkali, 0.01 to 2 percent of chelating agent, 0.01 to 2 percent of corrosion inhibitor, 0.5 to 3 percent of ammonium carboxylate, 0.01 to 1 percent of surfactant, 0.01 to 2 percent of flatting agent and water, the balance being water,
the kind and mass fraction of the organic solvent, the reduced glutathione, the cysteine, the alcohol amine, the organic base, the chelating agent, the corrosion inhibitor, the ammonium carboxylate, the surfactant, the leveling agent and the water are as in any one of claims 1 to 7.
9. The use according to claim 1, wherein: the cleaning liquid consists of any one of the following formulas:
scheme one: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme II: 40% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.15% of cysteine, 1% of triethanolamine, 1% of tetramethylammonium hydroxide, 0.01% of ethylenediamine tetraacetic acid, 0.01% of benzotriazole, 0.5% of ammonium oxalate, 0.01% of EO-PO polymer L81, 0.01% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme III: 60% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.25% of cysteine, 5% of triethanolamine, 5% of tetramethylammonium hydroxide, 2% of ethylenediamine tetraacetic acid, 2% of benzotriazole, 3% of ammonium oxalate, 1% of EO-PO polymer L81, 2% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme IV: 65% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme five: 40% of N-methylpyrrolidone, 0.01% of reduced glutathione, 0.15% of cysteine, 2.5% of triethanolamine, 5% of tetramethylammonium hydroxide, 2% of ethylenediamine tetraacetic acid, 2% of benzotriazole, 3% of ammonium oxalate, 1% of EO-PO polymer L81, 2% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme six: 45% dimethyl sulfoxide, 0.005% reduced glutathione, 0.25% cysteine, 2.5% triethanolamine, 2.5% tetramethylammonium hydroxide, 1% ethylenediamine tetraacetic acid, 0.5% benzotriazole, 1% ammonium oxalate, 0.05% EO-PO polymer L81, 0.7% 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole), and deionized water to make up the balance;
scheme seven: 45% sulfolane, 0.005% reduced glutathione, 0.25% cysteine, 2.5% triethanolamine, 2.5% tetramethylammonium hydroxide, 1% ethylenediamine tetraacetic acid, 0.5% benzotriazole, 1% ammonium oxalate, 0.05% EO-PO polymer L81, 0.7% 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole), and deionized water, the balance being made up;
scheme eight: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of choline, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme nine: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.5% of benzotriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazol-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme ten: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of tolyltriazole, 1% of ammonium oxalate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water;
scheme eleven: 45% of N-methylpyrrolidone, 0.005% of reduced glutathione, 0.25% of cysteine, 2.5% of triethanolamine, 2.5% of tetramethylammonium hydroxide, 1% of ethylenediamine tetraacetic acid, 0.5% of benzotriazole, 1% of triammonium citrate, 0.05% of EO-PO polymer L81, 0.7% of 1- (benzotriazole-1-methyl) -1- (2-ethylimidazole) and the balance of deionized water.
10. The use according to claim 1, wherein: the temperature of polyimide on the silicon wafer is 60-90 ℃; the time for cleaning polyimide on the silicon wafer is 20-150min.
CN202111481390.5A 2021-12-06 2021-12-06 Application of polyimide cleaning solution in cleaning semiconductor device Pending CN116218612A (en)

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