CN116207161A - Side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure, working method and application - Google Patents

Side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure, working method and application Download PDF

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CN116207161A
CN116207161A CN202210532091.8A CN202210532091A CN116207161A CN 116207161 A CN116207161 A CN 116207161A CN 202210532091 A CN202210532091 A CN 202210532091A CN 116207161 A CN116207161 A CN 116207161A
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gate
side gate
channel
auxiliary
algan
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林兆军
周衡
吕元杰
刘阳
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Shandong University
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Shandong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

Compared with an open gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure, the invention introduces a side gate consisting of a pair of metal electrodes which are not contacted with a channel and are symmetrically distributed on two sides of the channel and have the same shape, and two-dimensional electron gas below the side gate does not participate in conduction, and only a drain-source channel is conducted, so that when the invention is used as a low-power-consumption A-type voltage amplifier, an input voltage signal can change from 0V to negative bias. Different device working modes can be obtained by applying different bias voltages to the side gate and the auxiliary gate, so that the invention is more flexible to be applied to circuits and is more suitable for the field of increasingly complex integrated circuits.

Description

Side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure, working method and application
Technical Field
The invention relates to a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure, a working method and application thereof, and belongs to the technical field of microelectronic research.
Background
GaN materials are an important representative of third generation semiconductors, and compared to first generation semiconductors and second generation semiconductors, gaN materials have a larger forbidden band width, a higher electron saturation drift velocity, and a larger breakdown field strength, and electronic devices based on GaN materials have been intensively studied and widely used. AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) are important representatives in GaN-based electronic devices, have the advantages of high electron mobility, high breakdown voltage and the like, and are widely applied to the fields of high frequency and high power.
The patent application document CN202110625371.9 before the inventor of the invention designs an open gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure, wherein a main gate is arranged to be an open gate structure, and an unopened auxiliary gate structure is introduced between the main gate and a drain electrode, so that the current-voltage saturation characteristic of the open gate device is effectively improved. Different device working modes can be obtained by applying different potentials to the main gate and the auxiliary gate, and the method is more suitable for the field of increasingly complex integrated circuits. However, a certain negative bias voltage needs to be applied to the main gate to make the two-dimensional electron gas under the main gate exhausted, i.e. the main gate region turned off, so that only the opening region turned on. In order to operate the transistor in the low power class a voltage amplifier mode, only the open region must be on, which requires that the input voltage signal be less than or equal to the negative bias voltage that turns off the main gate region, and cannot change from 0V to negative bias voltage.
Therefore, the research on the side gate AlGaN/GaN heterojunction field effect transistor which is conducted only in the opening area and can change the input voltage signal from 0V to negative bias voltage when the side gate AlGaN/GaN heterojunction field effect transistor works in the low-power consumption A-type voltage amplification working mode is huge in application value and urgent.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure only conducted in an opening area, and a working method and application thereof.
Interpretation of the terms
Channel (channel) refers to a thin semiconductor layer between a source region and a drain region in a field effect transistor in which current flow is controlled by a gate bias.
The technical scheme of the invention is as follows:
the device structure of the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure is similar to that of an open gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure, and the device structure comprises a source electrode, a drain electrode and a grid electrode, wherein the grid electrode is of a double-gate structure, the grid electrode comprises a side gate and an auxiliary gate, the side gate is a pair of metal electrodes which are not in contact with a channel, are symmetrically distributed on two sides of the channel and have the same shape, and the auxiliary gate is positioned on the channel between the source electrode and the drain electrode; the other areas except the areas where the source electrode, the drain electrode, the channel, the side gate and the auxiliary gate are located are etched to a certain depth, so that two-dimensional electron gas below the side gate is isolated, and is not communicated with two-dimensional electron gas in the channel or an electron system of the source electrode and the drain electrode.
According to the invention, preferably 0 < the distance between the side gate and the channel <10 μm.
Most preferably, the distance between the side gate and the channel is 2 μm.
According to the invention, it is preferred that 0 < the gate width <100 μm.
Most preferably, the gate width is 45 μm.
According to the invention, preferably, 0 < the length of the longest side gate <20 μm.
According to the invention, preferably, the length of the shortest part of the 0 < side gate is smaller than or equal to the length of the longest part of the side gate.
Most preferably, the length of the gate at its longest point is 14 μm, and the length of the gate at its shortest point is 10 μm. The channel is flat as the length and vertical as the width.
According to the present invention, preferably, 0 < the distance between the auxiliary gate and the drain is equal to or less than the distance between the source and the auxiliary gate.
According to the present invention, preferably, 0 < distance between source and auxiliary gate < distance between source and drain.
According to the invention, preferably, 0 < auxiliary gate length < distance between source and drain.
According to the present invention, it is preferable that the auxiliary gate width is equal to the channel width.
Most preferably, the distance between the source and the drain is 20 μm, and the auxiliary gate length is 2 μm, the distance between the source and the auxiliary gate is 16 μm, and the distance between the auxiliary gate and the drain is 2 μm.
According to the invention, preferably 0 < channel width <10 μm.
Most preferably, the channel width is 2 μm or 3 μm.
The invention has the side gate AlGaN/GaN heterojunction field effect transistor of the auxiliary gate, apply the invariable bias (0V or negative bias) on the auxiliary gate in normal operation, apply the bias of change on the side gate, change from 0V to negative bias along with bias on the side gate, under the same drain-source bias, the channel current is reduced along with the negative increase of bias of the side gate; when a certain negative bias is applied to the side gate, the channel is turned off, after which a more negative bias is applied to the side gate, and the channel current remains unchanged and is approximately 0A.
The physical mechanism of the side gate modulation channel current has two main aspects. On the one hand, the side gate generates a fringe electric field after a negative bias is applied to the side gate. The fringe electric field acts on the two-dimensional electron gas in the channel, which reduces the width of the two-dimensional electron gas in the channel but keeps the density of the two-dimensional electron gas unchanged. The more negative the bias applied to the side gate, the smaller the width of the two-dimensional electron gas in the channel, so the greater the channel resistance, the smaller the channel current. On the other hand, in AlGaN/GaN heterojunction field effect transistors, scattering mechanisms affecting two-dimensional electron gas mobility are mainly Polarized Optical Phonon (POP) scattering, polarized Coulomb Field (PCF) scattering, acoustic Deformation Potential (DP) scattering, piezoelectric (PE) scattering, interface roughness scattering (IFR) and Dislocation (DIS) scattering. Under certain conditions, the scattering mechanism other than polarized coulomb field scattering is only related to the density of the two-dimensional electron gas in the channel. Under a certain drain-source bias, the density of the two-dimensional electron gas in the channel does not change along with the bias change of the side gate, namely, the density of the two-dimensional electron gas is a fixed value, so that the scattering intensity of other scattering mechanisms on electrons does not change along with the bias change of the side gate. However, polarized coulomb field scattering is related not only to the density of the two-dimensional electron gas, but also to the additional polarized charge density at the AlGaN/GaN interface below the side gate. Thus, when the bias voltage applied to the side gate is more negative, the strain change of the AlGaN barrier layer under the side gate is larger due to the inverse piezoelectric effect, the additional polarized charge density at the AlGaN/GaN interface under the side gate is larger, the scattering of the two-dimensional electron gas by polarized coulomb field scattering is stronger, resulting in lower mobility of the two-dimensional electron gas, larger channel resistance, and smaller channel current.
Because the side gate is isolated from the channel by the trench with a certain width, the effect of the fringe electric field and polarized coulomb field scattering of the side gate on the two-dimensional electron gas in the channel is weak, and therefore the capability of the side gate on channel current modulation is weak. In this mode of operation, a negative bias of tens of volts is required on the side gate to turn off the channel, and thus the input voltage signal can vary widely. And because the etching groove isolates the side gate from the channel, the side gate from the source electrode and the side gate from the drain electrode, the two-dimensional electron gas under the side gate is not communicated with the two-dimensional electron gas in the channel and the electron system of the source electrode and the drain electrode, the two-dimensional electron gas under the side gate does not contribute to the channel current, and the width of the channel is small, so that the saturation current is small. The invention is therefore very suitable as a low power class a voltage amplifier.
The working method of the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure is characterized in that different bias voltages are applied to the side gate and the auxiliary gate to realize different working modes:
mode 1: applying a varying bias to the side gate and applying a constant bias to the auxiliary gate, the constant bias being 0V or negative bias, the channel current decreasing as the bias of the side gate increases negatively under the same drain-source bias as the bias on the side gate changes from 0V to negative bias; when a certain degree of negative bias is applied to the side gate, the channel is cut off, and thereafter a more negative bias is applied to the side gate, and the channel current remains unchanged and is approximately 0A; in the mode, under a certain drain-source bias voltage, the current of a channel changes along with the bias voltage change of the side gate, namely the current of the channel is regulated and controlled by the side gate; under a certain side gate bias, as the drain-source bias is increased, the current of the device enters a saturation region from a linear region, the pinch-off of a channel under an auxiliary gate is a cause of current saturation of the device, and the existence of the auxiliary gate enables the current-voltage saturation characteristic of the device to be good. The two-dimensional electron gas under the side gate does not participate in conduction, only the drain-source channel is conducted, and the channel width is narrow, so that the saturation current of the device is small. When the mode is used as a low-power-consumption class-A voltage amplifier, the input voltage signal has a large variation range and can change from 0V to negative bias.
Mode 2: applying a variable bias voltage to the auxiliary gate, applying a constant bias voltage to the side gate, wherein the constant bias voltage is 0V or negative bias voltage, and in the mode, the auxiliary gate regulates the channel current and the side gate regulates the channel resistance; the more negative the constant bias applied to the side gate, the greater the channel resistance, the more forward the threshold voltage of the device will shift, and the lower the transconductance of the device will be.
The side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure is applied to the preparation of an electronic integrated circuit, and the transistor in the electronic integrated circuit is the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure.
The invention is not described in detail and is in accordance with the prior art.
The invention has the beneficial effects that:
1. the invention is provided with the side gate (which is composed of a pair of metal electrodes which are not contacted with the channel and are symmetrically distributed on two sides of the channel and have the same shape), the two-dimensional electron gas under the side gate does not participate in conduction, only the drain-source channel is conducted, and the input voltage signal can change from 0V to negative bias under the low-power-consumption A-class voltage amplification working mode.
2. The four-terminal device is formed by the source electrode, the drain electrode, the side gate and the auxiliary gate, and various device working modes can be realized by applying different bias voltages to the side gate and the auxiliary gate.
Drawings
Fig. 1 is a schematic structural diagram of an open gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure used as a comparison in comparative example 1;
wherein S represents a source electrode, G represents a grid electrode, D represents a drain electrode, G11 represents a main grid electrode, and G22 represents an auxiliary grid electrode;
fig. 2 is a schematic structural diagram of a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure in embodiment 1 and embodiment 2 of the present invention;
wherein S represents a source electrode, G represents a gate electrode, D represents a drain electrode, G1 represents a side gate, and G2 represents an auxiliary gate.
Fig. 3a is a graph showing the current-voltage characteristic of the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure according to embodiment 1 of the present invention, wherein the device operates in mode 1 with voltage on the abscissa and current on the ordinate;
fig. 3b is a current-voltage characteristic curve of a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure according to embodiment 2 of the present invention, wherein the device operates in mode 1 with voltage on the abscissa and current on the ordinate;
fig. 3c is a current-voltage characteristic curve of the open gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure used as a comparison in comparative example 1, with voltage on the abscissa and current on the ordinate.
Fig. 3d is a transfer characteristic curve of a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure according to embodiment 2 of the present invention, wherein the device operates in mode 1 with voltage on the abscissa and current on the ordinate.
Fig. 3e is a transfer characteristic curve of a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure according to embodiment 1 of the present invention, wherein the device operates in mode 2; the abscissa is voltage and the ordinate is current.
Fig. 3f is a transconductance-voltage curve of a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure according to embodiment 1 of the present invention, where the device operates in mode 2 with voltage on the abscissa and transconductance on the ordinate.
Detailed Description
The invention will now be further illustrated by way of example, but not by way of limitation, with reference to the accompanying drawings.
Example 1:
a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure comprises a source electrode S, a drain electrode D, a side gate G1 and an auxiliary gate G2. The side gate is a pair of metal electrodes which are not contacted with the channel, are symmetrically distributed on two sides of the channel and have the same shape, and the auxiliary gate is positioned on the channel between the source electrode and the drain electrode; the other areas except the areas where the source electrode, the drain electrode, the channel, the side gate and the auxiliary gate are located are etched to a certain depth, so that two-dimensional electron gas below the side gate is isolated, and is not communicated with two-dimensional electron gas in the channel or an electron system of the source electrode and the drain electrode.
The device structure is shown in FIG. 2, the distance between the source and drain of the device (L SD ) Is 20 μm, the distance between the source and the auxiliary gate (L SG2 ) Is 16 μm, the distance between the auxiliary gate and the drain (L G2D ) Is 2 μm, the channel width (W 1 ) Is 2 μm, auxiliary gate width (W G2 ) Is 2 μm, the auxiliary gate length (L G2 ) Is 2 μm, the distance between the channel and the side gate (W 2 ) Is 2 μm, the shortest length of the side gate (L G1min ) Is 10 μm, the longest length (L G2max ) Is 14 μm, the side gate width (W G1 ) 45 μm. The channel is flat with length, i.e., length in the horizontal direction in fig. 2, and width in the vertical direction, i.e., width in the vertical direction in fig. 2.
Example 2:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: channel width (W) 1 ) Is 3 μm, auxiliary gate width (W G2 ) Is 3 μm.
Example 3:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: the distance between the side gate and the channel is 9 μm.
Example 4:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: the gate width is 95 μm.
Example 5:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: the shortest length of the side gate = the longest length of the side gate = 18 μm.
Example 6:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: distance between auxiliary gate and drain = distance between source and auxiliary gate = 9 μm.
Example 7:
a side gate AlGaN/GaN heterojunction field effect transistor having an auxiliary gate structure as described in example 1, except that: the channel width was 8 μm.
Example 8:
the application of the side gate AlGaN/GaN heterojunction field-effect transistor with the auxiliary gate structure in embodiment 1 in the preparation of an electronic integrated circuit, wherein the transistor in the electronic integrated circuit is the side gate AlGaN/GaN heterojunction field-effect transistor with the auxiliary gate structure.
Comparative example 1
The AlGaN/GaN heterojunction field effect transistor comprises an open gate with an auxiliary gate structure, a source electrode S, a drain electrode D and a gate electrode G positioned between the source electrode S and the drain electrode D, wherein the gate electrode G is of a double-gate structure, the gate electrode G comprises a main gate G11 and an auxiliary gate G22, the main gate G11 comprises a transverse opening, and two different working areas, namely a gate area and an opening area, are formed.
The device structure is shown in FIG. 1, the distance between the source and drain of the device (L SD ) 20 μm, main gate length (L G11 ) Is 12 μm, the distance between the main gate and the source (L G11S ) Is 2 μm, the distance between the main gate and the drain (L G11D ) A total channel width (W) of 20 μm at 6 μm, a width (W) O ) Is 3 μm, the auxiliary gate length is (L G22 ) Is 2 μm, the distance between the auxiliary gate and the drain (L G22D ) Is 2 μm. Fig. 1-2 are schematic structural diagrams of two different structures of AlGaN/GaN heterojunction field effect transistors.
Test examples
By applying different bias voltages to the side gate and the auxiliary gate, the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure can realize various working modes.
Mode 1: a variable bias voltage is applied to the side gate, and a constant bias voltage (0V or negative bias voltage) is applied to the auxiliary gate. In the mode, under a certain drain-source bias voltage, the current of a channel changes along with the bias voltage change of the side gate, namely the current of the channel is regulated and controlled by the side gate; under a certain side gate bias, as the drain-source bias is increased, the current of the device enters a saturation region from a linear region, the pinch-off of a channel under an auxiliary gate is a cause of current saturation of the device, and the existence of the auxiliary gate enables the current-voltage saturation characteristic of the device to be good. The two-dimensional electron gas under the side gate does not participate in conduction, only the drain-source channel is conducted, and the channel width is narrow, so that the saturation current of the device is small. When the mode is used as a low-power-consumption class-A voltage amplifier, the input voltage signal has a large variation range and can change from 0V to negative bias.
Mode 2: a variable bias voltage is applied to the auxiliary gate, and a constant bias voltage (0V or negative bias voltage) is applied to the bypass gate. In this mode, the auxiliary gate regulates the channel current and the side gate regulates the channel resistance. The more negative the constant bias applied to the side gate, the greater the channel resistance, the more forward the threshold voltage of the device will shift, and the lower the transconductance of the device will be.
Fig. 3a to 3c are current-voltage characteristic curves of AlGaN/GaN heterojunction field effect transistors of example 1, example 2 and comparative example 1 of the present invention, respectively.
Fig. 3a corresponds to example 1 operating in mode 1, fig. 3b corresponds to example 2 operating in mode 1, and fig. 3c corresponds to comparative example 1. Fig. 3d is a transfer characteristic of example 2 operating in mode 1. Fig. 3e shows the transfer characteristic of example 1 operating in mode 2, and fig. 3f shows the transconductance-voltage curve of example 1 operating in mode 2.
As can be seen from fig. 3a, when embodiment 1 is operated in mode 1, the gate bias voltage on the side gate changes from 0V to negative bias, the saturation current of the device is small, the transconductance is low, which indicates that the side gate has weak capability of modulating the channel current but a large regulation range, and the threshold voltage is about-20V. As can be seen from fig. 3b, the threshold voltage of example 2 operating in mode 1 is about-35V, because the channel width of example 2 is 3 μm, the channel width of example 1 is 2 μm, and the larger the channel width is, the more negative the threshold voltage is, and the larger the control range of the side gate is. As can be seen from fig. 3c, in comparative example 1, the saturation current of the device can be small and the transconductance can be low only when the gate bias of the open gate is applied to-3V. Comparative example 1 the saturation current of the device is large and the transconductance is large when the gate bias of the open gate is in the range of 0 to-3V. Therefore, when the side gate AlGaN/GaN heterojunction field effect transistor having the auxiliary gate structure is used as the low power consumption a-type voltage amplifier, the input voltage signal can be changed from 0V to negative bias voltage, as compared with the open gate AlGaN/GaN heterojunction field effect transistor having the auxiliary gate structure.
As can be seen from fig. 3d, when example 2 is operated in mode 1, the more negative the constant bias applied to the auxiliary gate, the smaller the channel current at the same side gate bias.
As can be seen from fig. 3e, when embodiment 1 is operating in mode 2, the more negative the constant bias applied to the bypass gate, the more positively the threshold voltage of the device is shifted.
As can be seen from fig. 3f, the more negative the constant bias applied to the shunt gate, the lower the transconductance of the device when embodiment 1 is operating in mode 2.

Claims (10)

1. The side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure is characterized by comprising a source electrode, a drain electrode and a grid electrode, wherein the grid electrode is of a double-gate structure, the grid electrode comprises a side gate and an auxiliary gate, the side gate is a pair of metal electrodes which are not in contact with a channel, are symmetrically distributed on two sides of the channel and have the same shape, and the auxiliary gate is positioned on the channel between the source electrode and the drain electrode; other regions are etched to a certain depth except for the regions where the source, drain, channel, side gate and auxiliary gate are located.
2. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < distance between side gate and channel <10 μm;
preferably, the distance between the side gate and the channel is 2 μm.
3. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < side gate width <100 μm;
preferably, the gate width is 45 μm.
4. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < the length of the longest point of the side gate <20 μm.
5. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < the length of the shortest part of the side gate is equal to or less than the length of the longest part of the side gate;
preferably, the length of the longest side gate is 14 μm, and the length of the shortest side gate is 10 μm.
6. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < distance between auxiliary gate and drain is equal to or less than distance between source and auxiliary gate, 0 < auxiliary gate length < distance between source and drain;
preferably, the distance between the source and the drain is 20 μm, and the auxiliary gate length is 2 μm, the distance between the source and the auxiliary gate is 16 μm, and the distance between the auxiliary gate and the drain is 2 μm.
7. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein the auxiliary gate width is equal to the channel width.
8. The side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure according to claim 1, wherein 0 < channel width <10 μm;
preferably, the channel width is 2 μm or 3 μm.
9. The working method of the side gate AlGaN/GaN heterojunction field effect transistor with the auxiliary gate structure is characterized in that different working modes are realized by applying different biases to the side gate and the auxiliary gate:
mode 1: applying a varying bias to the side gate and applying a constant bias to the auxiliary gate, the constant bias being 0V or negative bias, the channel current decreasing as the bias of the side gate increases negatively under the same drain-source bias as the bias on the side gate changes from 0V to negative bias; when a certain degree of negative bias is applied to the side gate, the channel is cut off, and thereafter a more negative bias is applied to the side gate, and the channel current remains unchanged and is approximately 0A; in the mode, under a certain drain-source bias voltage, the current of a channel changes along with the bias voltage change of the side gate, and the current of the channel is regulated and controlled by the side gate; under a certain side gate bias, as the drain-source bias increases, the device current enters a saturation region from a linear region;
mode 2: applying a variable bias voltage to the auxiliary gate, applying a constant bias voltage to the side gate, wherein the constant bias voltage is 0V or negative bias voltage, and in the mode, the auxiliary gate regulates the channel current and the side gate regulates the channel resistance; the more negative the constant bias applied to the side gate, the greater the channel resistance, the more forward the threshold voltage of the device will shift, and the lower the transconductance of the device will be.
10. A side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure for use in the manufacture of an electronic integrated circuit, wherein the transistor in the electronic integrated circuit is a side gate AlGaN/GaN heterojunction field effect transistor with an auxiliary gate structure as claimed in any one of claims 1 to 8.
CN202210532091.8A 2022-04-29 2022-04-29 Side gate AlGaN/GaN heterojunction field effect transistor with auxiliary gate structure, working method and application Pending CN116207161A (en)

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