CN116206953A - Metal stripping method for one-time exposure and one-time development of three-layer adhesive of wafer with groove - Google Patents

Metal stripping method for one-time exposure and one-time development of three-layer adhesive of wafer with groove Download PDF

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CN116206953A
CN116206953A CN202211487546.5A CN202211487546A CN116206953A CN 116206953 A CN116206953 A CN 116206953A CN 202211487546 A CN202211487546 A CN 202211487546A CN 116206953 A CN116206953 A CN 116206953A
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layer
photoresist
stripping
wafer
metal
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刘阿娟
侯鹏
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Shaanxi Optoelectronic Pilot Institute Technology Co ltd
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Shaanxi Optoelectronic Pilot Institute Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention discloses a metal stripping method for one-time exposure and one-time development of three layers of photoresist of a wafer with a groove, which comprises the steps of sequentially spin-coating or spraying a first layer of photosensitive photoresist, a non-photosensitive photoresist and another layer of photosensitive photoresist in grooves on the surface of the wafer, selecting a photoetching plate for one-time exposure, and sequentially carrying out one-time development, metal sputtering, ultrasonic soaking and stripping. After photoetching development, the groove photoresist can be completely cleaned, the transverse length of the chamfer of the outer platform of the groove can reach about 1.1-2.3 microns, no metal adhesion at the chamfer is met during subsequent metal sputtering, the stripping requirement can be met, and the effects of easy stripping and no residual metal at the edge of the pattern are achieved.

Description

Metal stripping method for one-time exposure and one-time development of three-layer adhesive of wafer with groove
Technical Field
The invention belongs to the technical field of semiconductor metal stripping, and relates to a metal stripping method for one-time exposure and one-time development of three-layer glue of a wafer with a groove.
Background
As is well known, in the semiconductor wafer processing process, metal stripping processes exist, and metal evaporation is generally performed by adopting a single-layer negative photoresist in a manner of adjusting chamfer angle through exposure and development, but the negative photoresist has the problem that residual gold wires and metal scraps are difficult to remove cleanly when stripped by adopting a sputtering manner. The existing method is to use double-layer photoresist to match with one-time exposure, the bottom layer of non-photosensitive photoresist (light-transmitting) and the upper layer of photosensitive photoresist to perform exposure and development, and adjust the size of the chamfer by adjusting the development time so as to match the angle of metal sputtering. Double-layer photoresist stripping is much easier than single-layer negative photoresist stripping, but the dissolution rate of the non-photosensitive photoresist at the bottom layer of the double-layer photoresist in a developing solution is the same after the exposure to light and the exposure to light, and because the non-photosensitive photoresist and the photosensitive photoresist in the groove are completely clean to be coordinated when the bottom is spin-coated, the problem that the upper photosensitive photoresist collapses due to the fact that the platform chamfer outside the groove exceeds the process range when the wafer groove with the groove is clean can occur, and residual metal wires exist after stripping, so that the electrical characteristics and the appearance are poor can occur.
Disclosure of Invention
The invention aims to provide a metal stripping method for one-time exposure and one-time development of three-layer photoresist of a wafer with a groove, which solves the problem that when photoresist in a developing groove is clean in the prior art, the chamfer angle of a platform outside the groove exceeds a process range to cause collapse of the photoresist at the upper layer, and further has the result that after stripping, a pattern boundary has wire residues to cause poor electrical characteristics and appearance.
The technical scheme adopted by the invention is as follows: the metal stripping method for the one-time exposure and one-time development of the three-layer adhesive of the wafer with the groove comprises the following steps:
step 1, selecting a wafer with uneven etching grooves;
step 2, spin coating or spraying a first layer of photosensitive photoresist on the surface of the wafer, wherein the first layer of photosensitive photoresist is coated or sprayed in the groove;
step 3, spin coating or spraying non-photosensitive photoresist on the first layer of cured photosensitive photoresist, and carrying out soft baking;
step 4, spin coating or spraying a second layer of photosensitive photoresist on the cured non-photosensitive photoresist, and carrying out soft baking;
step 5, selecting a photoetching plate, and performing primary exposure and primary development on the second layer of photosensitive photoresist;
step 6, the photoetching plate is moved, metal is sputtered on the developed wafer, and a corresponding metal pattern is obtained in a pattern area of the wafer, which is developed cleanly;
and 7, adopting an organic solution ultrasonic soaking and stripping process to enable the first photosensitive photoresist adhesive layer, the non-photosensitive photoresist adhesive layer, the second photosensitive photoresist adhesive layer and the upper metal layer of the area to be stripped simultaneously.
The invention is also characterized in that:
the photosensitive photoresist is a positive photoresist or a negative photoresist, wherein the polarities of the first layer of photosensitive photoresist and the second layer of photosensitive photoresist are the same.
And (3) in the soft baking in the step (3) and the step (4), setting the temperature to be 90-200 ℃ and the time to be 30s-2min, wherein the thicknesses of the non-photosensitive photoresist and the photosensitive photoresist are 1-10 microns.
In the step 5, an exposure of 5mJ/cm2 to 100mJ/cm2 and a development are carried out by using an i-line or l-line or g-line exposure machine.
The ultrasonic soaking and stripping process of the organic solution in the step 7 comprises the following steps: ultrasonic current soaking stripping is carried out in the stripping liquid, and flushing cleaning is carried out after isopropanol soaking is finished after stripping.
The beneficial effects of the invention are as follows:
1. the bottom layer is firstly filled with the groove when the positive photoresist is coated in a spin mode, and the depth of the groove is reduced. When the non-photosensitive photoresist is spun, most of the photoresist which is shallower is easily thrown out of the groove by centrifugal force, and the thickness of the non-photosensitive photoresist in the groove is reduced. And finally, under the condition of visible light, the dissolution rate of the photoresist in the groove is accelerated.
2. After the spin coating and baking of the three layers of glue are completed, the required chamfer size can be achieved by only one exposure and one development, repeated overlay exposure is not needed, and the operation is simple and the cost is saved.
3. After photoetching development, the developing speed of the photoresist of the visible light inside and outside the groove is almost consistent, and the transverse length of the chamfer can reach 1.1 micrometers to 2.3 micrometers;
4. the large chamfer can meet the requirement that no metal is adhered at the chamfer position when metal is sputtered, the stripping requirement can be met, and the effects of easy stripping and no residual metal at the edge of the pattern are achieved.
Drawings
FIG. 1 is a topography of a wafer with grooves after soft baking by a metal stripping method for one-time exposure and one-time development of three-layer glue;
FIG. 2 is a topography of a grooved wafer after metallization by a metal stripping process for one-shot exposure one-shot development of a trilayer resist in accordance with the present invention;
FIG. 3 is a photograph of a chamfer after development of example 1 of the present invention;
FIG. 4 is a photograph of a chamfer after development of example 2 of the present invention;
FIG. 5 is a photograph of the invention after peeling in example 2.
In the figure, 1, a wafer, 2, a non-photosensitive photoresist, 3, a photosensitive photoresist, 4, a chamfer and 5, a metal layer.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The invention relates to a metal stripping method for one-time exposure and one-time development of three layers of glue of a wafer with a groove, which comprises the following steps:
step 1, selecting a wafer 1 with uneven etching grooves;
step 2, spin coating or spraying a first layer of photosensitive photoresist 3 on the surface of the wafer 1, wherein the first layer of photosensitive photoresist 3 is coated or sprayed in a groove; soft baking at 90-200deg.C for 30s-2min to obtain a paste with a thickness of 1-10 μm;
step 3, spin coating or spraying the non-photosensitive photoresist 2 on the cured photoresist; soft baking at 90-200deg.C for 30s-2min to obtain a paste with a thickness of 1-10 μm;
step 4, spin coating or spraying a second layer of photosensitive photoresist 3 on the cured non-photosensitive photoresist 2; soft baking at 90-200deg.C for 30s-2min to obtain paste with thickness of 1-10 μm as shown in figure 1;
step 5, selecting a photoetching plate, exposing the second layer of photosensitive photoresist 3 by using an i-line or l-line or g-line exposure machine for one time of 5mJ/cm < 2 > -100mJ/cm < 2 >, and developing by adopting a positive developing solution or a negative developing solution for one time;
step 6, sputtering metal, forming a metal layer 5 on the second layer of photosensitive photoresist 3, and obtaining a corresponding metal pattern in a pattern area of the wafer 1, wherein the pattern area is developed cleanly, as shown in fig. 2;
and 7, adopting an organic solution ultrasonic soaking and stripping process to enable the photoresist layer 3 and the photoresist layer 2 of the region to be stripped, and the photoresist layer 3 and the metal layer 5 of the other photoresist layer to be stripped simultaneously, wherein the specific method comprises the following steps: ultrasonic current soaking stripping is carried out in the stripping liquid, and flushing cleaning is carried out after isopropanol soaking is finished after stripping. The first photoresist layer 3 and the other photoresist layer 3 are positive photoresist or negative photoresist, and the polarities of the first photoresist layer 3 and the other photoresist layer 3 are the same.
Example 1
The method of the invention is adopted to bake glue and strip metal from the wafer 1 with the etching groove, and comprises the following specific steps:
step 1, selecting a wafer 1 with uneven etching grooves, wherein the depth-to-width ratio of grooves is 4:1, a step of;
step 2, spin-coating a first layer of i-line positive photoresist AZ-12XT in a groove on the surface of the wafer 1, and soft baking at 110 ℃ for 50s by a hot plate;
step 3, spin coating LOL2000 photoresist with 6000r on the first layer of solidified photoresist; soft baking at 150deg.C for 1min on a hot plate;
step 4, spin coating a third layer of positive photoresist on the cured LOL2000 by 3000r to form i-line photoresist AZ-12XT, and soft baking at 110 ℃ for 50s by a hot plate;
step 5, selecting a photoetching plate, exposing the photoresist of the third layer for 10mw-18s by using a double-sided exposure machine H94-16 i line exposure machine, developing for 1min by using SUN-238D developing solution, wherein the chamfer size of a platform outside a groove after development is shown in figure 3, and the transverse chamfer size is 1.19 microns;
step 6, selecting a sputtering machine JCP-550 according to the plating rate
Figure BDA0003963182250000051
Sputtering metal 100nmTi and 300nmAu, and developing a clean pattern area of the wafer 1 to obtain a corresponding metal pattern;
step 7, soaking the wafer 1 in NMP stripping liquid for 10min under ultrasonic current of 0.7 for stripping, soaking in isopropanol for 5min after stripping, and flushing and spin drying after the isopropanol soaking time is over;
example 2
The method of the invention is adopted to bake glue and strip metal from the wafer 1 with the etching groove, and comprises the following specific steps:
step 1, selecting a wafer 1 with uneven etching grooves, wherein the depth-to-width ratio of grooves is 4:1, a step of;
step 2, spin-coating a first layer of i-line positive photoresist AZ-12XT in a groove on the surface of the wafer 1, and soft baking at 110 ℃ for 50s by a hot plate;
step 3, spin coating LOL2000 photoresist with 6000r on the first layer of solidified photoresist; soft baking at 150deg.C for 1min on a hot plate;
step 4, spin coating a third layer of positive photoresist on the cured LOL2000 by 3000r to form i-line photoresist AZ-12XT, and soft baking at 110 ℃ for 50s by a hot plate;
step 5, selecting a photoetching plate, exposing the photoresist of the third layer for 10mw-18s by using a double-sided exposure machine H94-16 i line exposure machine, developing for 1min30s by using SUN-238D developing solution, wherein the chamfer size of a platform outside a groove after development is shown in figure 4, and the transverse size of a chamfer is 2.24 microns;
step 6, selecting a sputtering machine JCP-550 according to the plating rate
Figure BDA0003963182250000061
Sputtering metal 100nmTi and 300nmAu, and developing a clean pattern area of the wafer 1 to obtain a corresponding metal pattern;
step 7, soaking the wafer 1 in NMP stripping liquid for 10min under ultrasonic current of 0.7 for stripping, soaking in isopropanol for 5min after stripping, and flushing and spin drying after the isopropanol soaking time is over;
as can be seen from fig. 5, the effect of peeling by microscopic examination in example 2 shows that the metal pattern after peeling has regular edges and no effect of residual metal.
In the embodiment, a layer of positive photoresist is adopted, LOL2000 is added, and a layer of positive photoresist is added; the positive photoresist which is easy to develop after the bottom is exposed to light at one time and is developed at the same rate as the developing rate of the bottom is LOL2000 after the bottom is exposed to light, so that the groove depth of the LOL2000 is reduced by matching, and the positive photoresist which is photosensitive at the bottom is quickly dissolved only when the positive photoresist is contacted with the developing solution, so that the developing rate in the groove is accelerated, and the developing rates of the platform in the groove and the platform outside the groove are almost consistent.
In the embodiment, only one exposure and one development are adopted, repeated overlay exposure is not needed, and the operation is simple and the cost is saved. The effect that the peeling is easy and the figure edge has no residual metal can be satisfied by ultrasonic soaking of the traditional organic solution during peeling.

Claims (5)

1. The metal stripping method for the one-time exposure and one-time development of the three-layer adhesive of the wafer with the groove is characterized by comprising the following steps of:
step 1, selecting a wafer (1) with uneven etching grooves;
step 2, spin coating or spraying a first layer of photosensitive photoresist (3) on the surface of the wafer (1);
step 3, spin coating or spraying non-photosensitive photoresist (2) on the first layer of solidified photosensitive photoresist (3) and carrying out soft baking;
step 4, spin coating or spraying a second layer of photosensitive photoresist (3) on the solidified non-photosensitive photoresist (2) and carrying out soft baking;
step 5, selecting a photoetching plate, and performing primary exposure and primary development on the second layer of photosensitive photoresist (3);
step 6, the photoetching plate is moved, and metal is sputtered on the developed wafer (1), so that a corresponding metal pattern is obtained in a pattern area of the wafer (1) which is developed cleanly;
and 7, adopting an organic solution ultrasonic soaking and stripping process to enable the photoresist layer of the first layer (3), the photoresist layer of the non-photosensitive photoresist (2), the photoresist layer of the second layer (3) and the upper metal layer (5) of the region to be stripped simultaneously.
2. The metal stripping method for one-shot exposure one-shot development of a grooved wafer three-layer resist as claimed in claim 1, wherein the photosensitive resist (3) is a positive resist or a negative resist, and wherein the first layer of photosensitive resist (3) and the second layer of photosensitive resist (3) have the same polarity.
3. The method for stripping metal for one-shot development of a grooved wafer three-layer resist according to claim 1, wherein the soft baking in step 3 and step 4 is performed at a temperature of 90 ℃ to 200 ℃ for 30s to 2min, and the thicknesses of the non-photosensitive resist (2) and the photosensitive resist (3) are 1 μm to 10 μm.
4. The method for stripping metal for one-shot development of a three-layer resist for a grooved wafer according to claim 1, wherein in the step 5, an exposure of 5mJ/cm2 to 100mJ/cm2 and a development are performed by using an i-line or l-line or g-line exposure machine.
5. The metal stripping method for one-shot exposure and one-shot development of the three-layer photoresist of the grooved wafer according to claim 1, wherein the ultrasonic soaking and stripping process of the organic solution in the step 7 is specifically as follows: ultrasonic current soaking stripping is carried out in the stripping liquid, and flushing cleaning is carried out after isopropanol soaking is finished after stripping.
CN202211487546.5A 2022-11-25 2022-11-25 Metal stripping method for one-time exposure and one-time development of three-layer adhesive of wafer with groove Pending CN116206953A (en)

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