CN116203796A - Method for using KrF light source thick film photoresist composition - Google Patents
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- CN116203796A CN116203796A CN202111448787.4A CN202111448787A CN116203796A CN 116203796 A CN116203796 A CN 116203796A CN 202111448787 A CN202111448787 A CN 202111448787A CN 116203796 A CN116203796 A CN 116203796A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention discloses a method for using a KrF light source thick film photoresist composition. Specifically, the invention discloses a use method of a KrF light source thick film photoresist composition using a compound shown as a formula I as a photoacid generator, which mainly comprises the steps of coating, pre-baking, pattern replication of a mask plate, re-baking, development and the like. The obtained adhesive film has good rectangular property by using the KrF thick film photoresist composition.
Description
Technical Field
The invention relates to a method for using a KrF light source thick film photoresist composition.
Background
In the field of semiconductor manufacturing, in the manufacturing process of chips such as LCD (liquid crystal display)/BUMP BUMP/MEMS micro electro mechanical system/3D-NAND memory, a thick film photoresist of a KrF light source is used, and the photoresist is different from a conventional thin layer photoresist of KrF and a photoresist of an ArF light source, and has unique performance.
Although the manufacturing technology of integrated circuit semiconductor chips is rapidly developed at present, the technology of thick film photoresist matched with the KrF light source is not fully mature, and is the hot spot field of the research of the KrF photoresist at present.
Disclosure of Invention
The invention provides a method for using a KrF light source thick film photoresist composition, and an adhesive film obtained by using the method has good rectangular property.
The invention solves the technical problems through the following technical proposal.
The invention provides a method for using a KrF thick film photoresist composition, which comprises the following steps:
step 1: coating a KrF thick film photoresist composition on a surface of a substrate to form a photoresist layer;
step 2: pre-baking the photoresist layer;
step 3: copying the pattern on the mask plate onto the pre-baked photoresist layer through exposure;
step 4: baking the exposed photoresist layer;
step 5: applying a developer to the baked photoresist layer for developing to obtain a photoetching pattern;
the KrF thick film photoresist composition comprises a photoacid generator as shown in formula I;
in the formula I, n is 0, 1, 2 or 3;
R 1 is-COOR 1-1 Or C 1-4 An alkyl group; r is R 1-1 Is C 1-4 An alkyl group;
R 2 is C 1-4 An alkyl group.
In step 1, the substrate is preferably a silicon wafer.
In step 1, the coating method is preferably spin coating.
In step 1, the thickness of the photoresist layer is preferably 8.5 to 11.5. Mu.m, more preferably 10. Mu.m.
In step 2, the temperature of the pre-baking is preferably 95 to 125 ℃, and more preferably 110 ℃.
In step 3, the wavelength of the exposure is preferably 248nm.
In step 4, the baking temperature is preferably 110 to 130 ℃, and more preferably 120 ℃.
In step 5, the developer is preferably an aqueous solution of tetramethylammonium hydroxide, for example, an aqueous solution of tetramethylammonium hydroxide having a mass percent of 2.38%.
In step 5, the temperature of the development is preferably 20 to 25 ℃, and more preferably 23 ℃.
In step 5, the development time is preferably 0.5 to 2 minutes, more preferably 1 minute.
In a preferred embodiment, n is 0, 1 or 2.
In a preferred embodiment, R 1 is-COOR 1-1 Wherein R is 1-1 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably ethyl.
In a preferred embodiment, R 1 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably methyl.
In a preferred embodiment, R 2 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably methyl.
The photoacid generator is preferably any one of the following compounds:
the KrF thick film photoresist composition comprises the following components: the photoacid generator, the photosensitive polymer, the triethanolamine and the solvent;
the photopolymer may be a polymer that can be used for Deep Ultraviolet (DUV) light to perform photochemical reactions. For example, the photopolymer may be a polymer that chemically reacts when a photoacid generator (PAG) mixed with the photopolymer is exposed to light such as deep ultraviolet light to generate an acid, and the acid thus generated chemically reacts the polymer to increase its hydrophilicity or hydrophobicity. It should be appreciated that the photopolymer need not be directly sensitive to light (e.g., exposure of the photopolymer to light does not necessarily change the chemical composition of the photopolymer, although the chemical composition of the photopolymer may change due to the acid created by the exposed PAG that is mixed with the photopolymer). In some embodiments, the solubility of the photopolymer in the base may be increased due to photochemical reactions. In some embodiments, the photopolymer may have a structure in which a protecting group is bonded to the repeating unit, and the protecting group may be deprotected during exposure so that the photopolymer dissolves well in the base. The photoresist may be a positive photoresist in which the portions of the photoresist that are removed by subsequent photoresist development are exposed to light (e.g., DUV light). The deprotected protecting group may generate a new acid for chemical amplification.
The photopolymer may be a phenolic resin, a polyhydroxystyrene resin, an acrylic resin, or a combination thereof.
In a preferred embodiment of the present invention, the photoresist composition consists of the photoacid generator, the photopolymer, triethanolamine and a solvent.
The phenolic resin may be a resin having a repeating unit represented by formula (IV),
in the formula (IV), R 5a Is an acid dissociating protecting group, and R 5b And R is 5c Each of which is a hydrogen atom or C 1 -C 6 An alkyl group. R is R 5a Is C 1 -C 6 Straight-chain, branched or cyclic alkyl, vinyloxyethyl, tetrahydropyranyl, tetrahydrofuranyl, trialkylsilyl, isonorbornyl, 2-methyl-2-adamantyl, 2-ethyl-2-adamantyl, 3-tetrahydrofuranyl, 3-oxocyclohexyl, gamma-butyrolactone-3-yl, mevalonolactone, gamma-butyrolactone-2-yl, 3-methyl-gamma-butyrolactone-3-yl, 2-tetrahydropyranyl, 2-tetrahydrofuranyl, 2, 3-propylene carbonate-1-yl, 1-methoxyethyl, 1-ethoxyethyl, 1- (2-methoxyethoxy) ethyl, 1- (2-ethyl)Acyloxyethoxy) ethyl, tert-butoxycarbonylmethyl, methoxymethyl, ethoxymethyl, trimethoxysilyl or triethoxysilyl, and may be methoxyethyl, ethoxyethyl, n-propoxyethyl, isopropoxyethyl, n-butoxyethyl, isobutoxyethyl, tert-butoxyethyl, cyclohexyloxyethyl, methoxypropyl, ethoxypropyl, 1-methoxy-1-methyl-ethyl, 1-ethoxy-1-methylethyl, tert-butoxycarbonyl (t-BOC) or tert-butoxycarbonylmethyl. The straight or branched alkyl group may include, for example, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, or neopentyl. The cyclic alkyl group may include, for example, cyclopentyl or cyclohexyl.
The polyhydroxystyrene resin may be a resin having a repeating unit represented by the formula (V),
in the formula (V), R 7a Is a hydrogen atom or C 1-6 Alkyl, and R 7b Is a protecting group for acid dissociation. The definition of the acid dissociating protecting group is as described above.
The polyhydroxystyrene resin may include another polymerizable compound as a repeating unit. Examples of the polymerizable compound may include, but are not limited to: monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid; methacrylic acid derivatives having a carboxyl group and an ester bond such as 2-methacryloyloxyethyl succinic acid, 2-methacryloyloxyethyl maleic acid, 2-methacryloyloxyethyl phthalic acid and 2-methacryloyloxyethyl hexahydrophthalic acid; alkyl (meth) acrylates such as methyl (meth) acrylate, ethyl (meth) acrylate and butyl (meth) acrylate; hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate; aryl (meth) acrylates such as phenyl (meth) acrylate and benzyl (meth) acrylate; dicarboxylic acid diesters such as diethyl maleate and dibutyl fumarate; vinyl-containing aromatic compounds such as styrene, alpha-methylstyrene, chlorostyrene, chloromethylstyrene, vinyltoluene, hydroxystyrene, alpha-methylhydroxystyrene and alpha-ethylhydroxystyrene; vinyl-containing aliphatic compounds such as vinyl acetate; conjugated dienes such as butadiene and isoprene; polymerizable compounds containing nitrile groups such as acrylonitrile and methacrylonitrile; chlorine-containing polymerizable compounds such as vinyl chloride and vinylidene chloride; and polymerizable compounds containing an amide bond, such as acrylamide and methacrylamide.
The acrylic resin may be a resin having a repeating unit represented by formula (VI);
in the formula (VI), R 8a Is a hydrogen atom, C 1 -C 6 Straight-chain or branched alkyl, fluorine or C 1 -C 6 A linear or branched fluorinated alkyl group, and R 8b Is a protecting group for acid dissociation. The definition of the acid dissociating protecting group is as described above.
In one embodiment of the photoresist composition, the photosensitive polymer may include a (meth) acrylate-based polymer. The (meth) acrylate-based polymer may be an aliphatic (meth) acrylate-based polymer, and may include, for example, polymethyl methacrylate (PMMA), poly (t-butyl methacrylate), poly (methacrylic acid), poly (norbornyl methacrylate), a binary or ternary polymer of repeating units of the aforementioned (meth) acrylate-based polymers, or a combination thereof.
The acrylic resin may include another polymerizable compound as a repeating unit. Examples of the polymerizable compound may include, but are not limited to: acrylic esters having an ether bond such as 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, methoxytriethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, ethylcarbitol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, and tetrahydrofurfuryl (meth) acrylate; monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid; methacrylic acid derivatives having a carboxyl group and an ester bond such as 2-methacryloyloxyethyl succinic acid, 2-methacryloyloxyethyl maleic acid, 2-methacryloyloxyethyl phthalic acid and 2-methacryloyloxyethyl hexahydrophthalic acid; alkyl (meth) acrylates such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate and cyclohexyl (meth) acrylate; hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate; aryl (meth) acrylates such as phenyl (meth) acrylate and benzyl (meth) acrylate; dicarboxylic acid diesters such as diethyl maleate and dibutyl fumarate; vinyl-containing aromatic compounds such as styrene, alpha-methylstyrene, chlorostyrene, chloromethylstyrene, vinyltoluene, hydroxystyrene, alpha-methylhydroxystyrene and alpha-ethylhydroxystyrene; vinyl-containing aliphatic compounds such as vinyl acetate; conjugated dienes such as butadiene and isoprene; polymerizable compounds containing nitrile groups such as acrylonitrile and methacrylonitrile; chlorine-containing polymerizable compounds such as vinyl chloride and vinylidene chloride; and polymerizable compounds containing an amide bond, such as acrylamide and methacrylamide.
In one embodiment of the photoresist composition, the photopolymer may have the structure:
The photopolymer may be obtained by polyaddition of the polymer monomers as is conventional in the art. In one embodiment, the photosensitive polymer is obtained by carrying out addition polymerization on a monomer A, a monomer B and a monomer C,the monomer A is
The monomer B is->
The monomer C is->
The molar ratio of the monomer A to the monomer B to the monomer C is 66.5:8.5:25.
In one embodiment, the solvent for the polyaddition reaction is an ester solvent, preferably ethyl acetate.
In one embodiment, the polyaddition reaction is carried out at a temperature of 75 to 80℃and preferably 78 ℃.
In one embodiment, the polyaddition reaction is carried out for a period of from 6 to 10 hours, preferably 8 hours.
In one embodiment, after the polyaddition reaction is completed, it may be treated by the following post-treatment steps: 1) Mixing the reaction solution with an alcohol solvent to generate a precipitate, and mixing the precipitate with an ester solvent for dissolution; 2) Repeating the operation 1) for 3 times, mixing with alcohol solvent to obtain precipitate, and drying.
In the post-treatment step, the alcohol solvent is preferably methanol.
In the post-treatment step, the ester solvent is preferably ethyl acetate.
In one embodiment of the photoresist composition, the weight average molecular weight (Mw) of the photosensitive polymer may be 10,000 to 600,000; for example 20,000 to 400,000; and for example 22,000. Wherein the Mw value may be a value measured using Gel Permeation Chromatography (GPC) by setting polystyrene as a standard.
In one embodiment of the photoresist composition, the photosensitive polymer may have a polydispersity index (PDI) of 1 to 3, for example 2.1.
In one embodiment, the photopolymer is prepared as follows:
(1) About 80g of monomer A, about 9g of monomer B and about 32g of monomer C are added into a reaction kettle filled with nitrogen, then 110g of ethyl acetate is added into the reaction kettle, the reaction kettle is heated to 78 ℃ after being uniformly stirred, and then a mixed solution of ethyl acetate (25 g) and benzoyl peroxide (2.2 g) is dropwise added into the reaction kettle for 10 minutes. Reacting at 78 ℃ for 8 hours, stopping the reaction, and cooling the temperature of the reaction liquid to room temperature; (2) Methanol (1000 g) was then added to the reaction vessel to produce a precipitate. After 1h, liquid in the reaction kettle is led out, and ethyl acetate (150 g) is added into the reaction kettle until precipitation and dissolution are carried out; (3) Repeating the operation of the step (2) for 3 times, adding methanol (1000 g) into the reaction kettle to obtain a solid precipitate, and drying the solid precipitate in a vacuum drying oven to obtain the photopolymer. Wherein the molar ratio of monomer A, monomer B and monomer C is about 66.5:8.5:25. The structural formula of the finally prepared photosensitive polymer is
Wherein x is 1 :y 1 :z 1 =66.5:8.5:25; its weight average molecular weight (Mw) was 22,000; its polydispersity index (PDI) is 2.1.
In the KrF thick film photoresist composition, the solvent may be a solvent conventional in the art for such reactions, preferably an ester solvent such as propylene glycol monomethyl ether acetate.
In the KrF thick film photoresist composition, the weight part of the photosensitive polymer is 100 parts.
In the KrF thick film photoresist composition, the weight part of the photoacid generator is 5 parts, based on 100 parts of the photopolymer.
In the KrF thick film photoresist composition, the weight part of the triethanolamine is 0.1 part based on 100 parts by weight of the photopolymer.
In the KrF thick film photoresist composition, the weight part of the solvent is 800 parts based on 100 parts by weight of the photopolymer.
In a preferred embodiment of the present invention, the KrF thick film photoresist composition is prepared by dissolving 5 parts by weight of the photoacid generator, 100 parts by weight of the photopolymer, and 0.1 part by weight of triethanolamine to 800 parts by weight of propylene glycol monomethyl ether acetate; wherein the photosensitive polymer is obtained by carrying out addition polymerization on the monomer A, the monomer B and the monomer C; the molar ratio of the monomer A to the monomer B to the monomer C is 66.5:8.5:25, and the weight average molecular weight (Mw) of the finally prepared photopolymer is 22,000; its polydispersity index (PDI) is 2.1.
The preparation method of the KrF thick film photoresist composition can comprise the following steps: and uniformly mixing the photoacid generator, the photosensitive polymer, the triethanolamine and the solvent.
The mixing is a procedure conventional in the art. Wherein the temperature of the mixing is room temperature.
After the mixing is finished, the operation of filtering can be further included. The filtration mode is a conventional filtration mode in the field, preferably a filter is adopted for filtration, and the pore diameter of a filter membrane of the filter is preferably 150 nm-250 nm, and more preferably 200nm.
The KrF thick film photoresist composition of the present invention is a KrF light source thick film photoresist composition.
The above preferred conditions can be arbitrarily combined on the basis of not deviating from the common knowledge in the art, and thus, each preferred embodiment of the present invention can be obtained.
The reagents and materials used in the present invention are commercially available.
The invention has the positive progress effects that: the photoresist film obtained by the method has good rectangle.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
1. Photoacid generator functional test
The acetonitrile solution of the photoacid generator was prepared to have a concentration of 0.05mol/L, placed in a quartz optical cell having an optical path length of 1cm, irradiated with light (290 nm) split by a xenon lamp, and subjected to radiation measurement of acid production. The acid yield was observed by absorption of tetrabromophenol blue at 610 nm. The quantum yield was determined by measuring the amount of light using potassium ferrite oxalate.
2. Photoacid generator solubility test
1.0g of photoacid generator was weighed, added to 100g of propylene glycol methyl ether acetate, magnetically stirred for 20 minutes, and the solubility was observed.
3. Preparation of photoresist composition
5 parts by weight of a photoacid generator, 100 parts by weight of a photopolymer, and 0.1 part by weight of triethanolamine were dissolved to 800 parts by weight of propylene glycol monomethyl ether acetate, and uniformly mixed to prepare a photoresist composition.
The preparation method of the photosensitive polymer comprises the following steps:
(1) About 80g of monomer A, about 9g of monomer B and about 32g of monomer C are added into a reaction kettle filled with nitrogen, then 110g of ethyl acetate is added into the reaction kettle, the reaction kettle is heated to 78 ℃ after being uniformly stirred, and then a mixed solution of ethyl acetate (25 g) and benzoyl peroxide (2.2 g) is dropwise added into the reaction kettle for 10 minutes. Reacting at 78 ℃ for 8 hours, stopping the reaction, and cooling the temperature of the reaction liquid to room temperature; (2) Methanol (1000 g) was then added to the reaction vessel to produce a precipitate. After 1h, liquid in the reaction kettle is led out, and ethyl acetate (150 g) is added into the reaction kettle until precipitation and dissolution are carried out; (3) Repeating the operation of the step (2) for 3 times, adding methanol (1000 g) into the reaction kettle to obtain a solid precipitate, and drying the solid precipitate in a vacuum drying oven to obtain the photopolymer. Wherein the molar ratio of monomer A, monomer B and monomer C is about 66.5:8.5:25. The structural formula of the finally prepared photosensitive polymer is
Wherein x is 1 :y 1 :z 1 =66.5:8.5:25; its weight average molecular weight (Mw) was 22,000; its polydispersity index (PDI) is 2.1.
Monomer A:
monomer B:>
monomer C:>
4. use of photoresist composition
The photoresist composition was filtered using a 0.2 μm membrane filter to prepare a photoresist solution. Next, a thick film photoresist having a thickness of 10 μm was prepared by spin-coating a photoresist solution on a silicon wafer. After prebaking at 110 ℃, exposure was performed through a photomask 248nm ultraviolet, and then post-exposure baking was performed at 120 ℃. Then, development was performed at 23℃for 1 minute using a 2.38 wt% aqueous tetramethylammonium hydroxide solution. The resin compatibility and pattern shape were observed.
5. Photoacid generators examples 1 to 5 and comparative examples 1 to 10 are shown in the following table
Wherein the structure of C1-C10 is as follows:
6. photoacid generator and corresponding photoresist composition effect examples
Claims (10)
1. A method of using a KrF thick film photoresist composition comprising the steps of:
step 1: coating a KrF thick film photoresist composition on a surface of a substrate to form a photoresist layer;
step 2: pre-baking the photoresist layer;
step 3: copying the pattern on the mask plate onto the pre-baked photoresist layer through exposure;
step 4: baking the exposed photoresist layer;
step 5: applying a developer to the baked photoresist layer for developing to obtain a photoetching pattern;
the photoresist composition comprises a photoacid generator shown in a formula I;
in the formula I, n is 0, 1, 2 or 3;
R 1 is-COOR 1-1 Or C 1-4 An alkyl group; r is R 1-1 Is C 1-4 An alkyl group;
R 2 is C 1-4 An alkyl group.
2. A method of using a KrF thick film photoresist composition according to claim 1, which meets one or more of the following conditions:
(1) In the step 1, the substrate is a silicon wafer;
(2) In the step 1, the coating mode is spin coating;
(3) In the step 1, the thickness of the photoresist layer is 8.5-11.5 μm, preferably 10 μm;
(4) In the step 2, the temperature of the pre-baking is 95-125 ℃, preferably 110 ℃;
(5) In the step 3, the wavelength of the exposure is 248nm;
(6) In the step 4, the baking temperature is 110-130 ℃, preferably 120 ℃;
(7) In step 5, the developer is an aqueous solution of tetramethylammonium hydroxide, for example, an aqueous solution of tetramethylammonium hydroxide with a mass percentage of 2.38%;
(8) In the step 5, the temperature of the development is 20-25 ℃, preferably 23 ℃;
(9) In the step 5, the development time is 0.5-2 min, preferably 1min;
(10) In the photoacid generator, n is 0, 1 or 2;
(11) In the photoacid generator, when R 1 is-COOR 1-1 When said R is 1-1 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably ethyl;
(12) In the photoacid generator, when R 1 Is C 1-4 In the case of alkyl radicals, R 1 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably methyl;
(13) In the photoacid generator, R 2 Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, preferably methyl.
3. The method of using a KrF thick film photoresist composition of claim 2, wherein said photoacid generator is any one of the following compounds:
4. the method of using the KrF thick film photoresist composition of claim 1, wherein said KrF thick film photoresist composition comprises the following components: a photoacid generator as claimed in any one of claims 1 to 3, a photopolymer, triethanolamine and a solvent; the photosensitive polymer is phenolic resin, polyhydroxystyrene resin, acrylic resin or a combination thereof.
5. The method of using a KrF thick film photoresist composition of claim 4, wherein said KrF thick film photoresist composition consists of said photoacid generator, said photopolymer, triethanolamine and a solvent.
6. The method of using the KrF thick film photoresist composition of claim 4 or 5, wherein said KrF thick film photoresist composition meets one or more of the following conditions:
(1) The photosensitive polymer is obtained by carrying out addition polymerization on a monomer A, a monomer B and a monomer C, wherein the monomer A is
The monomer B is->
The monomer C is->
The molar ratio of the monomer A to the monomer B to the monomer C is 66.5:8.5:25;
(2) The weight average molecular weight of the photopolymer is 10,000 to 600,000; for example 20,000 to 400,000; also for example 22,000;
(3) The polydispersity of the photopolymer is from 1 to 3, for example 2.1;
(4) The solvent is an ester solvent, such as propylene glycol monomethyl ether acetate;
(5) The weight part of the photosensitive polymer is 100 parts;
(6) The weight part of the photoacid generator is 5 parts, and the photoacid generator is calculated by 100 parts of photopolymer;
(7) The weight part of the triethanolamine is 0.1 part, and the weight part of the triethanolamine is 100 parts of the photopolymer;
(8) The weight portion of the solvent is 800 parts based on 100 parts by weight of the photopolymer.
7. The method of using the KrF thick film photoresist composition of claim 6, wherein said KrF thick film photoresist composition is prepared by dissolving 5 parts by weight of said photoacid generator, 100 parts by weight of said photopolymer, 0.1 part by weight of triethanolamine to 800 parts by weight of propylene glycol monomethyl ether acetate; wherein the photosensitive polymer is obtained by carrying out addition polymerization on the monomer A, the monomer B and the monomer C; the molar ratio of the monomer A to the monomer B to the monomer C is 66.5:8.5:25, and the weight average molecular weight of the finally prepared photosensitive polymer is 22,000; the polydispersity index thereof is 2.1.
8. The method of using a KrF thick film photoresist composition of claim 7, which meets one or more of the following conditions:
(1) The solvent for the polyaddition reaction is an ester solvent, preferably ethyl acetate;
(2) The temperature of the polyaddition reaction is 75-80 ℃, preferably 78 ℃;
(3) The polyaddition reaction time is 6 to 10 hours, preferably 8 hours;
(4) After the polyaddition reaction is finished, the polyaddition reaction can be treated by the following post-treatment steps: 1) Mixing the reaction solution with an alcohol solvent to generate a precipitate, and mixing the precipitate with an ester solvent for dissolution; 2) Repeating the operation 1) for 3 times, mixing with alcohol solvent to obtain precipitate, and drying; the alcohol solvent is preferably methanol; the ester solvent is preferably ethyl acetate.
9. The method of using the KrF thick film photoresist composition of any one of claims 4-8, wherein said method of preparing the KrF thick film photoresist composition comprises the steps of: and uniformly mixing the photoacid generator, the photosensitive polymer, the triethanolamine and the solvent.
10. The method of using a KrF thick film photoresist composition of claim 9, wherein after said mixing is completed, filtering; the filtering is filtering by adopting a filter; the filter membrane pore size of the filter is 150-250 nm, preferably 200nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111448787.4A CN116203796A (en) | 2021-11-30 | 2021-11-30 | Method for using KrF light source thick film photoresist composition |
| PCT/CN2021/141097 WO2023097826A1 (en) | 2021-11-30 | 2021-12-24 | Krf light source thick film photoresist composition, preparation method therefor and use method thereof |
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| CN202111448787.4A CN116203796A (en) | 2021-11-30 | 2021-11-30 | Method for using KrF light source thick film photoresist composition |
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| CN116203796A true CN116203796A (en) | 2023-06-02 |
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