CN116200746A - Mask strip manufacturing method - Google Patents
Mask strip manufacturing method Download PDFInfo
- Publication number
- CN116200746A CN116200746A CN202310095217.4A CN202310095217A CN116200746A CN 116200746 A CN116200746 A CN 116200746A CN 202310095217 A CN202310095217 A CN 202310095217A CN 116200746 A CN116200746 A CN 116200746A
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- Prior art keywords
- etching
- area
- mask strip
- mask
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 107
- 238000007747 plating Methods 0.000 claims abstract description 33
- 239000000872 buffer Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004680 force modulation microscopy Methods 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Abstract
The invention discloses a manufacturing method of a mask strip, and relates to the technical field of special-shaped display OLED. The method comprises the following steps: step 1, manufacturing rectangular non-through hole etching areas on two sides of a mask strip by adopting an etching process; step 2, etching the rectangular non-through hole etching area corresponding to the effective film plating area again to form a through hole and penetrate through the through hole to the designed opening size, and thinning the thickness of a mask strip of the effective film plating area; the effective coating area is used for evaporating materials to pass through and deposit on the TFT substrate circuit to form an effective display area; the remaining rectangular non-via etched areas are then etch buffers. The mask strip manufactured by the method disclosed by the invention is thinned while the etching buffer area with rectangular periphery is formed at the outer side of the effective coating area, so that the phenomenon of uneven stress of the mask strip during screen tensioning can be reduced, the poor color mixing caused by the wrinkling phenomenon of the mask strip is improved, and meanwhile, the bonding condition of the mask strip and the glass substrate is improved, so that the product yield is improved.
Description
Technical Field
The invention relates to the technical field of special-shaped display OLED (organic light emitting diode), in particular to a manufacturing method of a mask strip.
Background
The AMOLED display panel can be suitable for special-shaped display of wearable watches such as wrist rings. The AMOLED adopts an evaporation process, the materials of all functional layers are heated and evaporated and then pass through the metal mask strip pixel openings, and are deposited on a TFT substrate circuit to realize light emission, and particularly, the materials of a light emitting layer need to be high-definition mask (FMM) so as to ensure that the materials are accurately evaporated to a specific area on a substrate. A conventional masking strip 100 in the prior art is provided with a rectangular effective film forming region 10, and a screen drawing is shown in fig. 1, and the arrow indicates the pulling force.
The display circuit area of the TFT substrate of the special-shaped display OLED is designed to be special-shaped (circular or other non-rectangular shapes), and the matched effective film forming area 10 of the FMM is also designed to be special-shaped. The mask strip is stretched by the tension applied to the two ends in the net stretching process, the mask strip etching open area is rectangular, the tension is better in distribution uniformity along the cross section of the mask strip, but if the open area is round and the like, the tension is poor in distribution uniformity along the cross section of the mask strip, deformation of the positions of different etching areas of the mask strip is easy to cause, and then the problems of position deviation of etching open holes, wrinkling of the mask strip and the like are caused, as shown in fig. 2. Therefore, after the FMM is attached to the TFT substrate and coated with the film, defects such as shadow and color mixing are likely to occur, and the product yield is directly affected, which is one of the difficulties in developing the prior special-shaped display screen.
Disclosure of Invention
The invention aims to solve the technical problem of providing a manufacturing method of a mask strip, which is characterized in that an etching buffer zone with rectangular periphery is formed outside an effective film plating zone, the thickness of the mask strip in the effective film plating zone is reduced, the problem of uneven tension when the mask strip for a special-shaped screen is stretched is solved, and meanwhile, the bonding condition of the mask strip and a glass substrate is improved, so that the product yield is improved.
In order to solve the technical problems, the embodiment of the invention provides a manufacturing method of a mask strip, wherein the mask strip comprises film forming areas which are arranged in one-to-one correspondence with a special-shaped display screen, each film forming area comprises an effective film plating area and an etching buffer area, the etching buffer area is positioned at the periphery of the effective film plating area, and the periphery of the etching buffer area is rectangular; the etching holes of the etching buffer area are non-through holes, the effective coating area is arranged corresponding to the effective display area of the special-shaped display screen, and the etching holes are through holes; the thickness of the mask strip of the effective film plating area is smaller than that of the mask strip of the etching buffer area; the method comprises the following steps:
Further, the step 1 specifically includes:
etching after developing a first mask by using a first mask, wherein an etching area is rectangular, and the first etching surface is a contact surface of the mask and the TFT substrate;
the second etching surface of the mask strip is developed by a second photomask, the etching area is rectangular, the second etching surface is a deposition surface of evaporation materials, and a rectangular non-through hole etching area is manufactured through double-side etching.
Further, the rectangular etching areas of the first photomask and the second photomask are symmetrically arranged and have the same area.
Further, the bottom spacing of the etching holes of the rectangular etching area formed by the two-sided etching is not less than 2um.
Further, the opening size in the first mask etching region is smaller than the opening size in the second mask etching region.
Further, in the step 2, the rectangular non-through hole etching area corresponding to the effective plating area is etched again to form a through hole and penetrate to the designed opening size, which specifically includes:
the second etching surface of the mask strip is developed by a third photomask, an opening area of the third photomask corresponds to the effective coating area, a through hole is formed by etching and penetrates through the through hole to a designed opening size corresponding to the effective display area of the display screen, and the thickness of the mask strip of the effective coating area is integrally thinned.
Further, the thickness of the mask strip is in the range of 20-100um.
The technical scheme of the embodiment of the invention has at least the following advantages:
1. the etching buffer area with rectangular periphery is formed outside the effective film plating area, and the etching buffer area is a non-through hole etching area, so that uneven stress of mask strips during screen tensioning is reduced, poor color mixing caused by wrinkling of the mask strips is improved, and the Zhang Wangliang rate of the mask strips for the special-shaped display screen is improved;
2. through carrying out the attenuate to effective coating area, can reduce mask strip sagging volume to a certain extent, improve mask strip and glass substrate laminating condition, thereby improve the coating shadow effect and improve the product yield.
Drawings
The invention will be further described with reference to examples of embodiments with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a prior art rectangular etching area mask stripe net;
FIG. 2 is a diagram showing the uneven tension of a mask strip in a special-shaped etching area in the prior art;
FIG. 3 is a schematic diagram of a mask strip etching process in the prior art;
FIG. 4 is a top view of a mask strip according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a film forming region of a mask strip according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view illustrating a process of forming a hole in a film formation area according to an embodiment of the present invention;
FIG. 7a is a top view of a rectangular etching area of a first etching surface of a mask strip according to an embodiment of the present invention;
FIG. 7b is a top view of a rectangular etching area of a second etching surface of a mask strip according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of the etching process of the first etched surface and the second etched surface according to the embodiment of the invention;
FIG. 9 is a schematic top view illustrating a process of forming a hole in a second etched surface according to an embodiment of the present invention;
fig. 10 is a schematic cross-sectional view illustrating a process of forming a hole in a second etched surface according to an embodiment of the present invention.
Detailed Description
According to the manufacturing method of the mask strip, the etching buffer area with the rectangular periphery is formed on the outer side of the effective film plating area, the thickness of the mask strip in the effective film plating area is reduced, the problem of uneven tension when the mask strip for the special-shaped screen is stretched is solved, meanwhile, the bonding condition of the mask strip and the glass substrate is improved, and therefore the product yield is improved.
The embodiment of the invention provides a method for manufacturing a mask strip, which is used for manufacturing a mask strip 100 shown in fig. 4 to 6, wherein the mask strip 100 comprises film forming areas 10 which are arranged in one-to-one correspondence with a special-shaped display screen, each film forming area 10 comprises an effective film plating area 1 and an etching buffer area 2, the etching buffer area 2 is positioned at the periphery of the effective film plating area 1, and the periphery of the etching buffer area 2 is rectangular; the etching holes of the etching buffer zone 2 are non-through holes, the effective coating zone 1 is arranged corresponding to the effective display zone of the special-shaped display screen, and the etching holes are through holes; the thickness of the mask strip of the effective film plating area 1 is smaller than that of the mask strip of the etching buffer area 2; the method comprises the following steps:
By arranging the etching buffer zone 2 with rectangular periphery at the periphery of the effective film plating zone 1 (the effective film plating zone 1 and the etching buffer zone 2 are overlapped to form a complete rectangular area), and the etching buffer zone 2 is a non-through hole etching zone, the phenomenon of uneven stress of the mask strips 100 during screen tensioning is reduced, the poor color mixing caused by the wrinkling phenomenon of the mask strips 100 is improved, and therefore the rate of the mask strips Zhang Wangliang for the special-shaped display screen is improved. By thinning the effective coating area 1, the sagging amount of the mask strips 100 can be reduced to a certain extent, the bonding condition of the mask strips 100 and the glass substrate is improved, the coating shadow effect is improved, and the product yield is improved.
In one possible implementation manner, the step 1 may specifically include:
the first etched surface 101 of the mask strip 100 is etched after being developed by adopting a first photomask 201, and the etched area is rectangular, and the first etched surface is the contact surface of the mask strip and the TFT substrate;
the second etched surface 102 of the mask strip 100 is developed by using a second photomask 201, the etched area is rectangular, the second etched surface is a deposition surface of evaporation material, and a rectangular non-through hole etched area is manufactured by etching on both sides.
The etching areas of the first mask 201 and the second mask 202 are rectangular, and the two rectangular areas are symmetrically arranged and have the same area (as shown in fig. 7a and 7 b). The etching buffer area 2 is a rectangular non-through hole etching area etched from two sides of the mask strip 100. And the bottom spacing of the etching holes of the rectangular etching area formed by the two-sided etching is not less than 2um. The opening size in the etched region of the first mask 201 is smaller than the opening size in the etched region of the second mask 202 (as shown in fig. 8). Each rectangular region includes a plurality of non-through etched holes therein.
In one possible implementation manner, in the step 2, the rectangular non-through hole etching area corresponding to the effective film plating area is etched again to form a through hole and penetrate to the designed opening size, which specifically includes:
the second etched surface 102 of the mask strip 100 is developed by using a third photomask 203, the open area of the third photomask 203 is corresponding to the effective film plating area 1, the through hole is etched to form and penetrate through to the designed open hole size corresponding to the effective display area of the display screen, and the thickness of the mask strip of the effective film plating area 1 is entirely thinned, as shown in fig. 9 and 10.
In one possible implementation, the thickness of the mask strip 100 ranges from 20 um to 100um, and the material is INVAR 36.
The masking strips of prior art FMMs are currently fabricated with a double sided etching process to create pixel openings, as shown in fig. 3, including coating (photoresist), developing, etching and cleaning steps. The mask strip 100 manufacturing process of the embodiment of the invention comprises the following steps:
the first etched surface 101 and the second etched surface 102 are coated with photoresist;
developing the first etched surface 201 and the second etched surface 202 with a first mask 201 and a second mask 202, respectively;
first etched surface 201 and second etched surface 202 are etched for the first time;
cleaning;
the second etched surface 202 is coated with photoresist;
developing the second etched surface 202 with a third mask 203;
a second etch of the second etched surface 202;
and (5) cleaning.
Compared with the mask strip etching manufacturing flow in the prior art, the mask strip manufacturing method of the embodiment of the invention only adds one etching on the second etched surface 102, and simultaneously realizes the formation of the through hole of the effective film plating area 1 and the integral thinning of the thickness of the mask strip through the third photomask 203, so that the uneven stress of the mask strip 100 during the screen tensioning can be reduced, the sagging amount of the mask strip 100 can be reduced, the bonding condition of the mask strip 100 and the glass substrate can be improved, and the film plating shadow effect can be improved, thereby improving the product yield.
According to the invention, the etching buffer area with rectangular periphery is formed outside the effective film plating area, and the etching buffer area is a non-through hole etching area, so that the phenomenon of uneven stress of mask strips during screen tensioning is reduced, poor color mixing caused by the wrinkling phenomenon of the mask strips is improved, and the Zhang Wangliang rate of the mask strips for the special-shaped display screen is improved; through carrying out the attenuate design to effective coating area, can reduce mask strip sagging volume to a certain extent, improve mask strip and glass substrate laminating condition, thereby improve the coating shadow effect and improve the product yield.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that the specific embodiments described are illustrative only and not intended to limit the scope of the invention, and that equivalent modifications and variations of the invention in light of the spirit of the invention will be covered by the claims of the present invention.
Claims (7)
1. The manufacturing method of the mask strip is characterized in that the mask strip comprises film forming areas which are arranged in one-to-one correspondence with the special-shaped display screen, each film forming area comprises an effective film plating area and an etching buffer area, the etching buffer area is positioned at the periphery of the effective film plating area, and the periphery of the etching buffer area is rectangular; the etching holes of the etching buffer area are non-through holes, the effective coating area is arranged corresponding to the effective display area of the special-shaped display screen, and the etching holes are through holes; the thickness of the mask strip of the effective film plating area is smaller than that of the mask strip of the etching buffer area; the method comprises the following steps:
step 1, manufacturing rectangular non-through hole etching areas on two sides of a mask strip by adopting an etching process;
step 2, etching the rectangular non-through hole etching area corresponding to the effective film plating area again to form a through hole and penetrate through the through hole to the designed opening size, and thinning the thickness of a mask strip of the effective film plating area; the effective coating area is used for evaporating materials to pass through and deposit on the TFT substrate circuit to form an effective display area; the remaining rectangular non-via etched areas are then etch buffers.
2. The method for manufacturing the mask strip according to claim 1, wherein: the step 1 specifically includes:
etching after developing a first mask by using a first mask, wherein an etching area is rectangular, and the first etching surface is a contact surface of the mask and the TFT substrate;
the second etching surface of the mask strip is developed by a second photomask, the etching area is rectangular, the second etching surface is a deposition surface of evaporation materials, and a rectangular non-through hole etching area is manufactured through double-side etching.
3. The method for manufacturing the mask strip according to claim 2, wherein: the rectangular etching areas of the first photomask and the second photomask are symmetrically arranged and have the same area.
4. A mask strip according to claim 3, wherein: the bottom spacing of etching holes of the rectangular etching area formed by etching the two sides is not less than 2um.
5. The method for manufacturing the mask strip according to claim 2, wherein: the opening size in the first mask etching region is smaller than the opening size in the second mask etching region.
6. The method for manufacturing the mask strip according to claim 2, wherein: in the step 2, the rectangular non-through hole etching area corresponding to the effective film plating area is etched again to form a through hole and penetrate through the through hole to the designed opening size, specifically including:
the second etching surface of the mask strip is developed by a third photomask, an opening area of the third photomask corresponds to the effective coating area, a through hole is formed by etching and penetrates through the through hole to a designed opening size corresponding to the effective display area of the display screen, and the thickness of the mask strip of the effective coating area is integrally thinned.
7. The method for manufacturing the mask strip according to claim 1, wherein: the thickness of the mask strip is 20-100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310095217.4A CN116200746A (en) | 2023-02-07 | 2023-02-07 | Mask strip manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310095217.4A CN116200746A (en) | 2023-02-07 | 2023-02-07 | Mask strip manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116200746A true CN116200746A (en) | 2023-06-02 |
Family
ID=86514137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310095217.4A Pending CN116200746A (en) | 2023-02-07 | 2023-02-07 | Mask strip manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116200746A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109423600A (en) * | 2017-08-25 | 2019-03-05 | 京东方科技集团股份有限公司 | Mask strip and preparation method thereof, mask plate |
| KR101989531B1 (en) * | 2018-07-10 | 2019-06-14 | 주식회사 티지오테크 | Producing method of mask |
| CN113862612A (en) * | 2021-10-29 | 2021-12-31 | 福建华佳彩有限公司 | Mask strip structure for special-shaped screen and manufacturing process thereof |
| CN114150265A (en) * | 2021-12-30 | 2022-03-08 | 福建华佳彩有限公司 | Mask strip structure for special-shaped screen and manufacturing method thereof |
-
2023
- 2023-02-07 CN CN202310095217.4A patent/CN116200746A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109423600A (en) * | 2017-08-25 | 2019-03-05 | 京东方科技集团股份有限公司 | Mask strip and preparation method thereof, mask plate |
| KR101989531B1 (en) * | 2018-07-10 | 2019-06-14 | 주식회사 티지오테크 | Producing method of mask |
| CN113862612A (en) * | 2021-10-29 | 2021-12-31 | 福建华佳彩有限公司 | Mask strip structure for special-shaped screen and manufacturing process thereof |
| CN114150265A (en) * | 2021-12-30 | 2022-03-08 | 福建华佳彩有限公司 | Mask strip structure for special-shaped screen and manufacturing method thereof |
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