CN110350009B - Array substrate, preparation method thereof and display panel - Google Patents
Array substrate, preparation method thereof and display panel Download PDFInfo
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- CN110350009B CN110350009B CN201910597304.3A CN201910597304A CN110350009B CN 110350009 B CN110350009 B CN 110350009B CN 201910597304 A CN201910597304 A CN 201910597304A CN 110350009 B CN110350009 B CN 110350009B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to an array substrate, a preparation method thereof and a display panel, comprising a pixel defining layer, wherein the pixel defining layer is arranged on a substrate and comprises a plurality of separating bodies which are arranged at intervals, and an opening area is formed between every two adjacent separating bodies; the opening region comprises an electrode region and transition regions positioned on two sides of the electrode region, and transition layers formed by extending from the bottom of the separating body to the periphery are arranged on the transition regions; the electrode layer is positioned in the electrode area and arranged on the substrate; the light-emitting functional layer is arranged in the opening area, so that the thickness of the light-emitting functional layer above the electrode layer is uniform in the process of forming a film by using a solution, the attenuation degree of the light-emitting functional layer is uniform, the light-emitting service life of the light-emitting functional layer is prolonged, and the light-emitting effect of the organic light-emitting device is improved.
Description
[ technical field ] A method for producing a semiconductor device
The present disclosure relates to a liquid crystal display panel industry, and more particularly, to an array substrate, a method for manufacturing the same, and a display panel.
[ background of the invention ]
Organic Light-Emitting devices (OLEDs) are considered as a new application technology of next-generation flat panel displays due to their advantages of good self-Light-Emitting characteristics, high contrast, fast response, flexible display, etc.
In the method for manufacturing the organic functional thin film layer of the OLED device, a solution film forming method is one of the widely used methods, wherein the solution film forming method is to coat the solution on a substrate firstly, then use a vacuum drying oven for drying, and remove the solvent of the solution in the drying process, so that the solute is separated out on the substrate and a thin film is formed. However, since the surface of the pixel defining layer on the substrate has a layer of hydrophobic substance, such as fluoride, after the substrate is soaked in the solution, the thin film deposited on the substrate takes the shape of a concave liquid surface or a convex liquid surface, so that the film thickness after vacuum drying is not uniform, thereby affecting the use effect of the organic light-emitting device.
In summary, during the solution film forming process of the organic light emitting device, the film thickness after film forming is not uniform, which affects the light emitting effect of the organic light emitting device.
[ summary of the invention ]
The application aims to provide an array substrate, a preparation method thereof and a display device, which can enable a light-emitting function layer to be provided with a thin film with uniform and flat thickness above an electrode area in a solution film forming process of an organic light-emitting device.
In order to solve the above problem, an embodiment of the present application provides an array substrate, including:
a substrate;
a pixel defining layer disposed on the substrate and including a plurality of spacers disposed at intervals, an opening region being formed between two adjacent spacers; the opening region comprises an electrode region and transition regions positioned on two sides of the electrode region;
a transition layer located in the transition region and formed extending from the bottom toward the periphery of the separator;
the electrode layer is arranged on the substrate and is positioned in the electrode area;
and the light-emitting functional layer is arranged in the opening area and is positioned on the transition layer and the electrode layer.
Further, the thickness of the transition layer is not greater than the thickness of the electrode layer.
Further, the thickness of the transition layer decreases in a direction extending from the bottom of the separator toward the periphery.
Further, the separation distance between the bottom portion of the separator and the electrode layer is between 2-10 microns.
Further, the material of the electrode layer comprises metal oxide, metal simple substance and/or graphene.
Further, the electrode layer is prepared into the electrode region by vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition.
Further, the light-emitting function layer comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer which are sequentially stacked.
The embodiment of the application also provides a preparation method of the array substrate, which comprises the following steps:
providing a substrate;
forming a pixel defining layer and a transition layer on the substrate, wherein the pixel defining layer is arranged on the substrate and comprises a plurality of spacers arranged at intervals, and an opening area is formed between every two adjacent spacers; the opening region comprises an electrode region and transition regions positioned on two sides of the electrode region; the transition layer is positioned in the transition area and formed by extending from the bottom of the separator to the periphery;
forming an electrode layer on the substrate, wherein the electrode layer is positioned in the electrode area;
and forming a light-emitting functional layer in the opening region, wherein the light-emitting functional layer is positioned on the transition layer and the electrode layer.
Further, the step of forming the pixel defining layer and the transition layer on the substrate specifically includes:
coating a layer of photoresist material on the substrate;
providing a mask covered with a light-shielding sheet, wherein a first opening is formed in the light-shielding sheet, a second opening is formed in the mask, the first opening and the second opening are overlapped, and the aperture of the first opening is smaller than that of the second opening;
and coating a layer of photoetching liquid on the photoresist material, placing the mask plate on the photoresist material, and etching to obtain a pixel defining layer and a transition layer, wherein the non-overlapping region of the first opening and the second opening corresponds to the transition region of the opening region, and the overlapping region of the first opening and the second opening corresponds to the electrode region of the opening region.
An embodiment of the present application further provides a display panel, including: the array substrate of any one of the above.
The array substrate, the preparation method thereof and the display panel comprise a pixel defining layer, wherein the pixel defining layer is arranged on the substrate and comprises a plurality of separating bodies which are arranged at intervals, and an opening area is formed between every two adjacent separating bodies; the opening region comprises an electrode region and transition regions positioned on two sides of the electrode region, and transition layers formed by extending from the bottom of the separating body to the periphery are arranged on the transition regions; the electrode layer is positioned in the electrode area and arranged on the substrate; the light-emitting functional layer is arranged in the opening area, so that the thickness of the light-emitting functional layer above the electrode layer is uniform in the process of forming a film by using a solution, the attenuation degree of the light-emitting functional layer is uniform, the light-emitting service life of the light-emitting functional layer is prolonged, and the light-emitting effect of the organic light-emitting device is improved.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
Fig. 2 is another schematic structural diagram of an array substrate according to an embodiment of the invention.
Fig. 3 is a schematic flow chart of a method for manufacturing an array substrate according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure. The whole-column substrate comprises a substrate 1 and a pixel defining layer arranged on the substrate 1, wherein the pixel defining layer comprises partition bodies 2 arranged at intervals, an opening area C is formed between every two adjacent partition bodies 2, the opening area C comprises an electrode area B and transition areas A located on two sides of the electrode area B, the pixel defining layer further comprises a transition layer 4 located in the transition areas A, the transition layer 4 is formed by extending the lower portions of the partition bodies 2 towards the periphery and is located on an electrode layer 5 in the electrode area B, the electrode layer 5 is arranged on the substrate 1 and is located on a light-emitting function layer 3 in the opening area C, and the light-emitting function layer 3 is located on the transition layer 4 and the electrode layer 5.
Specifically, the substrate 1 may be a glass substrate, the pixel defining layer is obtained by etching a photoresist material with laser, the width of the bottom of the separator 2 of the pixel defining layer is greater than the width of the top, the transition layer 4 and the separator 2 are made of the same material and are integrally formed, the electrode layer 5 is in contact with the transition layer 4, wherein the part of the light-emitting functional layer 3 above the electrode layer 5 is an effective light-emitting area, the transition layer 4 plays a role in reducing the tension formed by the solution when in contact with the separator 2 in the process of forming a film on the light-emitting functional layer 3 with a solution, and reduces the phenomenon that the film thickness of the solution after forming the film is not uniform due to the tension, so that the tension formed by the contact surface is reduced by the transition layer 4 in the process of forming the solution with the light-emitting functional layer 3, the solution is uniformly spread, and after forming the solution, the film thickness is uniform. When the effective light emitting area of the light emitting functional layer 3 is located above the electrode layer 5, the film thickness of the light emitting functional layer 3 can be kept uniform in the solution film forming process, and the light emitting effect of the light emitting device can be improved.
In this embodiment, the thickness of the transition layer 4 and the thickness of the electrode layer 5 may not be limited, but when the solution is less during the solution film formation of the light-emitting functional layer 3, if the thickness of the transition layer 4 is greater than the thickness of the electrode layer 5, the transition layer 4 may hinder the diffusion of the solution, and once the contact surface is higher than the solution surface, the tension of the solution at the contact surface may be increased, so that the light-emitting functional layer 3 above the electrode layer 5 may have an excessive solution tension during the solution film formation, and the film thickness during the film formation may have a high middle and low sides, which may affect the light-emitting effect of the light-emitting device, and therefore, the thickness of the transition layer 4 is preferably not greater than the thickness of the electrode layer 5.
In some embodiments, the thickness of the transition layer 4 decreases in the direction extending from the bottom of the separator 2 toward the periphery, the surface of the transition layer may be formed by one or more of an inclined straight line or a curved line or a parallel straight line, and when the thickness of the transition layer 4 decreases, most of the solution is distributed above the electrode layer 5 during the film formation process of the luminescent functional layer 3, and the transition layer 4 functions as a buffer solution diffusion.
In particular, the thickness of the transition layer 4 in the area near the bottom of the separator 2 is greater than the thickness of the electrode layer 5, and the thickness of the transition layer 4 in contact with the electrode layer 5 is less than the thickness of the electrode layer 5. Of course, the thickness of the transition layer 4 in contact with the electrode layer 5 may also be equal to the thickness of the electrode layer 5.
Referring to fig. 2, fig. 2 is another schematic structural diagram of the array substrate 1 according to the embodiment of the present disclosure. The maximum thickness of the transition layer 4 close to the bottom of the separator 2 is smaller than the thickness of the electrode layer 5, the thickness decreasing trend of the transition layer 4 is weaker, and in the process that the light-emitting functional layer 3 is coated with a solution layer film, the whole transition region A plays a role in buffering, so that the film thickness of the light-emitting functional layer 3 above the electrode region B is uniform after the light-emitting functional layer 3 is formed.
In some embodiments, the separation distance between the bottom of the separator 2 and the electrode layer 5 is between 2-10 microns. A transition layer 4 is arranged between the bottom of the separator 2 and the electrode layer 5, wherein after the width of the transition layer 4 is less than 2 mm, the transition layer 4 cannot play a good buffer role, and after the width of the transition layer 4 is more than 10 mm, the luminescent functional layer 3 wastes more solution on the transition layer 4 in the solution film forming process, so that the width of the transition layer 4 is between 2 and 10 micrometers.
In some examples, the material of the electrode layer 5 includes metal oxide, metal element, and/or graphene. The electrode layer 5 is prepared into the electrode region B by vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition.
Specifically, the metal oxide may include high work function metals such as Ni, Au, and Pt, the simple metal may also be a metal such as Ni, Au, and Pt, and the metal oxide may also be indium tin oxide. And an electrode layer 5 is arranged in the electrode area B, when the electrode layer 5 is prepared, the electrode area B is surrounded by a rubber frame when the electrode layer 5 is prepared to the electrode area B, and then the electrode layer 5 is prepared in the range of the rubber frame through vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition and other modes.
In some embodiments, the light-emitting functional layer 3 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked, wherein the effective light-emitting region of the light-emitting functional layer 3 is a region located above the electrode region B, and the film thickness of the light-emitting functional layer 3 is more uniform in the region.
As can be seen from the above, the array substrate of the present embodiment includes a pixel defining layer, the pixel defining layer is disposed on the substrate 1 and includes a plurality of spacers 2 disposed at intervals, and an opening area C is formed between two adjacent spacers 2; the opening area C comprises an electrode area B and transition areas A positioned on two sides of the electrode area B, and transition layers 4 formed by extending from the bottom of the separating body 2 to the periphery are arranged on the transition areas A; and an electrode layer 5 positioned in the electrode region B, wherein the electrode layer 5 is arranged on the substrate 1; and the luminous functional layer 3 is positioned on the transition layer 4 and the electrode layer 5, and the luminous functional layer 3 is arranged in the opening area C, so that the film thickness of the luminous functional layer 3 positioned above the electrode layer 5 is uniform in the solution film forming process of the luminous functional layer 3, the attenuation degree of the luminous functional layer is uniform, the luminous service life of the luminous functional layer is prolonged, and the luminous effect of the organic light-emitting device is improved.
According to the structure described in the above embodiments, the present embodiment will be further described in terms of an array substrate manufacturing method.
Referring to fig. 1 to 3, fig. 3 is a schematic flow chart of a method for manufacturing an array substrate according to an embodiment of the present disclosure, where the specific flow of the method for manufacturing an array substrate may be as follows:
s101, providing a substrate 1.
In this embodiment, the substrate 1 may be a glass substrate or a substrate.
S102, forming a pixel definition layer and a transition layer 4 on the substrate 1, wherein the pixel definition layer is arranged on the substrate 1 and comprises a plurality of partition bodies 2 arranged at intervals, and an opening area C is formed between every two adjacent partition bodies 2; the opening region C comprises an electrode region B and transition regions A positioned at two sides of the electrode region B; the transition layer 4 is located in the transition area A and is formed by extending from the bottom of the separator 2 to the periphery;
in this embodiment, the pixel defining layer is disposed on the substrate 1, the pixel defining layer is obtained by etching a photoresist under an ultraviolet light condition, the bottom width of the spacers 2 of the pixel defining layer is greater than the top width, the opening region C is a region formed between two adjacent spacers 2 after the photoresist is etched under the ultraviolet light condition, the electrode region B is formed by completely etching the photoresist under the ultraviolet light condition, the transition region a is formed by partially etching the photoresist under the ultraviolet light condition, the transition layer 4 is formed on a part which is not etched, the width of the transition layer 4 is 2 to 10 micrometers, the transition layer 4 and the spacers 2 are made of the photoresist, and the transition layer 4 and the spacers 2 are integrated.
For example, the step of "forming the pixel defining layer and the transition layer 4 on the substrate 1" specifically includes:
coating a layer of photoresist material on the substrate 1;
providing a mask covered with a light-shielding sheet, wherein a first opening is formed in the light-shielding sheet, a second opening is formed in the mask, the first opening and the second opening are overlapped, and the aperture of the first opening is smaller than that of the second opening;
and coating a layer of photoetching solution on the photoresist material, placing the mask plate on the photoresist material, and etching to obtain a pixel defining layer and a transition layer 4, wherein the non-overlapping area of the first opening and the second opening corresponds to the transition area A of the opening area C, and the overlapping area of the first opening and the second opening corresponds to the electrode area B of the opening area C.
In this embodiment, the shading thin slice is a red light shading thin slice, the size of the shading thin slice is equal to that of the mask plate, the number of the first holes in the shading thin slice is equal to that of the second holes in the mask plate, the first holes and the second holes are opened at the same relative positions, the shading thin slice is overlapped and laid above the mask plate, when the hole diameter of the first hole is smaller than that of the second hole, the shading thin slice can partially block the ultraviolet light for etching, the etching effect of the ultraviolet light is reduced, after the ultraviolet light is used for etching, the transition layer 4 is formed at the position corresponding to the non-overlapping area of the first hole and the second hole, the overlapping area of the first hole and the second hole is completely etched, and the area formed by complete etching is the electrode area B.
And S103, forming an electrode layer 5 on the substrate 1, wherein the electrode layer 5 is positioned in the electrode area B.
In this embodiment, the material of the electrode layer 5 may include a metal oxide, a simple metal substance, and/or graphene, and the electrode layer 5 may be prepared into the electrode region B by vacuum evaporation, sputtering, physical vapor deposition, or chemical vapor deposition.
Specifically, the metal oxide may include high work function metals such as Ni, Au, and Pt, the simple metal may also be a metal such as Ni, Au, and Pt, and the metal oxide may also be indium tin oxide. And an electrode layer 5 is arranged in the electrode area B, when the electrode layer 5 is prepared, the electrode area B is surrounded by a rubber frame when the electrode layer 5 is prepared to the electrode area B, and then the electrode layer 5 is prepared in the range of the rubber frame through vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition and other modes.
S104, forming a light-emitting functional layer 3 in the opening area C, wherein the light-emitting functional layer 3 is positioned on the transition layer 4 and the electrode layer 5.
In this embodiment, the light-emitting functional layer 3 is formed on the transition layer 4 and the electrode layer 5 by a solution film-forming method, wherein an effective light-emitting region of the light-emitting functional layer 3 is a region located above the electrode region B, a film thickness of the light-emitting functional layer 3 is more uniform in this region, and the light-emitting functional layer 3 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked.
From the above, the array substrate manufacturing method of this embodiment includes providing a substrate 1, forming a pixel defining layer and a transition layer 4 on the substrate 1, where the pixel defining layer is disposed on the substrate 1 and includes a plurality of spacers 2 disposed at intervals, an opening region C is formed between two adjacent spacers 2, the opening region C includes an electrode region B and transition regions a located at two sides of the electrode region B, the transition layer 4 is located in the transition regions a and extends from the bottom to the periphery of the spacers 2, forming an electrode layer 5 on the substrate 1, the electrode layer 5 is located in the electrode region B, forming a light emitting functional layer 3 in the opening region C, and the light emitting functional layer 3 is located on the transition layers 4 and the electrode layer 5, so that the light emitting functional layer 3 has a uniform film thickness above the electrode layer 5 during solution film forming, the attenuation degree of the light-emitting functional layer is uniform, so that the light-emitting service life of the light-emitting functional layer is prolonged, and the light-emitting effect of the organic light-emitting device is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. An array substrate, comprising:
a substrate;
a pixel defining layer disposed on the substrate and including a plurality of spacers disposed at intervals, an opening region being formed between two adjacent spacers; the opening region comprises an electrode region and transition regions positioned on two sides of the electrode region;
a transition layer located in the transition region and formed extending from the bottom toward the periphery of the separator;
the electrode layer is arranged on the substrate and positioned in the electrode area, the thickness of the transition layer is not more than that of the electrode layer, and the transition layer and the electrode layer are arranged in the opening area in the same layer;
and the light-emitting functional layer is arranged in the opening area and is positioned on the transition layer and the electrode layer, and the part of the light-emitting functional layer above the electrode layer is an effective light-emitting area.
2. The array substrate of claim 1, wherein the thickness of the transition layer decreases along the direction that the bottom of the spacer extends toward the periphery.
3. The array substrate of claim 2, wherein the bottom portion of the separator and the electrode layer are separated by a distance of between 2-10 microns.
4. The array substrate of claim 1, wherein the material of the electrode layer comprises metal oxide, elemental metal and/or graphene.
5. The array substrate of claim 1, wherein the electrode layer is prepared into the electrode region by physical vapor deposition or chemical vapor deposition.
6. The array substrate of claim 1, wherein the light-emitting functional layer comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked.
7. A preparation method of an array substrate is characterized by comprising the following steps:
providing a substrate;
forming a pixel defining layer and a transition layer on the substrate, wherein the pixel defining layer is arranged on the substrate and comprises a plurality of partition bodies arranged at intervals, an opening area is formed between every two adjacent partition bodies and comprises an electrode area and transition areas positioned on two sides of the electrode area, and the transition areas are positioned in the transition areas and formed by extending from the bottoms of the partition bodies to the periphery;
forming an electrode layer on the substrate, wherein the electrode layer is positioned in the electrode area, the thickness of the transition layer is not more than that of the electrode layer, and the transition layer and the electrode layer are arranged in the opening area at the same layer;
and forming a light-emitting functional layer in the opening region, wherein the light-emitting functional layer is positioned on the transition layer and the electrode layer, and the part of the light-emitting functional layer above the electrode layer is an effective light-emitting region.
8. The method for preparing an array substrate according to claim 7, wherein the step of forming the pixel defining layer and the transition layer on the substrate specifically comprises:
coating a layer of photoresist material on the substrate;
providing a mask covered with a light-shielding sheet, wherein a first opening is formed in the light-shielding sheet, a second opening is formed in the mask, the first opening and the second opening are overlapped, and the aperture of the first opening is smaller than that of the second opening;
and coating a layer of photoetching liquid on the photoresist material, placing the mask plate on the photoresist material, and etching to obtain a pixel defining layer and a transition layer, wherein the non-overlapping region of the first opening and the second opening corresponds to the transition region of the opening region, and the overlapping region of the first opening and the second opening corresponds to the electrode region of the opening region.
9. A display panel comprising the array substrate of any one of claims 1 to 6.
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| CN201910597304.3A CN110350009B (en) | 2019-07-04 | 2019-07-04 | Array substrate, preparation method thereof and display panel |
| PCT/CN2019/115565 WO2021000478A1 (en) | 2019-07-04 | 2019-11-05 | Array substrate and manufacturing method therefor, and display panel |
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| CN111710709A (en) * | 2020-07-02 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113054147A (en) * | 2021-03-09 | 2021-06-29 | 武汉华星光电半导体显示技术有限公司 | Mask plate, display panel and manufacturing method thereof |
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| CN104241329A (en) * | 2014-08-22 | 2014-12-24 | 京东方科技集团股份有限公司 | Display panel provided with pixel defining layer and manufacturing method of pixel defining layer |
| KR102430705B1 (en) * | 2017-10-30 | 2022-08-10 | 삼성디스플레이 주식회사 | Organic light emitting display device and method of manufacturing organic light emitting display device |
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