WO2021000478A1

WO2021000478A1 - Array substrate and manufacturing method therefor, and display panel

Info

Publication number: WO2021000478A1
Application number: PCT/CN2019/115565
Authority: WO
Inventors: 李祥龙
Original assignee: 深圳市华星光电半导体显示技术有限公司
Priority date: 2019-07-04
Filing date: 2019-11-05
Publication date: 2021-01-07
Also published as: CN110350009A; CN110350009B

Abstract

The invention relates to an array substrate and a manufacturing method therefor, and a display panel. A light-emitting functional layer is arranged in an opening area, so that the film thickness of the light-emitting functional layer above an electrode layer is uniform during the process of solution film-forming of the light-emitting functional layer, such that the attenuation of the light-emitting functional layer is uniform, thereby improving the light-emitting lifetime of the light-emitting functional layer, and improving the light-emitting effect of an organic light-emitting device.

Description

Array substrate and preparation method thereof and display panel

Technical field

The present disclosure relates to the liquid crystal panel industry, and more specifically, to an array substrate, a preparation method thereof, and a display panel.

Background technique

OLED (Organic Light-Emitting Diode) is considered to be the next-generation flat panel display emerging application technology due to its good self-luminous characteristics, high contrast, fast response, and flexible display.

Among the methods for making organic functional thin film layers of OLED devices, the solution film forming method is one of the more widely used methods. The solution film forming method is to coat the solution on the substrate first, and then use a vacuum drying oven to dry it. In the drying process, the solvent of the solution is removed, so that the solute is precipitated on the substrate and forms a thin film. However, since there is a layer of hydrophobic substance on the surface of the pixel defining layer on the substrate, such as fluoride, after the solution is infiltrated, the film deposited on the substrate will have a concave or convex shape, resulting in uneven film thickness after vacuum drying. , Thereby affecting the use of organic light-emitting devices.

In summary, in the solution film formation process of the organic light-emitting device, the problem of uneven film thickness after film formation often occurs, which affects the light-emitting effect of the organic light-emitting device.

Therefore, it is necessary to propose solutions to the problems in the prior art.

technical problem

The purpose of the present disclosure is to provide an array substrate, a preparation method thereof, and a display panel, which can solve the problems in the prior art.

Technical solutions

The purpose of the present disclosure is to provide an array substrate, a preparation method thereof, and a display device, which can enable the organic light emitting device to have a thin film with a uniform thickness above the electrode area during the solution film formation process of the organic light emitting device.

According to the first aspect of the present disclosure, the first aspect of the embodiments of the present disclosure provides an array substrate, including: a substrate; a pixel definition layer, the pixel definition layer is disposed on the substrate, and includes a plurality of spaced apart A separator, an open area is formed between two adjacent separators; the open area includes an electrode area and a transition area located on both sides of the electrode area; a transition layer, the transition layer is located in the transition area , And extending from the bottom of the separator to the periphery; an electrode layer, the electrode layer is disposed on the substrate, and located in the electrode area; a light-emitting function layer, the light-emitting function layer is disposed on the In the opening area and located on the transition layer and the electrode layer, the light-emitting function layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer that are stacked in sequence; The thickness of the layer shows a decreasing trend in the direction extending from the bottom of the separator to the periphery.

Further, the thickness of the transition layer is not greater than the thickness of the electrode layer.

Further, the separation distance between the bottom of the separator and the electrode layer is between 2-10 microns.

Further, the material of the electrode layer includes at least one of metal oxide, metal element, and graphene.

Further, the electrode layer is prepared into the electrode area by at least one method of vacuum evaporation, sputtering, physical vapor deposition and chemical vapor deposition.

According to a second aspect of the present disclosure, embodiments of the present disclosure provide a method for manufacturing an array substrate, including: providing a substrate; forming a pixel definition layer and a transition layer on the substrate, the pixel definition layer being disposed on the substrate , Including a plurality of spacers arranged at intervals, an open area is formed between two adjacent separators; the open area includes an electrode area and a transition area located on both sides of the electrode area; the transition layer is located at the The transition area is formed extending from the bottom of the separator toward the periphery; an electrode layer is formed on the substrate, and the electrode layer is located in the electrode area; a light-emitting function layer is formed in the opening area, the The light-emitting function layer is located on the transition layer and the electrode layer.

Further, the step of forming a pixel definition layer and a transition layer on the substrate specifically includes: coating a layer of photoresist material on the substrate; providing a mask covered with a light-shielding sheet, the light-shielding sheet A first opening is provided on the mask, a second opening is provided on the mask, the first opening and the second opening overlap each other, and the diameter of the first opening is smaller than that of the second opening The aperture of the hole; coat a layer of photoresist solution on the photoresist material, and place the mask on the photoresist material, and etch to obtain a pixel definition layer and a transition layer, wherein the first The non-overlapping area of the opening and the second opening corresponds to the transition area of the opening area, and the overlapping area of the first opening and the second opening corresponds to the electrode area of the opening area.

According to a third aspect of the present disclosure, embodiments of the present disclosure also provide a display panel, the display panel includes an array substrate; the array substrate includes: a substrate; a pixel definition layer, the pixel definition layer is disposed on The substrate includes a plurality of spacers arranged at intervals, and an open area is formed between two adjacent separators; the open area includes an electrode area and a transition area located on both sides of the electrode area; a transition Layer, the transition layer is located in the transition area and is formed extending from the bottom of the separator to the periphery; an electrode layer, the electrode layer is provided on the substrate and located in the electrode area; and A light-emitting functional layer, the light-emitting functional layer is arranged in the opening area and on the transition layer and the electrode layer.

Beneficial effect

Compared with the prior art, the array substrate and the preparation method thereof and the display panel provided by the present disclosure include a pixel definition layer, the pixel definition layer is arranged on the substrate and includes a plurality of spacers arranged at intervals, adjacent An open area is formed between the two separators; the open area includes an electrode area and a transition area located on both sides of the electrode area, and the transition area is provided with a shape extending from the bottom of the separator to the periphery And an electrode layer located in the electrode area, the electrode layer is provided on the substrate; a light-emitting functional layer located on the transition layer and the electrode layer, the light-emitting functional layer is provided in the opening In the area, the film thickness of the light-emitting functional layer above the electrode layer is uniform during the film formation of the light-emitting functional layer in the solution, so that the attenuation of the light-emitting functional layer is uniform, thereby increasing the light-emitting life of the light-emitting functional layer and increasing the organic light emission The luminous effect of the device.

Description of the drawings

FIG. 1 is a schematic diagram of the structure of an array substrate provided by an embodiment of the disclosure.

2 is a schematic diagram of another structure of an array substrate provided by an embodiment of the disclosure.

FIG. 3 is a schematic flowchart of a method for manufacturing an array substrate provided by an embodiment of the disclosure.

本揭示的实施方式Embodiments of the present disclosure

The technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present disclosure.

The terms "first", "second", "third", etc. (if any) in the specification and claims of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and not necessarily used to describe a specific order Or precedence. It should be understood that the objects described in this way can be interchanged under appropriate circumstances. In addition, the terms "include" and "have" and any variations of them are intended to cover non-exclusive inclusion.

In the description of the present disclosure, the drawings discussed below and various embodiments used to describe the principle of the present disclosure are only for illustration, and should not be construed as limiting the scope of the present disclosure. Those skilled in the art will understand that the principles of the present disclosure can be implemented in any suitably arranged system. Exemplary embodiments will be described in detail, and examples of these embodiments are shown in the drawings. In addition, a terminal according to an exemplary embodiment will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings refer to the same elements.

The terms used in the specification of the present disclosure are only used to describe specific embodiments, and are not intended to show the concept of the present disclosure. Unless there is a clearly different meaning in the context, the expression used in the singular form encompasses the expression in the plural form. In the specification of this disclosure, it should be understood that terms such as "including", "having" and "containing" are intended to indicate the possibility of the features, numbers, steps, actions, or combinations thereof disclosed in the specification of this disclosure, but not The possibility that one or more other features, numbers, steps, actions or combinations thereof may exist or may be added is excluded. The same reference numerals in the drawings refer to the same parts.

Please refer to FIG. 1, which is a schematic structural diagram of an array substrate provided by an embodiment of the present disclosure. The entire column of substrates includes a substrate 1 and a pixel definition layer disposed on the substrate 1. The pixel definition layer includes a spacer 2 arranged at intervals, and an opening area C is formed between two adjacent spacers 2, so The opening area C includes an electrode area B, and a transition area A located on both sides of the electrode area B. It also includes a transition layer 4 located in the transition area A. The transition layer 4 extends from the lower portion of the separator 2 The electrode layer 5 is located in the electrode area B, the electrode layer 5 is disposed on the substrate 1, and the light-emitting function layer 3 is located in the opening area C. The light-emitting function layer 3 Located on the transition layer 4 and the electrode layer 5.

Specifically, the substrate 1 may be a glass substrate, the pixel definition layer is obtained by laser etching a photoresist material, the width of the bottom of the spacer 2 of the pixel definition layer is greater than the width of the top, and the transition layer 4 It is integrally formed with the same material as the separator 2, the electrode layer 5 is in contact with the transition layer 4, wherein the part of the light-emitting function layer 3 above the electrode layer 5 is the effective light-emitting area, and the transition layer 4 is The light-emitting function layer 3 plays a role in reducing the tension formed when the solution is in contact with the separator 2 during the film formation process of the solution, and reduces the phenomenon of uneven film thickness after the solution is formed due to the tension. The function of the layer 4 enables the light-emitting functional layer 3 to reduce the tension formed by the contact surface during the film formation of the solution, so that the solution is evenly spread, and the film thickness is uniform after the solution is formed. When the effective light-emitting area of the light-emitting function layer 3 is located above the electrode layer 5, it is beneficial for the light-emitting function layer 3 to maintain a uniform film thickness during the solution film formation process, which is beneficial to the light-emitting effect of the light-emitting device.

In this embodiment, the thickness of the transition layer 4 and the thickness of the electrode layer 5 may not be limited. However, because in the process of forming the light-emitting function layer 3 solution, when the solution is small, if the transition layer 4 The thickness of the transition layer 4 is greater than the thickness of the electrode layer 5, the transition layer 4 will hinder the diffusion of the solution. Once the contact surface is higher than the solution surface, the tension of the solution on the contact surface will increase, thereby making the light emitting function above the electrode layer 5. In the process of forming layer 3 in the solution film, the problem of excessive solution tension occurs, which causes the film thickness of the film to appear in the middle and lower sides, which affects the light-emitting effect of the light-emitting device. Therefore, the thickness of the transition layer 4 is best not to It is greater than the thickness of the electrode layer 5.

In some embodiments, the thickness of the transition layer 4 shows a decreasing trend along the direction extending from the bottom of the separator 2 toward the periphery, and the surface of the transition layer may be one of an inclined straight line or a curved line or a parallel straight line or Various configurations. When the thickness of the transition layer 4 shows a decreasing trend, most of the solution is distributed on the electrode layer 5 during the film formation of the light-emitting functional layer 3, and the transition layer 4 functions as a buffer solution diffusion .

Specifically, the thickness of the transition layer 4 near the bottom of the separator 2 is greater than the thickness of the electrode layer 5, and the thickness of the transition layer 4 in contact with the electrode layer 5 is less than that of the electrode layer 5. thickness of. Of course, the thickness of the transition layer 4 in contact with the electrode layer 5 may also be equal to the thickness of the electrode layer 5.

Please refer to FIG. 2, which is another schematic diagram of the structure of the array substrate 1 provided by an embodiment of the present disclosure. Wherein, the maximum thickness of the transition layer 4 near the bottom of the separator 2 is less than the thickness of the electrode layer 5, the thickness of the transition layer 4 has a weak tendency to decrease, and the light emitting function layer 3 is in the solution layer. During the filming process, the entire transition area A serves as a buffer, so that after the light-emitting function layer 3 is formed, the film thickness of the light-emitting function layer 3 above the electrode area B is uniform.

In some embodiments, the separation distance between the bottom of the separator 2 and the electrode layer 5 is between 2-10 microns. Between the bottom of the separator 2 and the electrode layer 5 is the transition layer 4. When the width of the transition layer 4 is less than 2 mm, the transition layer 4 cannot play a good buffering effect. After the width is greater than 10 mm, the light-emitting function layer 3 will waste a lot of solution on the transition layer 4 during the solution film formation process, so the width of the transition layer 4 is between 2-10 microns.

In some examples, the material of the electrode layer 5 includes metal oxide, metal element, and/or graphene. The electrode layer 5 is prepared into the electrode area B by vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition.

Specifically, the metal oxide may be composed of high work function metals such as Ni, Au, Pt, the elemental metal may also be metals such as Ni, Au, Pt, and the metal oxide may also be indium tin oxide, etc. . All electrode layers 5 are provided in the electrode area B. When preparing the electrode layer 5, when preparing the electrode layer 5 to the electrode area B, the electrode area B is surrounded by a plastic frame, and then the The electrode layer 5 is prepared by vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition within the frame.

In some embodiments, the light-emitting functional layer 3 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially stacked, wherein the light-emitting functional layer 3 effectively emits light. The area is the area above the electrode area B, and the film thickness of the light-emitting function layer 3 is more uniform within this area.

It can be seen from the above that the array substrate of this embodiment includes a pixel definition layer, the pixel definition layer is disposed on the substrate 1, and includes a plurality of spacers 2 arranged at intervals, one of two adjacent spacers 2 An opening area C is formed between; the opening area C includes an electrode area B, and a transition area A located on both sides of the electrode area B, and the transition area A is formed to extend from the bottom of the separator 2 toward the periphery. The transition layer 4; and the electrode layer 5 located in the electrode area B, the electrode layer 5 is provided on the substrate 1; the light emitting function layer 3 located on the transition layer 4 and the electrode layer 5, the The light-emitting functional layer 3 is arranged in the opening area C, so that the thickness of the light-emitting functional layer 3 above the electrode layer 5 is uniform during the film formation of the light-emitting functional layer 3, so that the attenuation of the light-emitting functional layer is uniform Therefore, the light-emitting life of the light-emitting functional layer is increased, and the light-emitting effect of the organic light-emitting device is improved.

According to the structure described in the foregoing embodiment, this embodiment will further describe the method for manufacturing the array substrate.

Please refer to FIGS. 1-3. FIG. 3 is a schematic flow chart of a method for preparing an array substrate according to an embodiment of the present disclosure. The specific flow of the method for preparing an array substrate may be as follows:

S101. Provide substrate 1.

In this embodiment, the substrate 1 may be a glass substrate or a substrate.

S102. A pixel definition layer and a transition layer 4 are formed on the substrate 1. The pixel definition layer is disposed on the substrate 1, and includes a plurality of spacers 2 arranged at intervals, one of two adjacent spacers 2 An opening area C is formed therebetween; the opening area C includes an electrode area B and a transition area A located on both sides of the electrode area B; the transition layer 4 is located in the transition area A and is separated from the separator 2 The bottom extends to the periphery;

In this embodiment, the pixel definition layer is disposed on the substrate 1, the pixel definition layer is obtained by etching a photoresist material under ultraviolet light conditions, and the bottom width of the spacer 2 of the pixel definition layer is greater than The width of the top, the opening area C is the area formed between the two adjacent separators 2 after the photoresist material is etched under ultraviolet light, and the electrode area B is the photoresist material in the ultraviolet light. It is completely etched under the conditions, the transition area A is formed by partial etching of the photoresist material under ultraviolet light conditions, and the unetched part forms the transition layer 4, and the width of the transition layer 4 is Between 2-10 microns, the transition layer 4 and the separator 2 are both composed of photoresist materials, and the transition layer 4 and the separator 2 are integrated.

For example, the above step of "forming a pixel definition layer and a transition layer 4 on the substrate 1" specifically includes:

Coating a layer of photoresist material on the substrate 1;

Provide a mask covered with a light-shielding sheet, the light-shielding sheet is provided with a first opening, the mask is provided with a second opening, and the first opening and the second opening overlap each other, And the diameter of the first opening is smaller than the diameter of the second opening;

Coat a layer of photoresist solution on the photoresist material, place the mask on the photoresist material, and etch to obtain a pixel definition layer and a transition layer 4, wherein the first opening and The non-overlapping area of the second opening corresponds to the transition area A of the opening area C, and the overlapping area of the first opening and the second opening corresponds to the electrode area B of the opening area C.

In this embodiment, the light-shielding sheet is a red light-shielding sheet, the size of the light-shielding sheet is equal to the size of the mask, and the number of first openings on the light-shielding sheet is equal to that of the second openings on the mask. The number is equal, the first opening and the second opening are opened at the same relative position, and the light-shielding sheet is laid on top of the mask. When the diameter of the first opening is smaller than that of the second opening At this time, the light-shielding sheet will partially block the ultraviolet light for etching and reduce the etching effect of ultraviolet light. When the ultraviolet light is used for etching, the position corresponding to the non-overlapping area of the first opening and the second opening The transition layer 4 is formed, the overlapping area of the first opening and the second opening is completely etched, and the completely etched area is the electrode region B.

S103. An electrode layer 5 is formed on the substrate 1, and the electrode layer 5 is located in the electrode area B.

In this embodiment, the material of the electrode layer 5 may include metal oxide, elemental metal and/or graphene, and the electrode layer 5 may be prepared by vacuum evaporation, sputtering, physical vapor deposition or chemical vapor deposition. The electrode area B.

S104. Form a light-emitting functional layer 3 in the opening area C, and the light-emitting functional layer 3 is located on the transition layer 4 and the electrode layer 5.

In this embodiment, the light-emitting functional layer 3 is formed on the transition layer 4 and the electrode layer 5 by a solution film formation method, wherein the effective light-emitting area of the light-emitting functional layer 3 is the area above the electrode area B In this area, the thickness of the light-emitting functional layer 3 is more uniform, and the light-emitting functional layer 3 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked. .

It can be seen from the above that the preparation method of the array substrate of this embodiment includes providing a substrate 1, forming a pixel definition layer and a transition layer 4 on the substrate 1, and the pixel definition layer is disposed on the substrate 1 and includes a plurality of spaces. The separator 2 is set, and an opening area C is formed between two adjacent separators 2. The opening area C includes an electrode area B and a transition area A located on both sides of the electrode area B. The transition layer 4 is located in the transition area A and extends from the bottom of the separator 2 to the periphery. An electrode layer 5 is formed on the substrate 1. The electrode layer 5 is located in the electrode area B and is formed in the opening A light-emitting functional layer 3 is formed in the region C, and the light-emitting functional layer 3 is located on the transition layer 4 and the electrode layer 5, so that the light-emitting functional layer 3 is located above the electrode layer 5 during the film formation of the solution. The film thickness of 3 is uniform, so that the attenuation degree of the light-emitting functional layer is uniform, thereby increasing the light-emitting life of the light-emitting functional layer and improving the light-emitting effect of the organic light-emitting device.

The above describes in detail an array substrate, a preparation method thereof, and a display panel provided by the embodiments of the present disclosure. Specific examples are used in this article to illustrate the principles and implementations of the present disclosure. The description of the above embodiments is only for To help understand the methods and core ideas of this disclosure; at the same time, for those skilled in the art, according to the ideas of this disclosure, there will be changes in the specific implementation and scope of application. In summary, the content of this specification does not It should be understood as a limitation of the present disclosure.

Industrial applicability

The subject of this disclosure can be manufactured and used in industry, and has industrial applicability.

Claims

An array substrate, which includes:

A substrate;

A pixel definition layer, the pixel definition layer is disposed on the substrate, and includes a plurality of spacers arranged at intervals, and an opening region is formed between two adjacent spacers; the opening region includes an electrode region and Transition areas on both sides of the electrode area;

A transition layer, the transition layer is located in the transition zone and extends from the bottom of the separator to the periphery;

An electrode layer, the electrode layer is disposed on the substrate and located in the electrode area; and

A light-emitting functional layer, the light-emitting functional layer is arranged in the opening area and located on the transition layer and the electrode layer, the light-emitting functional layer includes a hole injection layer, a hole transport layer, and a light emitting Layer, electron transport layer and electron injection layer;

The thickness of the transition layer shows a decreasing trend along the direction extending from the bottom of the separator to the periphery.
The array substrate according to claim 1, wherein the thickness of the transition layer is not greater than the thickness of the electrode layer.
The array substrate according to claim 1, wherein the separation distance between the bottom of the separator and the electrode layer is between 2-10 microns.
5. The array substrate according to claim 1, wherein the electrode layer is made of at least one of metal oxide, simple metal, and graphene.
The array substrate according to claim 1, wherein the electrode layer is prepared into the electrode area by at least one method of vacuum evaporation, sputtering, physical vapor deposition, and chemical vapor deposition.
A preparation method of an array substrate includes:

Provide substrate;

A pixel definition layer and a transition layer are formed on the substrate. The pixel definition layer is arranged on the substrate and includes a plurality of spacers arranged at intervals. An opening area is formed between two adjacent spacers. The opening area includes an electrode area and transition areas located on both sides of the electrode area, and the transition layer is located in the transition area and extends from the bottom of the separator to the periphery;

Forming an electrode layer on the substrate, the electrode layer being located in the electrode area; and

A light-emitting functional layer is formed in the opening area, and the light-emitting functional layer is located on the transition layer and the electrode layer.
8. The method for manufacturing an array substrate according to claim 6, wherein the step of forming a pixel definition layer and a transition layer on the substrate specifically comprises:

Coating a layer of photoresist material on the substrate;

Provide a mask covered with a light-shielding sheet, the light-shielding sheet is provided with a first opening, the mask is provided with a second opening, and the first opening and the second opening overlap each other, And the diameter of the first opening is smaller than the diameter of the second opening; and

Coat a layer of photoresist solution on the photoresist material, place the mask on the photoresist material, and etch to obtain a pixel definition layer and a transition layer, wherein the first opening and the second The non-overlapping area of the two openings corresponds to the transition area of the opening area, and the overlapping area of the first opening and the second opening corresponds to the electrode area of the opening area.
A display panel, wherein the display panel includes an array substrate; the array substrate includes:

A substrate;

A pixel definition layer, the pixel definition layer is disposed on the substrate, and includes a plurality of spacers arranged at intervals, and an opening region is formed between two adjacent spacers; the opening region includes an electrode region and Transition areas on both sides of the electrode area;

A transition layer, the transition layer is located in the transition zone and extends from the bottom of the separator to the periphery;

An electrode layer, the electrode layer is disposed on the substrate and located in the electrode area; and

A light-emitting functional layer, the light-emitting functional layer is arranged in the opening area and located on the transition layer and the electrode layer.
8. The display panel according to claim 8, wherein the thickness of the transition layer is not greater than the thickness of the electrode layer.
8. The display panel of claim 8, wherein the separation distance between the bottom of the separator and the electrode layer is between 2-10 microns.
8. The display panel according to claim 8, wherein the material of the electrode layer includes at least one of metal oxide, simple metal, and graphene.
8. The display panel according to claim 8, wherein the electrode layer is prepared into the electrode area by at least one method of vacuum evaporation, sputtering, physical vapor deposition, and chemical vapor deposition.