CN116200730A - Grounding wire structure of plasma enhanced chemical vapor deposition - Google Patents
Grounding wire structure of plasma enhanced chemical vapor deposition Download PDFInfo
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- CN116200730A CN116200730A CN202310197600.0A CN202310197600A CN116200730A CN 116200730 A CN116200730 A CN 116200730A CN 202310197600 A CN202310197600 A CN 202310197600A CN 116200730 A CN116200730 A CN 116200730A
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- grounding wire
- grounding
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- chemical vapor
- process cavity
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 31
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 230000008859 change Effects 0.000 claims abstract description 6
- 238000012790 confirmation Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 10
- 238000002847 impedance measurement Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
- H01R4/64—Connections between or with conductive parts having primarily a non-electric function, e.g. frame, casing, rail
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
The invention provides a grounding wire structure for plasma enhanced chemical vapor deposition, which comprises a vacuum side grounding wire, wherein one end of the vacuum side grounding wire is connected with a lower electrode, a mounting hole is formed in a process cavity, a grounding wire body is mounted in the mounting hole and is in insulating connection with the process cavity, the other end of the vacuum side grounding wire is connected with the grounding wire body, the grounding wire body is connected with an atmosphere side grounding wire, one side of the atmosphere side grounding wire is connected with the process cavity, a variable resistor is connected to the atmosphere side grounding wire, the grounding wire body is also connected with a detection mechanism, the detection mechanism is connected with a control module, and the control module controls the size of the variable resistor according to a detection result to change the on-off state of the atmosphere side grounding wire. The invention can timely monitor the breaking quantity and breaking position of the grounding wire on the vacuum side, and under the condition that the grounding wire on the partial vacuum side breaks, the vertical horse is not required to maintain the process cavity, the period of maintaining the process cavity is prolonged, and the productivity of equipment can be improved.
Description
Technical Field
The invention relates to the technical field of grounding structures of chemical vapor deposition equipment, in particular to a grounding wire structure of plasma enhanced chemical vapor deposition.
Background
Plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVapor Deposition, PECVD) for depositing thin films such as: the semiconductor layer-amorphous silicon, the insulating layer-silicon oxide and silicon nitride are indispensable manufacturing processes in the fields of chips, display screens and thin film solar energy.
In the conventional chemical vapor deposition apparatus, as shown in fig. 1, chemical gas enters the process chamber 14 from the gas inlet 17, and is uniformly diffused into the process chamber 14 by the upper electrode gas diffusion plate 18, and after rf power is applied, the chemical gas is dissociated into plasma necessary for film deposition.
The bottom electrode 15 carrying the glass substrate 19 can be height-adjusted to change the plasma density, and the ground wire 16 connects the outer edge of the bottom electrode with the process chamber, which is responsible for guiding the plasma to deposit a film more uniformly onto the glass substrate, improving the film quality.
The partial sectional view of the current grounding wire structure is shown in fig. 2, one end of the grounding wire 16 is connected with the lower electrode 15, and the other end of the grounding wire is connected with the bottom of the process chamber 14, so that plasma is guided to be more uniformly distributed. The grounding wire is made of aluminum material into a strip shape.
In order to avoid the fatigue fracture of the metal of the grounding wire caused by long-time action and continuous high-temperature heating of the lower electrode 15, enough grounding wire interfaces are added at the beginning of the design of the lower electrode, and the influence of the fracture of the grounding wire on the quality of the film is reduced. Fig. 3 is a top view of the ground wire assembly and the bottom electrode, and as can be seen from fig. 3, the ground wires are densely distributed on the outer edge of the bottom electrode and are connected to the bottom of the process chamber.
The higher the action amplitude, frequency and use temperature of the lower electrode and the higher the power in the coating process, the longer the service life of the grounding wire can be shortened. If the grounding wire is broken by one side for a plurality of times, the film thickness of the film is single-side and thin beyond specification, and the quality of the film cannot meet the yield requirement. In addition, the breakage of the ground wire can cause local overscaling of the film thickness of the film and also change the film stress of the area, and the coated glass substrate is shown in fig. 4, wherein the first side length 191 is shorter than the second side length 192, which means that the first side length 191 is shrunk inwards and increased, thereby causing the yield to be overscaling, causing the process cavity to take 5 days for maintenance, and causing the productivity to be insufficient due to frequent maintenance, which is not in line with the commercial benefit.
Disclosure of Invention
The invention aims to solve the technical problem of providing a grounding wire structure of plasma enhanced chemical vapor deposition, which is used for detecting the breakage condition of the grounding wire and controlling the on-off of the grounding wire at the position opposite to the grounding wire according to the breakage condition of the grounding wire, thereby improving the yield of products and improving the productivity.
The invention is realized in the following way: the invention provides a grounding wire structure of plasma enhanced chemical vapor deposition, which comprises a plurality of vacuum side grounding wires, wherein one end of each vacuum side grounding wire is connected with a lower electrode, a plurality of mounting holes are formed in a process cavity, each mounting hole is provided with a grounding wire body, and the grounding wire body is in insulating connection with the process cavity;
the vacuum side grounding wires are in one-to-one correspondence with the grounding wire bodies, the other ends of the vacuum side grounding wires are connected with the corresponding grounding wire bodies, the grounding wire bodies are connected with atmosphere side grounding wires, one ends of the atmosphere side grounding wires, which are far away from the grounding wire bodies, are connected with a process cavity, the atmosphere side grounding wires are connected with variable resistors, the grounding wire bodies are also connected with detection mechanisms for detecting whether the vacuum side grounding wires are broken or not, the detection mechanisms are connected with control modules, and the control modules control the sizes of the variable resistors according to detection results to change the on-off state of the atmosphere side grounding wires;
the detection mechanism comprises an impedance confirmation wire, one end of the impedance confirmation wire is connected with the ground wire body, the other end of the impedance confirmation wire is connected with the lower electrode, an impedance measurement assembly is arranged on the impedance confirmation wire, and the impedance measurement assembly is electrically connected with the control module.
Further, the grounding wire body is composed of a flat plate and a boss arranged at the top of the flat plate, the boss is embedded into the mounting hole, and a gap is reserved between the boss and the mounting hole.
Further, the length and the width of the boss are smaller than those of the flat plate.
Further, an insulating gasket is arranged at the top of the platform and used for insulating the flat plate and the process cavity.
Further, a sealing ring for preventing leakage of chemical gas is arranged at the top of the insulating gasket.
Further, the flat plate is provided with a connecting hole, an insulating sleeve is arranged in the connecting hole, a connecting bolt penetrates through the insulating sleeve to be connected with the process cavity, and the end head of the connecting bolt is abutted to the end part of the insulating sleeve.
The invention has the advantages that: after the detection mechanism detects that the vacuum side ground wire breaks, the control module controls the variable resistance value opposite to the vacuum side ground wire to be increased, so that the other vacuum side ground wire is disconnected. By adopting the mode, after the glass substrate is coated, the difference between the first side length 191 and the second side length 192 is obviously reduced, and the problem that the thickness of the film is locally out of specification is also avoided, so that the quality of the coated film is improved.
After the scheme is adopted, the breaking quantity and the breaking position of the grounding wire on the vacuum side can be timely monitored, and under the condition that the grounding wire on the partial vacuum side is broken, a vertical horse is not needed to maintain the process cavity, the period of the process cavity is prolonged, and the productivity of equipment can be improved.
Drawings
The invention will be further described with reference to examples of embodiments with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a conventional chemical vapor deposition apparatus;
FIG. 2 is a partial cross-sectional view of a prior art ground wire;
FIG. 3 is a top view of a conventional ground wire assembly and bottom electrode;
FIG. 4 is a glass substrate after coating a film on a part of a grounding wire in the prior art;
FIG. 5 is a schematic view of the ground wire structure of the present invention;
fig. 6 is a partial enlarged view at a in fig. 5.
In the drawings, the components represented by the respective reference numerals are as follows:
1. grounding wires are connected to the vacuum side; 2. a ground wire body; 3. an atmospheric side grounding wire; 4. a variable resistor; 5. a detection mechanism; 6. a control module; 7. a flat plate; 8. a boss; 9. an insulating spacer; 10. a seal ring; 11. an insulating sleeve; 12. impedance confirmation leads; 13. an impedance measurement assembly; 14. a process chamber; 15. a lower electrode; 16. a ground wire; 17. an air inlet; 18. an upper electrode gas diffusion plate; 19. a glass substrate.
Detailed Description
Referring to fig. 5-6, the invention provides a grounding wire structure for plasma enhanced chemical vapor deposition, comprising a plurality of vacuum side grounding wires 1, wherein one end of each vacuum side grounding wire 1 is connected with a lower electrode, a plurality of mounting holes are formed in a process chamber, each mounting hole is provided with a grounding wire body 2, and the grounding wire bodies 2 are in insulating connection with the process chamber;
the number of the vacuum side grounding wires 1 is in one-to-one correspondence with the number of the grounding wire bodies 2, the other ends of the vacuum side grounding wires 1 are connected with the corresponding grounding wire bodies 2, the grounding wire bodies 2 are connected with atmosphere side grounding wires 3, one ends of the atmosphere side grounding wires 3 far away from the grounding wire bodies 2 are connected with a process cavity, the atmosphere side grounding wires 3 are connected with variable resistors 4, the resistance range of the variable resistors 4 is 0 omega-10 megaohms, the grounding wire bodies 2 are also connected with detection mechanisms 5 for detecting whether the vacuum side grounding wires 1 break, the detection mechanisms 5 are connected with control modules 6, and the control modules 6 control the sizes of the variable resistors 4 according to detection results to change the on-off states of the atmosphere side grounding wires 3;
the detection mechanism 5 comprises an impedance confirmation wire 12, one end of the impedance confirmation wire 12 is connected with the ground wire body 2, the other end of the impedance confirmation wire 12 is connected with the lower electrode, an impedance measurement assembly 13 is arranged on the impedance confirmation wire 12, and the impedance measurement assembly 13 is electrically connected with the control module 6.
The lower electrode, the vacuum side ground wire 1, the ground wire body 2, and the impedance confirmation wire 12 form a loop. After the vacuum side ground wire 1 breaks, the impedance measuring unit 13 detects the disconnection of the circuit, and a signal is transmitted back to the control module 6, and the control module 6 controls the resistance value of the variable resistor 4 corresponding to the vacuum side ground wire 1 to be increased, so that the circuit on the other side is disconnected.
Specifically, the grounding wire body 2 is composed of a flat plate 7 and a boss 8 arranged at the top of the flat plate 7, the boss 8 is embedded into the mounting hole, and a gap is reserved between the boss 8 and the mounting hole.
Specifically, the length and width of the boss 8 are smaller than those of the flat plate 7.
Specifically, the top of the platform is provided with an insulating spacer 9 for insulating the flat plate 7 from the process chamber.
Specifically, a sealing ring 10 for preventing leakage of chemical gas is arranged at the top of the insulating gasket 9.
Specifically, the flat plate 7 is provided with a connecting hole, an insulating sleeve 11 is arranged in the connecting hole, a connecting bolt penetrates through the insulating sleeve 11 to be connected with the process cavity, and the end head of the connecting bolt is abutted to the end part of the insulating sleeve 11.
One specific application of the invention is:
when all of the vacuum side ground lines 1 are not broken, the resistance value of the variable resistor 4 can be maintained at 3Ω. And after the vacuum side ground wire 1 on the left side of the lower electrode breaks one or more, the impedance measuring component 13 detects that the loop formed by the lower electrode, the vacuum side ground wire 1, the ground wire body 2 and the impedance confirming wire 12 is broken, the impedance measuring component 13 transmits a signal back to the control module 6, the control module 6 controls the resistance value of the variable resistor 4 on the right side of the lower electrode to become larger, the resistance value of the variable resistor 4 can be increased to 10 megaohms at maximum, and the variable resistor 4 corresponds to the broken vacuum side ground wire 1. When the resistance of the variable resistor 4 increases, the right circuit is equivalently disconnected, i.e., the vacuum side ground line 1 on the right side breaks. The number of the vacuum side grounding wires 1 on the left and right of the lower electrode can be balanced, so that the difference value of the side lengths of the left and right sides of the glass substrate is obviously converged when the glass substrate is coated, and the coating quality of the glass substrate is improved.
Moreover, by adjusting the variable resistor 4, the thickness of the plating film can be changed, and the problem of local overscaling of the film thickness caused by breakage of the vacuum side ground wire 1 locally in the vacuum side ground wire 1 can be avoided.
According to the invention, the variable resistor 4 and the detection mechanism 5 are arranged, so that the breaking quantity and the breaking position of the vacuum side grounding wire 1 can be timely monitored, and when the partial vacuum side grounding wire 1 breaks, a vertical horse is not required to maintain the process cavity, the period of the maintaining process cavity is prolonged, and the productivity of equipment can be improved.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that the specific embodiments described are illustrative only and not intended to limit the scope of the invention, and that equivalent modifications and variations of the invention in light of the spirit of the invention will be covered by the claims of the present invention.
Claims (6)
1. The utility model provides a plasma enhanced chemical vapor deposition's earth connection structure, includes a plurality of vacuum side earth connection (1), the one end and the bottom electrode of vacuum side earth connection (1) are connected, its characterized in that: a plurality of mounting holes are formed in the process cavity, each mounting hole is provided with a grounding wire body (2), and the grounding wire bodies (2) are in insulating connection with the process cavity;
the vacuum side grounding wires (1) are in one-to-one correspondence with the grounding wire bodies (2), the other ends of the vacuum side grounding wires (1) are connected with the corresponding grounding wire bodies (2), the grounding wire bodies (2) are connected with atmosphere side grounding wires (3), one ends, far away from the grounding wire bodies (2), of the atmosphere side grounding wires (3) are connected with a process cavity, variable resistors (4) are connected onto the atmosphere side grounding wires (3), the grounding wire bodies (2) are also connected with detection mechanisms (5) for detecting whether the vacuum side grounding wires (1) break or not, the detection mechanisms (5) are connected with control modules (6), and the control modules (6) control the sizes of the variable resistors (4) according to detection results to change the on-off states of the atmosphere side grounding wires (3);
the detection mechanism (5) comprises an impedance confirmation wire (12), one end of the impedance confirmation wire (12) is connected with the ground wire body (2), the other end of the impedance confirmation wire (12) is connected with the lower electrode, an impedance measurement assembly (13) is arranged on the impedance confirmation wire (12), and the impedance measurement assembly (13) is electrically connected with the control module (6).
2. A plasma enhanced chemical vapor deposited ground line structure as recited in claim 1, wherein: the grounding wire body (2) is composed of a flat plate (7) and a boss (8) arranged at the top of the flat plate (7), the boss (8) is embedded into the mounting hole, and a gap is reserved between the boss (8) and the mounting hole.
3. A plasma enhanced chemical vapor deposited ground line structure as defined in claim 2, wherein: the length and the width of the boss (8) are smaller than those of the flat plate (7).
4. A plasma enhanced chemical vapor deposited ground line structure as defined in claim 2, wherein: the top of the platform is provided with an insulating gasket (9) for insulating the flat plate (7) and the process cavity.
5. The plasma enhanced chemical vapor deposited ground line structure of claim 4, wherein: the top of the insulating gasket (9) is provided with a sealing ring (10) for preventing chemical gas leakage.
6. The plasma enhanced chemical vapor deposited ground line structure of claim 4, wherein: the flat plate (7) is provided with a connecting hole, an insulating sleeve (11) is arranged in the connecting hole, a connecting bolt penetrates through the insulating sleeve (11) to be connected with the process cavity, and the end head of the connecting bolt is abutted to the end part of the insulating sleeve (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310197600.0A CN116200730B (en) | 2023-03-03 | 2023-03-03 | Grounding wire structure of plasma enhanced chemical vapor deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310197600.0A CN116200730B (en) | 2023-03-03 | 2023-03-03 | Grounding wire structure of plasma enhanced chemical vapor deposition |
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| CN116200730A true CN116200730A (en) | 2023-06-02 |
| CN116200730B CN116200730B (en) | 2024-06-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195909A (en) * | 2007-11-30 | 2008-06-11 | 华南师范大学 | Direct current plasma chemical vapor deposition equipment |
| CN110042369A (en) * | 2019-03-26 | 2019-07-23 | 云谷（固安）科技有限公司 | The chamber structure of plasma enhanced chemical vapor deposition and equipment with it |
| CN113675115A (en) * | 2015-05-22 | 2021-11-19 | 应用材料公司 | Azimuth adjustable multi-zone electrostatic chuck |
| CN114134487A (en) * | 2020-09-04 | 2022-03-04 | 三星显示有限公司 | Deposition apparatus |
| CN219839763U (en) * | 2023-03-03 | 2023-10-17 | 福建华佳彩有限公司 | Grounding wire structure of plasma enhanced chemical vapor deposition |
-
2023
- 2023-03-03 CN CN202310197600.0A patent/CN116200730B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195909A (en) * | 2007-11-30 | 2008-06-11 | 华南师范大学 | Direct current plasma chemical vapor deposition equipment |
| CN113675115A (en) * | 2015-05-22 | 2021-11-19 | 应用材料公司 | Azimuth adjustable multi-zone electrostatic chuck |
| CN110042369A (en) * | 2019-03-26 | 2019-07-23 | 云谷（固安）科技有限公司 | The chamber structure of plasma enhanced chemical vapor deposition and equipment with it |
| CN114134487A (en) * | 2020-09-04 | 2022-03-04 | 三星显示有限公司 | Deposition apparatus |
| US20220076926A1 (en) * | 2020-09-04 | 2022-03-10 | Samsung Display Co., Ltd. | Deposition device apparatus |
| CN219839763U (en) * | 2023-03-03 | 2023-10-17 | 福建华佳彩有限公司 | Grounding wire structure of plasma enhanced chemical vapor deposition |
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| CN116200730B (en) | 2024-06-11 |
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