CN116190518A - PGaN epitaxial wafer with high carrier concentration, preparation method and application - Google Patents

PGaN epitaxial wafer with high carrier concentration, preparation method and application Download PDF

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CN116190518A
CN116190518A CN202310186924.4A CN202310186924A CN116190518A CN 116190518 A CN116190518 A CN 116190518A CN 202310186924 A CN202310186924 A CN 202310186924A CN 116190518 A CN116190518 A CN 116190518A
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pgan
source
atoms
layer
carrier concentration
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李京波
钱昊
汪禹
王小周
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Zhejiang Xinke Semiconductor Co Ltd
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Zhejiang Xinke Semiconductor Co Ltd
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Abstract

The application discloses a PGaN epitaxial wafer with high carrier concentration, a preparation method and application. The method comprises disposing a substrate in a MOCVD reaction chamber; introducing an Al source, a Ga source and an N source to form a low-temperature AlGaN buffer layer; forming a UGAN isolation layer on the AlGaN buffer layer; introducing a Ga source, an N source and a Mg source to form a PGaN epitaxial layer, wherein the Ga source comprises oxygen-containing TMGa and common TMGa; and increasing the flow of the Mg source to form the PGaN ohmic contact layer. Introducing an oxygen-containing Ga source, an N source and an Mg source to combine O atoms and H atoms, so as to effectively destroy the Mg-H complex; the O atoms are combined with Mg atoms, ga atoms and N atoms to form Mg-Ga-O-N defect compound which can exist in GaN stably, so that the direct band gap width of GaN is reduced, the activation energy of Mg is further reduced, the carrier concentration is improved, and the resistivity is reduced.

Description

PGaN epitaxial wafer with high carrier concentration, preparation method and application
Technical Field
The invention relates to the field of semiconductor devices, in particular to a PGaN epitaxial wafer with high carrier concentration, a preparation method and application.
Background
Gallium nitride (GaN) has the characteristics of wide band gap, high temperature resistance, radiation resistance, high critical breakdown electric field and the like, is very beneficial to power electronic devices such as Light Emitting Diodes (LEDs), field Effect Transistors (FETs), schottky diodes (SBDs) and the like, and gallium nitride (GaN) and related semiconductor alloys (such as AlGaN, inGaN and the like) have become promising materials suitable for high-power high-frequency electronic devices. An important bottleneck faced by GaN research development is the control of P-type GaN doping. For LEDs only, it is necessary to obtain good ohmic contact, reduce the device voltage, and successfully prepare a P-type GaN layer, which can provide a sufficiently high hole concentration for the active layer for electron recombination, thereby contributing to an improvement in the LED light emission intensity.
The effective P-type doping concentration of the GaN material is not high for a long time, and the P-type heavy doping cannot be realized. The main reasons for this are the following: firstly, when GaN grows by Metal Organic Chemical Vapor Deposition (MOCVD), an acceptor Mg is easy to combine with H atoms to form a neutral Mg-H complex, so that the Mg cannot effectively replace Ga and has no electric activity; secondly, N vacancies are easy to generate when GaN grows, and the N vacancies are a donor source, so that the GaN material is N-type when undoped; in addition, mg has a deep energy level in GaN materials, and generally has the shallowest energy level of about 170meV, and is more difficult to ionize at room temperature.
Therefore, only a relatively low concentration of P-type active doping is typically achieved (hole concentration of about 10 -17 cm -3 ) This greatly limits the improvement of GaN-based device performance, resulting in reduced carrier injection ratio, difficulty in P-type ohmic contact preparation, and reduced luminous efficiencyLow forward operating voltage, high power device heating and reduced reliability.
Disclosure of Invention
Aiming at least overcoming one of the problems, the invention provides a PGaN epitaxial wafer with high carrier concentration, a preparation method and application.
The technical scheme adopted by the invention is as follows:
the application provides a PGaN epitaxial wafer with high carrier concentration, which comprises: the device comprises a substrate, and a UGAN isolation layer, a PGaN epitaxial layer and a PGaN ohmic contact layer which are sequentially arranged on the substrate, wherein Mg atoms and O atoms are doped in the PGaN epitaxial layer, and Mg atoms are doped in the PGaN ohmic contact layer.
On one hand, O atoms can be combined with H atoms, so that Mg-H complex is effectively destroyed, the activation rate of Mg is improved, and the carrier concentration is increased; on the other hand, O atoms can combine with Mg atoms, ga atoms and N atoms to form Mg-Ga-O-N defect complexes, the Mg-Ga-O-N defect complexes can exist in GaN stably, the direct band gap width of GaN can be reduced by the Mg-Ga-O-N existing in GaN stably, so that the activation energy of Mg is reduced, the carrier concentration is improved, and the resistivity is reduced.
The UGAN isolation layer is used for reducing diffusion of O atoms in the dislocation and the substrate into pGaN.
Further, the substrate is a sapphire substrate, a Si substrate or a GaN substrate.
Further, when the substrate is a sapphire substrate or a Si substrate, the device further comprises an AlGaN buffer layer, wherein the AlGaN buffer layer is arranged between the substrate and the UGaN isolation layer, and the thickness of the AlGaN buffer layer is 20-30 nm.
Further, the atomic number ratio of Mg atoms to O atoms in the PGaN epitaxial layer is 20 to 100.
Further, the atomic number ratio of Mg atoms to O atoms in the PGaN epitaxial layer is 30 to 40.
Further, the thickness of the PGaN epitaxial layer is 0.5-3 mu m, the thickness of the UGAN isolation layer is 3-5 mu m, and the thickness of the PGaN ohmic contact layer is 10-50 nm.
The application also provides a preparation method of the PGaN epitaxial wafer with high carrier concentration, which comprises the following steps:
setting a substrate in an MOCVD reaction chamber, and carrying out heat treatment on the substrate;
setting the growth temperature to 550-650 ℃, and respectively introducing an Al source, a Ga source and an N source into the MOCVD reaction chamber to form a low-temperature AlGaN buffer layer on the substrate;
setting the growth temperature to 1050-1150 ℃ and forming a UGAN isolation layer on the AlGaN buffer layer;
setting the growth temperature to be 930-1000 ℃, respectively introducing a Ga source, an N source and a Mg source into the MOCVD reaction chamber, and forming a PGaN epitaxial layer on the UGAN isolation layer, wherein the Ga source comprises oxygen-containing TMGa and common TMGa;
and increasing the flow of the Mg source, and continuing to grow on the PGaN epitaxial layer to form a PGaN ohmic contact layer.
And the PGaN ohmic contact layer is formed by increasing the flow of the Mg source, so that the PGaN ohmic contact layer is conveniently formed in the subsequent manufacturing of the semiconductor photoelectric device.
In practical applications, N-type Si and P-type Mg dopants are doped simultaneously to generate high hole concentrations, and after practice, a large number of non-ionized atoms are found to remain in the lattice gaps, so that higher hole carrier concentrations and lower resistivity cannot be obtained. According to the method, an oxygen-containing Ga source, an oxygen-containing N source and an oxygen-containing Mg source are introduced into an MOCVD reaction chamber, so that O atoms and H atoms are combined, further an Mg-H complex is effectively destroyed, and the O atoms, the Mg atoms, the Ga atoms and the N atoms are combined to form an Mg-Ga-O-N defect complex which can exist in GaN stably, so that the direct band gap width of the GaN is reduced, the activation energy of Mg is further reduced, the carrier concentration is improved, and the resistivity is reduced.
When the vertical structure device containing the PGaN epitaxial wafer is manufactured, secondary annealing is needed after etching, the secondary annealing has strict requirements on the size of the annealed device, and the activation rate is low, so that the high-performance vertical device is not easy to obtain. By using the method steps of the invention, the annealing treatment is not needed, and the vertical structure device with the carrier concentration equivalent to that of the vertical device formed after secondary annealing can be obtained.
According to the invention, the PGaN carrier concentration can be greatly improved by adding one MO source, the whole manufacturing process is quick and convenient, the scheme is simple and effective, equipment transformation is not needed, and the problem that the PGaN of the buried layer structure is difficult to activate can be effectively solved, so that the method is suitable for large-scale popularization and use.
Further, when forming the PGaN epitaxial layer, the growth pressure is set to be 180-230 mbar, the total flow rate of the Ga source is 400-450 mu mol/(L.min), and the flow rate ratio of the oxygen-containing TMGa to the common TMGa is 1:1.5 to 1: 2.5; the flow rate of the Mg source is 0.5-0.8 mu mol/(L.min).
Further, when forming the PGaN epitaxial layer, the Mg source is CP2Mg, and the N source is NH 3 。
The atomic number of the doped O can be controlled by adjusting the flow ratio of the oxygen-containing TMGa to the common TMGa, and the atomic number of the doped Mg can be controlled by adjusting the flow of the CP2 Mg.
Further, the oxygen content of the oxygen-containing TMGa is 180-220 ppm, and the Mg doping concentration of the PGaN ohmic contact layer is 0.8E+20-1.2E+20 per cubic centimeter.
Further, the heat treatment of the substrate specifically includes introducing H into the MOCVD reaction chamber 2 Setting the temperature to 1000-1150 ℃ and the heat treatment time lasts for 5-8 min;
when the AlGaN buffer layer is formed, the growth pressure is 50-200 mbar, and the Al source, ga source and N source are TMAL, TMGa and NH respectively 3 。
Further, the thickness of the PGaN epitaxial layer formed by growth is 0.5-3 mu m;
the thickness of the AlGaN buffer layer formed by growth is 20-30 nm;
the thickness of the UGAN isolation layer formed by growth is 3-5 mu m;
the thickness of the PGaN ohmic contact layer formed by growth is 10-50 nm.
Further, the substrate is a sapphire substrate.
The application also provides a semiconductor photoelectric device, which comprises the PGaN epitaxial wafer with high carrier concentration or the PGaN epitaxial wafer prepared by the preparation method of the PGaN epitaxial wafer with high carrier concentration.
The semiconductor photoelectric device takes the PGaN epitaxial wafer with high carrier concentration as a GaN base, so that the carrier injection ratio is improved, the P-type ohmic contact preparation is easy, the luminous efficiency is improved, the high-power device heats and the reliability is improved.
The beneficial effects of the invention are as follows:
(1) On one hand, O atoms can be combined with H atoms, so that Mg-H complex is effectively destroyed, the activation rate of Mg is improved, and the carrier concentration is increased; on the other hand, O atoms can combine with Mg atoms, ga atoms and N atoms to form Mg-Ga-O-N defect complexes, the Mg-Ga-O-N defect complexes can exist in GaN stably, the direct band gap width of GaN can be reduced by the Mg-Ga-O-N existing in GaN stably, so that the activation energy of Mg is reduced, the carrier concentration is improved, and the resistivity is reduced.
(2) By using the method steps of the invention, the annealing treatment is not needed, and the vertical structure device with the carrier concentration equivalent to that of the vertical device formed after secondary annealing can be obtained.
(3) And the PGaN ohmic contact layer is formed by increasing the flow of the Mg source, so that the PGaN ohmic contact layer is conveniently formed in the subsequent manufacturing of the semiconductor photoelectric device.
(4) According to the invention, the PGaN carrier concentration can be greatly improved by adding one MO source, the whole manufacturing process is quick and convenient, the scheme is simple and effective, equipment transformation is not needed, and the problem that the PGaN of the buried layer structure is difficult to activate can be effectively solved, so that the method is suitable for large-scale popularization and use.
(5) The semiconductor photoelectric device takes the PGaN epitaxial wafer with high carrier concentration as a GaN base, so that the carrier injection ratio is improved, the P-type ohmic contact preparation is easy, the luminous efficiency is improved, and the reliability of the high-power device is improved.
Drawings
Fig. 1 is a schematic structural diagram of a PGaN epitaxial wafer with high carrier concentration in a front view direction according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing the comparison of the carrier concentration of a device obtained by the Mg/O co-doping preparation method according to the embodiment of the invention and the existing annealing scheme;
FIG. 3 is a schematic diagram showing the relationship between the Mg/O ratio and the carrier concentration when the Mg concentration is 5E+18.
The reference numerals in the drawings are as follows:
1. a substrate; 2. an AlGaN buffer layer; 3. a UGAN isolation layer; 4. a PGaN epitaxial layer; 5. PGaN ohmic contact layer.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1, the present application provides a PGaN epitaxial wafer with high carrier concentration, including: the substrate 1, and the UGAN isolation layer 3, the PGaN epitaxial layer 4 and the PGaN ohmic contact layer 5 which are sequentially arranged on the substrate 1, wherein Mg atoms and O atoms are doped in the PGaN epitaxial layer 4, and Mg atoms are doped in the PGaN ohmic contact layer 5.
On one hand, O atoms can be combined with H atoms, so that Mg-H complex is effectively destroyed, the activation rate of Mg is improved, and the carrier concentration is increased; on the other hand, O atoms can combine with Mg atoms, ga atoms and N atoms to form Mg-Ga-O-N defect complexes, the Mg-Ga-O-N defect complexes can exist in GaN stably, the direct band gap width of GaN can be reduced by the Mg-Ga-O-N existing in GaN stably, so that the activation energy of Mg is reduced, the carrier concentration is improved, and the resistivity is reduced.
The UGaN spacer layer 3 serves to reduce the diffusion of O atoms in the substrate into pGaN.
In this embodiment, the substrate 1 is a sapphire substrate or a Si substrate, the epitaxial wafer further includes an AlGaN buffer layer 2, the AlGaN buffer layer 2 is disposed between the substrate 1 and the UGaN isolation layer 3, and the thickness of the AlGaN buffer layer 2 is 20-30 nm.
In other embodiments, the substrate 1 is a GaN substrate.
In this embodiment, the atomic number ratio of Mg atoms to O atoms in the PGaN epitaxial layer 4 is 30 to 40.
As shown in fig. 3, when the atomic number ratio of Mg atoms to O atoms in the PGaN epitaxial layer is 30 to 40, the PGaN epitaxial wafer has a higher carrier concentration. When the atomic number ratio of Mg atoms to O atoms is 35, the carrier concentration of the PGaN epitaxial wafer is highest.
In this embodiment, the thickness of the PGaN epitaxial layer 4 is 1 μm, and the thickness of the AlGaN buffer layer 2 is 20 to 30nm; the thickness of the UGAN isolation layer 3 is 3-5 μm, and the thickness of the PGaN ohmic contact layer 5 is 20nm.
The application also provides a preparation method of the PGaN epitaxial wafer with high carrier concentration, which comprises the following steps:
setting a substrate in an MOCVD reaction chamber, and performing heat treatment on the substrate;
setting the growth temperature to 550-650 ℃, and respectively introducing an Al source, a Ga source and an N source into the MOCVD reaction chamber to form a low-temperature AlGaN buffer layer on the substrate;
setting the growth temperature to 1050-1150 ℃ and forming a UGAN isolation layer on the AlGaN buffer layer;
setting the growth temperature to be 930-1000 ℃, respectively introducing a Ga source, an N source and a Mg source into the MOCVD reaction chamber, and forming a PGaN epitaxial layer on the UGAN isolation layer, wherein the Ga source comprises oxygen-containing TMGa and common TMGa;
and increasing the flow of the Mg source, and continuing to grow on the PGaN epitaxial layer to form the PGaN ohmic contact layer.
And the PGaN ohmic contact layer is formed by increasing the flow of the Mg source, so that the PGaN ohmic contact layer is conveniently formed in the subsequent manufacturing of the semiconductor photoelectric device.
In practical applications, N-type Si and P-type Mg dopants are doped simultaneously to generate high hole concentrations, and after practice, a large number of non-ionized atoms are found to remain in the lattice gaps, so that higher hole carrier concentrations and lower resistivity cannot be obtained. According to the method, an oxygen-containing Ga source, an oxygen-containing N source and an oxygen-containing Mg source are introduced into an MOCVD reaction chamber, so that O atoms and H atoms are combined, further an Mg-H complex is effectively destroyed, and the O atoms, the Mg atoms, the Ga atoms and the N atoms are combined to form an Mg-Ga-O-N defect complex which can exist in GaN stably, so that the direct band gap width of the GaN is reduced, the activation energy of Mg is further reduced, the carrier concentration is improved, and the resistivity is reduced.
When the vertical structure device containing the PGaN epitaxial wafer is manufactured, secondary annealing is needed after etching, the secondary annealing has strict requirements on the size of the annealed device, and the activation rate is low, so that the high-performance vertical device is not easy to obtain. As shown in fig. 2, using the method steps of the present invention, no annealing treatment is required, and a vertical structure device having a carrier concentration comparable to that of a vertical device formed after the secondary annealing can be obtained.
According to the invention, the PGaN carrier concentration can be greatly improved by adding one MO source, the whole manufacturing process is quick and convenient, the scheme is simple and effective, equipment transformation is not needed, and the problem that the PGaN of the buried layer structure is difficult to activate can be effectively solved, so that the method is suitable for large-scale popularization and use.
In this example, when forming the PGaN epitaxial layer, the growth pressure was set to 200mbar, the total flow rate of ga source was 400 to 450 μmol/(l·min), and the flow rate ratio of oxygen-containing TMGa to ordinary TMGa was 1:2; the flow rate of the Mg source is 0.5-0.8 mu mol/(L.min).
In this embodiment, when forming the PGaN epitaxial layer, the source of Mg is CP2Mg and the source of N is NH 3 。
The atomic number of the doped O can be controlled by adjusting the flow ratio of the oxygen-containing TMGa to the common TMGa, and the atomic number of the doped Mg can be controlled by adjusting the flow of the CP2 Mg.
In this example, the oxygen content of the oxygen-containing TMGa is 200ppm and the Mg doping concentration of the PGaN ohmic contact layer is 1E+20 per cubic centimeter.
In this embodiment, the heat treatment of the substrate specifically includes introducing H into the MOCVD reaction chamber 2 Setting the temperature to 1000-1150 ℃ and the heat treatment time lasts for 5-8 min;
when the AlGaN buffer layer is formed, the growth pressure is 50-200 mbar, and the Al source, ga source and N source are TMAL, TMGa and NH respectively 3 。
In this embodiment, the thickness of the grown PGaN epitaxial layer is 1 μm;
the thickness of the AlGaN buffer layer formed by growth is 20-30 nm;
the thickness of the UGAN isolation layer formed by growth is 3-5 mu m;
the thickness of the PGaN ohmic contact layer formed by growth is 20nm.
In this embodiment, the substrate is a sapphire substrate.
The application also provides a semiconductor photoelectric device, which comprises the PGaN epitaxial wafer with high carrier concentration or the PGaN epitaxial wafer prepared by the preparation method of the PGaN epitaxial wafer with high carrier concentration.
The semiconductor photoelectric device takes the PGaN epitaxial wafer with high carrier concentration as a GaN base, so that the carrier injection ratio is improved, the P-type ohmic contact preparation is easy, the luminous efficiency is improved, and the reliability of the high-power device is improved.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover all equivalent structures as modifications within the scope of the invention, either directly or indirectly, as may be contemplated by the present invention.

Claims (10)

1. The utility model provides a PGaN epitaxial wafer of high carrier concentration which characterized in that includes: the device comprises a substrate, and a UGAN isolation layer, a PGaN epitaxial layer and a PGaN ohmic contact layer which are sequentially arranged on the substrate, wherein Mg atoms and O atoms are doped in the PGaN epitaxial layer, and Mg atoms are doped in the PGaN ohmic contact layer.
2. The PGaN epitaxial wafer of claim 1 wherein the ratio of Mg atoms to O atoms in the PGaN epitaxial layer is 20-100.
3. The PGaN epitaxial wafer of claim 2 wherein the ratio of Mg atoms to O atoms in the PGaN epitaxial layer is 30-40.
4. The PGaN epitaxial wafer of claim 1 wherein the PGaN epitaxial layer has a thickness of 0.5-3 μm, the UGaN isolation layer has a thickness of 3-5 μm, and the PGaN ohmic contact layer has a thickness of 10-50 nm.
5. The preparation method of the PGaN epitaxial wafer with high carrier concentration is characterized by comprising the following steps of:
setting a substrate in an MOCVD reaction chamber, and carrying out heat treatment on the substrate;
setting the growth temperature to 550-650 ℃, and respectively introducing an Al source, a Ga source and an N source into the MOCVD reaction chamber to form a low-temperature AlGaN buffer layer on the substrate;
setting the growth temperature to 1050-1150 ℃ and forming a UGAN isolation layer on the AlGaN buffer layer;
setting the growth temperature to be 930-1000 ℃, respectively introducing a Ga source, an N source and a Mg source into the MOCVD reaction chamber, and forming a PGaN epitaxial layer on the UGAN isolation layer, wherein the Ga source comprises oxygen-containing TMGa and common TMGa;
and increasing the flow of the Mg source, and continuing to grow on the PGaN epitaxial layer to form a PGaN ohmic contact layer.
6. The method for preparing a PGaN epitaxial wafer with high carrier concentration according to claim 5, wherein the growth pressure is set to 180-230 mbar when forming the PGaN epitaxial layer, the total flow rate of the Ga source is 400-450 μmol/(l·min), and the flow ratio of the oxygen-containing TMGa to the ordinary TMGa is 1:1.5 to 1: 2.5; the flow rate of the Mg source is 0.5-0.8 mu mol/(L.min).
7. The method for preparing a PGaN epitaxial wafer with high carrier concentration according to claim 5, wherein the oxygen content of the oxygen-containing TMGa is 180-220 ppm, and the Mg doping concentration of the PGaN ohmic contact layer is 0.8e+20-1.2e+20 per cubic centimeter.
8. The method for preparing a high carrier concentration PGaN epitaxial wafer of claim 5, wherein the heat treatment of the substrate comprises introducing H into a MOCVD reaction chamber 2 Setting the temperature to 1000-1150 ℃ and the heat treatment time lasts for 5-8 min;
when the AlGaN buffer layer is formed, the growth pressure is 50-200 mbar, and the Al source, ga source and N source are TMAL, TMGa and NH respectively 3 。
9. The method for preparing a high carrier concentration PGaN epitaxial wafer according to claim 5, wherein the thickness of the grown PGaN epitaxial layer is 0.5-3 μm;
the thickness of the AlGaN buffer layer formed by growth is 20-30 nm;
the thickness of the UGAN isolation layer formed by growth is 3-5 mu m;
the thickness of the PGaN ohmic contact layer formed by growth is 10-50 nm.
10. A semiconductor photoelectric device, characterized by comprising the PGaN epitaxial wafer with high carrier concentration according to any one of claims 1 to 4, or comprising the PGaN epitaxial wafer prepared by the preparation method of the PGaN epitaxial wafer with high carrier concentration according to any one of claims 5 to 9.
CN202310186924.4A 2023-02-22 2023-02-22 PGaN epitaxial wafer with high carrier concentration, preparation method and application Pending CN116190518A (en)

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