CN116190296A - Temporary substrate and transfer method of light-emitting element - Google Patents

Temporary substrate and transfer method of light-emitting element Download PDF

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Publication number
CN116190296A
CN116190296A CN202111421641.0A CN202111421641A CN116190296A CN 116190296 A CN116190296 A CN 116190296A CN 202111421641 A CN202111421641 A CN 202111421641A CN 116190296 A CN116190296 A CN 116190296A
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China
Prior art keywords
deformation
layer
emitting element
substrate
light
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CN202111421641.0A
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Inventor
谭文健
熊自阳
朱平
刘娜
王兴发
胡鹏君
张国涛
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Chengdu Vistar Optoelectronics Co Ltd
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Chengdu Vistar Optoelectronics Co Ltd
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Priority to CN202111421641.0A priority Critical patent/CN116190296A/en
Publication of CN116190296A publication Critical patent/CN116190296A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application discloses interim base plate, interim base plate includes: a substrate; the deformation layer is arranged on one side of the substrate and can deform under the action of external force; the bonding adhesive layer is at least partially covered on one side of the deformation layer away from the substrate, and can deform under the deformation action of the deformation layer; the temporary substrate is used for being matched with at least one light-emitting element, the light-emitting element is at least partially embedded in the bonding adhesive layer, the deformation layer deforms under the action of external force, the bonding adhesive layer deforms under the deformation action of the deformation layer, and the depth of the at least one light-emitting element embedded in the bonding adhesive layer is reduced. By the mode, the adhesion force between the light-emitting element and the temporary substrate can be reduced, and the pick-up yield is improved.

Description

Temporary substrate and transfer method of light-emitting element
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a temporary substrate and a method for transferring a light emitting element.
Background
The miniaturized LED (Micro LED) chip display technology is a novel display technology with an array formed by micron-sized LED luminous pixels, has the advantages of high efficiency, short response time, long service life, wide working range and the like, and is widely applied to ultra-high density Micro LED display terminal products such as televisions, augmented reality (AR/VR), vehicle-mounted display, wearable equipment, smart phones and the like.
In the prior art, when the light emitting element is bonded from the growth substrate to the temporary substrate, a larger adhesion force between the temporary substrate and the light emitting element is generally required to ensure that the LED chip is completely bonded to the temporary substrate, and in the picking process, a larger adhesion force between the transfer assembly and the light emitting element is required to ensure the picking yield.
However, in the prior art, the pick-up and transfer of the miniaturized LED chip is one of the core technical problems faced by the miniaturized LED industry at the present stage, and there may be a problem that the pick-up and binding process window of the light emitting element is smaller and the process yield is lower due to the insignificant gradient difference of the adhesion force in the pick-up and transfer process.
Disclosure of Invention
The technical problem that this application mainly solves is to provide a temporary substrate and light-emitting component's transfer method, can reduce the adhesion between light-emitting component and the temporary substrate, improves and picks up the yield.
In order to solve the technical problems, one technical scheme adopted by the application is as follows: provided is a temporary substrate including: a substrate; the deformation layer is arranged on one side of the substrate and can deform under the action of external force; and the bonding adhesive layer at least partially covers one side of the deformation layer away from the substrate, and can deform under the deformation action of the deformation layer.
Preferably, the deformation layer comprises a piezoelectric material, the temporary substrate further comprises a deformation control circuit layer, the deformation control circuit layer is arranged between the deformation layer and the substrate, and the deformation control circuit layer controls the deformation layer to deform.
Preferably, the deformation layer package includes a plurality of deformation units, the deformation control circuit layer includes a plurality of deformation control subcircuits, the deformation control subcircuit control deformation unit takes place deformation.
Preferably, the deformation layer comprises a plurality of deformation units, gaps are arranged between adjacent deformation units, and the bonding adhesive layer fills the gaps.
Preferably, the deformation layer comprises a plurality of deformation units, and the bonding adhesive layer comprises a plurality of bonding adhesive blocks, and the bonding adhesive blocks at least cover one side, far away from the substrate, of the deformation units.
Preferably, the deformation layer comprises a photo-deformable material or a thermo-deformable material.
Preferably, the temporary substrate is configured to cooperate with at least one light emitting element, the light emitting element is at least partially embedded in the bonding adhesive layer, the deformation layer deforms under the action of external force, the bonding adhesive layer deforms under the deformation action of the deformation layer, and the depth of the at least one light emitting element embedded in the bonding adhesive layer is reduced.
Preferably, the external force may be voltage, light or temperature.
In order to solve the technical problems, another technical scheme adopted by the application is as follows: there is provided a transfer method of a light emitting element, comprising the steps of:
s101: providing at least one light-emitting element held on an epitaxial wafer, wherein the at least one light-emitting element is arranged on one side of the epitaxial wafer;
s102: providing a temporary substrate according to any one of claims 1 to 8, bonding the light emitting elements at least partially to the bonding glue layer of the temporary substrate, wherein the at least one light emitting element is located at a side of the deformation layer remote from the substrate;
s103: peeling the epitaxial wafer;
s104: providing an external force to deform the deformation layer to a side far away from the substrate, wherein the bonding adhesive layer deforms under the deformation action of the deformation layer, and the depth of the at least one light-emitting element embedded into the bonding adhesive layer is reduced;
s105: transferring the at least one light emitting element with a transfer assembly;
s106: the transfer assembly separates the at least one light emitting element from the temporary substrate.
Preferably, in step S104, the external force may be voltage, light or temperature.
The beneficial effects of this application are: through the above design scheme, because the deformation effect of deformation layer produces the positive pressure along range upon range of direction to the bonding glue film around for the luminous element who is fixed in the bonding glue film is jacked to keeping away from substrate one side direction, thereby has effectively reduced the degree of depth that luminous element imbeds the bonding glue film, has reduced the adhesion between luminous element and the interim base plate, makes luminous element possess bigger process window at the in-process that follow-up transfer was picked up, effectively improves the pick up yield.
Drawings
Fig. 1 is a schematic structural view of a temporary substrate according to a first embodiment of the present application;
fig. 2 is a schematic structural view of a temporary substrate according to a second embodiment of the present application;
FIG. 3 is a schematic view of the temporary substrate shown in FIG. 2 after being mated with a light emitting device;
fig. 4 is a schematic structural view of a temporary substrate according to a third embodiment of the present application;
fig. 5 is a schematic structural view of a temporary substrate according to a fourth embodiment of the present application;
FIG. 6 is a schematic flow chart of a method for transferring a light emitting device according to the present application;
fig. 7 is a schematic diagram of the structure corresponding to each step shown in fig. 6.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a temporary substrate according to a first embodiment of the present application. The temporary substrate 100 provided in the first embodiment of the present application includes a substrate 10, a deformation layer 20, a bonding adhesive layer 30, and a deformation control circuit layer 40 located between the deformation layer 20 and the substrate 10. The substrate 10 is a basic structure of the temporary substrate 100, and is a support carrier for other structures in the temporary substrate 100, and may be made of glass or metal. Specifically, the deformation layer 20 is disposed on one side of the substrate 10, and the deformation control circuit layer 40 is disposed between the deformation layer 20 and the substrate 10. The deformation control circuit layer 40 includes a plurality of deformation control sub-circuits 401, and the deformation layer 20 includes a plurality of deformation units 201, and one deformation control sub-circuit 401 is electrically connected to one deformation unit 201. The bonding adhesive layer 30 coats the deformation units 201, specifically, the bonding adhesive layer 30 is stacked on one side of the deformation layer 20 away from the substrate 10, and the bonding adhesive layer 30 coats each deformation unit 201. The position of each deformation unit 201 corresponds to the position of each light emitting element (not shown), specifically, the bonding adhesive layer 30 located on the side of one deformation unit 201 facing away from the substrate 10 is used for fixing one light emitting element, and the orthographic projection of the deformation unit 201 on the substrate 10 covers the orthographic projection of the light emitting element at the corresponding position on the substrate 10. In other words, the deformation units 201 are arranged in one-to-one correspondence with the light emitting elements, and the design manner can ensure that the whole light emitting element is completely jacked up from the bonding adhesive layer 30 by the deformation units 201, and effectively ensure the effect that the deformation of the deformation units 201 promotes the adhesion between the light emitting element and the bonding adhesive layer 30 to be reduced.
In this embodiment, the deformation units 201 are in one-to-one correspondence with the positions of the light emitting elements, and the deformation units 201 are utilized to realize independent control of each light emitting element, so that the deformation units 201 corresponding to the light emitting elements to be transferred can be controlled to deform according to actual needs in the subsequent transfer process, thereby realizing selective pickup and transfer.
The deformation layer 20 may be formed on the side of the deformation control circuit layer 40 away from the substrate 10 in a stacked manner, and the deformation unit 201 may be deformed along the stacking direction X from the substrate 10 to the deformation layer 20, i.e., the thickness of the deformation unit 201 may be increased. Specifically, the deformation unit 201 includes a piezoelectric material, and further, the deformation unit 201 is formed of the piezoelectric material. The deformation control circuit layer 40 is utilized to provide voltage for the deformation unit 201, so that the deformation unit 201 is promoted to deform; meanwhile, the plurality of deformation units 201 are independently controlled by the plurality of deformation control sub-circuits 401, so that the selective pickup of the light emitting element is realized.
In this embodiment, the deformation unit 201 is formed of a piezoelectric material, where the piezoelectric material refers to a material that generates an inverse voltage effect under the action of a voltage, that is, when an electric field is applied in the polarization direction of the material, such material deforms in a certain direction. Specifically, the piezoelectric material may include an organic piezoelectric material such as polyvinylidene fluoride (PVDF), and an inorganic piezoelectric material such as barium titanate BT, lead zirconate titanate PZT, modified lead zirconate titanate, lead metaniobate, lead barium lithium niobate PBLN, modified lead titanate PT, and the like.
In addition, the bonding adhesive layer 30 is stacked on one side of the deformation layer 20 away from the substrate 10, and the bonding adhesive layer 30 is coated on each deformation unit 201, specifically, the bonding adhesive layer 30 may be coated on each deformation unit 201 by spin coating. It should be noted that, the bonding adhesive layer 30 has high adhesion, and can be used for fixing a light emitting element (not shown); the bonding adhesive layer 30 further has a certain deformation capability, and can deform under the action of an external force, when the deformation unit 201 deforms to a side far away from the substrate 10, the bonding adhesive layer 30 also deforms under the deformation action of the deformation unit 201, so that the light-emitting element is ejected from the bonding adhesive layer 30, and the depth of the light-emitting element embedded into the bonding adhesive layer 30 is reduced. In this embodiment, the bonding adhesive layer 30 covers all the deformation units 201 and fills the gaps between adjacent deformation units 201, i.e. the bonding adhesive layer 30 completely wraps the deformation units 201 inside, so as to protect the deformation units 201 and is not easily affected by the external environment.
Through the above embodiment, due to the deformation of the deformation unit 201, the surrounding bonding adhesive layer 30 is subjected to positive pressure along the stacking direction X, so that the light emitting element fixed on the bonding adhesive layer 30 is lifted along the direction away from the substrate 10, thereby effectively reducing the depth of the light emitting element embedded into the bonding adhesive layer 30, reducing the adhesion between the light emitting element and the temporary substrate 100, and enabling the light emitting element to have a larger process window in the subsequent transferring and picking process, and effectively improving the picking yield.
The orthographic projection of the deformation unit 201 on the substrate 10 covers the orthographic projection of at least one pin of the light emitting element at the corresponding position on the substrate 10. In other embodiments, each light emitting element includes two pins embedded in the bonding adhesive layer 30, and each light emitting element is disposed corresponding to two deformation units 201, and the orthographic projections of the two deformation units 201 on the substrate 10 cover the orthographic projections of the two pins of the light emitting element at corresponding positions on the substrate 10. Through the above embodiment, the two deformation units 201 are utilized to respectively adjust the embedding depth of the two pins of the same light-emitting element in the bonding adhesive layer 30, so as to effectively improve the adjustment precision and realize the angle adjustment of the light-emitting element. The orthographic projection of the deformation unit 201 on the substrate 10 only covers the orthographic projection of one pin of the light-emitting element at the corresponding position on the substrate 10, and the design manner can also reduce the embedding depth of the pin of the light-emitting element in the bonding adhesive layer 30 and reduce the adhesion between the light-emitting element and the bonding adhesive layer 30.
Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a temporary substrate according to a second embodiment of the present application; fig. 3 is a schematic view of the temporary substrate shown in fig. 2 and the light emitting element 2002 after being mated. In this embodiment, the bonding adhesive layer includes a plurality of bonding adhesive blocks 301, a gap is formed between adjacent bonding adhesive blocks 301, and one deformation unit 201 is covered by one bonding adhesive block 301. By the above embodiment, the coverage area of the bonding adhesive layer can be reduced as much as possible, so that the light emitting element 2002 is more easily lifted up in the deformation process of the deformation unit 201. Specifically, the bonding glue block 301 may be made of various materials, such as heat sensitive glue, polydimethylsiloxane (PDMS), and the like.
In addition, the deformation layer mentioned in the application can also include a photoinduced deformation material or a thermally induced deformation material, and the deformation material can deform the deformation unit under the action of illumination or temperature. In a specific implementation scenario, a laser source is arranged on one side of the substrate, which is far away from the light-emitting element, and a laser beam is utilized to irradiate the photoinduced deformation material or the thermally deformed material through the substrate, so that the photoinduced deformation material deforms along the stacking direction X under the action of illumination, or the temperature of the thermally deformed material rises under the action of illumination, so that the photoinduced deformation material deforms along the stacking direction X. The design mode is simple in structure, and the light-emitting element can be jacked up from the bonding adhesive layer by utilizing the deformation principle, so that the embedding depth of the light-emitting element is reduced.
Specifically, referring to fig. 4, fig. 4 is a schematic structural diagram of a temporary substrate according to a third embodiment of the present application. In the present embodiment, the deformation layer 20 is stacked between the substrate 10 and the bonding adhesive layer 30, and entirely covers one side surface of the substrate 10. In a specific implementation scenario, the material of the deformation layer 20 may be any one of a photo-deformable material and a thermo-deformable material. In the design mode, the deformation layer 20 adopts a whole-layer structure, the structure is simple, all the light-emitting elements are controlled to be jacked up simultaneously by the deformation layer 20, the depth of embedding all the light-emitting elements into the bonding adhesive layer 30 is reduced, and the pick-up efficiency is improved.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a temporary substrate according to a fourth embodiment of the present application. In this embodiment, the deformation layer includes a plurality of deformation units 201, the deformation units 201 are disposed between the substrate 10 and the bonding adhesive layer 30, and at least part of the deformation units 201 is covered by the bonding adhesive layer 30. In a specific implementation scenario, the material of the deformation unit 201 may be any one of a photo-deformable material and a thermo-deformable material. In this design mode, deformation unit 201 adopts the cubic structure for the luminous element that corresponds the deformation unit 201 and set up is more easily jacked at deformation unit 201's deformation in-process, reduces the degree of depth that luminous element imbeds bonding glue film 30, improves and picks up efficiency.
Referring to fig. 6 and fig. 7 together, fig. 6 is a flow chart of a transferring method of a light emitting device according to the present application, and fig. 7 is a structural diagram corresponding to each step in fig. 6. The transfer method of the light-emitting element mainly comprises the following steps:
s101: a plurality of light emitting elements 2002 held in the epitaxial wafer 200 are provided, wherein the plurality of light emitting elements 2002 are disposed on one side of the epitaxial wafer 200.
Specifically, referring to fig. 7 (a), a sapphire substrate is generally selected as the epitaxial wafer 200, and a plurality of light emitting elements 2002 are disposed on one side of the epitaxial wafer 200.
S102: providing a temporary substrate 100, wherein the temporary substrate 100 comprises a substrate 10, a patterned deformation layer 20 arranged on one side of the substrate 10, and a patterned deformation control circuit layer 40 paved between the deformation layer 20 and the substrate 10; wherein the deformation layer 20 includes a plurality of deformation units 201, and the deformation units 201 are formed of piezoelectric materials; and spin-coating a bonding material required for bonding on one side of the deformation unit far away from the substrate to form a bonding adhesive layer 30, wherein the bonding adhesive layer 30 coats the deformation unit 201 and fills a gap between adjacent deformation units 201, and pins of the light-emitting element 2002 are at least partially bonded on the bonding adhesive layer 30 right above the deformation units 201 through accurate alignment.
Specifically, referring to fig. 7 (b), the temporary substrate 100 is used to provide support for the light emitting element 2002 in the peeling step of the light emitting element 2002 and the epitaxial wafer 200, so as to reduce the risk of damaging the light emitting element 2002 in the peeling step as much as possible. Note that, the structure of the temporary substrate 100 in this embodiment is the same as the structure of the temporary substrate 100 in the first embodiment, and therefore, the structure of the temporary substrate 100 will not be described here. The light emitting device 2002 on the epitaxial wafer 200 is pressed together with the bonding adhesive layer 30, so that two leads (not labeled) of the light emitting device 2002 are at least partially embedded in the bonding adhesive layer 30.
S103: the epitaxial wafer 200 on the light emitting element 2002 is peeled off by laser energy, so that the light emitting element 2002 falls into the position corresponding to the temporary substrate 100, thereby completing the whole bonding process.
Specifically, referring to fig. 7 (c), two leads of the light emitting device 2002 are embedded in the bonding adhesive layer 30 of the temporary substrate 100, and the epitaxial wafer 200 is separated from the light emitting device 2002.
S104: the deformation control circuit layer 40 is externally connected with voltage, so that the deformation unit 201 of the deformation layer 20 deforms towards the side far away from the substrate 10, and the depth of the light-emitting element 2002 embedded into the bonding adhesive layer 30 is reduced under the deformation action of the deformation unit 201.
Specifically, referring to fig. 7 (d), when the deformation unit 201 receives a voltage, an inverse piezoelectric effect is generated, so that deformation occurs, the bonding adhesive layer 30 deforms under the deformation action of the deformation unit 201, and the deformed deformation unit 201 has an upward pressure on the light-emitting element 2002, so that the light-emitting element 2002 is lifted up by 1um to 2um, and the depth of the light-emitting element 2002 sunk into the bonding adhesive layer 30 is kept about 1 um; alternatively, the bonding adhesive layer 30 is deformed under the deformation action of the deformation unit 201, and the depth of the light emitting element 2002 embedded in the bonding adhesive layer 30 is reduced under the deformation action of the bonding adhesive layer 30. By such design, the bonding depth is reduced, the bonding force between the light emitting element 2002 and the temporary substrate 100 is greatly reduced, and meanwhile, the light emitting element 2002 is embedded into the bonding adhesive layer 30 and no position deviation occurs.
S105: the plurality of light emitting elements 2002 are transferred using the transfer assembly 300.
Specifically, referring to fig. 7 (e), the transfer assembly 300 includes a transfer substrate 3001 and a plurality of transfer units 3002 connected to the transfer substrate 3001, wherein the plurality of transfer units 3002 are disposed in one-to-one correspondence with the plurality of light emitting elements 2002, and the plurality of transfer units 3002 accurately pick up each light emitting element 2002 to be transferred.
S106: the transfer member 300 separates the plurality of light emitting elements 2002 from the temporary substrate 100.
Specifically, please refer to fig. 7 (f).
Through the above embodiment, due to the deformation effect of the deformation unit 201, the deformation unit 201 generates a positive pressure along the stacking direction X on the bonding glue layer 30 around the deformation unit 201, so that the light emitting element 2002 fixed on the bonding glue layer 30 is lifted up in a direction away from the substrate 10, thereby effectively reducing the depth of the light emitting element 2002 embedded into the bonding glue layer 30, reducing the adhesion between the light emitting element 2002 and the temporary substrate 100, enabling the light emitting element 2002 to have a larger process window in the transferring and picking process, and effectively improving the picking yield in the transferring process.
Further, the deformation layer 20 includes a plurality of deformation units 201, and a gap is formed between adjacent deformation units 201, and a step may be added before the step S104 is performed: the bonding adhesive layer 30 located in the gap between the adjacent two deformation units 201 is removed. Specifically, the bonding adhesive layer 30 located in the middle of the deformation unit 201 may be removed by using an etching method, so that the contact area between the bonding adhesive layer 30 and the substrate 10 is reduced, so that the light-emitting element 2002 is more easily jacked up, which is beneficial to further reducing the binding force between the light-emitting element 2002 and the bonding adhesive layer 30 and improving the pick-up yield.
Further, in the embodiment shown in fig. 6 and 7, the deformation unit 201 is formed of a piezoelectric material; the temporary substrate 100 further includes a deformation control circuit layer 40, wherein the deformation control circuit layer 40 includes a plurality of deformation control sub-circuits (not labeled), and one deformation control sub-circuit is electrically connected to one deformation unit 201. Specifically, the step S104 includes:
s201: the plurality of deformation control sub-circuits are electrically connected to an external circuit (not shown).
Specifically, the external circuit comprises a plurality of external sub-circuits, one external sub-circuit is electrically connected with one deformation control sub-circuit, and the deformation control sub-circuit is independently controlled in the mode.
S202: the voltage value of the external circuit is controlled to control the deformation amount of the deformation unit 201 corresponding to the light emitting element 2002.
Specifically, the deformation amount of the deformation unit 201 is adjusted by the voltage of the external circuit, and the larger the voltage value is, the larger the deformation amount is. Optionally, the deformation range of the deformation unit 201 is controlled within 1-2 micrometers, and the embedding depth of the light-emitting element 2002 and the bonding adhesive layer 30 is kept about 1 micrometer, so that the embedding depth of the light-emitting element 2002 and the bonding adhesive layer 30 can be greatly reduced, the bonding force between the light-emitting element 2002 and the bonding adhesive layer 30 is reduced, and the light-emitting element 2002 is prevented from being shifted in position in the bonding adhesive layer 30.
Through the above embodiment, independent control of the plurality of deformation units 201 is achieved by using the plurality of deformation control sub-circuits, thereby achieving selective pickup of the plurality of light emitting elements 2002 during transfer.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application or other related technical fields are included in the scope of the patent application.

Claims (10)

1. A temporary substrate, the temporary substrate comprising:
a substrate;
the deformation layer is arranged on one side of the substrate and can deform under the action of external force;
and the bonding adhesive layer at least partially covers one side of the deformation layer away from the substrate, and can deform under the deformation action of the deformation layer.
2. The temporary substrate of claim 1, wherein the deformation layer comprises a piezoelectric material, the temporary substrate further comprising a deformation control circuit layer disposed between the deformation layer and the substrate, the deformation control circuit layer controlling deformation of the deformation layer.
3. The temporary substrate of claim 2, wherein the deformation layer package comprises a plurality of deformation units, and the deformation control circuit layer comprises a plurality of deformation control sub-circuits, the deformation control sub-circuits controlling the deformation units to deform.
4. The temporary substrate of claim 1, wherein the deformation layer comprises a plurality of deformation units, wherein gaps are formed between adjacent deformation units, and wherein the bonding adhesive layer fills the gaps.
5. The temporary substrate of claim 1, wherein the deformation layer comprises a plurality of deformation units, and the bonding glue layer comprises a plurality of bonding glue pieces, the bonding glue pieces covering at least a side of the deformation units remote from the substrate.
6. The temporary substrate of claim 1, wherein the deformation layer comprises a photo-deformable material or a thermo-deformable material.
7. The temporary substrate of claim 1, wherein the temporary substrate is configured to cooperate with at least one light-emitting element, the light-emitting element being at least partially embedded within the bonding glue layer, the deformation layer being configured to deform under the application of the external force, the bonding glue layer being configured to deform under the application of the deformation layer, the at least one light-emitting element being embedded within the bonding glue layer to a reduced depth.
8. The temporary substrate of claim 1, wherein the external force is a voltage, light, or temperature.
9. A method of transferring a light emitting element, comprising the steps of:
s101: providing at least one light-emitting element held on an epitaxial wafer, wherein the at least one light-emitting element is arranged on one side of the epitaxial wafer;
s102: providing a temporary substrate according to any one of claims 1 to 8, bonding the light emitting elements at least partially to the bonding glue layer of the temporary substrate, wherein the at least one light emitting element is located at a side of the deformation layer remote from the substrate;
s103: peeling the epitaxial wafer;
s104: providing an external force to deform the deformation layer to a side far away from the substrate, wherein the bonding adhesive layer deforms under the deformation action of the deformation layer, and the depth of the at least one light-emitting element embedded into the bonding adhesive layer is reduced;
s105: transferring the at least one light emitting element with a transfer assembly;
s106: the transfer assembly separates the at least one light emitting element from the temporary substrate.
10. The transfer method according to claim 9, wherein in step S104, the external force may be a voltage, an illumination or a temperature.
CN202111421641.0A 2021-11-26 2021-11-26 Temporary substrate and transfer method of light-emitting element Pending CN116190296A (en)

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