CN116177483A - Method for regulating nanoscale logic gate based on lithium niobate single crystal film external field - Google Patents
Method for regulating nanoscale logic gate based on lithium niobate single crystal film external field Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductors, relates to MEMS material preparation, and in particular relates to a method for regulating and controlling a nanoscale logic gate based on a lithium niobate single crystal film external field, LN/SiO 2 And on the lithium niobate bonding sheet of/Cr/LN, regulating the output voltage of a needle point into alternating voltage in Single Frequency PFM mode, regulating and controlling to be about 90-degree included angle domain structure by utilizing two alternating polarizations, preparing a hook-shaped electric domain structure, and designing logic NOT AND gate, NOT AND gate and NOT AND gate based on the hook-shaped electric domain structure. The invention prepares the hook-shaped domain structure with the inclination angle of about 90 degrees based on the characteristics of two different inclination angles in the regulation and control of the alternating current domain, effectively solves the problems of large size, high power consumption and the like of the traditional logic device by utilizing the characteristic of high switching ratio of the nanoscale charged domain wall, and the prepared product has no fear of various severe environments, low power consumption and openThe closing ratio is high, the repeatability is strong, has the advantages of stability, low energy consumption, repeatability and the like.
Description
Technical Field
The invention belongs to the technical field of semiconductors, relates to preparation of MEMS materials, and particularly relates to a method for regulating a nanoscale logic gate based on a lithium niobate single crystal film external field.
Background
Along with the continuous progress of MEMS processing technology, the miniaturization of devices and the degree of functional integration are greatly developed. The existing logic device has the problems of large power consumption, large size, poor thermal stability and the like, and is limited in application in various occasions. Currently, erasure and reconstruction of nano domain walls is one of the main methods of nano-scale logic device fabrication due to the intensive study of charged domain walls in ferroelectric materials. The traditional TTL and CMOS gate circuits have the problems that the design structure is complex, the performance of materials is difficult to maintain in a severe environment, and the like, so that the reliable logic gate circuits with low power consumption, small size and high stability are difficult to prepare. And with the deep application of logic devices, the requirements on output delay, power consumption and size of the devices are higher and higher. Therefore, the development of a logic gate circuit with small size, low power consumption and high stability has become an object for scientific researchers at the present time.
The lithium niobate is a lead-free ferroelectric monocrystal, has the characteristics of high Curie temperature, single domain wall inclination angle and the like, and has high research value in an outfield regulation nano-scale logic device. Traditional logic devices are generally TTL and CMOS structures, and in the preparation of the logic devices, multiple triodes or MOS transistors and other structures are needed to be prepared, but the logic gates are complex in structure and high in power consumption.
Disclosure of Invention
The invention aims to provide a method for regulating and controlling a nanoscale logic gate based on a lithium niobate single crystal film outfield, which can solve the problem that the traditional ferroelectric domain wall logic device is difficult to utilize a PFM outfield to regulate and control a domain structure and can directly control logic.
The invention is realized by adopting the following technical scheme:
a method for regulating and controlling nanoscale logic gates based on a lithium niobate single crystal film external field comprises the following steps:
step S1, in a lithium niobate single crystal (LiNbO) 3 LN) surface is subjected to ion implantation to form a damaged layer, and then a metal layer is sputtered; growing a silicon dioxide insulating layer on another lithium niobate monocrystal substrate;
directly bonding lithium niobate monocrystal with lithium niobate monocrystal substrate, annealing, stripping damaged layer to obtain monocrystal lithium niobate film, thinning and polishing to prepare optical grade lithium niobate film with LN/SiO successively from bottom to top 2 /Cr/LN。
Step S2, the PFM equipment is opened to a Single Frequency PFM mode, and the output voltage of the needle point is adjusted from direct current voltage to alternating current voltage.
And S3, selecting a region needing polarization by using a PFM equipment microscope, and setting a proper voltage frequency.
And S4, selecting a stripe gray scale pattern and a proper voltage amplitude in a Litho mode, and finishing the formation of the first alternating current polarization regulation nano domain structure.
And S5, after changing the polarization direction, forming the hook-shaped nano domain structure regulated and controlled by the second alternating current polarization.
And S6, designing an on-off experiment of the charged domain wall, and verifying the switching characteristic of the charged domain wall of the lithium niobate single crystal film.
Step S7, designing a logic NOT gate structure, a NOR gate structure and a NAND gate structure by using a hook-shaped nano domain structure based on an on-off experiment result; wherein, the definition of the input state is: erasing a charged domain wall defines a logical input "0", and reconstructing a charged domain wall defines a logical input "1"; the definition of the output state is: the high resistance state is defined as a logic output "1", and the low resistance state is defined as a logic output "0".
It is further preferred that the angle between the hook-shaped nano domains under two polarizations is 85 deg. -95 deg.. The on-off experiment is the erasure and reconstruction of the charged domain wall, the erasure voltage of the charged domain wall is a negative voltage, and the reconstruction voltage of the charged domain wall is a positive voltage.
Further preferably, in step S1, the implanted ions are helium ions; he (He) + The ion implantation energy range is 35 KeV-400 KeV, and the implantation dosage is more than 1X 10 13 ions/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The metal layer is a Cr layer with the thickness of 100 nm; a silicon dioxide insulating layer with a thickness of 2 μm was formed on another lithium niobate single crystal substrate by vapor deposition. In step S2, the tip output voltage is an ac voltage of a sinusoidal signal. In step S3, the voltage frequency is 1-50 Hz. In step S4, the voltage amplitude is 80-130V.
The method of the invention is to prepare LN/SiO 2 Selecting a region needing polarization on a/Cr/LN bonding sheet, applying alternating voltage with controllable frequency and amplitude by using a PFM needle point, finishing the first polarization, changing the polarization direction, finishing the second polarization, realizing the preparation of a hook-shaped electric domain structure by two electric domain inversions, designing an on-off experiment, verifying the feasibility of the experiment, and finally finishing the logic circuit design of a logic NOT gate, a NOR gate and a NAND gate.
Unlike the complicated structure of traditional logic device, the invention successfully prepares the nano logic gate with reliable logic function by using PFM output alternating voltage to regulate nano hook-shaped electric domain structure based on the characteristics of high nano domain wall switching ratio and low energy consumption, effectively solves the problems of high power consumption, large size, complex structure and the like of the traditional gate circuit, and the prepared product is free from various severe environments and has the advantages of low power consumption, small size, simple structure, good stability, high reliability, environmental friendliness (no lead) and the like.
The invention has reasonable design, prepares a hook-shaped domain structure with the inclination angle of about 90 degrees based on the characteristics of two different inclination angles in the regulation and control of an alternating current domain, systematically researches the external field regulation and control technology of a ferroelectric single crystal film by utilizing the design method of the high switching ratio characteristic of a nanoscale charged domain wall, and has important scientific significance and application value for breaking through the manufacturing and lifting limitation of a nano device and the development and application popularization of domain wall elements with high stability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 shows the result of a striped domain of approximately 135 deg..
Figure 2 shows the result of a striped domain of about 45 deg..
FIG. 3 shows a graph of the effect of controlling the hook-type electric domains.
FIG. 4 shows the electric domain pattern modulated by the striped gray pattern under DC voltage.
Fig. 5 shows the electric domain pattern of the striped gray pattern under ac polarization.
Fig. 6 shows the domain wall current pattern of an ac domain at a frequency of 15 Hz.
Fig. 7 shows the Section Line pattern of the domain wall current in the designated area (oval labeled) of fig. 6.
Fig. 8 shows the domain wall current pattern after erasing the designated area (oval label) of the charged domain wall of fig. 6.
Fig. 9 shows the Section Line pattern of the domain wall current in the designated region (oval labeled) of fig. 8.
Fig. 10 shows the domain wall current pattern after reconstruction of the domain walls with electrical charges in the designated areas (ellipses marked) in fig. 8.
Fig. 11 shows the Section Line pattern of the domain wall current in the designated region (oval labeled) of fig. 10.
Fig. 12 shows a logical not gate design.
Fig. 13 shows a logical nor gate design.
Fig. 14 shows a logic nand gate design.
Fig. 15 shows a logical nor gate design.
Fig. 16 shows a logic nand gate design.
Fig. 17 shows the erasing result of the hook-type electric domains.
FIG. 18 shows the result of voltage regulation of 70V in the stripe type electric domains.
FIG. 19 shows the result of 75V voltage regulation for the striped domains.
FIG. 20 shows the result of the voltage regulation of the striped domains 80V.
FIG. 21 shows the result of voltage regulation of the stripe-type electric domains 85V.
FIG. 22 shows the result of 90V voltage regulation for the striped domains.
Fig. 23 shows the test result of domain wall current at day 0 after the preparation of the stripe type electric domain.
Fig. 24 shows the result of maintaining the domain wall current at 100 days after the preparation of the stripe-type electric domain.
FIG. 25 shows the domain results for 10Hz voltage frequency modulation of striped domains.
FIG. 26 shows the domain results for a striped domain 20Hz voltage frequency modulation.
FIG. 27 shows the domain results for a striped domain 30Hz voltage frequency modulation.
Detailed Description
The method for regulating nanoscale logic devices based on the outfield of the lithium niobate single crystal film of the embodiment of the invention firstly forms LN/SiO by injecting a damage layer into lithium niobate single crystal ions, sputtering a metal film by magnetron sputtering and directly bonding with a lithium niobate substrate with a silicon dioxide insulating layer 2 And (3) stripping the damaged layer after annealing the/Cr/LN lithium niobate bonding sheet, and obtaining the optical-grade lithium niobate film by using thinning and polishing processes. Then adjusting the needle point output voltage in Single Frequency PFM mode to AC voltage, then selecting the region needing polarization and setting proper voltage frequency, opening Litho mode to select stripe gray scale and setting proper voltage amplitude, and completing the formation of the first AC polarization regulation nano domain structure; then changing the polarization direction to complete the formation of the second alternating current polarization regulation and control hook-shaped nano domain structure(according to the experimental result, the electric domain of which the type of FIG. 1 is about 135 degrees is defined, the range of the existing data in the measurement result is between 134 degrees and 138 degrees, the electric domain of which the type of FIG. 2 is about 45 degrees is defined, and therefore, the included angle of the hook-shaped electric domain is about 90 degrees, as shown in FIG. 3). And (3) verifying the switching characteristics of the charged domain wall of the lithium niobate monocrystal film through a design on-off experiment, and finally designing a logic NOT gate structure, a NOT gate structure and a NOT gate structure by using a hook-shaped nano domain structure based on the on-off experiment result.
Wherein the ion implanted into the damaged layer is helium ion, he + The ion implantation energy range is 35 KeV-400 KeV, and the implantation dosage is more than 1X 10 13 ions/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The implantation energy of helium ions determines the position of the damaged layer, the larger the implantation energy is, the closer the damaged layer is to the bottom of the LN single crystal (the thicker the thin film is), the smaller the implantation energy is, the closer the damaged layer is to the upper surface of the LN single crystal (the thinner the thin film is), the implantation depth of the ions on the surface of the lithium niobate single crystal is controlled by the implantation energy of helium ions, and the easiness degree of stripping is determined by the dosage.
The invention selects the lithium niobate single crystal film, the lithium niobate is used as an artificial synthetic single crystal, has the characteristics of high Curie temperature, single domain wall angle and the like, and is an ideal material for researching the external field regulation nano-scale logic gate. The external field regulating nano logic gate is a method for synthesizing stripe type gray level diagram, frequency, polarization area, polarization voltage and nano domain wall on-off. As the preparation process of the lithium niobate monocrystal film is mature and the inclination angle of the domain wall is single, the material is suitable for researching the formation of the external field regulation high-density nano domain structure, has wide application range and is beneficial to the preparation of a later-stage high-output response device.
At present, unless the gray level diagram is used for controlling, the electric domains are prepared without the possibility of adjusting angles formed by the electric domains, namely, the positions of the domain inversion can be adjusted only under the condition that the gray level diagram is not changed, and the direction of the domain inversion cannot be adjusted. As shown in fig. 4, in the striped gray scale pattern, when a direct voltage is applied by using the PFM tip, only the electric domain pattern shown in fig. 4 can be controlled.
Since the alternating frequency of the ac voltage causes that some area voltages are insufficient to realize the inversion of the electric domains during the polarization process, and the voltages are continuous during the whole polarization process, regular gaps (some gaps which are originally in the inversion areas of the polarization) occur during the polarization process of the ac voltage, as shown in fig. 5, the existence of the gaps further verifies the authenticity of the alternating signals applied on the PFM probe, and is also the key of external field regulation in the invention, and the hook-shaped electric domains cannot be prepared without the gaps. The gaps enable the electric domain structure to be discontinuous in the pattern range, and the domain structure distributed in a segmented mode can form new domains in the mode of utilizing secondary polarization. In the dc polarization process, the top-down polarization and the bottom-up polarization processes are indistinguishable. However, in the ac polarization process, the top-down polarization and the bottom-up polarization are different, and this is mainly that the continuous ac voltage is different in the position of polarization at the same time when the ac voltage is polarized from top to bottom and from bottom to top, and the arrangement of the gaps is not exactly the same, and in this case, an angle difference is generated. The two poling directions create domains with an angular deviation of about 90 degrees, and this poling pattern is suitable for using multiple poling to create different new domains.
The result of erasing the hook-type electric domains is shown in fig. 17. By erasing a portion of the charged domain wall, a change in the conductive state is achieved, as the intermittent conductivity of the charged domain wall will change from a low resistance state to a high resistance state.
The influence of alternating voltage on the formation of alternating current domains is shown in fig. 18 to 22, and the invention performs a polarization experiment of 70V-90V, and verifies that the voltage which is more than or equal to 90V is needed for obtaining the 20 mu m region to finish domain regulation. Compared with direct current voltage regulation, alternating current polarization requires higher voltage to complete polarization inversion, which is mainly related to the fact that the effective value of alternating current voltage is 0.707 times of the amplitude, so that the current polarization requires higher voltage to realize inversion of electric domains.
The holding time of the domain wall current was tested as a result of experiments for stable holding of alternating current domains of domain structures at 30Hz voltage in the 100 μm region, since the presence of the domain wall current confirms the presence of the electric domains, i.e. verifies the electric domain holding. Fig. 23 is a test result of a domain wall current at day 0 after the preparation of an electric domain, and fig. 24 is a test result of a maintenance of a domain wall current at day 100 after the preparation of an electric domain. It can be seen that the method of the present invention produces complete electrical domains with very pronounced retention characteristics and good retention. The alternating current polarization regulation nano domain structure has good domain wall current retention performance, and is suitable for manufacturing various sensing devices.
Fig. 25 to 27 show the results of electric domain control prepared at different voltage frequencies of the stripe-type electric domains under the alternating voltage, and the stripe-type electric domains also have the conditions of increasing frequency and decreasing gap. Because of the influence of frequency on the electric domain structure, electric domains with different densities can be prepared by only changing the voltage frequency in a fixed range, and the method has good guiding significance for the preparation of high-density domain walls and the enhancement of piezoelectric response of the domain walls.
The most important of the logic device is that what needs to be proved is the logic '0' and '1' of input and output respectively, and for this purpose, the invention designs an on-off experiment for verifying the switching characteristics of the charged domain wall. The invention sets the alternating frequency with the frequency of 15Hz to finish the polarization inversion of the electric domain, as shown in figure 6, the figure is a c-AFM picture, namely domain wall current pattern, which is used for describing the on-off experiment of the electrified domain wall which is carried out subsequently; as shown in fig. 7, a Section Line graph of domain wall current in a circular region shows the case of domain wall current in this Section, where two significantly more conductive regions (portions with charged domain walls) are shown in an elliptical circle. As shown in fig. 8, the subsequent erasure of the charged domain wall in the designated area (location in the oval circle) clearly shows that there is substantially no domain wall current after the erasure of the charged domain wall, but is always in a state of current similar to that of background noise, as shown in fig. 9; the reconstruction of the charged domain walls in the designated region (location in the oval circle) is again completed as shown in fig. 10, after which again the apparent domain wall current is visible as shown in fig. 11. The domain wall current changes throughout the process are therefore: the charged domain wall is changed from a first conductive state to a non-conductive state after the erasing step, and finally is conducted again after the domain structure is reconstructed. Through the on-off experiment, the electrical conductivity of the electrified domain wall is perfectly verified to disappear after the electrified domain wall is erased, and the electrical conductivity is molded again along with the reconstruction of the electrified domain wall, so that the repeatable, low-power-consumption and low-cost switching means has a very high design and research prospect in the future.
The realization of the logic gate is different from the erasure and reconstruction of the whole domain structure in the on-off experiment, and the ideal method is to realize the on-off of domain walls and not to influence the whole structure of the domain. Therefore, the invention designs a hook-shaped domain structure, and the domain structure with an included angle of approximately 90 degrees can avoid the erasure of the whole domain structure possibly existing in the experimental process, thereby being beneficial to logic expression.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions of the embodiments of the present invention are clearly and completely described, and it is apparent that the embodiments described below are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, one of ordinary skill in the art would be able to obtain all other embodiments without undue burden. The reagents and raw materials used in the examples of the invention are all commercially available or self-made.
Example 1
A method for regulating and controlling nanoscale logic gates based on a lithium niobate single crystal film external field comprises the following steps:
step S1, helium ions are injected on the surface of the lithium niobate single crystal to form a damage layer (the injection depth is controlled by the energy of the helium ions, wherein the injection energy of the helium ions is 200KeV, and the injection dosage is 1 multiplied by 10) 13 ions/cm 2 ) And sputtering a layer of metal Cr with the thickness of 100nm by utilizing the magnetron sputtering technology. Simultaneously, a silicon dioxide film with the thickness of 2 mu m is grown on another lithium niobate monocrystal substrate by a vapor deposition method.
Directly bonding the lithium niobate substrate and the lithium niobate monocrystal together, and polishing and thinning to obtain the required thickness of the lithium niobate monocrystal film. As a result of the test, the roughness reaches the pm level in the region of 10 μm×10 μm.
And S2, connecting the bottom electrode of the bonding sheet with the small iron sheet by utilizing conductive silver paste, and then accessing the ground end of the equipment to finish the installation of the sample to be tested. The PFM device was turned on to Single Frequency PFM mode, and the output voltage of the nanotip was adjusted to the ac voltage of the sinusoidal signal.
And S3, selecting a required polarization region by utilizing a PFM equipment microscope, setting a square region with a side length of 100 mu m as a polarization range, and setting the voltage frequency as 10Hz.
And S4, selecting a stripe gray scale map for polarization in a Litho mode, and adjusting the voltage amplitude to be 100V. And finishing the formation of the first alternating current polarization regulation nano domain structure.
And S5, after changing the polarization direction, forming the hook-shaped nano domain structure regulated and controlled by the second alternating current polarization.
The included angle between the electric domains is changed except for the two polarization, other parameters are kept consistent, and the included angle between the two polarization forms the electric domain of about 90 degrees.
And S6, verifying the switching characteristics of the charged domain wall of the lithium niobate single crystal film through an on-off experiment.
S7, designing a logic NOT gate circuit and a truth table thereof by using a hook-type nano domain structure, wherein an erasing charged domain wall is defined as logic input '0', and a reconstruction charged domain wall is defined as logic input '1'; the high resistance state is defined as a logic output "1", and the low resistance state is defined as a logic output "0".
As shown in fig. 12 (logic "not gate" truth table see table 1), following the application of a logic 0 input, a break occurs in the continuously charged domain wall where there is little domain wall current (i.e., the resistance is very high, the output assumes a high resistance state, logic output 1). It is apparent that when a logic 1 input is applied, there is no break in the charged domain wall and the output still assumes a low resistance state (logic 0). Based on this, a logical NOT gate is established.
Table 1 logical NOT truth table
Example 2
A method for regulating and controlling nanoscale logic gates based on a lithium niobate single crystal film external field comprises the following steps:
step S1, helium ions are injected on the surface of the lithium niobate single crystal to form a damage layer (the injection depth is controlled by the energy of the helium ions, wherein the injection energy of the helium ions is 200KeV, and the injection dosage is 1 multiplied by 10) 13 ions/cm 2 ) And sputtering a layer of metal Cr with the thickness of 100nm by utilizing the magnetron sputtering technology. Simultaneously, a silicon dioxide film with the thickness of 2 mu m is grown on another lithium niobate monocrystal substrate by a vapor deposition method.
Directly bonding the lithium niobate substrate and the lithium niobate monocrystal together, and polishing and thinning to obtain the required thickness of the lithium niobate monocrystal film. As a result of the test, the roughness reaches the pm level in the region of 10 μm×10 μm.
And S2, connecting the bottom electrode of the bonding sheet with the small iron sheet by utilizing conductive silver paste, and then accessing the ground end of the equipment to complete the installation of the sample to be tested. The PFM device was turned on to Single Frequency PFM mode, and the output voltage of the nanotip was adjusted to the ac voltage of the sinusoidal signal.
And S3, selecting a required polarization region by utilizing a PFM equipment microscope, setting a square region with a side length of 100 mu m as a polarization range, and setting a voltage frequency to be 20Hz.
And S4, selecting a stripe gray scale map for polarization in a Litho mode, and adjusting the voltage amplitude to be 110V. And finishing the formation of the first alternating current polarization regulation nano domain structure.
And S5, after changing the polarization direction, forming the hook-shaped nano domain structure regulated and controlled by the second alternating current polarization.
The included angle between the electric domains is changed except for the two polarization, other parameters are kept consistent, and the included angle between the two polarization forms the electric domain of about 90 degrees.
And S6, verifying the switching characteristics of the charged domain wall of the lithium niobate single crystal film through an on-off experiment.
S7, designing a logic NOR gate circuit and a truth table thereof by using a hook-type nano domain structure, wherein an erasing charged domain wall is defined as logic input 0, and a reconstruction charged domain wall is defined as logic input 1; the high resistance state is defined as a logic output "1", and the low resistance state is defined as a logic output "0".
As shown in fig. 13 (the truth table of the logic nor gate is shown in table 2), two hook-shaped domains are connected in parallel, logic level 1 is input respectively, and two charged domain walls can be kept continuous, so that the output end is in a low-resistance state (logic 0); inputting logic level 0 and 1 respectively, wherein one of the two electrified domains is interrupted and the other electrified domain is kept continuous, and the output end still presents a low-resistance state (logic 0) because of the parallel connection of the circuits; the logic level 0 is input separately, and gaps are generated between the two charged domain walls, so that the output terminal is in a high-resistance state (logic 1). Based on this, a logical nor gate is established.
Table 2 logical NOR gate truth table
Example 3
A method for regulating and controlling nanoscale logic gates based on a lithium niobate single crystal film external field comprises the following steps:
step S1, helium ions are injected on the surface of the lithium niobate single crystal to form a damage layer (the injection depth is controlled by the energy of the helium ions, wherein the injection energy of the helium ions is 200KeV, and the injection dosage is 1 multiplied by 10) 13 ions/cm 2 ) And sputtering a layer of metal Cr with the thickness of 100nm by utilizing the magnetron sputtering technology. Simultaneously, a silicon dioxide film with the thickness of 2 mu m is grown on another lithium niobate monocrystal substrate by a vapor deposition method.
Directly bonding the lithium niobate substrate and the lithium niobate monocrystal together, and polishing and thinning to obtain the required thickness of the lithium niobate monocrystal film. As a result of the test, the roughness reaches the pm level in the region of 10 μm×10 μm.
And S2, connecting the bottom electrode of the bonding sheet with the small iron sheet by utilizing conductive silver paste, and then accessing the ground end of the equipment to finish the installation of the sample to be tested. The PFM device was turned on to Single Frequency PFM mode, and the output voltage of the nanotip was adjusted to the ac voltage of the sinusoidal signal.
And S3, selecting a required polarization region by utilizing a PFM equipment microscope, setting a square region with the side length of 20 mu m as a polarization range, and setting the voltage frequency to be 30Hz.
And S4, selecting a stripe gray scale image for polarization in a Litho mode, and adjusting the voltage amplitude to be 90V. And finishing the formation of the first alternating current polarization regulation nano domain structure.
And S5, after changing the polarization direction, forming the hook-shaped nano domain structure regulated and controlled by the second alternating current polarization.
The included angle between the electric domains is changed except for the two polarization, other parameters are kept consistent, and the included angle between the two polarization forms the electric domain of about 90 degrees.
And S6, verifying the switching characteristics of the charged domain wall of the lithium niobate single crystal film through an on-off experiment.
S7, designing a logic NAND gate circuit and a truth table thereof by using a hook-type nano domain structure, wherein an erasing charged domain wall is defined as logic input 0, and a reconstruction charged domain wall is defined as logic input 1; the high resistance state is defined as a logic output "1", and the low resistance state is defined as a logic output "0".
As shown in fig. 14 (the truth table of the logic nand gate is shown in table 3), two hook-shaped domains are connected in series, logic level 1 is input respectively, and two charged domain walls can be kept continuous, so that the output end is in a low-resistance state (logic 0); inputting logic level 0 and 1 respectively, wherein one of the two charged domain walls is interrupted and the other charged domain wall is continuous, and the output end is in a high-resistance state (logic 1) because of the serial connection of the circuits; a logic level 0 is input separately, and gaps occur in both charged domain walls, so that the output terminal exhibits a high resistance state (logic 1). Based on this, a logical NAND gate is established.
Table 3 logic NAND truth table
For the application requirements of a nanoscale logic device with strong stability, good repeatability and low power consumption, the feasibility of being compatible with a programming technology and an outfield regulation technology is explored, namely, the nanoscale logic gate is prepared by utilizing the characteristics of PFM outfield precise regulation and control of electric domain inversion, low power consumption of a nanoscale domain wall and small size. Based on the regulation and control hook-shaped domain structure, on the basis of reliable on-off experiments, a logic gate with small size, simple structure and low power consumption is constructed, and as shown in fig. 15 and 16, the output obtained by various possible inputs of the corresponding logic gate NOR gate and NAND gate are exemplified one by one.
The invention can completely construct the logic gate circuit by utilizing a very small amount of charged domain walls, which is very simple compared with the complexity of the traditional CMOS tube structure and TTL gate circuit structure, and the lithium niobate material has very high Curie temperature and intrinsic anti-radiation performance, has the potential of continuous working in various severe environments, belongs to development research of front-end science, accords with the whole direction of MEMS research, is expected to solve the problems of complex design structure, high power consumption, large size and the like of the traditional logic gate circuit in the future, and has a certain guidance opinion on the development of the subsequent high-density integrated circuit.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for regulating and controlling nanoscale logic gates based on lithium niobate single crystal thin film outfield is characterized by comprising the following steps: the method comprises the following steps:
s1, forming a damaged layer after ion implantation on the surface of a lithium niobate single crystal, and then sputtering a metal layer; growing a silicon dioxide insulating layer on another lithium niobate monocrystal substrate;
directly bonding the lithium niobate monocrystal with a lithium niobate monocrystal substrate, stripping a damaged layer after annealing to obtain a monocrystal lithium niobate film, and preparing an optical-grade lithium niobate film by utilizing thinning and polishing processes;
step S2, the PFM equipment is opened to a Single Frequency PFM mode, and the output voltage of the needle tip is adjusted from direct current voltage to alternating current voltage;
step S3, selecting a region needing polarization by utilizing a PFM equipment microscope, and setting proper voltage frequency;
s4, selecting a stripe gray scale map and a voltage amplitude value in a Litho mode to finish the formation of a first alternating current polarization regulation nano domain structure;
s5, after changing the polarization direction, finishing the formation of a hook-type nano domain structure regulated and controlled by the second alternating current polarization;
s6, verifying the switching characteristics of the charged domain wall of the lithium niobate single crystal film through an on-off experiment;
s7, designing a logic NOT gate structure, a NOR gate structure and a NAND gate structure by using a hook-type nano domain structure; wherein, the definition of the input state is: erasing a charged domain wall defines a logical input "0", and reconstructing a charged domain wall defines a logical input "1"; the definition of the output state is: the high resistance state is defined as a logic output "1", and the low resistance state is defined as a logic output "0".
2. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, which is characterized by comprising the following steps of: the included angle of the hook-shaped nano domains under the two polarizations is 85-95 degrees.
3. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film according to claim 1 or 2, wherein the method comprises the following steps: the erase voltage of the charged domain wall is a negative voltage and the reconstruction voltage of the charged domain wall is a positive voltage.
4. A method for controlling nanoscale logic gates based on lithium niobate single crystal thin film outfield according to claim 3, wherein: in step S1, the implanted ions are helium ions; he (He) + The ion implantation energy range is 35 KeV-400 KeV, and the implantation dosage is more than 1X 10 13 ions/cm 2 。
5. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, as claimed in claim 4, is characterized in that: in the step S1, the metal layer is a Cr layer with the thickness of 100 nm; a silicon dioxide insulating layer with a thickness of 2 μm was formed on another lithium niobate single crystal substrate by vapor deposition.
6. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, as claimed in claim 5, is characterized in that: in step S2, the tip output voltage is an ac voltage of a sinusoidal signal.
7. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, as claimed in claim 6, is characterized in that: in step S3, the voltage frequency is 1-50 Hz.
8. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, as claimed in claim 7, is characterized in that: the voltage frequency is 10-30 Hz.
9. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, which is characterized by comprising the following steps of: in step S4, the voltage amplitude is 80-130V.
10. The method for regulating nanoscale logic gates based on the outfield of the lithium niobate single crystal thin film, which is characterized in that: the voltage amplitude is 90-110V.
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