CN116170932A - Radio frequency plasma source supporting pulse monitoring function - Google Patents
Radio frequency plasma source supporting pulse monitoring function Download PDFInfo
- Publication number
- CN116170932A CN116170932A CN202310134744.1A CN202310134744A CN116170932A CN 116170932 A CN116170932 A CN 116170932A CN 202310134744 A CN202310134744 A CN 202310134744A CN 116170932 A CN116170932 A CN 116170932A
- Authority
- CN
- China
- Prior art keywords
- unit
- output
- limit
- output power
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012544 monitoring process Methods 0.000 title claims abstract description 29
- 238000012545 processing Methods 0.000 claims abstract description 47
- 230000006870 function Effects 0.000 claims abstract description 18
- 238000004891 communication Methods 0.000 claims abstract description 8
- 238000005070 sampling Methods 0.000 claims description 38
- 210000002381 plasma Anatomy 0.000 description 42
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/02—Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/02—Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
- G01R29/023—Measuring pulse width
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a radio frequency plasma source supporting a pulse monitoring function, which comprises: the device comprises a radio frequency circuit, a power detector, an RF output unit, a feedback control unit, a data processing unit, a memory and an upper computer PC. The output end of the radio frequency circuit is connected with the input end of the power detector, the input end of the RF output unit is connected with the first output end of the power detector, the second output end of the power detector is connected with the input end of the data processing unit, the input end of the feedback control unit is connected with the first output end of the data processing unit, the control end of the radio frequency circuit is connected with the output end of the feedback control unit, the input end of the memory is connected with the second output end of the data processing unit, and the memory transmits the monitored data result to the upper computer through the communication interface.
Description
Technical Field
The invention relates to the technical field of radio frequency plasma sources, in particular to a radio frequency plasma source supporting a pulse monitoring function.
Background
The radio frequency power supply is used as a special power supply for exciting plasma, and is widely applied to key process equipment of integrated circuits, in particular to plasma etching and plasma enhanced thin film deposition equipment. The advanced radio frequency power supply integrates the functions of frequency tuning, pulse, full digital control and the like, wherein the pulse function is firstly applied to a bias electrode of the equipment, and the pulse intermittently releases charges accumulated on the surface of the wafer while the plasma sheath accelerates ion bombardment for selective etching.
In advanced process nodes (14 nm and below) in integrated circuit processing, pulsed plasma sources are applied to the source of plasma reaction chambers (including capacitively coupled plasma, inductively coupled plasma) to generate lower electron temperature plasmas, thereby reducing plasma damage to wafers while increasing selectivity. Unlike the bias electrode, the source pulse greatly affects the stability of the plasma load, which in turn, instability of the load can also cause the output characteristics of the rf power supply to become more sensitive. Thus, during wafer processing, the power output quality of the source pulse directly affects the processing process.
The traditional radio frequency power supply has a pulse output function, but the following disadvantages exist: (1) no real-time monitoring of power output; (2) In general, the frequency of the output pulse of the radio frequency power supply is 2 KHz-100 KHz or even higher, under the working condition of more than tens KHz, the data acquisition rate per second is extremely large, and all data cannot be stored in the buffer of the radio frequency power supply; (3) The transmission rate of the communication interface in the radio frequency power supply is in the order of 100ms, and microsecond monitoring results cannot be transmitted, namely, sampled data cannot be completely transmitted to the upper computer in real time.
Disclosure of Invention
In view of the above problems, the present invention provides a radio frequency plasma source supporting a pulse monitoring function, which can effectively monitor the output quality of radio frequency pulses in a plasma processing process, including parameters such as pulse amplitude, pulse width, stability, etc., and can effectively store and transmit radio frequency pulse count values which do not meet requirements, thereby realizing high frequency radio frequency pulse monitoring.
The invention provides a radio frequency plasma source supporting a pulse monitoring function, which comprises a radio frequency circuit, a power detector, an RF output unit, a feedback control unit, a data processing unit, a memory and an upper computer PC, wherein the power detector is connected with the RF output unit;
the output end of the radio frequency circuit is connected with the input end of the power detector, the input end of the RF output unit is connected with the first output end of the power detector, the second output end of the power detector is connected with the input end of the data processing unit, the input end of the feedback control unit is connected with the first output end of the data processing unit, the control end of the radio frequency circuit is connected with the output end of the feedback control unit, the input end of the memory is connected with the second output end of the data processing unit, and the memory transmits the monitored data result to the upper computer through a communication interface.
Further, the data processing unit comprises an output power threshold unit, a first comparison unit and a first counting unit;
the output power threshold unit is preset with an upper output power limit and a lower output power limit, and the upper output power limit and the lower output power limit are output to a first input end of the first comparison unit; the second input end of the first comparing unit is connected with the second output end of the power detector, the input end of the first counting unit is connected with the output end of the first comparing unit, and a first count value is output and stored in the memory.
Further, the first comparing unit compares the amplitude of the output power sampling value with the upper output power limit and the lower output power limit respectively, and generates a comparison result each time the amplitude of the output power sampling value exceeds the upper output power limit or is lower than the lower output power limit; the first counting unit accumulates the comparison result and outputs the first count value.
Further, the data processing unit comprises a plurality of output power threshold units, a plurality of second comparison units and a second counting unit;
an upper output power limit and a lower output power limit are preset in each output power threshold unit, and the upper output power limit and the lower output power limit are output to a first input end of a corresponding second comparison unit; the second input end of each second comparison unit is connected with the second output end of the power detector, and the plurality of input ends of the second counting unit are respectively connected with the output end of each second comparison unit, output a second count value and store the second count value in the memory.
Further, each second comparing unit compares each level amplitude of the output power sampling value with the corresponding upper output power limit and lower output power limit, and generates a comparison result each time the magnitude of each level amplitude of the output power sampling value exceeds the upper output power limit or is lower than the lower output power limit; and the second counting unit accumulates the comparison result and outputs the second counting value.
Further, the upper output power limit may be 110% of the desired output power magnitude and the lower output power limit may be 90% of the desired output power magnitude.
Further, the first counting unit is further provided with a shielding control end, and is used for receiving shielding time;
when the shielding time is valid, the first counting unit does not work; and when the shielding time is invalid, the first counting unit works normally.
Further, the second counting unit is further provided with a shielding control end, and is used for receiving shielding time;
when the shielding time is valid, the second counting unit does not work; and when the shielding time is invalid, the second counting unit works normally.
Further, the data processing unit comprises a reflected power threshold unit, a third comparison unit and a third counting unit;
the reflected power threshold unit is preset with an upper limit of reflected power, and the upper limit of reflected power is output to the first input end of the third comparison unit; the power detector samples the reflected power of the radio frequency pulse to obtain a reflected power sampling value, and the reflected power sampling value is output to the second input end of the third comparison unit through the third output end; and the input end of the third counting unit is connected with the output end of the third comparing unit, outputs the third counting value and stores the third counting value in the memory.
Further, the third comparing unit compares the amplitude of the reflected power sampling value with the upper limit of the reflected power respectively, and when the amplitude of the reflected power sampling value exceeds the upper limit of the reflected power, a comparison result is generated; and the third counting unit accumulates the comparison result and outputs the third counting value.
Further, the data processing unit comprises a pulse width threshold unit, a fourth comparison unit and a fourth counting unit;
the pulse width threshold unit is used for presetting an upper pulse width limit and a lower pulse width limit, and outputting the upper pulse width limit and the lower pulse width limit to a first input end of the fourth comparison unit; the second input end of the fourth comparing unit is connected with the second output end of the power detector, the input end of the fourth counting unit is connected with the output end of the fourth comparing unit, and a fourth count value is output and stored in the memory.
Further, the fourth comparing unit compares the pulse width of the output power sampling value with the pulse width upper limit and the pulse width lower limit, respectively, and generates a comparison result whenever the pulse width of the output power sampling value exceeds the pulse width upper limit or is lower than the pulse width lower limit; and the fourth counting unit accumulates the comparison result and outputs the fourth counting value.
Further, the upper limit of the pulse width is 110% of the desired pulse width, and the lower limit of the pulse width is 90% of the desired pulse width.
Further, the power detector comprises a voltage-current detector.
Further, the memory includes at least one of RAM or nonvolatile memory.
Further, the data processing unit includes at least one of FPGA, DSP, MCU or analog circuitry.
Further, the communication interface comprises at least one of RS232, RS485, devicenet, ethernet or EtherCAT.
Further, the sampling rate of the power detector is less than 10us.
Further, the radio frequency pulse frequency is greater than 2KHz.
The beneficial effects of the invention are as follows: the invention provides a radio frequency plasma source supporting a pulse monitoring function, which can effectively monitor the radio frequency pulse output quality in a plasma processing technology, comprises parameters such as pulse amplitude, pulse width, stability and the like, and can effectively store and transmit radio frequency pulse count values which do not meet requirements, thereby realizing high frequency radio frequency pulse monitoring.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a rf plasma source according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a data processing unit according to a second embodiment of the present invention;
FIG. 3 is a waveform diagram of the amplitude of the output power of the RF pulse according to a second embodiment of the present invention;
FIG. 4 is a waveform diagram of two output power amplitudes of RF pulses according to a third embodiment of the present invention;
FIG. 5 is a waveform diagram of the output power of RF pulses according to a fourth embodiment of the present invention;
FIG. 6 is a schematic diagram of a data processing unit according to a fifth embodiment of the present invention;
FIG. 7 is a schematic diagram of a data processing unit according to a sixth embodiment of the present invention;
fig. 8 is a pulse width waveform diagram of the output power of the rf pulse according to the sixth embodiment of the present invention.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, the "plurality" generally includes at least two, but does not exclude the case of at least one.
The invention will be further described with reference to the drawings and the specific examples.
Referring to fig. 1, a first embodiment of the present invention provides a radio frequency plasma source supporting a pulse monitoring function, which includes a radio frequency circuit, a power detector, an RF output unit, a feedback control unit, a data processing unit, a memory and an upper computer PC. The output end of the radio frequency circuit is connected with the input end of the power detector to generate radio frequency pulses; the input end of the power detector is connected with the output end of the radio frequency circuit, receives radio frequency pulses and samples the output power of the radio frequency pulses; the input end of the RF output unit is connected with the first output end of the power detector, and outputs the radio frequency pulse; the second output end of the power detector is connected with the input end of the data processing unit, processes the output power sampling value of the radio frequency pulse, generates an output signal, and outputs the output signal to the feedback control unit and the memory through the first output end and the second output end respectively; the input end of the feedback control unit is connected with the first output end of the data processing unit, and feedback control is performed according to the output signal of the first output end of the data processing unit to generate a feedback signal; the control end of the radio frequency circuit is connected with the output end of the feedback control unit, and radio frequency pulses are generated according to the feedback signals; meanwhile, the input end of the memory is connected with the second output end of the data processing unit, and output signals of the second output end of the data processing unit are stored to realize monitoring record; the memory transmits the monitored data result to the upper computer through the communication interface.
Further, the power detector comprises a voltage-current detector for sampling the output power of the radio frequency pulse.
Further, the memory includes at least one of RAM or nonvolatile memory.
Further, the data processing unit includes at least one of FPGA, DSP, MCU or analog circuitry.
Further, the communication interface comprises at least one of RS232, RS485, devicenet, ethernet or EtherCAT.
Further, the sampling rate of the power detector is less than 10us.
The invention adds the power detector in the radio frequency plasma source to sample the output power of the radio frequency pulse, thereby realizing the pulse monitoring function.
The second embodiment of the present invention also provides a radio frequency plasma source supporting a pulse monitoring function, wherein the data processing unit monitors the magnitude of the radio frequency pulse output power.
Specifically, as shown in fig. 2, the data processing unit includes an output power threshold unit, a first comparing unit, and a first counting unit. The output power threshold unit is preset with an upper output power limit and a lower output power limit, and the upper output power limit and the lower output power limit are output to a first input end of the first comparison unit; the power detector samples the radio frequency pulse output power to obtain an output power sampling value, and outputs the output power sampling value to the second input end of the first comparison unit; the first input end of the first comparison unit is connected with the output end of the output power threshold unit, the second input end of the first comparison unit is connected with the second output end of the power detector, the first comparison unit compares the amplitude of the output power sampling value with the upper limit of the output power and the lower limit of the output power respectively, and a comparison result is generated when the amplitude of the output power sampling value exceeds the upper limit of the output power or is lower than the lower limit of the output power; the input end of the first counting unit is connected with the output end of the first comparing unit, the comparison results are accumulated, and a first count value is output and stored in the memory.
Further, an upper output power limit and a lower output power limit are defined by the user, wherein the upper output power limit may be 110% of the desired output power magnitude and the lower output power limit may be 90% of the desired output power magnitude.
The waveform of the amplitude of the output power of the radio frequency pulse of the radio frequency plasma source is shown in fig. 3, the amplitude of the sampling value of the output power is respectively compared with the upper limit 550W of the output power and the lower limit 450W of the output power, and the amplitude of the output power of the radio frequency pulse is monitored.
In this embodiment of the present invention, the rf plasma source can first know the output quality of the rf pulse according to the comparison result of the output power, and quantify how many rf pulses do not meet the requirement in unit time. And secondly, the radio frequency plasma source only stores and transmits the radio frequency pulse count value which does not meet the requirement, so that the storage and transmission of monitoring data are effectively realized, and the radio frequency plasma source can be applied to high frequency radio frequency pulse monitoring.
The third embodiment of the present invention further provides a rf plasma source supporting a pulse monitoring function, where the data processing unit monitors the magnitude of the multi-level output power of the rf pulse.
Specifically, the data processing unit includes a plurality of output power threshold units, a plurality of second comparing units, and a second counting unit. And the output power threshold unit and the second comparison unit are respectively used for monitoring the magnitude of the primary output power.
An upper output power limit and a lower output power limit are preset in each output power threshold unit, and the upper output power limit and the lower output power limit are output to a first input end of a corresponding second comparison unit; the power detector samples the radio frequency pulse output power to obtain an output power sampling value, and outputs the output power sampling value to the second input end of each second comparison unit; the first input end of each second comparison unit is connected with the output end of the corresponding output power threshold unit, the second input end of each second comparison unit is connected with the second output end of the power detector, each second comparison unit compares each level amplitude of the output power sampling value with the corresponding upper limit of the output power and the corresponding lower limit of the output power respectively, and each time the magnitude of each level of the output power sampling value exceeds the upper limit of the output power or is lower than the lower limit of the output power, a comparison result is generated; the plurality of input ends of the second counting unit are respectively connected with the output end of each second comparing unit, the comparison results are accumulated, and the second counting value is output and stored in the memory.
The two-stage output power amplitude waveforms of the radio frequency pulse of the radio frequency plasma source are shown in fig. 4, the amplitude of each stage of the output power sampling value is respectively compared with the upper limit of the output power and the lower limit of the output power, and the magnitude of the output power of each stage of the radio frequency pulse is monitored.
The fourth embodiment of the present invention also provides a radio frequency plasma source supporting a pulse monitoring function, wherein shielding control is performed on the data processing unit.
Specifically, the first counting unit and the second counting unit are further provided with a shielding control end, and the shielding control end is used for receiving the shielding time t_mask. When the shielding time t_mask is effective, the first counting unit and the second counting unit do not work, and further accumulation counting is not carried out; when the mask time t_mask is invalid, the first counting unit and the second counting unit work normally and count up normally.
The mask time t_mask is determined by the rf pulse, preferably 20us or less, or may be obtained by conversion from the pulse frequency.
The output power waveform of the rf pulse of the rf plasma source is shown in fig. 5, where the rf pulse may be over-output and under-output in the initial start-up condition, and may exceed the upper output power limit or be lower than the lower output power limit. As shown by the shaded portion in fig. 5, the output power at the beginning of the rf pulse is over-output of a greater magnitude, exceeding the upper output power limit. For the initial starting condition, the radio frequency plasma source can be shielded for a period of time during the initial starting, and the output power of the period of time is not accumulated in the count values of the first counting unit and the second counting unit even if the output power is not in accordance with the requirements, so that the false counting under the initial starting condition is avoided.
The fifth embodiment of the present invention further provides a rf plasma source supporting a pulse monitoring function, wherein the data processing unit monitors the magnitude of the rf pulse reflected power.
Specifically, as shown in fig. 6, the data processing unit includes a reflected power threshold unit, a third comparing unit, and a third counting unit. The reflected power threshold unit is preset with a reflected power upper limit, and the reflected power upper limit is output to the first input end of the third comparison unit; the power detector samples the reflected power of the radio frequency pulse to obtain a reflected power sampling value, and the reflected power sampling value is output to a second input end of the third comparison unit through a third output end; the first input end of the third comparison unit is connected with the output end of the reflected power threshold unit, the second input end of the third comparison unit is connected with the third output end of the power detector, the third comparison unit compares the amplitude of the reflected power sampling value with the upper limit of the reflected power respectively, and when the amplitude of the reflected power sampling value exceeds the upper limit of the reflected power, a comparison result is generated; the input end of the third counting unit is connected with the output end of the third comparing unit, the comparison results are accumulated, and the third counting value is output and stored in the memory.
Further, the upper limit of the reflected power is preferably 1% of the output power, or a fixed value, such as 5w,10w, etc.
As shown in fig. 5, the magnitude of the reflected power sample value is compared with the upper limit of the reflected power, and the magnitude of the reflected power of the rf pulse is monitored.
In rf plasma sources, the reflected power of the rf pulse is optimally 0 or very close to 0, but during the source pulse, the reflected power is difficult to achieve 0 by tuning. In this embodiment, it is therefore also necessary to monitor the reflected power of the rf pulses.
In this embodiment of the present invention, the rf plasma source can first know the output quality of the rf pulse according to the comparison result of the reflected power, and quantify how many rf pulses do not meet the requirement in unit time. And secondly, the radio frequency plasma source only stores and transmits the radio frequency pulse count value which does not meet the requirement, so that the storage and transmission of monitoring data are effectively realized, and the radio frequency plasma source can be applied to high frequency radio frequency pulse monitoring.
The sixth embodiment of the present invention further provides a rf plasma source supporting a pulse monitoring function, wherein the data processing unit further monitors a pulse width of the rf pulse output power.
Specifically, as shown in fig. 7, the data processing unit includes a pulse width threshold unit, a fourth comparing unit, and a fourth counting unit. The pulse width threshold unit is used for presetting an upper pulse width limit and a lower pulse width limit and outputting the upper pulse width limit and the lower pulse width limit to a first input end of the fourth comparison unit; the power detector samples the radio frequency pulse output power to obtain an output power sampling value, and outputs the output power sampling value to the second input end of the fourth comparison unit; the first input end of the fourth comparison unit is connected with the output end of the pulse width threshold unit, the second input end of the fourth comparison unit is connected with the second output end of the power detector, the fourth comparison unit compares the pulse width of the output power sampling value with the upper limit and the lower limit of the pulse width respectively, and a comparison result is generated every time the pulse width of the output power sampling value exceeds the upper limit or is lower than the lower limit of the pulse width; the input end of the fourth counting unit is connected with the output end of the fourth comparing unit, the comparison results are accumulated, and a fourth count value is output and stored in the memory.
Further, the upper and lower pulse width limits are defined by the user, wherein the upper pulse width limit may be 110% of the desired pulse width and the lower pulse width limit may be 90% of the desired pulse width.
Further, the time from the rising edge to the falling edge of the output power sampling value is detected, so as to obtain the pulse width of the output power sampling value.
The pulse width waveform of the output power of the rf pulse of the rf plasma source is shown in fig. 8, and the pulse width of the output power sampling value is compared with the upper limit and the lower limit of the pulse width, respectively, so as to monitor the pulse width of the rf pulse output power.
In this embodiment of the present invention, the rf plasma source can first know the output quality of the rf pulse according to the comparison result of the pulse width, and quantify how many rf pulses do not meet the requirement in unit time. And secondly, the radio frequency plasma source only stores and transmits the radio frequency pulse count value which does not meet the requirement, so that the storage and transmission of monitoring data are effectively realized, and the radio frequency plasma source can be applied to high frequency radio frequency pulse monitoring.
In summary, the rf plasma source supporting the pulse monitoring function provided by the invention can not only effectively monitor the rf pulse output quality including parameters such as pulse amplitude, pulse width and stability in the plasma processing process, but also effectively store and transmit the rf pulse count value which does not meet the requirements, thereby realizing the high-frequency rf pulse monitoring.
While the foregoing description illustrates and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as limited to other embodiments, and is capable of numerous other combinations, modifications and environments and is capable of changes or modifications within the scope of the inventive concept as described herein, either as a result of the foregoing teachings or as a result of the knowledge or technology in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (19)
1. A radio frequency plasma source supporting a pulse monitoring function, the radio frequency plasma source comprising: the device comprises a radio frequency circuit, a power detector, an RF output unit, a feedback control unit, a data processing unit, a memory and an upper computer PC;
the output end of the radio frequency circuit is connected with the input end of the power detector, the input end of the RF output unit is connected with the first output end of the power detector, the second output end of the power detector is connected with the input end of the data processing unit, the input end of the feedback control unit is connected with the first output end of the data processing unit, the control end of the radio frequency circuit is connected with the output end of the feedback control unit, the input end of the memory is connected with the second output end of the data processing unit, and the memory transmits the monitored data result to the upper computer through a communication interface.
2. The rf plasma source of claim 1, wherein the data processing unit comprises an output power threshold unit, a first comparison unit, a first counting unit;
the output power threshold unit is preset with an upper output power limit and a lower output power limit, and the upper output power limit and the lower output power limit are output to a first input end of the first comparison unit; the second input end of the first comparing unit is connected with the second output end of the power detector, the input end of the first counting unit is connected with the output end of the first comparing unit, and a first count value is output and stored in the memory.
3. The rf plasma source of claim 2, wherein the first comparing unit compares the magnitude of the output power sample value with the upper output power limit and the lower output power limit, respectively, and generates a comparison result whenever the magnitude of the output power sample value exceeds the upper output power limit or falls below the lower output power limit; the first counting unit accumulates the comparison result and outputs the first count value.
4. The rf plasma source of claim 1, wherein the data processing unit comprises a plurality of output power threshold units, a plurality of second comparison units, a second counting unit;
an upper output power limit and a lower output power limit are preset in each output power threshold unit, and the upper output power limit and the lower output power limit are output to a first input end of a corresponding second comparison unit; the second input end of each second comparison unit is connected with the second output end of the power detector, and the plurality of input ends of the second counting unit are respectively connected with the output end of each second comparison unit, output a second count value and store the second count value in the memory.
5. The rf plasma source of claim 4, wherein each of the second comparing units compares each of the magnitudes of the output power sample values with the corresponding upper and lower output power limits, respectively, and generates a comparison result whenever the magnitude of each of the magnitudes of the output power sample values exceeds the upper output power limit or falls below the lower output power limit; and the second counting unit accumulates the comparison result and outputs the second counting value.
6. The rf plasma source of any of claims 2-5, wherein the upper output power limit may be 110% of the desired output power magnitude and the lower output power limit may be 90% of the desired output power magnitude.
7. A radio frequency plasma source according to claim 2 or 3, wherein the first counting unit further has a shield control terminal for receiving a shield time;
when the shielding time is valid, the first counting unit does not work; and when the shielding time is invalid, the first counting unit works normally.
8. The rf plasma source of claim 4 or 5, wherein the second counting unit further has a shield control terminal for receiving a shield time;
when the shielding time is valid, the second counting unit does not work; and when the shielding time is invalid, the second counting unit works normally.
9. The rf plasma source of any of claims 1, 2, 4, wherein the data processing unit comprises a reflected power threshold unit, a third comparison unit, a third counting unit;
the reflected power threshold unit is preset with an upper limit of reflected power, and the upper limit of reflected power is output to the first input end of the third comparison unit; the power detector samples the reflected power of the radio frequency pulse to obtain a reflected power sampling value, and the reflected power sampling value is output to the second input end of the third comparison unit through the third output end; and the input end of the third counting unit is connected with the output end of the third comparing unit, outputs the third counting value and stores the third counting value in the memory.
10. The rf plasma source of claim 9, wherein the third comparing unit compares the magnitudes of the reflected power sample values with the reflected power upper limit, respectively, and generates a comparison result when the magnitudes of the reflected power sample values exceed the reflected power upper limit; and the third counting unit accumulates the comparison result and outputs the third counting value.
11. The rf plasma source of any of claims 1, 2, 4, wherein the data processing unit comprises a pulse width threshold unit, a fourth comparison unit, a fourth counting unit;
the pulse width threshold unit is used for presetting an upper pulse width limit and a lower pulse width limit, and outputting the upper pulse width limit and the lower pulse width limit to a first input end of the fourth comparison unit; the second input end of the fourth comparing unit is connected with the second output end of the power detector, the input end of the fourth counting unit is connected with the output end of the fourth comparing unit, and a fourth count value is output and stored in the memory.
12. The rf plasma source of claim 11, wherein the fourth comparing unit compares the pulse width of the output power sample value with the upper pulse width limit and the lower pulse width limit, respectively, and generates a comparison result whenever the pulse width of the output power sample value exceeds the upper pulse width limit or falls below the lower pulse width limit; and the fourth counting unit accumulates the comparison result and outputs the fourth counting value.
13. The rf plasma source of claim 12, wherein the upper pulse width limit is 110% of the desired pulse width and the lower pulse width limit is 90% of the desired pulse width.
14. The rf plasma source of claim 1, wherein the power detector comprises a voltage current detector.
15. The rf plasma source of claim 1, wherein the memory comprises at least one of RAM or nonvolatile memory.
16. The rf plasma source of claim 1, wherein the data processing unit comprises at least one of FPGA, DSP, MCU or analog.
17. The rf plasma source of claim 1, wherein the communication interface comprises at least one of RS232, RS485, devicenet, ethernet, or EtherCAT.
18. The rf plasma source of claim 1, wherein the sampling rate of the power detector is less than 10us.
19. The rf plasma source of claim 1, wherein the rf pulse frequency is greater than 2KHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310134744.1A CN116170932B (en) | 2023-02-17 | 2023-02-17 | Radio frequency plasma source supporting pulse monitoring function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310134744.1A CN116170932B (en) | 2023-02-17 | 2023-02-17 | Radio frequency plasma source supporting pulse monitoring function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116170932A true CN116170932A (en) | 2023-05-26 |
| CN116170932B CN116170932B (en) | 2024-02-13 |
Family
ID=86421587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310134744.1A Active CN116170932B (en) | 2023-02-17 | 2023-02-17 | Radio frequency plasma source supporting pulse monitoring function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116170932B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324238A (en) * | 2012-02-23 | 2013-09-25 | Mks仪器公司 | RF control system |
| CN104753386A (en) * | 2015-03-19 | 2015-07-01 | 唐山标先电子有限公司 | Pulse sputtering power source |
| KR20170030892A (en) * | 2015-09-10 | 2017-03-20 | 세메스 주식회사 | Plasma generation device, rf signal supply method and apparatus for treating substrate |
| CN206059896U (en) * | 2016-07-19 | 2017-03-29 | 北京大威激光科技有限公司 | A kind of carbon dioxide radio frequency laser closed loop power control system |
| CN106873712A (en) * | 2017-02-14 | 2017-06-20 | 北京北广科技股份有限公司 | A kind of radio-frequency signal generator controls circuit and radio-frequency signal generator |
| US20200381214A1 (en) * | 2019-06-03 | 2020-12-03 | Applied Materials, Inc. | Dual-level pulse tuning |
| US20210217590A1 (en) * | 2020-01-10 | 2021-07-15 | COMET Technologies USA, Inc. | Fast arc detecting match network |
| EP3952113A1 (en) * | 2020-08-07 | 2022-02-09 | Comet AG | Control unit, radio frequency power generator, and method for generating synchronized radio frequency output signals |
| CN114446752A (en) * | 2020-11-04 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | Detection method and detection device for electric arc of plasma processing chamber |
| CN114582692A (en) * | 2020-11-18 | 2022-06-03 | 中微半导体设备(上海)股份有限公司 | DC bias control method and plasma processing device |
-
2023
- 2023-02-17 CN CN202310134744.1A patent/CN116170932B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324238A (en) * | 2012-02-23 | 2013-09-25 | Mks仪器公司 | RF control system |
| CN104753386A (en) * | 2015-03-19 | 2015-07-01 | 唐山标先电子有限公司 | Pulse sputtering power source |
| KR20170030892A (en) * | 2015-09-10 | 2017-03-20 | 세메스 주식회사 | Plasma generation device, rf signal supply method and apparatus for treating substrate |
| CN206059896U (en) * | 2016-07-19 | 2017-03-29 | 北京大威激光科技有限公司 | A kind of carbon dioxide radio frequency laser closed loop power control system |
| CN106873712A (en) * | 2017-02-14 | 2017-06-20 | 北京北广科技股份有限公司 | A kind of radio-frequency signal generator controls circuit and radio-frequency signal generator |
| US20200381214A1 (en) * | 2019-06-03 | 2020-12-03 | Applied Materials, Inc. | Dual-level pulse tuning |
| US20210217590A1 (en) * | 2020-01-10 | 2021-07-15 | COMET Technologies USA, Inc. | Fast arc detecting match network |
| EP3952113A1 (en) * | 2020-08-07 | 2022-02-09 | Comet AG | Control unit, radio frequency power generator, and method for generating synchronized radio frequency output signals |
| CN114446752A (en) * | 2020-11-04 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | Detection method and detection device for electric arc of plasma processing chamber |
| CN114582692A (en) * | 2020-11-18 | 2022-06-03 | 中微半导体设备(上海)股份有限公司 | DC bias control method and plasma processing device |
Non-Patent Citations (4)
| Title |
|---|
| 巩春志;田修波;朱宗涛;杨士勤;: "脉冲射频/40kV高压直接耦合等离子体离子注入电源系统研制", 真空科学与技术学报, no. 03 * |
| 杨银忠;: "大功率射频激光电源功率的控制研究", 激光杂志, no. 11 * |
| 陈川;胡传皓;曾国强;曲广卫;邸甲俊;葛良全;: "新型α、β放射性活度测量装置设计", 核电子学与探测技术, no. 03 * |
| 霍伟刚;苏成;孙斌;丁振峰;: "脉冲调制射频功率测量中的标定及FFT分析方法研究", 核聚变与等离子体物理, no. 04 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116170932B (en) | 2024-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10748748B2 (en) | RF impedance model based fault detection | |
| KR101430165B1 (en) | Application of wideband sampling for arc detection with a probabilistic model for quantitatively measuring arc events | |
| US6707255B2 (en) | Multirate processing for metrology of plasma RF source | |
| US8192576B2 (en) | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing | |
| SG193746A1 (en) | System and methods of bimodal automatic power and frequency tuning of rf generators | |
| CN104518753B (en) | Etch-rate is controlled using modeling, feedback and impedance matching | |
| WO2010005929A2 (en) | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber | |
| US7982541B2 (en) | AGC circuit | |
| US20030213559A1 (en) | Stabilization of electronegative plasmas with feedback control of RF generator systems | |
| US10755897B2 (en) | Plasma processing apparatus and plasma processing method | |
| JPH0594898A (en) | Plasma processor | |
| KR100964804B1 (en) | Arc detection apparatus and arc monitoring method | |
| CN114446752B (en) | Method and device for detecting electric arc in plasma processing cavity | |
| CN116170932B (en) | Radio frequency plasma source supporting pulse monitoring function | |
| Edelberg et al. | Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radio-frequency biased electrode surfaces | |
| JP2021530864A (en) | Radio frequency pulse matching method and its device, and pulse plasma generation system | |
| WO2022093551A1 (en) | Synchronization of rf pulsing schemes and of sensor data collection | |
| Amsel et al. | Shortening of detector signals with passive filters for pile-up reduction | |
| Maundrill et al. | Electrical measurements of RF-generated plasmas using a driven electrostatic probe technique | |
| JPH0773105B2 (en) | Plasma processing device | |
| US20230282465A1 (en) | Systems and Methods for Analyzing and Intelligently Collecting Sensor Data | |
| CN115219874A (en) | Self-adaptive IGBT saturation tube voltage drop synchronous measurement circuit | |
| CN109673098B (en) | Radio frequency power supply adjusting circuit module and control method thereof | |
| CN114582692A (en) | DC bias control method and plasma processing device | |
| TWI805948B (en) | Method of determining an ion energy for plasma processing of a dielectric substrate and apparatus for plasma processing of a dielectric substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |