CN116169633A - Current protection semiconductor circuit - Google Patents

Current protection semiconductor circuit Download PDF

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Publication number
CN116169633A
CN116169633A CN202310449330.8A CN202310449330A CN116169633A CN 116169633 A CN116169633 A CN 116169633A CN 202310449330 A CN202310449330 A CN 202310449330A CN 116169633 A CN116169633 A CN 116169633A
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China
Prior art keywords
resistor
circuit
transistor
current
bridge arm
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CN202310449330.8A
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CN116169633B (en
Inventor
冯宇翔
谢荣才
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00—Details of emergency protective circuit arrangements
    • H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Conversion In General (AREA)

Abstract

The present invention provides a current protection semiconductor circuit, comprising: a driving circuit, a current sampling circuit, a multi-bridge arm circuit and a current protection circuit of the integrated 6 channels; the current protection circuit comprises an overcurrent protection circuit, a short-circuit protection circuit, a gate control circuit and a gate logic circuit, wherein the first end of the gate control circuit is connected with the second end of the driving circuit, the second end of the gate control circuit is connected with the first end of the overcurrent protection circuit, the first end of the gate logic circuit is connected with the second end of the driving circuit, the second end of the gate logic circuit is connected with the first end of the short-circuit protection circuit, the second end of the overcurrent protection circuit is connected with the second end of the driving circuit, and the second end of the short-circuit protection circuit is also connected with the second end of the multi-bridge arm circuit. The current protection semiconductor circuit is convenient to integrate, good in overcurrent and short-circuit current detection effect, high in anti-interference capability, high in reliability and good in market competitiveness.

Description

Current protection semiconductor circuit
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a current protection semiconductor circuit.
Background
The intelligent power module IPM (Intelligent Power Module) is a power driven product combining power electronics and integrated circuit technology. The intelligent power module integrates the power switch device and the high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like. The intelligent power module receives the control signal of the MCU on one hand, drives the subsequent circuit to work, and sends the state detection signal of the system back to the MCU on the other hand. Compared with the traditional discrete scheme, the intelligent power module gains larger and larger markets by virtue of the advantages of high integration level, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for frequency conversion speed regulation, metallurgical machinery, electric traction, servo driving and frequency conversion household appliances.
A semiconductor circuit is arranged in the existing IPM intelligent power module, power devices of the semiconductor circuit are generally IGBT+FRD or RC-IGBT, and the intelligent power module of the IGBT or RC-IGBT has a current protection function. Current protection is typically integrated within the module with current protection function circuitry, but the current sampling signal is provided by external sampling circuitry. The current is sent to the current protection function circuit through the ITRIP pin.
However, the semiconductor circuit is also provided with other various circuits, PCB layout, circuit wiring and the like around the current sampling circuit, so that the current sampling circuit is easy to be disturbed, and the current detection effect is poor, thereby affecting the normal operation of the current protection function. Particularly, when the IGBT is short-circuited, the IGBT cannot be well protected, so that the IGBT is burnt out, the safety is poor, the reliability is low, and the market competitiveness is poor.
Disclosure of Invention
Aiming at the defects of the related technology, the invention provides a current protection semiconductor circuit which is convenient to integrate, good in overcurrent and short-circuit current detection effect, strong in anti-interference capability, high in reliability and good in market competitiveness.
In order to solve the above technical problems, an embodiment of the present invention provides a current protection semiconductor circuit, including: a driving circuit, a current sampling circuit, a multi-bridge arm circuit and a current protection circuit of the integrated 6 channels; the first end of the driving circuit is connected with the first end of the current sampling circuit, the second end of the driving circuit is connected with the first end of the current protection circuit, the second end of the current sampling circuit is connected with the first end of the multi-bridge arm circuit, and the second end of the multi-bridge arm circuit is connected with the second end of the current protection circuit;
the current protection circuit comprises an overcurrent protection circuit, a short-circuit protection circuit, a gate control circuit and a gate logic circuit, wherein the first end of the gate control circuit is connected with the second end of the driving circuit, the second end of the gate control circuit is connected with the first end of the overcurrent protection circuit, the first end of the gate logic circuit is connected with the second end of the driving circuit, the second end of the gate logic circuit is connected with the first end of the short-circuit protection circuit, the second end of the overcurrent protection circuit is connected with the second end of the driving circuit, and the second end of the short-circuit protection circuit is also connected to the second end of the multi-bridge arm circuit.
Preferably, the over-current protection circuit includes a plurality of short-circuit protection circuits, the first ends of the plurality of over-current protection circuits are connected with the second ends of the gate control circuits, and the first ends of the plurality of short-circuit protection circuits are connected with the second ends of the gate logic circuits.
Preferably, the overcurrent protection circuit includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a resistor R0, a first comparator, a voltage stabilizing transistor, a MOS transistor, a first transistor, a second transistor and a third transistor;
the first end of the first resistor is connected with the first end of the second resistor and then commonly connected with a power supply voltage, the second end of the first resistor is connected with the collector of the third transistor, the second end of the second resistor is connected with the emitter of the third transistor, the emitter of the third transistor is connected with the positive input end of the first comparator, the base of the third transistor is connected with the first end of the third resistor, the second end of the third resistor is connected with the output end of the first comparator, the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the fifth resistor, the first end of the fifth resistor is connected with the negative input end of the first comparator, the second end of the fifth resistor is connected with the emitter of the second transistor and grounded, the negative electrode of the voltage stabilizing tube is connected with the output end of the first comparator, the positive electrode of the voltage stabilizing tube is connected with the first end of the sixth resistor, the second end of the sixth resistor is connected with the base electrode of the second transistor, the collector electrode of the second transistor is respectively connected with the first end of the seventh resistor and the first end of the eighth resistor, the second end of the seventh resistor is connected with the collector electrode of the first transistor, the base electrode of the first transistor is connected with the second end of the eighth resistor, the emitter electrode of the first transistor is respectively connected with the first end of the resistor R0 and the D electrode of the MOS tube, the second end of the resistor R0 is respectively connected with the collector electrode of the first transistor and the second end of the seventh resistor, the S electrode of the MOS tube is connected with the first end of the ninth resistor, the second end of the ninth resistor is grounded, the G pole of the MOS tube is used for being connected with an external logic circuit; the positive input end of the first comparator is also respectively connected with the second end of the short-circuit protection circuit and the second end of the multi-bridge arm circuit.
Preferably, the short-circuit protection circuit includes: a second comparator, a tenth resistor, an eleventh resistor, and a first capacitor;
the output end of the second comparator is connected with the second end of the gate logic circuit, the positive input end of the second comparator is connected with the positive input end of the first comparator, the first end of the tenth resistor is connected with the power supply voltage, the second end of the tenth resistor is respectively connected with the negative input end of the second comparator and the first end of the eleventh resistor, the second end of the eleventh resistor is connected with the first end of the first capacitor and grounded, and the second end of the first capacitor is connected with the positive input end of the second comparator.
Preferably, the current protection circuit further comprises a twelfth resistor and a first diode; the first end of the twelfth resistor is connected with the positive input end of the first comparator, the second end of the twelfth resistor is connected with the positive electrode of the first diode, and the negative electrode of the first diode is connected with the second end of the multi-bridge arm circuit.
Preferably, the multi-bridge arm circuit includes: the current sampling circuit comprises an A bridge arm, a B bridge arm and a C bridge arm, wherein the first end of the A bridge arm, the first end of the B bridge arm and the first end of the C bridge arm are connected and then connected with the second end of the current sampling circuit, and the second end of the A bridge arm, the second end of the B bridge arm and the second end of the C bridge arm are connected and then connected with the negative electrode of the first diode.
Preferably, the current sampling circuit includes: thirteenth resistor, fourteenth resistor, fifteenth resistor, sixteenth resistor, seventeenth resistor, eighteenth resistor, nineteenth resistor, fifth capacitor, and operational amplifier;
the first end of the thirteenth resistor is connected with a power supply, the second end of the thirteenth resistor is respectively connected with the first end of the fourteenth resistor, the positive input end of the operational amplifier and the first end of the fifteenth resistor, the second end of the fifteenth resistor is grounded, the second end of the fifteenth resistor is respectively connected with the first end of the multi-bridge arm circuit and the first end of the nineteenth resistor, the second end of the nineteenth resistor is connected with the first end of the sixteenth resistor and grounded, the second end of the sixteenth resistor is respectively connected with the negative input end of the operational amplifier and the first end of the seventeenth resistor, the second end of the seventeenth resistor is connected with the output end of the operational amplifier, the output end of the operational amplifier is also connected with the first end of the eighteenth resistor, the second end of the eighteenth resistor is respectively connected with the second end of the driving circuit and the first end of the fifth capacitor, and the second end of the fifth capacitor is grounded.
Compared with the related art, the invention has the advantages that the first end of the driving circuit is connected with the first end of the current sampling circuit, the second end of the driving circuit is connected with the first end of the current protection circuit, the second end of the current sampling circuit is connected with the first end of the multi-bridge arm circuit, and the second end of the multi-bridge arm circuit is connected with the second end of the current protection circuit; the current protection circuit comprises an overcurrent protection circuit, a short-circuit protection circuit, a gate control circuit and a gate logic circuit, wherein the first end of the gate control circuit is connected with the second end of the driving circuit, the second end of the gate control circuit is connected with the first end of the overcurrent protection circuit, the first end of the gate logic circuit is connected with the second end of the driving circuit, the second end of the gate logic circuit is connected with the first end of the short-circuit protection circuit, the second end of the overcurrent protection circuit is connected with the second end of the driving circuit, and the second end of the short-circuit protection circuit is also connected with the second end of the multi-bridge arm circuit. The over-current protection is carried out through the over-current protection circuit, the short-circuit protection circuit carries out circuit short-circuit protection, the gate control circuit and the gate logic circuit carry out corresponding circuit control, the over-current protection and short-circuit protection functions are realized through the current protection circuit which integrates and detects the VCE (sat) voltage of the IGBT, the short-circuit fault is effectively and rapidly detected, the intelligent power module of which the IGBT is not damaged is protected, the design of the peripheral circuit of the module is simplified, the anti-interference capability of the module is improved, the reliability of the module application electric control system is improved, and the module has more market competitiveness.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is an overall circuit diagram of a current-protected semiconductor circuit of the present invention;
FIG. 2 is a partial enlarged view I of FIG. 1;
FIG. 3 is a second enlarged view of a portion of FIG. 1;
FIG. 4 is an internal circuit diagram of the driving circuit of the present invention;
FIG. 5 is a circuit diagram of a current-protected semiconductor circuit of the present invention;
FIG. 6 is a circuit diagram of the current protection circuit of the present invention;
FIG. 7 is a circuit diagram of an over-current protection circuit of the present invention;
fig. 8 is a circuit diagram of the short-circuit protection circuit of the present invention.
Detailed Description
The following describes in detail the embodiments of the present invention with reference to the drawings.
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to be illustrative and exemplary of the concepts of the invention and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Example 1
As shown in fig. 1 to 8, the present invention provides a current protection semiconductor circuit 100, which includes: a 6-channel integrated drive circuit 0102, current sampling circuit 0101, multi-bridge arm circuit 0103, and current protection circuit 0104; the first end of the driving circuit 0102 is connected with the first end of the current sampling circuit 0101, the second end of the driving circuit 0102 is connected with the first end of the current protection circuit 0104, the second end of the current sampling circuit 0101 is connected with the first end of the multi-bridge arm circuit 0103, and the second end of the multi-bridge arm circuit 0103 is connected with the second end of the current protection circuit 0104.
As shown in fig. 1, the 6-channel integrated driving circuit 0102 is a driving HVIC, and the driving HVIC is connected to the multi-arm circuit 0103. The port HO1\HO2\HO3\LO1\LO2\LO3 of the HVIC is respectively connected with the port G of the IGBT1\IGBT2\IGBT3\IGBT4\IGBT5\IGBT 6; the C ports of IGBT1, IGBT2 and IGBT3 are connected with the CN ports of FRD1, FRD2 and FRD3 at one point, the 16 th pin P port serving as an IPM is led out, meanwhile, the cathode of the diode D1 is connected with P, the anode of the diode D1 is connected with one end of a resistor R1, the other end of the resistor R1 and one end of a capacitor C1 are connected with SC1 of an HVIC 0102, and the other end of the capacitor C1 is grounded.
The E main emitter port of the IGBT1, the AN port of the FRD1, the C collector terminal of the IGBT4, the CN port of the FRD4, the cathode of the diode D2, one end of the bootstrap capacitor C4 and the U and VS1 of the 6-channel driving circuit 0102 are connected, and the 17 th pin U and VS1 serving as IPM is led out.
The positive electrode of D2 is connected with one end of a resistor R2, the other end of R2 and one end of a capacitor C2 are connected with SC2 of a 6-channel driving circuit 0102, and the other end of the capacitor C2 is grounded.
The E main emitter port of the IGBT2, the AN port of the FRD2, the C collector terminal of the IGBT5, the CN port of the FRD5, the cathode of the diode D3, one end of the bootstrap capacitor C5 and the V and VS2 of the 6-channel driving circuit 0102 are connected, and the 19 th pins V and VS2 serving as IPM are led out.
The positive pole of the diode D3 is connected with one end of a resistor R3, the other end of the resistor R3 and one end of a capacitor C3 are connected with SC3 of the HVIC 0102, and the other end of the capacitor C3 is grounded.
The E main emitter port of the IGBT3, the AN port of the FRD3, the C collector terminal of the IGBT6, the CN port of the FRD6, the cathode of the diode D4, one end of the bootstrap capacitor C6 and the W and VS3 of the 6-channel driving circuit 0102 are connected, and the 21 st leg W and VS3 serving as IPM is led out.
The positive pole of the diode D4 is connected with one end of a resistor R4, the other end of the resistor R4 and one end of a capacitor C4 are connected with SC4 of a 6-channel driving circuit 0102, and the other end of the capacitor C4 is grounded.
The E main emission end ports of the IGBT4, the IGBT5 and the IGBT6 are respectively connected with the AN ports of the FRD4, the FRD5 and the FRD6, and the 13 th foot UN, the 14 th foot VN and the 15 th foot WN ports which are respectively used as IPM are led out; VB1, VB2 and VB3 of the 6-channel driving circuit 0102 are respectively connected with the other ends of bootstrap capacitors C4, C5 and C6, and the 18 th, 20 th and 22 nd pins VB1, VB2 and VB3 ports serving as IPM are led out.
HIN1 is led out as a 10 th pin HIN1 port of the IPM; HIN2 is led out as 9 th pin HIN2 port of IPM; HIN3 leads out an 8 th pin HIN3 port as an IPM; LIN1 leads out a 7 th pin LIN1 port as an IPM; LIN2 is led out of a 6 th pin LIN2 port serving as an IPM; LIN3 leads out a 5 th pin LIN3 port as an IPM; TH1 and TH2 of the 6-channel driving circuit 0102 are respectively led out to serve as FLT/EN of the 1 st pin TH1, the 2 nd pin TH1 and the TH2 port 6-channel driving circuit 0102 of the IPM and led out to serve as a 3 rd pin FLT/EN port of the IPM; the RCIN of the 6-channel driving circuit 0102 is led out as the 4 th pin RCIN port of the IPM; VCC leads out the 11 th pin VDD port as IPM; GND is led out as the 12 th pin GND port of the IPM.
As shown in fig. 4, the 6-channel driving circuit 0102 includes a high-side driving circuit 3 channel and a low-side driving circuit 3 channel. The high-side drive circuit internally comprises a high-side undervoltage protection circuit and a bootstrap circuit, so that a high-side drive undervoltage protection function and a bootstrap power supply function are realized; the high-side driving circuit and the low-side driving circuit are connected with an interlocking and dead zone circuit to realize interlocking and dead zone functions; the power supply circuit comprises a 5V LDO circuit and a 1.2V BANDGAP circuit, and supplies 5V voltage to all circuits and external circuits in the HVIC and stable 1.2V voltage reference to the HVIC and the external circuits; the power supply circuit is connected with the power supply under-voltage protection circuit to realize the power supply under-voltage protection function.
The HVIC also comprises an enabling circuit inside to realize an enabling function; the overvoltage protection circuit realizes an overvoltage protection function; the temperature protection circuit realizes a temperature protection function; the error reporting circuit outputs error reporting signals to the outside when under-voltage, over-temperature and other conditions occur in the circuit.
In this embodiment, as shown in fig. 5-8, the current protection circuit 0104 includes an overcurrent protection circuit 0502, a short-circuit protection circuit 0506, a gate control circuit 0505, and a gate logic circuit 0511, wherein a first end of the gate control circuit 0505 is connected to a second end of the driving circuit 0102, a second end of the gate control circuit 0505 is connected to a first end of the overcurrent protection circuit 0502, a first end of the gate logic circuit 0511 is connected to a second end of the driving circuit 0102, a second end of the gate logic circuit 0511 is connected to a first end of the short-circuit protection circuit 0506, a second end of the overcurrent protection circuit 0502 is connected to a second end of the driving circuit 0102, and a second end of the short-circuit protection circuit 0506 is also connected to a second end of the multi-bridge circuit 0103. By connecting the first end of the driving circuit 0102 with the first end of the current sampling circuit 0101, the second end of the driving circuit 0102 with the first end of the current protection circuit 0104, the second end of the current sampling circuit 0101 with the first end of the multi-bridge arm circuit 0103, and the second end of the multi-bridge arm circuit 0103 with the second end of the current protection circuit 0104; the overcurrent protection is carried out through the overcurrent protection circuit 0502, the circuit short-circuit protection is carried out through the short-circuit protection circuit 0506, corresponding circuit control is carried out through the gate control circuit 0505 and the gate logic circuit 0511, the overcurrent protection and short-circuit protection functions are realized through the current protection circuit 0104 for integrally detecting the VCE (sat) voltage of the IGBT, the short-circuit fault is effectively and rapidly detected, the intelligent power module with the IGBT not damaged is protected, the design of a peripheral circuit of the module is simplified, the anti-interference capability of the module is improved, the reliability of an electric control system applied to the module is improved, and the module has more market competitiveness.
In this embodiment, as shown in fig. 6 to 8, the over-current protection circuit 0502 includes a plurality of short-circuit protection circuits 0506, a plurality of first ends of the over-current protection circuits 0502 are connected to the second ends of the gate control circuits, and a plurality of first ends of the short-circuit protection circuits 0506 are connected to the second ends of the gate logic circuits.
Wherein the overcurrent protection circuits 0502 include 4; the short-circuit protection circuit 0506 includes 4. The current protection circuit 0104 is divided into four paths, namely SC1, SC2, SC3 and SC4, SO1 is the short-circuit current protection of the intelligent power upper bridge IGBT1, IGBT2 and IGBT3, SC2, SC3 and SC4 are the short-circuit current protection of the intelligent power lower bridge IGBT4, IGBT5 and IGBT6 respectively, and the short-circuit protection function is realized by detecting the VCE (sat) voltage of the IGBT and comparing in the driving IC.
In this embodiment, as shown in fig. 6 to 7, the overcurrent protection circuit 0502 includes: the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, the resistor R0, the first comparator 0501, the voltage regulator Z1, the MOS transistor, the first transistor Q4, the second transistor Q5, and the third transistor Q6.
The first end of the first resistor R1 is connected with the first end of the second resistor R2 and then commonly connected with a power supply voltage, the second end of the first resistor R1 is connected with the collector of the third transistor Q6, the second end of the second resistor R2 is connected with the emitter of the third transistor Q6, the emitter of the third transistor Q6 is connected with the positive input end of the first comparator 0501, the base of the third transistor Q6 is connected with the first end of the third resistor R3, the second end of the third resistor R3 is connected with the output end of the first comparator 0501, the first end of the fourth resistor R4 is connected with the power supply voltage, the second end of the fourth resistor R4 is connected with the first end of the fifth resistor R5, the first end of the fifth resistor R5 is connected with the negative input end of the first comparator 0501, the second end of the fifth resistor R5 is connected with the emitter of the second transistor Q5 and then grounded, the negative electrode of the voltage stabilizing tube Z1 is connected with the output end of the first comparator 0501, the positive electrode of the voltage stabilizing tube Z1 is connected with the first end of the sixth resistor R6, the second end of the sixth resistor R6 is connected with the base electrode of the second transistor Q5, the collector electrode of the second transistor Q5 is respectively connected with the first end of the seventh resistor R7 and the first end of the eighth resistor R8, the second end of the seventh resistor R7 is connected with the collector electrode of the first transistor Q4, the base electrode of the first transistor Q4 is connected with the second end of the eighth resistor R8, the emitter electrode of the first transistor Q4 is respectively connected with the first end of the resistor R0 and the D electrode of the MOS tube, the second end of the resistor R0 is respectively connected with the collector electrode of the first transistor Q4 and the second end of the seventh resistor R7, the S electrode of the MOS tube is connected with the first end of the ninth resistor R9, the second end of the ninth resistor R9 is grounded, and the G electrode of the MOS tube is used for being connected with an external logic circuit; the positive input end of the first comparator 0501 is also connected to the second end of the short-circuit protection circuit and the second end of the multi-bridge arm circuit 0103 respectively.
Specifically, the current protection semiconductor circuit 100 has 4 overcurrent protection circuits OC1-OC4 and 4 short-circuit protection circuits SC1-SC4 therein, the overcurrent protection circuit OC1 and the short-circuit protection circuit SC1 are the current protection circuits 0104 of the IPM three-phase upper bridge IGBTs of the multi-bridge arm circuit 0103, and the overcurrent protection circuits OC2-OC4 and the short-circuit protection circuits SC2-4 are the current protection circuits 0104 of the IPM three-phase lower bridge IGBTs 4-6 of the multi-bridge arm circuit 0103, respectively.
In this embodiment, as shown in fig. 6 to 8, the short-circuit protection circuit 0506 includes: a second comparator 0510, a tenth resistor R10, an eleventh resistor R11, and a first capacitor C1; the output end of the second comparator 0510 is connected with the second end of the gate logic circuit 0511, the positive input end of the second comparator 0510 is connected with the positive input end of the first comparator 0501, the first end of the tenth resistor R10 is connected with 15V of the power supply voltage, the second end of the tenth resistor R10 is respectively connected with the negative input end of the second comparator 0510 and the first end of the eleventh resistor R11, the second end of the eleventh resistor R11 is connected with the first end of the first capacitor C1 and grounded, and the second end of the first capacitor C1 is connected with the positive input end of the second comparator 0510.
Specifically, the positive input end of the second comparator 0510 is connected with the point E, one end of the tenth resistor R10 is connected with 15V, the other end of the tenth resistor R10 and one end of the eleventh resistor R11 are connected with the negative input end of the second comparator 0510, the connection point is H, and the other end of the eleventh resistor R11 is grounded.
The short-circuit protection circuit SC1 operates as follows:
the negative input end of the second comparator 0510 is provided with a short-circuit protection voltage threshold value H, the voltage threshold value is larger than the overcurrent protection voltage threshold value I by a little, when the IGBT is short-circuited, the current rises to more than 4 times of rated current, the point C voltage Vce rises rapidly, the point E voltage rises rapidly, when the point E voltage is larger than the short-circuit protection voltage threshold value H, the second comparator 0510 outputs a low level, the gate-inputting logic circuit 0511 turns off driving signals of all the IGBTs of the IPM, and the short-circuited IGBTs and the whole semiconductor circuit are protected.
0507. 0508 and 0509 are short-circuit protection circuits SC2, SC3 and SC4, and the circuit diagram and operation principle thereof are the same as those of SC1, and the description thereof will not be repeated here.
In this embodiment, as shown in fig. 5-8, the current protection circuit 0104 further includes a twelfth resistor R12 and a first diode D1; a first end of the twelfth resistor R12 is connected to the positive input end of the first comparator 0501, a second end of the twelfth resistor R12 is connected to the positive electrode of the first diode D1, and a negative electrode of the first diode D1 is connected to the second end of the multi-bridge arm circuit 0103.
Specifically, the C pole of the IPM three-phase upper bridge IGBT1-3 is connected to the negative pole of the first diode D1, the connection point is C, the positive pole of the first diode D1 is connected to the second end of the twelfth resistor R12, the first end of the twelfth resistor R12, the second end of the first capacitor C1, the second end of the second resistor R2, and the E pole of the third transistor Q6 are connected to the positive input end of the first comparator 0501, and the connection point is E. The C pole of the third transistor Q6 is connected with the second end of the first resistor R1, the first end of the first resistor R1 and the first end of the resistor R2 are connected to the power supply voltage 15V, one end of the fourth resistor R4 is connected with 15V, the other end of the fourth resistor R4 and one end of the fifth resistor R5 are connected with the negative input end of the first comparator 0501, and the other end of the fifth resistor R5 is grounded. The output end of the first comparator 0501 and the negative electrode of the voltage stabilizing tube Z1 are connected with one end of the third resistor R3, and the connection point is J. The other end of the third resistor R3 is connected with the B pole of the third transistor Q6, the positive pole of the voltage stabilizing tube Z1 is connected with one end of the sixth resistor R6, the other end of the sixth resistor R6 is connected with the B pole of the second transistor Q5, the E pole of the second transistor Q5 is grounded, the C pole of the second transistor Q5 is connected with one end of the seventh resistor R7 and one end of the eighth resistor R8, the other end of the eighth resistor R8 is connected with the B pole of the first transistor Q4, and the C pole of the first transistor Q4, the other end of the seventh resistor R7 and one end of the resistor R0 are connected with 15V. The other end of the resistor R0 and the electrode E of the first transistor Q4 are connected with the drain electrode D of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source electrode S of the MOS tube is connected with one end of a ninth resistor R9, and then the source electrode S of the MOS tube is connected with the input end of the gate control circuit 0505.
The working principle of the overcurrent protection circuit OC1 is as follows:
the gate voltage VG is reduced for overcurrent protection, the gate voltage is reduced immediately when the overcurrent of the device is detected, but the device is still kept on, so that the detection time is prolonged, and whether the circuit really generates the overcurrent is judged. The specific method is that after the fault signal is detected, the gate voltage is reduced to limit the fault current, the current is limited to a smaller value, the power loss of the device during the fault is reduced, and the short-circuit resistance time of the device is prolonged. In the time delay, if the fault signal disappears, the driving circuit can automatically recover to the normal working state, so that the anti-interference capability of the circuit is greatly enhanced.
Normal working state; when the MOSFET is turned off, the voltage at the point B is 15V, and the IGBT is in an off state. When the MOSFET is turned on, the point F and the point B are turned on, the first transistor Q4 is turned on, and the voltages of the point F and the point B rise to +15V to drive the IGBT to be turned on. At this time, the second transistor Q5 is turned off.
An overcurrent protection state; when the IGBT is over-current, the voltage of the point C rises, the voltage of the point E rises, when the voltage of the point C exceeds a set value of +11V, the voltage of the point D1 is cut off, the voltage of the point E exceeds +11V, the comparator outputs a high level, the second transistor Q5 is conducted, the potential drop of the point K is 0V, the Q4 pipe is cut off, and the R0 is connected into a loop, so that the voltage drop of the point B is +10V. And the grid voltage is reduced. When the gate voltage is reduced to +10V, the over-current allowable time can be prolonged to more than 10us, at the moment, the third transistor Q6 is conducted, +15V charges C through the third transistors Q6 and R1, and the voltage at the E point is continuously increased.
If the IGBT is false overcurrent, the potential of the point C drops, the point E discharges through the first diode D1, the potential drops, the first comparator 0501 resumes outputting the low level, the second transistor Q5 is turned off, the first transistor Q4 is turned on, the resistor R0 is short-circuited, the potential of the point B rises to +15v, and the circuit returns to the normal driving state.
0502. 0503 and 0504 are overcurrent protection circuits OC2, OC3 and OC4, and the circuit diagrams and the operation principle thereof are the same as those of OC1, and will not be repeated here.
In this embodiment, as shown in fig. 1-8, the multi-leg circuit 0103 includes: the current sampling circuit comprises an A bridge arm, a B bridge arm and a C bridge arm, wherein the first end of the A bridge arm, the first end of the B bridge arm and the first end of the C bridge arm are connected and then connected with the second end of the current sampling circuit 0101, and the second end of the A bridge arm, the second end of the B bridge arm and the second end of the C bridge arm are connected and then connected with the negative electrode of the first diode D1.
In this embodiment, as shown in fig. 5, the current sampling circuit 0101 includes: thirteenth resistor R22, fourteenth resistor R23, fifteenth resistor R24, sixteenth resistor R25, seventeenth resistor R26, eighteenth resistor R27, nineteenth resistor R28, fifth capacitor C5, and operational amplifier 0105.
Specifically, the first end of the thirteenth resistor R22 is connected to the power supply 5V, the second end of the thirteenth resistor R22 is connected to the first end of the fourteenth resistor R23, the positive input end of the operational amplifier 0105, and the first end of the fifteenth resistor R24, the second end of the fourteenth resistor R23 is grounded, the second end of the fifteenth resistor R24 is connected to the first end of the multi-bridge arm circuit 0103 and the first end of the nineteenth resistor R28, the second end of the nineteenth resistor R28 is connected to the first end of the sixteenth resistor R25 and grounded, the second end of the sixteenth resistor R25 is connected to the negative input end of the operational amplifier 0105 and the first end of the seventeenth resistor R26, the second end of the seventeenth resistor R26 is connected to the output end of the operational amplifier 0105, the output end of the operational amplifier 0105 is further connected to the first end of the eighteenth resistor R27, and the second end of the eighteenth resistor R27 is connected to the second end of the fifth capacitor C5 and the fifth capacitor C5. The E pole of the bridge arm IGBT under the three-phase full bridge of the current protection semiconductor circuit 100 is connected in series with a high-precision sampling resistor, the current of a load is detected, a current signal is converted into a voltage signal, the voltage signal is amplified by an operational amplifier 0105 of a current sampling circuit 0101, and then the voltage signal is input into an overcurrent protection circuit of a driving IC in the module, and the overcurrent protection circuit judges whether overcurrent or short circuit exists according to the collected current signal to protect the IGBT from damage.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.

Claims (7)

1. A current-protecting semiconductor circuit, comprising: a driving circuit, a current sampling circuit, a multi-bridge arm circuit and a current protection circuit of the integrated 6 channels; the first end of the driving circuit is connected with the first end of the current sampling circuit, the second end of the driving circuit is connected with the first end of the current protection circuit, the second end of the current sampling circuit is connected with the first end of the multi-bridge arm circuit, and the second end of the multi-bridge arm circuit is connected with the second end of the current protection circuit;
the current protection circuit comprises an overcurrent protection circuit, a short-circuit protection circuit, a gate control circuit and a gate logic circuit, wherein the first end of the gate control circuit is connected with the second end of the driving circuit, the second end of the gate control circuit is connected with the first end of the overcurrent protection circuit, the first end of the gate logic circuit is connected with the second end of the driving circuit, the second end of the gate logic circuit is connected with the first end of the short-circuit protection circuit, the second end of the overcurrent protection circuit is connected with the second end of the driving circuit, and the second end of the short-circuit protection circuit is also connected to the second end of the multi-bridge arm circuit.
2. The current-protection semiconductor circuit according to claim 1, wherein the overcurrent protection circuit includes a plurality of the short-circuit protection circuits, the plurality of the overcurrent protection circuits having first ends connected to the second end of the gate control circuit, and the plurality of the short-circuit protection circuits having first ends connected to the second end of the gate logic circuit.
3. The current-protecting semiconductor circuit according to claim 1, wherein the overcurrent protection circuit includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a resistor R0, a first comparator, a voltage stabilizing transistor, a MOS transistor, a first transistor, a second transistor and a third transistor;
the first end of the first resistor is connected with the first end of the second resistor and then commonly connected with a power supply voltage, the second end of the first resistor is connected with the collector of the third transistor, the second end of the second resistor is connected with the emitter of the third transistor, the emitter of the third transistor is connected with the positive input end of the first comparator, the base of the third transistor is connected with the first end of the third resistor, the second end of the third resistor is connected with the output end of the first comparator, the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the fifth resistor, the first end of the fifth resistor is connected with the negative input end of the first comparator, the second end of the fifth resistor is connected with the emitter of the second transistor and grounded, the negative electrode of the voltage stabilizing tube is connected with the output end of the first comparator, the positive electrode of the voltage stabilizing tube is connected with the first end of the sixth resistor, the second end of the sixth resistor is connected with the base electrode of the second transistor, the collector electrode of the second transistor is respectively connected with the first end of the seventh resistor and the first end of the eighth resistor, the second end of the seventh resistor is connected with the collector electrode of the first transistor, the base electrode of the first transistor is connected with the second end of the eighth resistor, the emitter electrode of the first transistor is respectively connected with the first end of the resistor R0 and the D electrode of the MOS tube, the second end of the resistor R0 is respectively connected with the collector electrode of the first transistor and the second end of the seventh resistor, the S electrode of the MOS tube is connected with the first end of the ninth resistor, the second end of the ninth resistor is grounded, the G pole of the MOS tube is used for being connected with an external logic circuit; the positive input end of the first comparator is also respectively connected with the second end of the short-circuit protection circuit and the second end of the multi-bridge arm circuit.
4. The current-protecting semiconductor circuit according to claim 3, wherein the short-circuit protecting circuit includes: a second comparator, a tenth resistor, an eleventh resistor, and a first capacitor;
the output end of the second comparator is connected with the second end of the gate logic circuit, the positive input end of the second comparator is connected with the positive input end of the first comparator, the first end of the tenth resistor is connected with the power supply voltage, the second end of the tenth resistor is respectively connected with the negative input end of the second comparator and the first end of the eleventh resistor, the second end of the eleventh resistor is connected with the first end of the first capacitor and grounded, and the second end of the first capacitor is connected with the positive input end of the second comparator.
5. The current-protecting semiconductor circuit according to claim 3, wherein the current-protecting circuit further comprises a twelfth resistor and a first diode; the first end of the twelfth resistor is connected with the positive input end of the first comparator, the second end of the twelfth resistor is connected with the positive electrode of the first diode, and the negative electrode of the first diode is connected with the second end of the multi-bridge arm circuit.
6. The current-protecting semiconductor circuit of claim 5, wherein the multi-leg circuit comprises: the current sampling circuit comprises an A bridge arm, a B bridge arm and a C bridge arm, wherein the first end of the A bridge arm, the first end of the B bridge arm and the first end of the C bridge arm are connected and then connected with the second end of the current sampling circuit, and the second end of the A bridge arm, the second end of the B bridge arm and the second end of the C bridge arm are connected and then connected with the negative electrode of the first diode.
7. The current-protecting semiconductor circuit of claim 1, wherein the current sampling circuit comprises: thirteenth resistor, fourteenth resistor, fifteenth resistor, sixteenth resistor, seventeenth resistor, eighteenth resistor, nineteenth resistor, fifth capacitor, and operational amplifier;
the first end of the thirteenth resistor is connected with a power supply, the second end of the thirteenth resistor is respectively connected with the first end of the fourteenth resistor, the positive input end of the operational amplifier and the first end of the fifteenth resistor, the second end of the fifteenth resistor is grounded, the second end of the fifteenth resistor is respectively connected with the first end of the multi-bridge arm circuit and the first end of the nineteenth resistor, the second end of the nineteenth resistor is connected with the first end of the sixteenth resistor and grounded, the second end of the sixteenth resistor is respectively connected with the negative input end of the operational amplifier and the first end of the seventeenth resistor, the second end of the seventeenth resistor is connected with the output end of the operational amplifier, the output end of the operational amplifier is also connected with the first end of the eighteenth resistor, the second end of the eighteenth resistor is respectively connected with the second end of the driving circuit and the first end of the fifth capacitor, and the second end of the fifth capacitor is grounded.
CN202310449330.8A 2023-04-25 2023-04-25 Current protection semiconductor circuit Active CN116169633B (en)

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