CN116165582A - Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method - Google Patents

Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method Download PDF

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Publication number
CN116165582A
CN116165582A CN202310135918.6A CN202310135918A CN116165582A CN 116165582 A CN116165582 A CN 116165582A CN 202310135918 A CN202310135918 A CN 202310135918A CN 116165582 A CN116165582 A CN 116165582A
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layer
ferromagnetic layer
film layer
magneto
ferromagnetic
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Inventor
张婕
聂天晓
李竞
王航天
谢魏然
孙芸
王梓力
高凡
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Hangzhou Innovation Research Institute of Beihang University
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Hangzhou Innovation Research Institute of Beihang University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

The invention discloses a magneto-resistance sensor, a magneto-resistance sensor test circuit and a preparation method, and relates to the field of magneto-resistance sensors, wherein the magneto-resistance sensor comprises: a substrate, a film layer, and an electrode; the film layer and the electrode are both positioned on the substrate; the electrodes are positioned at the left side and the right side of the film layer and are contacted with the film layer; the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer; the ferromagnetic layer and the non-ferromagnetic layer are arranged up and down, and the interfaces are contacted; the non-ferromagnetic layer has a spin hall angle greater than a set value; the ferromagnetic layer is used for obtaining magnetization intensity and generating magnetization direction when being magnetized by an external magnetic field; the non-ferromagnetic layer is used for generating spin polarized current; the electrodes are used for reading the resistances at two ends of the film layer to obtain the magnitude and the direction of the external magnetic field. The invention can read the direction and the size of the external magnetic field at the same time, and has simple structure and small device size.

Description

Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method
Technical Field
The invention relates to the field of magnetic resistance sensors, in particular to a magnetic resistance sensor, a magnetic resistance sensor testing circuit and a preparation method.
Background
The principle of conventional magnetic sensors is based on the magneto-resistive effect. The principle of the conventional magneto-resistive sensor is mainly based on the anisotropic magneto-resistive effect (AMR), the giant magneto-resistive effect (GMR) or the tunnel magneto-resistive effect (TMR). The anisotropic magnetoresistance effect refers to the dependence of the resistance of a ferromagnetic material on the angle between the current and the magnetic field. If the magnetization direction is perpendicular to the direction of the applied current, the resistance of the device will decrease; if the magnetization direction is parallel to the direction of the applied current, the device resistance increases. In general, a magnetic sensor based on anisotropic magnetoresistance is formed by four circuit devices into a wheatstone bridge, and in a measurement range, an output voltage is proportional to an intensity of an applied magnetic field. Giant magnetoresistance devices generally consist of three thin films, a pinned layer, a nonmagnetic layer, and a free layer, respectively, wherein the magnetization direction of the ferromagnetic pinned layer is fixed, and the magnetization direction of the ferromagnetic free layer can be changed by an externally applied magnetic field. When the magnetization directions of the free layer and the pinned layer are the same, the device magnetoresistance is small, and when the magnetization directions are opposite, the device magnetoresistance is large. The principle and effect of the tunnel magneto-resistance effect device are similar to those of the giant magneto-resistance effect device, except that the non-magnetic layer in the middle is changed into an insulating layer, the resistance of the device is changed by utilizing quantum tunneling effect, and a test circuit based on the magneto-resistance effect can be referred to a document with publication number CN111722164A, and a GMR/TMR bridge circuit test method is given in the document.
Magnetic sensors based on anisotropic magneto-resistance can only read the magnitude of the magnetic field, but cannot read the direction of the magnetic field. Whereas magnetic tunnel junctions based on giant magnetoresistance effect or tunneling magnetoresistance effect consist of a multi-layer stack comprising 20-30 different layers, the thickness of which layers has to be controlled with sub-nanometer precision. If mass production is required, it is difficult to ensure uniformity. And because the number of layers is too many, the industrial preparation is complex, the technical requirement is high, and the size of the device is not beneficial to being reduced.
Disclosure of Invention
Based on the above, the embodiment of the invention provides a magnetic resistance sensor, a magnetic resistance sensor testing circuit and a preparation method, wherein the magnetic detection is performed through a spin Hall magnetic resistance effect, the direction and the size of an external magnetic field can be read simultaneously, the structure is simple, and the size of a device is small.
In order to achieve the above object, the embodiment of the present invention provides the following solutions:
a magnetoresistive sensor, comprising: a substrate, a film layer, and an electrode; the film layer and the electrode are both positioned on the substrate; the electrodes are positioned on the left side and the right side of the film layer and are in contact with the film layer;
the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer; the ferromagnetic layer and the non-ferromagnetic layer are arranged up and down, and the interfaces are in contact; the non-ferromagnetic layer has a spin hall angle greater than a set value;
the ferromagnetic layer is used for obtaining magnetization intensity and generating magnetization direction when being magnetized by an external magnetic field;
the non-ferromagnetic layer is used for generating spin polarized current;
the electrodes are used for reading the resistances at two ends of the film layer so as to obtain the magnitude and the direction of the external magnetic field.
Optionally, the magnetoresistive sensor further comprises: a buffer layer; the buffer is located between the substrate and the film layer.
Optionally, the magnetoresistive sensor further comprises: a protective layer; the upper surface of the film layer is provided with the protective layer.
Optionally, the substrate, the non-ferromagnetic layer and the ferromagnetic layer are arranged sequentially from bottom to top.
Optionally, the substrate, the ferromagnetic layer and the non-ferromagnetic layer are arranged sequentially from bottom to top.
Optionally, the material of the non-ferromagnetic layer is a topological insulator, a topological semi-metal or a heavy metal.
Optionally, the material of the ferromagnetic layer is a two-dimensional ferromagnetic material or a ferromagnetic metal.
The invention also provides a preparation method of the magnetic resistance sensor, which is used for preparing the magnetic resistance sensor and comprises the following steps:
growing a film layer on a substrate; the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer;
etching downwards to the substrate at the left side and the right side of the film layer, and plating electrodes in the etching area to obtain the magnetic resistance sensor.
Optionally, growing a buffer layer between the substrate and the film layer; and growing a protective layer on the film layer.
The invention also provides a magneto-resistance sensor test circuit, comprising: the four magneto-resistive sensors form a Wheatstone bridge; the current directions of the magneto-resistance sensors at the same position of the two arms of the Wheatstone bridge are opposite, and the current directions of the magneto-resistance sensors on the same arm of the Wheatstone bridge are opposite.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the embodiment of the invention provides a magneto-resistance sensor, a magneto-resistance sensor test circuit and a preparation method, wherein the magneto-resistance sensor comprises the following components: a substrate, a film layer, and an electrode; the film layer and the electrode are both positioned on the substrate; the electrodes are positioned at the left side and the right side of the film layer and are contacted with the film layer; the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer; the ferromagnetic layer and the non-ferromagnetic layer are arranged up and down, and the interfaces are contacted; the non-ferromagnetic layer has a spin hall angle greater than a set value. The invention adopts spin Hall magnetic resistance effect to carry out magnetic detection, the film layer structure only needs two layers, the direction and the size of an external magnetic field can be conveniently and simultaneously read, and meanwhile, the film layer structure is simple, is suitable for the existing semiconductor industry, can reduce the size of a device and detect a micro magnetic field in a small scale range.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a magnetoresistive sensor provided in an embodiment of the invention;
FIG. 2 is a schematic diagram of a magnetic sensor for reading according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a magnetic sensor test circuit according to an embodiment of the present invention.
Symbol description:
protective layer-1, ferromagnetic layer-2, nonferromagnetic layer-3, buffer layer-4, substrate-5, electrode-6.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, the magnetoresistive sensor of the present embodiment includes: a substrate 5, a film layer and an electrode 6; the membrane layer and the electrode 6 are both positioned on the substrate 5; the electrodes 6 are positioned on the left and right sides of the membrane layer and are in contact with the membrane layer.
The film layer comprises: a ferromagnetic layer 2 and a non-ferromagnetic layer 3; the ferromagnetic layer 2 and the non-ferromagnetic layer 3 are arranged up and down, and the interfaces are in contact; the non-ferromagnetic layer 3 has a spin hall angle greater than a set value.
The substrate 5 is used for supporting the whole structure and guaranteeing the whole quality of the device film growth; the ferromagnetic layer 2 is adapted to obtain a magnetization when magnetized by an external magnetic field, resulting in an in-plane magnetization direction. The non-ferromagnetic layer 3 is used to generate spin polarized current. The electrode 6 is used for connecting the film layer into a circuit, and reading the resistance at two ends of the film layer to obtain the magnitude and the direction of the external magnetic field.
In one example, still referring to fig. 1, the magnetoresistive sensor further includes: a buffer layer 4; the buffer is located between the substrate 5 and the membrane layer. The buffer layer 4 is used to reduce defects (such as lattice mismatch between the substrate 5 and the film layer), or to improve growth quality (such as quality of film layer interface), and can be omitted in actual production according to actual situations.
In one example, still referring to fig. 1, the magnetoresistive sensor further includes: a protective layer 1; the upper surface of the film layer is provided with the protective layer 1. The protective layer 1 is used to protect the magnetic sensor from external influences, such as oxidation of the device film by air.
In one example, the substrate 5, the non-ferromagnetic layer 3, and the ferromagnetic layer 2 are arranged in this order from bottom to top, as shown in fig. 1. The substrate 5, the ferromagnetic layer 2 and the non-ferromagnetic layer 3 may also be arranged in this order from bottom to top. It can be seen that the ferromagnetic layer 2 and the non-ferromagnetic layer 3 can be switched in position, the position affecting only the spin accumulation direction at the interface.
In one example, the easy magnetization direction of the ferromagnetic layer 2 is in the thin film plane, and the ferromagnetic layer 2 has remanence at zero magnetic field. The non-ferromagnetic layer 3 has higher spin polarization, and the interface contact between the non-ferromagnetic layer 3 and the ferromagnetic layer 2 is tight, so that fewer defects are generated. The measured magnetic field direction is in the plane of the ferromagnetic layer 2 and perpendicular to the current direction. When a current is applied across the electrodes 6, the magnetization of the ferromagnetic layer 2 is proportional to the strength of the external magnetic field, which changes the magnitude of the reluctance.
In one example, the non-ferromagnetic layer 3 is used to generate spin polarized current at the interface by spin hall effect, etc., and the material of the non-ferromagnetic layer 3 is a topological insulator (such as Bi 2 Se 3 、Bi 2 Te 3 、Bi x Sb 1-x 、Sb 2 Te 3 、(Bi x Sb 1-x ) 2 Te 3 And alloys thereof, etc.), topological semi-metals (WTe 2 、WSe 2 、PtSe 2 、PtTe 2 Etc.) or heavy metals (W, ta, pt, etc.), which have a large spin hall angle. Wherein the spin hall angle may be positive or negative, which affects only the surface spin flow accumulation direction.
The ferromagnetic layer 2 is usually made of soft magnetic material, and its magnetization easy axis direction is in the thin film plane and perpendicular to the current direction. The ferromagnetic layer 2 is made of a two-dimensional ferromagnetic material (Fe x GeTe 2 、CrTe 2 ) Or ferromagnetic metals (Co, fe, ni, etc. and alloys thereof). In addition, the ferromagnetic layer 2 may also employ other materials having spin-polarized properties, such as ferromagnetic conductors, ferromagnetic insulators, magnetic topological insulators, and the like.
The material of the substrate 5 is a semiconductor or insulator material.
The magneto-resistive sensor of the present embodiment is a magneto-resistive sensor based on unidirectional spin hall effect, the magneto-resistive sensor comprising: a non-ferromagnetic layer 3 having a large spin hall angle, which can generate spin polarized current at the interface; the ferromagnetic layer 2 has an easy axis of magnetization in the in-plane short side direction. Wherein the external magnetic field can change the magnetization direction and magnetization intensity of the ferromagnetic layer 2, and the magnetization intensity of the ferromagnetic layer 2 can cause the resistance of the whole device to be different, thereby realizing the function of reading the external magnetic field.
The read principle of the magnetoresistive sensor of this embodiment is as follows:
referring to fig. 2, the magnetization direction and the magnetization intensity of the ferromagnetic layer 2 are changed according to the applied external magnetic field, the magnetization direction and the external magnetic field direction are the same, and the magnetization intensity is proportional to the magnitude of the applied magnetic field in the measurement range. When the magnetic field measurement is carried out by the magnetic resistance sensor, current is applied between the electrodes 6 at the two ends of the device, at the moment, the resistances at the two ends of the device are different due to the unidirectional spin Hall magnetic resistance effect, and the magnitude and the direction of an external magnetic field can be read by reading out the different resistances. Taking Pt/Co heterojunction as an example, when current is applied in the y-axis direction, spin accumulation in the-x direction is generated at the interface, and if the external magnetic field is also in the-x direction, the resistance of the device is measured in the x direction to be in a low-resistance state, as shown in part (a) of fig. 2; if the external magnetic field direction is also the x-direction, the resistance of the device is measured in the x-direction as a high resistance state, as shown in part (b) of fig. 2.
The invention also provides a preparation method of the magnetic resistance sensor, which is used for preparing the magnetic resistance sensor and comprises the following steps:
growing a film layer on the substrate 5; the film layer comprises: a ferromagnetic layer 2 and a non-ferromagnetic layer 3.
Etching downwards to the substrate 5 at the left side and the right side of the film layer, and plating the electrode 6 in the etching area to obtain the magnetic resistance sensor.
In one example, a buffer layer 4 is grown between the substrate 5 and the film layer; a protective layer 1 is grown on the film layer.
Specifically, a buffer layer 4, a nonmagnetic layer, a ferromagnetic layer 2 and a protective layer 1 are continuously grown on a substrate 5, corresponding patterns are prepared by using a photoetching method, redundant materials are removed by an etching method and etched to the substrate 5, and electrodes 6 are plated at two ends of a device to be connected with other magnetic resistance sensors, so that a test circuit is formed.
The invention also provides a magneto-resistance sensor test circuit, comprising: the four magneto-resistive sensors form a Wheatstone bridge; the current directions of the magneto-resistance sensors at the same position of the two arms of the Wheatstone bridge are opposite, and the current directions of the magneto-resistance sensors on the same arm of the Wheatstone bridge are opposite.
Specifically, referring to fig. 3, the magneto-resistive sensor testing circuit is a wheatstone bridge composed of four magneto-resistive sensors (R1, R2, R3 and R4 respectively) with the same specification, and the adopted devices are usually obtained by micromachining the same piece of film material, and the characteristics are identical. When the current or magnetic field is opposite, the unidirectional spin hall magnetic resistance is opposite, and the anisotropic magnetic resistance is unchanged. To enhance the effect of unidirectional spin hall magnetoresistance, the device relative position and current direction are designed as shown in fig. 3, where the power supply direction may be reversed. At this time, the magnetic resistance directions of R1 and R2, R3 and R4, R1 and R3, and R2 and R4 are all opposite, and the magnetic field detection direction is the z direction as shown in fig. 3. The magnetic fields in other directions can be detected by matching with other direction detection circuits. The magneto-resistance sensor test circuit can also change the arrangement mode of devices, the positive and negative of a power supply and the like according to the requirements.
All the embodiments described above have the following advantages:
the sensor film layer is simple in structure and based on the unidirectional spin Hall magnetic resistance effect, so that the film layer only needs two layers, and the preparation difficulty is greatly reduced. And secondly, the direction of the external magnetic field can be detected while the magnitude of the external magnetic field is detected. The method comprises the following steps:
(1) Compared with an anisotropic magneto-resistance magnetic sensor, the invention can additionally detect the magnetic field direction, and when the magnetic field directions are opposite, the magneto-resistance is opposite, so that the direct reading of the magnetic field property is convenient.
(2) Compared with a magnetic sensor based on giant magnetoresistance and tunneling magnetoresistance, the invention has the advantages of simple film structure and easy integration of large-scale devices and industrial mass production. The traditional magnetic sensor multilayer film structure based on giant magnetoresistance and tunneling magnetoresistance effects needs to prepare tens of hundreds of layers of ultrathin films, and has higher requirements on industrial production and control of film parameters, complicated preparation process, no contribution to large-scale preparation and higher cost. In addition, the invention can be well combined with the existing semiconductor industry.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.

Claims (10)

1. A magnetoresistive sensor, comprising: a substrate, a film layer, and an electrode; the film layer and the electrode are both positioned on the substrate; the electrodes are positioned on the left side and the right side of the film layer and are in contact with the film layer;
the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer; the ferromagnetic layer and the non-ferromagnetic layer are arranged up and down, and the interfaces are in contact; the non-ferromagnetic layer has a spin hall angle greater than a set value;
the ferromagnetic layer is used for obtaining magnetization intensity and generating magnetization direction when being magnetized by an external magnetic field;
the non-ferromagnetic layer is used for generating spin polarized current;
the electrodes are used for reading the resistances at two ends of the film layer so as to obtain the magnitude and the direction of the external magnetic field.
2. A magnetoresistive sensor according to claim 1, further comprising: a buffer layer; the buffer is located between the substrate and the film layer.
3. A magnetoresistive sensor according to claim 1, further comprising: a protective layer; the upper surface of the film layer is provided with the protective layer.
4. The magnetoresistive sensor of claim 1 wherein the substrate, the non-ferromagnetic layer and the ferromagnetic layer are arranged in sequence from bottom to top.
5. A magnetoresistive sensor according to claim 1, wherein the substrate, the ferromagnetic layer and the non-ferromagnetic layer are arranged in sequence from bottom to top.
6. A magnetoresistive sensor according to claim 1, wherein the material of the non-ferromagnetic layer is a topological insulator, a topological semi-metal or a heavy metal.
7. A magnetoresistive sensor according to claim 1, wherein the ferromagnetic layer is of a two-dimensional ferromagnetic material or a ferromagnetic metal.
8. A method of manufacturing a magneto-resistive sensor according to any one of claims 1 to 7, comprising:
growing a film layer on a substrate; the film layer comprises: a ferromagnetic layer and a non-ferromagnetic layer;
etching downwards to the substrate at the left side and the right side of the film layer, and plating electrodes in the etching area to obtain the magnetic resistance sensor.
9. The method of manufacturing according to claim 8, wherein a buffer layer is grown between the substrate and the film layer; and growing a protective layer on the film layer.
10. A magnetoresistive sensor testing circuit, comprising: four magneto-resistive sensors according to any one of claims 1-7, the four magneto-resistive sensors constituting a wheatstone bridge; the current directions of the magneto-resistance sensors at the same position of the two arms of the Wheatstone bridge are opposite, and the current directions of the magneto-resistance sensors on the same arm of the Wheatstone bridge are opposite.
CN202310135918.6A 2023-02-20 2023-02-20 Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method Pending CN116165582A (en)

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CN202310135918.6A CN116165582A (en) 2023-02-20 2023-02-20 Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method

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CN202310135918.6A CN116165582A (en) 2023-02-20 2023-02-20 Magneto-resistance sensor, magneto-resistance sensor test circuit and preparation method

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CN116165582A true CN116165582A (en) 2023-05-26

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