CN116156752A - High-current-density vertical power supply and distribution module and packaging process thereof - Google Patents

Abstract

The invention discloses a high-current-density vertical power supply and distribution module and a packaging process thereof, belongs to the technical field of microelectronic packaging, and solves the problems of large size, low current density, high thermal resistance of embedded chip packaging, difficult heat dissipation and overhigh junction temperature of the power supply and distribution module in the prior art. In the module, a bottom electrode, a package substrate, a power device and a top electrode are laminated; the integrated circuit chip and the passive device are buried inside the package substrate and stacked in a vertical direction. The packaging process comprises embedding integrated circuit chip in a first core board, embedding passive device in a second core board, and laminating to form packaging substrate; drilling holes, hole wall metallization and hole plugging are carried out on the packaging substrate to obtain a whole to be packaged; and (5) encapsulating, grinding and surface metallization are carried out on the whole to be packaged. The module and the packaging process can effectively improve the current density.

Description

High-current-density vertical power supply and distribution module and packaging process thereof

Technical Field

The invention belongs to the technical field of microelectronic packaging, and particularly relates to a high-current-density vertical power supply and distribution module and a packaging process thereof.

Background

Under the traction of high calculation force density, high energy efficiency ratio and function integration requirements, the power supply and distribution modes of application systems such as high-performance computing, millimeter waves and the like are required to be changed from a traditional horizontal structure to a vertical structure, and the power consumption density of a load chip requires that the current density of a vertical power supply and distribution module is higher than 1A/mm ² 。

However, the power supply and distribution module in the traditional horizontal power supply and distribution structure has large volume size and low current density (less than or equal to 0.3A/mm) ² ) The structural requirements that the module area in the vertical power supply and distribution system does not exceed the area of the load chip and the vertical interconnection of the module port and the pins of the load chip cannot be met.

Disclosure of Invention

In view of the above analysis, the invention aims to provide a high-current-density vertical power supply and distribution module and a packaging process thereof, which solve the problems of large size, low current density, high thermal resistance of embedded chip packaging, difficult heat dissipation and overhigh junction temperature of a power supply and distribution module in a horizontal power supply and distribution structure in the prior art.

The aim of the invention is mainly realized by the following technical scheme:

the invention provides a high-current density vertical power supply and distribution module, which comprises a packaging substrate, a power device, a side electrode, a bottom electrode, a top electrode, an integrated circuit chip and a passive device, wherein the power device is arranged on the packaging substrate; the bottom electrode, the packaging substrate, the power device and the top electrode are sequentially stacked from bottom to top; the side electrode is positioned on the side surface of the packaging substrate, and the top electrode is connected with the packaging substrate through the side electrode; the integrated circuit chip and the passive device are embedded inside the package substrate, and the integrated circuit chip and the passive device are arranged in a stacked manner in a vertical direction.

Further, the high-current-density vertical power supply and distribution module further comprises a heat dissipation piece arranged on the side face of the power device.

Further, the heat dissipation piece comprises a heat dissipation substrate and a plurality of heat dissipation columns, wherein a net-shaped groove is formed in one face, facing away from the power device, of the heat dissipation substrate, the heat dissipation columns are respectively inserted into the net-shaped groove and are in sliding connection with the net-shaped groove, groove wall protrusions are arranged on the side wall of the net-shaped groove, column wall protrusions are arranged at one end, inserted into the net-shaped groove, of each heat dissipation column, and the column wall protrusions are located between the groove bottom of the net-shaped groove and the groove wall protrusions.

Further, the heat dissipation piece is in direct contact connection with the power device through the insulating heat conduction layer.

Further, the insulating heat conducting layer is made of heat conducting resin.

Further, the side electrode, the top electrode and/or the bottom electrode serve as signal ports and/or power ports.

Further, the side electrode is directly connected with the metal layer inside the package substrate.

Further, the maximum power of the integrated circuit chip is not more than 3W, and the maximum power consumption of the power device is more than 10W.

Further, the high current density vertical power supply and distribution module further comprises an inductor, wherein the inductor is located between the top electrode and the power device.

Further, the projected area of the inductor on the surface of the packaging substrate does not exceed the area of the surface of the packaging substrate, and the height of the bottom of the inductor from the surface of the packaging substrate is larger than or equal to the mounting height of the power device.

The invention also provides a packaging process of the high-current-density vertical power supply and distribution module, which is used for packaging the high-current-density vertical power supply and distribution module and comprises the following steps:

providing a first core board and a second core board, embedding the integrated circuit chip in the first core board, and embedding the passive device in the second core board;

pressing the first core plate and the second core plate to form a packaging substrate;

drilling holes on the lower surface of the packaging substrate, carrying out hole wall metallization on the hole wall, and plugging holes by adopting a solder resist material, so as to form a bottom electrode on the lower surface of the packaging substrate, thereby obtaining the whole to be packaged;

encapsulating the whole to be encapsulated to obtain an encapsulated whole;

grinding the whole package until the side wall of the package substrate is exposed;

and carrying out surface metallization on the whole ground package to form a side electrode and a top electrode, thereby obtaining the high-current-density vertical power supply and distribution module.

Compared with the prior art, the invention has at least one of the following beneficial effects:

a) The high-current-density vertical power supply and distribution module provided by the invention is of a layered stack structure, correspondingly, the bottom electrode, the packaging substrate, the power device and the top electrode are sequentially stacked and arranged in the vertical direction from bottom to top on the whole, and the passive device and the integrated circuit chip are stacked and arranged inside the packaging substrate, so that the area of the power supply and distribution module can be effectively reduced, and the current density of the existing power supply and distribution module product is generally 0.3A/mm ² The inductor generally occupies 1/4-1/2 of the total area, the total area of the power supply and distribution module can be reduced to the area of the inductor by adopting a layered stacked structure, and the corresponding current density can be increased to 2-4 times that of the existing module, namely 0.6-1.2A/mm ² Through tests, the high current density vertical power supply and distribution module adopting the embodiment can actually improve the current density to 1A/mm ² The module port and the load chip pin are vertically interconnected, so that the structural requirements that the module area in the vertical power supply and distribution system does not exceed the area of the load chip and the module port and the load chip pin are vertically interconnected can be met.

B) The invention provides a high-current density vertical power supply and distribution module, wherein a packaging substrate is a carrier of a power supply conversion circuit in the power supply and distribution module; the side electrode is used for realizing interconnection between metal layers in the packaging substrate and conducting input and output signals; the bottom electrode is an interface component for internal signals of the power supply and distribution module and an external circuit; an integrated circuit chip is a control or drive chip for a power device.

C) According to the high-current-density vertical power supply and distribution module provided by the invention, for the high-current-density vertical power supply and distribution module with different structures, the heating positions and the heating temperatures of the side walls of the high-current-density vertical power supply and distribution module are different, in practical application, before the high-current-density vertical power supply and distribution module is packaged, the heating positions and the heating temperatures of the side walls of the power device can be tested, according to the differences of the heating positions and the heating temperatures, the heat dissipation columns are intensively arranged at the positions with higher heating temperatures by sliding the heat dissipation columns, and the arrangement quantity of the heat dissipation columns can be properly reduced for the positions with lower heating temperatures.

D) According to the high-current-density vertical power supply and distribution module provided by the invention, for the part, in which the radiating column is not arranged, of the mesh-shaped groove, the groove wall protrusions can serve as radiating fins, so that the overall radiating performance of the radiating piece can be effectively improved. Similarly, the column wall protrusions provided on the heat-dissipating column can also serve as heat-dissipating fins.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.

Drawings

The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, like reference numerals being used to refer to like parts throughout the several views.

Fig. 1 is a schematic structural diagram of a high current density vertical power supply and distribution module according to an embodiment of the invention;

FIG. 2 is a block diagram of a high current density vertical power supply and distribution module according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a first core board and a second core board obtained in step 1 in a packaging process of a high current density vertical power supply and distribution module according to a second embodiment of the present invention;

fig. 4 is a schematic diagram of a package substrate obtained in step 2 in a package process of a high current density vertical power supply and distribution module according to a second embodiment of the present invention;

fig. 5 is a schematic diagram of a bottom electrode and a package substrate obtained in step 3 in a packaging process of a high current density vertical power supply and distribution module according to a second embodiment of the present invention;

fig. 6 is a schematic structural diagram of a power device and an inductor obtained in step 4 in the packaging process of the high current density vertical power supply and distribution module according to the second embodiment of the present invention.

Reference numerals:

1-packaging a substrate; 2-a power device; 3-side electrodes; 4-a heat sink; 5-a bottom electrode; 6-an integrated circuit chip; 7-passive devices; 8-attaching electrodes; 9-top electrode; a 10-inductor; 11-a lead frame; 12-a first core plate; 13-a second core plate.

Detailed Description

Preferred embodiments of the present invention are described in detail below with reference to the attached drawing figures, which form a part of the present invention and are used in conjunction with the embodiments of the present invention to illustrate the principles of the present invention.

Example 1

The present embodiment provides a high current density vertical power supply and distribution module, referring to fig. 1 to 2, including a package substrate 1, a power device 2 (for example, devices of the type Si MOSFET, gaN HEMTs, siC MOSFET, siC JFET, IGBT, etc.), a side electrode 3, a bottom electrode 5, a top electrode 9, an integrated circuit chip 6, and a passive device 7 (for example, resistor and/or capacitor), wherein the bottom electrode 5, the package substrate 1, the power device 2, and the top electrode 9 are stacked in this order from bottom to top, the side electrode 3 is located at the side of the package substrate 1, the top electrode 9 is connected to the package substrate 1 through the side electrode 3, the integrated circuit chip 6 and the passive device 7 are embedded inside the package substrate 1, and the two are stacked in a vertical direction.

Compared with the prior art, the high current density vertical power supply and distribution module provided in this embodiment is a layered stacked structure, and accordingly, the bottom electrode 5, the package substrate 1, the power device 2 and the top electrode 9 are stacked in sequence from bottom to top in the vertical directionThe passive devices 7 and the integrated circuit chips 6 are stacked and arranged inside the packaging substrate 1, so that the area of the power supply and distribution module can be effectively reduced, and the current density of the existing power supply and distribution module product is usually 0.3A/mm ² In the following, the inductor 10 generally occupies 1/4-1/2 of the total area, the total area of the power supply and distribution modules can be reduced to the area of the inductor 10 by adopting a layered stacked structure, and the corresponding current density can be increased to 2-4 times that of the existing module, namely 0.6-1.2A/mm ² Through tests, the high current density vertical power supply and distribution module adopting the embodiment can actually improve the current density to 1A/mm ² The module port and the load chip pin are vertically interconnected, so that the structural requirements that the module area in the vertical power supply and distribution system does not exceed the area of the load chip and the module port and the load chip pin are vertically interconnected can be met.

It should be noted that the high current density vertical power supply and distribution module of the embodiment can be used in an electronic system in which the power supply module cannot be laterally placed, wherein the chip layout of the high performance computing system, the T/R component system, the optical sensing system and the like has a cluster characteristic.

Specifically, the functions of the above components are as follows:

the packaging substrate 1 is a carrier of a power conversion circuit in the power supply and distribution module; the side electrode 3 is used for realizing interconnection between metal layers in the package substrate 1 and conducting input and output signals; the bottom electrode 5 is an interface component for internal signals of the power supply and distribution module and an external circuit; the integrated circuit chip 6 is a control or drive chip for the power device 2.

In the prior art, the size of the traditional power supply and distribution module can be reduced by adopting the embedded substrate technology, however, the thermal resistance of the embedded chip package is generally higher than 4K/W, when the output current is higher than 20A, the embedded chip can easily work normally because of difficult heat dissipation and overhigh junction temperature, and in order to improve the heat dissipation performance of the high-current-density vertical power supply and distribution module, the high-current-density vertical power supply and distribution module further comprises a heat dissipation part 4 arranged on the side surface of the power device 2, the heat dissipation part 4 is an external heat dissipation interface of the power device 2, and the heat dissipated by the power device 2 can be conducted to the outside of the high-current-density vertical power supply and distribution module through the arrangement of the heat dissipation part 4, so that the heat dissipation of the power device 2 is realized.

To the structure of radiator 4, specifically, including radiating base plate and a plurality of heat dissipation post, the one side of radiating base plate back to power device 2 is equipped with the netted groove, and a plurality of heat dissipation posts insert respectively in the netted groove and with netted groove sliding connection, the lateral wall in netted groove is equipped with the cell wall arch, and the one end that the heat dissipation post inserted the netted groove is equipped with the column wall arch, and the column wall arch is located between the tank bottom in netted groove and the cell wall arch. For the high-current density vertical power supply and distribution module with different structures, the heating positions and the heating temperatures of the side walls of the high-current density vertical power supply and distribution module are different, in practical application, before the high-current density vertical power supply and distribution module is packaged, special tests can be carried out on the heating positions and the heating temperatures of the side walls of the power device 2, according to the differences of the heating positions and the heating temperatures, the heat dissipation columns are intensively arranged at the positions with higher heating temperatures through the sliding heat dissipation columns, and the arrangement quantity of the heat dissipation columns can be properly reduced for the positions with lower heating temperatures.

In addition, the portion of the mesh-shaped groove where the heat radiation column is not provided is provided with the groove wall protrusion, which corresponds to the increase of the heat radiation area of the heat radiation member 4, and the heat radiation member can be used as a heat radiation fin, so that the heat radiation performance of the whole heat radiation member 4 can be improved more effectively. Similarly, the column wall protrusion provided on the heat radiation column can increase the heat radiation area of the heat radiation member 4, and can be used as a heat radiation fin as well.

Specifically, the heat dissipation element 4 may be directly connected to the power device 2 through the insulating and heat conducting layer, which has dual functions of insulation and heat conductivity, so that the insulating and heat conducting layer can realize the insulating connection between the heat dissipation element 4 and the power device 2, and can transfer the heat emitted by the power device 2 to the heat dissipation element 4, thereby improving the heat dissipation performance of the power device 2.

Illustratively, the material of the insulating and heat conducting layer may be a heat conducting resin material.

In order to further reduce the area of the power supply and distribution module, in the high-current density vertical power supply and distribution module, the side electrode 3, the top electrode 9 and/or the bottom electrode 5 are all input ports of the vertical power supply and distribution module, namely can be used as signal ports and also can be used as power ports, the side electrode 3 realizes connection of the top electrode 9 and the package substrate 1, the top electrode 9 can realize longitudinal stacking of a plurality of vertical power supply and distribution modules, and it is noted that the side electrode 3 is used as an input port to replace an electric connector to realize vertical power distribution, and the top electrode 9 can be directly welded without using an additional electric connector.

The side electrode 3 is directly connected with the metal layer inside the package substrate 1, and no additional transition component is arranged between the side electrode 3 and the metal layer inside the package substrate 1, so that input signals can be conducted into the package substrate 1 on one hand, and interconnection between the metal layers inside the package substrate 1 can be realized on the other hand, so that an integrated metal structure is formed, and the area of the package substrate 1 is reduced.

The package substrate 1 is a multi-layer PCB board, and includes a plurality of metal layers and a plurality of insulating layers.

In order to further reduce the size of the high-current-density vertical power supply and distribution module, the maximum power of the integrated circuit chip 6 is not more than 3W, and the maximum power consumption of the power device 2 is 10W or more.

It should be noted that, when the inductor 10 (for example, the inductor 10 and/or the transformer) for storing energy and filtering is present inside the package substrate 1, the inductor 10 is located between the top electrode 9 and the power device 2, the inductor 10 is mounted on the package substrate 1 through the lead frame 11, the projected area of the inductor 10 on the surface (upper surface, lower surface and/or side surface) of the package substrate 1 does not exceed the area of the surface of the package substrate 1, and the height from the bottom of the inductor 10 to the surface of the package substrate 1 needs to be greater than or equal to the mounting height of the power device 2.

Example two

The embodiment provides a packaging process of a high-current-density vertical power supply and distribution module, which is used for packaging the high-current-density vertical power supply and distribution module provided by the embodiment, and comprises the following steps:

step 1: providing a first core board 12 and a second core board 13, embedding the integrated circuit chip 6 in the first core board 12, embedding the passive devices 7 in the core boards, see fig. 3;

step 2: the first core board 12 and the second core board 13 are pressed together to form the packaging substrate 1, referring to fig. 4, in the preparation process of the packaging substrate 1, compared with the process that the integrated circuit chip 6 and the passive device 7 are directly embedded in the same core board, the integrated circuit chip 6 and the passive device 7 are respectively embedded in different core boards (namely the first core board 12 and the second core board 13), so that the area of the packaging substrate 1 can be effectively reduced;

step 3: respectively performing mechanical drilling on the upper surface and the lower surface of the package substrate 1, performing hole wall metallization (e.g. electroplating) on the hole wall, performing hole plugging by adopting a solder resist material, forming a mounting electrode 8 (the mounting electrode is copper foil on the upper surface of the package electrode) on the upper surface of the package substrate 1, and forming a bottom electrode 5 (the bottom electrode 5 is copper foil on the lower surface of the package substrate 1) on the lower surface of the package substrate 1, as shown in fig. 5;

step 4: the power device 2 and the inductor 10 are sequentially mounted on the mounting electrode 8, see fig. 6;

step 5: after the heat dissipation element 4 is attached to the side surface of the power device 2, the whole to be packaged is obtained;

step 6: resin encapsulation is carried out on the whole to be encapsulated by adopting an encapsulating material (such as resin), so that the encapsulation substrate 1, the power device 2, the heat dissipation piece 4 and the inductor 10 are ensured to be completely encapsulated by the encapsulating material, and the whole encapsulation is obtained;

step 7: four-side mechanical grinding is carried out on the whole solidified package until the side walls of the heat dissipation piece 4 and the package substrate 1 are exposed;

step 8: and carrying out surface metallization on the whole ground package to form a side electrode 3 and a top electrode 9, thereby obtaining the high-current-density vertical power supply and distribution module.

Compared with the prior art, the beneficial effects of the packaging process of the high-current-density vertical power supply and distribution module provided by the embodiment are basically the same as those of the high-current-density vertical power supply and distribution module provided by the embodiment one, and are not described in detail herein.

Specifically, in the above step 6, the surface metallization includes the following steps:

step 61: the whole ground package is sequentially subjected to electroless copper plating, electroplating and surface treatment (e.g., OSP, tin spraying, ENIG, ENEPIG, etc.).

The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.

Claims (10)

1. The high-current-density vertical power supply and distribution module is characterized by comprising a packaging substrate, a power device, a side electrode, a bottom electrode, a top electrode, an integrated circuit chip and a passive device;

the bottom electrode, the packaging substrate, the power device and the top electrode are sequentially stacked from bottom to top;

the side electrode is positioned on the side surface of the packaging substrate, and the top electrode is connected with the packaging substrate through the side electrode;

the integrated circuit chip and the passive device are embedded inside the package substrate, and are arranged in a stacked manner in the vertical direction.

2. The high current density vertical power module of claim 1 further comprising a heat sink disposed on a side of the power device.

3. The high current density vertical power supply and distribution module of claim 2 wherein the heat sink is in direct contact with the power device through an insulating thermally conductive layer.

4. The high current density vertical power supply and distribution module according to claim 3, wherein the material of the insulating and heat conducting layer is a heat conducting resin.

5. The high current density vertical power supply and distribution module of claim 1, wherein the side electrodes, top electrodes and/or bottom electrodes act as signal ports and/or power ports.

6. The high current density vertical power supply and distribution module of claim 1 wherein the side electrodes are directly connected to metal layers inside the package substrate.

7. The high current density vertical power supply and distribution module of claim 1 wherein the maximum power of the integrated circuit chip is no more than 3W and the maximum power consumption of the power device is 10W or more.

8. The high current density vertical power supply and distribution module of any one of claims 1 to 7 further comprising an inductor located between the top electrode and the power device.

9. The high current density vertical power supply and distribution module according to claim 8, wherein the projected area of the inductor on the surface of the package substrate is not more than the area of the surface of the package substrate, and the height of the bottom of the inductor from the surface of the package substrate is greater than or equal to the mounting height of the power device.

10. A packaging process for a high current density vertical power supply and distribution module according to any one of claims 1 to 9, comprising the steps of:

providing a first core board and a second core board, embedding the integrated circuit chip in the first core board, and embedding the passive device in the second core board;

pressing the first core plate and the second core plate to form a packaging substrate;

drilling holes on the lower surface of the packaging substrate, carrying out hole wall metallization on the hole wall, and plugging holes by adopting a solder resist material, so as to form a bottom electrode on the lower surface of the packaging substrate, thereby obtaining the whole to be packaged;

encapsulating the whole to be encapsulated to obtain an encapsulated whole;

grinding the whole package until the side wall of the package substrate is exposed;

and carrying out surface metallization on the whole ground package to form a side electrode and a top electrode, thereby obtaining the high-current-density vertical power supply and distribution module.

Images