CN116154484A - Binary channels terahertz is absorption device entirely now - Google Patents
Binary channels terahertz is absorption device entirely now Download PDFInfo
- Publication number
- CN116154484A CN116154484A CN202310351387.4A CN202310351387A CN116154484A CN 116154484 A CN116154484 A CN 116154484A CN 202310351387 A CN202310351387 A CN 202310351387A CN 116154484 A CN116154484 A CN 116154484A
- Authority
- CN
- China
- Prior art keywords
- graphene
- absorption device
- substrate
- micrometers
- terahertz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention belongs to the field of metamaterial structures, and particularly relates to a double-channel terahertz complete absorption device, which comprises a reflecting substrate, wherein a silicon substrate is arranged on one side of the reflecting substrate in a full-coverage manner, a graphene layer is arranged at a local position on one side of the silicon substrate, which is away from the reflecting substrate, and a silicon covering layer is arranged on one side of the graphene layer, which is away from the silicon substrate, in a full-coverage manner; the invention further comprises an electrode assembly, wherein the electrode assembly is electrically connected with the graphene layer and the reflecting substrate, and the dynamic adjustable double-channel terahertz complete absorption device is obtained, can generate a surface plasma induced transparent effect, further generates an absorption effect, can achieve an absorption effect close to a hundred percent, and realizes double-channel complete absorption under a terahertz wave band. In addition, the dynamic adjustable double-channel complete absorption of the absorption device under the terahertz wave band can be realized only by external bias without changing structural parameters.
Description
Technical Field
The invention belongs to the field of metamaterial structures, and particularly relates to a double-channel terahertz complete absorption device.
Background
In the implementation of the photoelectric device, the absorption performance of the photoelectric material is important because the photoelectric material is basically relied on to absorb and convert the incident electromagnetic wave energy into electric energy or an electric signal to realize the function of the device. When the conversion efficiency of the device is certain and the state of the conversion efficiency cannot be improved, the more electromagnetic wave energy is absorbed, the greater the strength of generated electric energy or electric signals is, and the efficiency of the whole device is greatly improved.
The single graphene layer only has 2.3% of absorptivity, and the functional requirement of the device is far less than that of the device. Surface plasmon resonance is a popular direction that can greatly enhance the absorption properties of graphene. The existing absorption device based on the graphene surface plasmon needs to be optimally designed according to the wavelength of the used incident electromagnetic wave, so that structural parameters need to be changed, and the absorption effect is poor.
Disclosure of Invention
The invention aims to solve the technical problem of providing a double-channel terahertz complete absorption device capable of absorbing electromagnetic waves in different wave bands without changing structural parameters.
The invention provides a double-channel terahertz complete absorption device, which comprises a reflecting substrate, wherein a silicon substrate is arranged on one side of the reflecting substrate in a full-coverage manner, a graphene layer is arranged at a local position on one side of the silicon substrate, which is far away from the reflecting substrate, and a silicon covering layer is arranged on one side of the graphene layer, which is far away from the silicon substrate, in a full-coverage manner;
the invention also includes an electrode assembly electrically connecting the graphene layer and the reflective substrate.
Further, the graphene layer is formed by combining a plurality of graphene units, and the graphene units are arranged periodically.
Further, the graphene unit comprises a long side, a connecting portion and a short side, and the long side, the connecting portion and the short side are connected in an I-shaped structure.
Furthermore, a plurality of graphene units are arranged in parallel to form a group of graphene groups, long sides of the graphene units in the graphene groups are connected into a straight line, and a plurality of groups of graphene groups are arranged on the surface of the silicon substrate in parallel.
Still further, the interval between every two graphene groups is 0.9 micron, the width of the long side is 1.4 micron, the width of the connecting portion is 1.0 micron, the width of the short side is 0.7 micron, the length of the short side is 1.2 micron, and the interval of the connecting portions of a plurality of graphene units in the graphene groups is 3.5 microns.
Still further, the thickness of the reflective substrate was 0.2 microns, the thickness of the silicon substrate was 0.8 microns, and the thickness of the silicon cap layer was 0.2 microns.
Furthermore, the reflecting substrate is made of heavy metal.
Further, the electrodes of the electrode assembly are disposed on sides of the graphene layer and the reflective substrate.
The dynamic adjustable double-channel terahertz complete absorption device has the advantages that through the structure, the dynamic adjustable double-channel terahertz complete absorption device can be obtained, the surface plasma induced transparency effect can be generated, the absorption effect can be further generated, the absorption effect close to hundred percent can be achieved, and the double-channel complete absorption under the terahertz wave band is realized. In addition, by arranging the electrode assembly, the dynamic adjustable double-channel complete absorption of the absorption device under the terahertz wave band can be realized only by external bias without changing structural parameters, the advantages of ultrahigh absorption, small size, thin thickness, easiness in integration and manufacture and the like can be realized, the complete absorption of electromagnetic interference can be realized, and the absorption performance of the absorption device is effectively improved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a right side schematic view of FIG. 1;
FIG. 3 is a top view of FIG. 1;
FIG. 4 is a top view of a graphene unit of the present invention;
FIG. 5 is a graph showing the absorption effect of the surface plasmon-induced transparency effect in different modes of the present invention;
FIG. 6 is a graph of the dynamic tunable dual channel full absorption effect of the present invention at a Fermi level of 0.80eV for the graphene layer;
FIG. 7 is a graph showing the dynamic tunable dual-channel full absorption effect of the present invention at a Fermi level of 0.85eV for the graphene layer;
FIG. 8 is a graph of the dynamically tunable dual channel full absorption effect of the present invention at a Fermi level of 0.90eV for the graphene layer;
FIG. 9 is a graph of the dynamically tunable dual channel full absorption effect of the present invention at a Fermi level of 0.95eV for the graphene layer.
In the figure, a 1-reflective substrate; a 2-silicon substrate; a 3-graphene layer; 31-long sides; 32-a connection; 33-short sides; a 4-silicon capping layer; a 5-electrode assembly; 51-electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; the device can be mechanically connected, electrically connected, physically connected or wirelessly connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In addition, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present invention.
As shown in fig. 1-9, the invention provides a dual-channel terahertz complete absorption device, which comprises a reflecting substrate 1, wherein a silicon substrate 2 is arranged on one side of the reflecting substrate 1 in a full-coverage manner, a graphene layer 3 is arranged at a local position on one side of the silicon substrate 2, which is away from the reflecting substrate 1, and a silicon covering layer 4 is arranged on one side of the graphene layer 3, which is away from the silicon substrate 2, in a full-coverage manner;
an electrode assembly 5 is further included, the electrode assembly 5 electrically connecting the graphene layer 3 and the reflective substrate 1.
The silicon substrate 2 is used for supporting the graphene layer 3 and the reflecting substrate 1, incident electromagnetic waves can pass through the silicon substrate 2, the graphene layer 3 is a main material for realizing absorption performance of an absorption device, the interaction of the graphene layer 3 and the incident electromagnetic waves is utilized to obtain plasmon excitation, so that a double-channel complete absorption effect is obtained, and the silicon cover layer 4 is used for providing a medium for interaction of the graphene layer 3 and the incident electromagnetic waves; the electrode assembly 5 is used to adjust the fermi level of the graphene layer 3.
Through the structure, the dynamic adjustable double-channel terahertz complete absorption device can be obtained, the surface plasma induced transparency effect can be generated, the absorption effect can be further generated, the absorption effect close to hundred percent can be achieved, and the double-channel complete absorption under the terahertz wave band is realized. In addition, by arranging the electrode assembly, the invention can realize the dynamic adjustable double-channel complete absorption of the absorption device under the terahertz wave band only by external bias without changing structural parameters, can realize the advantages of ultrahigh absorption, small size, thin thickness, easy integration and manufacture and the like, can realize the complete absorption of electromagnetic interference, and effectively improves the absorption performance of the absorption device.
In one embodiment, the graphene layer 3 is formed by combining a plurality of graphene units, and the plurality of graphene units are arranged periodically. The graphene unit comprises a long side 31, a connecting portion 32 and a short side 33, and the long side 31, the connecting portion 32 and the short side 33 are connected in an I-shaped structure. The graphene units are arranged in parallel to form a group of graphene groups, long sides 31 of the graphene units in the graphene groups are connected into a straight line, and a plurality of groups of graphene groups are arranged on the surface of the silicon substrate 2 in parallel.
In this embodiment, the present invention realizes excitation of surface plasmons through the straight line connected by the plurality of long sides 31 in the graphene group. Electrons at straight line positions connected by the long sides 31 in the graphene group can be completely excited by incident electromagnetic waves, so that an effect of a bright mode is generated. Electrons of the connecting portion 32 and the short side 33 in the graphene group cannot be directly excited by incident electromagnetic waves, and the effect of a dark mode is achieved; thereby creating a bright mode and a dark mode of the invention as shown in fig. 5. The dark mode can be effectively excited by the light mode to generate destructive interference effect, so as to obtain a surface plasma induced transparent effect.
Further, by externally applying a bias voltage to the electrode 51 of the electrode assembly 5, the carrier concentration of the graphene layer 3 can be effectively externally adjusted, thereby changing the fermi level of the graphene layer 3 in the absorber device. The external bias realizes the dynamic tuning of the surface plasma induced transparency effect without changing the structural parameters of the absorption device or the mobility of the graphene layer 3Graphene layer 3 mobility is fixed to
。
The invention achieves complete absorption of a dual channel by surface plasmon resonance, as shown in fig. 6-9. The absorption device can completely absorb the incident electromagnetic wave under plasmon resonance, namely, at the frequency of the occurrence of the surface plasmon induced transparency effect, and the incident energy is completely localized near the graphene layer 3, so that an energy source is provided for the subsequent conversion of the electric signal. The absorption device achieves full absorption at two frequencies in the 8-11THz band. Along with the change of external bias voltage, the fermi energy level of the graphene layer can be continuously changed, so that the complete absorption effect of the absorption device under different frequencies can be well adjusted. The dual channel frequency absorbed by the absorber device also blue shifts with a change in fermi level from 0.80eV to 0.95eV for graphene layer 3.
In one embodiment, as shown in fig. 3-4, the graphene layer 3 has a periodic structure with a period of 4 micrometers, and the length of the long side 31 from the left end in the graphene unitl 1 Length of short side 33 from right at 0.5 μml 5 0.4 micrometers, i.e. the spacing between every two graphene groups is 0.9 micrometers, the width of the long side 31l 2 1.4 microns, the width of the connection portion 32l 3 1.0 micrometer, width of the short side 33l 4 Length of the short side 33 is 0.7 micrometersg 2 At a distance of 1.2 microns, the connection 32 in the graphene unit is at a distance from the upper and lower endsg 1 Each 1.75 microns, i.e., the spacing of the connections 32 of the plurality of graphene units in the graphene set is 3.5 microns.
In one embodiment, the thickness of the reflective substrate 1 is 0.2 microns, the thickness of the silicon substrate 2 is 0.8 microns, and the thickness of the silicon cap layer 4 is 0.2 microns.
The above size limitations allow the present absorber device to produce the absorption effect shown in fig. 6-9 at the 8-11THz band.
In one embodiment, the reflective substrate 1 is made of heavy metal, preferably gold, so as to provide a good reflective effect.
In one embodiment, the electrode 51 of the electrode assembly 5 is disposed on the side of the graphene layer 3 and the reflective substrate 1, so as to avoid the influence of the electrode assembly 5 on the absorption effect of the front surface of the absorption device.
What is not described in detail in this specification is prior art known to those skilled in the art.
Claims (8)
1. The double-channel terahertz complete absorption device is characterized by comprising a reflecting substrate (1), wherein a silicon substrate (2) is arranged on one side of the reflecting substrate (1) in a full-coverage mode, a graphene layer (3) is arranged at a local position on one side of the silicon substrate (2) away from the reflecting substrate (1), and a silicon covering layer (4) is arranged on one side of the graphene layer (3) away from the silicon substrate (2) in a full-coverage mode;
the graphene electrode structure further comprises an electrode assembly (5), wherein the electrode assembly (5) is electrically connected with the graphene layer (3) and the reflecting substrate (1).
2. The dual-channel terahertz complete absorption device according to claim 1, wherein the graphene layer (3) is formed by combining a plurality of graphene units, and the plurality of graphene units are arranged periodically.
3. The dual-channel terahertz complete absorption device according to claim 2, wherein the graphene unit includes a long side (31), a connecting portion (32), and a short side (33), and the long side (31), the connecting portion (32), and the short side (33) are connected in an "i" shape structure.
4. The dual-channel terahertz complete absorption device as set forth in claim 3, wherein a plurality of graphene units are arranged in parallel to form a group of graphene groups, long sides (31) of the plurality of graphene units in the graphene groups are connected into a straight line, and a plurality of groups of graphene groups are arranged on the surface of the silicon substrate (2) in parallel.
5. The dual-channel terahertz full absorbing device of claim 4, wherein a spacing between each two groups of graphene is 0.9 micrometers, a width of the long side (31) is 1.4 micrometers, a width of the connecting portion (32) is 1.0 micrometers, a width of the short side (33) is 0.7 micrometers, a length of the short side (33) is 1.2 micrometers, and a spacing of the connecting portions (32) of a plurality of graphene units in the graphene groups is 3.5 micrometers.
6. The dual-channel terahertz complete absorption device as claimed in any one of claims 1 to 5, wherein the thickness of the reflective substrate (1) is 0.2 micrometers, the thickness of the silicon substrate (2) is 0.8 micrometers, and the thickness of the silicon cover layer (4) is 0.2 micrometers.
7. The dual-channel terahertz complete absorption device as claimed in any one of claims 1 to 5, wherein the reflective substrate (1) is made of heavy metal.
8. The dual-channel terahertz complete absorption device as claimed in any one of claims 1 to 5, characterized in that the electrodes (51) of the electrode assembly (5) are disposed at the sides of the graphene layer (3) and the reflective substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310351387.4A CN116154484B (en) | 2023-04-04 | 2023-04-04 | Binary channels terahertz is absorption device entirely now |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310351387.4A CN116154484B (en) | 2023-04-04 | 2023-04-04 | Binary channels terahertz is absorption device entirely now |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116154484A true CN116154484A (en) | 2023-05-23 |
| CN116154484B CN116154484B (en) | 2023-07-04 |
Family
ID=86373875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310351387.4A Active CN116154484B (en) | 2023-04-04 | 2023-04-04 | Binary channels terahertz is absorption device entirely now |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116154484B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610617B1 (en) * | 2012-06-14 | 2013-12-17 | International Business Machines Corporation | Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies |
| US20170104071A1 (en) * | 2015-10-07 | 2017-04-13 | Samsung Electronics Co., Ltd. | Graphene device and method of operating the same |
| CN107146955A (en) * | 2016-03-01 | 2017-09-08 | 中国计量学院 | A kind of efficient adjustable Terahertz wave absorbing device part based on grapheme material |
| CN207281413U (en) * | 2017-09-18 | 2018-04-27 | 北京工业大学 | A kind of terahertz light gate device based on graphene Meta Materials |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| US20180306712A1 (en) * | 2016-01-07 | 2018-10-25 | University Of Shanghai For Science And Technology | Method of enhancing absorption spectral signals of biological samples in terahertz wavebands |
| US20180315880A1 (en) * | 2015-06-15 | 2018-11-01 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabrication |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
| CN112332107A (en) * | 2020-09-25 | 2021-02-05 | 华南师范大学 | Super-surface terahertz broadband absorber with metal-medium-graphene structure |
| CN113328259A (en) * | 2021-07-05 | 2021-08-31 | 江苏大学 | Metamaterial absorber, device and system and preparation method thereof |
| CN114038927A (en) * | 2021-12-01 | 2022-02-11 | 电子科技大学 | Ferroelectric integrated graphene plasma terahertz detector with high response |
| CN114498070A (en) * | 2022-03-16 | 2022-05-13 | 河南工业大学 | Terahertz double-band adjustable absorber based on graphene-medium-metal structure |
| CN115437040A (en) * | 2022-08-30 | 2022-12-06 | 湖南工商大学 | Dielectric super-surface structure with local field enhancement effect and application thereof |
-
2023
- 2023-04-04 CN CN202310351387.4A patent/CN116154484B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610617B1 (en) * | 2012-06-14 | 2013-12-17 | International Business Machines Corporation | Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies |
| US20180315880A1 (en) * | 2015-06-15 | 2018-11-01 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabrication |
| US20170104071A1 (en) * | 2015-10-07 | 2017-04-13 | Samsung Electronics Co., Ltd. | Graphene device and method of operating the same |
| US20180306712A1 (en) * | 2016-01-07 | 2018-10-25 | University Of Shanghai For Science And Technology | Method of enhancing absorption spectral signals of biological samples in terahertz wavebands |
| CN107146955A (en) * | 2016-03-01 | 2017-09-08 | 中国计量学院 | A kind of efficient adjustable Terahertz wave absorbing device part based on grapheme material |
| CN207281413U (en) * | 2017-09-18 | 2018-04-27 | 北京工业大学 | A kind of terahertz light gate device based on graphene Meta Materials |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
| CN112332107A (en) * | 2020-09-25 | 2021-02-05 | 华南师范大学 | Super-surface terahertz broadband absorber with metal-medium-graphene structure |
| CN113328259A (en) * | 2021-07-05 | 2021-08-31 | 江苏大学 | Metamaterial absorber, device and system and preparation method thereof |
| CN114038927A (en) * | 2021-12-01 | 2022-02-11 | 电子科技大学 | Ferroelectric integrated graphene plasma terahertz detector with high response |
| CN114498070A (en) * | 2022-03-16 | 2022-05-13 | 河南工业大学 | Terahertz double-band adjustable absorber based on graphene-medium-metal structure |
| CN115437040A (en) * | 2022-08-30 | 2022-12-06 | 湖南工商大学 | Dielectric super-surface structure with local field enhancement effect and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 宋建勋;徐永钊;凌东雄;魏东山;: "基于石墨烯的可调谐高吸收率太赫兹超材料", 太赫兹科学与电子信息学报, no. 06 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116154484B (en) | 2023-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Multi-band, tunable, high figure of merit, high sensitivity single-layer patterned graphene—Perfect absorber based on surface plasmon resonance | |
| Cao et al. | A broadband plasmonic light absorber based on a tungsten meander-ring-resonator in visible region | |
| CN109411898B (en) | Terahertz dual-band adjustable wave absorber based on graphene | |
| CN109037958B (en) | Single/dual-band tunable terahertz wave metamaterial absorber | |
| CN111883935B (en) | Terahertz wave absorber based on graphene metamaterial | |
| Qi et al. | Withdrawn: Tunable plasmonic absorber in THz-band range based on graphene “arrow” shaped metamaterial | |
| Li et al. | Polarization-sensitive multi-frequency switches and high-performance slow light based on quadruple plasmon-induced transparency in a patterned graphene-based terahertz metamaterial | |
| CN107146955A (en) | A kind of efficient adjustable Terahertz wave absorbing device part based on grapheme material | |
| CN111413299A (en) | Metal-graphene mixed structure super surface, sensor and optical switch | |
| CN112332107A (en) | Super-surface terahertz broadband absorber with metal-medium-graphene structure | |
| CN116154484B (en) | Binary channels terahertz is absorption device entirely now | |
| CN211123332U (en) | Graphene-based broadband adjustable terahertz wave absorber | |
| CN113300118B (en) | Double-function device for realizing electromagnetic induction transparency and perfect absorption | |
| CN105140314A (en) | Micro-nanofiber structure based wide-spectrum graphene photoconductive detector | |
| CN112684648B (en) | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity | |
| CN111817019A (en) | Ultra-wideband high-efficiency wide-angle terahertz wave absorber with gradient structure medium loaded with graphene | |
| CN111308588B (en) | Multi-band perfect absorber based on surface plasmons | |
| Gupta et al. | Tunability in graphene based metamaterial absorber structures in mid-infrared region | |
| CN108718006A (en) | A kind of three wave band topology Meta Materials Terahertz wave absorbing devices | |
| CN115621744A (en) | Based on graphite alkene-VO 2 Terahertz ultra-wideband adjustable wave absorber | |
| CN216850342U (en) | Molybdenum disulfide-based broadband adjustable terahertz wave absorber | |
| Raeen et al. | Design and analysis of a miniaturized UWB plasmonic absorber in visible light spectrum | |
| CN217427101U (en) | Terahertz broadband absorption and polarization conversion dual-function metamaterial | |
| Zhao et al. | Tunable Dual-band and Polarization-insensitive Electromagnetic Induced Transparency-Like Window Based on Graphene Metamaterials | |
| JP2009508694A (en) | Apparatus and method for manipulating light using nanoscale co-metallic structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |