CN113328259A - Metamaterial absorber, device and system and preparation method thereof - Google Patents
Metamaterial absorber, device and system and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Abstract
The invention discloses a metamaterial absorber, a device, a system and a preparation method thereof, and relates to the technical field of terahertz electromagnetic wave metamaterials; the metamaterial absorber comprises a metal micro-resonator structure layer, a graphene structure layer, a light-transmitting medium layer and a reflecting metal layer. Under the action of external laser and/or external voltage, the graphene structure layer and the metal micro-resonator structure layer form plasma resonance with terahertz electromagnetic waves, and the plasma resonance and Fabry-Perot interference resonance formed by the light-transmitting medium layer are coupled with each other to absorb the terahertz electromagnetic waves. The conductivity of the graphene structure layer is changed by adjusting the parameters of external laser and/or external voltage to adjust the intensity of the plasma resonance, so that the mutual coupling intensity of the Fabry-Perot interference resonance and the plasma resonance is changed, the absorption intensity of the terahertz electromagnetic wave is controlled, and the absorption rate and the absorption frequency of the terahertz electromagnetic wave are effectively and flexibly adjusted.
Description
Technical Field
The invention relates to the technical field of terahertz electromagnetic wave metamaterials, in particular to a metamaterial absorber, a device and a system and a preparation method thereof.
Background
The terahertz (THz) band is also known as the THz gap. Terahertz technology has become one of the 21 st century 10 great core technologies. Terahertz waves are one type of electromagnetic waves, with wavelengths in the range of approximately 30 μm to 3000 μm, between microwave and infrared.
Terahertz is very low in photon energy and high in penetrability, can resonate with biological macromolecules, and has the characteristic of biological fingerprint. Due to the unique electromagnetic wave characteristics, the terahertz technology is widely applied to the aspects of biological medicine, communication, public safety and the like. Therefore, the absorption and regulation of terahertz electromagnetic waves become the focus of current scientific research. The existing terahertz wave absorber is difficult to effectively and flexibly dynamically regulate and control the absorption of terahertz waves.
Disclosure of Invention
The invention aims to provide a metamaterial absorber, a metamaterial device, a metamaterial system and a metamaterial preparation method, and the metamaterial absorber, the metamaterial device and the metamaterial system can effectively and flexibly regulate and control the absorptivity and the absorption frequency of terahertz electromagnetic waves through a modulation mode combining externally applied laser and voltage.
In order to achieve the purpose, the invention provides the following scheme:
a metamaterial absorber, comprising:
a light-transmitting medium layer;
the reflecting metal layer is arranged on the lower surface of the light-transmitting medium layer;
the graphene structure layer is arranged on the upper surface of the light-transmitting medium layer;
the metal micro-resonator structure layer is arranged on the graphene structure layer; the metal micro-resonator structure layer is a metal layer with a bus topological structure;
under the action of external laser and/or external voltage, the graphene structure layer and the metal micro-resonator structure layer form plasma resonance with terahertz electromagnetic waves;
when terahertz electromagnetic waves are transmitted to the light-transmitting medium layer, the light-transmitting medium layer forms Fabry-Perot interference resonance, and the plasma resonance is mutually coupled with the Fabry-Perot interference resonance formed by the light-transmitting medium layer;
in the working state, the intensity of the plasma resonance is adjusted by adjusting working parameters of external laser and/or external voltage so as to change the mutual coupling intensity of the Fabry-Perot interference resonance and the plasma resonance and further control the electromagnetic response of the terahertz electromagnetic wave.
Optionally, the metal microresonator structural layer includes at least one elemental metal unit; the basic metal unit comprises a bus metal strip, a plurality of branch metal strips and metal blocks with the same number as the branch metal strips;
one end of each branch metal strip is connected with the bus metal strip, and the other end of each branch metal strip is connected with one metal block.
Optionally, when the metal microresonator structural layer includes a plurality of basic metal units, the basic metal units are connected to each other through the bus metal bars and are arranged in an array.
Optionally, the graphene structure layer is provided with basic graphene units; the number of the basic graphene units is the same as that of the basic metal units, and the basic graphene units are arranged according to the arrangement form of the basic metal units;
the basic graphene unit is divided into a graphene area and a blank area; the graphene area is an area covered with graphene, and the blank area is not covered with graphene;
the graphene area of the basic graphene unit is a projection area of the bus metal strips, the branch metal strips and the metal blocks arranged in an even order in the basic metal unit, and the blank area of the basic graphene unit is a projection area of the metal blocks arranged in an odd order in the basic metal unit.
Optionally, the metal microresonator further comprises an ion glue layer disposed on the metal microresonator structure layer;
a first electrode is arranged on the ion glue layer, and a second electrode is arranged on the metal micro-resonator structure layer;
the first electrode and the second electrode are used for connecting external voltage.
Optionally, the thickness of the light-transmitting medium layer is 500 micrometers, and the thickness of the reflective metal layer is 200 nanometers.
A metamaterial absorbent device comprising: the device comprises a laser emission module, a voltage module and a metamaterial absorber;
the laser emission module is arranged on the metal micro-resonator structure layer;
the voltage module is connected with the metal micro-resonator structural layer.
A metamaterial absorption system comprising a controller and a metamaterial absorption device;
and the controller is connected with both the laser emission module and the voltage module.
A preparation method of a metamaterial absorber comprises the following steps:
preparing a light-transmitting medium layer;
growing a layer of reflective metal layer on the back surface of the light-transmitting dielectric layer by a measurement and control sputtering process;
preparing a graphene layer by using a chemical vapor deposition method, and transferring the graphene layer to the front side of the light-transmitting medium layer;
carrying out structured preparation on the graphene layer by utilizing a photoetching process to obtain a graphene structure layer;
and preparing a metal micro-resonator structure layer on the graphene structure layer by utilizing a photoetching process.
Optionally, the preparing a metal microresonator structural layer on the graphene structural layer by using a photolithography process specifically includes:
placing a photoetching plate on the graphene structure layer;
spin-coating a photoresist on the photoetching plate;
removing the photoetching plate, and carrying out exposure and development treatment on the photoresist to form an area which is not covered by the photoresist and an area which is covered by the photoresist on the graphene structure layer;
and growing a metal micro-resonator structure layer on the region which is not covered by the photoresist by utilizing a measurement and control sputtering process, and stripping the photoresist.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the metamaterial absorber provided by the invention introduces a design scheme that a metal micro-resonator structure layer with a bus topological structure and a graphene structure layer are mutually attached, the graphene structure layer and the metal micro-resonator structure layer form plasma resonance with terahertz electromagnetic waves under the action of external laser and/or external voltage, the terahertz electromagnetic waves are transmitted to a light-transmitting medium layer, the light-transmitting medium layer forms Fabry-Perot interference resonance, and the Fabry-Perot interference resonance formed by the plasma resonance and the light-transmitting medium layer is mutually coupled to absorb the terahertz electromagnetic waves. Under the working state, the electric conductivity of the graphene structure layer is changed by adjusting working parameters of external laser and/or external voltage, the change of the electric conductivity is used for adjusting the intensity of the plasma resonance, and further the mutual coupling intensity of the Fabry-Perot interference resonance and the plasma resonance is changed, so that the absorption intensity of the terahertz electromagnetic wave is controlled, and the effective and flexible regulation and control of the absorption rate and the absorption frequency of the terahertz electromagnetic wave are realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a structural side view of a metamaterial absorber according to one embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a single elementary metal unit of a metamaterial absorber according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating an array arrangement of a metal layer unit structure of a metamaterial absorber according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a single basic graphene unit of a metamaterial absorber according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating a basic graphene unit array arrangement of a metamaterial absorber according to an embodiment of the present invention;
FIG. 6 is an absorption spectrum of a metamaterial absorption device provided in the second embodiment of the present invention under the combined action of voltage and laser; fig. 6(a) is an absorption spectrum of a terahertz electromagnetic wave generated by applying the same voltage and 2 different laser power densities to a metamaterial absorber provided in the second embodiment of the present invention; fig. 6(d) is a graph of simulation effect obtained by the metamaterial absorber provided in the second embodiment of the present invention under the same conditions as fig. 6 (a); fig. 6(b) is an absorption spectrum of a terahertz electromagnetic wave obtained by irradiating a laser with the same power density and applying 2 different voltages by using the metamaterial absorber provided in the second embodiment of the present invention; fig. 6(e) is a graph of simulation effect obtained by the metamaterial absorber provided in the second embodiment of the present invention under the same conditions as fig. 6 (b);
fig. 6(c) is an absorption spectrum of a terahertz electromagnetic wave obtained by applying 2 different voltages to a metamaterial absorber provided in a second embodiment of the present invention after applying laser with the same power density; fig. 6(f) is a simulation effect diagram of the metamaterial absorber provided in the second embodiment of the present invention under the same conditions as fig. 6 (c);
FIG. 7 is a structural view of a metamaterial absorbent device according to a second embodiment of the present invention;
FIG. 8 is a block diagram of a metamaterial absorbent system as provided in a third embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a metamaterial absorber according to a fourth embodiment of the present invention.
Description of the symbols:
the structure comprises a 1-metal micro-resonator structure layer, a 2-graphene structure layer, a 3-amethyst glass layer, a 4-reflection metal layer, a 5-bus metal strip, a 6-fifth branch metal strip, a 7-fifth metal block, an 8-fourth branch metal strip, a 9-fourth metal block, a 10-third branch metal strip, a 11-third metal block, a 12-second branch metal strip, a 13-second metal block, a 14-first branch metal strip, a 15-first metal block, a 16-transverse graphene region, a 17-left graphene region, a 18-right graphene region, a 19-left blank region, a 20-right blank region and a 21-middle graphene region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a metamaterial absorber, a metamaterial device, a metamaterial system and a metamaterial preparation method, and the metamaterial absorber, the metamaterial device and the metamaterial system can effectively and flexibly regulate and control the absorptivity and the absorption frequency of terahertz electromagnetic waves through a modulation mode combining externally applied laser and voltage.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The artificial metamaterial can realize perfect absorption when being applied to the absorption of electromagnetic waves, and is deeply loved by the majority of scientific researchers. With the pursuit of scientific research workers on the absorption regulation function, the metamaterial absorber is continuously expanded to the field of double-excitation dynamic adjustment. A bus topological structure metamaterial absorber combining laser and voltage regulation and control is a field of great interest in optical research.
Example one
As shown in fig. 1, the present embodiment provides a metamaterial absorber, including: a light-transmitting medium layer 3, as a preferred embodiment, the light-transmitting medium layer 3 of this embodiment specifically uses an amethyst glass layer; the reflecting metal layer 4 is arranged on the lower surface of the amethyst glass layer 3; the metal micro-resonator structure layer 1 is arranged on the graphene structure layer 2; the metal microresonator structure layer 1 is a metal layer having a bus topology.
The metal microresonator structure layer 1 with bus topology includes at least one base metal unit, one of which is a microresonator.
Optionally, as shown in fig. 2, the basic metal unit of this embodiment includes one bus metal strip 5, 5 branch metal strips, and 5 metal blocks. In this embodiment, the 5 branch metal strips are sequentially a first branch metal strip 14, a second branch metal strip 12, a third branch metal strip 10, a fourth branch metal strip 8, and a fifth branch metal strip 6 from left to right, wherein the lengths of the first branch metal strip 14, the third branch metal strip 10, and the fifth branch metal strip 6 are the same and are greater than the lengths of the second branch metal strip 12 and the fourth branch metal strip 8. In this embodiment, the 5 metal blocks are sequentially a first metal block 15, a second metal block 13, a third metal block 11, a fourth metal block 9 and a fifth metal block 7 from left to right, where the first metal block 15, the third metal block 11 and the fifth metal block 7 are oval metal blocks, and the second metal block 13 and the fourth metal block 9 are rectangular metal blocks.
Further, as shown in fig. 2, one end of each of the 5 branch metal strips is connected to the horizontally disposed bus metal strip 5, the 5 branch metal strips are disposed below the horizontally disposed bus metal strip 5, and the other end of each branch metal strip is connected to one metal block, that is, in the embodiment, the first branch metal strip 14 is connected to the first metal block 15, the second branch metal strip 12 is connected to the second metal block 13, the third branch metal strip 10 is connected to the third metal block 11, the fourth branch metal 8 is connected to the fourth metal block 9, and the fifth branch metal strip 6 is connected to the fifth metal block 7.
As a preferred embodiment, when the metal microresonator structure layer includes a plurality of basic metal units, the basic metal units are connected to each other by bus bars 5 and are arranged in an array, as shown in fig. 3.
Optionally, the graphene structure layer is provided with basic graphene units, the number of the basic graphene units is the same as the number of the basic metal units in the metal microresonator structure layer, and the basic graphene units are arranged according to the arrangement form of the basic metal units, as shown in fig. 5.
As a preferred embodiment, the basic graphene unit is divided into a graphene region and a blank region; the graphene area covers graphene, and the blank area does not cover graphene.
Further, as shown in fig. 4, the graphene regions in this embodiment include a lateral graphene region 16, a left graphene region 17, a middle graphene region 21, and a right graphene region 18; the blank areas include a left blank area 19 and a right blank area 20.
The basic graphene unit comprises a basic metal unit and a basic graphene unit, wherein the basic graphene unit comprises a plurality of metal blocks, each metal block comprises a bus metal strip, a branch metal strip and a metal block, the metal blocks are arranged in an even number, and the basic graphene unit comprises a plurality of basic graphene units.
As a preferred embodiment, in this embodiment, the bus bars 5 are projected to the lateral graphene region 16, the first branch bars 14 and the connected first metal blocks 15 are projected to the left graphene region 17, the third branch bars 10 and the connected third metal blocks 11 are projected to the middle graphene region 21, the fifth branch bars 6 and the connected fifth metal blocks 7 are projected to the right graphene region 18, the second branch bars 12 are projected to the left graphene region 17, the second metal blocks 13 are projected to the left blank region 19, the fourth branch bars 8 are projected to the right graphene region 18, and the fourth metal blocks 9 are projected to the right blank region 20.
Optionally, the metal micro-resonator further comprises an ion glue layer disposed on the metal micro-resonator structure layer 1; a first electrode is arranged on the ion glue layer, and a second electrode is arranged on the metal micro-resonator structure layer 1; the first electrode and the second electrode are used for connecting external voltage.
As a preferred embodiment, the thickness of the amethyst glass layer 3 in this example is 500 μm for generating fabry-perot interference; the thickness of the reflective metal layer 4 is 200 nanometers, and the reflective metal layer has the function of reflecting terahertz electromagnetic waves.
In the metamaterial absorber of the embodiment, under the action of external laser and/or external voltage, the graphene structure layer 2 and the metal micro-resonator structure layer 1 form plasma resonance with terahertz electromagnetic waves; plasmon resonances can be transferred and coupled to each other between individual microresonator having a bus topology. When the terahertz electromagnetic wave is transmitted to the amethyst glass layer 3, Fabry-Perot interference resonance is formed on the amethyst glass layer 3; the plasma resonance and the Fabry-Perot interference resonance formed by the amethyst glass layer 3 are mutually coupled to absorb the terahertz electromagnetic wave. Under the working state, the electric conductivity of the graphene structure layer 2 is changed by adjusting working parameters of external laser and/or external voltage, the change of the electric conductivity is used for adjusting the intensity of the plasma resonance, and further the mutual coupling intensity of the Fabry-Perot interference resonance and the plasma resonance is changed, so that the absorption intensity of the terahertz electromagnetic wave is controlled, and the effective and flexible regulation and control of the absorption rate and the absorption frequency of the terahertz electromagnetic wave are realized.
Example two
Referring to fig. 7, the present embodiment provides a metamaterial absorption device, including: the laser emitting module, the voltage module and the metamaterial absorber are disclosed in the first embodiment.
And the laser emission module is arranged on the metal micro-resonator structure layer of the metamaterial absorber, and the voltage module is connected with the metal micro-resonator structure layer through the first electrode and the second electrode.
The metamaterial absorber in the embodiment comprises a plurality of basic absorption units, wherein each basic absorption unit comprises a micro-resonator, a basic graphene unit, an amethyst glass layer and a reflecting metal layer, wherein the amethyst glass layer and the reflecting metal layer are positioned at the lower layer of the basic graphene unit. In the regulation and control process, the multiple basic absorption units interact with each other to perform equal electromagnetic response mutual transmission and coupling, and the terahertz waves are absorbed together.
In this embodiment, the terahertz wave is vertically incident from the metal micro-resonator layer having the bus topology structure, passes through the graphene structure layer 2 and the amethyst glass layer 3, is finally reflected by the reflective metal layer 4, and then enters the amethyst layer 3, and the graphene structure layer 2 exits from the bus topology structure layer 1. Theoretically, in a frequency band with strong absorption rate, terahertz waves are left inside the absorber in the form of heat radiation.
In the embodiment, the laser emitting module emits laser with different power densities, the voltage module applies different voltages to the metamaterial absorber, and the terahertz time-domain spectroscopy tester is used for testing the change condition of the absorption spectrum line of the terahertz electromagnetic wave. The specific test contents comprise: irradiating the metamaterial absorber with 2 532nm lasers with different power densities at the same voltage, and testing the absorption condition and the modulation condition of an absorption peak of the terahertz electromagnetic wave by the metamaterial absorber in the embodiment; and applying 3 different voltages under the irradiation of 532nm laser with the same power density to test the absorption condition and the modulation condition of an absorption peak of the terahertz electromagnetic wave by the metamaterial absorber in the embodiment.
The metamaterial absorber is carried into a terahertz time-domain spectroscopy tester for testing, and terahertz electromagnetic wave beams are set to be incident from a metal micro-resonator structure layer with a bus topological structure, and an incident spectrum of terahertz electromagnetic waves is obtained through testing; when the terahertz electromagnetic wave is emitted from the metal micro-resonator structure layer with the bus topological structure, a reflection spectrum of the terahertz electromagnetic wave is obtained through testing, and finally the reflection spectrum is subtracted by the incident spectrum to obtain an absorption spectrum, as shown in fig. 6.
In this embodiment, the power density of the laser emitted from the laser emitting module is 0mW/cm2And 178mW/cm2The voltages applied by the voltage modules are 0V, 2V and 4V, respectively.
FIG. 6a isWhen the applied voltage is 0V, the power density of the laser irradiated on the metamaterial absorber is 0mW/cm2And 178mW/cm2Under the action, a terahertz time-domain spectroscopy tester is used for measuring the modulated absorption spectrum line to obtain the absorption spectrum of the terahertz electromagnetic wave under the action of applying the same voltage and 2 different laser power densities to the metamaterial absorber. As can be seen from fig. 6a, the absorption rate of the metamaterial absorber is improved from 60% to 88%, which is improved by 28%; the effect of the improved modulation of the absorption rate is also confirmed in the simulation, as shown in fig. 6d, the absorption rate of the metamaterial absorber is improved from 77% to 98%, and is improved by 21%. The actual measurement results of fig. 6a are approximately the same as the lifting effect of the simulation results of fig. 6 d.
FIG. 6b shows that the power density of the irradiated laser is 178mW/cm2During the process, under the action of applied voltages of 0V and 2V respectively, a terahertz time-domain spectroscopy tester is used for measuring the modulated absorption spectrum line, and the absorption spectrum of the terahertz electromagnetic wave under the conditions that the laser with the same power density and 2 different voltages are applied to the metamaterial absorber in the embodiment is obtained. As can be seen from FIG. 6b, the absorption rates of the metamaterial absorber at the absorption peak positions of the terahertz electromagnetic waves reach about 95%, but the absorption peak positions are shifted by 99GHz under the action of voltages of 0V and 2V. The modulation effect of this absorption peak position shift was also confirmed in the simulation, as shown in fig. 6e, the absorption rate of the metamaterial absorber at the absorption peak position was 98%, and the absorption peak was shifted by 80 GHz. The actual measurement results of fig. 6b are approximately the same as the absorption peak shift effect of the simulation results of fig. 6 e.
FIG. 6c shows that the power density of the irradiated laser is 178mW/cm2During the process, under the action of 2V and 4V applied voltages respectively, a terahertz time-domain spectroscopy tester is used for measuring the modulated absorption spectrum line, and the absorption spectrum of the terahertz electromagnetic wave under the conditions that the laser with the same power density and 2 different voltages are applied to the metamaterial absorber in the embodiment is obtained. As can be seen from fig. 6c, the absorption rate of the metamaterial absorber at the position of the absorption peak is reduced from 96% to 85%, and is reduced by 11%, so that amplitude reduction modulation of the absorption rate is realized. The effect of amplitude reduction modulation of the absorption rate was also confirmed in the simulation, as shown in fig. 6f, for a metamaterialThe absorption rate of the material absorber at the absorption peak position is reduced from 96% to 77%, which is reduced by 19%. The actual measurement results of fig. 6c are approximately the same as the clipping effect of the simulation results of fig. 6 f.
EXAMPLE III
Referring to fig. 8, the present embodiment provides a meta-material absorption system, which includes a controller and a meta-material absorption apparatus as shown in the second embodiment.
The controller is respectively connected with the laser emission module and the voltage module in the metamaterial absorption device; the controller is used for controlling parameters such as the wavelength and the power density of the laser output by the laser emitting module, and the controller is also used for controlling the voltage value output by the voltage module. The controller controls the working parameters of the laser and the voltage to realize effective and flexible regulation and control of the absorption rate and the absorption frequency of the terahertz electromagnetic wave by the metamaterial absorber.
Example four
Referring to fig. 9, the present embodiment provides a method for manufacturing a metamaterial absorber, including:
step 401: and preparing a light-transmitting medium layer.
Step 402: and a layer of reflective metal layer is grown on the back surface of the light-transmitting dielectric layer by a sputtering control process.
Step 403: and preparing a graphene layer by using a chemical vapor deposition method, and transferring the graphene layer to the front side of the light-transmitting medium layer.
Step 404: and carrying out structured preparation on the graphene layer by utilizing a photoetching process to obtain the graphene structure layer.
Step 405: and preparing a metal micro-resonator structure layer on the graphene structure layer by utilizing a photoetching process.
As a preferred embodiment, a metal microresonator structural layer is prepared on a graphene structural layer by using a photolithography process, which specifically includes:
and placing a photoetching plate on the graphene structure layer.
And spin-coating photoresist on the photoetching plate.
And removing the photoetching plate, and carrying out exposure and development treatment on the photoresist to form an area which is not covered by the photoresist and an area which is covered by the photoresist on the graphene structure layer.
And growing a metal micro-resonator structure layer on the region which is not covered by the photoresist by utilizing a measurement and control sputtering process, and stripping the photoresist.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A metamaterial absorber, comprising:
a light-transmitting medium layer;
the reflecting metal layer is arranged on the lower surface of the light-transmitting medium layer;
the graphene structure layer is arranged on the upper surface of the light-transmitting medium layer;
the metal micro-resonator structure layer is arranged on the graphene structure layer; the metal micro-resonator structure layer is a metal layer with a bus topological structure;
under the action of external laser and/or external voltage, the graphene structure layer and the metal micro-resonator structure layer form plasma resonance with terahertz electromagnetic waves;
when terahertz electromagnetic waves are transmitted to the light-transmitting medium layer, the light-transmitting medium layer forms Fabry-Perot interference resonance, and the plasma resonance is mutually coupled with the Fabry-Perot interference resonance formed by the light-transmitting medium layer;
in the working state, the intensity of the plasma resonance is adjusted by adjusting working parameters of external laser and/or external voltage so as to change the mutual coupling intensity of the Fabry-Perot interference resonance and the plasma resonance and further control the electromagnetic response of the terahertz electromagnetic wave.
2. The metamaterial absorber of claim 1, wherein the metallic microresonator structural layer comprises at least one elemental metal unit; the basic metal unit comprises a bus metal strip, a plurality of branch metal strips and metal blocks with the same number as the branch metal strips;
one end of each branch metal strip is connected with the bus metal strip, and the other end of each branch metal strip is connected with one metal block.
3. The metamaterial absorber of claim 2, wherein when the metal microresonator structure layer comprises a plurality of elemental metal units, the elemental metal units are connected to each other by the bus metal bars and are arranged in an array.
4. The metamaterial absorber of claim 2, wherein the graphene structure layer is provided with elementary graphene units; the number of the basic graphene units is the same as that of the basic metal units, and the basic graphene units are arranged according to the arrangement form of the basic metal units;
the basic graphene unit is divided into a graphene area and a blank area; the graphene area is an area covered with graphene, and the blank area is not covered with graphene;
the graphene area of the basic graphene unit is a projection area of the bus metal strips, the branch metal strips and the metal blocks arranged in an even order in the basic metal unit, and the blank area of the basic graphene unit is a projection area of the metal blocks arranged in an odd order in the basic metal unit.
5. The metamaterial absorber of claim 1, further comprising an ion glue layer disposed on the metal microresonator structure layer;
a first electrode is arranged on the ion glue layer, and a second electrode is arranged on the metal micro-resonator structure layer;
the first electrode and the second electrode are used for connecting external voltage.
6. The metamaterial absorber of claim 1, wherein the light-transmissive dielectric layer has a thickness of 500 microns and the reflective metal layer has a thickness of 200 nm.
7. A metamaterial absorbent device, comprising: a laser emitting module, a voltage module and a metamaterial absorber as claimed in claim 1;
the laser emission module is arranged on the metal micro-resonator structure layer;
the voltage module is connected with the metal micro-resonator structural layer.
8. A metamaterial absorbent system comprising a controller and a metamaterial absorbent device as in claim 7;
and the controller is connected with both the laser emission module and the voltage module.
9. A method for preparing the metamaterial absorber as claimed in claim 1, comprising:
preparing a light-transmitting medium layer;
growing a layer of reflective metal layer on the back surface of the light-transmitting dielectric layer by a measurement and control sputtering process;
preparing a graphene layer by using a chemical vapor deposition method, and transferring the graphene layer to the front side of the light-transmitting medium layer;
carrying out structured preparation on the graphene layer by utilizing a photoetching process to obtain a graphene structure layer;
and preparing a metal micro-resonator structure layer on the graphene structure layer by utilizing a photoetching process.
10. The method for manufacturing a metamaterial absorber as claimed in claim 9, wherein the step of manufacturing a metal micro-resonator structure layer on the graphene structure layer by using a photolithography process specifically comprises:
placing a photoetching plate on the graphene structure layer;
spin-coating a photoresist on the photoetching plate;
removing the photoetching plate, and carrying out exposure and development treatment on the photoresist to form an area which is not covered by the photoresist and an area which is covered by the photoresist on the graphene structure layer;
and growing a metal micro-resonator structure layer on the region which is not covered by the photoresist by utilizing a measurement and control sputtering process, and stripping the photoresist.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116073097A (en) * | 2023-03-14 | 2023-05-05 | 福州大学 | Terahertz broadband filter based on double-layer metamaterial and preparation method thereof |
| CN116154484A (en) * | 2023-04-04 | 2023-05-23 | 湖南工商大学 | Binary channels terahertz is absorption device entirely now |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016209666A2 (en) * | 2015-06-15 | 2016-12-29 | University Of Maryland, College Park | Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabrication |
| CN207587977U (en) * | 2017-10-30 | 2018-07-06 | 中国计量大学 | Double frequency Terahertz absorber based on graphene |
| CN109509986A (en) * | 2018-12-20 | 2019-03-22 | 厦门大学 | Graphene Terahertz multifrequency wave absorbing device based on metal spiral micro-structure |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
| CN111555038A (en) * | 2020-05-19 | 2020-08-18 | 江苏大学 | Tunable terahertz metamaterial absorber |
-
2021
- 2021-07-05 CN CN202110756366.1A patent/CN113328259B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016209666A2 (en) * | 2015-06-15 | 2016-12-29 | University Of Maryland, College Park | Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabrication |
| CN207587977U (en) * | 2017-10-30 | 2018-07-06 | 中国计量大学 | Double frequency Terahertz absorber based on graphene |
| CN109509986A (en) * | 2018-12-20 | 2019-03-22 | 厦门大学 | Graphene Terahertz multifrequency wave absorbing device based on metal spiral micro-structure |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
| CN111555038A (en) * | 2020-05-19 | 2020-08-18 | 江苏大学 | Tunable terahertz metamaterial absorber |
Non-Patent Citations (2)
| Title |
|---|
| XIN YAN等: "Graphene-bridged topological network metamaterials with perfect modulation applied to dynamic cloaking and meta-sensing", OPTICS EXPRESS, pages 1 - 12 * |
| 顾钰等: "基于石墨烯结合亚波长金属结构的 太赫兹宽带动态吸收器", 光电工程, pages 60 - 64 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116073097A (en) * | 2023-03-14 | 2023-05-05 | 福州大学 | Terahertz broadband filter based on double-layer metamaterial and preparation method thereof |
| CN116154484A (en) * | 2023-04-04 | 2023-05-23 | 湖南工商大学 | Binary channels terahertz is absorption device entirely now |
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