CN116154439B - All-air-filled substrate integrated ridge gap waveguide and transition conversion device from microstrip to rectangular waveguide - Google Patents
All-air-filled substrate integrated ridge gap waveguide and transition conversion device from microstrip to rectangular waveguide Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
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Abstract
The invention discloses an all-air-filled substrate integrated ridge gap waveguide, which is composed of an upper substrate, a middle substrate and a lower substrate; the lowest layer is a dielectric substrate with ridges, the height of the added ridges is the same as the thickness of the middle layer substrate, and silicon through holes with different periods are loaded in the lowest layer substrate; the upper two substrates are formed by flip chip technology through ball grid array solder balls, the middle substrate is composed of two separated substrates, and an electromagnetic band gap structure is formed by the middle substrate, the BGA solder balls and the uppermost substrate. In order to facilitate system integration with other passive/active devices, the invention also discloses a transition conversion device from microstrip to rectangular waveguide adopting the BGA-RGW structure. According to the invention, the ground plane of the ridge clearance waveguide is raised through the TSV, so that the processing is easier; the invention also has the advantages of low profile, light weight, small volume, easy integration and the like, and can be widely applied to the field of millimeter wave circuit design in the antenna.
Description
Technical Field
The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to an all-air-filled substrate integrated ridge gap waveguide and a transition conversion device from microstrip to rectangular waveguide.
Background
With the continuous and intensive research of scientific researchers on wireless communication technology, the development of the wireless communication technology is rapid, the updating iteration of a wireless communication system is rapid, and the transmission efficiency of a novel wireless communication system is higher even when the novel wireless communication system processes more and more complex structures. At present, low-frequency band resources are fully utilized, but at the same time, the defects of low-frequency spectrum resource congestion and the like are brought, and the advantages of abundant frequency spectrum resources, relatively good signal to noise ratio and the like of a high-frequency band communication system are added, so that researchers are enabled to increase research and utilization of the high-frequency band wireless communication system. The higher frequency band loss affects more than the lower frequency band and the structure is smaller in size. At this time, low loss and high integration are two factors important for high frequency.
In 2009, gap Waveguide (GWG) was proposed by the professor p. -s.ki ldal in sweden. Compared with the traditional transmission line and waveguide, the GWG transmits electromagnetic waves in air, so that the GWG has the advantages of low loss in millimeter wave bands and the like. There are three main types of GWG: ridge gap waveguides (Ridge Gap Waveguide, RGW), slot gap waveguides (Groove Gap Waveguide, GGW), and microstrip gap waveguides. GWG may be composed of all metals or a mixture of metals and printed circuit boards (Printed Circuit Board, PCB). The majority of transmissions in RGW are quasi-transverse electromagnetic (Transverse Electromagnetic, TEM) modes, and the majority of transmissions in microstrip and slot gap waveguides are quasi-transverse electric (Transverse Electric, TE) modes. The electromagnetic bandgap (Electromagnetic Bandgap, EBG) structure of GWG is non-contact and the transmission quality is also less sensitive to machining errors. Generally GWG is to limit leakage of electromagnetic waves by loading EBG periodic structures around it so that the electromagnetic waves are transmitted toward our intended direction. The EBG periodic structure used initially is a periodic arrangement of metal pins. With further study of the periodic structure, a single-hole mushroom type periodic structure and a porous mushroom type periodic structure are proposed. In the high frequency band, in order to achieve weight saving, miniaturization, and the like, researchers have proposed a Ball Grid Array (BGA) structure.
The structures such as the microstrip line and the strip line are easy to be combined with other planar circuits to improve the integration level of the device structure, but along with the increase of the frequency to a millimeter wave band, the radiation loss caused by the radiation performance of the microstrip line is not very small, and the performance of the whole system is often influenced due to great loss. For the waveguide structure, the dielectric loss is basically negligible because no radiation loss exists, the main loss exists as metal loss, and the loss is far smaller than the microstrip line. But its large size is disadvantageous for miniaturization. At this time, the transition structure from the microstrip to the rectangular waveguide plays an important role. If the microstrip line is directly used for connecting the microstrip with the waveguide to form the transition conversion structure, the loss is greatly increased due to the microstrip line with a large area, and the transmission efficiency and other performances of the whole transition structure are affected. At present, more structures realize conversion between a microstrip and a rectangular waveguide through one of ridge gap waveguides or groove gap waveguides. In order to solve the above problems, a transition structure from microstrip to rectangular waveguide needs to be studied.
Disclosure of Invention
The invention provides a full air-filled substrate integrated ridge gap waveguide and a transition conversion device from microstrip to rectangular waveguide, aiming at the defects in the prior art.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the integrated ridge gap waveguide is characterized in that the BGA-RGW structure is formed by superposing an upper substrate, a middle substrate and a lower substrate, wherein the upper substrate, the middle substrate, the lower substrate and the lower substrate are respectively a T substrate, an M substrate and a B substrate; the lower surface of the T substrate is a metallization layer and is welded with BGA solder balls which are periodically arranged; the M substrate consists of two separated substrates, an array pad corresponding to the BGA solder ball is arranged on the upper surface of the M substrate, and a metallization layer is arranged on the lower surface of the M substrate; the upper surface and the lower surface of the B substrate are both metallized layers, ridges with metallized surfaces are added on the B substrate, and TSVs with different periods are loaded in the B substrate; an air gap is formed as an electromagnetic wave transmission path between the lower surface of the T substrate, the upper surface of the B substrate, the BGA solder balls, and the M substrate, and the ridge is located in the air gap.
In order to optimize the technical scheme, the specific measures adopted further comprise:
further, the arrangement period of the BGA solder balls is p, and the diameter of the BGA solder balls is not more than 0.5p.
Further, the T substrate is mounted directly over the M substrate by flip chip technology.
Further, the lower surface of the T substrate is a metallization layer covered with a solder mask layer.
Further, the height of the ridge is the same as the thickness of the M substrate.
Further, the periods and the radii of the TSVs loaded by the TSVs right under the ridge and the TSVs loaded by other positions of the B substrate are different.
The invention also provides a transition conversion device from microstrip to rectangular waveguide, which is used for transition from microstrip, BGA-GGW, BGA-RGW to rectangular waveguide, and is characterized by comprising: MSL substrate, gradual change microstrip line, BGA-GGW, BGA-RGW, probe type metal block and rectangular waveguide;
the gradual change microstrip line is arranged on the MSL substrate, is connected with the BGA-GGW and is matched with the BGA-GGW in impedance;
the BGA-GGW and BGA-RGW structures are integrated, and the whole structure is formed by overlapping upper, middle and lower three layers of substrates, namely a T substrate, an M substrate and a B substrate; the lower surface of the T substrate is a metallization layer and is welded with BGA solder balls which are periodically arranged; the M substrate is composed of two separated substrates, a groove is formed between the two substrates, an array bonding pad corresponding to the BGA solder ball is arranged on the upper surface of the M substrate, and a metallization layer is arranged on the lower surface of the M substrate; the upper surface and the lower surface of the B substrate are both metallized layers, and TSVs are loaded in the B substrate; an air gap serving as an electromagnetic wave transmission path is formed among the lower surface of the T substrate, the upper surface of the B substrate, the BGA solder balls and the M substrate; adding surface metallized ridges on the B substrate in the BGA-RGW portion, said ridges being located in the air gaps; in the BGA-GGW part, the B substrate is not added with a ridge;
the probe type metal block is connected between the BGA-RGW and the rectangular waveguide and is used for realizing impedance matching between the BGA-RGW and the rectangular waveguide.
Further, a plurality of metal columns are vertically arranged below the tail end of the gradual change microstrip line, a plurality of metal pins are connected between the tail end of the gradual change microstrip line and the BGA-GGW, and the metal columns and the metal pins are used for realizing impedance matching between the gradual change microstrip line and the BGA-GGW.
Further, the M substrate slot width of the BGA-GGW portion is greater than the M substrate slot width of the BGA-RGW portion.
Further, the ridge at the junction of the BGA-RGW portion and the BGA-GGW portion is stepped.
The beneficial effects of the invention are as follows: according to the invention, the ground plane of the ridge clearance waveguide is raised through the TSV, so that the processing is easier; the invention also has the advantages of low profile, light weight, small volume, easy integration with a planar circuit and the like, can be applied to active chips such as front-end transceivers of embedded wafer-level packages, can be widely applied to the field of millimeter wave circuit design in antennas, and is applied to platforms such as small unmanned aerial vehicles with higher requirements on size and weight.
Drawings
FIG. 1 is a schematic illustration of an all air-filled substrate integrated ridge gap waveguide in accordance with the present invention.
Fig. 2 is a schematic diagram of a microstrip to rectangular waveguide transition device according to the present invention.
Fig. 3a, 3b and 3c are a perspective view, a longitudinal section view and a cross section view, respectively, of a BGA-RGW according to the present invention.
Fig. 4 is a three-dimensional schematic diagram of the BGA-RGW to rectangular waveguide transition according to the present invention.
Fig. 5 is a three-dimensional schematic diagram of the transition from BGA-GGW to rectangular waveguide according to the present invention.
Fig. 6 is a three-dimensional schematic diagram of a microstrip to rectangular waveguide transition according to the present invention.
Fig. 7a and fig. 7b are simulation diagrams of the transmission performance of the BGA-RGW and microstrip-to-rectangular waveguide transition conversion device according to the present invention, respectively.
The reference numerals are as follows: 1. BGA solder balls; 2. TSV1; 3. TSV2; 4. an electromagnetic wave transmission path; 5. an air gap; 6. a T substrate; 7. an M substrate; 8. a B substrate; 9. a ridge; 10. a metallization layer; 11. a metallization layer; 12. a metallized surface; 13. a metallization layer; 14. a metal column; 15. a metal pin; 16. a probe-type metal block; 17. a gradual change microstrip line; 18. MSL substrate.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings.
Example 1
The invention provides an all-air-filled substrate integrated ridge gap waveguide structure (BGA-RGW), the whole structure of which is shown in figures 1 and 3 a-3 c, and the structure is formed by vertically installing an upper substrate, a middle substrate and a lower substrate through BGA solder balls 1. The upper, middle and lower three-layer substrates are referred to as a T substrate 6, an M substrate 7 and a B substrate 8, respectively, according to the relative positions of the substrates. The BGA solder balls 1 are soldered to the bottom layer of the T-substrate 6, and then the T-substrate 6 is mounted directly above the M-substrate 7 by flip-chip technology. Depending on the position of the BGA, an array of metal pads is designed on the top layer of the M substrate 7. The lower surfaces of the T substrate 6 and the M substrate 7 are both a metallization layer 1011, and the bottom metal of the T substrate 6 is also covered with a solder mask layer which is convenient for ball placement of the BGA solder balls 1. The upper and lower surfaces of the B substrate 8 are both metallized layers 13, and the metallized layers 10 and 13 are grounded metal surfaces. The ridge 9 of the BGA-RGW is loaded on the B substrate 8, between the array of BGA solder balls, as part of the B substrate 8. The surface of the ridge 9 is also a metallization surface 12, through silicon vias (Through Silicon Vias, TSVs) are loaded in the B substrate 8, the periods and the radii of the TSVs loaded directly below the ridge 9 and other positions of the B substrate 8 are different, the TSVs 23 are loaded below the ridge 9, and the TSVs 12 are loaded in other positions of the B substrate. The ridge 9 may be formed by adding the TSV23 to the dielectric substrate, or may be formed by loading metal surfaces on the respective surfaces of the dielectric ridge 9. The air gap 5 is supported by the BGA solder balls 1 between the bottom layer of the T-substrate 6 and the top layer of the B-substrate 8, and the M-substrate 7.
Specifically, the operating frequency of the BGA-RGW may be designed to be in the millimeter wave band, and the T substrate 6, the M substrate 7, and the B substrate 8 may be selected from the same or different substrate materials.
In particular, for a BGA periodic unit, whose period is p, to avoid bragg scattering, the period p is typically chosen to be less than half the wavelength. In order to maintain a safe gap between two adjacent solder balls during the flip-chip process, it is suggested that the diameter of the BGA solder ball 1 is not greater than 0.5p.
The heights of the T substrate 6, the BGA solder balls 1, the M substrate 7 and the B substrate 8 are h respectively 1 ，h 2 ，h 3 And h 3 The height of the ridge 9 is h 3 . The width and length of BGA-RGW are W and L, respectively. The width of the ridge 9 is w2=0.32 mm and the distance of the ridge 9 from the BGA solder ball 1 is w1=0.8 mm. For the BGA periodic unit, the period was p=0.6 mm, and a solder ball with a diameter of 0.3mm was selected. The radius r3=0.015 mm of TSV 12, the period is 0.24mm, the radius r4=0.03 mm of TSV23, and the period is 0.16mm. In addition, the T substrate 6, the M substrate 7 and the B substrate 8 are selected from HRS, epsilon r =11.9; other parameters are: h is a 1 ＝0.2mm，h 2 ＝0.16mm，h 3 ＝0.195mm。
Example two
In order to facilitate system integration with other passive/active devices, the invention also provides a transition conversion device from microstrip to rectangular waveguide, as shown in fig. 2, 4 to 6. On the basis of integrating the ridge gap waveguide by the all-air-filled substrate, a microstrip line-to-groove gap waveguide structure is added at the front end, and the groove gap waveguide (Groove Gap Waveguide, GGW) formed by the graded microstrip line, the metal pin and the BGA can also be simply called BGA-GGW; the rear end is connected with the vertical rectangular waveguide and is connected to the rectangular waveguide through the probe type metal block.
The transition structure comprises an MSL substrate 18, a gradual microstrip line 17, 4 metal columns 14, 2 metal pins 15, a probe type metal block 16, BGA-GGW and BGA-RGW. For BGA-RGW, the structure is the same as the all-air-filled substrate integrated ridge gap waveguide structure proposed in embodiment one, and considering that the effect of loading metal surfaces on each surface of the dielectric ridge is similar to that of loading through silicon vias on the dielectric ridge, the metal surfaces can be loaded on the surface of the dielectric ridge in the transitional conversion structure without penetrating the TSV inside the ridge 9. BGA-GGW is similar to BGA-RGW in structure, the groove width of BGA-GGW part is wider than that of BGW-RGW, no metal ridge 9 is arranged in the groove, and the two ends of BGA-GGW part in the transition structure are respectively provided with a step part of the metal ridge 9 and two metal pins 15; in the MSL portion, the graded microstrip line 17 is vertically disposed directly above the MSL substrate 18, and the four metal pillars 14 are vertically disposed below the end of the graded microstrip line 17 (inside the MSL substrate 18), and the B substrate 8 is directly below the MSL substrate 18. Two metal pins 15 of the same size are placed behind the MSL part, i.e. inside the BGA-GGW; wherein the gradual change microstrip line 17, the metal column 14 and the metal pin 15 realize the impedance matching function between the microstrip and the BGA-GGW; the stepped ridge 9 achieves impedance matching between BGA-GGW and BGA-RGW; the probe-type metal block 16 achieves impedance matching between the BGA-RGW and the rectangular waveguide.
The specific structural parameters in the figure are as follows: w (w) R ＝0.16mm，w r ＝1.22mm，l r ＝3.54mm，w r ＝1.8mm，w c ＝0.8mm，l c ＝3.54mm，w 1 ＝1.27mm，l 1 ＝2.54mm，w ggw ＝2.42mm，t＝0.28mm，w 1tr ＝0.4mm，l 1tr ＝2.6mm，w 2tr ＝0.6mm，l 2tr ＝2.06mm，w 3tr ＝1.0mm，l 3tr ＝1.2mm，w MSL ＝0.28mm，l MSL ＝1.0mm，w pin ＝0.6mm，h 1 ＝0.2mm，h 2 ＝0.08mm，h 3 ＝0.195mm，p＝0.6mm，r3＝0.015mm，r5＝0.05mm。
Fig. 7a and 7b are respectively a BGA-RGW transmission performance result simulated according to the present invention and a transmission performance simulation result of a transition converting device simulated according to the present invention. As can be seen in FIG. 7a, the BGA-RGW passband frequency range in embodiment one is 69-106GHz. As can be seen from fig. 7b, the transition conversion device in the second embodiment can realize normal transmission of electromagnetic waves in the frequency range of 85.5GHz-104 GHz.
It should be noted that the terms like "upper", "lower", "left", "right", "front", "rear", and the like are also used for descriptive purposes only and are not intended to limit the scope of the invention in which the invention may be practiced, but rather the relative relationship of the terms may be altered or modified without materially altering the teachings of the invention.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.
Claims (6)
1. The integrated ridge gap waveguide of the full air filling substrate is characterized in that the BGA-RGW structure is formed by superposing an upper substrate, a middle substrate and a lower substrate, wherein the upper substrate, the middle substrate, the lower substrate and the lower substrate are respectively a T substrate (6), an M substrate (7) and a B substrate (8); the lower surface of the T substrate (6) is a metallization layer and is welded with BGA solder balls (1) which are periodically arranged; the M substrate (7) is composed of two separated substrates, an array pad corresponding to the BGA solder ball (1) is arranged on the upper surface of the M substrate (7), and a metallization layer is arranged on the lower surface of the M substrate (7); the upper surface and the lower surface of the B substrate (8) are both metalized layers, ridges (9) with metalized surfaces are added on the B substrate (8), the height of each ridge (9) is the same as the thickness of the M substrate (7), TSVs with different periods are loaded in the B substrate (8), and the periods and the radiuses of the TSVs directly under the ridges (9) and the TSVs loaded at other positions of the B substrate (8) are different; an air gap (5) serving as an electromagnetic wave transmission path (4) is formed among the lower surface of the T substrate (6), the upper surface of the B substrate (8), the BGA solder ball (1) and the M substrate (7), and the ridge (9) is positioned in the air gap (5).
2. A fully air-filled substrate integrated ridge interstitial waveguide according to claim 1, wherein: the arrangement period of the BGA solder balls (1) is as followspThe diameter of the BGA solder ball (1) is not more than 0.5p。
3. A fully air-filled substrate integrated ridge interstitial waveguide according to claim 1, wherein: the T substrate (6) is assembled directly above the M substrate (7) by flip chip technology.
4. A fully air-filled substrate integrated ridge interstitial waveguide according to claim 1, wherein: the lower surface of the T substrate (6) is a metallization layer covered with a solder mask layer.
5. A microstrip to rectangular waveguide transition device for transitioning from a microstrip, BGA-GGW, BGA-RGW to a rectangular waveguide, comprising: the device comprises an MSL substrate (18), a gradual change microstrip line (17), BGA-GGW, BGA-RGW, a probe type metal block (16) and a rectangular waveguide;
the gradual change microstrip line (17) is arranged on the MSL substrate (18), and the gradual change microstrip line (17) is connected with the BGA-GGW and is matched with the BGA-GGW in impedance;
the BGA-GGW and BGA-RGW structures are integrated, and the integral structure is formed by overlapping upper, middle and lower three layers of substrates, namely a T substrate (6), an M substrate (7) and a B substrate (8); the lower surface of the T substrate (6) is a metallization layer and is welded with BGA solder balls (1) which are periodically arranged; the M substrate (7) is composed of two separated substrates, a groove is formed between the two substrates, an array bonding pad corresponding to the BGA solder ball (1) is arranged on the upper surface of the M substrate (7), and a metallization layer is arranged on the lower surface of the M substrate (7); the upper surface and the lower surface of the B substrate (8) are both metallized layers, and TSVs with different periods are loaded in the B substrate (8); an air gap (5) serving as an electromagnetic wave transmission path (4) is formed among the lower surface of the T substrate (6), the upper surface of the B substrate (8), the BGA solder ball (1) and the M substrate (7); in the BGA-RGW part, a surface metalized ridge (9) is added on the B substrate (8), the height of the ridge (9) is the same as the thickness of the M substrate (7), and the ridge (9) is positioned in the air gap (5); in the BGA-GGW part, the B substrate (8) is not added with a ridge;
the groove width of the M substrate (7) of the BGA-GGW part is larger than that of the M substrate (7) of the BGA-RGW part; the ridge (9) at the joint of the BGA-RGW part and the BGA-GGW part is in a ladder shape;
the probe-type metal block (16) is connected between the BGA-RGW and the rectangular waveguide and is used for realizing impedance matching between the BGA-RGW and the rectangular waveguide.
6. A microstrip to rectangular waveguide transition from a microstrip transition from a rectangular waveguide as in claim 5 wherein: a plurality of metal columns (14) are vertically arranged below the tail end of the gradual change microstrip line (17), a plurality of metal pins (15) are connected between the tail end of the gradual change microstrip line (17) and the BGA-GGW, and the metal columns (14) and the metal pins (15) are used for realizing impedance matching between the gradual change microstrip line (17) and the BGA-GGW.
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