CN116134989A - 一种存储器及电子设备 - Google Patents

一种存储器及电子设备 Download PDF

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Publication number
CN116134989A
CN116134989A CN202080104784.6A CN202080104784A CN116134989A CN 116134989 A CN116134989 A CN 116134989A CN 202080104784 A CN202080104784 A CN 202080104784A CN 116134989 A CN116134989 A CN 116134989A
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CN
China
Prior art keywords
layer
memory
magnetic structure
free layer
mtj
Prior art date
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Pending
Application number
CN202080104784.6A
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English (en)
Inventor
秦青
周雪
刘熹
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN116134989A publication Critical patent/CN116134989A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

本申请实施例提供一种存储器及电子设备，涉及存储器技术领域，可以解决MTJ中自由层翻转需要的电流大的问题。该存储器包括设置于所述存储器的存储区域内阵列分布的多个存储单元以及位线，所述存储单元包括晶体管以及与所述晶体管连接的磁隧道结MTJ元件；所述MTJ元件设置于所述晶体管的源极或者漏极与所述位线之间的电流传输路径上；所述MTJ元件包括依次层叠设置的钉扎层、参考层、隧穿层和自由层；所述钉扎层的磁化方向平行于所述MTJ中各层的堆叠方向；所述存储器还包括设置于所述电流传输路径上，且与所述MTJ元件接触的第一磁性结构；其中，所述第一磁性结构的磁化方向与所述钉扎层的磁化方向的夹角为(90°，180°]。

Description

PCT国内申请，说明书已公开。

Claims (16)

  1. PCT国内申请，权利要求书已公开。
CN202080104784.6A 2020-11-30 2020-11-30 一种存储器及电子设备 Pending CN116134989A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/132884 WO2022110187A1 (zh) 2020-11-30 2020-11-30 一种存储器及电子设备

Publications (1)

Publication Number Publication Date
CN116134989A true CN116134989A (zh) 2023-05-16

Family

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Application Number Title Priority Date Filing Date
CN202080104784.6A Pending CN116134989A (zh) 2020-11-30 2020-11-30 一种存储器及电子设备

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Country Link
US (1) US20230298648A1 (zh)
EP (1) EP4239636A4 (zh)
CN (1) CN116134989A (zh)
WO (1) WO2022110187A1 (zh)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082951B2 (en) * 2011-02-16 2015-07-14 Avalanche Technology, Inc. Magnetic random access memory with perpendicular enhancement layer
US9871190B2 (en) * 2014-04-28 2018-01-16 Avalanche Technology, Inc. Magnetic random access memory with ultrathin reference layer
KR20160004744A (ko) * 2014-07-04 2016-01-13 에스케이하이닉스 주식회사 반도체 메모리를 포함하는 전자 장치
SG11201700861XA (en) * 2014-09-25 2017-03-30 Agency Science Tech & Res Magnetic element and method of fabrication thereof
KR20160122916A (ko) * 2015-04-14 2016-10-25 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
KR20170047683A (ko) * 2015-10-23 2017-05-08 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
EP3460811B1 (en) * 2017-09-20 2020-06-17 IMEC vzw Magnetic layer structure for magnetic tunnel junction device
US10726892B2 (en) * 2018-12-06 2020-07-28 Sandisk Technologies Llc Metallic magnetic memory devices for cryogenic operation and methods of operating the same

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Publication number Publication date
EP4239636A4 (en) 2024-01-10
US20230298648A1 (en) 2023-09-21
EP4239636A1 (en) 2023-09-06
WO2022110187A1 (zh) 2022-06-02

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