CN116134603A

CN116134603A - Molded interconnect device

Info

Publication number: CN116134603A
Application number: CN202180059587.1A
Authority: CN
Inventors: 金荣申
Original assignee: Ticona LLC
Current assignee: Ticona LLC
Priority date: 2020-07-28
Filing date: 2021-07-14
Publication date: 2023-05-16
Also published as: WO2022026178A1; KR20230042702A; US11728065B2; TW202224098A; US20220037050A1; EP4189735A1; JP2023539000A

Abstract

A molded interconnect device is provided that includes a substrate and a conductive element disposed on the substrate. The substrate includes a polymer composition including a polymer matrix including a thermotropic liquid crystalline polymer and about 10 parts by weight to about 80 parts by weight per 100 parts by weight of the polymer matrix. The mineral filler has an average diameter of about 25 microns or less. The polymer composition comprises copper in an amount of about 1,000ppm or less and chromium in an amount of about 2,000ppm or less, and also exhibits about 1 x 10 as determined according to IEC62631-3-1:2016 ¹⁴ Ohmic or greater surface resistivity.

Description

Molded interconnect device

Cross Reference to Related Applications

U.S. provisional patent application Ser. No. 63/057,345 (application day 2020, 7/28), 63/057,349 (application day 2020, 7/28), 63/057,353 (application day 2020, 7/28), and U.S. patent applications Ser. No. 17/178,292 (application day 2021, 2/18), 17/178,295 (application day 2021, 2/18), 17/178,312 (application day 2021, 2/18), and 17/184,948 (application day 2021, 2/25) are all herein incorporated by reference.

Background

To form various electronic components, molded interconnect devices (MID, molded interconnect device) are typically formed that include a plastic substrate on which conductive elements or paths are formed. Thus, such MID devices are three-dimensional molded articles with integrated printed conductors or circuit layouts. MIDs are typically formed using a laser direct structuring ("LDS" laser direct structuring) process in which a computer controlled laser beam is propagated over a plastic substrate to activate its surface at the location where the conductive path is located. Various materials have been proposed for forming plastic substrates for laser direct structuring devices. For example, one such material is polycarbonate, acrylonitrile butadiene styrene, and copper chromite (Cu ₂ CrO ₄ ) Is a blend of (a) and (b). In a laser direct structuring process, copper chromite is cleaved to release metal atoms which can be charged in a subsequent electroless copper plating processAs a nucleus for crystal growth. Despite the benefits, one of the limitations of laser direct structuring materials is that spinel crystals tend to adversely affect the properties of the composition in some cases. Furthermore, due to potential environmental concerns, it is increasingly desirable to minimize the use of heavy metals such as copper and chromium. Thus, there is a need for a molded interconnect device in which conductive elements can be easily formed without the use of conventional LDS processes.

Disclosure of Invention

According to one embodiment of the present invention, a molded interconnect device is disclosed that includes a substrate and a conductive element disposed on the substrate. The substrate comprises a polymer composition comprising a polymer matrix comprising a thermotropic liquid crystalline polymer and about 10 to about 80 parts by weight of mineral filler per 100 parts by weight of the polymer matrix. The mineral filler has an average diameter of about 25 microns or less. The polymer composition comprises copper in an amount of about 1,000ppm or less and chromium in an amount of about 2,000ppm or less, and also exhibits about 1 x 10 as determined according to IEC 62631-3-1:2016 ¹⁴ Ohmic or greater surface resistivity.

Other features and aspects of the present invention are set forth in more detail below.

Drawings

A full and enabling disclosure of the present invention, including the best mode thereof to one of ordinary skill in the art, is set forth more particularly in the remainder of the specification, including reference to the accompanying figures wherein:

FIG. 1 is a flow chart of one embodiment of a manufacturing process that may be used to form an electronic device;

FIG. 2 is a perspective view of the fabrication process shown in FIG. 1, showing the substrate on the carrier at various stages during formation of the electronic device;

Fig. 3 is a perspective view of the electronic device shown in fig. 2, separated from the carrier;

FIG. 4 is a perspective view of one embodiment of a roll-to-roll carrier that may be used in the manufacturing process shown in FIG. 1;

FIG. 5 is a schematic diagram of one embodiment of forming conductive elements on a substrate;

FIG. 6 is a flow chart illustrating additional steps that may be used in the manufacturing process of FIG. 1;

FIG. 7 is a perspective view of one embodiment of an electronic device in the form of an automotive lamp; and

fig. 8 is an exploded perspective view of the electronic device shown in fig. 7.

Detailed Description

It is to be understood by one of ordinary skill in the art that the present discussion is a description of exemplary embodiments only, and is not intended as limiting the broader aspects of the present invention.

In general, the present invention is directed to a molded interconnect device that includes a substrate and a conductive element disposed on the substrate. The substrate comprises a polymer composition comprising a mineral filler and a polymer matrix comprising a thermotropic liquid crystalline polymer. By selectively controlling the specific properties of these and other components of the polymer composition, as well as their relative concentrations, the inventors have discovered that the resulting composition can be easily plated without the use of conventional laser direct structuring systems. For example, the size of the mineral filler may be small enough so that it does not substantially interfere with the techniques used to form the interconnect pattern on the substrate (e.g., laser ablation). More specifically, the mineral filler may have a median diameter of about 25 microns or less, in some embodiments from about 0.1 microns to about 15 microns, in some embodiments from about 0.5 microns to about 14 microns, and in some embodiments, from about 1 micron to about 13 microns, as determined by a laser diffraction analyzer (e.g., microtrac S3500). In addition to not interfering with the formation of the interconnection pattern, it is believed that mineral fillers having the dimensional characteristics described above can also move more easily in the molding apparatus, which enhances distribution within the polymer matrix and minimizes the creation of surface defects.

Since the substrate can be plated without the use of a laser direct structuring system, the polymer composition advantageously can be used without the use of copper chromite (CuCr ₂ O ₄ ) As laser activated additives. In this regard, the resulting polymer composition may generally beDoes not contain chromium and/or copper. For example, chromium may be present in the composition in an amount of about 2,000 parts per million ("ppm") or less, in some embodiments about 1,500ppm or less, in some embodiments about 1,000ppm or less, and in some embodiments, about 0.001ppm to about 500ppm; while copper is typically present in the composition in an amount of about 1,000ppm or less, in some embodiments about 750ppm or less, in some embodiments about 500ppm or less, and in some embodiments, from about 0.001ppm to about 100ppm. The copper and chromium content may be determined using known techniques, for example, by X-ray fluoroscopy (e.g., innov-X Systems Model a-2000X-ray fluorescence spectrometer with Si-Pin diode detector). Of course, the polymer composition may also be generally free of other types of conventional laser-activated additives other than copper chromite, such as those of formula AB ₂ O ₄ Wherein a is a metal cation of valence 2 (e.g., cadmium, chromium, manganese, nickel, zinc, copper, cobalt, iron, magnesium, tin, or titanium) and B is a metal cation of valence 3 (e.g., chromium, iron, aluminum, nickel, manganese, or tin) (e.g., mgAl ₂ O ₄ 、ZnAl ₂ O ₄ 、FeAl ₂ O ₄ 、CuFe ₂ O ₄ 、MnFe ₂ O ₄ 、NiFe ₂ O ₄ 、TiFe ₂ O ₄ 、FeCr ₂ O ₄ Or MgCr ₂ O ₄ ). The polymer composition may be free of such spinel crystals (i.e., 0 wt.%) or such crystals may be present only in small concentrations, such as in an amount of about 1wt.% or less, in some embodiments about 0.5wt.% or less, and in some embodiments, from about 0.001wt.% to about 0.2wt.%.

The polymer composition may also exhibit a relatively high degree of electrical resistance to help provide good insulating properties to the substrate for use in molding interconnect devices. For example, the surface resistivity may be about 1×10 ¹⁴ Ohm or greater, in some embodiments about 1 x 10 ¹⁵ Ohm or greater, in some embodiments about 1 x 10 ¹⁶ Ohm or greater, and in some embodiments about 1 x 10 ¹⁷ Ohm or greater as determined according to IEC 62631-3-1:2016 at a temperature of about 20 ℃. The volume resistivity can likewise be about 1X 10 ¹² Ohm-meters or greater, in some embodiments about 1 x 10 ¹³ Ohm-meters or greater, in some embodiments about 1 x 10 ¹⁴ Ohm-meters or greater, and in some embodiments about 1 x 10 ¹⁵ Ohm-meters or greater as determined according to IEC 62631-3-1:2016 at a temperature of about 20 ℃. To help achieve these values, it is generally desirable that the composition is generally free of conventional materials having a high degree of conductivity. For example, the polymer composition may generally be free of intrinsic volume resistivity (intrinsic volume resistivity) of less than about 1 ohm-cm, in some embodiments less than about 0.1 ohm-cm, and in some embodiments about 1 x 10 ^-8 Up to about 1X 10 ^-2 Ohm-cm of conductive filler, as measured at a temperature of about 20 ℃. Examples of such conductive fillers may include, for example: conductive carbon materials such as graphite, conductive carbon black, carbon fibers, graphene, carbon nanotubes, and the like; metals (e.g., metal particles, metal flakes, metal fibers, etc.); an ionic liquid; etc. While it is generally desirable to minimize the presence of such conductive materials, in certain embodiments they may be present in relatively small percentages, for example, in an amount of about 5wt.% or less, in some embodiments about 2wt.% or less, in some embodiments about 1wt.% or less, in some embodiments about 0.5wt.% or less, and in some embodiments about 0.001wt.% to about 0.2wt.% of the polymer composition.

Various embodiments of the present invention will now be described in more detail.

I.Polymer composition

A.Polymer matrix

The polymer matrix typically includes one or more liquid crystalline polymers in an amount typically from about 30wt.% to about 90wt.%, in some embodiments from about 30wt.% to about 80wt.%, in some embodiments from about 40wt.% to about 75wt.%, and in some embodiments, from about 50wt.% to about 70wt.% of the polymer composition. Liquid crystalline polymers are generally classified as "thermotropic" in the sense that they can possess rod-like structures and exhibit crystalline behavior in their molten state (e.g., thermotropic nematic state). The polymer has a relatively high melting temperature, such as about 280 ℃ or greater, in some embodiments about 280 ℃ to about 400 ℃, in some embodiments about 290 ℃ to about 390 ℃, and in some embodiments about 300 ℃ to about 380 ℃. Such polymers may be formed from one or more types of repeating units known in the art. For example, the liquid crystalline polymer may comprise one or more aromatic ester repeating units generally represented by the following formula (I):

wherein, the liquid crystal display device comprises a liquid crystal display device,

ring B is a substituted or unsubstituted 6 membered aryl group (e.g., 1, 4-phenylene or 1, 3-phenylene), a substituted or unsubstituted 6 membered aryl group fused to a substituted or unsubstituted 5-or 6-membered aryl group (e.g., 2, 6-naphthalene), or a substituted or unsubstituted 6-membered aryl group bonded to a substituted or unsubstituted 5-or 6-membered aryl group (e.g., 4-biphenylene); and

Y ₁ And Y ₂ Independently O, C (O), NH, C (O) HN or NHC (O).

Generally, Y ₁ And Y ₂ At least one of which is C (O). Examples of such aromatic ester repeating units may include, for example, aromatic dicarboxylic repeating units (Y in formula I ₁ And Y ₂ C (O)), aromatic hydroxycarboxylic acid repeat units (Y in formula I ₁ Is O and Y ₂ C (O)) =), and various combinations thereof.

For example, aromatic hydroxycarboxylic acid repeat units derived from aromatic hydroxycarboxylic acids (e.g., 4-hydroxybenzoic acid; 4-hydroxy-4 '-biphenylcarboxylic acid; 2-hydroxy-6-naphthoic acid; 2-hydroxy-5-naphthoic acid; 3-hydroxy-2-naphthoic acid; 2-hydroxy-3-naphthoic acid; 4' -hydroxyphenyl-4-benzoic acid; 3 '-hydroxyphenyl-4-benzoic acid; 4' -hydroxyphenyl-3-benzoic acid, and the like, as well as alkyl, alkoxy, aryl, and halogen substituents thereof, and combinations thereof) may be used. Particularly suitable aromatic hydroxycarboxylic acids are 4-hydroxybenzoic acid ("HBA") and 6-hydroxy-2-naphthoic acid ("HNA"). When used, the repeat units derived from the hydroxycarboxylic acid (e.g., HBA and/or HNA) generally constitute about 40mol.% or more, in some embodiments about 45mol.% or more, and in some embodiments, about 50mol.% to 100mol.% of the polymer. In one embodiment, for example, the repeat units derived from HBA may constitute from about 30 to about 90 mole percent of the polymer, in some embodiments from about 40 to about 85 mole percent of the polymer, and in some embodiments, from about 50 to about 80 mole percent of the polymer. The repeating units derived from HNA may likewise constitute from about 1 to about 30 mole percent of the polymer, in some embodiments from about 2 to about 25 mole percent of the polymer, and in some embodiments, from about 3 to about 15 mole percent of the polymer.

Aromatic dicarboxylic repeating units derived from aromatic dicarboxylic acids (e.g., terephthalic acid, isophthalic acid, 2, 6-naphthalene dicarboxylic acid, diphenyl ether-4, 4 '-dicarboxylic acid, 1, 6-naphthalene dicarboxylic acid, 2, 7-naphthalene dicarboxylic acid, 4' -dicarboxybiphenyl, bis (4-carboxyphenyl) ether, bis (4-carboxyphenyl) butane, bis (4-carboxyphenyl) ethane, bis (3-carboxyphenyl) ether, bis (3-carboxyphenyl)) ethane, and the like, as well as alkyl, alkoxy, aryl, and halogen substituents thereof, and combinations thereof, may also be used. Particularly suitable aromatic dicarboxylic acids may include, for example, terephthalic acid ("TA"), isophthalic acid ("IA"), and 2, 6-naphthalene dicarboxylic acid ("NDA"). When used, the repeating units derived from the aromatic dicarboxylic acid (e.g., IA, TA, and/or NDA) generally constitute from about 1 to about 50, in some embodiments from about 2 to about 40, and in some embodiments, from about 5 to about 30, mole percent of the polymer.

Other repeat units may also be used in the polymer. In certain embodiments, for example, repeat units derived from aromatic diols (e.g., hydroquinone, resorcinol, 2, 6-dihydroxynaphthalene, 2, 7-dihydroxynaphthalene, 1, 6-dihydroxynaphthalene, 4' -dihydroxybiphenyl (or 4,4' -biphenol), 3' -dihydroxybiphenyl, 3,4' -dihydroxybiphenyl, 4' -dihydroxybiphenyl ether, bis (4-hydroxyphenyl) ethane, and the like, as well as alkyl, alkoxy, aryl, and halogen substituents thereof, and combinations thereof) may be used. Particularly suitable aromatic diols may include, for example, hydroquinone ("HQ") and 4,4' -biphenol ("BP"). When used, the repeating units derived from an aromatic diol (e.g., HQ and/or BP) generally constitute from about 1 to about 30, in some embodiments from about 2 to about 25, and in some embodiments, from about 5 to about 20, mole percent of the polymer. Repeat units derived from, for example, aromatic amides (e.g., acetaminophen ("APAP")) and/or aromatic amines (e.g., 4-aminophenol ("AP"), 3-aminophenol, 1, 4-phenylenediamines, those of 1, 3-phenylenediamines, etc.) may also be used. When used, the repeat units derived from an aromatic amide (e.g., APAP) and/or an aromatic amine (e.g., AP) generally constitute from about 0.1 to about 20 mole percent, in some embodiments from about 0.5 to about 15 mole percent, and in some embodiments, from about 1 to about 10 mole percent of the polymer. It should also be understood that various other monomeric repeat units may be incorporated into the polymer. For example, in certain embodiments, the polymer may contain one or more repeat units derived from non-aromatic monomers (e.g., aliphatic or cycloaliphatic hydroxycarboxylic acids, dicarboxylic acids, diols, amides, amines, etc.). Of course, in other embodiments, the polymer may be "wholly aromatic" in that it has no repeating units derived from non-aromatic (e.g., aliphatic or alicyclic) monomers.

Although not required, the liquid crystal polymer may be a "low-naphthene" polymer in the sense that it contains relatively low levels of repeating units derived from naphthenic hydroxycarboxylic acids and naphthenic dicarboxylic acids (such as naphthalene-2, 6-dicarboxylic acid ("NDA"), 6-hydroxy-2-naphthoic acid ("HNA"), or combinations thereof). That is, the total amount of repeating units derived from the cycloalkane hydroxycarboxylic acid and/or cycloalkane dicarboxylic acid (e.g., NDA, HNA, or a combination of HNA and NDA) generally comprises about 15mol.% or less, in some embodiments about 10mol.% or less, and in some embodiments, about 1mol.% to about 8mol.% of the polymer.

B.Mineral filler

As mentioned above, the polymer composition also contains one or more mineral fillers distributed in the polymer matrix. Such mineral fillers generally comprise from about 10 parts to about 80 parts, in some embodiments from about 20 parts to about 70 parts, and in some embodiments, from about 30 parts to about 60 parts per 100 parts by weight of the polymer matrix. The mineral filler may, for example, constitute from about 5wt.% to about 70wt.%, in some embodiments from about 10wt.% to about 60wt.%, in some embodiments from about 10wt.% to about 55wt.%, and in some embodiments, from about 25wt.% to about 40wt.% of the polymer composition.

The nature of the mineral filler used in the polymer composition may vary, such as mineral particles, mineral fibers (or "whiskers"), and the like, as well as blends thereof. Suitable mineral fibers may include, for example, those derived from silicates such as island silicates (neosilicates), sorosilicates (sorosilicates), chain silicates (inosilicates) (e.g., calcium chain silicates such as wollastonite; calcium magnesium chain silicates such as tremolite; calcium magnesium iron chain silicates such as actinolite; magnesium iron chain silicates such as tremolite; and the like), layered silicates (phyllosilicates) (e.g., layered aluminum silicates such as palygorskite), reticulosilicates (tectosilicate), and the like; sulfates, such as calcium sulfate (e.g., dehydrated or anhydrite); mineral wool (e.g., rock wool or slag wool); etc. Particularly suitable are chain silicates (e.g. calcium silicate chain or CaSiO ₃ ) For example, available under the trade name from Nyco Minerals

(e.g.)>

4W or->

8) Wollastonite fiber was obtained. Such wollastonite fibers may contain, for example, about 50% CaO and about 50% SiO ₂ And various other trace components, such as Fe ₂ O ₃ 、Al ₂ O ₃ 、MnO、MgO、TiO ₂ And K ₂ O. As noted, mineral fibers generally have a small size, such as a median diameter of about 25 microns or less, in some embodiments from about 0.1 microns to about 15 microns, in some embodiments from about 0.5 microns to about 14 microns, and in some embodiments, from about 1 micron to about 13 microns, as determined, for example, by a laser diffraction analyzer (e.g., microtrac S3500). Mineral fibers may also have a narrow size distribution. That is, at least about 60% by volume of the fibers, in some embodiments at least about 70% by volume of the fibers, and in some embodiments at least about 80% by volume of the fibers may have a size within the ranges described above. In addition to having a small median diameter as described above, mineral fibers may also have a relatively high aspect ratio (median length divided by median diameter) to help further improve the properties of the resulting polymer composition. For example, the mineral fibers may have an aspect ratio of from about 1.1 to about 100, in some embodiments from about 2 to about 50, in some embodiments from about 4 to about 30, and in some embodiments, from about 8 to about 20. The median length of such mineral fibers may, for example, be in the range of about 1 micron to about 300 microns, in some embodiments about 5 microns to about 250 microns, in some embodiments about 40 microns to about 220 microns, and in some embodiments about 60 microns to about 200 microns, as determined by a laser diffraction analyzer (e.g., microtrac S3500).

Other suitable mineral fillers are mineral particles. As described above, the median diameter of the mineral particles may be about 25 microns or less, in some embodiments from about 0.1 microns to about 15 microns, in some embodiments from about 0.5 microns to about 14 microns, and in some embodiments, from about 1 micron to about 13 microns, as determined, for example, by a laser diffraction analyzer (e.g., microtrac S3500). The shape of the particles may be varied as desired, e.g., granular, tablet, etc. For example, the platelet particles used may have a relatively high aspect ratio (e.g., average diameter divided by average thickness), such as about 4 or greater, in some embodiments about 8 or greater, and in one embodimentIn some embodiments from about 10 to about 500. The average thickness of such platelet particles may likewise be about 2 microns or less, in some embodiments from about 5 nanometers to about 1 micron, and in some embodiments, from about 20 nanometers to about 500 nanometers. Regardless of their shape and size, the particles are typically formed from natural and/or synthetic silica or silicate minerals (e.g., talc, mica, halloysite, kaolinite, illite, montmorillonite, vermiculite, palygorskite, pyrophyllite, calcium silicate, aluminum silicate, wollastonite, silica, etc.). Talc, mica and silica are particularly suitable. Generally any form of mica may be used, including for example muscovite (KAl) ₂ (AlSi ₃ )O ₁₀ (OH) ₂ ) Biotite (K (Mg, fe) ₃ (AlSi ₃ )O ₁₀ (OH) ₂ ) Phlogopite (KMg) ₃ (AlSi ₃ )O ₁₀ (OH) ₂ ) Lepidolite (K (Li, al) _2-3 (AlSi ₃ )O ₁₀ (OH) ₂ ) Glauconite (K, na) (Al, mg, fe) ₂ (Si,Al) ₄ O ₁₀ (OH) ₂ ) Etc. Muscovite-based mica is particularly suitable for use in polymer compositions.

By selectively adjusting the type and relative amounts of mineral filler, the inventors have discovered that not only can the polymer composition be plated, but also the thermal conductivity can be increased without significantly affecting other properties of the polymer composition. This, among other things, enables the composition to create a thermal path to transfer heat away from the resulting electronic device, thereby quickly eliminating "hot spots" and reducing the overall temperature during use. The composition may, for example, have an in-plane thermal conductivity of about 1W/m-K or greater, in some embodiments about 1.2W/m-K or greater, in some embodiments about 1.5W/m-K or greater, in some embodiments about 1.8W/m-K or greater, and in some embodiments, from about 2W/m-K to about 5W/m-K, as determined according to ASTM E1461-13. The composition may also exhibit a through plane thermal conductivity of about 0.2W/m-K or greater, in some embodiments about 0.3W/m-K or greater, in some embodiments about 0.4W/m-K or greater, and in some embodiments, about 0.5W/m-K to about 2W/m-K, as determined according to ASTM E1461-13. Notably, it has been found that such thermal conductivity can be achieved without the use of conventional materials having a high degree of intrinsic thermal conductivity (intrinsic thermal conductivity). For example, the polymer composition may generally be free of fillers having an intrinsic thermal conductivity of 50W/m-K or greater, in some embodiments 100W/m-K or greater, and in some embodiments 150W/m-K or greater. Examples of such high intrinsic thermal conductivity materials may include, for example, boron nitride, aluminum nitride, magnesium silicon nitride, graphite (e.g., expanded graphite), silicon carbide, carbon nanotubes, zinc oxide, magnesium oxide, beryllium oxide, zirconium oxide, yttrium oxide, aluminum powder, and copper powder. While it is generally desirable to minimize the presence of such high intrinsic thermal conductivity materials, in certain embodiments they may be present in relatively small percentages, for example, in an amount of about 5wt.% or less, in some embodiments about 2wt.% or less, in some embodiments about 1wt.% or less, in some embodiments about 0.5wt.% or less, and in some embodiments, about 0.001wt.% to about 0.2wt.% of the polymer composition.

C.Optional Components

Various additional additives may also be included in the polymer composition, such as glass fibers, impact modifiers, lubricants, pigments (e.g., carbon black), antioxidants, stabilizers, surfactants, waxes, flame retardants, anti-drip additives, nucleating agents (e.g., boron nitride), and other materials added to improve performance and processability. For example, the lubricant may be used in the polymer composition in an amount of about 0.05wt.% to about 1.5wt.%, and in some embodiments, about 0.1wt.% to about 0.5wt.% (by weight) of the polymer composition. Examples of such lubricants include fatty acid esters, salts, esters, fatty acid amides, organic phosphates, and hydrocarbon waxes (of the type commonly used as lubricants in engineering plastic material processing), including mixtures thereof. Suitable fatty acids typically have a backbone carbon chain of about 12 to about 60 carbon atoms, such as myristic acid, palmitic acid, stearic acid, arachidic acid, montanic acid, stearic acid (octadecylic acid), parietic acid (pariric acid), and the like. Suitable esters include fatty acid esters, fatty alcohol esters, wax esters, glycerol esters, glycol esters, and complex esters. Fatty acid amides include fatty primary amides, fatty secondary amides, methylene and ethylene bis amides, and alkanolamides such as palmitic acid amide, stearic acid amide, oleic acid amide, N' -ethylene bis stearamide, and the like. Also suitable are metal salts of fatty acids, such as calcium stearate, zinc stearate, magnesium stearate, and the like; hydrocarbon waxes, including paraffin waxes, polyolefin waxes, and oxidized polyolefin waxes, as well as microcrystalline waxes. Particularly suitable lubricants are acids, salts or amides of stearic acid, such as pentaerythritol tetrastearate, calcium stearate, or N, N' -ethylenebisstearamide.

The components of the polymer composition (e.g., one or more liquid crystal polymers, one or more mineral fillers, etc.) may be melt processed or blended together. The components may be fed, individually or in combination, to an extruder that includes at least one screw rotatably mounted and housed within a barrel (e.g., a cylindrical barrel) and may define a feed section and a melt section downstream of the feed section along the length of the screw. The extruder may be a single screw or twin screw extruder. The speed of the screw may be selected to achieve the desired residence time, shear rate, melt processing temperature, etc. For example, the screw speed may be in the range of about 50 to about 800 revolutions per minute ("rpm"), in some embodiments about 70rpm to about 150rpm, and in some embodiments, about 80rpm to about 120rpm. The apparent shear rate during melt blending may also be at about 100 seconds ^-1 To about 10,000 seconds ^-1 Within a range of about 500 seconds in some embodiments ^-1 Up to about 5000 seconds ^-1 And in some embodiments about 800 seconds ^-1 Up to about 1200 seconds ^-1 . Apparent shear rate equal to 4Q/pi R ³ Where Q is the volumetric flow rate of the polymer melt ("m) ³ S ") and R is the radius (" m ") of the capillary (e.g., extruder die) through which the molten polymer flows. Regardless of the particular manner in which the polymer composition is formed, the resulting polymer composition may have excellent thermal properties. For example, the melt viscosity of the polymer composition may be sufficiently low that it Can easily flow into the cavity of a mold having a small size. In one embodiment, the melt viscosity of the polymer composition may be from about 10Pa-s to about 250Pa-s, in some embodiments from about 15Pa-s to about 200Pa-s, in some embodiments from about 20Pa-s to about 150Pa-s, and in some embodiments, from about 30Pa-s to about 100Pa-s, such as at 1,000 seconds ^-1 Measured at the shear rate of (c). Melt viscosity can be measured according to ISO test No. 11443:2014 at a temperature 15 ℃ higher than the melting temperature of the composition (e.g., about 340 ℃ for a melting temperature of about 325 ℃).

II.Substrate and method for manufacturing the same

As described above, the polymer composition is used in a substrate on which the conductive elements are plated. The substrate may be formed using a variety of different molding techniques. Suitable techniques may include, for example, injection molding, low pressure injection molding, extrusion compression molding, gas injection molding, foam injection molding, low pressure gas injection molding, low pressure foam injection molding, gas extrusion compression molding, foam extrusion compression molding, extrusion molding, foam extrusion molding, compression molding, foam compression molding, gas compression molding, and the like. For example, an injection molding system may be used that includes a mold into which the polymer composition may be injected. The time within the syringe can be controlled and optimized so that the polymer matrix is not pre-cured. When the cycle time is reached and the barrel is full for venting, a piston may be used to inject the composition into the mold cavity. Compression molding systems may also be used. As with injection molding, shaping the polymer composition into the desired article also occurs within the mold. The composition may be placed in the compression mold using any known technique, such as picking by an automated robotic arm. The temperature of the mold may be maintained at or above the solidification temperature of the polymer matrix for a desired period of time to allow solidification to occur. The molded article may then be cured by subjecting the molded article to a temperature below the melting temperature. The product obtained can be demoulded. The cycle time of each molding process can be adjusted to accommodate the polymer matrix to achieve adequate bonding and to enhance overall process productivity.

The resulting polymer compositions may exhibit a variety of beneficial mechanical properties. For example, the composition may exhibit about 10kJ/m ² In some embodiments about 15kJ/m ² To about 60kJ/m ² And in some embodiments about 20kJ/m ² To about 50kJ/m ² Is measured at 23 ℃ according to ISO test No. 179-1:2010. The composition may also exhibit: a tensile strength of about 20MPa to about 500MPa, in some embodiments about 50MPa to about 400MPa, and in some embodiments, about 60MPa to about 350 MPa; about 0.5% or greater, in some embodiments about 0.8% to about 15%, and in some embodiments, about 1% to about 10% tensile strain-to-break; and/or a tensile modulus of about 5,000mpa to about 30,000mpa, in some embodiments about 7,000mpa to about 25,000mpa, and in some embodiments, about 10,000mpa to about 20,000 mpa. Tensile properties can be determined at 23℃according to ISO test number 527:2019. The composition may also exhibit: a flexural strength of about 40MPa to about 500MPa, in some embodiments about 50MPa to about 400MPa, and in some embodiments, about 100MPa to about 350 MPa; about 0.5% or greater, in some embodiments about 0.8% to about 15%, and in some embodiments, about 1% to about 10% of the bending fracture strain; and/or a flexural modulus of about 7,000mpa or greater, in some embodiments about 9,000mpa or greater, in some embodiments about 10,000mpa to about 30,000mpa, and in some embodiments, about 12,000mpa to about 25,000 mpa. Flexural properties can be determined at 23℃according to ISO test number 178:2019. The composition may also exhibit a Deflection Temperature Under Load (DTUL) of about 180 ℃ or greater, and in some embodiments about 190 ℃ to about 280 ℃, as measured according to ASTM D648-07 (technically equivalent to ISO test No. 75-2:2013) at a specified load of 1.8 MPa.

In some cases, the polymer composition may also have good electrical properties, particularly when it is desirable to use molded interconnect devices in antenna systems. For example, the polymer composition may exhibit a high dielectric constant of about 4 or greater, in some embodiments about 5 or greater, in some embodiments about 6 or greater, in some embodiments about 8 to about 30, in some embodiments about 10 to about 25, and in some embodiments about 12 to about 24, as determined by the post-split resonator method (split post resonator method) at a frequency of 2 GHz. Such high dielectric constants may facilitate the ability to form thin substrates and also allow the use of multiple conductive elements (e.g., antennas) that operate simultaneously with minimal levels of electrical interference. The dissipation factor, a measure of the rate of energy loss, may also be relatively low, such as about 0.3 or less, in some embodiments about 0.2 or less, in some embodiments about 0.1 or less, in some embodiments about 0.06 or less, in some embodiments about 0.04 or less, and in some embodiments about 0.001 to about 0.03 as measured by the post-splitting resonator method at a frequency of 2 GHz. Notably, the dielectric constant and dissipation factor can remain within the above ranges even when exposed to various temperatures (e.g., temperatures of about-30 ℃ to about 100 ℃). For example, the ratio of the dielectric constant after thermal cycling to the initial dielectric constant may be about 0.8 or greater, in some embodiments about 0.9 or greater, and in some embodiments, about 0.95 to about 1.1 when subjected to thermal cycling testing as described herein. Likewise, the ratio of the dissipation factor after exposure to high temperatures to the initial dissipation factor may be about 1.3 or less, in some embodiments about 1.2 or less, in some embodiments about 1.1 or less, in some embodiments about 1.0 or less, in some embodiments about 0.95 or less, in some embodiments about 0.1 to about 0.95, and in some embodiments about 0.2 to about 0.9. The change in dissipation factor (i.e., initial dissipation factor-dissipation factor after thermal cycling) may also be in the range of about-0.1 to about 0.1, in some embodiments about-0.05 to about 0.01, and in some embodiments, about-0.001 to 0.

III.Conductive element

One or more conductive elements can be deposited on the substrate using any of a variety of known metal deposition techniques (e.g., plating (e.g., electrolytic plating, electroless plating, etc.), printing (e.g., digital printing, aerosol jet printing, etc.), and so forth). The conductive element may comprise one or more of a variety of conductive materials, such as metals, e.g., gold, silver, nickel, aluminum, copper, and mixtures or alloys thereof. In one embodiment, for example, the conductive elements may include copper and/or nickel (e.g., pure or alloys thereof). If desired, a seed layer may first be formed on the substrate to facilitate the metal deposition process. When plating is used as the deposition technique, the process may be varied as desired. In some embodiments, for example, the process may include first forming a pattern on the surface of the substrate based on a desired circuit interconnect pattern. This can be accomplished using a variety of known techniques such as laser ablation or patterning, plasma etching, ultraviolet light treatment, acid etching, etc.

In any event, after the desired pattern is formed on the substrate, the patterned areas may optionally be subjected to an activation process in preparation for subsequent metal deposition. In this process, the patterned substrate may be contacted with an activation solution comprising a metal, such as palladium, platinum, iridium, rhodium, and the like, and mixtures thereof. Palladium is particularly suitable. Once the surface has been conditioned as described above, a first metal layer may then be formed on the surface of the patterned substrate, for example by electroless plating and/or electrolytic plating. Electroless plating may be performed by an autocatalytic reaction in which the metal deposited on the surface acts as a catalyst for further deposition. Typically, nickel and/or copper is electroless plated onto the surface of the patterned substrate. Electroless nickel plating may be accomplished, for example, using a solution comprising a nickel salt (e.g., nickel sulfate). Electrolytic plating may also be employed, during which the patterned substrate is contacted with a metal solution and subjected to an electrical current to initiate deposition of the metal. The patterned substrate may also be subjected to one or more additional steps to form the final metal coating(s), if desired. For example, a second metal layer may be electrodeposited on the first metal layer (e.g., electrolytic and/or electroless copper and/or nickel plating). The second metal layer may comprise copper or nickel, for example. In certain embodiments, one or more additional metal layer(s), such as copper and/or nickel, may also be electrodeposited on the second metal layer.

Referring to fig. 1, 4 and 5, one embodiment of a process for forming a molded interconnect device having a substrate and conductive elements is shown in more detail. As shown in step 1 of fig. 1, a carrier 40 is provided that includes an outer region from which arms 56 extend to form a leadframe 54. As shown in fig. 4, the carrier 40 may be unwound, for example, from a bulk source reel 68a and then collected in a second reel 68 b. Carrier 40 is typically formed of a metal (e.g., copper or copper alloy) or other suitable conductive material. The arm 56 may also have an aperture 58 disposed therein, if desired. The carrier holes 52 may also be located in an outer portion of the carrier 40 to allow it to traverse along the production line in a continuous manner. In step 2 of fig. 1, substrate 42 may be subsequently molded (e.g., overmolded) onto leadframe 54, and substrate 42 may be formed from the polymer composition of the present invention. An aperture 60 may be provided in base 42 that corresponds to aperture 58 in finger 56.

Once the substrate 42 is molded over the lead frame 54, conductive elements (circuit traces) may then be formed. Such conductive elements may be formed by a variety of known metal deposition techniques, such as plating (e.g., electrolytic plating, electroless plating, etc.), printing (e.g., digital printing, aerosol jet printing, etc.), and the like. If desired, a seed layer may be first formed on the substrate to facilitate the metal deposition process. For example, in step 3 and step 3A of fig. 1, a seed layer 44 may first be deposited on the surface of the substrate 42, which allows the internal bus bars 43 formed by the carrier 40 to be electrically connected to the seed layer 44. The seed layer 44 may then be deposited with a metal (e.g., copper, nickel, gold, silver, tin, lead, palladium, etc.) to form the part 46 containing the conductive element 62 (step 4). For example, in one embodiment, electroplating may be performed by applying a voltage potential to the carrier 40 and then placing it in an electrolytic plating bath. Alternatively, vias may also be molded into the surface of the substrate to establish electrical pathways between the conductive elements (traces) and the internal layers of the circuit. These conductive elements form "wire bars" for the carrier part, which enables plating of the deposited conductive paste after it has been applied. If desired, the surface of the substrate may be roughened prior to plating using a variety of known techniques, such as laser ablation, plasma etching, ultraviolet light treatment, fluorination, and the like. Furthermore, such roughening facilitates plating in the desired interconnect pattern. For example, referring to fig. 5, one embodiment of a process using a laser for this purpose is shown in more detail. More specifically, as shown in step 9 of fig. 5, a laser 70 may first be used to ablate the surface of the substrate 42 to create a channel 72 that forms the interconnect pattern 66. In step 10 of fig. 5, the conductive paste 74 may then be disposed within the channels 72 by any known technique (e.g., by an inkjet process, an aerosol process, or a screen printing process). Alternatively, instead of using a slurry and/or in addition to using a slurry, a plating process (e.g., electroless plating) may also be used. However, when used, the deposited slurry 74 may optionally be sintered by a laser or rapid heating 76 as illustrated in step 11 of fig. 5 to help ensure adequate adhesion of the slurry 74 to the substrate 42. Once optionally sintered, the paste 74 is plated (e.g., electrolytically plated) with metal to form the conductive elements 62 (electronic circuit traces) as shown in step 12 of fig. 5.

IV.Electronic component

The molded interconnect device of the present invention may be used in a variety of electronic components such as printed circuit boards, flexible circuits, connectors, thermal management features (thermal management feature), EMI shielding, high current conductors, RFID devices, antennas, wireless power supplies, sensors, MEMS devices, LED devices, microprocessors, memory devices, ASICs, passive devices, impedance control devices, electromechanical devices, sensors, or combinations thereof. In some embodiments, the substrate of the electronic component may be molded onto a "singulated carrier portion", which generally means that the carrier portion has been separated from a larger carrier (e.g., joined or continuous).

For example, referring again to fig. 1, the electronic component may be formed by connecting one or more additional portions 50 to substrate 42 (step 6) using any of a variety of techniques (e.g., soldering, wire bonding, etc.). In some embodiments, a solder mask 48 may optionally be applied (step 5) prior to connecting portions 50. The resulting electronic component may then be separated from carrier 40. For example, fig. 2-3 illustrate one embodiment of the electronic component 22 during various stages of its formation. For example, in step a, carrier 40 is shown prior to molding. Step B shows the substrate 42 after having been molded onto the carrier portion 40 and the conductive elements 62 applied. In steps C and D, optional pin contacts and circuit metallization may be added to form a complete electronic device (step E). The completed electronic component 22 may then be separated from the adjoining carrier 40, as shown in fig. 3, to form an electronic component 22 comprising singulated carrier portions 40. The resulting electronic component contains various types of electronic parts, such as housings for light sources (e.g., light emitting diodes ("LEDs")) of lamps (tunnel lights, etc.) or other electronic devices (e.g., for computers, telephones, electronic control units, etc.). Such products may be particularly suitable for use with vehicles (e.g., automobiles, buses, motorcycles, boats, etc.), such as Electric Vehicles (EVs), hybrid Electric Vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), or other types of vehicles that use electric propulsion (collectively, "electric vehicles").

For example, referring to fig. 7-8, one embodiment of an electronic component in the form of a lamp 20 for an automotive product is shown. The lamp 20 includes a housing 24, electronics 22 (see also fig. 2), and a lamp tube 28. The housing 24 may be formed in two

parts

24a and 24b as shown in fig. 8. The housing 24 has a wall 32 defining a passageway 34 therethrough and an aperture 36 extending through the wall 32 and communicating with the passageway 34. The opening 36 may be transverse to the channel 34. The electronic component 22 may be mounted within the channel 34 of the housing 30. The light tube 28 extends through an aperture 36 in the housing 30 and is mounted over a Light Emitting Diode (LED) 38 formed as one or more portions 50 of the electronic component 22 as described herein. Fig. 6 provides a representative process for forming lamp 20. For example, steps 7 and 8 show that the electronic component 22 is singulated from other devices and assembled with the housing 24 and the light tube 28. After the component 22 is formed, it is installed within the channel 34 and assembled with the

portions

24a and 24b of the housing 24. The pin contacts 64 remain exposed. The tube 28 is mounted in the housing 24 through an aperture 36 and is disposed over an LED or LEDs 38.

Electronic components may also be used in a variety of other types of devices, such as desktop computers, portable computers, hand-held electronic devices, automotive devices, and the like. In one suitable configuration, the electronic component is formed in a relatively compact housing of the portable electronic component, with relatively little internal space available in the housing. Examples of suitable portable electronic components include cellular telephones, laptop computers, small portable computers (e.g., ultra-portable computers, netbook computers, and tablet computers), wristwatch devices, suspension devices, headphones and earpiece devices, media players with wireless communication capabilities, palm top computers (sometimes also referred to as personal digital assistants), remote controls, global Positioning System (GPS) devices, palm game devices, and the like. The electronic components may also be integrated with other components (e.g., a camera module, speaker, or battery cover of the handheld device).

The invention will be better understood with reference to the following examples.

Test method

Melt viscosity: melt viscosity (Pa-s) may be at 1,000s according to ISO test number 11443:2021 ^-1 Is measured using a Dynasco LCR7001 capillary rheometer at a temperature 15℃above the melting temperature. The rheometer orifice (die) had a diameter of 1mm, a length of 20mm, an aspect ratio (L/D) of 20.1, and an entrance angle of 180 °. The diameter of the barrel was 9.55mm+0.005mm and the length of the rod was 233.4mm.

Melting temperature: the melting temperature ("Tm") may be determined by differential scanning calorimetry ("DSC") as known in the art. The melting temperature is the Differential Scanning Calorimetry (DSC) peak melting temperature as determined according to ISO test number 11357-2:2020. Under the DSC procedure, samples were heated and cooled at 20 ℃/min using DSC measurements performed on a TAQ2000 instrument, as set forth in ISO standard 10350.

Deflection temperature under load ("DTUL"): the deflection temperature under load can be determined according to ISO test number 75-2:2013 (technically equivalent to ASTM D648). More specifically, a test strip sample having a length of 80mm, a thickness of 10mm, and a width of 4mm may be subjected to a three point bending test along the edge, with a specified load (maximum external fiber stress) of 1.8 megapascals. The sample may be lowered into a silicone oil bath with the temperature rising at 2 c/min until the sample flexes 0.25mm (0.32 mm for ISO test No. 75-2:2013).

Tensile modulus, tensile stress, and tensile elongation: tensile properties may be tested according to ISO test number 527:2019 (technically equivalent to ASTM D638). Modulus and strength measurements can be made on the same test strip sample of 80mm length, 10mm thickness and 4mm width. The test temperature may be 23℃and the test speed may be 1mm/min or 5mm/min.

Flexural modulus, flexural stress and flexural elongation: bending properties can be tested according to ISO test No. 178:2019 (technically equivalent to ASTM D790). The test can be performed over a support span of 64 mm. The test may be performed on the center portion of an uncut ISO 3167 utility pole. The test temperature may be 23℃and the test speed may be 2mm/min.

Notched and notched Charpy impact Strength: charpy performance may be tested according to ISO test number ISO 179-1:2010 (technically equivalent to ASTM D256-10, method B). The test can be performed using a type 1 sample size (80 mm in length, 10mm in width, and 4mm in thickness). When testing notch impact strength, the notch may be a type a notch (0.25 mm base radius). A single tooth milling machine may be used to cut the sample from the center of the utility pole. The test temperature may be 23 ℃.

Dielectric constant ("Dk") and dissipation factor ("Df"): the dielectric constant (or relative static permittivity) and dissipation factor are determined using known post-splitting dielectric resonator techniques, such as those described in Baker-Jarvis et al, IEEE Trans. On Dielectric and Electrical Insulation,5 (4), p.571 (1998) and Krupka et al, proc.7 ^th International Conference on Dielectric Materials:Measurements and Applications,IEEEConference Publication No.430 (month 9 1996). More specifically, a plate sample of dimensions 80mm x 90mm x 3mm was inserted between two fixed dielectric resonators. The resonator measures the permittivity component in the plane of the sample. Five (5) samples were tested and the average value recorded. Post-splitting resonators may be used for dielectric measurements in the low gigahertz range (e.g., from 2GHz to 1 GHz). To test these properties after thermal cycling, the sample may be placed in a temperature controlled chamber and heated and cooled in a temperature range of-30 ℃ to 100 ℃. First, the sample was heated until a temperature of 100 ℃ was reached, and immediately cooled after the temperature was reached. When the temperature reached-30 ℃, the sample was immediately reheated until 100 ℃. Twenty three (23) heating and cooling cycles can be performed over a period of 3 hours.

Surface/volume resistivity: the surface resistivity values and volume resistivity values are typically determined according to IEC 62631-3-1:2016 or ASTM D257-14. According to this procedure, a standard sample (e.g., 1 cubic meter) is placed between two electrodes. A voltage of sixty (60) seconds was applied and the resistance was measured. The surface resistivity is the quotient of the potential gradient (in V/m) and the current per unit electrode length (in a/m), and generally represents the resistance of the leakage current along the surface of the insulating material. Because the four (4) ends of the electrodes define a square, the lengths in the quotient cancel, and the surface resistivity is reported in ohms, although more descriptive units of ohms/square are typically seen. Volume resistivity is also determined as the ratio of the potential gradient parallel to the current in the material to the current density. In SI units, the volume resistivity is numerically equal to the direct current resistance (ohm-meters) between opposite faces of a cubic meter of material.

Examples

A sample is formed for a substrate of a molded interconnect device as described herein. The sample comprises a liquid crystalline polymer ("LCP 1"), nyglos ^TM 8 (wollastonite fiber, median diameter of 12 μm, aspect ratio of 13:1, median length of 156 μm), carbon black pigment and Glycube ^TM P. LCP 1 consisted of 60mol.% HBA, 5mol.% HNA, 12mol.% BP, 17.5mol.% TA, and 5mol.% APAP is formed. Compounding was performed using an 18mm single screw extruder. The samples were injection molded into plaques (60 mm. Times.60 mm).

TABLE 1

The resulting samples were tested for thermal and mechanical properties. The results are shown in Table 2 below.

TABLE 2

	Sample Properties
		In-plane thermal conductivity (W/m-K)	2.5
Thermal conductivity of through plane (W/m-K)	0.6
		Surface resistivity (ohm)	1.9×10 ¹⁷
Volume resistivity (ohm-m)	3.7×10 ¹⁴
		Notched Charpy (kJ/m) ² )	10
Non-notched Charpy v (kJ/m) ² )	29
		Tensile Strength (MPa)	143
Tensile modulus (MPa)	14,000
		Tensile elongation (%)	2.7
Flexural Strength (MPa)	160
		Flexural modulus (MPa)	13,000
Melting temperature (. Degree. C., first heating by DSC)	330
		DTUL(1.8MPa，℃)	240

These and other modifications and variations to the present invention may be practiced by those of ordinary skill in the art, without departing from the spirit and scope of the present invention. Further, it should be understood that aspects of the various embodiments may be interchanged both in whole or in part. Furthermore, those of ordinary skill in the art will appreciate that the foregoing description is by way of example only, and is not intended to limit the invention so further described in such appended claims.

Claims

1. A molded interconnect device comprising:

a substrate comprising a polymer composition comprising a polymer matrix comprising a thermotropic liquid crystalline polymer and about 10 parts by weight to about 80 parts by weight of a mineral filler per 100 parts by weight of the polymer matrix, wherein the mineral filler has an average diameter of about 25 microns or less, wherein the polymer composition comprises copper in an amount of about 1,000ppm or less and chromium in an amount of about 2,000ppm or less, and further wherein the polymer composition exhibits about 1 x 10 as determined according to IEC62631-3-1:2016 ¹⁴ Ohmic or greater surface resistivity; and

a conductive element disposed on the substrate.

2. The molded interconnect device of claim 1, wherein the polymer composition is free of a polymer having the formula AB ₂ O ₄ Wherein a is a metal cation of valence 2 and B is a metal cation of valence 3.

3. The molded interconnect device of claim 1, wherein the polymer composition is free of copper chromite.

4. The molded interconnect device of claim 1, wherein the polymer composition exhibits about 1 x 10 as determined according to IEC62631-3-1:2016 ¹² Volume resistivity in ohm-meters or greater.

5. The molded interconnect device of claim 1, wherein the polymer composition exhibits about 1 x 10 as determined according to IEC62631-3-1:2016 ¹⁶ Ohmic or greater surface resistivity.

6. The molded interconnect device of claim 1, wherein the polymer composition is free of conductive fillers having an intrinsic volume resistivity of less than about 0.1 ohm-cm.

7. The molded interconnect device of claim 1, wherein the polymer composition is free of conductive carbon material.

8. The molded interconnect device of claim 1, wherein the polymer matrix comprises from about 30wt.% to about 80wt.% of the polymer composition.

9. The molded interconnect device of claim 1, wherein the liquid crystal polymer has a melting temperature of about 280 ℃ or greater.

10. The molded interconnect device of claim 1, wherein the liquid crystalline polymer comprises one or more repeating units derived from an aromatic hydroxycarboxylic acid, wherein the repeating units of the hydroxycarboxylic acid constitute about 40mol.% or more of the polymer.

11. The molded interconnect device of claim 10, wherein the liquid crystal polymer comprises repeating units derived from 4-hydroxybenzoic acid, 6-hydroxy-2-naphthoic acid, or combinations thereof.

12. The molded interconnect device of claim 11, wherein the liquid crystalline polymer comprises repeat units derived from 4-hydroxybenzoic acid in an amount of about 30 to about 90 mole percent of the polymer, and comprises repeat units derived from 6-hydroxy-2-naphthoic acid in an amount of about 1 to about 30 mole percent of the polymer.

13. The molded interconnect device of claim 10, wherein the liquid crystal polymer further comprises repeat units derived from terephthalic acid, isophthalic acid, 2, 6-naphthalene dicarboxylic acid, hydroquinone, 4' -biphenol, acetaminophen, 4-aminophenol, or combinations thereof.

14. The molded interconnect device of claim 1, wherein the polymer composition exhibits an in-plane thermal conductivity of about 1W/m-K or greater as determined according to ASTM E1461-13 and/or a through-plane thermal conductivity of about 0.2W/m-K or greater as determined according to ASTM E1461-13.

15. The molded interconnect device of claim 1, wherein the mineral filler comprises mineral particles.

16. The molded interconnect device of claim 14, wherein the mineral particles comprise talc, mica, silica, or a combination thereof.

17. The molded interconnect device of claim 1, wherein the mineral filler comprises mineral fibers.

18. The molded interconnect device of claim 17, wherein the mineral fiber comprises wollastonite.

19. The molded interconnect device of claim 17, wherein the mineral fibers have a median length of about 40 microns to about 220 microns.

20. The molded interconnect device of claim 17, wherein the mineral fibers have an aspect ratio of about 2 to about 50.

21. The molded interconnect device of claim 1, wherein the polymer composition has a molecular weight of at 1,000s according to ISO test No. 11443:2014 ^-1 From about 10Pa-s to about 250Pa-s as measured at a temperature 15 ℃ above the melt temperature of the composition.

22. The molded interconnect device of claim 1, wherein the conductive element comprises a metal.

23. The molded interconnect device of claim 1, wherein channels in the form of an interconnect pattern are formed in the substrate, and wherein the conductive elements are disposed within the channels.

24. The molded interconnect device of claim 23, wherein the conductive element comprises a first metal layer and a second metal layer.

25. A method for forming the molded interconnect device of claim 1, the method comprising: the surface of the substrate is ablated with a laser to form an interconnect pattern, and the conductive elements are deposited within the interconnect pattern on the substrate.

26. The method of claim 25, the conductive element being formed by a process comprising depositing a seed layer within the interconnect pattern and then electrolytically plating metal on the seed layer.

27. The method of claim 26, wherein the seed layer comprises a conductive paste.