CN116131779A - Radio frequency low noise amplifier based on Lange coupler - Google Patents
Radio frequency low noise amplifier based on Lange coupler Download PDFInfo
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- CN116131779A CN116131779A CN202310401909.7A CN202310401909A CN116131779A CN 116131779 A CN116131779 A CN 116131779A CN 202310401909 A CN202310401909 A CN 202310401909A CN 116131779 A CN116131779 A CN 116131779A
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- transmission line
- amplifying unit
- transistor
- lange coupler
- low noise
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a radio frequency low noise amplifier based on a Lange coupler, which relates to a 5G circuit technology and aims at solving the problems that the traditional interstage matching scheme in the prior art is complex in structure, high in loss and the like. Is characterized in that the first-stage amplifying unit and the second-stage amplifying unit are coupled and connected through a Lange coupler. The low noise amplifier has the advantages that the bandwidth of the amplifier is expanded and the performance of the low noise amplifier is improved by properly using the transmission line and the coupler in the input/output matching circuit and the inter-stage matching circuit.
Description
Technical Field
The invention relates to a 5G circuit technology, in particular to a radio frequency low noise amplifier based on a Lange coupler.
Background
In a radio frequency front end receiver system, a low noise amplifier plays a crucial role as a first stage amplifier next to an antenna, and its noise figure affects the noise characteristics of the whole system. According to the fries formula, the noise figure of the first stage has the largest noise contribution to the whole receiver, and the gain of the first stage amplifier can suppress the noise contribution of the whole subsequent stage. The low noise amplifier determines the minimum signal level that the entire receiver can handle and is critical to improving the receiver sensitivity. Modern wireless communications require that the receiver can cover as many frequency bands as possible to accommodate different communication standards. Therefore, a wideband high gain low noise amplifier is necessary for modern radio frequency receivers.
The traditional low-noise amplifier adopts lumped LC element matching, and has obvious parasitic effect in the 5G millimeter wave frequency band, mainly faces the problems of poor matching effect, narrow bandwidth, large matching loss, higher noise and the like, and the bandwidth provided by a single-section transmission line converter is limited. In addition, the scheme structure of expanding bandwidth by adopting a high-order LC network in the traditional interstage matching is complex, and the loss is high. The common coupling line coupler has loose coupling, low coupling and narrow bandwidth.
Reference is made to:
[1] chinese patent "a high gain ultra wideband low noise amplifier", publication No. CN113098404A;
[2] chinese patent, "a high performance millimeter wave low noise composite amplifier", publication No. CN112290894a;
[3] chinese patent "a high performance low noise amplifier of 24-29 GHZ", publication No. CN113949352A.
Disclosure of Invention
The invention aims to provide a radio frequency low noise amplifier based on a Lange coupler so as to solve the problems in the prior art.
According to the radio frequency low noise amplifier based on the Lange coupler, the first-stage amplifying unit and the second-stage amplifying unit are coupled and connected through the Lange coupler.
The device comprises an input matching unit, a common source amplifying unit, a Lange coupler, a common source common gate amplifying unit and an output matching unit which are electrically connected in sequence; wherein the common source amplifying unit is the first stage amplifying unit, and the common source common gate amplifying unit is the second stage amplifying unit.
The isolation end of the Lange coupler is externally connected with a second grid bias voltage, the input end of the Lange coupler is connected with the output end of the common-source amplifying unit, the through end of the Lange coupler is externally connected with a first drain bias voltage, and the coupling end of the Lange coupler is connected with the input end of the common-source common-gate amplifying unit.
The input matching unit comprises a first capacitor, a first transmission line, a second transmission line, a third transmission line and a first resistor; the first capacitor, the first transmission line, the second transmission line and the third transmission line are sequentially connected along the signal transmission direction; one end of the third transmission line far away from the first capacitor is connected with the input end of the common source amplifying unit, and is externally connected with a first grid bias voltage through a first resistor.
The first transmission line, the second transmission line and the third transmission line are of multi-section structures with widths decreasing in sequence.
The common source amplifying unit comprises a first transistor, a second resistor, a first inductor, a third capacitor, a second capacitor and a second inductor; the second resistor, the first inductor and the third capacitor are sequentially connected in series and then connected in parallel between the grid electrode and the drain electrode of the first transistor; the second capacitor is connected in parallel between the grid electrode and the source electrode of the first transistor; the grid of the first transistor is the input end of the common source amplifying unit, the drain electrode of the first transistor is the output end of the common source amplifying unit, and the source electrode of the first transistor is grounded through the second inductor.
The cascode amplifying unit comprises a second transistor, a third transistor, a fourth inductor, a fourth transmission line, a fifth capacitor and a third resistor; the grid of the second transistor is an input end of the common-source common-gate amplifying unit, the source electrode of the second transistor is grounded through a fourth inductor, and the drain electrode of the second transistor and the source electrode of the third transistor are grounded after being in the same point and sequentially pass through a fourth transmission line and a fifth capacitor; and the grid electrode of the third transistor is externally connected with a third grid electrode bias voltage through a third resistor, and the drain electrode of the third transistor is the output end of the common-source common-grid amplifying unit.
The output matching unit comprises a fourth capacitor, a fifth transmission line, a sixth transmission line, a seventh transmission line and a third inductor; the fourth capacitor, the fifth transmission line, the sixth transmission line and the seventh transmission line are sequentially connected along the signal transmission direction; one end of the fourth capacitor, which is far away from the seventh transmission line, is connected with the output end of the common-source common-gate amplifying unit, and is externally connected with a second drain bias voltage through a third inductor.
The fifth transmission line, the sixth transmission line and the seventh transmission line are of a multi-section structure with widths gradually decreasing.
The radio frequency low noise amplifier based on the Lange coupler has the advantages that the bandwidth of the amplifier is expanded and the performance of the low noise amplifier is improved by properly using the transmission line and the coupler in the input/output matching circuit and the interstage matching circuit. Meanwhile, by introducing an additional first transistor parallel gate source capacitor, the noise coefficient is improved, and meanwhile, the problem that the traditional low-noise amplifier needs to increase the transistor size and therefore consumes larger power is solved. By adopting a plurality of sections of transmission lines at the input and output ends, the input and output return loss in the broadband is reduced, and the input and output matching is improved. By adopting the Lange coupler in the inter-stage network, the drain electrode of the front stage and the grid electrode of the rear stage are directly fed, so that the use of extra choke inductance and blocking capacitance is avoided, the loss of signals in inter-stage transmission is reduced while the high coupling degree is maintained, a plurality of zero poles are introduced, and the bandwidth is further widened. The RLC series resonant paths are added at the two ends of the gate and the drain of the first transistor to form a gate and drain negative feedback, and the intrinsic miller capacitance Cgd of the transistor is neutralized by adjusting the size of the inductor, so that the frequency characteristic and the stability of the amplifier are improved. By introducing a TL-C series network in parallel to ground between the cascode cells, the parasitic capacitance of the intermediate node is cancelled, improving the gain characteristics.
Drawings
Fig. 1 is a schematic diagram of a radio frequency low noise amplifier based on Lange coupler according to the present invention.
Fig. 2 is a schematic circuit diagram of a radio frequency low noise amplifier based on Lange coupler according to the present invention.
Fig. 3 is a graph of a simulation of the gain of a Lange coupler-based rf low noise amplifier according to the present invention.
Fig. 4 is a graph of the return loss simulation of a Lange coupler-based rf low noise amplifier according to the present invention.
Fig. 5 is a graph showing the simulation of noise figure of a radio frequency low noise amplifier based on Lange coupler according to the present invention.
Reference numerals:
cd1 to Cd 5-first to fifth decoupling capacitors;
c1 to C5-first to fifth capacitances;
r1 to R3-first to third resistances;
l1 to L4-first to fourth inductances;
TL1 to TL 7-first to seventh transmission lines;
m1 to M3-first to third transistors;
vg1 to Vg 3-first to third gate bias voltages;
vd1 to Vd 2-first to second drain bias voltages.
Detailed Description
As shown in fig. 1 and fig. 2, the first-stage amplifying unit and the second-stage amplifying unit of the radio-frequency low-noise amplifier based on the Lange coupler are coupled and connected through the Lange coupler. The device specifically comprises an input matching unit, a common source amplifying unit, a Lange coupler, a common source common gate amplifying unit and an output matching unit which are electrically connected in sequence; wherein the common source amplifying unit is the first stage amplifying unit, and the common source common gate amplifying unit is the second stage amplifying unit.
Because of the adoption of magnetic coupling, two paths in the Lange coupler do not have direct current channels, and the blocking capacitor can be omitted. Compared with a general coupling line, the Lange coupler improves the contribution of the fringe stray field to coupling, improves the coupling degree and reduces the loss of signals. In addition, the structure of the Lange coupler helps to compensate for the unequal phase velocities of the even and odd modes, while improving bandwidth. By adjusting the length, width and spacing of the Lange coupler transmission lines, the impedance transformation ratio can be adjusted, thereby achieving impedance matching.
The isolation end of the Lange coupler is externally connected with a second grid bias voltage Vg2, the input end of the Lange coupler is connected with the output end of the common source amplifying unit, the through end of the Lange coupler is externally connected with a first drain bias voltage Vd1, and the coupling end of the Lange coupler is connected with the input end of the common source common gate amplifying unit.
The input matching unit comprises a first capacitor C1, a first transmission line TL1, a second transmission line TL2, a third transmission line TL3 and a first resistor R1; the first capacitor C1, the first transmission line TL1, the second transmission line TL2, and the third transmission line TL3 are sequentially connected along the signal transmission direction; one end of the third transmission line TL3, which is far away from the first capacitor C1, is connected to the input end of the common source amplifying unit, and is externally connected to the first gate bias voltage Vg1 through the first resistor R1.
The first transmission line TL1, the second transmission line TL2 and the third transmission line TL3 have a multi-section structure with sequentially decreasing widths.
The common source amplifying unit comprises a first transistor M1, a second resistor R2, a first inductor L1, a third capacitor C3, a second capacitor C2 and a second inductor L2; the second resistor R2, the first inductor L1 and the third capacitor C3 are sequentially connected in series and then connected in parallel between the grid electrode and the drain electrode of the first transistor M1; the second capacitor C2 is connected in parallel between the grid electrode and the source electrode of the first transistor M1; the gate of the first transistor M1 is an input end of the common-source amplifying unit, the drain of the first transistor M1 is an output end of the common-source amplifying unit, and the source of the first transistor M1 is grounded through the second inductor L2.
The cascode amplifying unit comprises a second transistor M2, a third transistor M3, a fourth inductor L4, a fourth transmission line TL4, a fifth capacitor C5 and a third resistor R3; the gate of the second transistor M2 is an input end of the cascode amplifying unit, the source of the second transistor M2 is grounded through the fourth inductor L4, and the drain of the second transistor M2 and the source of the third transistor M3 are grounded after passing through the fourth transmission line TL4 and the fifth capacitor C5 in sequence after being co-point; the gate of the third transistor M3 is externally connected with a third gate bias voltage Vg3 through a third resistor R3, and the drain of the third transistor M3 is the output terminal of the cascode unit.
The output matching unit comprises a fourth capacitor C4, a fifth transmission line TL5, a sixth transmission line TL6, a seventh transmission line TL7 and a third inductor L3; the fourth capacitor C4, the fifth transmission line TL5, the sixth transmission line TL6 and the seventh transmission line TL7 are sequentially connected along the signal transmission direction; one end of the fourth capacitor C4 far away from the seventh transmission line TL7 is connected to the output end of the cascode unit, and is externally connected to the second drain bias voltage Vd2 through the third inductor L3.
The fifth transmission line TL5, the sixth transmission line TL6 and the seventh transmission line TL7 have a multi-section structure with sequentially decreasing widths.
Lange couplers are coupled to each other using several parallel lines, can achieve a 3dB coupling ratio, and have a bandwidth of one octave or more. Simulation results of the radio frequency low noise amplifier loaded with the Lange coupler are shown in fig. 3 to 5.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (9)
1. A radio frequency low noise amplifier based on Lange coupler is characterized in that a first-stage amplifying unit and a second-stage amplifying unit are coupled and connected through the Lange coupler.
2. The radio frequency low noise amplifier based on Lange coupler according to claim 1, comprising an input matching unit, a common source amplifying unit, a Lange coupler, a common source common gate amplifying unit and an output matching unit which are electrically connected in sequence; wherein the common source amplifying unit is the first stage amplifying unit, and the common source common gate amplifying unit is the second stage amplifying unit.
3. The radio frequency low noise amplifier based on the Lange coupler according to claim 2, wherein the isolation end of the Lange coupler is externally connected with a second gate bias voltage (Vg 2), the input end of the Lange coupler is connected with the output end of the common source amplifying unit, the pass-through end of the Lange coupler is externally connected with a first drain bias voltage (Vd 1), and the coupling end of the Lange coupler is connected with the input end of the common source common gate amplifying unit.
4. A Lange coupler based radio frequency low noise amplifier according to claim 3, wherein the input matching unit comprises a first capacitor (C1), a first transmission line (TL 1), a second transmission line (TL 2), a third transmission line (TL 3) and a first resistor (R1); the first capacitor (C1), the first transmission line (TL 1), the second transmission line (TL 2) and the third transmission line (TL 3) are sequentially connected along the signal transmission direction; one end of the third transmission line (TL 3) far away from the first capacitor (C1) is connected with the input end of the common source amplifying unit, and is externally connected with a first grid bias voltage (Vg 1) through a first resistor (R1).
5. The Lange coupler-based radio frequency low noise amplifier according to claim 4, wherein the first transmission line (TL 1), the second transmission line (TL 2) and the third transmission line (TL 3) have a multi-section structure with sequentially decreasing widths.
6. A Lange coupler based radio frequency low noise amplifier according to claim 3, wherein the common source amplifying unit comprises a first transistor (M1), a second resistor (R2), a first inductance (L1), a third capacitance (C3), a second capacitance (C2) and a second inductance (L2); the second resistor (R2), the first inductor (L1) and the third capacitor (C3) are sequentially connected in series and then connected in parallel between the grid electrode and the drain electrode of the first transistor (M1); the second capacitor (C2) is connected in parallel between the grid electrode and the source electrode of the first transistor (M1); the grid electrode of the first transistor (M1) is an input end of the common source amplifying unit, the drain electrode of the first transistor (M1) is an output end of the common source amplifying unit, and the source electrode of the first transistor (M1) is grounded through the second inductor (L2).
7. A Lange coupler based radio frequency low noise amplifier according to claim 3, wherein the cascode amplifying unit comprises a second transistor (M2), a third transistor (M3), a fourth inductance (L4), a fourth transmission line (TL 4), a fifth capacitance (C5) and a third resistance (R3); the grid electrode of the second transistor (M2) is an input end of the common-source common-gate amplifying unit, the source electrode of the second transistor (M2) is grounded through a fourth inductor (L4), and the drain electrode of the second transistor (M2) and the source electrode of the third transistor (M3) are grounded after being in the same point and sequentially pass through a fourth transmission line (TL 4) and a fifth capacitor (C5); the grid electrode of the third transistor (M3) is externally connected with a third grid electrode bias voltage (Vg 3) through a third resistor (R3), and the drain electrode of the third transistor (M3) is the output end of the cascode amplifying unit.
8. A Lange coupler based radio frequency low noise amplifier according to claim 3, wherein the output matching unit comprises a fourth capacitor (C4), a fifth transmission line (TL 5), a sixth transmission line (TL 6), a seventh transmission line (TL 7) and a third inductance (L3); the fourth capacitor (C4), the fifth transmission line (TL 5), the sixth transmission line (TL 6) and the seventh transmission line (TL 7) are sequentially connected along the signal transmission direction; one end of the fourth capacitor (C4) far away from the seventh transmission line (TL 7) is connected with the output end of the cascode amplifying unit and externally connected with a second drain bias voltage (Vd 2) through a third inductor (L3).
9. The Lange coupler-based radio frequency low noise amplifier according to claim 8, wherein the fifth transmission line (TL 5), the sixth transmission line (TL 6) and the seventh transmission line (TL 7) have a multi-section structure with sequentially decreasing widths.
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