CN116130334A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
CN116130334A
CN116130334A CN202211703183.4A CN202211703183A CN116130334A CN 116130334 A CN116130334 A CN 116130334A CN 202211703183 A CN202211703183 A CN 202211703183A CN 116130334 A CN116130334 A CN 116130334A
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CN
China
Prior art keywords
wafer
nozzles
nozzle
cleaning
spray
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Pending
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CN202211703183.4A
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Chinese (zh)
Inventor
曹自立
李长坤
孙传恽
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Huahaiqingke Co Ltd
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Huahaiqingke Co Ltd
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Filing date
Publication date
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Publication of CN116130334A publication Critical patent/CN116130334A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B08B1/12—
    • B08B1/32—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a wafer cleaning method, which comprises the following steps: placing a wafer in a housing; spraying the fluid towards the wafer by using a spraying component, wherein the spraying direction of the spraying component is matched with the rotation direction of the wafer, and the spraying fluid is sprayed towards the wafer at different angles so that the sprayed fluid covers the surface of the wafer; the cleaning brushes positioned at the two sides of the wafer are moved to the cleaning position so as to carry out rolling brush cleaning on the front surface and the back surface of the wafer.

Description

Wafer cleaning method
Technical Field
The invention belongs to the technical field of wafer post-treatment, and particularly relates to a wafer cleaning method.
Background
The integrated circuit industry is the core of the information technology industry and plays a key role in the process of converting and upgrading the boosting manufacturing industry into digital and intelligent conversion. The chip is a carrier of an integrated circuit, and the chip manufacturing involves the process flows of integrated circuit design, wafer manufacturing, wafer processing, electrical measurement, dicing packaging, testing, and the like.
In the wafer manufacturing process, the surface of the wafer may adsorb contaminants such as particles or organic matters to generate a large number of defects, and a post-treatment process is required to remove the defects. In particular, the large amounts of chemicals and abrasives used in chemical mechanical polishing (Chemical Mechanical Polishing, CMP) cause contamination of the wafer surface, so post-treatment processes, typically consisting of rinsing and drying to provide a smooth and clean wafer surface, are required to be introduced after polishing to remove contaminants from the wafer surface.
The wafer cleaning method comprises the following steps: rolling brush cleaning, megasonic cleaning and the like, wherein the rolling brush cleaning has wider application. The wafer cleaning apparatus disclosed in patent CN112233971B vertically supports a wafer by a support roller and drives the wafer to rotate, and a liquid spraying structure is disposed on a housing to supply cleaning liquid and rinsing liquid for cleaning the wafer. The spray structure adopts a bilateral symmetry structure, 5 spray nozzles are arranged on each side spray pipe, and the drop point of the spray fluid on the wafer is symmetrical about the longitudinal section passing through the center of the wafer, as shown in fig. 1.
In fig. 1, the nozzle is a solid cone nozzle, the liquid amount is strong in the middle and weak at the edge, so that the nozzle sprays the wafer surface near the center of the drop point, has strong conveying capability of cleaning liquid and rinsing liquid, and can be marked as a strong action area. When the wafer is static, the strong action area is only distributed at 5 limited positions, the wafer can rotate to improve the uniformity of liquid distribution to a certain extent, but the rotating wafer can enable liquid to spread away from the center of the wafer under the action of centrifugal force, so that enough liquid is not directly sprayed near the center of the wafer, and the insufficient cleaning liquid and rinsing liquid in the center area of the wafer easily cause cleaning defects in the area, especially in certain metal processes, the distribution requirements of the cleaning liquid and the rinsing liquid are higher, and the liquid supply capacity of the cleaning liquid and the rinsing liquid in the center of the wafer needs to be improved.
Disclosure of Invention
The embodiment of the invention provides a wafer cleaning method, which aims at solving at least one of the technical problems existing in the prior art.
The embodiment of the invention provides a wafer cleaning method, which comprises the following steps:
s1, placing a wafer in a shell;
s2, spraying fluid towards the wafer by using a liquid spraying assembly, wherein the spraying direction of the liquid spraying assembly is matched with the rotation direction of the wafer, and the liquid is sprayed towards the wafer at different angles so that the sprayed fluid covers the surface of the wafer;
and S3, the cleaning brushes positioned at the two sides of the wafer are moved to the cleaning positions so as to perform rolling brush cleaning on the front and back sides of the wafer.
In some embodiments, the spray assembly includes a nozzle disposed on the wafer to spray fluid toward different areas of the wafer.
In some embodiments, the number of nozzles is multiple to spray fluid toward the edge, center, and middle regions of the wafer, and the sprayed fluids are staggered with respect to each other.
In some embodiments, at least two of the nozzles disposed toward the wafer edge region are mutually opposed; the drop points of the spray fluid of the nozzles are staggered.
In some embodiments, the nozzles disposed in the wafer rotation direction have smaller apertures than the impinging nozzles.
In some embodiments, the spray landing point of the spray nozzle disposed toward the center region of the wafer is located above the center point of the wafer.
In some embodiments, the nozzles disposed toward different areas of the wafer are at different angles to the horizontal plane in which the wafer post-processing device is located.
In some embodiments, the angle between the nozzle disposed toward the middle region of the wafer and the horizontal plane of the post-processing device is greater than the angle between the nozzle disposed toward the edge region of the wafer and the horizontal plane of the post-processing device.
In some embodiments, the angle between the nozzle disposed toward the center region of the wafer and the horizontal plane of the post-processing device is greater than the angle between the nozzle disposed toward the middle region of the wafer and the horizontal plane of the post-processing device.
In some embodiments, the nozzles can adjust their spray direction, and the nozzles disposed toward different areas of the wafer have different angles from the vertical plane of the wafer post-processing apparatus.
The beneficial effects of the invention include:
a. the configured nozzles spray the fluid from the upper side of the wafer at different angles, so that the fluid completely covers the surface of the wafer and forms a thicker liquid film, the acting time of the fluid on the surface of the wafer is prolonged, the sufficient cleaning is realized, and the number of defects in the post-processing of the wafer is reduced;
b. the nozzles arranged towards the central area of the wafer are nozzles with good fluid convergence performance, so that the centrifugal force in the middle of the wafer is overcome, fresh fluid is conveyed towards the center of the wafer, and the cleaning capability of the central area of the wafer is enhanced.
Drawings
The advantages of the present invention will become more apparent and more readily appreciated from the detailed description given in conjunction with the following drawings, which are meant to be illustrative only and not limiting of the scope of the invention, wherein:
FIG. 1 is a schematic view of a spray structure in a prior art wafer cleaning apparatus;
FIG. 2 is a schematic diagram of a wafer post-processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a spray assembly disposed on a wafer according to an embodiment of the present invention;
FIG. 4 is a flow chart of a wafer cleaning method according to an embodiment of the present invention;
FIG. 5 is a schematic view of the corresponding inclination angle of the nozzles on the spray assembly;
fig. 6 is a schematic view of a nozzle provided with a fixing assembly according to an embodiment of the present invention.
Detailed Description
The following describes the technical scheme of the present invention in detail with reference to specific embodiments and drawings thereof. The examples described herein are specific embodiments of the present invention for illustrating the concept of the present invention; the description is intended to be illustrative and exemplary in nature and should not be construed as limiting the scope of the invention in its aspects. In addition to the embodiments described herein, those skilled in the art can adopt other obvious solutions based on the disclosure of the claims of the present application and the specification thereof, including those adopting any obvious substitutions and modifications to the embodiments described herein.
The drawings in the present specification are schematic views, which assist in explaining the concept of the present invention, and schematically show the shapes of the respective parts and their interrelationships. It should be understood that for the purpose of clearly showing the structure of various parts of embodiments of the present invention, the drawings are not drawn to the same scale and like reference numerals are used to designate like parts in the drawings.
In the present invention, "chemical mechanical polishing (Chemical Mechanical Polishing, CMP)" is also referred to as "chemical mechanical planarization (Chemical Mechanical Planarization, CMP)", and Wafer (W) is also referred to as Substrate (Substrate), the meaning and actual function are equivalent.
The invention provides a wafer post-processing device, which is schematically shown in fig. 2. The wafer post-processing apparatus includes a housing 10, and a liquid spray assembly 20 and a cleaning brush 30 are disposed inside the housing 10.
In fig. 2, the spray assembly 20 is disposed on the upper side of the wafer W, and the spray assembly 20 includes a plurality of nozzles, wherein the spray directions of the nozzles are matched with the rotation direction of the wafer W, and the nozzles spray toward the surface of the wafer at different angles, so that the sprayed fluid covers the surface of the wafer W entirely.
When the spray assembly 20 sprays the cleaning liquid, the cleaning liquid covers the surface of the wafer entirely so as to improve the cleaning capability of the wafer; when the spray assembly 20 sprays a rinse solution, such as Deionized Water (DIW), the full coverage of the rinse solution can enhance the rinsing capability of the wafer.
Further, nozzles are provided on the upper side of the wafer W to spray fluid toward different areas of the wafer W, as shown in fig. 3. Specifically, a plurality of nozzles spray fluid toward the edge region, the center region, and the middle region of the wafer.
In order to avoid the splashing caused by the collision of the fluid sprayed by the nozzles, the nozzles are required to be staggered. Fig. 3 is a front view of a wafer to be cleaned, the nozzle spray direction indicating lines intersect in fig. 3 due to the spray direction projection, and the actual fluids are staggered in three dimensions to avoid sputtering caused by front impingement of the fluids.
In the embodiment shown in fig. 3, the nozzle is a cylindrical nozzle instead of a solid cone nozzle in the prior art, and the fluid sprayed by the cylindrical nozzle has good convergence, so as to accurately supply the fluid, prevent the nozzle from spraying the fluid beyond the edge of the wafer, and improve the utilization rate of the wafer cleaning fluid.
As an embodiment of the present invention, the spray assembly 20 includes 4 nozzles, namely, a first nozzle 20a, a second nozzle 20b, a third nozzle 20c and a fourth nozzle 20d, as shown in fig. 3, wherein the nozzles are staggered to each other on the upper side of the wafer W, and the sprayed fluid is rapidly dispersed on the surface of the wafer under the action of gravity and centrifugal force.
In the present invention, at least two nozzles are provided toward the wafer edge area, which are opposed to each other. In fig. 3, the first nozzle 20a and the fourth nozzle 20d are staggered with respect to each other to spray fluid toward the wafer edge area. Wherein the jetting direction of the first nozzle 20a is compliant with the wafer rotation direction, and the jetting direction of the fourth nozzle 20d is opposite to the jetting direction of the first nozzle 20 a. The drop points of the fluid sprayed by the first nozzle 20a and the drop points of the fluid sprayed by the fourth nozzle 20d are staggered to avoid sputtering caused by front impact of the fluid, and meanwhile, the liquid flow sprayed to the wafer surface is favorably and rapidly spread out, so that the full coverage of the wafer surface is realized.
Meanwhile, the present invention provides a wafer cleaning method, as shown in fig. 4, which includes:
s1, placing a wafer in a shell 10;
s2, spraying fluid towards the wafer by using the spray assembly 20, wherein the spraying direction is matched with the rotation direction of the wafer, and spraying the fluid towards the wafer at different angles so that the sprayed fluid covers the surface of the wafer;
and S3, the cleaning brushes 30 positioned on the two sides of the wafer are moved to the cleaning positions so as to perform rolling brush cleaning on the front surface and the back surface of the wafer.
In the embodiment shown in fig. 3, the fourth nozzle 20d has a larger aperture than the first nozzle 20a to ensure that more fluid is ejected toward the nozzle at the wafer edge area. The fluid sprayed by the nozzle can cover a larger area along with the rotation of the wafer so as to form a uniform liquid film on the surface of the wafer and improve the cleaning capability of the surface of the wafer.
Preferably, the fourth nozzle 20d has a bore diameter of 1.5-3 mm and the first nozzle 20a has a bore diameter of 1-2 mm to supply sufficient fluid at the edge of the wafer so that a thicker liquid film is formed on the wafer surface.
To solve the problem that defects often occur due to insufficient supply of the liquid to the center area of the wafer, the third nozzle 20c is sprayed toward the center area of the wafer to directly supply the cleaning liquid or the rinsing liquid toward the center of the wafer. Specifically, the ejection landing point of the nozzle disposed toward the wafer center area is located on the upper side of the wafer center point.
So set up, the fluid that sprays from third nozzle 20c can cover the central region of wafer under gravity and inertial action fast, guarantee the feeding ability of washing liquid or rinsing liquid to reduce the washing defect that produces because of the central region supplies the liquid inadequately, promote the cleaning performance of wafer.
In fig. 3, the spray assembly further includes a second nozzle 20b that sprays fluid toward the middle region of the wafer. The middle region is referred to herein as the edge region and the center region, i.e., the middle region is located between the edge region and the center region. The ejection landing point of the second nozzle 20b is located at the lower side of the first nozzle 20a and the fourth nozzle 20d and at the upper side of the third nozzle 20 c.
In wafer cleaning, a plurality of nozzles simultaneously spray fluid toward the wafer, and the boundary between the zones in fig. 3 is only an exaggerated illustration to better embody the technical solution. In practice, the liquid film on the wafer surface is continuous, with no discontinuities or distinct boundaries. The fluids ejected from different nozzles naturally merge together on the wafer surface to form a continuous liquid film.
As another embodiment of the present invention, the nozzles disposed toward the middle region of the wafer are at different angles from the horizontal plane in which the wafer post-processing apparatus is located. Specifically, the angles between the first nozzle 20a, the second nozzle 20b, the third nozzle 20c and the fourth nozzle 20d and the horizontal plane of the wafer post-processing apparatus are α respectively 1 、α 2 、α 3 、α 4 As shown in fig. 5, a vertical section through the center of the wafer is indicated by a dash-dot line.
Further, the second nozzle 20b disposed toward the middle area of the wafer forms an angle α with the horizontal plane of the wafer post-processing apparatus 2 Is larger than the included angle alpha between the first nozzle 20a arranged towards the edge area of the wafer and the horizontal plane of the wafer post-treatment device 1 . And the angle alpha between the third nozzle 20c arranged towards the central area of the wafer and the horizontal plane of the wafer post-processing device 3 Is greater than the angle alpha between the second nozzle 20b facing the middle area of the wafer and the horizontal plane of the wafer post-treatment device 2 。
Specifically, the first nozzle 20a and the fourth nozzle 20d form an included angle α with the horizontal plane of the wafer post-processing apparatus 1 Alpha and alpha 4 About the same, included angle alpha 1 Alpha and alpha 4 Should be less than or equal to 30 °. Included angle alpha 2 Should be less than 45 DEG, included angle alpha 3 Should be greater than 40 ° and less than 80 °.
It will be appreciated that the angle of the nozzle relative to the horizontal plane of the vertical brushing device is adjustable to accommodate wafer cleaning of different sizes and different process conditions. Specifically, the fixed seat for fixing the nozzle can swing or rotate around the fixed point so as to realize the adjustment of the injection angle of the nozzle.
As another embodiment of the present invention, the nozzles disposed toward different areas of the wafer have different angles with respect to the vertical plane of the wafer post-processing apparatus, i.e., the nozzles disposed toward different areas of the wafer have different angles with respect to the side of the wafer to be cleaned.
Fig. 6 is a schematic diagram of the nozzle 20a provided in an embodiment of the present invention disposed on the fixing component 40. The fixing assembly 40 includes a support 41 and a mounting member 42, the support 41 being provided to the housing 10 shown in fig. 2, the mounting member 42 being rotatably coupled to the support 41, and the nozzle 20a being provided at a side portion of the mounting member 42.
Further, the mounting member 42 has an L-shaped structure, and the nozzle 20a is rotatably connected to the mounting member 42, so as to adjust the position and posture of the nozzle 20a according to disclosure, thereby meeting the process requirements of wafer post-processing.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A method of cleaning a wafer, comprising:
s1, placing a wafer in a shell;
s2, spraying fluid towards the wafer by using a liquid spraying assembly, wherein the spraying direction of the liquid spraying assembly is matched with the rotation direction of the wafer, and the liquid is sprayed towards the wafer at different angles so that the sprayed fluid covers the surface of the wafer;
and S3, the cleaning brushes positioned at the two sides of the wafer are moved to the cleaning positions so as to perform rolling brush cleaning on the front and back sides of the wafer.
2. The wafer cleaning method of claim 1, wherein the spray assembly comprises a nozzle disposed on the wafer to spray fluid toward different areas of the wafer.
3. The wafer cleaning method of claim 2, wherein the number of nozzles is a plurality of nozzles to spray fluid toward the edge region, the center region, and the middle region of the wafer, and the sprayed fluids are staggered with each other.
4. The wafer cleaning method of claim 3, wherein at least two of the nozzles disposed toward the edge region of the wafer are mutually opposed; the drop points of the spray fluid of the nozzles are staggered.
5. The wafer cleaning method of claim 4, wherein the nozzles disposed in the direction of wafer rotation have smaller apertures than the counter-jet nozzles.
6. The wafer cleaning method of claim 3, wherein the spray landing point of the spray nozzle disposed toward the center region of the wafer is located above the center point of the wafer.
7. The method of claim 2, wherein the nozzles disposed toward different areas of the wafer are at different angles from a horizontal plane in which the wafer post-processing device is disposed.
8. The wafer cleaning method of claim 7, wherein the angle between the nozzle disposed toward the middle region of the wafer and the horizontal plane of the post-processing device is greater than the angle between the nozzle disposed toward the edge region of the wafer and the horizontal plane of the post-processing device.
9. The wafer cleaning method of claim 7, wherein the angle between the nozzle disposed toward the center region of the wafer and the horizontal plane of the post-processing device is greater than the angle between the nozzle disposed toward the middle region of the wafer and the horizontal plane of the post-processing device.
10. The method of claim 2, wherein the nozzles are capable of adjusting their spray directions, and wherein the nozzles disposed toward different areas of the wafer are at different angles from the vertical of the wafer post-processing apparatus.
CN202211703183.4A 2021-12-31 2022-12-29 Wafer cleaning method Pending CN116130334A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2021116761799 2021-12-31
CN202111676179.9A CN114472307A (en) 2021-12-31 2021-12-31 Vertical brushing device of wafer

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CN116130334A true CN116130334A (en) 2023-05-16

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CN202111676179.9A Pending CN114472307A (en) 2021-12-31 2021-12-31 Vertical brushing device of wafer
CN202223526652.8U Active CN219233267U (en) 2021-12-31 2022-12-29 Wafer post-processing device
CN202211703183.4A Pending CN116130334A (en) 2021-12-31 2022-12-29 Wafer cleaning method

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CN202223526652.8U Active CN219233267U (en) 2021-12-31 2022-12-29 Wafer post-processing device

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Publication number Priority date Publication date Assignee Title
CN201315314Y (en) * 2008-12-19 2009-09-23 中芯国际集成电路制造(上海)有限公司 Wafer cleaning device
JP5512424B2 (en) * 2010-07-06 2014-06-04 東京エレクトロン株式会社 Substrate cleaning apparatus and substrate cleaning method
JP6233569B2 (en) * 2013-10-03 2017-11-22 パナソニックＩｐマネジメント株式会社 Wafer cleaning apparatus and wafer cleaning method
CN103871938B (en) * 2014-03-31 2016-10-12 上海华力微电子有限公司 For cleaning the rinse bath of semiconductor crystal wafer
CN109048644B (en) * 2018-10-19 2023-05-16 清华大学 Wafer processing device and processing method and chemical mechanical polishing system
CN110957208A (en) * 2019-12-16 2020-04-03 长江存储科技有限责任公司 Wafer edge washing method and wafer washing device

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