CN116127903A - High-power PA chip layout and wind tunnel type self-heat-dissipation packaging design method - Google Patents
High-power PA chip layout and wind tunnel type self-heat-dissipation packaging design method Download PDFInfo
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Abstract
The invention discloses a layout and wind tunnel type self-heat-dissipation packaging design method of a high-power PA chip, which is applied to the field of wireless communication, and aims at solving the problems that the prior art lacks economy and effectively to automatically dissipate heat generated by the operation of the PA chip under the condition of no extra energy consumption and special heat dissipation circuit when the high-power PA chip is designed, so that various performances of the PA chip and even the whole wireless communication system, including service life, environment adaptability and the like are ensured, the manufacturing cost of a terminal and a base station integrating the PA chip is reduced, and the integration level is improved; the high-power PA chip adopts an elongated MMIC Die layout, and performs packaging design based on a fluid theory and a Bernoulli equation; the method can achieve the best heat dissipation effect in the application of the high-power amplifier chip.
Description
Technical Field
The invention belongs to the field of wireless communication, and particularly relates to a radio frequency microwave Power Amplifier (PA) chip packaging technology.
Background
With advances and developments in science and technology, wireless communication technology has played a great role in various production activities of people. The radio frequency microwave Power Amplifier (PA) chip is used as one of core devices of a radio frequency front end of a modern wireless communication system, and the performance strength of the PA chip determines the overall performance of the wireless communication system. In the technical field of wireless communication, a power amplification chip is required to transmit a modulation signal in a form of larger power, and the transmission specification is determined by various mutually independent wireless communication protocol standards, including transmission frequency, bandwidth, load, transmission power, efficiency, linearity and the like, and the specification requirements are the performance requirements of the radio frequency microwave power amplification chip. For some special scenes, such as satellite communication navigation terminals, base stations, smart phones and the like, high-power amplifier chips are often required to be integrated, however, the high-power amplifier chips have serious heat dissipation problems due to high heat accumulation generated during operation of transistors and high sealing integration of the chips, and the problems often cause abnormal operation of the transistors to deteriorate various performances of the PA chips, including service life, environment adaptability and the like, and even directly damage the PA chips. The invention provides a layout method and a wind tunnel type self-heat-dissipation packaging design method for a high-power PA chip aiming at the problems, and aims to economically and effectively dissipate heat generated when the PA chip works by using the layout and packaging design method under the conditions of no extra energy consumption and no addition of a heat dissipation circuit, so that various performances of the PA chip and even the whole wireless communication system, including service life, environment adaptability and the like, are improved.
The existing power amplifier chip often adopts a closed type packaging design due to consideration of protection of a chip core, and a chip layout design often adopts a multi-through hole design for facilitating heat dissipation. However, the design method is not beneficial to the long-term working stability of the high-power PA chip, and can cause abnormal working of the transistor due to untimely heat dissipation under the condition of high ambient temperature or long-time saturated working state of the chip, so that various performances of the PA chip, including service life, environment adaptability and the like, are deteriorated, and even the PA chip is directly damaged. There are also related documents that adopt multi-PA chip cascade to realize high-power amplification, but this is unfavorable for miniaturization and low power consumption of communication system, and does not accord with the design concept of modern high-efficiency, high-integration radio frequency terminal, basic station. There are also cooling and heat dissipation devices specially designed near the PA chip, but the disadvantages caused by this are also unfavorable for miniaturization and low power consumption of the communication system.
Disadvantages of the prior art: the existing power amplifier chip is often in a closed type packaging design due to consideration of protection of the chip core, and the chip layout is in a multi-through hole design, so that heat dissipation is facilitated. However, the design method is not suitable for the long-term working stability of the high-power PA chip, and is easy to cause abnormal working of the transistor due to untimely heat dissipation under the condition of high ambient temperature or long-time saturated working state of the chip, so that various performances of the PA chip, including service life, environment adaptability and the like, are deteriorated, and even the PA chip is directly damaged. Or the multi-PA chip cascade is adopted to realize high-power amplification, but the multi-PA chip cascade is unfavorable for miniaturization and low power consumption of a communication system, and does not accord with the design concept of modern high-efficiency and high-integration radio frequency terminals and base stations. There are also cooling and heat dissipation devices specially designed near the PA chip, but the disadvantages caused by this are also unfavorable for miniaturization and low power consumption of the communication system.
In summary, when designing a high-power PA chip, under the condition of no additional energy consumption and special heat dissipation circuit, the prior art lacks a solution for economically and effectively automatically dissipating heat generated during the operation of the PA chip, guaranteeing various performances of the PA chip and even the whole wireless communication system, including service life, environment adaptability and the like, reducing the manufacturing cost of terminals and base stations integrated with the PA chip, and improving the integration level.
Disclosure of Invention
In order to solve the technical problems, the invention provides a layout method and a wind tunnel type self-heat-dissipation packaging design method aiming at a high-power PA chip based on a fluid theory and a Bernoulli equation.
The invention adopts the technical scheme that: a layout of a high-power PA chip and a wind tunnel type self-heat-dissipation packaging design method are disclosed, wherein the high-power PA chip adopts an elongated MMIC Die layout, the chip is in cascade connection of multistage amplifying circuits, and the amplifying circuits at all stages are arranged on the same vertical central line in a central symmetry manner;
still including setting up ground connection through-hole, concrete: each stage of amplifying circuit comprises a plurality of vertical-row transistors, and a grounding through hole is arranged between two adjacent transistors in each horizontal row in each stage of amplifying circuit;
disposing the chip in an adapted elongated package-centered position; asymmetric openings are arranged on the long sides of two sides of the long and narrow package.
The long edges at two sides of the long and narrow package are respectively marked as a first long edge and a second long edge; the openings on the first side are first openings with the opening area on the outer wall being larger than the opening area on the inner wall, and the opening area on the outer wall of the openings on the second side is second openings with the opening area on the outer wall being smaller than the opening area on the inner wall.
The second opening is replaced with a third opening having an opening area on the outer wall equal to the opening area on the inner wall.
The second side long edge comprises at least 2 third openings.
The invention has the beneficial effects that: the method of the invention utilizes the layout and the packaging design of the PA chip to automatically release the heat generated during the operation of the PA chip economically and effectively under the condition of no extra energy consumption and special heat release circuit allocation, thereby guaranteeing various performances of the PA chip and even the whole wireless communication system, including service life, environment adaptability and the like, reducing the manufacturing cost of the terminal and the base station of the PA chip and improving the integration level. Meanwhile, the design has universality and universality, can be used for the design of various PA chips, can be used for high-integration chips which are allowed by other conditions and need to dissipate heat, and has good commercial value.
Drawings
FIG. 1 is a schematic diagram of analysis of a section of fluid in a capillary tube;
FIG. 2 is a schematic diagram of an MMIC Die three-stage amplifier circuit layout of a three-stage cascade PA;
FIG. 3 is a schematic diagram of a three stage amplifying circuit transistor and ground via arrangement in MMIC Die of a three stage cascade PA;
fig. 4 is a top view of a PA chip MMIC Die in a wind tunnel type self-heat dissipating package;
FIG. 5 is a schematic view of a wind tunnel design for a wind tunnel type self-heat-dissipating package;
fig. 6 is a wind tunnel design enhancement type schematic diagram of a wind tunnel type self-heat-dissipation package.
Detailed Description
To facilitate understanding of the technical content of the present invention by those skilled in the art, the following technical terms are first described:
1. ideal fluid refers to a fluid that is absolutely incompressible and has no viscosity.
2. The viscous actual fluid has inside it a resistance existing between two adjacent parts of relative movement, which resembles the friction resistance (internal friction) between two solids.
3. The compressible fluid changes its volume under ambient pressure. In general, a gas whose density does not change significantly can be regarded as an ideal fluid.
4. Bernoulli equation is presented by dane bernoulli in 1726, which is derived as follows:
setting: the density of fluid in the fine flow tube (shown in figure 1) is ρ, and a certain section of fluid a is analyzed 1 -a 2 Is characterized by: a, a 1 The process is as follows: s is S 1 v 1 p 1 ；S 1 Indicating the passage of fluid through a 1 Cross-sectional area of the region v 1 Indicating the passage of fluid through a 1 Flow rate at, p 1 Representation a 1 The pressure of the section at the location;
a 2 the process is as follows: s is S 2 v 2 p 2 ；S 2 Indicating the passage of fluid through a 2 Cross-sectional area of the region v 2 Indicating the passage of fluid through a 2 Flow rate at, p 2 Representation a 2 Pressure at the cross section;
after a small time Δτ, the fluid flows from a 1 a 2 Move to b 1 b 2 Assuming the mass of the fluid is m, the mechanical energy thereof is increasedThe method comprises the following steps:
according to the principle of conservation of energy, the system is subjected to non-conservative force to do work, and the increment of mechanical energy of the system is equal to the work done by the non-conservative force on the system:
ΔE＝W＝-(p 2 S 2 v 2 Δt-p l S 1 v 1 Δt)＝p l S1v 1 Δt-p 2 S 2 v 2 Δt
let the unit fluid flow v=s 1 v 1 Δt＝S 2 v 2 Δt is then
The bernoulli theorem proves that the sum of the kinetic energy, potential energy and pressure at the point per unit volume of fluid on the same streamline is a measure of the ideal fluid flow:
the invention provides a layout method and a wind tunnel type self-heat-dissipation packaging design method aiming at a high-power PA chip based on a fluid theory and a Bernoulli equation. The technical scheme of the invention is mainly divided into two parts, wherein the first part is an MMIC (monolithic microwave integrated circuit) Die (chip bare chip) long and narrow layout method aiming at a high-power amplification chip; the second part is a wind tunnel type self-heat-dissipation packaging design method. The two parts are simultaneously used for designing the high-power amplifier chip, so that the optimal heat dissipation effect can be achieved.
The first part is an MMIC (monolithic microwave integrated circuit) Die layout method aiming at a high-power amplifier chip. In general, a high-power PA chip is realized by cascading multiple stages of power amplifiers due to the gain characteristics of transistors and the limiting factors such as power capacity, so that an elongated MMIC Die layout is proposed. Taking MMIC Die of a common three-stage cascade PA chip as an example, the structure is shown in fig. 2.
In fig. 2, the three stages of amplifying circuits are centrally and symmetrically arranged on the same vertical central line, so that on the basis of guaranteeing the straightness of the radio frequency signal channel, the heat accumulation of the amplifying circuits at all stages is avoided, the subsequent wind tunnel type self-heat-dissipation packaging design is convenient, and the cold air filled in the wind tunnel can efficiently take away the heat generated in the amplifying circuits at all stages. And meanwhile, the arrangement of the transistors and the grounding through holes of each stage of amplifying circuit is shown in fig. 3.
In the design, each stage of amplifying circuit is provided with the grounding through hole in the middle of every transverse row of two adjacent transistors, so that heat of the amplifying circuit can be conveniently conducted to the outside of the chip through the grounding through holes, and heat dissipation is facilitated. The first-stage amplifying circuit does not exceed two vertical-row transistors, the second-stage amplifying circuit does not exceed two vertical-row transistors, and the third-stage amplifying circuit does not exceed four vertical-row transistors, so that the design can ensure the long and narrow shape of the MMIC Die of the PA chip and each transistor has at least one grounding through hole for heat dissipation. Meanwhile, a top view of the PA chip MMIC Die in the wind tunnel type self-heat-dissipating package is shown in fig. 4.
In general, the PA chip MMIC Die is disposed in the middle of the wind tunnel type self-heat-dissipation package, so that the cold air poured into the wind tunnel is convenient to efficiently take away the heat generated in the amplifying circuits at all levels, as shown in fig. 4. The chip layout method comprises, but is not limited to, common three-stage cascade PA chips, and can also be single-chip or two-stage cascade high-power PA chips.
The second part is a wind tunnel type self-heat-dissipation packaging design method. Namely, applying Bernoulli's principle to heat dissipation of a chip package creates a pressure differential. Assuming that the air is stable during the flow process, that is, assuming that all factors that can cause natural ventilation do not change with time, if a pressure difference exists between the inner wall and the outer wall on the same side of the outer surface of the package, the air flows through the heat dissipation hole, and the pressure difference is calculated as follows:
Δp represents the pressure differential across the outer surface of the package, v represents the flow rate of air through the aperture, ρ represents the air density through the aperture, ζ is the local resistance coefficient of the aperture.
The amount of air passing through the heat dissipation holes is:
q v is the air flow rate of the holes, and S is the area of the holes. As can be seen from the above equation, if the differential pressure Δp across needs to be changed, the area of the corresponding orifice needs to be changed.
Therefore, the invention provides that the long sides of the long and narrow package of the chip are provided with holes, and the PA chip can be effectively radiated on the premise that the protection of the package to the PA MMIC Die is not affected. The wind tunnel design of the wind tunnel type self-heat-dissipation packaging is shown in fig. 5.
Under the condition that only accelerating air circulation is considered and the influence of chip heating on the air pressure inside the package is not considered, a good package structure beneficial to air circulation is designed. The whole chip packages four wind tunnels with different areas, and the four wind tunnels are distributed in an asymmetric structure, and the theory of wind tunnel design according to the Bernoulli principle is as follows:
looking at the left air inlet first, after a small time Δτ (the thickness of the inner wall of the package is actually very thin, similar to the change in small time), the natural air (fluid) moves from the left air inlet to the left air outlet, i.e. from S1 to S2, and assuming that the mass of the fluid is Δm, the mechanical energy increment is:
according to the principle of conservation of energy, the system is subjected to non-conservative force to do work, the increment of mechanical energy of the system is equal to the work of the non-conservative force on the system, and the stress analysis of the structure knows:
W＝-(p 2 S 2 v 2 Δt-p 1 S 1 v 1 Δt)＝p 1 S 1 v 1 Δt-p 2 S 2 v 2 Δt
since Δe=w, let v=s 1 v 1 Δt＝S 2 v 2 Δt is
The subscripts 1 and 2 in the formula are used for distinguishing 2 different positions and are respectively marked as a position 1 and a position 2; s is S 1 Is the cross-sectional area at position 1, S 2 For cross-sectional area at position 2, p 1 For fluid pressure at position 1, p 2 For fluid pressure at position 2, v 1 For the velocity of the fluid at position 1, v 2 Is the velocity of the fluid at location 2.
Meanwhile, the outer surface S1 on the left side is smaller than the inner surface S2, so that the pressure of the air inlet on the left side is high relative to the pressure of the air outlet on the left side, and when the air is seen in the flowing direction of natural air, the air is forced to flow from a place with high pressure to a place with low pressure as fluid, and cold air can naturally flow from S1 to S2 in an acceleration way under the condition of no peripheral forced convection. Similarly, by analyzing the outer surface S3 of the right air inlet and the inner surface S4 of the right air outlet, it can be found that, because the inner surface S4 on the right is smaller than the outer surface S3 on the right, that is, the pressure of the right air inlet is higher than that of the right air outlet, the structure can make the cold air naturally accelerate from S4 to S3 without peripheral forced convection. Therefore, cold air filled in the wind tunnel can pass through the PAMMIC Die in the package to form a natural wind tunnel effect to take away heat generated during working in each stage of amplifying circuit, and the effect of effective self-heat dissipation is achieved.
Consider the case where the pressure inside the package becomes large due to the heat generated by the normal operation of the chip.
Combining boyle's law: PV = constant;
cover, lvsac law: V/T = constant;
avogalde Luo Dinglv: v/n = constant and,
obtaining an ideal gas state equation:
PV＝nRT
p is the pressure, V is the volume, n is the amount of gas (amount of substance in mol), T is the thermodynamic temperature, and R is a constant.
In the package structure, when the temperature increases, the amount and volume of the gas do not change, and the pressure increases, meaning that the pressure inside the package is greater than the pressure outside. Meanwhile, the molecular motion theory of high-temperature gas can be adopted: the temperature rise exacerbates the movement of the gas molecules, which increases the probability of collisions between the gas molecules, resulting in gas expansion, but the package structure leaves the internal gas volume substantially unchanged, so that the pressure within the package increases. The invention provides an enhanced wind tunnel type self-heat-dissipation packaging design as shown in fig. 6 under the conditions of process and chip thickness permission.
The enhanced packaging structure modifies the structure of the air outlet on the basis of the common type, and modifies the opening areas of the air inlet on the right side and the air outlet opening on the inner and outer walls on the left side respectively into inner and outer wind tunnels with the same area, namely into inner and outer wind tunnels with s4=s3; furthermore, the temperature inside the package is increased due to heating of the chip, and the pressure inside the package is increased, so that the air outlet structure of a common type is not required to be adopted to increase the pressure of the inner wall, more air outlet wind tunnels are designed, an enhanced natural wind tunnel effect is formed, and the purpose of high-efficiency heat dissipation can be achieved by accelerating circulation of cold air. Compared with the common type, the enhanced packaging structure has higher efficiency of heat dissipation characteristics, is more suitable for packaging power amplifier chips with serious heat generation during the DIE work of some MMICs, has special requirements on the packaging height and the punching process due to the large number of air outlets, and increases the design complexity.
The two parts of contents of the technical scheme of the invention are simultaneously adopted in the design of the high-power amplifier chip, so that the optimal heat dissipation effect can be achieved. And the long and narrow chip shape does not influence the overall volume of the chip, thereby being beneficial to the realization of high integration of the terminal and the base station of the PA chip.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. A layout of a high-power PA chip and a wind tunnel type self-heat-dissipation packaging design method are characterized in that the high-power PA chip adopts an elongated MMIC Die layout, the chip is in cascade connection of multistage amplifying circuits, and the amplifying circuits of all stages are arranged on the same vertical central line in a central symmetry manner;
the high-power PA chip further comprises a grounding through hole, and specifically: each stage of amplifying circuit comprises a plurality of vertical-row transistors, and a grounding through hole is arranged between two adjacent transistors in each horizontal row in each stage of amplifying circuit;
disposing the chip in an adapted elongated package-centered position; asymmetric openings are arranged on the long sides of two sides of the long and narrow package.
2. The method for designing the high-power PA chip layout and the wind tunnel type self-heat-dissipation package according to claim 1, wherein long sides of two long sides of the long and narrow package are respectively marked as a first long side and a second long side; the openings on the first side are first openings with the opening area on the outer wall being larger than the opening area on the inner wall, and the opening area on the outer wall of the openings on the second side is second openings with the opening area on the outer wall being smaller than the opening area on the inner wall.
3. The method for designing a high-power PA chip layout and wind tunnel type self-heat-dissipating package as set forth in claim 2, wherein the second opening is replaced with a third opening having an opening area on the outer wall equal to an opening area on the inner wall.
4. The method of designing a high power PA chip layout and wind tunnel type self-heat dissipating package as set forth in claim 3, wherein the second side long side includes at least 2 third openings.
5. The method for designing a layout and wind tunnel type self-heat-dissipating package of a high-power PA chip according to any one of claims 1 to 4, wherein the high-power PA chip is a single-die PA chip.
6. The method for designing a layout and wind tunnel type self-heat-dissipating package of a high-power PA chip according to any one of claims 1 to 4, wherein the high-power PA chip is a three-stage cascade PA chip.
7. The method for designing the layout and wind tunnel type self-heat-dissipation package of the high-power PA chip according to claim 6, wherein the first-stage amplifying circuit of the three-stage cascade PA chip does not exceed two vertical transistors, the second-stage amplifying circuit does not exceed two vertical transistors, and the third-stage amplifying circuit does not exceed four vertical transistors.
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