CN116124844A - Non-metal composite aging state multi-depth detection device based on excitation switching - Google Patents
Non-metal composite aging state multi-depth detection device based on excitation switching Download PDFInfo
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Abstract
The invention belongs to the technical field of non-metal composite material aging state detection, and particularly relates to a non-metal composite material aging state multi-depth detection device based on excitation switching. The detection device enables the excitation control module to gate the combination of the excitation electrode and the detection electrode corresponding to different detection depths through switching control signals, and realizes the depth detection of three layers of shallow, medium and deep aging states of the nonmetallic composite material. Non-metal composite material ageing state multi-depth detection device based on excitation switching, including: a sensor unit and an instrument control end; the instrument control end comprises a signal generation module, a signal amplifier, a lock-in amplifier and a switching control and data acquisition module; the sensor unit comprises an excitation electrode, a detection electrode, an excitation control module and a signal primary processing module; the exciting electrode and the detecting electrode are prepared and formed on the same PCB base plate in a printing and printing mode.
Description
Technical Field
The invention belongs to the technical field of non-metal composite material aging state detection, and particularly relates to a non-metal composite material aging state multi-depth detection device based on excitation switching.
Background
The nonmetallic composite material is used as a novel composite material for replacing the traditional material, has wide application prospect in many fields, for example, the typical representative glass fiber reinforced plastic of the nonmetallic composite material has the advantages of stable performance, fatigue resistance, long service life, high temperature resistance, corrosion resistance, strong designability, high mechanical strength and the like, and is widely used in the fields of petrochemical industry, buildings, automobiles, railway transportation and the like. Taking the petrochemical field as an example, glass fiber reinforced plastics are widely used for corrosion-resistant oil pipelines, storage tanks and the like.
However, oil pipelines, storage tanks and storage tanks prepared from the nonmetallic composite materials are exposed to outdoor environments for a long time, and are affected by the effects of ultraviolet rays, rainwater, soil acid-base corrosion, mechanical impact and the like, so that aging phenomena can occur, the normal service of equipment with long safety period is threatened, and potential safety hazards exist. It is therefore necessary to evaluate the ageing state of the nonmetallic composite.
Currently, the existing common evaluation methods for the aging state of the nonmetallic composite material mainly comprise a visual inspection method, a microscopic surface imaging method, a mechanical property test, a thermal analysis technology test and the like.
The visual detection method is the most direct detection method, but the detection is subjectively influenced by operators, and the detection precision is low; the microscopic surface imaging method observes the microstructure form of the material through a scanning electron microscope, the detection result is visual, but the scanning electron microscope is expensive, the detection process is tedious and lengthy, and the detection requirement (environment) is high; the mechanical property test quantitatively evaluates the tested material by carrying out experiments such as stretching and bending on the material, but damages the tested material, and can not detect the in-service material; thermal analysis technology tests thermal weight loss, curing temperature and expansion coefficient, and the evaluation is accurate and professional, but the materials to be tested are damaged, and the in-service materials cannot be detected. In summary, the above-mentioned existing detection process can damage the material itself in the detection process, and requires expensive experimental equipment, has poor field adaptability, and cannot evaluate the aging state of oil pipelines, storage tanks and storage tanks prepared from the nonmetallic composite material.
The related research results show that the capacitive imaging detection technology has unique advantages for realizing the aging state evaluation of the nonmetallic composite material. The capacitive imaging detection technology utilizes a fringe electric field between two polar plates of a coplanar capacitor to realize detection. Specifically, the discontinuity in dielectric characteristics between the defect and the sample may cause a change in the electric field pattern, thereby changing the output signal. Therefore, the dielectric property of the material is necessarily changed based on the aging of the nonmetallic composite material, and the capacitance detection has the advantages of non-contact, high precision, high sensitivity, single-sided detection and the like, so that the nondestructive evaluation of the aging state of the nonmetallic composite material can be realized.
However, the inventors have further studied and found that existing capacitive detection systems are limited to fixed excitation and receiving electrodes and channels, and can only be designed for a single (spatial) wavelength. In-situ measurement of different ageing depths requires frequent replacement of probes, and rapid, stable and accurate real-time detection of the multi-depth ageing state of the nonmetallic composite material cannot be realized. Therefore, it is necessary to provide equipment which occupies a small volume, has good field detection adaptability, does not need to destroy the original state of the nonmetallic composite material, has good detection stability, and can detect the aging state of the nonmetallic composite material in multiple depths so as to meet the application requirements of practical engineering.
Disclosure of Invention
The invention provides a multi-depth detection device for the aging state of a nonmetallic composite material based on excitation switching, which enables an excitation control module to gate excitation electrodes and combinations of detection electrodes corresponding to different detection depths through switching control signals, and can realize the depth detection of the aging state of the nonmetallic composite material in shallow, medium and deep layers. The detection device has good field adaptability, can realize multi-depth detection under the condition of not changing the probe, is convenient and flexible, is simple and portable, and realizes the ageing state of the non-metal composite material for multi-depth nondestructive detection.
In order to solve the technical problems, the invention adopts the following technical scheme:
non-metal composite material ageing state multi-depth detection device based on excitation switching, including: a sensor unit and an instrument control end; the instrument control end comprises a signal generation module, a signal amplifier, a lock-in amplifier and a switching control and data acquisition module; the sensor unit comprises an excitation electrode, a detection electrode, an excitation control module and a signal primary processing module;
the exciting electrode and the detecting electrode are prepared and formed on the same PCB base plate in a printing and printing mode.
Further preferably, the detection electrode formed on the PCB substrate plate specifically comprises a first detection electrode, a second detection electrode, a third detection electrode and a fourth detection electrode; the first detection electrode, the second detection electrode, the third detection electrode and the fourth detection electrode form a first detection electrode group, and the characteristics of the first detection electrode, the second detection electrode, the third detection electrode and the fourth detection electrode are the same and are sequentially arranged at equal intervals;
the excitation electrodes prepared and formed on the PCB substrate plate are specifically a first excitation electrode, a second excitation electrode, a third excitation electrode, a fourth excitation electrode, a fifth excitation electrode, a sixth excitation electrode and a seventh excitation electrode; the first excitation electrode, the third excitation electrode, the fifth excitation electrode and the seventh excitation electrode form a first excitation electrode group, the second excitation electrode and the sixth excitation electrode form a second excitation electrode group, and the fourth excitation electrode forms a third excitation electrode group;
The first excitation electrode is arranged on the side, away from the second detection electrode, of the first detection electrode, the third excitation electrode is arranged on the side, away from the first detection electrode, of the second detection electrode, the fifth excitation electrode is arranged on the side, away from the fourth detection electrode, of the third detection electrode, and the seventh excitation electrode is arranged on the side, away from the third detection electrode, of the fourth detection electrode; the characteristics of the first excitation electrode, the third excitation electrode, the fifth excitation electrode and the seventh excitation electrode are the same, and the distance between the first excitation electrode and the first detection electrode, the distance between the third excitation electrode and the second detection electrode, the distance between the fifth excitation electrode and the third detection electrode and the distance between the seventh excitation electrode and the fourth detection electrode are all the same;
the second excitation electrode is arranged at the middle position between the first excitation electrode and the third excitation electrode, the sixth excitation electrode is arranged at the middle position between the fifth excitation electrode and the seventh excitation electrode, and the characteristics of the second excitation electrode and the sixth excitation electrode are the same; the fourth excitation electrode is disposed at an intermediate position between the second excitation electrode and the sixth excitation electrode.
Further preferably, the excitation control module is composed of a multiplexing module and an excitation distribution module;
The multiplexing module is composed of a first multiplexer and a second multiplexer; the excitation distribution module is composed of a plurality of excitation distribution voltage followers which are respectively arranged in one-to-one correspondence with each excitation electrode in the first excitation electrode group, the second excitation electrode group and the third excitation electrode group;
the first multiplexer is matched with the excitation distribution module and used for controlling the first excitation electrode group and the second excitation electrode group; the second multiplexer is matched with the excitation distribution module and used for controlling the third excitation electrode group; the first multiplexer and the second multiplexer select a chip with the model number of MUX509 IPWR; a plurality of excitation distribution voltage followers in the excitation distribution module select chips with model LM7332 MAX/NOPB;
the VDD pin of the first multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the first multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the first multiplexer with the chip model of MUX509IPWR is connected with a high level; the A0 pin and the A1 pin of the first multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S3A pin, the S4A pin, the S1B pin, the S2B pin and the S4B pin of the first multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the first multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the first excitation electrode group IN the excitation distribution module; the DB pin of the first multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the second excitation electrode group IN the excitation distribution module;
The VDD pin of the second multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the second multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the second multiplexer with the chip model of MUX509IPWR is connected with high level; the A0 pin and the A1 pin of the second multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S2A pin and the S3A pin of the second multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the second multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the third excitation electrode group IN the excitation distribution module;
the V+ pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with each excitation electrode in the corresponding excitation electrode group.
Further preferably, the signal primary processing module is composed of a transimpedance amplifying module and an adder module; the transimpedance amplifying module is arranged in one-to-one correspondence with each detection electrode in the first detection electrode group and consists of a transimpedance amplifier and a signal primary processing in-phase proportional amplifier; the transimpedance amplifier and the signal primary processing in-phase proportional amplifier are both chips with the model of TLV272IDR, and the adder is a chip with the model of LM7332 MAX/NOPB;
the VDD pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of transimpedance amplifier with chip model TLV272IDR is connected with-5V working voltage; the 2 IN-pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with a corresponding detection electrode IN the first detection electrode group; the 2OUT pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with the 1IN+ pin of the signal primary processing IN-phase proportional amplifier;
the VDD pin of the signal primary processing in-phase proportional amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of signal primary processing in-phase proportional amplifier with chip model TLV272IDR is connected with-5V working voltage; the 1OUT pin of the signal primary processing IN-phase proportional amplifier with the chip model of TLV272IDR is connected with the IN+A pin of the adder module with the chip model of LM7332 MAX/NOPB;
The V+ pin of the adder module with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the adder module with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the adder module with the chip model LM7332MAX/NOPB is connected with the signal input end of the signal amplifier.
Further preferably, the signal generating module is composed of an active crystal oscillator, a frequency divider, a signal generating high-pass filter, a signal generating low-pass filter, a signal generating in-phase proportional amplifier and a signal generating voltage follower; the frequency divider is a chip with the model number of 74HC40D and 653, the signal generation high-pass filter, the signal generation low-pass filter and the signal generation in-phase proportional amplifier are all chips with the model number of TL084IDT, and the signal generation voltage follower is a chip with the model number of TL 082;
the VCC pin of the frequency divider with the chip model of 74 HC40D, 653 is connected with +5V working voltage; the GND pin and the MP pin of the frequency divider with the chip model number of 74 HC40D and 653 are grounded; the CP# pin of the frequency divider with the chip model of 74 HC40D and 653 is connected with the active crystal oscillator;
VCC+ pin of signal generating voltage follower with model TL082 is connected with +5V working voltage; VCC-pin of signal generation voltage follower with chip model TL082 is connected with-5V working voltage; the 1IN+ pin of the signal generation voltage follower with the chip model number TL082 is connected with the output signal end of the frequency divider with the chip model number 74HC40D, 653 through the signal generation high-pass filter, the signal generation low-pass filter and the signal generation IN-phase proportional amplifier; the 2IN+ pin of the signal generation voltage follower with the chip model TL082 is connected with the 1IN+ pin; the 1OUT pin of the signal generating voltage follower with the chip model number TL082 is connected with the S2A pin and the S3B pin of a first multiplexer with the chip model number MUX509IPWR in the multiplexing module, and is connected with the S4B pin of a second multiplexer with the chip model number MUX509IPWR in the multiplexing module; the 2 IN-pin of the signal generation voltage follower with the chip model TL082 is connected with the 2OUT pin; the 2OUT pin of the signal generating voltage follower with the chip model TL082 is connected with the input end of the reference signal module of the lock-in amplifier.
Further preferably, the signal amplifier is composed of a signal amplification first high-pass filter, a signal amplification first low-pass filter, a signal amplification second high-pass filter, a signal amplification first same-phase proportional amplifier and a signal amplification second same-phase proportional amplifier; the signal amplification first high-pass filter, the signal amplification first low-pass filter, the signal amplification second high-pass filter and the signal amplification second in-phase proportional amplifier are all chips with the model of GS8094-SR, and the signal amplification first in-phase proportional amplifier is a chip with the model of TLV271 IDBVR.
Further preferably, the lock-in amplifier is composed of a detection signal processing module, a reference signal processing module, a lock-in amplifying multiplexer and a lock-in amplifying low-pass filter;
the detection signal processing module consists of a detection signal first voltage follower, a detection signal second voltage follower, a detection signal first same-phase proportional amplifier, a detection signal second same-phase proportional amplifier, a detection signal first inverting proportional amplifier and a detection signal second inverting proportional amplifier; the detection signal first voltage follower, the detection signal second voltage follower, the detection signal first in-phase proportional amplifier, the detection signal second in-phase proportional amplifier, the detection signal first anti-phase proportional amplifier and the detection signal second anti-phase proportional amplifier are all chips with model LM7332 MAX/NOPB;
The reference signal processing module comprises a reference signal first same-phase proportional amplifier and a reference signal second same-phase proportional amplifier, wherein the reference signal first voltage comparator is connected behind the reference signal first same-phase proportional amplifier, and the reference signal phase shifter and the reference signal voltage comparator are connected behind the reference signal second same-phase proportional amplifier; the reference signal first in-phase proportional amplifier, the reference signal second in-phase proportional amplifier and the reference signal phase shifter are all chips with model LM7332MAX/NOPB, and the reference signal voltage comparator is a chip with model TL3016 CDR;
the phase-locked amplifying multiplexer selects a chip with the model number of CD74HC4051M 96;
the phase-locked amplifying low-pass filter consists of a phase-locked amplifying first low-pass filter and a phase-locked amplifying second low-pass filter; the phase-locked amplifying first low-pass filter and the phase-locked amplifying second low-pass filter are chips with model TL 082.
Further preferably, the switching control and data acquisition module is composed of a data acquisition card and a PC; the switching control and data acquisition module is connected with two paths of output signals of the lock-in amplifier; the data acquisition card is of the type Altai USB-2884.
The invention provides a multi-depth detection device for the aging state of a nonmetallic composite material based on excitation switching, which comprises a sensor unit and an instrument control end, wherein the sensor unit is connected with the instrument control end; the instrument control end comprises a switching control and data acquisition module, a phase-locked amplifier connected with the switching control and data acquisition module, a signal generation module connected with the phase-locked amplifier and a signal amplifier; the sensor unit comprises an excitation control module connected with the signal generation module, a signal primary processing module connected with the signal amplifier, an excitation electrode connected with the excitation control module and a detection electrode connected with the signal primary processing module; the excitation control module is also in communication connection with the switching control and data acquisition module. According to the excitation switching-based multi-depth detection device for the aging state of the nonmetallic composite material with the structural characteristics, the first detection electrode group and the excitation electrode group can be configured to form three combination forms, so that the depth detection of the aging states of the nonmetallic composite material in the shallow, medium and deep directions is realized in a gating mode of an excitation control module. Compared with the prior art, the scheme has at least the following beneficial effects:
(1) The detection probe is matched with excitation switching to realize multi-depth evaluation, and the aging degree of the nonmetallic composite material can be effectively evaluated from shallow to deep during detection.
(2) The design of switching different excitation electrode groups of a single probe can realize multi-depth detection without changing the probe, and the device is convenient, flexible, simple and portable.
(3) The detection device utilizes the capacitance detection principle to realize nondestructive detection of the aging state of the nonmetallic composite material, and the original structure of the sample to be detected is not required to be damaged.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
FIG. 1 is a schematic structural diagram of a device for detecting the aging state of a nonmetallic composite material in multiple depths based on excitation switching;
FIG. 2 is a schematic diagram of the structure of a PCB substrate, excitation electrodes, and detection electrodes;
FIG. 3a is a schematic circuit diagram of a first multiplexer of the multiplexing module according to the present invention using a chip with a model MUX509 IPWR;
FIG. 3b is a schematic diagram of a second multiplexer of the multiplexing module of the present invention using a chip with a MUX509IPWR type;
FIG. 4 is a schematic circuit diagram of a chip model LM7332MAX/NOPB selected for use by multiple stimulus distribution voltage followers in the stimulus distribution module of the present invention;
FIG. 5 is a schematic circuit diagram of a chip with a model TLV272IDR selected as a transimpedance amplifier in a signal primary processing module according to the present invention;
fig. 6 is a schematic circuit diagram of a signal primary processing in-phase proportional amplifier in the signal primary processing module according to the present invention, wherein the chip is a TLV272 IDR;
FIG. 7 is a schematic circuit diagram of an adder in the signal primary processing module of the present invention using a chip model LM7332 MAX/NOPB;
FIG. 8 is a schematic diagram of a chip with a frequency divider of the signal generating module of the present invention, which is a chip with a model 74 HC40D, 653;
FIG. 9 is a schematic circuit diagram of a chip with model TL082 selected as a signal generating voltage follower in the signal generating module of the invention;
FIG. 10 is a schematic diagram of a detection principle of three-layer depth formed by different excitation electrode groups and detection electrode groups in a non-metal composite aging state multi-depth detection device based on excitation switching;
FIG. 11 is a graph showing the detection depth and the detection signal of the detection of the shallowest aging state in the device for detecting the aging state of the nonmetallic composite material based on excitation switching;
FIG. 12 is a graph showing the detection depth and the detection signal of a device for detecting the medium aging state in a device for detecting the aging state of a nonmetallic composite material based on excitation switching;
fig. 13 is a graph of a detection depth and a detection signal during detection of a deepest aging state in a multi-depth detection device for aging state of a nonmetallic composite material based on excitation switching.
Reference numerals: 101. a first excitation electrode; 102. a first detection electrode; 103. a second excitation electrode; 104. a second detection electrode; 105. a third excitation electrode; 106. a fourth excitation electrode; 107. a fifth excitation electrode; 108. a third detection electrode; 109. a sixth excitation electrode; 110. a fourth detection electrode; 111. a seventh excitation electrode; 112. a PCB base plate.
Detailed Description
The invention provides a multi-depth detection device for the aging state of a nonmetallic composite material based on excitation switching, which enables an excitation control module to gate excitation electrodes and combinations of detection electrodes corresponding to different detection depths through switching control signals, and can realize the depth detection of the aging state of the nonmetallic composite material in shallow, medium and deep layers. The detection device has good field adaptability, can realize multi-depth detection under the condition of not changing the probe, is convenient and flexible, is simple and portable, and realizes the ageing state of the non-metal composite material for multi-depth nondestructive detection.
The invention provides a device for detecting the aging state of a nonmetallic composite material in multiple depths based on excitation switching, which is shown in figure 1 and comprises the following components: a sensor unit and an instrument control end. The instrument control end comprises a signal generation module, a signal amplifier, a phase-locked amplifier and a switching control and data acquisition module. The sensor unit comprises an excitation electrode, a detection electrode, an excitation control module and a signal primary processing module.
Specifically, the exciting electrode and the detecting electrode are prepared and formed on the same PCB substrate board in a printing mode (the electrode materials of the exciting electrode and the detecting electrode are made of copper, and the data input and output ports of the SMA connector are preferably arranged on the exciting electrode and the detecting electrode). As a preferred embodiment of the present invention, as shown in fig. 2, the detection electrodes formed on the PCB substrate 112 are specifically a first detection electrode 102, a second detection electrode 104, a third detection electrode 108, and a fourth detection electrode 110; the first detection electrode 102, the second detection electrode 104, the third detection electrode 108, and the fourth detection electrode 110 form a first detection electrode group, and the first detection electrode 102, the second detection electrode 104, the third detection electrode 108, and the fourth detection electrode 110 are identical in characteristic and are sequentially arranged at equal intervals. The excitation electrodes prepared and formed on the PCB substrate board 112 are specifically a first excitation electrode 101, a second excitation electrode 103, a third excitation electrode 105, a fourth excitation electrode 106, a fifth excitation electrode 107, a sixth excitation electrode 109 and a seventh excitation electrode 111; the first excitation electrode 101, the third excitation electrode 105, the fifth excitation electrode 107, and the seventh excitation electrode 111 form a first excitation electrode group, the second excitation electrode 103 and the sixth excitation electrode 109 form a second excitation electrode group, and the fourth excitation electrode 106 forms a third excitation electrode group.
It should be noted that, based on the above-configured (first, second, and third) excitation electrode groups and first detection electrode groups, three detection combinations can be formed in the process of realizing the aging depth detection of the nonmetallic composite material, so as to satisfy the depth detection of the nonmetallic composite material in shallow, medium and deep three layers. It should be noted that, specific configuration parameters of each excitation electrode group and detection electrode in the (first, second, and third) excitation electrode groups and the first detection electrode groups may be described as follows:
as shown in fig. 2, the excitation electrodes and the detection electrodes are rectangular, and the first detection electrode 102, the second detection electrode 104, the third detection electrode 108, and the fourth detection electrode 110 in the first detection electrode group are identical in characteristic and are sequentially arranged at equal intervals, and the dimensions are referred to as a length of 75mm and a width of 4mm. The dimensions of the first excitation electrode 101, the third excitation electrode 105, the fifth excitation electrode 107, and the seventh excitation electrode 111 in the first excitation electrode group are referred to as: the electrode length was 75mm and the width was 4mm. The dimensions of the second excitation electrode 103 and the sixth excitation electrode 109 in the second excitation electrode group are referred to as: the electrode length was 75mm and the width was 14mm. The fourth excitation electrode 106 in the third excitation electrode group has dimensions referenced as: the electrode length was 75mm and the width was 24mm.
Further, the first excitation electrode 101 is disposed on a side of the first detection electrode 102 away from the second detection electrode 104, the third excitation electrode 105 is disposed on a side of the second detection electrode 104 away from the first detection electrode 102, the fifth excitation electrode 107 is disposed on a side of the third detection electrode 108 away from the fourth detection electrode 110, and the seventh excitation electrode 111 is disposed on a side of the fourth detection electrode 110 away from the third detection electrode 108; the characteristics of the first excitation electrode 101, the third excitation electrode 105, the fifth excitation electrode 107 and the seventh excitation electrode 111 are the same, and the distance between the first excitation electrode 101 and the first detection electrode 102, the distance between the third excitation electrode 105 and the second detection electrode 104, the distance between the fifth excitation electrode 107 and the third detection electrode 108, and the distance between the seventh excitation electrode 111 and the fourth detection electrode 110 are all the same.
The second excitation electrode 103 is disposed at an intermediate position between the first excitation electrode 101 and the third excitation electrode 105, the sixth excitation electrode 109 is disposed at an intermediate position between the fifth excitation electrode 107 and the seventh excitation electrode 111, and the characteristics of the second excitation electrode 103 and the sixth excitation electrode 109 are the same; the fourth excitation electrode 106 is disposed at an intermediate position between the second excitation electrode 103 and the sixth excitation electrode 109.
In addition, as a preferred embodiment of the present invention, the excitation control module is composed of a multiplexing module and an excitation distribution module. The multiplexing module is composed of a first multiplexer and a second multiplexer; the excitation distribution module is composed of a plurality of excitation distribution voltage followers which are respectively arranged in one-to-one correspondence with each excitation electrode in the first excitation electrode group, the second excitation electrode group and the third excitation electrode group.
The first multiplexer is matched with the excitation distribution module and used for controlling the first excitation electrode group and the second excitation electrode group; the second multiplexer is matched with the excitation distribution module and used for controlling the third excitation electrode group. As shown in fig. 3a and 3b, the first multiplexer and the second multiplexer select a chip with a model of MUX509IPWR (the first multiplexer and the second multiplexer share a control signal, wherein the first multiplexer specifically controls the first excitation electrode group and the second excitation electrode group, and the second multiplexer specifically controls the third excitation electrode group); as shown in FIG. 4, a plurality of stimulus distribution voltage followers in the stimulus distribution module are selected from the chips with model LM7332 MAX/NOPB.
The VDD pin of the first multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the first multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the first multiplexer with the chip model of MUX509IPWR is connected with a high level; the A0 pin and the A1 pin of the first multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S3A pin, the S4A pin, the S1B pin, the S2B pin and the S4B pin of the first multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the first multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the first excitation electrode group IN the excitation distribution module; the DB pin of the first multiplexer of the chip model MUX509IPWR is connected with the IN+A terminal of the excitation distribution voltage follower corresponding to the second excitation electrode group IN the excitation distribution module.
The VDD pin of the second multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the second multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the second multiplexer with the chip model of MUX509IPWR is connected with high level; the A0 pin and the A1 pin of the second multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S2A pin and the S3A pin of the second multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the second multiplexer of the chip model MUX509IPWR is connected with the IN+A terminal of the excitation distribution voltage follower corresponding to the third excitation electrode group IN the excitation distribution module.
The V+ pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with each excitation electrode in the corresponding excitation electrode group.
As a preferred embodiment of the present invention, the signal primary processing module is composed of a transimpedance amplifying module and an adder module. Further, the transimpedance amplifying module is arranged in one-to-one correspondence with each detection electrode in the first detection electrode group and is composed of a transimpedance amplifier and a signal primary processing in-phase proportional amplifier. As shown in fig. 5 and 6, the transimpedance amplifier and the signal primary processing in-phase proportional amplifier are all chips with the model of TLV272 IDR; as shown in FIG. 7, the adder is a chip of model LM7332 MAX/NOPB.
The VDD pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of transimpedance amplifier with chip model TLV272IDR is connected with-5V working voltage; the 2 IN-pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with a corresponding detection electrode IN the first detection electrode group; the 2OUT pin of the transimpedance amplifier with the chip type of TLV272IDR is connected with the 1IN+ pin of the signal primary processing IN-phase proportional amplifier.
The VDD pin of the signal primary processing in-phase proportional amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of signal primary processing in-phase proportional amplifier with chip model TLV272IDR is connected with-5V working voltage; the 1OUT pin of the primary signal processing IN-phase proportional amplifier with the chip type TLV272IDR is connected with the IN+A pin of the adder module with the chip type LM7332 MAX/NOPB.
The V+ pin of the adder module with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the adder module with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the adder module with the chip model LM7332MAX/NOPB is connected with the signal input end of the signal amplifier.
In addition, the electrical components in the control end of the apparatus are further illustrated as follows. For example: the switching control and data acquisition module is connected with two paths of signals of the phase-locked amplifier (one path of signals of the phase-locked amplifier are reference signals provided by the signal generation module, and the other path of signals of the phase-locked amplifier come from a receiving end of the detection electrode and are amplified by the signal amplifier to obtain a processed detection signal); and the switching control and data acquisition module is also used for providing a two-bit digital control signal for the excitation control module. Therefore, the switching control and data acquisition module can be formed by an Altai USB-2884 data acquisition card and PC equipment.
In addition, as a preferable implementation mode of the invention, the signal generating module in the instrument control end consists of an active crystal oscillator, a frequency divider, a signal generating high-pass filter, a signal generating low-pass filter, a signal generating in-phase proportional amplifier and a signal generating voltage follower; as shown in fig. 8, the frequency divider is a chip with the model of 74hc40d, 653; the signal generation high-pass filter, the signal generation low-pass filter and the signal generation in-phase proportional amplifier are all chips with model number TL084 IDT; as shown in fig. 9, the signal generating voltage follower is a chip of model TL 082.
The VCC pin of the frequency divider with the chip model of 74 HC40D, 653 is connected with +5V working voltage; the GND pin and the MP pin of the frequency divider with the chip model number of 74 HC40D and 653 are grounded; the cp# pin of the frequency divider with chip model 74hc40 d,653 is connected to the active crystal oscillator.
VCC+ pin of signal generating voltage follower with model TL082 is connected with +5V working voltage; VCC-pin of signal generation voltage follower with chip model TL082 is connected with-5V working voltage; the 1IN+ pin of the signal generation voltage follower with the chip model number TL082 is connected with the output signal end of the frequency divider with the chip model number 74HC40D, 653 through the signal generation high-pass filter, the signal generation low-pass filter and the signal generation IN-phase proportional amplifier; the 2IN+ pin of the signal generation voltage follower with the chip model TL082 is connected with the 1IN+ pin; the 1OUT pin of the signal generating voltage follower with the chip model number TL082 is connected with the S2A pin and the S3B pin of a first multiplexer with the chip model number MUX509IPWR in the multiplexing module, and is connected with the S4B pin of a second multiplexer with the chip model number MUX509IPWR in the multiplexing module; the 2 IN-pin of the signal generation voltage follower with the chip model TL082 is connected with the 2OUT pin; the 2OUT pin of the signal generating voltage follower with the chip model TL082 is connected with the input end of the reference signal module of the lock-in amplifier.
In a preferred embodiment of the present invention, the signal amplifier in the instrument control terminal is composed of a signal amplification first high-pass filter, a signal amplification first low-pass filter, a signal amplification second high-pass filter, a signal amplification first in-phase proportional amplifier and a signal amplification second in-phase proportional amplifier. The signal amplification first high-pass filter, the signal amplification first low-pass filter, the signal amplification second high-pass filter and the signal amplification second in-phase proportional amplifier are all chips with the model of GS8094-SR, and the signal amplification first in-phase proportional amplifier is a chip with the model of TLV271 IDBVR.
And, as a preferred embodiment of the present invention, the lock-in amplifier in the instrument control end is composed of a detection signal processing module, a reference signal processing module, a lock-in amplifying multiplexer and a lock-in amplifying low-pass filter.
The detection signal processing module consists of a detection signal first voltage follower, a detection signal second voltage follower, a detection signal first same-phase proportional amplifier, a detection signal second same-phase proportional amplifier, a detection signal first inverting proportional amplifier and a detection signal second inverting proportional amplifier; the detection signal first voltage follower, the detection signal second voltage follower, the detection signal first in-phase proportional amplifier, the detection signal second in-phase proportional amplifier, the detection signal first anti-phase proportional amplifier and the detection signal second anti-phase proportional amplifier are all chips with model LM7332 MAX/NOPB.
The reference signal processing module comprises a reference signal first same-phase proportional amplifier and a reference signal second same-phase proportional amplifier, wherein the reference signal first voltage comparator is connected behind the reference signal first same-phase proportional amplifier, and the reference signal phase shifter and the reference signal voltage comparator are connected behind the reference signal second same-phase proportional amplifier; the reference signal first in-phase proportional amplifier, the reference signal second in-phase proportional amplifier and the reference signal phase shifter are all chips with model LM7332MAX/NOPB, and the reference signal voltage comparator is a chip with model TL3016 CDR.
The lock-in amplifying multiplexer selects a chip with the model number of CD74HC4051M 96.
The phase-locked amplifying low-pass filter consists of a phase-locked amplifying first low-pass filter and a phase-locked amplifying second low-pass filter; the phase-locked amplifying first low-pass filter and the phase-locked amplifying second low-pass filter are chips with model TL 082.
In order to facilitate understanding of the scheme by those skilled in the art, the working process of the device for detecting the aging state of the nonmetallic composite material in multiple depths based on excitation switching provided by the invention is further explained by referring to the accompanying drawings as follows:
for example, the signal generating module provides sinusoidal alternating current signals with the frequency of 100KHz and the amplitude of 3V, the signal generating module is connected with the excitation control module, the switching control and data acquisition module outputs digital signals to the multiplexing module to gate different excitation electrode groups, the excitation distribution module ensures that signals output by the multiplexer are stable and reliable, and the excitation control module is connected with the excitation electrodes. The detection electrode amplifies the detected signals through a transimpedance amplification module in the signal primary processing module and then carries out weighted summation through an adder module, and the signals are transmitted to an instrument control end; after the signal is amplified again by the signal amplifier, the phase-locked amplifier extracts the needed useful information, and finally the useful information is collected into the (upper) PC by the data collection card in the switching control and data collection module.
In the process, the multi-depth detection of the aging state of the nonmetallic composite material is specifically realized by switching the control and data acquisition module to send a two-bit digital control signal to the excitation control module, so that the three excitation electrode groups are switched for use, and the multi-depth detection function is realized. In either transmission mode, the corresponding receiving electrode is fixed. In order to avoid the influence of other excitation electrodes on the detection electrodes, in the detection process of aging states at different depths, sinusoidal excitation signals are applied to corresponding excitation electrode groups, and the other excitation electrode groups are grounded and shielded, so that electric field interference between the corresponding electrodes is reduced.
It should be noted that, the aging state detection of the nonmetallic composite material is based on the detection of dielectric characteristics, and the dielectric characteristics of the aging material and the non-aging material are different, so the detection of the aging state of the material is realized by using the capacitance detection principle. Since the dielectric constant of the uniform High Density Polyethylene (HDPE) is greater than that of air, the embodiment can be theoretically completed by replacing the aging material, so that the embodiment adopts the uniform High Density Polyethylene (HDPE) to replace the aging material, and adopts a mode of gradually thickening the test block to simulate the increase of the aging detection depth.
In the detection process, the sensor and the tested material test block are arranged in a mode shown in fig. 10, the tested nonmetallic composite material test block is uniform High Density Polyethylene (HDPE), the size and the size of the sensor are the same, the thickness is 1mm, and the number is a plurality of. The gradual increase of the thickness of the object to be detected is simulated by gradually thickening the test block, and because the dielectric constant of the HDPE test block is larger than that of air, the measured capacitance value can be increased along with the increase of the thickness of the test block in the effective detection depth of the sensor theoretically, and the capacitance value corresponding to the output of the system should be increased.
The switching control and data acquisition module sends a two-bit digital control signal to the excitation control module to control the first excitation electrode group and the first detection electrode group to form the shallowest detection depth, test blocks are added layer by layer, and each test block is added to record a data value obtained by the detection device. As shown in fig. 11, the capacitance value measured by the detection device is small from 1mm thickness to 6mm thickness, which means that the sensitivity of the detection device is gradually reduced with the increase of the detection depth, and the shallowest detection depth mode is sensitive to the aging state of the nonmetallic composite material within 6mm depth and is insensitive to the aging state of the material outside 6mm depth.
The switching control and data acquisition module sends a two-bit digital control signal to the excitation control module to control the second excitation electrode group and the first detection electrode group to form a medium detection depth, test blocks are added layer by layer, and each time one test block is added, the data value obtained by the detection device is recorded. As shown in fig. 12, the capacitance value measured by the detection device is small from 1mm thickness to 15mm thickness, which means that the sensitivity of the detection device is gradually reduced with the increase of the detection depth, and that the medium detection depth mode is sensitive to the aging state of the nonmetallic composite material within 15mm depth and is insensitive to the aging state of the material beyond 15mm depth.
The switching control and data acquisition module sends a two-bit digital control signal to the excitation control module to control the third excitation electrode group and the first detection electrode group to form the deepest detection depth, test blocks are added layer by layer, and each test block is added to record a data value obtained by the detection device. As shown in fig. 13, the capacitance value measured by the detection device is small from 1mm thickness to 24mm thickness, which means that the sensitivity of the detection device is gradually reduced with the increase of the detection depth, and the deepest detection depth mode is sensitive to the aging state of the nonmetallic composite material within 24mm depth and is insensitive to the aging state of the material beyond 24mm depth.
The device for detecting the aging state multiple depths of the nonmetallic composite material based on excitation switching provided by the invention has the advantages that the first detection electrode group, the first excitation electrode group, the second excitation electrode group and the third excitation electrode group are configured to form three combination forms, and the depth detection of the aging states of the nonmetallic composite material is realized in a gating mode of an excitation control module.
The invention provides a multi-depth detection device for the aging state of a nonmetallic composite material based on excitation switching, which comprises a sensor unit and an instrument control end, wherein the sensor unit is connected with the instrument control end; the instrument control end comprises a switching control and data acquisition module, a phase-locked amplifier connected with the switching control and data acquisition module, a signal generation module connected with the phase-locked amplifier and a signal amplifier; the sensor unit comprises an excitation control module connected with the signal generation module, a signal primary processing module connected with the signal amplifier, an excitation electrode connected with the excitation control module and a detection electrode connected with the signal primary processing module; the excitation control module is also in communication connection with the switching control and data acquisition module. According to the excitation switching-based multi-depth detection device for the aging state of the nonmetallic composite material with the structural characteristics, the first detection electrode group and the excitation electrode group can be configured to form three combination forms, so that the depth detection of the aging states of the nonmetallic composite material in the shallow, medium and deep directions is realized in a gating mode of an excitation control module. Compared with the prior art, the scheme has at least the following beneficial effects:
(1) The detection probe is matched with excitation switching to realize multi-depth evaluation, and the aging degree of the nonmetallic composite material can be effectively evaluated from shallow to deep during detection.
(2) The design of switching different excitation electrode groups of a single probe can realize multi-depth detection without changing the probe, and the device is convenient, flexible, simple and portable.
(3) The detection device utilizes the capacitance detection principle to realize nondestructive detection of the aging state of the nonmetallic composite material, and the original structure of the sample to be detected is not required to be damaged.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. Non-metal composite material ageing state multi-depth detection device based on excitation switching, which is characterized by comprising: a sensor unit and an instrument control end; the instrument control end comprises a signal generation module, a signal amplifier, a lock-in amplifier and a switching control and data acquisition module; the sensor unit comprises an excitation electrode, a detection electrode, an excitation control module and a signal primary processing module;
The excitation electrode and the detection electrode are prepared and formed on the same PCB substrate board in a printing and printing mode;
the detection electrode formed on the PCB substrate plate specifically comprises a first detection electrode, a second detection electrode, a third detection electrode and a fourth detection electrode; the first detection electrode, the second detection electrode, the third detection electrode and the fourth detection electrode form a first detection electrode group, and the characteristics of the first detection electrode, the second detection electrode, the third detection electrode and the fourth detection electrode are the same and are sequentially arranged at equal intervals;
the excitation electrodes prepared and formed on the PCB substrate plate are specifically a first excitation electrode, a second excitation electrode, a third excitation electrode, a fourth excitation electrode, a fifth excitation electrode, a sixth excitation electrode and a seventh excitation electrode; the first excitation electrode, the third excitation electrode, the fifth excitation electrode and the seventh excitation electrode form a first excitation electrode group, the second excitation electrode and the sixth excitation electrode form a second excitation electrode group, and the fourth excitation electrode forms a third excitation electrode group;
the first excitation electrode is arranged on the side, away from the second detection electrode, of the first detection electrode, the third excitation electrode is arranged on the side, away from the first detection electrode, of the second detection electrode, the fifth excitation electrode is arranged on the side, away from the fourth detection electrode, of the third detection electrode, and the seventh excitation electrode is arranged on the side, away from the third detection electrode, of the fourth detection electrode; the characteristics of the first excitation electrode, the third excitation electrode, the fifth excitation electrode and the seventh excitation electrode are the same, and the distance between the first excitation electrode and the first detection electrode, the distance between the third excitation electrode and the second detection electrode, the distance between the fifth excitation electrode and the third detection electrode and the distance between the seventh excitation electrode and the fourth detection electrode are all the same;
The second excitation electrode is arranged at the middle position between the first excitation electrode and the third excitation electrode, the sixth excitation electrode is arranged at the middle position between the fifth excitation electrode and the seventh excitation electrode, and the characteristics of the second excitation electrode and the sixth excitation electrode are the same; the fourth excitation electrode is disposed at an intermediate position between the second excitation electrode and the sixth excitation electrode.
2. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite materials according to claim 1, wherein the excitation control module is composed of a multiplexing module and an excitation distribution module;
the multiplexing module is composed of a first multiplexer and a second multiplexer; the excitation distribution module is composed of a plurality of excitation distribution voltage followers which are respectively arranged in one-to-one correspondence with each excitation electrode in the first excitation electrode group, the second excitation electrode group and the third excitation electrode group;
the first multiplexer is matched with the excitation distribution module and used for controlling the first excitation electrode group and the second excitation electrode group; the second multiplexer is matched with the excitation distribution module and used for controlling the third excitation electrode group; the first multiplexer and the second multiplexer select a chip with the model number of MUX509 IPWR; a plurality of excitation distribution voltage followers in the excitation distribution module select chips with model LM7332 MAX/NOPB;
The VDD pin of the first multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the first multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the first multiplexer with the chip model of MUX509IPWR is connected with a high level; the A0 pin and the A1 pin of the first multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S3A pin, the S4A pin, the S1B pin, the S2B pin and the S4B pin of the first multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the first multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the first excitation electrode group IN the excitation distribution module; the DB pin of the first multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the second excitation electrode group IN the excitation distribution module;
the VDD pin of the second multiplexer with the chip model of MUX509IPWR is connected with +5V working voltage; the VSS pin of the second multiplexer with the chip model of MUX509IPWR is connected with the working voltage of-5V; the EN pin of the second multiplexer with the chip model of MUX509IPWR is connected with high level; the A0 pin and the A1 pin of the second multiplexer with the chip model of MUX509IPWR are connected with the digital control signal output end of the switching control and data acquisition module, and the A0 pin and the A1 pin are connected with a pull-down resistor; the GND pin, the S1A pin, the S2A pin and the S3A pin of the second multiplexer with the chip model of MUX509IPWR are grounded; the DA pin of the second multiplexer with the chip model of MUX509IPWR is connected with the IN+A end of the excitation distribution voltage follower corresponding to the third excitation electrode group IN the excitation distribution module;
The V+ pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the excitation distribution voltage follower with the chip model LM7332MAX/NOPB is connected with each excitation electrode in the corresponding excitation electrode group.
3. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite material according to claim 1, wherein the signal primary processing module is composed of a transimpedance amplifying module and an adder module; the transimpedance amplifying module is arranged in one-to-one correspondence with each detection electrode in the first detection electrode group and consists of a transimpedance amplifier and a signal primary processing in-phase proportional amplifier; the transimpedance amplifier and the signal primary processing in-phase proportional amplifier are both chips with the model of TLV272IDR, and the adder is a chip with the model of LM7332 MAX/NOPB;
the VDD pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of transimpedance amplifier with chip model TLV272IDR is connected with-5V working voltage; the 2 IN-pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with a corresponding detection electrode IN the first detection electrode group; the 2OUT pin of the transimpedance amplifier with the chip model of TLV272IDR is connected with the 1IN+ pin of the signal primary processing IN-phase proportional amplifier;
The VDD pin of the signal primary processing in-phase proportional amplifier with the chip model of TLV272IDR is connected with +5V working voltage; GND pin of signal primary processing in-phase proportional amplifier with chip model TLV272IDR is connected with-5V working voltage; the 1OUT pin of the signal primary processing IN-phase proportional amplifier with the chip model of TLV272IDR is connected with the IN+A pin of the adder module with the chip model of LM7332 MAX/NOPB;
the V+ pin of the adder module with the chip model LM7332MAX/NOPB is connected with +5V working voltage; the V-pin of the adder module with the chip model LM7332MAX/NOPB is connected with the working voltage of-5V; the OUTA pin of the adder module with the chip model LM7332MAX/NOPB is connected with the signal input end of the signal amplifier.
4. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite materials according to claim 1, wherein the signal generation module is composed of an active crystal oscillator, a frequency divider, a signal generation high-pass filter, a signal generation low-pass filter, a signal generation in-phase proportional amplifier and a signal generation voltage follower; the frequency divider is a chip with the model number of 74HC40D and 653, the signal generation high-pass filter, the signal generation low-pass filter and the signal generation in-phase proportional amplifier are all chips with the model number of TL084IDT, and the signal generation voltage follower is a chip with the model number of TL 082;
The VCC pin of the frequency divider with the chip model of 74 HC40D, 653 is connected with +5V working voltage; the GND pin and the MP pin of the frequency divider with the chip model number of 74 HC40D and 653 are grounded; the CP# pin of the frequency divider with the chip model of 74 HC40D and 653 is connected with the active crystal oscillator;
VCC+ pin of signal generating voltage follower with model TL082 is connected with +5V working voltage; VCC-pin of signal generation voltage follower with chip model TL082 is connected with-5V working voltage; the 1IN+ pin of the signal generation voltage follower with the chip model number TL082 is connected with the output signal end of the frequency divider with the chip model number 74HC40D, 653 through the signal generation high-pass filter, the signal generation low-pass filter and the signal generation IN-phase proportional amplifier; the 2IN+ pin of the signal generation voltage follower with the chip model TL082 is connected with the 1IN+ pin; the 1OUT pin of the signal generating voltage follower with the chip model number TL082 is connected with the S2A pin and the S3B pin of a first multiplexer with the chip model number MUX509IPWR in the multiplexing module, and is connected with the S4B pin of a second multiplexer with the chip model number MUX509IPWR in the multiplexing module; the 2 IN-pin of the signal generation voltage follower with the chip model TL082 is connected with the 2OUT pin; the 2OUT pin of the signal generating voltage follower with the chip model TL082 is connected with the input end of the reference signal module of the lock-in amplifier.
5. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite materials according to claim 1, wherein the signal amplifier is composed of a signal amplification first high-pass filter, a signal amplification first low-pass filter, a signal amplification second high-pass filter, a signal amplification first in-phase proportional amplifier and a signal amplification second in-phase proportional amplifier; the signal amplification first high-pass filter, the signal amplification first low-pass filter, the signal amplification second high-pass filter and the signal amplification second in-phase proportional amplifier are all chips with the model of GS8094-SR, and the signal amplification first in-phase proportional amplifier is a chip with the model of TLV271 IDBVR.
6. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite material according to claim 1, wherein the lock-in amplifier is composed of a detection signal processing module, a reference signal processing module, a lock-in amplifying multiplexer and a lock-in amplifying low-pass filter;
the detection signal processing module consists of a detection signal first voltage follower, a detection signal second voltage follower, a detection signal first same-phase proportional amplifier, a detection signal second same-phase proportional amplifier, a detection signal first inverting proportional amplifier and a detection signal second inverting proportional amplifier; the detection signal first voltage follower, the detection signal second voltage follower, the detection signal first in-phase proportional amplifier, the detection signal second in-phase proportional amplifier, the detection signal first anti-phase proportional amplifier and the detection signal second anti-phase proportional amplifier are all chips with model LM7332 MAX/NOPB;
The reference signal processing module comprises a reference signal first same-phase proportional amplifier and a reference signal second same-phase proportional amplifier, wherein the reference signal first voltage comparator is connected behind the reference signal first same-phase proportional amplifier, and the reference signal phase shifter and the reference signal voltage comparator are connected behind the reference signal second same-phase proportional amplifier; the reference signal first in-phase proportional amplifier, the reference signal second in-phase proportional amplifier and the reference signal phase shifter are all chips with model LM7332MAX/NOPB, and the reference signal voltage comparator is a chip with model TL3016 CDR;
the phase-locked amplifying multiplexer selects a chip with the model number of CD74HC4051M 96;
the phase-locked amplifying low-pass filter consists of a phase-locked amplifying first low-pass filter and a phase-locked amplifying second low-pass filter; the phase-locked amplifying first low-pass filter and the phase-locked amplifying second low-pass filter are chips with model TL 082.
7. The excitation switching-based multi-depth detection device for aging state of nonmetallic composite materials according to claim 1, wherein the switching control and data acquisition module consists of a data acquisition card and a PC; the switching control and data acquisition module is connected with two paths of output signals of the lock-in amplifier; the data acquisition card is of the type Altai USB-2884.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692433A (en) * | 2012-06-12 | 2012-09-26 | 中北大学 | Flexible combination type electric capacitance tomography data obtaining system for sensor electrode |
| EP3166228A1 (en) * | 2015-11-05 | 2017-05-10 | Karlsruher Institut für Technologie | Sensor module, sensor system and method for capacitive and spatially resolved detection of approaching and contact, use of the sensor module |
| CN110279416A (en) * | 2019-05-20 | 2019-09-27 | 南京航空航天大学 | A kind of portable impedance imaging system and its working method based on FPGA |
| CN111879723A (en) * | 2020-07-15 | 2020-11-03 | 山东省科学院自动化研究所 | Rubber material aging state discrimination system and method based on terahertz dielectric spectrum |
| CN214122085U (en) * | 2020-11-17 | 2021-09-03 | 中国民航大学 | Composite material defect detection device based on capacitive imaging technology |
| CN114002278A (en) * | 2021-10-25 | 2022-02-01 | 辽宁石油化工大学 | Honeycomb structure planar capacitive sensor and imaging detection method and device for thin-layer object |
| CN114660134A (en) * | 2022-05-17 | 2022-06-24 | 中国石油大学(华东) | Nonmetallic material aging detection device and method based on interdigital capacitive sensor |
| CN115629110A (en) * | 2022-12-21 | 2023-01-20 | 中国石油大学(华东) | Inductance-capacitance double-end nondestructive testing device under single-ended signal excitation |
-
2023
- 2023-04-18 CN CN202310415774.XA patent/CN116124844B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692433A (en) * | 2012-06-12 | 2012-09-26 | 中北大学 | Flexible combination type electric capacitance tomography data obtaining system for sensor electrode |
| EP3166228A1 (en) * | 2015-11-05 | 2017-05-10 | Karlsruher Institut für Technologie | Sensor module, sensor system and method for capacitive and spatially resolved detection of approaching and contact, use of the sensor module |
| CN110279416A (en) * | 2019-05-20 | 2019-09-27 | 南京航空航天大学 | A kind of portable impedance imaging system and its working method based on FPGA |
| CN111879723A (en) * | 2020-07-15 | 2020-11-03 | 山东省科学院自动化研究所 | Rubber material aging state discrimination system and method based on terahertz dielectric spectrum |
| CN214122085U (en) * | 2020-11-17 | 2021-09-03 | 中国民航大学 | Composite material defect detection device based on capacitive imaging technology |
| CN114002278A (en) * | 2021-10-25 | 2022-02-01 | 辽宁石油化工大学 | Honeycomb structure planar capacitive sensor and imaging detection method and device for thin-layer object |
| CN114660134A (en) * | 2022-05-17 | 2022-06-24 | 中国石油大学(华东) | Nonmetallic material aging detection device and method based on interdigital capacitive sensor |
| CN115629110A (en) * | 2022-12-21 | 2023-01-20 | 中国石油大学(华东) | Inductance-capacitance double-end nondestructive testing device under single-ended signal excitation |
Non-Patent Citations (1)
| Title |
|---|
| 王安泉等: "阵列探头电容成像玻璃钢无损检测系统", 电子测量技术, vol. 44, no. 4, pages 149 - 154 * |
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|---|---|
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