CN116124017B - Method and device for measuring film thickness, electronic equipment and storage medium - Google Patents
Method and device for measuring film thickness, electronic equipment and storage medium Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000003860 storage Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 577
- 238000005259 measurement Methods 0.000 claims abstract description 144
- 239000010409 thin film Substances 0.000 claims abstract description 57
- 238000004088 simulation Methods 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 230000010287 polarization Effects 0.000 claims abstract description 15
- 238000001228 spectrum Methods 0.000 claims abstract description 14
- 238000004590 computer program Methods 0.000 claims description 26
- 238000012937 correction Methods 0.000 claims description 7
- 238000000691 measurement method Methods 0.000 claims description 5
- 238000012876 topography Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 7
- 230000000877 morphologic effect Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000000572 ellipsometry Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000011478 gradient descent method Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001874 polarisation spectroscopy Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000002922 simulated annealing Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Abstract
The application is applicable to the technical field of film manufacturing, and provides a method and a device for measuring film thickness, electronic equipment and a storage medium, wherein the method comprises the following steps: obtaining the film thickness relative ratio of the thin film; correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured; constructing a model of the film layer to be detected according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model; respectively collecting elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured; fitting is carried out according to the simulation data information and the theoretical data information to obtain the accurate thickness of each measurement point of the film to be measured, so that the problem that the measurement result of the film thickness of each film of the film is not accurate enough is solved.
Description
Technical Field
The application belongs to the technical field of film manufacturing, and particularly relates to a method and a device for measuring film thickness, electronic equipment and a storage medium.
Background
Ellipsometry is a surface sensitive, non-destructive, non-invasive optical technique that is widely used for thin layers and surface features. The elliptical polarization spectrum can be based on the change of polarization state of linearly polarized light after being reflected by the film sample, and the film thickness of the film sample can be obtained through measurement, modeling and fitting.
In the conventional method for measuring the film thickness of a film, a plurality of points on the film to be measured are generally regarded as independent. When the film thickness of the thin film is measured, measuring and modeling are firstly carried out on each point position of the thin film, then fitting is carried out on each point position, and finally the thickness of each point position is obtained. However, in constructing a complex multi-film model equation, there may be a mutual coupling relationship between film thicknesses of each film layer, which results in a multi-solution situation of the model equation, so that multiple sets of film thicknesses are fitted for each point location, and finally, the measurement result of the film thicknesses of each film layer is not accurate enough.
Disclosure of Invention
The embodiment of the application provides a method, a device, electronic equipment and a storage medium for measuring film thickness, which can solve the problem that the film thickness measurement results of all film layers are inaccurate due to the fact that the mutual coupling relationship possibly exists between the film thicknesses of all film layers of a multi-film is ignored.
In a first aspect, an embodiment of the present application provides a method for measuring a film thickness of a thin film, including:
obtaining a film thickness relative ratio of a film, wherein the film thickness relative ratio is used for indicating the morphological characteristics of each film layer of the film, and the number of the film layers of the film is more than 1;
correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, wherein the number of the measurement points is greater than or equal to 1;
constructing a model of the film layer to be detected according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model;
respectively collecting elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
fitting is carried out according to the simulation data information and the theoretical data information, and the accurate thickness of each measurement point position of the film to be measured is obtained.
Optionally, before the obtaining the film thickness relative ratio of the thin film, the method further includes:
determining the relative thickness ratio of the film according to the ratio of the film thickness of each measurement point position of a preselected film layer to a reference film thickness, wherein the preselected film layer is a standard film sample only comprising one film layer, and the reference film thickness is the film thickness of any measurement point position of the preselected film layer;
And generating a shape constraint library of the film according to the positions of the measurement points of the preselected film layer and the film thickness relative ratio of the film.
Optionally, the obtaining the film thickness relative ratio of the thin film includes:
and reading the film thickness relative ratio of the film from the morphology constraint library of the film according to the positions of the measurement points of the film to be measured.
Optionally, after the generating the morphology constraint library of the thin film according to the positions of the measurement points of the pre-selected film layer and the film thickness relative ratio of the thin film, the method further includes:
acquiring the rotation angle of the preselected film layer;
and updating the shape constraint library of the film according to the rotation angle to obtain an updated shape constraint library.
Optionally, after updating the morphology constraint library of the film according to the rotation angle to obtain an updated morphology constraint library, the method further includes:
and interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
Optionally, after interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library, the method further includes:
and reading the current film thickness relative ratio of the film to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film to be measured.
Optionally, the correcting the initial film thickness of each measurement point of the film to be measured according to the film thickness relative ratio to obtain the corrected film thickness of each measurement point of the film to be measured includes:
and correcting the initial film thickness of each measurement point of the film to be measured according to the relative ratio of the current film thickness to obtain the corrected film thickness of each measurement point of the film to be measured.
In a second aspect, an embodiment of the present application provides a measurement apparatus for thin film thickness, including:
the ratio acquisition module is used for acquiring the film thickness relative ratio of the film, wherein the film thickness relative ratio is used for indicating the morphological characteristics of each film layer of the film, and the number of the film layers of the film is more than 1;
the film thickness correction module is used for correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, and the number of the measurement points is greater than or equal to 1;
the simulation data generation module is used for constructing a model of the film layer to be tested according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model;
The theoretical data generation module is used for respectively acquiring elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
and the accurate film thickness generation module is used for fitting according to the simulation data information and the theoretical data information to obtain the accurate thickness of each measurement point of the film to be measured.
Optionally, the device for measuring film thickness of the thin film further comprises:
the ratio determining module is used for determining the relative ratio of the film thickness of the film according to the ratio of the film thickness of each measuring point of a preselected film layer to the reference film thickness, wherein the preselected film layer is a standard film sample only containing one film layer, and the reference film thickness is the film thickness of any measuring point of the preselected film layer;
the morphology constraint library generation module is used for generating a morphology constraint library of the film according to the positions of all measurement points of the preselected film layer and the film thickness relative ratio of the film.
Optionally, the ratio obtaining module includes:
and the ratio reading unit is used for reading the film thickness relative ratio of the film from the film morphology constraint library according to the positions of the measurement points of the film to be measured.
Optionally, the device for measuring film thickness of the thin film further comprises:
the angle acquisition module is used for acquiring the rotation angle of the preselected film layer;
and the morphology constraint library updating module is used for updating the morphology constraint library of the film according to the rotation angle to obtain an updated morphology constraint library.
Optionally, the device for measuring film thickness of the thin film further comprises:
and the interpolation module is used for interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
Optionally, the device for measuring film thickness of the thin film further comprises:
and the ratio reading module is used for reading the current film thickness relative ratio of the film layer to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film layer to be measured.
Optionally, the film thickness correction module includes:
and the film thickness correction unit is used for correcting the initial film thickness of each measurement point of the film to be measured according to the current film thickness relative ratio to obtain the corrected film thickness of each measurement point of the film to be measured.
In a third aspect, an embodiment of the present application provides an electronic device, including:
a memory, a processor, and a computer program stored in the memory and executable on the processor, which when executed by the processor, implements the steps of the thin film thickness measurement method of the first aspect described above.
In a fourth aspect, embodiments of the present application provide a computer-readable storage medium, comprising: the computer-readable storage medium stores a computer program which, when executed by a processor, implements the steps of the thin film thickness measurement method according to the first aspect.
In a fifth aspect, embodiments of the present application provide a computer program product, which when run on an electronic device, causes the electronic device to perform the steps of the method for measuring film thickness according to the first aspect.
Compared with the prior art, the embodiment of the application has the beneficial effects that: when the film thickness of the film to be measured is calculated, the initial film thickness of each measurement point of the film to be measured is corrected according to the film thickness relative ratio of the film, and the film thickness relative ratio of the film is used for indicating the appearance characteristics of each film of the film, so that the appearance characteristics of the film, namely the relevance among the films, are fully considered when the film thickness of the film to be measured is measured, the accuracy of the film thickness measurement result of each film can be improved, and the problem that the film thickness measurement result of each film is not accurate enough due to the fact that the film thicknesses of each film of the multi-film are ignored can be solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required for the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for measuring film thickness according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural view of a measuring apparatus for film thickness of a thin film according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system configurations, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
As used in this specification and the appended claims, the term "if" may be interpreted as "when..once" or "in response to a determination" or "in response to detection" depending on the context. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
In addition, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
Elliptical polarization spectroscopy is a good multilayer thin film thickness measurement technique. Obtaining the thickness of a film by ellipsometric spectroscopy techniques is typically accomplished by three steps:
1. measuring to obtain theoretical data information of the film
The measurement principle of ellipsometry involves the reflection of elliptically polarized light at the surface of a material. To characterize the reflected light, the elliptical polarization spectrum can be split into two components: the P and S polarization states, the P component refers to linearly polarized light parallel to the plane of incidence and the S component refers to linearly polarized light perpendicular to the plane of incidence. In most cases, a plurality of interfaces exist, when light is incident on the interfaces of the film samples, the reflected light is reflected and transmitted for a plurality of times, the polarization state of the reflected light is changed, the ellipsometry spectrum of the film samples is detected through an analyzer, and the ellipsometry spectrum can be represented by an amplitude ratio angle ψ and a phase difference angle delta, so that theoretical data information of the corresponding film samples is obtained. Typically, ψ and Δ will be converted into theoretical data information as shown in equation (1), which can be represented by three parameters N, C and S:
N＝cos2Ψ
C=sin2 ψcosΔ formula (1)
S＝sin2ΨsinΔ。
2. Modeling, obtaining simulation data information of a model obtained by modeling
Ellipsometry is an indirect measurement technique, i.e., the measured ψ and Δ cannot be directly converted into the optical constants of thin film samples, and usually requires modeling for analysis. Wherein, the construction of the model needs to pay attention to two points: a. the optical constant (such as refractive index n, dielectric constant k) and estimated thickness of each layer of material; b. in the correct stacking order. After the model is constructed, the values of psi and delta corresponding to the model are calculated according to the Fresnel equation, and finally the values are converted into the simulation data information of the model, wherein the simulation data information is represented by three parameters of N, C and S.
3. Fitting to obtain the thickness of the film
The final thickness parameter results are fitted by optimizing, e.g., gradient descent, the optical constants and thickness parameters in the model to minimize the theoretical N, C, S and simulated N, C, S differences.
In the practical complex specific film manufacturing process, especially the stacking of multiple repeated film layers, the process of specific materials is generally kept unchanged, and specific morphology can be formed between the repeated film layers. Thus, the thickness of each spot on each film is not independent, but rather has a relationship to the specific topography that is formed between the repeating film layers. In the embodiment of the application, all the points on the whole film layer are taken as a whole, after the shape constraint is added to each layer of the film, modeling is carried out to obtain the simulation data information of the model, and finally the simulation data information and the theoretical data information are fitted to obtain the accurate film thickness measurement result of the film layer.
Fig. 1 shows a flow chart of a method for measuring film thickness of a thin film according to an embodiment of the present application, as shown in fig. 1, the method includes steps S110 to S150, and the specific implementation principle of each step is as follows:
s110, obtaining a film thickness relative ratio of the thin films, wherein the film thickness relative ratio is used for indicating the appearance characteristics of each film layer of the thin films, and the number of the film layers of the thin films is larger than 1.
In some embodiments, since the process of the specific material is generally kept unchanged, the film thickness relative ratio of each film of the multiple layer repeating film is substantially the same, a standard film having only one film layer may be taken as a sample of the film, the film thickness relative ratio of the standard film sample is taken as the film thickness relative ratio of each film of the multiple layer repeating film, and the topographical features of each film layer of the multiple layer repeating film are indicated by the film thickness relative ratio.
S120, correcting initial film thicknesses of all measurement points of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thicknesses of all measurement points of the film layer to be measured, wherein the number of the measurement points is greater than or equal to 1.
In some embodiments, a film thickness relative ratio r of the multilayer repeating film is obtained i Thereafter, the formula z can be used i ’＝z i *r i Obtaining the corrected film thickness z of each measurement point of the film layer to be measured of the multilayer repeated film i ’。
At least 1 measurement point is arranged in the film layer to be measured, so that the number of the measurement points is greater than or equal to 1.
Wherein z is i The initial film thickness of the ith measurement point of the film to be measured is i, which is an integer greater than or equal to 0.
Wherein, the film to be measured is measured, modeled and fitted, and the initial film thickness z of each measurement point in the film to be measured can be obtained i 。
And S130, constructing a model of the film to be measured according to the corrected film thickness and the optical constant of the thin film, and calculating simulation data information corresponding to the model.
In some embodiments, a model of the film to be measured may be constructed according to the corrected film thickness of the film to be measured and the optical constant of the thin film obtained in step S120.
Wherein the optical constant of the film is related to the material of the film, and the optical constant of the film includes a refractive index n and a dielectric constant k.
After the model of the film layer to be measured is constructed, calculating according to a Fresnel equation to obtain the corresponding psi and delta corresponding to the model, and finally converting the psi and delta into the simulation data information of the model according to a formula 1, wherein the simulation data information uses N i ’、C i ' and S i ' three parameters are represented.
S140, respectively collecting elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured.
In some embodiments, the analyzer detects the elliptical polarization spectrum of each measurement point of the film to be measured, so as to obtain theoretical data information of the film to be measured.
Where the elliptical polarization spectrum is represented by an amplitude ratio angle ψ and a phase difference angle Δ, both ψ and Δ can be converted into theoretical data information as shown in equation (1), which can be represented by three parameters of N, C and S.
And S150, fitting according to the simulation data information and the theoretical data information to obtain the accurate thickness of each measurement point of the film to be measured.
In some embodiments, according to the theoretical data information and the analog data information of the film to be measured, the optical constants and the thickness parameters z in the model of the film to be measured are continuously changed by an optimization method i R i Let the simulation data information N of the ith measurement point i ’、C i ’、S i Theoretical data information N of' and ith measurement point i 、C i 、S i The difference value is the smallest, and finally the thickness parameter z in the model of the film to be measured is used i R i And obtaining the accurate film thickness of each measurement point of the film to be measured.
The optimization method may include, but is not limited to, gradient descent method, newton method, simulated annealing method, genetic algorithm, etc.
It should be understood that, in the steps S110 to S150, when calculating the film thickness of the film to be measured, the initial film thickness of each measurement point of the film to be measured is corrected according to the film thickness relative ratio of the film, and the film thickness relative ratio of the film is used to indicate the morphological feature of each film of the film, so that the morphological feature of the film, that is, the relevance between the films, is fully considered when measuring the film thickness of the film to be measured, and thus, the accuracy of the film thickness measurement result of each film can be improved.
In some embodiments, based on the embodiment of the method for measuring film thickness of thin film shown in fig. 1, after the obtaining the film thickness relative ratio of thin film in step S110, the method may further include the following steps, where the specific implementation principle of each step is as follows:
and step 1, determining the film thickness relative ratio of the film according to the ratio of the film thickness of each measurement point of a preselected film layer to the reference film thickness, wherein the preselected film layer is a standard film sample only comprising one film layer.
In some embodiments, a standard film having only one film layer may be used as a film sample, and the film thickness relative ratio is the ratio of the film thickness at each measurement point in the standard film sample to the reference film thickness.
And measuring, modeling and fitting the standard film sample to obtain the film thickness of each measuring point in the standard film sample.
After the film thickness of each measuring point in the standard film sample is obtained, the film thickness relative ratio of the multilayer repeated films can be obtained according to the ratio of the film thickness of each measuring point to the reference film thickness.
Wherein if z i In order to obtain the film thickness of the i-th measurement point of the standard thin film sample, i is an integer greater than or equal to 0, the measurement point of the center position of the standard thin film sample may be referred to as the 0-th measurement point, and of course, other measurement points such as the measurement point of the upper left corner and the measurement point of the upper right corner of the standard thin film sample may be referred to as the 0-th measurement point, and the embodiment of the present invention is not limited as long as the other measurement points may be sequentially numbered according to the 0-th measurement point.
The reference film thickness may be the film thickness at any one measurement point of the standard thin film sample.
In the embodiment of the application, the film thickness z at the center position of the standard film sample 0 As the reference film thickness, the film thickness relative ratio r of the ith measurement point i ＝z i /z 0 。
And 2, generating a shape constraint library of the film according to the positions of the measurement points of the preselected film layer and the film thickness relative ratio of the film.
In some embodiments, the topography constraint library L (x) of the multilayer repetitive film is obtained according to the positions of the measurement points of the standard film sample and the relative ratio of the film thickness of the measurement points to the reference film thickness i ，y i ，r i )。
Wherein x is i ，y i Is the ithPosition coordinates of the measurement points, r i The film thickness relative ratio of the ith measurement point, r i Film thickness z equal to the i-th measurement point i And a reference film thickness z 0 Is a relative ratio of (2).
It should be noted that, the morphology constraint library is not a database in a general sense, but only represents a mapping relationship between a position of each measurement point of the standard film sample and a film thickness relative ratio stored in the morphology constraint library, where the mapping relationship may be stored in a database table or a file, and in which manner, the embodiment of the present application is not limited.
It should be understood that, in the step 1 and the step 2, the film thickness relative ratio of the thin film of the same material is basically fixed, so that the film thickness relative ratio of each measurement point is only calculated once, and when the thickness of each film layer of the thin film of the same material is measured subsequently, the film thickness relative ratio of each measurement point is only read from the shape constraint library, thereby saving the measurement time.
In some embodiments, based on the embodiment of the method for measuring film thickness of thin film shown in fig. 1, the step S110 of obtaining the film thickness relative ratio of the thin film may include the following steps, where the specific implementation principle of each step is as follows:
and 11, reading the film thickness relative ratio of the film from the film morphology constraint library according to the positions of the measurement points of the film to be measured.
In some embodiments, because the mapping relation between the positions of the measurement points and the film thickness relative ratio of the film is stored in the shape constraint library of the film, after the positions of the measurement points of the film layer to be measured are obtained, the film thickness relative ratio corresponding to the positions of the measurement points can be read from the shape constraint library of the film.
It should be understood that in the step 11, the film thickness relative ratio of the film can be directly read from the shape constraint library of the film, and the film thickness relative ratio of each measurement point is not required to be calculated again, so that the measurement time can be saved.
In some embodiments, based on the embodiment of the method for measuring film thickness of thin film shown in fig. 1, after generating the morphology constraint library of the thin film according to the positions of the measurement points of the pre-selected film layer and the film thickness relative ratio of the thin film in step S110, the method may further include the following steps, where the specific implementation principle of each step is as follows:
And step 21, acquiring the rotation angle of the preselected film layer.
And step 22, updating the shape constraint library of the film according to the rotation angle to obtain an updated shape constraint library.
In some embodiments, for each layer of the multiple repeating film, a rotation θ operation may be involved, where the pattern of the layer changes rotationally. Therefore, the rotation angle of the rotating film layer can be obtained.
In the embodiment of the application, the rotation angle of the standard film sample can be obtained, and the shape constraint library of the film can be updated according to the rotation angle.
Wherein, the updated morphology constraint library can be L (x i ，y i ，r i θ,) or L' (x) i ’，y i ’，r i (ii) representation.
Assuming that the sample rotates counter-clockwise by θ, x' =x cos (θ) -y sin (θ); y' =x×sin (θ) +y×cos (θ).
In some embodiments, based on the embodiment of the method for measuring film thickness of thin film shown in fig. 1, after step 22 updates the topography constraint library of the multi-layer repeated thin film according to the rotation angle to obtain an updated topography constraint library, the method may further include the following steps, where the specific implementation principle of each step is as follows:
and step 31, interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
Since (x ', y ') after rotation may not be at the original measurement point, in order to more accurately obtain the film thickness relative ratio of the rotating layer at the original measurement point, L ' (x) i ’，y i ' ri,) to obtain L "(x) i ，y i ，r i ’)，r i ' is the film thickness relative ratio of the ith measurement point after the rotation angle θ.
Two-dimensional curved surface interpolation square pair L' (x) can be adopted i ’，y i ', ri,) to interpolate.
By reacting L' (x) i ’，y i ’，r i (ii) interpolation, the three-dimensional scatter coordinates can be interpolated (x) i ’，y i ’，r i ) Interpolate the measurement point (x i ，y i ) Corresponding r i ’。
The two-dimensional curved surface interpolation method includes, but is not limited to, a linear method, a nearest neighbor method, a spline interpolation method and the like.
It should be appreciated that in the above steps, the relative change of the film thickness relative ratio caused by rotation of the single film layer is taken into consideration, and the calculated film thickness relative ratio is more accurate, so that the film thickness of the film layer obtained by subsequent measurement is more accurate.
In some embodiments, based on the embodiment of the method for measuring a film thickness of a thin film shown in fig. 1, after interpolating the updated morphology constraint library in step 31 to obtain an interpolated morphology constraint library, the method may further include the following steps, where a specific implementation principle of each step is as follows:
And step 41, reading the current film thickness relative ratio of the film to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film to be measured.
Step S120 of correcting the initial film thickness of each measurement point of the film to be measured according to the film thickness relative ratio to obtain corrected film thicknesses of each measurement point of the film to be measured, may include the steps of:
and step 51, correcting the initial film thickness of each measurement point of the film to be measured according to the current film thickness relative ratio to obtain the corrected film thickness of each measurement point of the film to be measured.
It should be understood that, in the steps 41 and 51, the initial film thickness of each measurement point of the film to be measured may be corrected according to the current film thickness relative ratio of the film to be measured read in the profile constraint library after interpolation, and the accuracy is higher because the accuracy of the current film thickness relative ratio is higher than that of the film thickness relative ratio, so that the accuracy of correcting the film thickness of each measurement point of the film to be measured is higher.
Corresponding to the method for measuring film thickness shown in fig. 1, fig. 2 shows a device M100 for measuring film thickness according to an embodiment of the present application, including:
The ratio acquisition module M110 is used for acquiring a film thickness relative ratio of the thin film, wherein the film thickness relative ratio is used for indicating the morphological characteristics of each film layer of the thin film, and the number of the film layers of the thin film is greater than 1;
the film thickness correction module M120 is used for correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, and the number of the measurement points is greater than or equal to 1;
the simulation data generation module M130 is used for constructing a model of the film layer to be tested according to the corrected film thickness and the optical constant of the thin film, and calculating simulation data information corresponding to the model;
the theoretical data generation module M140 is used for respectively acquiring elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
and the accurate film thickness generation module M150 is used for fitting according to the simulation data information and the theoretical data information to obtain the accurate thickness of each measurement point of the film to be measured.
Optionally, the apparatus M100 for measuring a film thickness of a thin film further includes:
the ratio determining module is used for determining the relative thickness ratio of the film according to the ratio of the film thickness of each measuring point of a preselected film layer to the reference film thickness, wherein the preselected film layer is a standard film sample only containing one film layer, and the reference film thickness is the film thickness of any measuring point of the preselected film layer;
The morphology constraint library generation module is used for generating a morphology constraint library of the film according to the positions of all measurement points of the preselected film layer and the film thickness relative ratio of the film.
Optionally, the ratio obtaining module M110 includes:
and the ratio reading unit is used for reading the film thickness relative ratio of the film from the film morphology constraint library according to the positions of the measurement points of the film to be measured.
Optionally, the apparatus M100 for measuring a film thickness of a thin film further includes:
the angle acquisition module is used for acquiring the rotation angle of the preselected film layer;
and the morphology constraint library updating module is used for updating the morphology constraint library of the film according to the rotation angle to obtain an updated morphology constraint library.
Optionally, the apparatus M100 for measuring a film thickness of a thin film further includes:
and the interpolation module is used for interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
Optionally, the apparatus M100 for measuring a film thickness of a thin film further includes:
and the ratio reading module is used for reading the current film thickness relative ratio of the film layer to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film layer to be measured.
Optionally, the film thickness correction module M120 includes:
and the film thickness correction unit is used for correcting the initial film thickness of each measurement point of the film to be measured according to the current film thickness relative ratio to obtain the corrected film thickness of each measurement point of the film to be measured.
It will be appreciated that various implementations and combinations of implementations and advantageous effects thereof in the above embodiments are equally applicable to this embodiment, and will not be described here again.
Fig. 3 is a schematic structural diagram of an electronic device according to an embodiment of the present application. As shown in fig. 3, the electronic device D10 of this embodiment includes: at least one processor D100 (only one is shown in fig. 3), a memory D101 and a computer program D102 stored in the memory D101 and executable on the at least one processor D100, the processor D100 implementing the steps in any of the various method embodiments described above when executing the computer program D102. Alternatively, the processor D100 may perform the functions of the modules/units in the above-described device embodiments, such as the functions of the modules M110 to M140 shown in fig. 2, when executing the computer program D102.
In some embodiments, the processor D100, when executing the computer program D102, implements the following steps:
Obtaining a film thickness relative ratio of a film, wherein the film thickness relative ratio is used for indicating the morphological characteristics of each film layer of the film, and the number of the film layers of the film is more than 1;
correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, wherein the number of the measurement points is greater than or equal to 1;
constructing a model of the film layer to be detected according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model;
respectively collecting elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
fitting is carried out according to the simulation data information and the theoretical data information, and the accurate thickness of each measurement point position of the film to be measured is obtained.
Preferably, the processor D100 executes the computer program D102, and before implementing the obtained film thickness relative ratio of the thin film, the following steps may be further executed:
determining the relative thickness ratio of the film according to the ratio of the film thickness of each measurement point position of a preselected film layer to a reference film thickness, wherein the preselected film layer is a standard film sample only comprising one film layer, and the reference film thickness is the film thickness of any measurement point position of the preselected film layer;
And generating a shape constraint library of the film according to the positions of the measurement points of the preselected film layer and the film thickness relative ratio of the film.
Preferably, when the processor D100 executes the computer program D102 to obtain the film thickness relative ratio of the thin film, the method may include the following steps:
and reading the film thickness relative ratio of the film from the morphology constraint library of the film according to the positions of the measurement points of the film to be measured.
Preferably, after the processor D100 executes the computer program D102 to generate the profile constraint library of the thin film according to the positions of the measurement points of the pre-selected film layer and the film thickness relative ratio of the thin film, the following steps may be further performed:
acquiring the rotation angle of the preselected film layer;
and updating the shape constraint library of the film according to the rotation angle to obtain an updated shape constraint library.
Optionally, after the processor D100 executes the computer program D102 to update the profile constraint library of the film according to the rotation angle, the following steps may be further performed:
and interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
Optionally, after the processor D100 executes the computer program D102 to interpolate the updated morphology constraint library to obtain an interpolated morphology constraint library, the following steps may be further executed:
and reading the current film thickness relative ratio of the film to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film to be measured.
Optionally, when the processor D100 executes the computer program D102 to correct the initial film thickness of each measurement point of the film to be measured according to the film thickness relative ratio to obtain the corrected film thickness of each measurement point of the film to be measured, the following steps may be executed:
and correcting the initial film thickness of each measurement point of the film to be measured according to the relative ratio of the current film thickness to obtain the corrected film thickness of each measurement point of the film to be measured.
The electronic device D10 may be a computing device such as a desktop computer, a notebook computer, a palm computer, a cloud server, etc. The electronic device may include, but is not limited to, a processor D100, a memory D101. It will be appreciated by those skilled in the art that fig. 3 is merely an example of the electronic device D10 and is not meant to be limiting of the electronic device D10, and may include more or fewer components than shown, or may combine certain components, or different components, such as may also include input-output devices, network access devices, etc.
The processor D100 may be a central processing unit (Central Processing Unit, CPU), the processor D100 may also be other general purpose processors, digital signal processors (Digital Signal Processor, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), off-the-shelf programmable gate arrays (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory D101 may in some embodiments be an internal storage unit of the electronic device D10, such as a hard disk or a memory of the electronic device D10. The memory D101 may also be an external storage device of the electronic device D10 in other embodiments, for example, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash Card (Flash Card) or the like, which are provided on the electronic device D10. Further, the memory D101 may also include both an internal storage unit and an external storage device of the electronic device D10. The memory D101 is used for storing an operating system, an application program, a boot loader (BootLoader), data, other programs, etc., such as program codes of the computer program. The memory D101 may also be used to temporarily store data that has been output or is to be output.
It should be noted that, because the content of information interaction and execution process between the above devices/units is based on the same concept as the method embodiment of the present application, specific functions and technical effects thereof may be referred to in the method embodiment section, and will not be described herein again.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional units and modules is illustrated, and in practical application, the above-described functional distribution may be performed by different functional units and modules according to needs, i.e. the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-described functions. The functional units and modules in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit, where the integrated units may be implemented in a form of hardware or a form of a software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working process of the units and modules in the above system may refer to the corresponding process in the foregoing method embodiment, which is not described herein again.
Embodiments of the present application also provide a computer readable storage medium storing a computer program, which when executed by a processor, may implement the steps in the above-described method embodiments.
Embodiments of the present application provide a computer program product which, when run on an electronic device, causes the electronic device to perform the steps of the method embodiments described above.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the present application implements all or part of the flow of the method of the above embodiments, and may be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, where the computer program, when executed by a processor, may implement the steps of each of the method embodiments described above. Wherein the computer program comprises computer program code which may be in source code form, object code form, executable file or some intermediate form etc. The computer readable medium may include at least: any entity or device capable of carrying computer program code to a photographing device/terminal apparatus, recording medium, computer Memory, read-Only Memory (ROM), random access Memory (Random Access Memory, RAM), electrical carrier signals, telecommunications signals, and software distribution media. Such as a U-disk, removable hard disk, magnetic or optical disk, etc. In some jurisdictions, computer readable media may not be electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/network device and method may be implemented in other manners. For example, the apparatus/network device embodiments described above are merely illustrative, e.g., the division of the modules or units is merely a logical functional division, and there may be additional divisions in actual implementation, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection via interfaces, devices or units, which may be in electrical, mechanical or other forms.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (8)
1. A method for measuring film thickness of a thin film, comprising:
determining the film thickness relative ratio of the film according to the ratio of the film thickness of each measurement point position of a preselected film layer to a reference film thickness, wherein the preselected film layer is a standard film sample only comprising one film layer, and the reference film thickness is the film thickness of any measurement point position of the preselected film layer;
Generating a shape constraint library of the film according to the positions of all measurement points of the preselected film layer and the film thickness relative ratio of the film;
reading the film thickness relative ratio of the film from a shape constraint library of the film according to the positions of all measurement points of the film to be measured, wherein the film thickness relative ratio is used for indicating the shape characteristics of each film of the film, and the number of the film layers of the film is more than 1;
correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, wherein the number of the measurement points is greater than or equal to 1;
constructing a model of the film layer to be detected according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model;
respectively collecting elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
fitting is carried out according to the simulation data information and the theoretical data information, and the accurate thickness of each measurement point position of the film to be measured is obtained.
2. The method for measuring film thickness according to claim 1, further comprising, after said generating a library of topography constraints for said film from the positions of the measurement points of said preselected film layer and the film thickness relative ratio values of said film:
Acquiring the rotation angle of the preselected film layer;
and updating the shape constraint library of the film according to the rotation angle to obtain an updated shape constraint library.
3. The method according to claim 2, further comprising, after said updating the profile constraint library of the thin film according to the rotation angle, obtaining an updated profile constraint library:
and interpolating the updated morphology constraint library to obtain an interpolated morphology constraint library.
4. The method for measuring film thickness according to claim 3, further comprising, after interpolating the updated profile constraint library to obtain an interpolated profile constraint library:
and reading the current film thickness relative ratio of the film to be measured from the interpolated morphology constraint library according to the positions of the measurement points of the film to be measured.
5. The method for measuring film thickness according to claim 4, wherein said correcting initial film thickness of each measurement point of said film layer to be measured according to said film thickness relative ratio to obtain corrected film thickness of each measurement point of said film layer to be measured comprises:
correcting initial films of all measurement points of the film layer to be measured according to the relative ratio of the current film thickness
And obtaining the corrected film thickness of each measurement point of the film to be measured.
6. A thin film thickness measuring device is characterized by comprising:
the ratio determining module is used for determining the relative ratio of the film thickness of the film according to the ratio of the film thickness of each measuring point of a preselected film layer to the reference film thickness, wherein the preselected film layer is a standard film sample only containing one film layer, and the reference film thickness is the film thickness of any measuring point of the preselected film layer;
the morphology constraint library generation module is used for generating a morphology constraint library of the film according to the positions of all measurement points of the preselected film layer and the film thickness relative ratio of the film;
the ratio acquisition module is used for reading the film thickness relative ratio of the film from the film morphology constraint library according to the positions of all measurement points of the film to be measured, wherein the film thickness relative ratio is used for indicating the morphology characteristics of each film of the film, and the number of the film layers of the film is more than 1;
the film thickness correction module is used for correcting the initial film thickness of each measurement point of the film layer to be measured of the film according to the film thickness relative ratio to obtain corrected film thickness of each measurement point of the film layer to be measured, and the number of the measurement points is greater than or equal to 1;
The simulation data generation module is used for constructing a model of the film layer to be tested according to the corrected film thickness and the optical constant of the film, and calculating simulation data information corresponding to the model;
the theoretical data generation module is used for respectively acquiring elliptical polarization spectrums aiming at each measurement point of the film to be measured to obtain theoretical data information of the film to be measured;
and the accurate film thickness generation module is used for fitting according to the simulation data information and the theoretical data information to obtain the accurate thickness of each measurement point of the film to be measured.
7. An electronic device comprising a memory, a processor and a computer program stored in the memory and capable of running on the processor, characterized in that the processor implements the method for measuring film thickness of a thin film according to any one of claims 1 to 5 when executing the computer program.
8. A computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the thin film thickness measurement method according to any one of claims 1 to 5.
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