CN116110889A - Multi-layer overlay mark and preparation method thereof - Google Patents
Multi-layer overlay mark and preparation method thereof Download PDFInfo
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- CN116110889A CN116110889A CN202310046585.XA CN202310046585A CN116110889A CN 116110889 A CN116110889 A CN 116110889A CN 202310046585 A CN202310046585 A CN 202310046585A CN 116110889 A CN116110889 A CN 116110889A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Abstract
According to the multi-layer overlay mark and the preparation method thereof, only the interlayer alignment precision between the interlayer overlay mark and the bottom overlay mark is measured, the first test precision between the top test overlay mark and the bottom overlay mark is measured, or the second test precision between the top test overlay mark and the interlayer overlay mark is measured. And then obtaining the compensation precision corresponding to the top overlay mark according to the first test precision and the interlayer alignment precision or according to the second test precision and the interlayer alignment precision. The process of obtaining the top alignment precision corresponding to the top alignment mark is simple and accurate, and the performance of the finally prepared semiconductor structure is effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a multi-layer overlay mark and a preparation method thereof.
Background
In modern integrated circuit manufacturing processes, devices with different functions are manufactured together, and good connection alignment accuracy is required between the devices, while the manufacturing process of the modern integrated circuit manufacturing processes usually uses multiple photolithography processes to form multiple layers of devices with different functions. The photoetching alignment precision is an important detection standard for whether the photoetching process is successful or not and is used for representing the degree of the overlapping of two photoetching layers.
In the photolithography process, the interlayer alignment precision refers to an overlay measurement error between two layers, and is obtained by measuring offset values between two measurement marks respectively located in two-layer structures. For a semiconductor structure with only two layers, the alignment accuracy can be obtained by measuring the offset values between the measurement marks of the two layers. However, for more than three semiconductor structures, it is very difficult to obtain alignment accuracy by measurement.
Specifically, it is assumed that the semiconductor structure has a three-layer structure including a bottom structure layer, an intermediate structure layer, and a top structure layer in this order from bottom to top. The corresponding alignment accuracy includes: the alignment accuracy of the middle structure layer relative to the bottom structure layer, the alignment accuracy of the top structure layer relative to the bottom structure layer, and the alignment accuracy of the top structure layer relative to the bottom structure layer.
In order to ensure the alignment accuracy of the three-layer structure, the alignment accuracy needs to meet the design requirement. The middle structure layer is aligned with the bottom structure layer between the single layers, so that the alignment accuracy is simple. However, the alignment of the top structural layer to the middle structural layer and the top structural layer to the bottom structural layer between the layers is difficult to satisfy alignment accuracy. In the prior art, the alignment precision of the top structural layer is usually obtained by measuring the alignment precision of the top structural layer relative to the middle structural layer and the alignment precision of the top structural layer relative to the bottom structural layer. However, the above method for obtaining the alignment accuracy of the top structure layer is too complicated, and it is required to measure the alignment accuracy of the top structure layer relative to the middle structure layer and the alignment accuracy of the top structure layer relative to the bottom structure layer at the same time.
Disclosure of Invention
The invention aims to provide a multilayer overlay mark and a preparation method thereof, which are used for solving the problem that a method for obtaining the alignment precision of a top layer structure in the prior art is too complicated.
In order to solve the technical problems, the invention provides a preparation method of a multilayer overlay mark, which comprises the following steps:
providing a substrate;
sequentially forming a laminated bottom overlay mark, an interlayer overlay mark and a top test overlay mark on the substrate;
measuring the interlayer alignment precision of the interlayer alignment mark relative to the bottom alignment mark, measuring the first test alignment precision of the top test alignment mark relative to the bottom alignment mark, or measuring the second test alignment precision of the top test alignment mark relative to the interlayer alignment mark;
acquiring first compensation precision corresponding to the top alignment mark according to the interlayer alignment precision and the first test alignment precision, or acquiring second compensation precision corresponding to the top alignment mark according to the interlayer alignment precision and the second test alignment precision;
and removing the top test overlay mark, and forming a top overlay mark on the interlayer overlay mark according to the first compensation precision or the second compensation precision.
Optionally, the method for obtaining the first compensation precision includes:
calculating according to formula c1= (b1+b1-A1) ×x% to obtain the first compensation accuracy;
wherein, C1 represents a first compensation precision, B1 represents a first test alignment precision, A1 represents the interlayer alignment precision, and X% represents a first side weight ratio of a top overlay mark relative to a bottom overlay mark and the interlayer overlay mark.
Optionally, the range of X% is: 0% -100%.
Optionally, the method for obtaining the second compensation accuracy includes:
calculating according to formula c2= (b2+b2+a1) ×y% to obtain the second compensation accuracy;
wherein, C2 represents a second compensation precision, B2 represents a second test alignment precision, A1 represents the interlayer alignment precision, and Y% represents a second side weight ratio of the top overlay mark relative to the bottom overlay mark and the interlayer overlay mark.
Optionally, the range of Y% is: 0% -100%.
Optionally, the method for obtaining the interlayer alignment precision includes:
establishing a coordinate system, and projecting center points of the interlayer overlay mark and the bottom overlay mark into the coordinate system;
and acquiring a first offset value of the central point of the interlayer alignment mark relative to the central point of the bottom alignment mark, and recording the first offset value as the interlayer alignment precision.
Optionally, the method for obtaining the first test alignment precision includes:
establishing a coordinate system, and projecting center points of the top test overlay mark and the bottom overlay mark into the coordinate system;
and acquiring a second offset value of the central point of the top test overlay mark relative to the central point of the bottom overlay mark, and recording the second offset value as the first test alignment precision.
Optionally, the method for obtaining the second test alignment precision includes:
establishing a coordinate system, and projecting center points of the top test overlay mark and the interlayer overlay mark into the coordinate system;
and acquiring a third offset value of the central point of the top test overlay mark relative to the central point of the interlayer overlay mark, and recording the third offset value as a second test alignment precision.
Optionally, the method for forming the top overlay mark on the interlayer overlay mark includes:
forming a top overlay mark material layer on the interlayer overlay mark;
providing a mask plate, aligning the mask plate to the bottom overlay mark or the interlayer overlay mark, and executing a photoetching process by taking the mask plate as a mask to form the top overlay mark layer;
wherein the first alignment precision of the mask plate relative to the bottom overlay mark is obtained according to a first set coordinate parameter and the first compensation precision or the second compensation precision when the top test overlay mark is prepared by taking the bottom overlay mark as a reference, or,
and the second alignment precision of the mask plate relative to the interlayer alignment mark is obtained according to the second set parameter and the first compensation precision or the second compensation precision when the top test alignment mark is prepared by taking the interlayer alignment mark as a reference.
In order to solve the above problems, the present invention further provides a multilayer overlay mark, which is prepared according to the method for preparing the multilayer overlay mark as described in any one of the above.
According to the inter-layer overlay mark and the preparation method thereof, only the interlayer alignment precision between the inter-layer overlay mark and the bottom overlay mark is measured, the first test precision between the top test overlay mark and the bottom overlay mark is measured, or the second test precision between the top test overlay mark and the inter-layer overlay mark is measured. And then obtaining the compensation precision corresponding to the top overlay mark according to the first test precision and the interlayer alignment precision or according to the second test precision and the interlayer alignment precision. The process of obtaining the top alignment precision corresponding to the top alignment mark is simple and accurate, so that the performance of the finally prepared semiconductor structure is improved.
Drawings
FIG. 1 is a flow chart of a method for producing an inter-layer overlay mark according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a multi-layer overlay mark with a top test overlay mark according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a multi-layer overlay mark with another top test overlay mark according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a multilayer overlay mark in an embodiment of the invention.
Wherein, the reference numerals are as follows:
1-bottom overlay marking;
2-middle overlay mark;
3-top overlay marking; 30-top test overlay mark;
a1-bottom alignment accuracy;
b1-first test alignment accuracy;
b2-second testing alignment accuracy;
b1' -first alignment accuracy;
b2' -second alignment accuracy;
c1-first compensation accuracy;
and C2-second compensation accuracy.
Detailed Description
The present invention provides a multilayer overlay mark and a method for manufacturing the same, which are described in further detail below with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
FIG. 1 is a flow chart of a method for producing an inter-layer overlay mark according to an embodiment of the present invention; FIG. 2 is a schematic diagram of a multi-layer overlay mark with a top test overlay mark according to an embodiment of the invention; FIG. 3 is a schematic diagram of a multi-layer overlay mark with another top test overlay mark according to an embodiment of the invention; FIG. 4 is a schematic diagram of a multilayer overlay mark in an embodiment of the invention.
The multi-layer overlay mark and the method of manufacturing the same in this embodiment are described in detail below with reference to fig. 1 to 4. The method for preparing the inter-multilayer overlay mark in the embodiment includes the following steps S10 to S50.
In step S10, as shown in fig. 2, a substrate is provided.
In this embodiment, the substrate may include a semiconductor material, an insulating material, a conductor material, or any combination thereof, and may have a single-layer structure or a multi-layer structure. Thus, the substrate may be a semiconductor material such as Si, siGe, siGeC, siC, gaAs, inAs, inP and other III/V or II/VI compound semiconductors. Layered substrates such as, for example, si/SiGe, si/SiC, silicon-on-insulator (SOI), or silicon-germanium-on-insulator may also be included. In other embodiments, the substrate 1 may be a non-conductive glass or a sapphire substrate.
In step S20, as shown in fig. 2 and 3, a stacked bottom overlay mark 1, an interlayer overlay mark 2, and a top test overlay mark 30 are sequentially formed on the substrate.
In this embodiment, the stacked bottom overlay mark 1, interlayer overlay mark 2, and top test overlay mark 30 are sequentially formed on the substrate by a photolithography process. Wherein the photolithography process comprises: an exposure process and an etching process. In this embodiment, the materials of the bottom overlay mark 1, the interlayer overlay mark 2, and the top test overlay mark 30 may be metals, and the shapes of the bottom overlay mark 1, the interlayer overlay mark 2, and the top test overlay mark 3 may be rectangular, rectangular rings, or the like.
In step S30, as shown in fig. 2 and 3, the interlayer alignment accuracy A1 of the interlayer overlay mark 2 relative to the bottom overlay mark 1, the first test alignment accuracy B1 of the top test overlay mark 30 relative to the bottom overlay mark 1, or the second test alignment accuracy B2 of the top test overlay mark 30 relative to the interlayer overlay mark 2 is measured.
In this embodiment, the method for obtaining the interlayer alignment accuracy A1 includes the following step one and step two.
In step one, a coordinate system is established, and the center points of the interlayer overlay mark 2 and the bottom overlay mark 1 are projected into the coordinate system.
In the second step, a first offset value of the center point of the interlayer overlay mark 2 relative to the center point of the bottom overlay mark 1 is obtained, and the first offset value is recorded as interlayer alignment precision A1.
Further, in this embodiment, the method for measuring the first test alignment accuracy B1 includes the following first and second steps.
In a first step, a coordinate system is established and the center points of the top test overlay mark 30 and the bottom overlay mark 1 are projected into the coordinate system.
In the second step, a second offset value of the center point of the top test overlay mark 30 relative to the center point of the bottom overlay mark 1 is obtained, and the second offset value is recorded as the first test alignment precision B1.
Further, in this embodiment, the method for obtaining the second test alignment precision B2 includes the following steps.
First, a coordinate system is established, and the center points of the top test overlay mark 30 and the interlayer overlay mark 2 are projected into the coordinate system.
And secondly, obtaining a third offset value of the central point of the top test overlay mark 30 relative to the central point of the interlayer overlay mark 2, and recording the third offset value as a second test alignment precision B2.
In this embodiment, the coordinate system is a planar two-dimensional coordinate system. And, in this embodiment, when the interlayer alignment accuracy A1, the first test accuracy B1, and the second test accuracy B2 are obtained, the established coordinate system is the same coordinate system. The three test accuracies described above may be obtained by establishing the coordinate system. In this embodiment, the interlayer alignment accuracy A1, the first test accuracy B1, and the second test accuracy B2 may be positive or negative. In particular to the actual situation.
In step S40, referring to fig. 2 and 3 in combination with fig. 4, a first compensation accuracy C1 of the top overlay mark 3 is obtained according to the interlayer alignment accuracy A1 and the first test alignment accuracy B1, or a second compensation accuracy C2 of the top overlay mark 3 is obtained according to the interlayer alignment accuracy A1 and the second test alignment accuracy B2.
In this embodiment, the interlayer alignment accuracy A1 between the interlayer overlay mark 2 and the bottom overlay mark 1 is measured, the first test accuracy B1 between the top test overlay mark 30 and the bottom overlay mark 1 is measured, or the second test accuracy B2 between the top test overlay mark 30 and the interlayer overlay mark 2 is measured. And then obtaining the compensation precision corresponding to the top overlay mark 3 according to the first test precision B1 and the interlayer alignment precision A1 or according to the second test precision B2 and the interlayer alignment precision A1. The process of obtaining the top alignment precision corresponding to the top alignment mark 3 is simple and accurate, so that the performance of the finally prepared semiconductor structure is improved.
The method for obtaining the first compensation precision C1 comprises the following steps: calculated according to the following equation (1) to obtain the first compensation accuracy C1.
C1 = (b1+b1-A1) ×x% -formula (1)
Wherein, C1 represents a first compensation precision, B1 represents a first test alignment precision, A1 represents the bottom alignment precision, and X% represents a weight ratio of the top overlay mark 3 relative to the bottom overlay mark 1 and the interlayer overlay precision 2.
In this embodiment, the range of X% is: 0% -100%. And when the numerical values of A1 and B1 are different in positive and negative, or when the numerical values of A1 and B1 are the same in positive and negative and the absolute value of A1 is larger than 2 times of the absolute value of B1, and meanwhile when the X% is larger than 50%, the compensation is represented to offset towards the direction of the top overlay mark 3 relative to the middle overlay mark 2, so that the second alignment precision B2 'of the top overlay mark 3 relative to the middle overlay mark 2 is better than the first alignment precision B1' of the top overlay mark 3 relative to the bottom overlay precision 1. When X% is less than 50%, the reverse is true, namely: the direction offset of the compensation top test overlay mark 3 relative to the bottom overlay mark 1 is shown, so that the first alignment precision B1 'of the top overlay mark 3 relative to the bottom overlay mark 1 is better than the second alignment precision B2' of the top overlay mark 3 relative to the interlayer overlay mark 2. If X% is equal to 0, this indicates that no offset compensation is required.
And the method for obtaining the second compensation precision C2 comprises the following steps: calculated according to equation (2) to obtain said second compensation accuracy C2.
C2 = (b2+b2+a1) ×y% -formula (2)
Wherein, C2 represents the second compensation precision, B2 represents the second test alignment precision, a represents the bottom alignment precision, and Y% represents the emphasis ratio of the top overlay mark 3 relative to the bottom overlay mark 1 and the interlayer overlay mark 2.
In this embodiment, the Y% range is: 0% -100%. And when the numerical values of A1 and B2 are different in positive and negative, or when the numerical values of A1 and B2 are the same in positive and negative and the absolute value of A1 is larger than 2 times of the absolute value of B2, and when Y% is larger than 50%, the compensation is represented to offset towards the direction of the top overlay mark 3 relative to the bottom overlay mark 1, so that the first alignment precision B1 'of the top overlay mark 3 relative to the bottom overlay mark 1 is better than the second alignment precision B2' of the top overlay mark 3 relative to the interlayer overlay mark 2. When the X% is smaller than 50%, otherwise, the offset is compensated to the direction of the top test overlay mark 3 relative to the interlayer overlay mark 2, so that the second alignment precision B2 'of the top overlay mark 3 relative to the interlayer overlay mark 2 is better than the first alignment precision B1' of the top overlay mark 3 relative to the bottom overlay mark 1. If X% is equal to 0, this indicates that no offset compensation is required.
In the actual production process, X% and Y% are generally equal to 50%, so as to obtain a first alignment precision B1 'of the top overlay mark 3 with respect to the bottom overlay precision 1 and a second alignment precision B2' of the top overlay mark 3 with respect to the middle overlay mark 2, which are equal. That is, the first compensation accuracy B1 'and the second compensation accuracy B2' are compatible with compensation. Specifically, as shown in fig. 2, it can be seen that: b2 If C2 = (b1-a1+b1-a1+a1) = 50%, i.e., c2 = (b1+b1-a1) = 50% = C1.
In addition, in the present embodiment, the values of X% and Y% described above are obtained according to actual production processes, and are not particularly limited herein.
In step S50, referring to fig. 4, the top test overlay mark 30 is removed, and a top overlay mark 3 is formed on the interlayer overlay mark 2 according to the first compensation accuracy C1 or the second top alignment mark C2.
The method for forming the top overlay mark 3 on the interlayer overlay mark 2 includes the following steps S501 to S503.
In step S501, a top overlay mark material layer (not shown) is formed on the interlayer overlay mark 2.
In step S502, a mask is provided, and the mask is aligned to the bottom overlay mark 1 or the interlayer overlay mark 2, and a photolithography process is performed using the mask as a mask, so as to form the top overlay mark layer 3.
The first alignment precision B1' of the mask plate aligned with respect to the bottom overlay mark 1 is obtained according to a first set coordinate parameter and the first compensation precision C1 or the second compensation precision C2 when the top test overlay mark 30 is prepared by taking the bottom overlay mark 1 as a reference. Specifically, the first compensation precision C1 or the second compensation precision C2 is subtracted from the X and Y coordinates in the first set coordinate parameter to obtain the first alignment precision B1'.
Or, the second alignment precision B2' of the mask plate aligned with respect to the interlayer overlay mark 2 is obtained according to a second set coordinate parameter and the first compensation precision C1 or the second compensation precision C2 when the top test overlay mark 3 is prepared by taking the interlayer overlay mark 2 as a reference. Specifically, the X and Y coordinates in the second set coordinate parameter are subtracted by the first compensation precision C1 or the second compensation precision C2, respectively, to obtain the second alignment precision B2'.
Further, in this embodiment, there is also provided a multi-layer overlay mark, where the multi-layer overlay mark is prepared according to the method for preparing a multi-layer overlay mark as described in any one of the above.
In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, so that the same similar parts of each embodiment are referred to each other.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. A method for preparing an overlay mark between layers, comprising:
providing a substrate;
sequentially forming a laminated bottom overlay mark, an interlayer overlay mark and a top test overlay mark on the substrate;
measuring the interlayer alignment precision of the interlayer alignment mark relative to the bottom alignment mark, measuring the first test alignment precision of the top test alignment mark relative to the bottom alignment mark, or measuring the second test alignment precision of the top test alignment mark relative to the interlayer alignment mark;
acquiring first compensation precision corresponding to the top alignment mark according to the interlayer alignment precision and the first test alignment precision, or acquiring second compensation precision corresponding to the top alignment mark according to the interlayer alignment precision and the second test alignment precision;
and removing the top test overlay mark, and forming a top overlay mark on the interlayer overlay mark according to the first compensation precision or the second compensation precision.
2. The method of manufacturing an overlay mark between layers according to claim 1, wherein the method of obtaining the first compensation accuracy comprises:
calculating according to formula c1= (b1+b1-A1) ×x% to obtain the first compensation accuracy;
wherein, C1 represents a first compensation precision, B1 represents a first test alignment precision, A1 represents the interlayer alignment precision, and X% represents a first side weight ratio of a top overlay mark relative to a bottom overlay mark and the interlayer overlay mark.
3. The method of producing an overlay mark between layers according to claim 2, wherein the x% range is: 0% -100%.
4. The method of producing an overlay mark between layers of claim 1, wherein the method of obtaining the second compensation accuracy comprises:
calculating according to formula c2= (b2+b2+a1) ×y% to obtain the second compensation accuracy;
wherein, C2 represents a second compensation precision, B2 represents a second test alignment precision, A1 represents the interlayer alignment precision, and Y% represents a second side weight ratio of the top overlay mark relative to the bottom overlay mark and the interlayer overlay mark.
5. The method of producing an overlay mark between layers according to claim 4, wherein the y% range is: 0% -100%.
6. The method for preparing the inter-layer overlay mark according to claim 1, wherein the method for obtaining the inter-layer alignment accuracy comprises:
establishing a coordinate system, and projecting center points of the interlayer overlay mark and the bottom overlay mark into the coordinate system;
and acquiring a first offset value of the central point of the interlayer alignment mark relative to the central point of the bottom alignment mark, and recording the first offset value as the interlayer alignment precision.
7. The method for preparing an overlay mark between layers according to claim 1, wherein the method for obtaining the first test alignment accuracy comprises:
establishing a coordinate system, and projecting center points of the top test overlay mark and the bottom overlay mark into the coordinate system;
and acquiring a second offset value of the central point of the top test overlay mark relative to the central point of the bottom overlay mark, and recording the second offset value as the first test alignment precision.
8. The method for preparing an overlay mark between layers according to claim 1, wherein the method for obtaining the second test alignment accuracy comprises:
establishing a coordinate system, and projecting center points of the top test overlay mark and the interlayer overlay mark into the coordinate system;
and acquiring a third offset value of the central point of the top test overlay mark relative to the central point of the interlayer overlay mark, and recording the third offset value as a second test alignment precision.
9. The method of producing an inter-layer overlay mark according to claim 1, wherein the method of forming a top overlay mark on the inter-layer overlay mark comprises:
forming a top overlay mark material layer on the interlayer overlay mark;
providing a mask plate, aligning the mask plate to the bottom overlay mark or the interlayer overlay mark, and executing a photoetching process by taking the mask plate as a mask to form the top overlay mark layer;
wherein the first alignment precision of the mask plate relative to the bottom overlay mark is obtained according to a first set coordinate parameter and the first compensation precision or the second compensation precision when the top test overlay mark is prepared by taking the bottom overlay mark as a reference, or,
and the second alignment precision of the mask plate relative to the interlayer alignment mark is obtained according to a second set coordinate parameter and the first compensation precision or the second compensation precision when the top test alignment mark is prepared by taking the interlayer alignment mark as a reference.
10. A multilayer overlay mark prepared according to the method of any one of claims 1 to 9.
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