CN116106712A - PN junction temperature measuring method, system and computer readable storage medium - Google Patents
PN junction temperature measuring method, system and computer readable storage medium Download PDFInfo
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Abstract
The invention provides a PN junction temperature measuring method, a PN junction temperature measuring system and a computer readable storage medium, wherein the PN junction temperature measuring method considers the condition that an ideal factor changes along with temperature, and can realize temperature measurement by integrating forward conduction current and forward conduction voltage of a PN junction respectively.
Description
Technical Field
The present invention relates to the field of temperature measurement technologies, and in particular, to a PN junction temperature measurement method, system, and computer readable storage medium.
Background
The current-voltage (I-V) characteristic of the PN junction is temperature dependent and can be used as a temperature sensor. Researchers serially connect PN junctions with proper resistors to realize high-precision linearization of PN junction forward voltage and temperature and improve temperature measurement precision. The Chinese patent CN 104820179A adopts two voltage-controlled current sources, and proposes a PN junction temperature measuring method which eliminates the influence of series resistance and is irrelevant to reverse saturation current. Under different temperatures, the ideal factors of the PN junctions are different, and the change of the ideal factors of the PN junctions along with the temperature brings great challenges to accurate temperature measurement. Related scholars have developed a PN junction temperature measurement method, but most methods consider the ideal factor as a constant or do not consider the influence of the ideal factor when using the PN junction for temperature measurement, which will have a large temperature measurement error. Chinese patent CN113588106a proposes a PN junction temperature measurement method for compensating for the intercept difference between the forward voltage and the temperature curve of the PN junction, which discloses a PN junction temperature measurement method for collecting the temperature of the forward voltage measurement of the PN junction under the condition of two constant currents with different magnitudes, but the method is not suitable for temperature measurement under the condition of variable on-current. The PN junction can be various types of diodes commonly used, parasitic diodes of switching tubes (such as MOSFETs) and the like. In an application system, a PN junction always flows through a changed current, and the PN junction temperature measurement method which is irrelevant to reverse saturation current and is applicable to the condition of variable on current needs to be further considered, so that the accuracy of temperature measurement is further improved.
Disclosure of Invention
Aiming at the technical problems, the invention discloses a PN junction temperature measuring method, a PN junction temperature measuring system and a computer readable storage medium, wherein the temperature measuring method is irrelevant to reverse saturation current of a PN junction and is suitable for PN junction temperature measurement under the condition of variable on-current, and the method considers factors of ideal factors changing along with temperature and improves temperature measurement precision.
In this regard, the invention adopts the following technical scheme:
a PN junction temperature measurement method, comprising:
step S1, selecting PN junctions for temperature measurement, and measuring forward conduction current signals i of the PN junctions at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
step S2, arbitrarily selecting two equal time periods delta t according to signal curves of forward conduction current, forward conduction voltage and time at different temperatures 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 The method comprises the steps of carrying out a first treatment on the surface of the Wherein S is V1 Represents Δt 1 Integration of PN junction forward conduction voltage in time period, S V2 Represents Δt 2 Integration of PN junction forward conduction voltage in time period, S I1 Represents Δt 1 Integration of PN junction forward conduction current in time period, S I2 Represents Δt 2 Integration of the PN junction forward conduction current over a period of time.
Step S3, utilize
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
step S4, combining the ideal factors n at different temperatures obtained in the step S3 by using a data fitting method
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
s5, measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
step S6, selecting a time period equal to the forward conduction current in step S2 according to the obtained signal curves of forward conduction current, forward conduction voltage and time, and calculating to obtain S v11 ，S v21 ，S I11 ，S I21 ；
Step S7, according to
Calculating the magnitude of the m value, wherein k is BoltzmannA constant, q is a fundamental charge constant;
step S8, according to
The actual PN junction temperature T is calculated.
By adopting the technical scheme, the steps S1-S4 are to randomly select a plurality of temperatures to measure the ideal factors of the PN junction, and obtain constants a, b and c in a fitting curve of the ideal factors along with the temperature change. In practical application, after the PN junction and the testing conditions thereof are selected, a, b and c of the PN junction are constants, the PN junction is measured once, and steps S1-S4 are not needed when the PN junction is used for measuring temperature in the follow-up process. However, when the PN junction is replaced, the constants a, b and c need to be obtained again according to the steps S1 to S4.
As a further development of the invention, the PN junction is a parasitic diode of a diode or a switching tube.
The invention discloses a PN junction temperature measurement system, which comprises:
the signal curve acquisition module is used for acquiring forward conduction current signals i of the PN junction selected at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
an integrating module for arbitrarily selecting two equal time periods deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 ；
Ideal factor calculating moduleA block for utilizing
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
the data fitting and constant calculating module combines the data fitting method according to the ideal factors n at different temperatures obtained by the ideal factor calculating module
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
the temperature measurement signal acquisition module is used for measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
the temperature measurement calculation module is used for selecting and delta t 1 And Deltat 2 S is calculated in a period of time when the forward conduction current is equal v11 ，S v21 ，S I11 ，S I21 ；
PN junction temperature calculation module according to
Calculating the value of m, wherein k is Boltzmann constant, and q is basic charge constant;
according to
The actual PN junction temperature T is calculated.
As a further development of the invention, the PN junction is a parasitic diode of a diode or a switching tube.
The invention discloses a computer readable storage medium comprising a computer program which, when run on an electronic device, causes the electronic device to perform the PN junction temperature measurement method as described above.
The invention discloses a PN junction temperature measuring device, which comprises: the PN junction temperature measuring device comprises a test circuit, a memory, a processor and a computer program which is stored in the memory and can run on the processor, wherein the PN junction temperature measuring method is realized when the processor executes the computer program.
Compared with the prior art, the invention has the beneficial effects that:
firstly, the PN junction temperature measuring method adopting the technical scheme of the invention is irrelevant to the reverse saturation current of the PN junction and is suitable for temperature measurement under the condition of variable on-current, and the temperature measurement can be realized by respectively integrating the forward on-current and the forward on-voltage signals of the PN junction.
Secondly, according to the PN junction temperature measuring method, temperature measurement is achieved through integration of the voltage and current signals of the PN junction, and sampling frequency of the voltage signals and the current signals can be reduced.
Thirdly, the temperature measurement method provided by the invention considers the factors of the ideal factors of the PN junction along with the temperature change, obtains constants a, b and c related to the ideal factors in an experimental mode, and is used for correcting temperature measurement and improving measurement accuracy.
Fourth, the forward conduction voltage and the forward conduction current integration time period of the PN junction temperature measuring method provided by the invention can be selected according to the temperature actual measurement requirement, the applicability is strong, and meanwhile, the data in a plurality of periods can be selected for temperature measurement, so that the detection precision is improved.
Fifth, the PN junction applicable to the temperature measuring method of the technical scheme of the invention has various forms, can be diodes of various forms commonly used, can also be PN junctions of other forms such as parasitic diodes of switching tubes (like MOSFET) and the like, and has wide application range.
Drawings
Fig. 1 is a schematic diagram of forward conduction transient current and forward conduction transient voltage of a PN junction at random one temperature according to an embodiment of the present invention.
Fig. 2 is a waveform diagram of forward conduction current and forward conduction voltage of a common diode according to embodiment 1 of the present invention.
Fig. 3 is a graph showing the general diode management ideal factor and its fitting curve according to embodiment 1 of the present invention.
Fig. 4 is a graph showing the analysis of the temperature measurement error of the general diode according to example 1 of the present invention.
Fig. 5 is a graph showing the SiC-type schottky diode management ideal factor and the fitted curve thereof according to example 2 of the present invention.
Fig. 6 is an analysis of the temperature measurement error of the SiC-type schottky diode of example 2 of the present invention.
Fig. 7 is a graph showing the parasitic diode ideality factor and a fitted curve of the SiC-type MOSFET of example 3 of the present invention.
Fig. 8 is an analysis of the parasitic diode temperature measurement error of the SiC type MOSFET of example 3 of the present invention.
Fig. 9 is a graph of the parasitic diode management ideal for a conventional MOSFET and its fit in accordance with embodiment 4 of the present invention.
Fig. 10 is a diagram showing a temperature measurement error of a parasitic diode of a general MOSFET in embodiment 4 of the present invention.
Detailed Description
Preferred embodiments of the present invention are described in further detail below.
In order to solve the problems in the prior art, the technical scheme of the invention considers the condition that an ideal factor changes along with temperature, provides a PN junction temperature measuring method which is irrelevant to reverse saturation current and is applicable to the condition of variable on current, and improves the temperature measuring precision. Meanwhile, the PN junction temperature measuring method provided by the invention can realize temperature measurement by integrating the forward conduction current and the forward conduction voltage of the PN junction respectively, and is simple and easy to operate.
The PN junction temperature measurement method comprises the following implementation processes:
step1: PN junction used for temperature measurement is selected, and the PN junction can be a diode or a parasitic diode of a switching tube.
According to the actual use condition of the PN junction, measuring forward conduction current signals i of the PN junction at different temperatures b Forward on voltage signal v f ；
Step2: arbitrarily selecting two equal time periods Δt 1 And Deltat 2 Through S V1 ＝∫v f1 dt，S V2 ＝∫v f2 dt，S I1 ＝∫ln(i b1 )dt，S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods to obtain S V1 ，S V2 ，S I1 ，S I2 ；
Step3: by means of
Solving ideal factors at different temperatures;
step4: fitting by using data fitting method to obtain
Fitting constants a, b, c in the relation;
step5: in a PN solid application system, measuring a forward conduction current signal and a forward conduction voltage signal of the PN solid application system to obtain signal curves of forward conduction current, forward conduction voltage and time;
step6: selecting a time period equal to the forward current in the step2, and calculating to obtain S v11 ，S v21 ，S I11 ，S I21 ；
Step7: according to
Calculating the size of the m value;
step8: according to
And calculating the temperature of the PN junction.
The analytical reasoning process for the implementation steps is as follows:
(1) PN junction temperature measurement method for eliminating reverse saturation current influence
The relationship between the forward conduction current and the forward conduction voltage of the PN junction is shown in the formula (1):
in the formula (1), i b For forward conduction current of PN junction, I s Is reverse saturation current, k is Boltzmann constant, q is basic charge constant, n is ideal factor, v f The forward conduction voltage of the PN junction is shown, and T is the thermodynamic temperature. When (when)
The formula (1) is simplified to the formula (2). As shown in FIG. 1, the schematic diagrams of PN junction forward conduction current and forward conduction voltage are that two equal time period Deltat are selected in the phase of PN junction forward conduction current change 1 And Deltat 2 Wherein Δt is 1 The forward current and the forward voltage thereof in the time period are respectively denoted as i b1 And v f1 ，Δt 2 The forward current and the forward voltage thereof in the time period are respectively denoted as i b2 And v f2 The temperature measurement deduction process of the PN junction is as follows: />
Let S V1 ＝∫v f1 dt，S V2 ＝∫v f2 dt，S I1 ＝∫ln(i b1 )dt，S I2 ＝∫ln(i b2 ) dt, when formula (8) is rewritten to formula (9), the expression for deriving the temperature T is shown in formula (10). The reverse saturation current of the PN junction is related to temperature, and the temperature is calculated after the forward conduction current and the forward conduction voltage of the PN junction in different time periods are respectively integrated, so that the influence of the reverse saturation current on temperature measurement is eliminated.
(2) PN junction temperature measurement method considering ideal factor along with temperature change
From the expression (10), the calculation formula of the ideality factor can be deduced as shown in the expression (11). The ideality factor of PN junction changes along with temperature, and the trend of different types of PN junction changes along with temperature is different, for example, the ideality factor of PN junction of common Si type is reduced along with temperature rise, while the ideality factor of PN junction of SiC type is increased along with temperature rise, and the ideality factor of part of PN junction is not greatly changed along with temperature. The change of the ideality factor of the PN junction with the temperature can be expressed as the change of the inverse relation, thus the expression of the ideality factor of the PN junction with the change of the temperature is expressed as (12), wherein a, b and c are constants related to the PN junction used for temperature measurement.
Order the
The PN junction temperature expression (10) is rewritten as shown in expression (13). Resolving formula (13) to obtain a temperature-dependent formula (14)In practical application, the solution of the equation is a positive temperature value, and the positive numerical solution of the equation (14) is the temperature value measured by the PN junction, so that the temperature T measured by the PN junction is shown as a formula (15).
aT 2 +(ac+b-m)T-mc＝0 (14)
The embodiment of the invention also discloses a PN junction temperature measurement system, which comprises:
the curve acquisition module of PN junction forward current, forward voltage and time is used for acquiring the forward current signal i of the PN junction selected at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
an integrating module for arbitrarily selecting two equal time periods deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt respectively to two timesIntegrating the forward conduction voltage and the forward conduction current in the interval to obtain S V1 ，S V2 ，S I1 ，S I2 ；
An ideality factor calculation module for utilizing
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
the data fitting and constant calculating module combines the data fitting method according to the ideal factors n at different temperatures obtained by the ideal factor calculating module
Fitting to obtain constants a, b and c, wherein T is thermodynamic temperature;
the temperature measurement signal acquisition module is used for measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
the temperature measurement calculation module is used for selecting and delta t 1 And Deltat 2 Equal time period, calculate S v11 ，S v21 ，S I11 ，S I21 ；
PN junction temperature calculation module according to
Calculating the value of m, wherein k is Boltzmann constant, and q is basic charge constant;
according to
The actual PN junction temperature T is calculated.
The PN junction is a parasitic diode of a diode or a switching tube.
The embodiment of the invention also discloses a computer readable storage medium, which comprises a computer program, and when the computer program runs on the electronic equipment, the electronic equipment is caused to execute the PN junction temperature measuring method.
The embodiment of the invention also discloses a PN junction temperature measuring device, which comprises: the PN junction temperature measuring device comprises a test circuit, a memory, a processor and a computer program which is stored in the memory and can run on the processor, wherein the PN junction temperature measuring method is realized when the processor executes the computer program.
The actual temperature measurement verification is performed by applying the PN junction temperature measurement method.
Example 1
Examples of common diode temperature measurements.
By using the PN junction temperature measurement method, a common diode with the model of MUR3060WT is arbitrarily selected for temperature measurement, forward conduction current and forward conduction voltage waveforms added to the diode are shown in figure 2, and the frequency of an added current signal is 5kHz. The calculated ideality factor and its fitted curve according to the diode forward conduction voltage and forward conduction current at different temperatures are shown in fig. 3, the diode ideality factor decreases with increasing temperature, the fitted curve yields the constants a=1.38, b=3.074, c= -291.5. The method provided by the invention combines constants obtained by fitting curves, the error obtained by adopting the diode temperature measurement is shown as a figure 4, the temperature measurement error obtained by the temperature measurement method is small, and the temperature measurement error at each temperature is within 3 percent, so that the method provided by the invention is feasible.
Example 2
Examples of SiC-type schottky diode temperature measurements.
By using the PN junction temperature measuring method, a SiC type Schottky diode with the model of C4D40120 is arbitrarily selected for measuring temperature, current is added into the SiC type Schottky diode, the frequency of a current signal is 2kHz, and a forward conduction voltage signal of the diode is measured. The calculated ideal factor and its fitting curve according to the forward conduction voltage and forward conduction current of the diode at different temperatures are shown in fig. 5, the ideal factor of the diode increases with the temperature, and the constant a=1.107, b= -2.216, c= -276.1 is obtained by the fitting curve. The method provided by the invention is combined with a constant obtained by fitting a curve, the error obtained by adopting the diode temperature measurement is shown as a figure 6, the temperature measurement error obtained by the temperature measurement method is small, and the temperature measurement error at each temperature is within 3 percent, so that the method provided by the invention is feasible.
Example 3
Examples of SiC-type MOSFET parasitic diode temperature measurements.
By using the PN junction temperature measuring method, a SiC type MOSFET parasitic diode with the model of C2M0080120D is arbitrarily selected for measuring the temperature, the voltage at two ends of GS of the MOSFET is set to be-6V so as to ensure that a channel of the MOSFET is completely closed, current is added into the parasitic diode, the frequency of a current signal is 1.5kHz, and a forward conduction voltage signal of the parasitic diode is measured. The ideal factor and its fitting curve calculated according to the diode forward conduction voltage and forward conduction current signals at different temperatures are shown in fig. 7, the ideal factor of the diode increases with the temperature, and the constants a=1.244, b= -2.851, c= -290.9 are obtained by the fitting curve. The method provided by the invention combines constants obtained by fitting curves, the error obtained by adopting the diode temperature measurement is shown in figure 8, the error of the temperature measurement value obtained by the temperature measurement method is small, and the temperature measurement error at each temperature is within 3 percent, so that the method provided by the invention is feasible.
Example 4
Examples of common MOSFET parasitic diode temperature measurements.
By using the PN junction temperature measuring method, a common MOSFET parasitic diode with the model of IRF520 is arbitrarily selected for measuring temperature, current is added into the parasitic diode, the frequency of a current signal is 10kHz, and the forward conduction voltage signal of the parasitic diode is measured. The ideal factor and the fitting curve thereof calculated according to the forward conduction voltage and forward conduction current signals of the parasitic diode at different temperatures are shown in fig. 9, the ideal factor of the parasitic diode is not changed with the temperature, and the constants a=1.019, b=0.211 and c= -29.49 obtained by the fitting curve. The method provided by the invention combines constants obtained by fitting curves, the error obtained by adopting the parasitic diode temperature measurement is shown in fig. 10, the temperature measurement error obtained by the temperature measurement method is small, and the temperature measurement error at each temperature is within 5%, so that the method provided by the invention is feasible.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (6)
1. The PN junction temperature measurement method is characterized by comprising the following steps of:
step S1, selecting PN junctions for temperature measurement, and measuring forward conduction current signals i of the PN junctions at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
step S2, arbitrarily selecting two equal time periods Deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 ；
Step S3, utilize
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
step S4, combining the ideal factors n at different temperatures obtained in the step S3 by using a data fitting method
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
s5, measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
step S6, selecting a time period equal to the forward current in step S2, and calculating to obtain S v11 ，S v21 ，S I11 ，S I21 ；
Step S7, according to
Calculating the value of m, wherein k is Boltzmann constant, and q is basic charge constant;
step S8, according to
The actual PN junction temperature T is calculated.
2. The PN junction temperature measurement method of claim 1, wherein: the PN junction is a parasitic diode of a diode or a switching tube.
3. A PN junction temperature measurement system, comprising:
the signal curve acquisition module is used for acquiring forward conduction current signals i of the PN junction selected at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
an integrating module for arbitrarily selecting two equal time periods deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 ；
An ideality factor calculation module for utilizing
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
the data fitting and constant calculating module combines the data fitting method according to the ideal factors n at different temperatures obtained by the ideal factor calculating module
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
the temperature measurement signal acquisition module is used for measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
the temperature measurement calculation module is used for selecting and delta t 1 And Deltat 2 S is calculated in a period of time when the forward conduction current is equal v11 ，S v21 ，S I11 ，S I21 ；
PN junction temperature calculation module according to
Calculating the value of mWherein k is a boltzmann constant and q is a fundamental charge constant;
according to
The actual PN junction temperature T is calculated.
4. The PN junction temperature measurement system of claim 3, wherein: the PN junction is a parasitic diode of a diode or a switching tube.
5. A computer readable storage medium, characterized in that the computer readable storage medium comprises a computer program which, when run on an electronic device, causes the electronic device to perform the PN junction thermometry method of claim 1 or 2.
6. A PN junction temperature measuring device, comprising: test circuit, memory, processor and stored on said memory and computer program executable on said processor, said processor implementing the PN junction temperature measurement method according to claim 1 or 2 when executing said computer program.
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