CN116106712A - PN junction temperature measuring method, system and computer-readable storage medium - Google Patents

PN junction temperature measuring method, system and computer-readable storage medium Download PDF

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CN116106712A
CN116106712A CN202310006786.7A CN202310006786A CN116106712A CN 116106712 A CN116106712 A CN 116106712A CN 202310006786 A CN202310006786 A CN 202310006786A CN 116106712 A CN116106712 A CN 116106712A
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junction
forward conduction
temperature measurement
temperature
conduction current
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张东来
朱雪丽
黄雅杰
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Harbin Institute of Technology Shenzhen
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    • G01—MEASURING; TESTING
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    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Abstract

本发明提供了一种PN结测温方法、系统及计算机可读存储介质，该PN结测温方法考虑了理想因子随温度变化情况，只需对PN结的正向导通电流及正向导通电压分别进行积分，即可实现温度的测量，该测温方法与PN结的反向饱和电流无关，并适用于可变导通电流情况下的温度测量，可以降低电压信号和电流信号的采样频率，提高温度测量精度，适用范围广。

Figure 202310006786

The invention provides a PN junction temperature measurement method, system and computer-readable storage medium. The PN junction temperature measurement method considers the ideal factor changing with temperature, and only needs to measure the forward conduction current and forward conduction voltage of the PN junction. The temperature measurement can be realized by integrating separately. This temperature measurement method has nothing to do with the reverse saturation current of the PN junction, and is suitable for temperature measurement under the condition of variable conduction current. It can reduce the sampling frequency of voltage signals and current signals. Improve the temperature measurement accuracy, wide application range.

Figure 202310006786

Description

PN结测温方法、系统及计算机可读存储介质PN junction temperature measurement method, system and computer readable storage medium

技术领域Technical Field

本发明涉及温度测量技术领域，尤其涉及一种PN结测温方法、系统及计算机可读存储介质。The present invention relates to the field of temperature measurement technology, and in particular to a PN junction temperature measurement method, system and computer-readable storage medium.

背景技术Background Art

PN结的电流-电压(I-V)特性与温度相关，可以作为温度传感器。有研究者将PN结与适宜的电阻串联，实现PN结正向电压与温度的高精度线性化，提高测温精度。中国专利CN104820179A采用两个压控电流源，提出了一种消除串联电阻影响且与反向饱和电流无关的PN结测温方法。不同温度下，PN结的理想因子不一样，PN结的理想因子随温度发生变化对精确测温带来了极大的挑战。相关学者对PN结测温方法展开了研究，但多数方法在利用PN结进行温度测量时将理想因子视为常数或不考虑理想因子的影响，这将会存在较大的测温误差。中国专利CN113588106A提出了一种补偿PN结正向电压与温度曲线截距差异，其公开了采集两个大小不同的恒定电流条件下的PN结正向电压测量温度的PN结测温方法，但该方法不适用于可变导通电流情况下的温度测量。PN结可以是常用的各种类型的二极管，也可以是开关管(如MOSFET)的寄生二极管等。PN结在应用系统中，经常会流经变化的电流，需要进一步考虑与反向饱和电流无关、并适用于可变导通电流情况下的PN结测温方法，进一步提高温度测量的精度。The current-voltage (I-V) characteristic of the PN junction is related to temperature and can be used as a temperature sensor. Some researchers have connected the PN junction in series with a suitable resistor to achieve high-precision linearization of the PN junction forward voltage and temperature, thereby improving the temperature measurement accuracy. Chinese patent CN104820179A uses two voltage-controlled current sources to propose a PN junction temperature measurement method that eliminates the influence of series resistance and is independent of the reverse saturation current. The ideal factor of the PN junction is different at different temperatures, and the change of the ideal factor of the PN junction with temperature poses a great challenge to accurate temperature measurement. Relevant scholars have conducted research on PN junction temperature measurement methods, but most methods regard the ideal factor as a constant or do not consider the influence of the ideal factor when using the PN junction for temperature measurement, which will result in a large temperature measurement error. Chinese patent CN113588106A proposes a method for compensating for the difference in the intercept of the PN junction forward voltage and temperature curve, which discloses a PN junction temperature measurement method for collecting the PN junction forward voltage under two constant current conditions of different sizes to measure the temperature, but this method is not suitable for temperature measurement under variable conduction current conditions. PN junctions can be various commonly used diodes or parasitic diodes of switch tubes (such as MOSFET). In application systems, PN junctions often flow with variable currents. It is necessary to further consider PN junction temperature measurement methods that are independent of reverse saturation current and applicable to variable conduction currents, so as to further improve the accuracy of temperature measurement.

发明内容Summary of the invention

针对以上技术问题，本发明公开了一种PN结测温方法、系统及计算机可读存储介质，该测温方法与PN结的反向饱和电流无关、适用于可变导通电流情况下的PN结温度测量，该方法考虑了理想因子随温度变化的因素，提高温度测量精度。In response to the above technical problems, the present invention discloses a PN junction temperature measurement method, system and computer-readable storage medium. The temperature measurement method is independent of the reverse saturation current of the PN junction and is suitable for PN junction temperature measurement under variable on-current conditions. The method takes into account the factor that the ideal factor changes with temperature, thereby improving the temperature measurement accuracy.

对此，本发明采用的技术方案为：To this end, the technical solution adopted by the present invention is:

一种PN结测温方法，其包括：A PN junction temperature measurement method, comprising:

步骤S1，选定测温使用的PN结，测定不同温度下所述PN结的正向导通电流信号ib及正向导通电压信号vf，得到不同温度下的正向导通电流、正向导通电压与时间的信号曲线；Step S1, selecting a PN junction for temperature measurement, measuring the forward conduction current signal i b and the forward conduction voltage signal v f of the PN junction at different temperatures, and obtaining signal curves of the forward conduction current, forward conduction voltage and time at different temperatures;

步骤S2，针对不同温度下正向导通电流、正向导通电压与时间的信号曲线，任意选择两个相等的时间段Δt1和Δt2，对应得到所述PN结在Δt1时间段的正向导通电流信号ib1、正向导通电压信号vf1，以及所述PN结在Δt2时间段的正向导通电流信号ib2、正向导通电压信号vf2，通过SV1＝∫vf1dt、SV2＝∫vf2dt、SI1＝∫ln(ib1)dt、SI2＝∫ln(ib2)dt分别对两个时间段内的正向导通电压及正向导通电流进行积分，得出SV1，SV2，SI1，SI2；其中，SV1代表Δt1时间段内PN结正向导通电压的积分，SV2代表Δt2时间段内PN结正向导通电压的积分，SI1代表Δt1时间段内PN结正向导通电流的积分，SI2代表Δt2时间段内PN结正向导通电流的积分。Step S2, for the signal curves of forward conduction current, forward conduction voltage and time at different temperatures, arbitrarily select two equal time periods Δt1 and Δt2 , and correspondingly obtain the forward conduction current signal i b1 and the forward conduction voltage signal v f1 of the PN junction in the Δt1 time period, and the forward conduction current signal i b2 and the forward conduction voltage signal v f2 of the PN junction in the Δt2 time period, and integrate the forward conduction voltage and the forward conduction current in the two time periods by S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt, S I2 =∫ln(i b2 )dt, respectively, to obtain S V1 , S V2 , S I1 , S I2 ; wherein S V1 represents the integral of the forward conduction voltage of the PN junction in the Δt1 time period, and S V2 represents the integral of the forward conduction voltage of the PN junction in the Δt2 time period. S I1 represents the integral of the PN junction forward conduction voltage during the Δt 2 time period, S I2 represents the integral of the PN junction forward conduction current during the Δt 2 time period.

步骤S3，利用

Figure BDA0004037265360000021
求出不同温度下的理想因子n，其中k为玻尔兹曼常数，q为基本电荷常数，T为热力学温度；Step S3, using
Figure BDA0004037265360000021
Find the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the basic charge constant, and T is the thermodynamic temperature;

步骤S4，根据步骤S3得到的不同温度下的理想因子n，利用数据拟合的方法，结合

Figure BDA0004037265360000022
拟合关系式，拟合得出常数a，b，c，其中T为热力学温度；Step S4, according to the ideal factor n at different temperatures obtained in step S3, using the data fitting method, combined with
Figure BDA0004037265360000022
Fitting relationship, fitting to get constants a, b, c, where T is the thermodynamic temperature;

步骤S5，利用所述PN结进行测温，测量通过所述PN结的正向导通电流信号及正向导通电压信号，得到正向导通电流、正向导通电压与时间的信号曲线；Step S5, using the PN junction to measure temperature, measuring the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtaining a signal curve of the forward conduction current, the forward conduction voltage and time;

步骤S6，针对得到的正向导通电流、正向导通电压与时间的信号曲线，选取与步骤S2正向导通电流相等的时间段，计算得出Sv11，Sv21，SI11，SI21；Step S6, for the obtained signal curves of forward conduction current, forward conduction voltage and time, select a time period equal to the forward conduction current in step S2, and calculate S v11 , S v21 , S I11 , S I21 ;

步骤S7，根据

Figure BDA0004037265360000023
计算出m值的大小，其中k为玻尔兹曼常数，q为基本电荷常数；Step S7, according to
Figure BDA0004037265360000023
Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

步骤S8，根据

Figure BDA0004037265360000024
计算出实际的PN结的温度T。Step S8, according to
Figure BDA0004037265360000024
Calculate the actual PN junction temperature T.

采用此技术方案，步骤S1～S4为通过随机选取几个温度测出PN结的理想因子，得出理想因子随温度变化的拟合曲线中的常数a、b、c。在实际应用中，当选定好PN结及其测试条件后，PN结的a、b、c就是常数，只需要测量一次即可，后续利用PN结测温时不再需要步骤S1～S4。但是当更换PN结时，需要重新按照步骤S1～S4得出常数a、b、c。With this technical solution, steps S1 to S4 are to measure the ideal factor of the PN junction by randomly selecting several temperatures, and obtain constants a, b, and c in the fitting curve of the ideal factor changing with temperature. In practical applications, after the PN junction and its test conditions are selected, a, b, and c of the PN junction are constants, which only need to be measured once. When the PN junction is used for subsequent temperature measurement, steps S1 to S4 are no longer required. However, when the PN junction is replaced, the constants a, b, and c need to be obtained again according to steps S1 to S4.

作为本发明的进一步改进，所述PN结为二极管或开关管的寄生二极管。As a further improvement of the present invention, the PN junction is a diode or a parasitic diode of a switch tube.

本发明公开了一种PN结测温系统，其包括：The present invention discloses a PN junction temperature measurement system, which comprises:

PN结正向导通电流、正向导通电压与时间的信号曲线获取模块，用于获取不同温度下选定的PN结的正向导通电流信号ib及正向导通电压信号vf，得到不同温度下的正向导通电流、正向导通电压与时间的信号曲线；A signal curve acquisition module of the PN junction forward conduction current, forward conduction voltage and time is used to acquire the forward conduction current signal i b and the forward conduction voltage signal v f of the selected PN junction at different temperatures, and obtain the signal curves of the forward conduction current, forward conduction voltage and time at different temperatures;

积分模块，用于任意选择两个相等的时间段Δt1和Δt2，对应得到所述PN结在Δt1时间段的正向导通电流信号ib1、正向导通电压信号vf1，以及所述PN结在Δt2时间段的正向导通电流信号ib2、正向导通电压信号vf2，通过SV1＝∫vf1dt、SV2＝∫vf2dt、SI1＝∫ln(ib1)dt、SI2＝∫ln(ib2)dt分别对两个时间段内的正向导通电压及正向导通电流进行积分，得出SV1，SV2，SI1，SI2；An integration module, used for arbitrarily selecting two equal time periods Δt1 and Δt2 , correspondingly obtaining the forward conduction current signal i b1 and the forward conduction voltage signal v f1 of the PN junction in the time period Δt1 , and the forward conduction current signal i b2 and the forward conduction voltage signal v f2 of the PN junction in the time period Δt2 , and integrating the forward conduction voltage and the forward conduction current in the two time periods respectively by S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt, S I2 =∫ln(i b2 )dt, to obtain S V1 , S V2 , S I1 , S I2 ;

理想因子计算模块，用于利用

Figure BDA0004037265360000031
求出不同温度下的理想因子n，其中k为玻尔兹曼常数，q为基本电荷常数，T为热力学温度；Ideality factor calculation module for utilizing
Figure BDA0004037265360000031
Find the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the basic charge constant, and T is the thermodynamic temperature;

数据拟合和常数计算模块，根据理想因子计算模块得到的不同温度下的理想因子n，利用数据拟合的方法，结合

Figure BDA0004037265360000032
拟合关系式，拟合得出常数a，b，c，其中T为热力学温度；The data fitting and constant calculation module uses the data fitting method and combines the ideal factor n at different temperatures obtained by the ideal factor calculation module.
Figure BDA0004037265360000032
Fitting relationship, fitting to get constants a, b, c, where T is the thermodynamic temperature;

测温信号获取模块，利用所述PN结进行测温，测量通过所述PN结的正向导通电流信号及正向导通电压信号，得到正向导通电流、正向导通电压与时间的信号曲线；A temperature measurement signal acquisition module is used to measure the temperature by using the PN junction, measure the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtain a signal curve of the forward conduction current, the forward conduction voltage and time;

测温计算模块，用于选取与Δt1和Δt2正向导通电流相等的时间段，计算得出Sv11，Sv21，SI11，SI21；The temperature measurement calculation module is used to select a time period equal to the forward conduction current of Δt 1 and Δt 2 , and calculate S v11 , S v21 , S I11 , S I21 ;

PN结温度计算模块，根据

Figure BDA0004037265360000033
计算出m值的大小，其中k为玻尔兹曼常数，q为基本电荷常数；PN junction temperature calculation module, according to
Figure BDA0004037265360000033
Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

根据

Figure BDA0004037265360000034
计算出实际的PN结的温度T。according to
Figure BDA0004037265360000034
Calculate the actual PN junction temperature T.

作为本发明的进一步改进，所述PN结为二极管或开关管的寄生二极管。As a further improvement of the present invention, the PN junction is a diode or a parasitic diode of a switch tube.

本发明公开了一种计算机可读存储介质，所述计算机可读存储介质包括计算机程序，当计算机程序在电子设备上运行时，使得所述电子设备执行如上所述的PN结测温方法。The present invention discloses a computer-readable storage medium, which includes a computer program. When the computer program runs on an electronic device, the electronic device executes the PN junction temperature measurement method as described above.

本发明公开了一种PN结测温装置，包括：测试电路、存储器、处理器及存储在所述存储器上并可在所述处理器上运行的计算机程序，所述处理器执行所述计算机程序时，实现如上所述的PN结测温方法。The present invention discloses a PN junction temperature measuring device, comprising: a test circuit, a memory, a processor and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the PN junction temperature measuring method described above is implemented.

与现有技术相比，本发明的有益效果为：Compared with the prior art, the present invention has the following beneficial effects:

第一，采用本发明技术方案的PN结测温方法，该方法与PN结的反向饱和电流无关并适用于可变导通电流情况下的温度测量，通过对PN结的正向导通电流及正向导通电压信号分别进行积分，即可实现温度的测量。First, the PN junction temperature measurement method of the technical solution of the present invention is adopted. This method is independent of the reverse saturation current of the PN junction and is suitable for temperature measurement under variable conduction current conditions. The temperature measurement can be achieved by integrating the forward conduction current and forward conduction voltage signals of the PN junction respectively.

第二，本发明技术方案的PN结测温方法通过对PN结的电压和电流信号进行积分实现温度测量，可以降低电压信号和电流信号的采样频率。Secondly, the PN junction temperature measurement method of the technical solution of the present invention realizes temperature measurement by integrating the voltage and current signals of the PN junction, which can reduce the sampling frequency of the voltage signal and the current signal.

第三，本发明提出的测温方法考虑了PN结的理想因子随温度变化的因素，通过实验方式得出与理想因子相关的常数a，b，c，用于校正温度测量，提高测量精度。Third, the temperature measurement method proposed in the present invention takes into account the fact that the ideal factor of the PN junction varies with temperature, and obtains constants a, b, and c related to the ideal factor through experiments, which are used to correct temperature measurement and improve measurement accuracy.

第四，本发明提出的PN结测温方法的正向导通电压和正向导通电流积分时间段可以根据温度实测需求选取，适用性强，同时也可以选择多个周期内的数据进行温度测量，提高检测精度。Fourthly, the forward conduction voltage and forward conduction current integration time periods of the PN junction temperature measurement method proposed in the present invention can be selected according to the actual temperature measurement requirements, and the applicability is strong. At the same time, data within multiple cycles can also be selected for temperature measurement to improve the detection accuracy.

第五，本发明技术方案的测温方法适用的PN结形式多样，可以是常用的各种形式二极管，也可以是开关管(如MOSFET)的寄生二极管等其他形式的PN结，适用范围广。Fifth, the temperature measurement method of the technical solution of the present invention is applicable to various forms of PN junctions, which can be various commonly used forms of diodes, or other forms of PN junctions such as parasitic diodes of switching tubes (such as MOSFET), and has a wide range of applications.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1是本发明的实施例的随机一个温度下的PN结的正向导通瞬时电流与正向导通瞬时电压示意图。FIG1 is a schematic diagram of a forward conduction instantaneous current and a forward conduction instantaneous voltage of a PN junction at a random temperature according to an embodiment of the present invention.

图2是本发明实施例1的普通二极管正向导通电流及其正向导通电压波形图。FIG. 2 is a waveform diagram of the forward conduction current and forward conduction voltage of a common diode according to Embodiment 1 of the present invention.

图3是本发明实施例1的普通二极管理想因子及其拟合曲线。FIG. 3 is an ideality factor of a common diode and its fitting curve according to Example 1 of the present invention.

图4是本发明实施例1的普通二极管温度测量误差分析。FIG. 4 is an analysis of the temperature measurement error of a common diode in Example 1 of the present invention.

图5是本发明实施例2的SiC型肖特基二极管理想因子及其拟合曲线。FIG. 5 is an ideality factor of a SiC Schottky diode and its fitting curve according to Example 2 of the present invention.

图6是本发明实施例2的SiC型肖特基二极管温度测量误差分析。FIG. 6 is an analysis of the temperature measurement error of the SiC Schottky diode in Example 2 of the present invention.

图7是本发明实施例3的SiC型MOSFET寄生二极管理想因子及其拟合曲线。FIG. 7 is an ideal factor of a parasitic diode of a SiC MOSFET according to Embodiment 3 of the present invention and its fitting curve.

图8是本发明实施例3的SiC型MOSFET寄生二极管温度测量误差分析。FIG8 is an analysis of the temperature measurement error of the parasitic diode of the SiC MOSFET according to the third embodiment of the present invention.

图9是本发明实施例4的普通MOSFET寄生二极管理想因子及其拟合曲线。FIG. 9 is an ideal factor of a common MOSFET parasitic diode and its fitting curve according to Embodiment 4 of the present invention.

图10是本发明实施例4的普通MOSFET寄生二极管温度测量误差。FIG. 10 is a diagram showing the temperature measurement error of a common MOSFET parasitic diode in Example 4 of the present invention.

具体实施方式DETAILED DESCRIPTION

下面对本发明的较优的实施例作进一步的详细说明。The preferred embodiments of the present invention are described in further detail below.

为了解决现有技术中存在的问题，本发明技术方案考虑了理想因子随温度变化情况，提出了一种与反向饱和电流无关并适用于可变导通电流情况下的PN结测温方法，提高了温度测量精度。同时，本发明提出的PN结测温方法只需对PN结的正向导通电流及正向导通电压分别进行积分，即可实现温度的测量，方法简单，容易操作。In order to solve the problems existing in the prior art, the technical solution of the present invention takes into account the change of the ideal factor with temperature, and proposes a PN junction temperature measurement method that is independent of the reverse saturation current and applicable to variable conduction current, thereby improving the temperature measurement accuracy. At the same time, the PN junction temperature measurement method proposed by the present invention only needs to integrate the forward conduction current and forward conduction voltage of the PN junction respectively to achieve temperature measurement, and the method is simple and easy to operate.

一种PN结测温方法实施过程如下：The implementation process of a PN junction temperature measurement method is as follows:

Step1：选定测温使用的PN结，所述PN结可以为二极管或开关管的寄生二极管。Step 1: Select a PN junction for temperature measurement, where the PN junction can be a diode or a parasitic diode of a switch tube.

根据该PN结的实际使用情况，测定不同温度下PN结的正向导通电流信号ib及正向导通电压信号vf；According to the actual use of the PN junction, the forward conduction current signal i b and the forward conduction voltage signal v f of the PN junction at different temperatures are measured;

Step2：任意选择两个相等时间段Δt1和Δt2，通过SV1＝∫vf1dt，SV2＝∫vf2dt，SI1＝∫ln(ib1)dt，SI2＝∫ln(ib2)dt对两个时间段内的正向导通电压及正向导通电流进行积分，得出SV1，SV2，SI1，SI2；Step 2: Arbitrarily select two equal time periods Δt 1 and Δt 2 , and integrate the forward conduction voltage and forward conduction current in the two time periods through S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt, S I2 =∫ln(i b2 )dt to obtain S V1 , S V2 , S I1 , S I2 ;

Step3：利用

Figure BDA0004037265360000051
求出不同温度下的理想因子；Step 3: Utilization
Figure BDA0004037265360000051
Find the ideality factor at different temperatures;

Step4：利用数据拟合的方法拟合得出

Figure BDA0004037265360000052
拟合关系式中的常数a，b，c；Step 4: Use the data fitting method to fit the
Figure BDA0004037265360000052
The constants a, b, c in the fitting relationship;

Step5：在PN结实际应用系统中，测量其正向导通电流信号及正向导通电压信号，得到正向导通电流、正向导通电压与时间的信号曲线；Step 5: In the actual application system of the PN junction, measure its forward conduction current signal and forward conduction voltage signal to obtain the signal curve of forward conduction current, forward conduction voltage and time;

Step6：选取与步骤2正向导通电流相等的时间段，计算得出Sv11，Sv21，SI11，SI21；Step 6: Select a time period equal to the forward conduction current in step 2 and calculate S v11 , S v21 , S I11 , S I21 ;

Step7：根据

Figure BDA0004037265360000053
计算出m值的大小；Step 7: According to
Figure BDA0004037265360000053
Calculate the value of m;

Step8：根据

Figure BDA0004037265360000054
计算出PN结的温度。Step 8: According to
Figure BDA0004037265360000054
Calculate the temperature of the PN junction.

针对上述实施步骤的分析推理过程如下：The analytical reasoning process for the above implementation steps is as follows:

(1)消除反向饱和电流影响的PN结测温方法(1) PN junction temperature measurement method to eliminate the influence of reverse saturation current

PN结的正向导通电流与正向导通电压之间的关系如式(1)所示：The relationship between the forward conduction current and the forward conduction voltage of the PN junction is shown in formula (1):

Figure BDA0004037265360000061
Figure BDA0004037265360000061

式(1)中，ib为PN结的正向导通电流，Is为反向饱和电流，k为玻尔兹曼常数，q为基本电荷常数，n为理想因子，vf为PN结的正向导通电压，T为热力学温度。当

Figure BDA0004037265360000062
将式(1)简化为式(2)。PN结正向导通电流与正向导通电压示意图如图1所示，在PN结正向导通电流变化的阶段，选择两个相等时间段Δt1和Δt2，其中Δt1时间段内的正向电流及其正向电压分别表示为ib1和vf1，Δt2时间段内的正向电流及其正向电压分别表示为ib2和vf2，则PN结的温度测量推导过程如下：In formula (1), i b is the forward conduction current of the PN junction, Is is the reverse saturation current, k is the Boltzmann constant, q is the basic charge constant, n is the ideal factor, v f is the forward conduction voltage of the PN junction, and T is the thermodynamic temperature.
Figure BDA0004037265360000062
Simplify equation (1) to equation (2). The schematic diagram of the PN junction forward current and forward voltage is shown in Figure 1. In the stage of the PN junction forward current change, two equal time periods Δt 1 and Δt 2 are selected, where the forward current and forward voltage in the Δt 1 time period are respectively expressed as i b1 and v f1 , and the forward current and forward voltage in the Δt 2 time period are respectively expressed as i b2 and v f2 . The temperature measurement derivation process of the PN junction is as follows:

Figure BDA0004037265360000063
Figure BDA0004037265360000063

Figure BDA0004037265360000064
Figure BDA0004037265360000064

Figure BDA0004037265360000065
Figure BDA0004037265360000065

Figure BDA0004037265360000066
Figure BDA0004037265360000066

Figure BDA0004037265360000067
Figure BDA0004037265360000067

Figure BDA0004037265360000068
Figure BDA0004037265360000068

Figure BDA0004037265360000069
Figure BDA0004037265360000069

令SV1＝∫vf1dt，SV2＝∫vf2dt，SI1＝∫ln(ib1)dt，SI2＝∫ln(ib2)dt，将式(8)改写为式(9)，则推导出温度T的表达式如式(10)所示。PN结的反向饱和电流与温度有关，此方法通过对不同时间段中PN结的正向导通电流和正向导通电压分别进行积分后计算温度，消除了反向饱和电流对测温的影响。Let S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt, S I2 =∫ln(i b2 )dt, rewrite equation (8) as equation (9), and derive the expression of temperature T as shown in equation (10). The reverse saturation current of the PN junction is related to the temperature. This method calculates the temperature by integrating the forward conduction current and forward conduction voltage of the PN junction in different time periods, eliminating the influence of the reverse saturation current on the temperature measurement.

Figure BDA0004037265360000071
Figure BDA0004037265360000071

Figure BDA0004037265360000072
Figure BDA0004037265360000072

(2)考虑理想因子随温度变化的PN结测温方法(2) PN junction temperature measurement method considering the ideal factor changing with temperature

根据式(10)，可以推导出理想因子的计算式如式(11)所示。PN结的理想因子随温度变化，不同类型的PN结随温度变化的趋势存在差异，如普通Si型材料的PN结，其理想因子随温度升高而降低，而SiC型的PN结，其理想因子随温度升高而升高，还有部分PN结理想因子随温度变化不大。不同类型的PN结的理想因子随温度的变化均可以表示为反比关系变化，因此，将PN结的理想因子随温度变化的表达式表示为(12)，其中，a，b，c是与测温使用的PN结相关的常数。According to formula (10), the calculation formula of the ideal factor can be derived as shown in formula (11). The ideal factor of the PN junction changes with temperature. There are differences in the trend of different types of PN junctions changing with temperature. For example, the ideal factor of the PN junction of ordinary Si-type materials decreases with increasing temperature, while the ideal factor of the SiC-type PN junction increases with increasing temperature. There are also some PN junctions whose ideal factors do not change much with temperature. The change of the ideal factor of different types of PN junctions with temperature can be expressed as an inverse relationship. Therefore, the expression of the ideal factor of the PN junction changing with temperature is expressed as (12), where a, b, and c are constants related to the PN junction used for temperature measurement.

令

Figure BDA0004037265360000073
则将PN结温度表达式(10)改写为式(13)所示。将式(13)进行化解得出一个如式(14)所示的关于温度T的一元二次方程，实际应用中，该方程的解为正温度值，则方程(14)的正数解即为PN结测量的温度值，因此，PN结测量得出的温度T如式(15)所示。make
Figure BDA0004037265360000073
Then the PN junction temperature expression (10) is rewritten as shown in equation (13). Equation (13) is solved to obtain a quadratic equation about temperature T as shown in equation (14). In practical applications, the solution of this equation is a positive temperature value, and the positive solution of equation (14) is the temperature value measured by the PN junction. Therefore, the temperature T measured by the PN junction is shown in equation (15).

Figure BDA0004037265360000074
Figure BDA0004037265360000074

Figure BDA0004037265360000075
Figure BDA0004037265360000075

Figure BDA0004037265360000076
Figure BDA0004037265360000076

aT2+(ac+b-m)T-mc＝0 (14)aT 2 +(ac+bm)T-mc＝0 (14)

Figure BDA0004037265360000077
Figure BDA0004037265360000077

本发明实施例还公开了一种PN结测温系统，其包括：The embodiment of the present invention also discloses a PN junction temperature measurement system, which includes:

PN结正向导通电流、正向导通电压与时间的曲线获取模块，用于获取不同温度下选定的PN结的正向导通电流信号ib及正向导通电压信号vf，得到不同温度下的正向导通电流、正向导通电压与时间的信号曲线；A PN junction forward current, forward voltage and time curve acquisition module is used to acquire the forward current signal i b and forward voltage signal v f of the selected PN junction at different temperatures, and obtain the signal curves of the forward current, forward voltage and time at different temperatures;

积分模块，用于任意选择两个相等的时间段Δt1和Δt2，对应得到所述PN结在Δt1时间段的正向导通电流信号ib1、正向导通电压信号vf1，以及所述PN结在Δt2时间段的正向导通电流信号ib2、正向导通电压信号vf2，通过SV1＝∫vf1dt、SV2＝∫vf2dt、SI1＝∫ln(ib1)dt、SI2＝∫ln(ib2)dt分别对两个时间段内的正向导通电压及正向导通电流进行积分，得出SV1，SV2，SI1，SI2；An integration module, used for arbitrarily selecting two equal time periods Δt1 and Δt2 , correspondingly obtaining the forward conduction current signal i b1 and the forward conduction voltage signal v f1 of the PN junction in the time period Δt1 , and the forward conduction current signal i b2 and the forward conduction voltage signal v f2 of the PN junction in the time period Δt2 , and integrating the forward conduction voltage and the forward conduction current in the two time periods respectively by S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt, S I2 =∫ln(i b2 )dt, to obtain S V1 , S V2 , S I1 , S I2 ;

理想因子计算模块，用于利用

Figure BDA0004037265360000081
求出不同温度下的理想因子n，其中k为玻尔兹曼常数，q为基本电荷常数，T为热力学温度；Ideality factor calculation module for utilizing
Figure BDA0004037265360000081
Find the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the basic charge constant, and T is the thermodynamic temperature;

数据拟合和常数计算模块，根据理想因子计算模块得到的不同温度下的理想因子n，利用数据拟合的方法，结合

Figure BDA0004037265360000082
式，拟合得出常数a，b，c，其中T为热力学温度；The data fitting and constant calculation module uses the data fitting method and combines the ideal factor n at different temperatures obtained by the ideal factor calculation module.
Figure BDA0004037265360000082
The constants a, b, and c are obtained by fitting, where T is the thermodynamic temperature;

测温信号获取模块，利用所述PN结进行测温，测量通过所述PN结的正向导通电流信号及正向导通电压信号，得到正向导通电流、正向导通电压与时间的信号曲线；A temperature measurement signal acquisition module is used to measure the temperature by using the PN junction, measure the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtain a signal curve of the forward conduction current, the forward conduction voltage and time;

测温计算模块，用于选取与Δt1和Δt2相等的时间段，计算得出Sv11，Sv21，SI11，SI21；The temperature measurement calculation module is used to select a time period equal to Δt 1 and Δt 2 , and calculate S v11 , S v21 , S I11 , S I21 ;

PN结温度计算模块，根据

Figure BDA0004037265360000083
计算出m值的大小，其中k为玻尔兹曼常数，q为基本电荷常数；PN junction temperature calculation module, according to
Figure BDA0004037265360000083
Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

根据

Figure BDA0004037265360000084
计算出实际的PN结的温度T。according to
Figure BDA0004037265360000084
Calculate the actual PN junction temperature T.

所述PN结为二极管或开关管的寄生二极管。The PN junction is a diode or a parasitic diode of a switch tube.

本发明实施例还公开了一种计算机可读存储介质，所述计算机可读存储介质包括计算机程序，当计算机程序在电子设备上运行时，使得所述电子设备执行如上所述的PN结测温方法。The embodiment of the present invention further discloses a computer-readable storage medium, wherein the computer-readable storage medium includes a computer program. When the computer program is executed on an electronic device, the electronic device executes the PN junction temperature measurement method as described above.

本发明实施例还公开了一种PN结测温装置，包括：测试电路、存储器、处理器及存储在所述存储器上并可在所述处理器上运行的计算机程序，所述处理器执行所述计算机程序时，实现如上所述的PN结测温方法。An embodiment of the present invention further discloses a PN junction temperature measurement device, comprising: a test circuit, a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the PN junction temperature measurement method described above is implemented.

下面应用上述的PN结测温方法进行实际的测温验证。The above-mentioned PN junction temperature measurement method is applied to carry out actual temperature measurement verification.

实施例1Example 1

普通二极管测温实例。Example of temperature measurement using a common diode.

利用上述PN结测温方法，任意选择一个型号为MUR3060WT的普通二极管用于测温，向二极管加入的正向导通电流及其正向导通电压波形如图2所示，加入电流信号的频率为5kHz。根据不同温度下的二极管正向导通电压和正向导通电流，计算出的理想因子及其拟合曲线如图3所示，该二极管理想因子随温度的升高而降低，该拟合曲线得出的常数a＝1.38，b＝3.074，c＝-291.5。利用本发明提出的方法，结合拟合曲线得出的常数，采用该二极管测温得出的误差如图4所示，这种测温方法得出的温度测量误差很小，各温度下的温度测量误差在3％以内，说明本发明提出的方法是可行的。Using the above PN junction temperature measurement method, a common diode of model MUR3060WT is randomly selected for temperature measurement. The forward current and forward voltage waveform added to the diode are shown in Figure 2, and the frequency of the added current signal is 5kHz. According to the forward voltage and forward current of the diode at different temperatures, the ideal factor and its fitting curve are calculated as shown in Figure 3. The ideal factor of the diode decreases with the increase of temperature. The constants obtained by the fitting curve are a=1.38, b=3.074, and c=-291.5. Using the method proposed by the present invention, combined with the constants obtained by the fitting curve, the error obtained by using the diode temperature measurement is shown in Figure 4. The temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, indicating that the method proposed by the present invention is feasible.

实施例2Example 2

SiC型肖特基二极管测温实例。Example of temperature measurement using a SiC Schottky diode.

利用上述PN结测温方法，任意选择一个型号为C4D40120的SiC型肖特基二极管用于测温，SiC型肖特基二极管中加入电流，电流信号的频率为2kHz，测量其二极管正向导通电压信号。根据不同温度下的二极管正向导通电压和正向导通电流，计算出的理想因子及其拟合曲线如图5所示，该二极管理想因子随温度的升高而升高，该拟合曲线得出的常数a＝1.107，b＝-2.216，c＝-276.1。利用本发明提出的方法，结合拟合曲线得出的常数，采用该二极管测温得出的误差如图6所示，这种测温方法得出的温度测量误差很小，各温度下的温度测量误差在3％以内，说明本发明提出的方法是可行的。Using the above PN junction temperature measurement method, a SiC Schottky diode of model C4D40120 is randomly selected for temperature measurement. Current is added to the SiC Schottky diode, and the frequency of the current signal is 2kHz. The forward conduction voltage signal of the diode is measured. According to the forward conduction voltage and forward conduction current of the diode at different temperatures, the calculated ideal factor and its fitting curve are shown in Figure 5. The ideal factor of the diode increases with the increase of temperature. The constants obtained by the fitting curve are a=1.107, b=-2.216, and c=-276.1. Using the method proposed by the present invention, combined with the constants obtained by the fitting curve, the error obtained by using the diode temperature measurement is shown in Figure 6. The temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, indicating that the method proposed by the present invention is feasible.

实施例3Example 3

SiC型MOSFET寄生二极管测温实例。Example of SiC MOSFET parasitic diode temperature measurement.

利用上述PN结测温方法，任意选择一个型号为C2M0080120D的SiC型MOSFET寄生二极管用于测温，将MOSFET的GS两端的电压设为-6V，以保证其沟道完全关闭，向其寄生二极管中加入电流，电流信号的频率为1.5kHz，测量其寄生二极管正向导通电压信号。根据不同温度下的二极管正向导通电压和正向导通电流信号，计算出的理想因子及其拟合曲线如图7所示，该二极管理想因子随温度的升高而升高，该拟合曲线得出的常数a＝1.244，b＝-2.851，c＝-290.9。利用本发明提出的方法，结合拟合曲线得出的常数，采用该二极管测温得出的误差如图8所示，这种测温方法得出的温测度量误差很小，各温度下的温度测量误差在3％以内，说明本发明提出的方法是可行的。Using the above PN junction temperature measurement method, a SiC MOSFET parasitic diode of model C2M0080120D is randomly selected for temperature measurement, and the voltage across the GS of the MOSFET is set to -6V to ensure that its channel is completely closed. Current is added to its parasitic diode, and the frequency of the current signal is 1.5kHz. The forward conduction voltage signal of the parasitic diode is measured. According to the forward conduction voltage and forward conduction current signals of the diode at different temperatures, the calculated ideal factor and its fitting curve are shown in Figure 7. The ideal factor of the diode increases with the increase of temperature. The constants obtained by the fitting curve are a=1.244, b=-2.851, and c=-290.9. Using the method proposed by the present invention, combined with the constants obtained by the fitting curve, the error obtained by using the diode temperature measurement is shown in Figure 8. The temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, indicating that the method proposed by the present invention is feasible.

实施例4Example 4

普通MOSFET寄生二极管测温实例。Example of temperature measurement of common MOSFET parasitic diode.

利用上述PN结测温方法，任意选择一个型号为IRF520的普通MOSFET寄生二极管用于测温，向其寄生二极管中加入电流，电流信号的频率为10kHz，测量其寄生二极管正向导通电压信号。根据不同温度下的寄生二极管正向导通电压和正向导通电流信号，计算出的理想因子及其拟合曲线如图9所示，该寄生二极管理想因子随温度变化不大，该拟合曲线得出的常数a＝1.019，b＝0.211，c＝-29.49。利用本发明提出的方法，结合拟合曲线得出的常数，采用该寄生二极管测温得出的误差如图10所示，这种测温方法得出的温度测量误差很小，各温度下的温度测量误差在5％以内，说明本发明提出的方法是可行的。Using the above PN junction temperature measurement method, a common MOSFET parasitic diode of model IRF520 is randomly selected for temperature measurement, and current is added to the parasitic diode. The frequency of the current signal is 10kHz, and the forward conduction voltage signal of the parasitic diode is measured. According to the forward conduction voltage and forward conduction current signal of the parasitic diode at different temperatures, the ideal factor calculated and its fitting curve are shown in Figure 9. The ideal factor of the parasitic diode does not change much with temperature. The constants obtained by the fitting curve are a=1.019, b=0.211, and c=-29.49. Using the method proposed by the present invention, combined with the constants obtained by the fitting curve, the error obtained by temperature measurement using the parasitic diode is shown in Figure 10. The temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 5%, indicating that the method proposed by the present invention is feasible.

以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims (6)

1. The PN junction temperature measurement method is characterized by comprising the following steps of:
step S1, selecting PN junctions for temperature measurement, and measuring forward conduction current signals i of the PN junctions at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
step S2, arbitrarily selecting two equal time periods Deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 ；
Step S3, utilize
Figure FDA0004037265350000011
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
step S4, combining the ideal factors n at different temperatures obtained in the step S3 by using a data fitting method
Figure FDA0004037265350000012
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
s5, measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
step S6, selecting a time period equal to the forward current in step S2, and calculating to obtain S v11 ，S v21 ，S I11 ，S I21 ；
Step S7, according to
Figure FDA0004037265350000013
Calculating the value of m, wherein k is Boltzmann constant, and q is basic charge constant;
step S8, according to
Figure FDA0004037265350000014
The actual PN junction temperature T is calculated.
2. The PN junction temperature measurement method of claim 1, wherein: the PN junction is a parasitic diode of a diode or a switching tube.
3. A PN junction temperature measurement system, comprising:
the signal curve acquisition module is used for acquiring forward conduction current signals i of the PN junction selected at different temperatures b Forward on voltage signal v f Obtaining signal curves of forward conduction current, forward conduction voltage and time at different temperatures;
an integrating module for arbitrarily selecting two equal time periods deltat 1 And Deltat 2 Correspondingly obtaining the PN junction at delta t 1 Forward conduction current signal i of time period b1 Forward on voltage signal v f1 And the PN junction is at Deltat 2 Forward conduction current signal i of time period b2 Forward on voltage signal v f2 Through S V1 ＝∫v f1 dt、S V2 ＝∫v f2 dt、S I1 ＝∫ln(i b1 )dt、S I2 ＝∫ln(i b2 ) dt integrates the forward conduction voltage and the forward conduction current in two time periods respectively to obtain S V1 ，S V2 ，S I1 ，S I2 ；
An ideality factor calculation module for utilizing
Figure FDA0004037265350000021
Solving ideal factors n at different temperatures, wherein k is a Boltzmann constant, q is a basic charge constant, and T is a thermodynamic temperature;
the data fitting and constant calculating module combines the data fitting method according to the ideal factors n at different temperatures obtained by the ideal factor calculating module
Figure FDA0004037265350000022
Fitting a relation, and obtaining constants a, b and c by fitting, wherein T is the thermodynamic temperature;
the temperature measurement signal acquisition module is used for measuring temperature by utilizing the PN junction, and measuring forward conduction current signals and forward conduction voltage signals passing through the PN junction to obtain signal curves of forward conduction current, forward conduction voltage and time;
the temperature measurement calculation module is used for selecting and delta t 1 And Deltat 2 S is calculated in a period of time when the forward conduction current is equal v11 ，S v21 ，S I11 ，S I21 ；
PN junction temperature calculation module according to
Figure FDA0004037265350000031
Calculating the value of mWherein k is a boltzmann constant and q is a fundamental charge constant;
according to
Figure FDA0004037265350000032
The actual PN junction temperature T is calculated.
4. The PN junction temperature measurement system of claim 3, wherein: the PN junction is a parasitic diode of a diode or a switching tube.
5. A computer readable storage medium, characterized in that the computer readable storage medium comprises a computer program which, when run on an electronic device, causes the electronic device to perform the PN junction thermometry method of claim 1 or 2.
6. A PN junction temperature measuring device, comprising: test circuit, memory, processor and stored on said memory and computer program executable on said processor, said processor implementing the PN junction temperature measurement method according to claim 1 or 2 when executing said computer program.
CN202310006786.7A 2023-01-04 2023-01-04 PN junction temperature measuring method, system and computer-readable storage medium Pending CN116106712A (en)

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