CN116097426A - 芯片及其制作方法、电子设备 - Google Patents

芯片及其制作方法、电子设备 Download PDF

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Publication number
CN116097426A
CN116097426A CN202080104507.5A CN202080104507A CN116097426A CN 116097426 A CN116097426 A CN 116097426A CN 202080104507 A CN202080104507 A CN 202080104507A CN 116097426 A CN116097426 A CN 116097426A
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CN
China
Prior art keywords
semiconductor device
cap
chip
substrate
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080104507.5A
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English (en)
Inventor
李伟
徐慧龙
姚艳龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN116097426A publication Critical patent/CN116097426A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors

Abstract

本申请提供了一种芯片及其制作方法、电子设备，涉及芯片技术领域，能够降低芯片内部的半导体器件受外部应力的影响。该芯片衬底、器件层、帽盖、侧墙；其中，器件层中设置有半导体器件，且器件层在背离衬底一侧的表面、位于半导体器件的周围设置有隔离槽；帽盖与器件层相对设置，且帽盖位于器件层背离衬底的一侧；侧墙设置于帽盖与器件层之间，且侧墙围绕半导体器件设置，隔离槽位于侧墙的内侧。

Description

PCT国内申请，说明书已公开。

Claims (11)

  1. PCT国内申请，权利要求书已公开。
CN202080104507.5A 2020-09-25 2020-09-25 芯片及其制作方法、电子设备 Pending CN116097426A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/117774 WO2022061721A1 (zh) 2020-09-25 2020-09-25 芯片及其制作方法、电子设备

Publications (1)

Publication Number Publication Date
CN116097426A true CN116097426A (zh) 2023-05-09

Family

ID=80846022

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080104507.5A Pending CN116097426A (zh) 2020-09-25 2020-09-25 芯片及其制作方法、电子设备

Country Status (3)

Country Link
EP (1) EP4210096A4 (zh)
CN (1) CN116097426A (zh)
WO (1) WO2022061721A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115057407A (zh) * 2022-04-29 2022-09-16 潍坊歌尔微电子有限公司 Mems产品及电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3494357B2 (ja) * 1999-01-28 2004-02-09 関西日本電気株式会社 半導体装置
CN103968972A (zh) * 2014-04-30 2014-08-06 歌尔声学股份有限公司 压力传感器
US10023461B2 (en) * 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof
CN107892268B (zh) * 2017-11-13 2023-07-14 苏州敏芯微电子技术股份有限公司 压力传感器及其制造方法

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Publication number Publication date
WO2022061721A1 (zh) 2022-03-31
EP4210096A4 (en) 2023-11-08
EP4210096A1 (en) 2023-07-12

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