CN116093095A - Optocoupler isolator and packaging process thereof - Google Patents

Optocoupler isolator and packaging process thereof Download PDF

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Publication number
CN116093095A
CN116093095A CN202211609882.2A CN202211609882A CN116093095A CN 116093095 A CN116093095 A CN 116093095A CN 202211609882 A CN202211609882 A CN 202211609882A CN 116093095 A CN116093095 A CN 116093095A
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integrated circuit
chip
layer
passivation layer
photodiode
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CN116093095B (en
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姚玉峰
陶骞
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Lafley Technology Suzhou Co ltd
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Lafley Technology Suzhou Co ltd
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Priority to PCT/CN2023/089365 priority patent/WO2024124763A1/en
Publication of CN116093095A publication Critical patent/CN116093095A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

The invention relates to an optical coupling isolator and a packaging process thereof, wherein the optical coupling isolator comprises a receiving integrated circuit and a transmitting integrated circuit; the packaging process of the optical coupling isolator comprises the steps that a first passivation layer, a first rewiring layer and a second passivation layer are arranged at the bottom of a receiving integrated circuit from top to bottom, a third passivation layer is arranged at the top of the receiving integrated circuit, and copper is filled in an opening hole on the third passivation layer; bonding the transmitting integrated circuit and the receiving integrated circuit into a whole to form an optical coupling isolation module, wherein an isolation layer is arranged between the transmitting integrated circuit and the receiving integrated circuit; and a fifth passivation layer, a second redistribution layer and a fourth passivation layer are sequentially arranged on the surface of the optical coupling isolation module from top to bottom. The invention can conveniently package the optical coupler isolator, does not need a special process, obviously reduces the production cost, realizes complete physical isolation, has higher isolation performance, small size and higher reliability.

Description

Optocoupler isolator and packaging process thereof
Technical Field
The invention relates to the technical field of isolators, in particular to an optical coupling isolator and a packaging process thereof.
Background
The optocoupler isolation circuit enables no direct electrical connection between the two isolated circuits, and mainly prevents interference caused by the electrical connection, particularly between the low-voltage control circuit and an external high-voltage circuit. The main components of the optocoupler are a light emitting device and a photosensitive device, the light emitting device is generally an IRLED, the light receiving device is of the type of a photosensitive diode, a phototriode, a Darlington tube, an optical integrated circuit and the like, and in a high-frequency switching power supply, the requirement on the response speed of the optocoupler is very high, so that the high-speed type optocoupler with relatively quick response is generally adopted, and the delay time is within 500 nS. When the optical coupler is used for transmitting analog signals or direct current signals, the linear optical coupler is adopted to reduce distortion, and when digital switch signals are transmitted, the requirement on linearity is not strict.
The conventional optocoupler packaging process generally includes the following steps: step one: fixing the crystal on the metal frame; step two: welding gold wires on the metal frame; step three: the silica gel is dotted on the upper part and the periphery of the chip and the welding line; step four: placing a polyimide film (Kapton Tape) over the silica gel; step five: the metal frame for fixing the LED chip is turned over, so that the LED is opposite to the photosensitive area PD of the chip below (the process is a non-standard process, a customized machine needs to be developed for execution, or the process is turned over manually, the efficiency is low, and the yield is low); step six: injection molding; step seven: the output pins are bent and formed, the seven steps are complicated in process, wherein the third step, the fourth step and the fifth step are non-standard processes, or a customized machine is required to be developed to execute the process, so that the production cost is high, or manual operation is required, the working efficiency is low, and the product yield is low.
Therefore, there is an urgent need to provide an optocoupler isolator and a packaging process thereof to overcome the above technical drawbacks of the prior art.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the technical defects in the prior art, and provide the optical coupler isolator and the packaging process thereof, which can conveniently package the optical coupler isolator without special process, obviously reduce the production cost, realize complete physical isolation, have higher isolation performance, small size and higher reliability.
In order to solve the technical problems, the invention provides an optocoupler isolator packaging process, which comprises a receiving integrated circuit and a transmitting integrated circuit, wherein the receiving integrated circuit comprises a receiving chip with photodiode induction, the transmitting integrated circuit comprises a photodiode transmitting chip and an ASIC chip, and the ASIC chip is connected with the photodiode transmitting chip;
the packaging process of the optical coupler isolator comprises the following steps of:
s10: manufacturing a receiving integrated circuit and a transmitting integrated circuit;
s20: a first passivation layer, a first rewiring layer and a second passivation layer are sequentially arranged at the bottom of the receiving integrated circuit from top to bottom, a third passivation layer is arranged at the top of the receiving integrated circuit, copper is filled in holes on the third passivation layer, a fourth rewiring layer is arranged on the third passivation layer, and the output of the photodiode receiving chip is connected with the first rewiring layer at the bottom through the copper filled holes;
s30: inverting the transmitting integrated circuit on the receiving integrated circuit, and bonding the transmitting integrated circuit and the receiving integrated circuit into a whole to form an optical coupling isolation module, wherein an isolation layer is arranged between the transmitting integrated circuit and the receiving integrated circuit;
s40: and a fifth passivation layer, a second redistribution layer and a fourth passivation layer are sequentially arranged on the upper surface of the optical coupling isolation module from top to bottom.
In one embodiment of the present invention, in S10, a method of fabricating a receiving integrated circuit includes:
arranging a receiving chip with photodiode induction on a carrier substrate, and performing injection molding;
and removing the carrier substrate after injection molding, and then opening holes on the first injection molding body to fill copper.
In one embodiment of the present invention, in S10, a method of fabricating a transmitting integrated circuit includes:
arranging a photodiode emission chip and an ASIC chip on a carrier substrate, and performing injection molding;
removing the carrier substrate after injection molding, and then opening holes on the second injection molding body to fill copper;
a sixth passivation layer 5 is arranged on the upper surfaces of the photodiode emission chip, the ASIC chip and the second injection molding body, a third rewiring layer is arranged on the sixth passivation layer, two poles of the photodiode emission chip are connected with the driving output of the ASIC chip through copper filling of an opening on the second injection molding body and the second rewiring layer, and the output of the ASIC chip is connected with the first rewiring layer at the bottom through copper filling of a through hole at the edge of the isolation layer, the third passivation layer and the opening of the first injection molding body; wherein the copper filling of the through holes at the edge of the isolation layer does not affect the isolation performance of the isolation layer on the transmission and the reception.
0 in one embodiment of the present invention, in S30, the transmitting integrated circuit and the receiving integrated circuit are bonded together by means of thermo-compression or other bonding, to form an optocoupler isolation module, in which signals transmitted by the photodiode transmitting chip are received by the receiving chip with photodiode sensing through the isolation layer.
In one embodiment of the invention, the through-holes of the emissive integrated circuit do not penetrate the isolation layer, 5 and the through-holes penetrate the second injection-molded body, connecting the two poles of the photodiode emissive chip and the drive output of the ASIC chip.
In one embodiment of the present invention, when a plurality of optocoupler channels are encapsulated, partition walls with communication are disposed on the isolation layer, the third passivation layer and the sixth passivation layer, and light interference of the photodiode emission chip adjacent to the channels is isolated by the partition walls.
0 in one embodiment of the invention, the partition cavity is filled with an organic material capable of blocking light.
In addition, the invention further provides an optical coupler isolator which is manufactured according to the optical coupler isolator packaging process.
Compared with the prior art, the technical scheme of the invention has the following advantages:
1. the optocoupler isolator and the packaging process thereof can conveniently package the optocoupler isolator, do not need a special process, remarkably reduce the production cost, realize complete physical isolation, have higher isolation performance, small size and higher reliability;
2. the optocoupler isolator and the packaging process thereof allow one or more optocoupler channels to be packaged in one device, and the isolation of light crosstalk can be effectively realized among the channels.
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings, in which
Fig. 1 is a schematic diagram of an optocoupler isolator packaging process according to the present invention.
Fig. 2 is a schematic structural diagram of an optocoupler isolator according to the present invention.
Fig. 3 is a schematic structural diagram of an optocoupler isolator according to the present invention.
Fig. 4 is a schematic diagram of a product structure of an optocoupler isolation module of the present invention using conventional packaging.
Wherein reference numerals are as follows: 1. receiving an integrated circuit; 2. a receiving chip; 3. a transmitting integrated circuit; 4. a photodiode emission chip; 5. an ASIC chip; 6. a first passivation layer; 7. a second passivation layer; 8. a third passivation layer; 9. a fourth passivation layer; 10. a fifth passivation layer; 11. a sixth passivation layer; 12. a first rewiring layer; 13. a second rewiring layer; 14. a third wiring layer; 15. a fourth rewiring layer; 16. an isolation layer; 17. a first injection body; 18. partition walls; 19. and a second injection-molded body.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Referring to fig. 1, an embodiment of the present invention provides an optocoupler isolator packaging process, where the optocoupler isolator includes a receiving integrated circuit 1 and a transmitting integrated circuit 3, the receiving integrated circuit 1 includes a receiving chip 2 with photodiode sensing, the transmitting integrated circuit 3 includes a photodiode transmitting chip 4 and an ASIC chip 5, and the ASIC chip 5 is connected to the photodiode transmitting chip 4; the method comprises the steps of carrying out a first treatment on the surface of the The packaging process of the optical coupling isolator comprises the following steps of:
s10: manufacturing a receiving integrated circuit 1 and a transmitting integrated circuit 3;
s20: a first passivation layer 6, a first rewiring layer 12 and a second passivation layer 7 are sequentially arranged at the bottom of the receiving integrated circuit 1 from top to bottom, a third passivation 5 layer 8 is arranged at the top of the receiving integrated circuit 1, copper is filled in holes on the third passivation layer 8, a fourth rewiring layer 15 is arranged on the third passivation layer 8, and the output of the receiving chip 2 with photodiode induction is connected with the first rewiring layer 12 at the bottom through the copper filled holes; the method comprises the steps of carrying out a first treatment on the surface of the
S30: inverting the transmitting integrated circuit 3 on the receiving integrated circuit 1, and bonding the transmitting integrated circuit 3 and the receiving integrated circuit 1 into a whole to form an optical coupling isolation module, wherein an isolation layer 16 is arranged between the transmitting integrated circuit 30 and the receiving integrated circuit 1;
s40: a fifth passivation layer 10, a second redistribution layer 13 and a fourth passivation layer 9 are sequentially arranged on the upper surface of the optocoupler isolation module from top to bottom.
The packaging process of the optical coupler isolator can conveniently package the optical coupler isolator, does not need a special process, remarkably reduces the production cost, realizes complete physical 5 isolation, has higher isolation performance, small size and higher reliability.
In S10, the method for manufacturing the receiving integrated circuit 1 includes: a receiving chip 2 with photodiode induction is arranged on a carrier substrate and injection molding is carried out; after injection molding, the carrier substrate is removed and then the first injection-molded body 17 is perforated with copper.
Similarly, in S10, the method of fabricating the transmitting integrated circuit 3 includes: arranging a photodiode emission 0 chip 4 and an ASIC chip 5 on a carrier substrate, and performing injection molding; removing the carrier substrate after injection molding, and then punching holes on the second injection molding body 19 to fill copper; a sixth passivation layer 11 is arranged on the upper surfaces of the photodiode emission chip 4, the ASIC chip 5 and the second injection molding body 19, a third wiring layer 14 is arranged on the sixth passivation layer 11, and copper is filled and the second redistribution is carried out through the opening on the second injection molding body 19
The line layer 13 connects the two poles of the photodiode emission chip 4 with the driving output of the ASIC chip 5, and connects the output of the ASIC chip with the first rewiring layer 12 at the bottom through copper filling of the through hole at the edge of the isolation layer 16, copper filling of the third passivation layer 8 and the opening of the first injection molding body 17; wherein the copper filling of the through holes at the edge of the isolation layer does not affect the isolation performance of the isolation layer on the transmission and the reception.
In S30, the transmitting integrated circuit 3 and the receiving integrated circuit 1 are bonded together by a thermal pressing method or other bonding methods, so as to form an optocoupler isolation module. In the optocoupler isolation module, the signal emitted by the photodiode emitting chip 4 is received by the receiving chip 2 with photodiode induction through the isolation layer 16.
Referring to fig. 2, as a preferred embodiment, the isolation layer 16 is a transparent isolation layer 16, the through hole of the emitting integrated circuit 3 does not penetrate through the transparent isolation layer 16, and the through hole penetrates through the second injection molding body 19 of the emitting integrated circuit 3 to bring the pad signal of the ASIC chip 5 to the upper side of the whole optocoupler isolation module, which ensures the integrity of the transparent isolation layer 16, and no metal penetrates through the transparent isolation layer 16, so that the isolation performance of higher voltage can be realized.
The re-wiring layers respectively form bonding pads at different layers, and the bonding pads are connected with the metal frame through gold wires, so that the optocoupler isolation module can be manufactured by adopting a traditional packaging process. The pins of the metal frame are made to be higher, so that the length of the gold wires can be reduced, the stability is improved, the cost is reduced, and the metal frame is shown in FIG. 4.
Referring to fig. 3, in an embodiment of the present invention, when a plurality of optocoupler channels are encapsulated, partition walls 18 are disposed on the isolation layer 16 and the third passivation layer 8, where the partition walls 18 are made of an organic material capable of blocking light, and the partition walls 18 isolate light interference of the photodiode emitting chips 4 adjacent to the channels, so as to realize multi-channel isolation.
The packaging technology of the optical coupler isolator allows one or more optical coupler channels to be packaged in one device, and the isolation of light crosstalk can be effectively realized among the channels.
Corresponding to the embodiment of the optical coupling isolator packaging process, the invention further provides an optical coupling isolator which is manufactured according to the optical coupling isolator packaging process.
The receiving integrated circuit 1 includes a receiving chip 2 with photodiode induction, the receiving chip 2 with photodiode induction is disposed on a carrier substrate and injection-molded, the carrier substrate is removed after injection-molding, and then copper is filled in the first injection-molded body 17 through holes.
Similarly, in S10, the method of fabricating the transmitting integrated circuit 3 includes: arranging a photodiode emission chip 4 and an ASIC chip 5 on a carrier substrate, and performing injection molding; removing the carrier substrate after injection molding, and then punching holes on the second injection molding body 19 to fill copper; a sixth passivation layer 11 is provided on the upper surfaces of the photodiode emission chip 4, the IC chip 5 and the second injection molding body 19, and a third redistribution layer 14 is provided on the sixth passivation layer 11, and the two electrodes of the photodiode emission chip 4 and the driving output of the ASIC chip 5 are connected through the copper filling and the second redistribution layer 13 of the opening on the second injection molding body 19. And copper is filled through the through holes at the edge of the isolation layer, the third passivation layer 8 and the first injection molding body 17 are opened, so that the output of the ASIC chip is connected with the first rewiring layer 12 at the bottom. Wherein the copper filling of the through holes at the edge of the isolation layer does not affect the isolation performance of the isolation layer on the transmission and the reception.
Wherein, the transmitting integrated circuit 3 and the receiving integrated circuit 1 are adhered into a whole by a hot pressing mode or other bonding modes to form the optical coupling isolation module. In the optocoupler isolation module, the signal emitted by the photodiode emitting chip 4 is received by the receiving chip 2 with photodiode induction through the isolation layer 16.
Referring to fig. 2, as a preferred embodiment, the isolation layer 16 is a transparent isolation layer 16, the through hole of the transmitting integrated circuit 3 does not penetrate through the transparent isolation layer 16, and the through hole penetrates through the second injection molding body 19 of the transmitting integrated circuit 3 to bring the pad signal of the ASIC chip 5 to the upper side of the whole optocoupler isolation module block, which ensures the integrity of the transparent isolation layer 16, and no metal penetrates through the transparent isolation layer 16, thereby realizing isolation performance of higher voltage.
The re-wiring layers respectively form bonding pads at different layers, and the bonding pads are connected with the metal frame through gold wires, so that the optocoupler isolation module can be manufactured by adopting a traditional packaging process. The pins of the metal frame are made to be higher, so that the length of the gold wires can be reduced, the stability is improved, the cost is reduced, and the metal frame is shown in FIG. 4.
Referring to fig. 3, in an embodiment of the present invention, when a plurality of optocoupler channels are encapsulated, a partition wall 18 with a connection is disposed on the isolation layer 16 and the third passivation layer 8, the partition wall 18 is made of an organic material capable of blocking light, such as epoxy, and the light interference of the photodiode emitting chip 4 adjacent to the channels is isolated by the partition wall 18, so as to realize multi-channel isolation.
An optocoupler isolator of this embodiment is manufactured by the foregoing optocoupler isolator packaging process, and therefore, the specific implementation of the optocoupler isolator can be seen from the foregoing example portion of the optocoupler isolator packaging process, so, the specific implementation of the optocoupler isolator can be referred to the description of the corresponding examples of the various portions, which is not further described herein.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.

Claims (8)

1. An optocoupler isolator packaging process is characterized in that: the optical coupling isolator comprises a receiving integrated circuit and a transmitting integrated circuit, wherein the receiving integrated circuit comprises a receiving chip with photodiode induction, the transmitting integrated circuit comprises a photodiode transmitting chip and an ASIC chip, and the ASIC chip is connected with the photodiode transmitting chip;
the packaging process of the optical coupler isolator comprises the following steps of:
s10: manufacturing a receiving integrated circuit and a transmitting integrated circuit;
s20: a first passivation layer, a first rewiring layer and a second passivation layer are sequentially arranged at the bottom of the receiving integrated circuit from top to bottom, a third passivation layer is arranged at the top of the receiving integrated circuit, copper is filled in holes on the third passivation layer, a fourth rewiring layer is arranged on the third passivation layer, and the output of the receiving chip with photodiode induction is connected with the first rewiring layer at the bottom through the copper filled holes;
s30: inverting the transmitting integrated circuit on the receiving integrated circuit, and bonding the transmitting integrated circuit and the receiving integrated circuit into a whole to form an optical coupling isolation module, wherein an isolation layer is arranged between the transmitting integrated circuit and the receiving integrated circuit;
s40: and a fifth passivation layer, a second redistribution layer and a fourth passivation layer are sequentially arranged on the upper surface of the optical coupling isolation module from top to bottom.
2. The optocoupler isolator packaging process of claim 1, wherein: in S10, the method of fabricating a receiving integrated circuit includes:
arranging a receiving chip with photodiode induction on a carrier substrate, and performing injection molding;
and removing the carrier substrate after injection molding, and then opening holes on the first injection molding body to fill copper.
3. The optocoupler isolator packaging process of claim 2, wherein: in S10, the method of fabricating a transmitting integrated circuit includes:
arranging a photodiode emission chip and an ASIC chip on a carrier substrate, and performing injection molding;
removing the carrier substrate after injection molding, and then opening holes on the second injection molding body to fill copper;
and a sixth passivation layer is arranged on the upper surfaces of the photodiode emission chip, the ASIC chip and the second injection molding body, a third rewiring layer is arranged on the sixth passivation layer, the two poles of the photodiode emission chip are connected with the driving output of the ASIC chip through copper filling of the opening holes on the second injection molding body and the second rewiring layer, and the output of the ASIC chip is connected with the first rewiring layer at the bottom through copper filling of the through holes at the edge of the isolation layer, copper filling of the third passivation layer and the opening holes of the first injection molding body.
4. The optocoupler isolator packaging process of claim 1, wherein: in S30, the transmitting integrated circuit and the receiving integrated circuit are bonded together to form an optocoupler isolation module, in which a signal transmitted by the photodiode transmitting chip passes through the isolation layer and is received by the receiving chip with photodiode induction.
5. The process for packaging an optocoupler isolator according to claim 4, wherein: the through hole of the emission integrated circuit does not penetrate through the isolation layer, and the through hole penetrates through the second injection molding body to connect the two poles of the photodiode emission chip and the driving output of the ASIC chip.
6. The optocoupler isolator packaging process of claim 1, wherein: and when the multiple optocoupler channels are packaged, partition walls with communication are arranged on the isolation layer, the third passivation layer and the sixth passivation layer, and light interference of the photodiode emitting chips adjacent to the channels is isolated through the partition walls.
7. The optocoupler isolator packaging process of claim 6, wherein: the partition wall is an organic material having a capability of blocking light.
8. An optical coupling isolator, characterized in that: the optocoupler isolator is manufactured according to the optocoupler isolator packaging process of any one of claims 1 to 7.
CN202211609882.2A 2022-12-14 2022-12-14 Optocoupler isolator and packaging process thereof Active CN116093095B (en)

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PCT/CN2023/089365 WO2024124763A1 (en) 2022-12-14 2023-04-20 Optoisolator and packaging process therefor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024124763A1 (en) * 2022-12-14 2024-06-20 莱弗利科技(苏州)有限公司 Optoisolator and packaging process therefor

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1870236A (en) * 2005-05-26 2006-11-29 宏齐科技股份有限公司 Manufacturing method of photoelectric chip double-chip substrate packaging structure with control chip
US20090289265A1 (en) * 2008-04-07 2009-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and method of manufacturing an electronic device
CN103972247A (en) * 2014-05-20 2014-08-06 厦门大学 Silica-based uniwafer optoelectronic integration receiving chip used for automatic electricity meter reading system
CN105793727A (en) * 2013-12-05 2016-07-20 ams有限公司 Optical sensor arrangement and method of producing an optical sensor arrangement
CN107040318A (en) * 2015-10-21 2017-08-11 卢克斯特拉有限公司 Method and system for communication
CN108349131A (en) * 2015-11-06 2018-07-31 塔科图特科有限责任公司 Multilayered structure and relative manufacturing process for electronic device
CN108369945A (en) * 2015-12-01 2018-08-03 英特尔公司 The integrated circuit configured with chip on chip on chip and substrate
CN110648927A (en) * 2018-06-27 2020-01-03 台湾积体电路制造股份有限公司 Integrated photonic package, and methods of forming the same
CN112582387A (en) * 2019-08-01 2021-03-30 文和文森斯设备公司 Microstructure enhanced absorption photosensitive device
CN113921476A (en) * 2020-06-23 2022-01-11 莱弗利科技(苏州)有限公司 Miniature high-integration infrared proximity and ambient light brightness sensor and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3676136B2 (en) * 1999-08-23 2005-07-27 シャープ株式会社 Optical coupling element
US6864509B2 (en) * 2002-02-06 2005-03-08 Eugene Robert Worley Packaging optically coupled integrated circuits using flip-chip methods
US9236521B2 (en) * 2012-10-30 2016-01-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler having lens layer
US20140212085A1 (en) * 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
CN103745969B (en) * 2014-01-28 2016-08-17 中国工程物理研究院电子工程研究所 Optical communication interconnection TXV 3D integration packaging and method for packing
US10276490B2 (en) * 2017-07-20 2019-04-30 Avago Technologies International Sales Pte. Limited Isolation devices with faraday shields
CN116093095B (en) * 2022-12-14 2024-06-14 莱弗利科技(苏州)有限公司 Optocoupler isolator and packaging process thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1870236A (en) * 2005-05-26 2006-11-29 宏齐科技股份有限公司 Manufacturing method of photoelectric chip double-chip substrate packaging structure with control chip
US20090289265A1 (en) * 2008-04-07 2009-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and method of manufacturing an electronic device
CN105793727A (en) * 2013-12-05 2016-07-20 ams有限公司 Optical sensor arrangement and method of producing an optical sensor arrangement
CN103972247A (en) * 2014-05-20 2014-08-06 厦门大学 Silica-based uniwafer optoelectronic integration receiving chip used for automatic electricity meter reading system
CN107040318A (en) * 2015-10-21 2017-08-11 卢克斯特拉有限公司 Method and system for communication
CN108349131A (en) * 2015-11-06 2018-07-31 塔科图特科有限责任公司 Multilayered structure and relative manufacturing process for electronic device
CN108369945A (en) * 2015-12-01 2018-08-03 英特尔公司 The integrated circuit configured with chip on chip on chip and substrate
CN110648927A (en) * 2018-06-27 2020-01-03 台湾积体电路制造股份有限公司 Integrated photonic package, and methods of forming the same
CN112582387A (en) * 2019-08-01 2021-03-30 文和文森斯设备公司 Microstructure enhanced absorption photosensitive device
CN113921476A (en) * 2020-06-23 2022-01-11 莱弗利科技(苏州)有限公司 Miniature high-integration infrared proximity and ambient light brightness sensor and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024124763A1 (en) * 2022-12-14 2024-06-20 莱弗利科技(苏州)有限公司 Optoisolator and packaging process therefor

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