CN116092923A - Carbon film-based silicon carbide ohmic contact structure and preparation method thereof - Google Patents
Carbon film-based silicon carbide ohmic contact structure and preparation method thereof Download PDFInfo
- Publication number
- CN116092923A CN116092923A CN202310084564.7A CN202310084564A CN116092923A CN 116092923 A CN116092923 A CN 116092923A CN 202310084564 A CN202310084564 A CN 202310084564A CN 116092923 A CN116092923 A CN 116092923A
- Authority
- CN
- China
- Prior art keywords
- metal
- film
- ohmic contact
- silicon carbide
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 96
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 150000004767 nitrides Chemical class 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 31
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000005121 nitriding Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 229910000510 noble metal Inorganic materials 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 238000005036 potential barrier Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon carbide ohmic contact structure based on a carbon film and a preparation method thereof, wherein the preparation method comprises the following steps: c film is deposited on the surface of the SiC substrate, and first annealing treatment is carried out; depositing a metal layer on one side of the C film away from the SiC substrate; nitriding one side of the metal layer, which is away from the C film, to form a metal nitride passivation layer; and carrying out a second annealing treatment to enable the metal to react with the C film to form a metal carbide intermediate layer, so as to obtain the metal nitride/metal carbide/SiC structure. According to the preparation method, the C film is introduced between the SiC and the metal layer, so that the contact potential barrier and the contact resistance rise caused by C element diffusion in the SiC can be effectively avoided, and the metal carbide with good thermal stability is obtained by annealing treatment, so that the silicon carbide ohmic contact structure with low resistance and thermal stability is obtained, the silicon carbide ohmic contact structure can keep good ohmic contact characteristics, and the reliability of the device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a silicon carbide ohmic contact structure based on a carbon film and a preparation method thereof.
Background
Silicon carbide (SiC) has the characteristics of wide band gap, high breakdown voltage, high saturated electron velocity, high thermal conductivity and the like, and is considered as a semiconductor material suitable for power devices, wherein 4H-SiC has the excellent properties of wide forbidden band, high critical breakdown electric field, high thermal conductivity and the like, and is an ideal material for preparing high-temperature, high-frequency, high-power and low-power devices. The metal/SiC ohmic contact ensures signal transmission with an external circuit, and the performance of the metal/SiC ohmic contact is related to the efficiency, gain, switching speed and the like of a device, and in SiC devices, the formation of the ohmic contact is usually obtained through ion implantation, metal deposition and high-temperature annealing, and due to chemical inertness and complex surface states of SiC, the annealing process for obtaining the ohmic contact usually requires a very high temperature (about 1000 ℃), and at high temperature, the control of alloy reaction and element diffusion at an interface is a difficulty in silicon carbide preparation.
The good ohmic contact is required to have a smooth and uniform contact interface, and also has lower specific contact resistivity and service thermal stability, however, at present, when metal and 4H-SiC ohmic contact are in contact, the interface is formed with metal silicide, carbon elements are diffused and gathered on the surface to form C clusters, C vacancies are formed in the 4H-SiC to influence the roughness and the surface state density of the interface, so that a Schottky barrier is raised, in addition, the thermal stability of an intermediate compound generated at the interface when part of metal and 4H-SiC form ohmic contact is poor, the ohmic contact characteristic is deteriorated in a high-temperature working environment, and the reliability of a device is influenced.
Therefore, the existing silicon carbide ohmic contact structure has the defects, and a new silicon carbide ohmic contact structure and a preparation method thereof are required to be designed so as to control alloy reaction and element diffusion at an interface and ensure low resistivity and thermal stability of silicon carbide.
Disclosure of Invention
Based on the expression, the invention provides a silicon carbide ohmic contact structure based on a carbon film and a preparation method thereof, which are used for solving the technical problems of low resistivity and poor thermal stability caused by the defects of large interface roughness, alloy reaction and element diffusion at an interface of the silicon carbide ohmic contact structure in the prior art.
The technical scheme for solving the technical problems is as follows:
in a first aspect, the present invention provides a method for preparing a carbon film-based silicon carbide ohmic contact structure, including:
step 1: depositing a C film on the surface of the SiC substrate to be metallized, and performing first annealing treatment;
step 2: depositing a metal layer on one side of the C film away from the SiC substrate;
step 3: nitriding treatment is carried out on one side, away from the C film, of the metal layer to form a metal nitride passivation layer, and a nitride passivation layer/metal/C film/SiC structure is obtained;
step 4: and carrying out a second annealing treatment on the nitride passivation layer/metal/C film/SiC structure so as to enable the metal to react with the C film to form a metal carbide intermediate layer, thereby obtaining the metal nitride/metal carbide/SiC structure.
On the basis of the technical scheme, the invention can be improved as follows.
Further, after the step 4, the method further includes:
etching the metal nitride passivation layer to obtain an etching region;
and depositing noble metal in the etching area, wherein the noble metal can be in contact with the carbide interlayer.
Further, before the step 1, the method further includes:
and pre-cleaning and pre-treating the SiC substrate.
Further, the pretreatment specifically includes:
injecting n-type ions into the epitaxial layer of the SiC substrate to obtain n-type SiC;
wherein the doping concentration of the n-type ions is 10 18 ～10 19 cm -3 。
Further, in the step 1, the C film is deposited on the surface of the SiC substrate to be metallized by using a direct current magnetron sputtering method.
Further, in the step 2, the metal layer is deposited on the C film by a direct current magnetron sputtering method.
Further, the temperature of the first annealing treatment is 1700-2000 ℃.
Further, the temperature of the second annealing treatment is 1200-1500 ℃.
In a second aspect, the present invention also provides a carbon film-based silicon carbide ohmic contact structure prepared by the preparation method as described in the first aspect, including: a SiC substrate, a metal carbide intermediate layer and a metal nitride passivation layer;
the metal carbide intermediate layer is arranged on the surface of the SiC substrate to be metallized;
the metal nitride passivation layer is arranged on one side of the metal carbide intermediate layer, which is away from the SiC substrate.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the carbon film-based silicon carbide ohmic contact structure further includes a noble metal;
the metal nitride passivation layer is provided with an etching region, and the noble metal is deposited in the etching region and is in contact with the metal carbide intermediate layer.
Compared with the prior art, the technical scheme of the application has the following beneficial technical effects:
according to the preparation method of the carbon film-based silicon carbide ohmic contact structure, the C film and the metal layer are sequentially deposited on the SiC substrate, the metal layer is subjected to nitriding treatment on the metal layer deviating from the C film, so that the metal nitride passivation layer is obtained, further, the obtained nitride passivation layer/metal/C film/SiC structure is subjected to annealing treatment, the C film and the metal layer react to form a metal carbide intermediate layer, and finally, the metal nitride/metal carbide/SiC structure is obtained, wherein in the preparation process, the C film is covered on the SiC surface to form a protective layer, so that the surface roughness caused by activation annealing can be remarkably reduced, and meanwhile, during high-temperature annealing, the diffusion and clusters of C element in the SiC can be effectively avoided. Compared with the prior art, the preparation method has the advantages that the C film is introduced between the SiC and the metal layer, so that the contact potential barrier and the contact resistance caused by C element diffusion in the SiC can be effectively prevented from being increased, and further, the metal carbide with good thermal stability is obtained by annealing treatment, so that the silicon carbide ohmic contact structure with low resistance and thermal stability is obtained, the prepared silicon carbide ohmic contact structure can keep good ohmic contact characteristics in a high-temperature working environment, and the reliability of a device is effectively improved.
Drawings
FIG. 1 is a schematic diagram of a method for fabricating a carbon film-based silicon carbide ohmic contact structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a preparation flow of a silicon carbide ohmic contact structure based on a carbon film according to an embodiment of the present invention.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Examples of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Leveling uniform contact interface, lower specific contact resistivity and better service thermal stability are key factors for evaluating ohmic contact performance, wherein three main approaches exist for reducing specific contact resistivity: (a) heavily doping thins the schottky barrier; (b) Dipoles are additionally constructed at the M-S interface to adjust the barrier height; (c) The present invention was devised with reference to the third approach by introducing an intercalation between the metal and semiconductor, lowering the barrier height by Mi Gesi (MIGS) barrier, releasing fermi level pinning.
Embodiments of the present invention will be described in further detail with reference to the accompanying drawings and examples, which are provided to illustrate the present invention, but are not intended to limit the scope of the present invention.
In a first aspect, as shown in fig. 1, a method for preparing a silicon carbide ohmic contact structure based on a carbon film according to an embodiment of the present invention includes:
step S1: depositing a C film on the surface of the SiC substrate to be metallized, and performing first annealing treatment;
step S2: depositing a metal layer on one side of the C film away from the SiC substrate;
step S3: nitriding treatment is carried out on one side, away from the C film, of the metal layer to form a metal nitride passivation layer, and a nitride passivation layer/metal/C film/SiC structure is obtained;
step S4: and carrying out a second annealing treatment on the nitride passivation layer/metal/C film/SiC structure so as to enable the metal to react with the C film to form a metal carbide intermediate layer, thereby obtaining the metal nitride/metal carbide/SiC structure.
Specifically, the SiC substrate in the present embodiment is a 4H-SiC substrate, and the size thereof may be 6 inches (here, only by way of example, without limitation to the SiC substrate). The metal layer is made of any one of Ti, ta, ni, co, mo and W, and Ti is taken as an example for description, the obtained nitride passivation layer is a TiN passivation layer, and the obtained metal carbide intermediate layer is a TiC intermediate layer.
In a specific example, the preparation method of the carbon film-based silicon carbide ohmic contact structure provided by the embodiment of the invention comprises the steps of sequentially depositing a C film and a Ti metal layer on a SiC substrate, and nitriding the Ti metal layer in the manner that the Ti metal layer deviates from the C film to obtain a TiN passivation layer.
Further, annealing treatment is carried out on the obtained TiN passivation layer/Ti/C film/SiC structure, so that the C film and the Ti metal layer react to form a TiC intermediate layer, and finally the TiN/TiC/SiC structure is obtained.
In the preparation process, a layer of C film is covered on the surface of SiC to form a protective layer, so that the surface roughness caused by activation annealing can be obviously reduced, and meanwhile, the diffusion and clusters of C element in the SiC can be effectively avoided during high-temperature annealing.
Compared with the prior art, the preparation method has the advantages that the C film is introduced between the SiC and the Ti metal layer, so that the contact potential barrier and the contact resistance increase caused by C element diffusion in the SiC can be effectively avoided, and further, the metal carbide with good thermal stability is obtained by annealing treatment, so that the silicon carbide ohmic contact structure with low resistance and thermal stability is obtained, the prepared silicon carbide ohmic contact structure can keep good ohmic contact characteristics in a high-temperature working environment, and the reliability of a device is effectively improved.
Further, on the basis of the above embodiment, as shown in fig. 2, after step S4, the method further includes:
and (3) carrying out etching treatment on the metal nitride passivation layer to obtain an etching region, wherein the shape and the size of the etching region are not limited, and the metal nitride passivation layer is specifically arranged according to actual needs.
And depositing noble metal in the etching area, wherein the noble metal can be contacted with the carbide intermediate layer to realize the connection of the silicon carbide ohmic contact structure and other devices, and constructing and forming a required device, wherein the noble metal can be selected according to actual needs, and the embodiment is introduced by taking Au as an example.
Further, on the basis of the above embodiment, before step S1, further includes:
the SiC substrate is pre-cleaned and pre-treated.
Wherein, the front cleaning specifically includes: standard RCA cleaning of 6 inch 4H-SiC epitaxial substrates was performed using H in the cleaning solution 2 SO 4 And H 2 O 2 Is H in volume ratio 2 SO 4 :H 2 O 2 ＝7:3。
The pretreatment specifically comprises the following steps: and injecting n-type ions into the epitaxial layer of the SiC substrate to obtain n-type SiC.
Wherein the doping concentration of the n-type ion is 10 18 ～10 19 cm -3 。
Further, on the basis of the above embodiment, in step S1, a C film is deposited on the surface of the SiC substrate to be metallized by using a direct current magnetron sputtering method, where the thickness of the C film ranges from 2 nm to 10nm, and the specific thickness and the actual need are selected.
Further, on the basis of the above embodiment, in step S2, a Ti metal layer is deposited on the C film by using a direct current magnetron sputtering method, and the thickness of the Ti metal layer ranges from 10nm to 50nm, and the specific thickness and the actual need may be selected.
Needs to be as followsIn the specification, the deposition power of the direct current magnetron sputtering method is 100W, the deposition rate is 2.4nm/s, and the vacuum degree of the chamber is less than 6e -6 mTorr。
After the Ti metal layer is deposited to the required target thickness, N is introduced into the chamber 2 (N 2 the/Ar flow ratio was 1: 4) And forming a TiN passivation layer on the Ti metal layer in situ, wherein the thickness range of the TiN passivation layer is 20-100 nm, and the specific thickness and the actual requirement are selected.
Further, on the basis of the above embodiment, the temperature of the first annealing treatment is 1700 to 2000 ℃, the specific temperature is set according to actual needs, and after the first annealing treatment, the N region of the SiC epitaxial layer can be activated.
Further, on the basis of the above embodiment, the temperature of the second annealing treatment is 1200-1500 ℃, the specific temperature is set according to the actual requirement, and the Ti and C films are annealed at high temperature at the temperature to form TiC with stoichiometric ratio. Wherein the excess unreacted Ti may act as a binding layer for the noble metal.
In a second aspect, an embodiment of the present invention further provides a silicon carbide ohmic contact structure based on a carbon film prepared by using the preparation method according to any one of the first aspect, including: a SiC substrate, a metal carbide intermediate layer and a metal nitride passivation layer.
The metal carbide intermediate layer is arranged on the surface of the SiC substrate needing metallization.
The metal nitride passivation layer is arranged on one side of the metal carbide intermediate layer, which faces away from the SiC substrate.
Further, the carbon film-based silicon carbide ohmic contact structure further includes a noble metal.
The metal nitride passivation layer is provided with an etching region, and noble metal is deposited in the etching region and is in contact with the metal carbide intermediate layer.
Specifically, as shown in fig. 2, taking a metal layer as an example of Ti, the silicon carbide ohmic contact structure based on the carbon film is a TiN/TiC/SiC structure, which is prepared by annealing a TiN/Ti/C film/SiC. The silicon carbide ohmic contact structure based on the carbon film is prepared by the preparation method according to any one of the first aspect, so that the preparation method has the beneficial effects, and the preparation method also has the advantages and is not repeated herein.
Taking a metal layer as Ti as an example, the range value of the specific contact resistivity of the silicon carbide ohmic contact structure based on the carbon film provided by the embodiment of the invention is 1e -6 ～1e -5 Ωcm 2 The method comprises the steps of carrying out a first treatment on the surface of the However, the specific contact resistivity of the silicon carbide ohmic contact structure without the added C film ranges from a value of 1e -5 ～1e -4 Ωcm 2 Compared with the prior art, the carbon film-based silicon carbide ohmic contact structure provided by the embodiment of the invention has better ohmic contact characteristics.
In the description of the present specification, the description with reference to the term "particular example" or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the invention. In this specification, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for preparing a silicon carbide ohmic contact structure based on a carbon film, comprising the steps of:
step 1: depositing a C film on the surface of the SiC substrate to be metallized, and performing first annealing treatment;
step 2: depositing a metal layer on one side of the C film away from the SiC substrate;
step 3: nitriding treatment is carried out on one side, away from the C film, of the metal layer to form a metal nitride passivation layer, and a nitride passivation layer/metal/C film/SiC structure is obtained;
step 4: and carrying out a second annealing treatment on the nitride passivation layer/metal/C film/SiC structure so as to enable the metal to react with the C film to form a metal carbide intermediate layer, thereby obtaining the metal nitride/metal carbide/SiC structure.
2. The method for producing a carbon film-based silicon carbide ohmic contact structure according to claim 1, further comprising, after the step 4:
etching the metal nitride passivation layer to obtain an etching region;
and depositing noble metal in the etching area, wherein the noble metal can be in contact with the carbide interlayer.
3. The method for producing a carbon film-based silicon carbide ohmic contact structure according to claim 1, further comprising, before the step 1:
and pre-cleaning and pre-treating the SiC substrate.
4. A method for preparing a carbon film-based silicon carbide ohmic contact structure according to claim 3, wherein the pretreatment specifically comprises:
injecting n-type ions into the epitaxial layer of the SiC substrate to obtain n-type SiC;
wherein the doping concentration of the n-type ions is 10 18 ～10 19 cm -3 。
5. The method for manufacturing a carbon film-based silicon carbide ohmic contact structure according to claim 1, wherein in the step 1, the C film is deposited on a surface of the SiC substrate to be metallized by a direct current magnetron sputtering method.
6. The method for manufacturing a carbon film-based silicon carbide ohmic contact structure according to claim 1, wherein in the step 2, the metal layer is deposited on the C film using a direct current magnetron sputtering method.
7. The method for producing a carbon film-based silicon carbide ohmic contact structure according to claim 1, wherein the temperature of the first annealing treatment is 1700 to 2000 ℃.
8. The method for producing a carbon film-based silicon carbide ohmic contact structure according to claim 1, wherein the temperature of the second annealing treatment is 1200 to 1500 ℃.
9. A carbon film-based silicon carbide ohmic contact structure prepared by the method according to any one of claims 1 to 8, comprising: a SiC substrate, a metal carbide intermediate layer and a metal nitride passivation layer;
the metal carbide intermediate layer is arranged on the surface of the SiC substrate to be metallized;
the metal nitride passivation layer is arranged on one side of the metal carbide intermediate layer, which is away from the SiC substrate.
10. The carbon film-based silicon carbide ohmic contact structure of claim 9, further comprising a noble metal;
the metal nitride passivation layer is provided with an etching region, and the noble metal is deposited in the etching region and is in contact with the metal carbide intermediate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310084564.7A CN116092923A (en) | 2023-01-16 | 2023-01-16 | Carbon film-based silicon carbide ohmic contact structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310084564.7A CN116092923A (en) | 2023-01-16 | 2023-01-16 | Carbon film-based silicon carbide ohmic contact structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116092923A true CN116092923A (en) | 2023-05-09 |
Family
ID=86198996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310084564.7A Pending CN116092923A (en) | 2023-01-16 | 2023-01-16 | Carbon film-based silicon carbide ohmic contact structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116092923A (en) |
-
2023
- 2023-01-16 CN CN202310084564.7A patent/CN116092923A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5728339B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
| JP6222771B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
| JP3930561B2 (en) | Ohmic contact and method for manufacturing a semiconductor device comprising such an ohmic contact | |
| JP5408248B2 (en) | Silicon carbide semiconductor device and manufacturing method thereof | |
| CN100585811C (en) | The Ohm contact production method of semi-insulation SiC semiconductor device | |
| CN102227812A (en) | Semiconductor device | |
| CN104335328A (en) | Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device manufactured by same | |
| JP2012160485A (en) | Semiconductor device and manufacturing method of the same | |
| JP2017175115A (en) | Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device | |
| CN117253905A (en) | SiC device with floating island structure and preparation method thereof | |
| JP3079851B2 (en) | Method for manufacturing silicon carbide electronic device | |
| CN103681256B (en) | A kind of silicon carbide MOSFET device and preparation method thereof | |
| JP2009043880A (en) | Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device | |
| US20110287626A1 (en) | Ohmic electrode and method of forming the same | |
| CN109686667A (en) | A kind of SiC base MOS device and its preparation method and application | |
| US10192970B1 (en) | Simultaneous ohmic contact to silicon carbide | |
| CN116092923A (en) | Carbon film-based silicon carbide ohmic contact structure and preparation method thereof | |
| CN107546113B (en) | Method for manufacturing high-temperature-resistant silicon carbide ohmic contact structure and structure thereof | |
| US20140327017A1 (en) | Silicon carbide barrier diode | |
| CN212967711U (en) | Semiconductor device and capacitor | |
| US20060186437A1 (en) | Bipolar transistor | |
| CN209766431U (en) | MPS diode device | |
| CN107546112B (en) | SiC ohmic contact structure and manufacturing method thereof | |
| JPH0831767A (en) | Manufacture of electrode structure | |
| KR20210030850A (en) | SiC Trench Gate MOSFET Device and Manufacturing Method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |