CN116072364A - Thermistor and manufacturing method thereof - Google Patents
Thermistor and manufacturing method thereof Download PDFInfo
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- CN116072364A CN116072364A CN202310182677.0A CN202310182677A CN116072364A CN 116072364 A CN116072364 A CN 116072364A CN 202310182677 A CN202310182677 A CN 202310182677A CN 116072364 A CN116072364 A CN 116072364A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/024—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being hermetically sealed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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Abstract
The present invention relates to a thermistor and a method for manufacturing the same. Wherein the thermistor includes: the device comprises a substrate, a first bonding pad and a second bonding pad which are positioned on the front surface of the substrate and mutually insulated, a first electrode and a second electrode which are positioned on the back surface of the substrate and mutually insulated, a thermistor chip and a plastic sealing layer; the first bonding pad is electrically connected with the first electrode, and the second bonding pad is electrically connected with the second electrode; the lower surface of the thermistor chip is adhered to the first bonding pad through a conductive adhesive layer, and the upper surface of the thermistor chip is connected with the second bonding pad through a metal lead; the plastic layer covers the front surface of the substrate, so that the thermistor chip and the metal leads are covered. The thermistor of the invention forms a chip LED packaging-like structure, can be manufactured based on LED production equipment, has simple manufacturing process and better machine universality, thus improving the production efficiency and reducing the production cost; and the thermistor chip and the outside can form good electric heating connection, so that the electric conduction and heat conduction performances required by the thermistor are met.
Description
Technical Field
The invention relates to the technical field of thermistors, in particular to a thermistor and a manufacturing method thereof.
Background
A thermistor is a sensor resistor whose resistance value changes with a change in temperature. At present, the structures of the thermistor can be divided into pin type and patch type, and the patch type can be divided into three structures, namely a laminated patch type, a thick film patch type and a solid ceramic patch type, and most of the patch type thermistors in the market are of laminated patch type and thick film patch type.
Wherein, the laminated patch type semiconductor ceramic comprises a semiconductor ceramic, an internal electrode positioned in the semiconductor ceramic and a terminal electrode positioned on the end face of the semiconductor ceramic and connected with the internal electrode, the manufacturing process is similar to that of an MLCC (multi-layer ceramic capacitors, chip multilayer ceramic capacitor), and the manufacturing steps comprise: mixing semiconductor ceramic powder with an adhesive to prepare a ceramic green sheet; printing a metal material on a ceramic green sheet to form an internal electrode; laminating and pressing the ceramic green sheets printed with the internal electrodes and the ceramic green sheets not printed with the internal electrodes, discharging glue, and sintering to obtain semiconductor ceramics; metal materials or the like are applied to both ends of the semiconductor ceramic and baked to form terminal electrodes.
The thick film patch type resistor is similar to a general patch resistor in structure, and comprises a ceramic substrate, a resistor film, a multi-layer protection layer and a multi-plating electrode, and the manufacturing steps are as follows: printing conductors on two sides of the back of the ceramic substrate, and drying to form a back electrode; printing conductors on two sides of the front surface of the ceramic substrate, and drying and sintering to form a front electrode; printing R paste between the front electrodes, and drying and sintering to form a resistor film; printing glass paste on the resistor film, and drying and sintering to form a primary glass protection layer; adjusting the resistance value of the laser trimming resistor layer; printing glass paste on the resistor layer, and drying to form a secondary glass protection layer; sputtering metal on the end surface, drying and sintering to form a side electrode; the side electrodes are electroplated with nickel/tin.
It can be seen that the structure of the existing thermistor has a variety, and the thermistors with different structures have great differences in processing technology and manufacturing equipment, and the manufacturing technology is complex and the manufacturing cost is high.
Disclosure of Invention
The invention aims to provide a novel thermistor and a manufacturing method thereof.
The present invention relates to a thermistor, comprising: the device comprises a substrate, a first bonding pad and a second bonding pad which are positioned on the front surface of the substrate and mutually insulated, a first electrode and a second electrode which are positioned on the back surface of the substrate and mutually insulated, a thermistor chip and a plastic sealing layer; the first bonding pad is electrically connected with the first electrode, and the second bonding pad is electrically connected with the second electrode; the lower surface of the thermistor chip is adhered to the first bonding pad through a conductive adhesive layer, and the upper surface of the thermistor chip is connected with the second bonding pad through a metal lead; the plastic layer covers the front surface of the substrate, thereby coating the thermistor chip and the metal leads.
The thermistor can be manufactured based on LED production equipment by forming a structure similar to chip LED packaging, has simple manufacturing process and better machine universality, and can improve the production efficiency and reduce the production cost of the thermistor. In addition, the thermistor with the novel structure has good bending strength, and the thermistor chip and the outside can form good electric heating connection, so that the electric conduction and heat conduction performances required by the thermistor are met.
Further, the conductive adhesive layer is divided into a first conductive adhesive layer located between the lower surface of the thermistor chip and the first bonding pad, and a second conductive adhesive layer extending out of the lower surface of the thermistor chip; the ratio of the height of the second conductive adhesive layer to the height of the thermistor chip is 1/20 to 1/5 in the range of the lower surface and the upper surface of the thermistor chip. Therefore, the bonding thrust of the chip is not lower than 130cN, so that the thermistor chip is not easy to fall off due to stress; meanwhile, the resistance value deviation of the thermistor chip can be controlled, so that the thermistor can keep high precision.
Further, a maximum distance from the metal lead to the upper surface of the thermistor chip in a direction orthogonal to the substrate is not more than 1/2 of a distance from the top of the plastic layer to the upper surface of the thermistor chip. Therefore, the metal lead wire can be ensured to be firmly coated on the plastic packaging adhesive layer and is not easy to break.
Further, the upper surface of the thermistor chip is connected with the second bonding pad through a bimetallic lead. Therefore, the electric connection between the thermistor chip and the second bonding pad is more stable and reliable.
Further, the second bonding pad is divided into a bonding wire region connected with the metal lead, a via hole connection region connected with the second electrode, and a connection bridge connecting the bonding wire region and the via hole connection region, and the width of the connection bridge is smaller than the width of the bonding wire region and the width of the via hole connection region. Therefore, the space formed among the bonding wire area, the via connection area and the connection bridge can accommodate the solder flowing out of the bonding wire area, so that the phenomenon that the solder flows to other components to cause short circuit of the device is avoided.
Further, a solder resist spacer is provided between the first electrode and the second electrode on the back surface of the substrate. Thus, it is possible to prevent the solder of one electrode from flowing to the other electrode to cause a short circuit when the electrodes on the back surface are soldered.
Further, the substrate is made of BT resin material. Thus, the substrate has excellent bending resistance and workability, and the bending resistance of the thermistor can be improved.
Further, the thermistor chip is a negative temperature coefficient thermistor chip.
The invention also relates to a method for manufacturing the thermistor, which comprises the following steps:
s1: forming a first bonding pad and a second bonding pad which are insulated from each other on the front surface of the substrate, and forming a first electrode and a second electrode which are insulated from each other and are electrically connected with the first bonding pad and the second bonding pad respectively on the back surface of the substrate;
s2: a conductive adhesive is injected into the first bonding pad, and the lower surface of the thermistor chip is placed on the conductive adhesive;
s3: connecting the upper surface of the thermistor chip with the second bonding pad by using a metal lead;
s4: and (3) performing injection molding on the front surface of the substrate by using plastic packaging glue to form a plastic packaging glue layer covering the thermistor chip and the metal leads.
Further, in the step S2, the conductive paste is dispensed into the first pad at least twice. Therefore, the quantity of the injected conductive adhesive can be effectively controlled, and the influence on the precision of products caused by larger resistance deviation due to excessive quantity of the conductive adhesive is avoided.
For a better understanding and implementation, the present invention is described in detail below with reference to the drawings.
Drawings
Fig. 1 is a side view of a thermistor of the present invention.
Fig. 2 is a top view of the thermistor of the present invention.
Fig. 3 is a bottom view of the thermistor of the present invention.
FIG. 4 is a schematic diagram showing the height ratio of the thermistor chip 50 to the conductive adhesive layer 40 around the chip in the thermistor according to the present invention.
FIG. 5 is a diagram of the thermistor according to the present invention after the conductive adhesive is dispensed in different manners in the step S2, wherein (a) is a single-point dispensing manner; (b) a four-point slurry method.
Fig. 6 is a plan view of a thermistor according to another embodiment of the present invention.
Detailed Description
In order to produce the thermistor by using the original LED production equipment of the applicant, the invention redesigns the structure of the thermistor.
Referring to fig. 1 and 2, fig. 1 is a side view of the thermistor of the present invention, fig. 2 is a top view of the thermistor of the present invention, and fig. 3 is a bottom view of the thermistor of the present invention. The thermistor of the present invention includes a substrate 10, a first pad 21, a second pad 22, a first electrode 31, a second electrode 32, a conductive paste layer 40, a thermistor chip 50, a plastic molding layer 60, and a metal lead 70.
Specifically, the substrate 10 is a rectangular substrate, two ends of the substrate are respectively provided with a first via hole 101 and a second via hole 102 penetrating through the front surface and the back surface of the substrate, metal layers are arranged on the inner walls of the first via hole 101 and the second via hole 102, and components on the front surface of the substrate 10 can be electrically connected and thermally conducted through the metal layers connecting the first via hole 101 or the second via hole 102 and components on the back surface. The two through holes can be further sealed by double ink, so that the phenomenon of glue leakage in the packaging process is effectively prevented. The substrate 10 preferably uses BT resin material, so that the thermistor can have excellent bending resistance and workability.
The first and second pads 21 and 22 are disposed on the front surface of the substrate 10 and are insulated from each other, and the first and second electrodes 31 and 32 are disposed on the rear surface of the substrate 10 and are insulated from each other. The first pad 21 and the first electrode 31 are electrically connected to the metal layer in the first via 101, and the second pad 22 and the second electrode 32 are electrically connected to the metal layer in the second via 102.
The second pad 22 may be divided into a bonding wire region connected to the metal wire to be close to the first pad 21, a via connection region connected to the second via 102, and a connection bridge connecting the bonding wire region and the via connection region. Preferably, the width of the connection bridge is smaller than the width of the bonding wire region and the via connection region, which refers to an extension length in a direction perpendicular to the connection direction of the bonding wire region and the via connection region. Thus, an open receiving space 2201 is formed around the wire bonding area, the connection bridge and the via connection area. By providing the accommodating space 2201, when, for example, a subsequent metal wire is bonded to the second pad 22 and solder is dispensed on the bonding wire region of the second pad 22, the accommodating space 2201 can accommodate the dispensed solder even if the solder flows out of the bonding wire region, thereby preventing the solder from flowing to other components and causing a short circuit of the device. The thermistor chip 50 is adhered to the first pad 21 through the conductive adhesive layer 40. The thermistor chip 50 is generally formed by sintering a ceramic material at a high temperature, and the upper surface and the lower surface are silver layer electrodes, and the periphery of the thermistor chip is silver-free. Specifically, the lower surface of the thermistor chip 50 is adhered to the conductive adhesive layer 40 and electrically connected to the first pads 21. The conductive paste layer 40 is formed of a conductive die bond paste, preferably silver paste. The thermistor chip 50 may be an NTC (negative temperature coefficient) chip or a PTC (positive temperature coefficient) chip.
When a proper amount of conductive adhesive is used to fix the thermistor chip 50 to the first bonding pad 21, a part of the conductive adhesive overflows from the edge of the lower surface of the thermistor chip 50, so that the formed conductive adhesive layer 40 is partially located outside the lower surface of the thermistor chip 50, and even partially covers the periphery of the thermistor chip 50. In the present invention, the conductive adhesive layer 40 may be divided into a first conductive adhesive layer located between the lower surface of the thermistor chip 50 and the first pad 21, and a second conductive adhesive layer extending out of the lower surface of the thermistor chip 50. In other words, the first conductive adhesive layer is a portion located directly below the lower surface of the thermistor chip 50, and the second conductive adhesive layer is a portion overflowing beyond the directly below the lower surface.
In order to achieve both the adhesion of the thermistor chip and the accuracy of the thermistor, it is preferable that the height h of the second conductive adhesive layer (i.e., the height of the conductive adhesive layer 40 located around the thermistor chip 50) is within the range of the lower surface and the upper surface of the thermistor chip 50 2 Height h with the thermistor chip 50 (i.e., the height from the upper surface to the lower surface of the thermistor chip 50) 1 Ratio h of 2 /h 1 1/20 to 1/5 (see FIG. 4). Thus, the chip adhesion thrust is ensured not to be lower than 130cN, so that the thermistor chip 50 is not easily forced to fall off; meanwhile, the resistance value deviation of the thermistor chip 50 can be controlled, so that the thermistor can keep high precision. When the height ratio is h 2 /h 1 If the pressure is less than 1/20, the chip edge slurry outlet cannot be visually checked in the inspection process of the die bonding process, so that the chip bonding thrust cannot be ensured to meet the requirement, and the product is poorThe product rate is high; when the height ratio is larger than 1/5, the resistance value of the chip is excessively shifted, and the thermistor has poor precision.
Both ends of the metal wire 70 are bonded to the upper surface (electrode) of the thermistor chip 50 and the bonding wire region of the second bonding pad 22, respectively, to electrically connect the thermistor chip 50 and the second bonding pad 22. The metal lead 70 may be a conventional gold wire or the like. In the present embodiment, the thermistor chip 50 and the second pads 22 are connected by a single metal lead (see fig. 2). In another embodiment, a bimetal lead 70 may be used to connect the thermistor chip 50 and the second bonding pad 22 (see fig. 6), and since the bimetal lead 70 has bonding sites independent of each other on both the chip and the bonding pad, the bimetal lead has more bonding sites and is more stable and reliable when subjected to the same pushing/pulling force than one metal lead.
The plastic layer 60 covers the front surface of the entire substrate 10 and all components disposed thereon, including the first bonding pad 21, the second bonding pad 22, the chip 50, and the metal leads 70. The molding compound layer 60 may be formed of a resin material such as silicone and epoxy, and is preferably formed of silicone. As shown in fig. 1, the distance from the top of the plastic layer 60 to the upper surface of the thermistor chip 50 in the direction orthogonal to the substrate 10 is set to H 1 The maximum distance from the metal lead 70 to the upper surface of the thermistor chip 50 is set to H 2 Then there is H 2 ≤1/2H 1 . Thus, the metal lead 70 can be firmly covered on the plastic layer 60, and is not easy to break.
In addition, a solder barrier 80 may be disposed between the first electrode 31 and the second electrode 32 on the back surface of the substrate 10 to prevent solder of one electrode from flowing to the other electrode to cause short circuit during soldering of the electrodes on the back surface. The solder resist partition 80 may be formed of a conventional solder resist ink.
The thermistor of the present invention can be manufactured by the following steps in sequence.
S1: first and second pads 21 and 22 are formed on the front surface of the substrate 10 to be insulated from each other, and first and second electrodes 31 and 32 are formed on the back surface of the substrate 10 to be insulated from each other and electrically connected to the first and second pads 21 and 22, respectively. Specifically, the method can be realized by the following steps: first, punching two ends of a substrate 10 to form a first via hole 101 and a second via hole 102; then, metal layers of the first and second vias 101 and 102, the first and second pads 21 and 22 on the front surface of the substrate 10, and the first and second electrodes 31 and 32 on the back surface of the substrate 10 are formed by electroless plating or electroplating, etching, or the like, which are commonly used in the art.
S2: a conductive paste 41 is dispensed onto the first bonding pad 21, and the lower surface of the thermistor chip 50 is placed on the conductive paste 41. This step S2 may be performed using a die bonder, wherein the conductive paste 41 (i.e., conductive die bond paste) preferably employs conductive silver paste. As for the way of dispensing the conductive paste 41, a single-dot paste method is generally adopted, that is, a proper amount of conductive paste is dispensed all at once into the region of the first pad 21 where the thermistor chip 50 is placed (see fig. 5 (a)). In the present embodiment, it is preferable to use a multipoint paste method in which a suitable amount of conductive paste is divided into two or more portions, and the conductive paste is dispensed in two or more portions, respectively, to the region of the first pad 21 where the chip 50 is to be placed. Fig. 5 (b) shows a front view of the substrate after four-point dispensing. Compared with single-point paste, the multi-point paste (such as four-point paste) can effectively control the amount of the conductive paste which is injected, and avoid the influence on the product precision due to larger resistance deviation of the chip 50 caused by excessive conductive paste.
S3: the upper surface electrode of the thermistor chip 50 is electrically connected to the second pad 22 using a metal lead 70. Specifically, this step S3 may be accomplished using a wire bonding machine, such that one end of the metal lead 70 is bonded to the thermistor chip 50 and the other end is bonded to the second pad 22. Preferably, the bonding of the metal leads 70 is performed in a counter-bonding manner, whereby the wire arc height can be reduced.
S4: the front surface of the substrate 10 is injection-molded with a molding compound to form a molding compound layer 60 covering the thermistor chip 50 and the metal leads 70. The step S4 can be completed by using a plastic packaging machine, so that the packaging protection of the chip and the metal lead is realized, and the sealing combination of the plastic packaging adhesive and the substrate is realized.
In general, in the production and manufacture of the thermistor according to the present invention, after a plurality of thermistors are formed on a whole substrate by the above steps, each thermistor is divided into individual products using a dicing saw.
The structure of the invention forms a structure similar to a chip LED package, can be manufactured based on the LED production process and production equipment, has simple manufacturing process and can be used for common equipment among different devices, thereby improving the production efficiency and reducing the cost. In addition, the packaging structure of the thermistor chip has good bending strength, and even if the circuit board to which the thermistor is attached is subjected to bending deformation, breakage or electrode falling off are not easy to occur; meanwhile, the thermistor chip can form good electric heating connection with the outside through the bonding pad and the electrode, and can meet the electric conduction and heat conduction performances required by the thermistor.
The present invention is further described below by performing bending strength test and accuracy measurement on the thermistor of the present invention and the conventional laminated chip thermistor.
Examples 1 to 2 are thermistors of the present invention, each having a size of 1.0X10.5 mm, and NTC chips (sizes of 0.33X10.33 mm to 0.38X10.38 mm) were used; comparative examples 1 to 4 are conventional laminated patches NTC, also 1.0X10.5 mm in size.
The flexural strength test was: and (3) welding the product (thermistor) onto a circuit board for bending test, repeatedly bending the circuit board in a mode that the bending angle is more than or equal to 30 degrees, and observing whether the product is broken or loose of the electrode. The number of bending times was 10 or more, and no fracture or electrode drop occurred, and the number was evaluated as "A"; the number of bending times was more than 3 but less than 10, and the electrode was broken or loosened, and was evaluated as "B"; if the number of bending times is not more than 3, the electrode is broken or loosened, and the evaluation is "C".
Further, the product accuracy of each example and comparative example was measured. In the invention, the precision refers to the resistance value precision grade of a product, for example, a product with a nominal resistance value of 100KΩ, and when the precision is 0.3%, the resistance value range must satisfy 99.7KΩ -100.3 KΩ. Specifically, the product precision is obtained by using a resistance tester to test the resistance of the thermistor at a constant temperature and then according to the ratio of the difference between the resistance and the nominal resistance to the nominal resistance. The results of the evaluation of flexural strength and product accuracy are shown in table 1 below.
TABLE 1
| Flexural Strength evaluation | Product accuracy | |
| Example 1 | A | 0.3％ |
| Example 2 | A | 1％ |
| Comparative example 1 | C | 1％ |
| Comparative example 2 | C | 3％ |
| Comparative example 3 | C | 5％ |
| Comparative example 4 | |
10％ |
From the results of table 1 above, it is evident that the examples are superior to the comparative examples in terms of flexural strength; the examples are comparable to or better than the comparative examples in terms of product accuracy. Therefore, the thermistor has better bending resistance and high precision.
The invention is applicable to the temperature range of-40-100 ℃, and can be widely applied to the fields of temperature sensors, household appliance product temperature detection, wearing products such as intelligent watches, bracelets and the like.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.
Claims (10)
1. A thermistor, characterized in that it comprises: the device comprises a substrate, a first bonding pad, a second bonding pad, a first electrode, a second electrode, a thermistor chip and a plastic sealing layer, wherein the first bonding pad and the second bonding pad are positioned on the front surface of the substrate and are mutually insulated; the first bonding pad is electrically connected with the first electrode, and the second bonding pad is electrically connected with the second electrode; the lower surface of the thermistor chip is adhered to the first bonding pad through a conductive adhesive layer, and the upper surface of the thermistor chip is connected with the second bonding pad through a metal lead; the plastic layer covers the front surface of the substrate, so that the thermistor chip and the metal lead are covered.
2. The thermistor of claim 1, wherein the conductive adhesive layer is divided into a first conductive adhesive layer located between the lower surface of the thermistor chip and the first bonding pad, and a second conductive adhesive layer extending out of the lower surface of the thermistor chip; the ratio of the height of the second conductive adhesive layer to the height of the thermistor chip in the range of the lower surface and the upper surface of the thermistor chip is 1/20-1/5.
3. The thermistor of claim 2, wherein a maximum distance of the metal leads from an upper surface of the thermistor chip in a direction orthogonal to the substrate is not more than 1/2 of a distance from a top of the plastic layer to the upper surface of the thermistor chip.
4. A thermistor according to claim 3, characterized in that the upper surface of the thermistor chip is connected to the second bonding pad by a bimetal lead.
5. The thermistor of claim 4, wherein said second pads are divided into wire bonding areas connected to said metal leads, via bonding areas connected to said second electrodes, and connection bridges connecting said wire bonding areas to said via bonding areas, said connection bridges having a width smaller than the width of said wire bonding areas and the width of said via bonding areas.
6. The thermistor according to claim 5, wherein a solder resist spacer is provided between the first electrode and the second electrode on the back surface of the substrate.
7. The thermistor according to claim 6, wherein the substrate is made of BT resin material.
8. The thermistor according to any of the claims 1 to 7, characterized in that the thermistor chip is a negative temperature coefficient thermistor chip.
9. A method of manufacturing a thermistor, comprising the steps of:
s1: forming a first bonding pad and a second bonding pad which are insulated from each other on the front surface of the substrate, and forming a first electrode and a second electrode which are insulated from each other and are electrically connected with the first bonding pad and the second bonding pad respectively on the back surface of the substrate;
s2: a conductive adhesive is injected into the first bonding pad, and the lower surface of the thermistor chip is placed on the conductive adhesive;
s3: connecting the upper surface of the thermistor chip with the second bonding pad by using a metal lead;
s4: and using plastic packaging glue to carry out injection molding on the front surface of the substrate to form a plastic packaging layer which covers the thermistor chip and the metal lead.
10. The method of manufacturing a thermistor according to claim 9,
in the step S2, the conductive paste is dispensed into the first bonding pad more than twice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310182677.0A CN116072364A (en) | 2023-02-28 | 2023-02-28 | Thermistor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310182677.0A CN116072364A (en) | 2023-02-28 | 2023-02-28 | Thermistor and manufacturing method thereof |
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