CN116062999A - Glass powder combination and preparation method thereof, electronic paste and battery - Google Patents
Glass powder combination and preparation method thereof, electronic paste and battery Download PDFInfo
- Publication number
- CN116062999A CN116062999A CN202211600740.XA CN202211600740A CN116062999A CN 116062999 A CN116062999 A CN 116062999A CN 202211600740 A CN202211600740 A CN 202211600740A CN 116062999 A CN116062999 A CN 116062999A
- Authority
- CN
- China
- Prior art keywords
- oxide
- glass frit
- glass powder
- glass
- electronic paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 139
- 239000000843 powder Substances 0.000 title claims abstract description 83
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 21
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 44
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 229910052726 zirconium Inorganic materials 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000001035 drying Methods 0.000 claims description 19
- 229910000464 lead oxide Inorganic materials 0.000 claims description 17
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 17
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 17
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 17
- 238000000227 grinding Methods 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 11
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 10
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 8
- 238000003723 Smelting Methods 0.000 claims description 5
- 229910052810 boron oxide Inorganic materials 0.000 claims description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 4
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000002562 thickening agent Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 2
- 229920002301 cellulose acetate Polymers 0.000 claims description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 229940116411 terpineol Drugs 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 25
- 239000002002 slurry Substances 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000000498 ball milling Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 22
- 239000002905 metal composite material Substances 0.000 description 14
- 239000004576 sand Substances 0.000 description 11
- 238000003801 milling Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 238000010902 jet-milling Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
Description
技术领域technical field
本发明涉及光电材料领域,特别涉及玻璃粉组合及其制备方法、电子浆料以及电池。The invention relates to the field of photoelectric materials, in particular to a glass powder combination and a preparation method thereof, an electronic paste and a battery.
背景技术Background technique
2022年以来,今年1~5月全国光伏装机累计23.71GW,同比增长139.25%,超2021年1~8月装机之和(22.05GW),光伏装机量不断增长的同时,对太阳能电池提效降本的要求却从未停止。目前主流量产的电池为PERC电池,但是量产效率已经逼近理论量产效率,提效降本的空间已经有限,在此过程中涌现出了数种高效晶硅电池,如TOPCon电池、HJT电池、IBC电池、钙钛矿电池等等,其中TOPCon电池和IBC电池金属化过程需要用到高温银浆,HJT电池金属化需要用到低温银浆。Since 2022, the country's photovoltaic installed capacity from January to May this year has accumulated 23.71GW, a year-on-year increase of 139.25%, exceeding the sum of installed capacity from January to August 2021 (22.05GW). Ben's demands never stopped. At present, PERC batteries are the main mass-produced batteries, but the mass production efficiency has approached the theoretical mass production efficiency, and the space for efficiency improvement and cost reduction has been limited. During this process, several high-efficiency crystalline silicon batteries have emerged, such as TOPCon batteries and HJT batteries. , IBC batteries, perovskite batteries, etc. Among them, the metallization process of TOPCon batteries and IBC batteries requires the use of high-temperature silver paste, and the metallization of HJT batteries requires the use of low-temperature silver paste.
TOPCon电池和IBC电池以及目前主流的PERC电池,其效率的提升极大程度依赖于前表面和背表面钝化技术的优化,近年来当原子层沉积技术生长的氧化铝钝化膜被证明是一种较好的钝化材料,相对于氧化硅、氮化硅、氮氧化硅等常用的钝化材料,氧化铝薄膜内的固定负电荷浓度可以达到较高的浓度,可以提供非常好的场效应钝化作用,降低金属复合J0,metal,提升效率,但是钝化效果好的同时,却为浆料接触带来了难题,金属化浆料需要有较好的接触性能,且又要防止腐蚀性能过大造成烧穿,降低效率。The improvement of the efficiency of TOPCon batteries, IBC batteries and the current mainstream PERC batteries largely depends on the optimization of the passivation technology on the front surface and the back surface. In recent years, the aluminum oxide passivation film grown by atomic layer deposition technology has been proved to be a A better passivation material, compared with commonly used passivation materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., the fixed negative charge concentration in the aluminum oxide film can reach a higher concentration, which can provide a very good field effect The passivation effect reduces the J0, metal of the metal composite and improves the efficiency, but at the same time the passivation effect is good, it brings difficulties to the slurry contact. The metallization slurry needs to have good contact performance and anti-corrosion performance If it is too large, it will cause burn-through and reduce efficiency.
主流的浆料主要适用于常用的氧化硅、氮化硅等钝化结构,当采用氧化铝钝化结构时会出现较为严重的EL云雾,效率偏低,稳定性差。常规的浆料印刷完在烘干过程中常因刮蹭掉粉,导致烧结后出现大量的EL断栅,影响效率和美观。因此,开发适用于氧化铝钝化结构的金属化浆料势在必行。The mainstream slurry is mainly suitable for commonly used passivation structures such as silicon oxide and silicon nitride. When the passivation structure of aluminum oxide is used, serious EL clouds will appear, with low efficiency and poor stability. After printing with conventional paste, the powder is often scraped off during the drying process, resulting in a large number of EL broken grids after sintering, which affects the efficiency and appearance. Therefore, it is imperative to develop metallization pastes suitable for alumina passivation structures.
发明内容Contents of the invention
有鉴于此,本发明提供了玻璃粉组合及其制备方法、电子浆料以及电池。In view of this, the invention provides a glass frit combination, a preparation method thereof, an electronic paste and a battery.
为了实现上述发明目的,本发明提供以下技术方案:In order to achieve the above-mentioned purpose of the invention, the present invention provides the following technical solutions:
第一方面,本发明提供了玻璃粉组合,包括玻璃粉体系T和玻璃粉体系G;In a first aspect, the present invention provides a glass frit combination, including a glass frit system T and a glass frit system G;
所述玻璃粉体系T的氧化物包括:氧化碲和氧化铅;The oxides of the glass frit system T include: tellurium oxide and lead oxide;
所述玻璃粉体系G的氧化物包括:氧化硅和氧化钨;The oxides of the glass frit system G include: silicon oxide and tungsten oxide;
所述玻璃粉体系T与所述玻璃粉体系G的质量比(1.5~4):1。The mass ratio (1.5-4) of the glass powder system T to the glass powder system G:1.
优选地,以质量份计,所述玻璃粉体系T的氧化物包括:氧化碲30-50份和氧化铅30~45份;Preferably, in parts by mass, the oxides of the glass frit system T include: 30-50 parts of tellurium oxide and 30-45 parts of lead oxide;
以质量份计,所述玻璃粉体系G的氧化物包括:氧化硅10~30份和氧化钨8~15份。In parts by mass, the oxides of the glass frit system G include: 10-30 parts of silicon oxide and 8-15 parts of tungsten oxide.
优选地,所述玻璃粉体系T包括:氧化铋、氧化钨、氧化碲、氧化铅以及碱金属氧化物;Preferably, the glass frit system T includes: bismuth oxide, tungsten oxide, tellurium oxide, lead oxide and alkali metal oxides;
所述玻璃粉体系G包括:氧化铋、氧化钨、氧化碲、氧化铅、氧化硅、碱土金属氧化物以及氧化硼。The glass frit system G includes: bismuth oxide, tungsten oxide, tellurium oxide, lead oxide, silicon oxide, alkaline earth metal oxide and boron oxide.
优选地,包括玻璃粉体系T和玻璃粉体系G;Preferably, glass frit system T and glass frit system G are included;
以质量份计,所述玻璃粉体系T的氧化物包括如下组分:In parts by mass, the oxides of the glass frit system T include the following components:
以质量份计,所述玻璃粉体系G的氧化物包括如下组分:In parts by mass, the oxides of the glass frit system G include the following components:
优选地,所述玻璃粉体系T中,所述氧化碲与所述氧化铅的质量比包括40:25。Preferably, in the glass frit system T, the mass ratio of the tellurium oxide to the lead oxide is 40:25.
优选地,所述玻璃粉体系T的氧化物中,所述氧化铋、所述氧化钨、所述氧化碲、所述氧化铅与所述碱金属氧化物的质量比为18:7:40:25:10。Preferably, in the oxides of the glass powder system T, the mass ratio of the bismuth oxide, the tungsten oxide, the tellurium oxide, the lead oxide to the alkali metal oxide is 18:7:40: 25:10.
优选地,所述玻璃粉体系G中,所述氧化硅与所述氧化钨的质量比包括20:10。Preferably, in the glass frit system G, the mass ratio of silicon oxide to tungsten oxide is 20:10.
优选地,所述玻璃粉体系G的氧化物中,所述氧化铋、所述氧化钨、所述氧化碲、所述氧化铅、所述氧化硅、所述碱土金属氧化物与所述氧化硼的质量比为20:10:15:25:20:4:6。Preferably, among the oxides of the glass frit system G, the bismuth oxide, the tungsten oxide, the tellurium oxide, the lead oxide, the silicon oxide, the alkaline earth metal oxide and the boron oxide The mass ratio is 20:10:15:25:20:4:6.
优选地,所述玻璃粉体系T与所述玻璃粉体系G的质量比为70:30。Preferably, the mass ratio of the glass frit system T to the glass frit system G is 70:30.
第二方面,本发明还提供了包括任意一项所述的玻璃粉组合的制备方法,为:取所述玻璃粉体系T和所述玻璃粉体系G的原料混合、熔炼、烘干后,分别经水磨、气流磨,烘干、粉碎,制得所述玻璃粉组合。In the second aspect, the present invention also provides a preparation method comprising any one of the glass powder combinations, which is: after mixing, melting and drying the raw materials of the glass powder system T and the glass powder system G, respectively The glass powder combination is obtained through water milling, jet milling, drying and crushing.
优选地,所述水磨采用四种锆球,直径为7mm的圆形锆球、直径为7mm的柱形锆球、直径为5mm的圆形锆球、直径为5mm的柱形锆球的质量比为2:2:1:1;Preferably, the water mill adopts four kinds of zirconium balls, the mass ratio of circular zirconium balls with a diameter of 7mm, cylindrical zirconium balls with a diameter of 7mm, circular zirconium balls with a diameter of 5mm, and cylindrical zirconium balls with a diameter of 5mm is 2:2:1:1;
优选地,所述气流磨的研磨气压为0.65Mpa,分级轮转速为100Hz。Preferably, the grinding air pressure of the jet mill is 0.65Mpa, and the rotating speed of the classifying wheel is 100Hz.
第三方面,本发明还提供了包括以上任意一项所述的玻璃粉组合,或如以上任意一项所述的制备方法制得的玻璃粉组合在制备电子浆料或电池中的应用。In the third aspect, the present invention also provides the use of the glass frit combination described in any one of the above, or the glass frit combination prepared by the preparation method described in any one of the above in the preparation of electronic paste or battery.
第四方面,本发明了还提供了电子浆料,包括以上任意一项所述的玻璃粉组合,或以上任意一项所述的制备方法制得的玻璃粉组合,以及银粉和有机粘合剂。In the fourth aspect, the present invention also provides electronic paste, including the glass powder combination described in any one of the above, or the glass powder combination prepared by any of the above preparation methods, as well as silver powder and organic binder .
优选地,以质量份计,包括如下组分:Preferably, in terms of parts by mass, the following components are included:
银粉75~92份75-92 parts of silver powder
有机粘合剂6~14份。6-14 parts of organic binder.
优选地,所述银粉包括类球形、微晶粉中的一种或两者以上的组合物,所述银粉的平均粒径为1.0μm~3.0μm。Preferably, the silver powder includes one or more of spherical and microcrystalline powders, and the average particle size of the silver powder is 1.0 μm˜3.0 μm.
优选地,所述有机粘合剂包括溶剂、增稠剂、增塑剂或触变剂中的一种或两者以上的组合物。Preferably, the organic adhesive includes one or a combination of two or more of solvents, thickeners, plasticizers or thixotropic agents.
优选地,所述溶剂包括DOP、DBE、松油醇、丁基卡必醇、丁基卡必醇醋酸酯、苯甲醇、乙二醇单甲醚或二乙二醇二乙醚中的一种或两者以上的组合物。Preferably, the solvent includes one or more of DOP, DBE, terpineol, butyl carbitol, butyl carbitol acetate, benzyl alcohol, ethylene glycol monomethyl ether or diethylene glycol diethyl ether A combination of two or more.
优选地,所述增稠剂包括乙基纤维素、醋酸纤维素、固态丙烯酸树脂或ABS树脂中的一种或两者以上的组合物。Preferably, the thickener includes one or a combination of ethyl cellulose, cellulose acetate, solid acrylic resin or ABS resin.
优选地,所述有机粘合剂的制备方法包括:取原料混合,于70~100℃搅拌、熔融,获得均一的所述有机粘合剂。Preferably, the preparation method of the organic binder includes: mixing raw materials, stirring and melting at 70-100° C. to obtain a uniform organic binder.
优选地,所述电子浆料的制备方法包括:将所述银粉、所述玻璃粉和所述有机粘合剂按比例混合,润湿后,研磨分散1~4h,过滤,获得所述电子浆料。Preferably, the preparation method of the electronic paste includes: mixing the silver powder, the glass powder and the organic binder in proportion, after wetting, grinding and dispersing for 1-4 hours, and filtering to obtain the electronic paste material.
第五方面,本发明还提供了包括以上任意一项所述的电子浆料在制备电池中的应用。In the fifth aspect, the present invention also provides the use of the electronic paste described in any one of the above items in the preparation of batteries.
第六方面,本发明还提供了电池,包括:以上任意一项所述的玻璃粉组合或以上任意一项所述的制备方法制得的玻璃粉组合,或以上任意一项所述的电子浆料,以及可接受的其他辅料In the sixth aspect, the present invention also provides a battery, including: the glass frit combination described in any one of the above or the glass frit combination prepared by any one of the above preparation methods, or the electronic paste described in any one of the above materials, and other acceptable excipients
本发明研发出两种不同的玻璃粉体系,高碲玻璃粉体系T,此体系具有较宽的接触窗口,可保证浆料应用于不同钝化结构的电池时都具有较好的接触性能;高硅玻璃粉体系G,此体系具有较低的腐蚀水平,可保证浆料应用于钝化膜较薄的情况下,浆料不会对硅片造成过度腐蚀。此外,本发明通过调整玻璃粉的制作工艺,优化后的玻璃粉应用于浆料中时,在烘干后不出现栅线脱落问题,极大提高了电池片的美观性和稳定性。The present invention has developed two different glass powder systems, the high tellurium glass powder system T, which has a wider contact window and can ensure that the slurry has better contact performance when applied to batteries with different passivation structures; Silica glass powder system G, this system has a low corrosion level, which can ensure that the slurry will not cause excessive corrosion to the silicon wafer when the passivation film is thin. In addition, the present invention adjusts the manufacturing process of the glass powder, and when the optimized glass powder is applied to the slurry, there is no grid line falling off problem after drying, which greatly improves the aesthetics and stability of the battery sheet.
附图说明Description of drawings
通过参考附图阅读下文的详细描述,本公开示例性实施方式的上述以及其他目的、特征和优点将变得易于理解。在附图中,以示例性而非限制性的方式示出了本公开的若干实施方式,并且相同或对应的标号表示相同或对应的部分,其中:The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily understood by reading the following detailed description with reference to the accompanying drawings. In the drawings, several embodiments of the present disclosure are shown by way of illustration and not limitation, and the same or corresponding reference numerals indicate the same or corresponding parts, wherein:
图1示优化组A在不同钝化结构上的金属复合表现;Fig. 1 shows the metal composite performance of optimization group A on different passivation structures;
图2示优化组A在不同钝化结构上的接触性能表现;Fig. 2 shows the contact performance of optimization group A on different passivation structures;
图3示优化组B在不同钝化结构上的金属复合表现;Fig. 3 shows the metal composite performance of optimized group B on different passivation structures;
图4示优化组B在不同钝化结构上的接触性能表现;Fig. 4 shows the contact performance of optimized group B on different passivation structures;
图5示优化组C在不同钝化结构上的金属复合表现;Figure 5 shows the metal composite performance of optimized group C on different passivation structures;
图6示优化组C在不同钝化结构上的接触性能表现;Fig. 6 shows the contact performance of optimized group C on different passivation structures;
图7示不同球磨工艺的玻璃粉接触性能对比;Fig. 7 shows the glass powder contact performance comparison of different ball milling processes;
图8示不同球磨工艺的玻璃粉金属复合对比;Figure 8 shows the glass powder metal composite comparison of different ball milling processes;
图9示改进球磨工艺后的玻璃粉接触性能对比;Fig. 9 shows the glass frit contact performance comparison after improving the ball milling process;
图10示改进球磨工艺后的金属复合性能对比。Figure 10 shows the performance comparison of metal composites after the improved ball milling process.
具体实施方式Detailed ways
本发明公开了玻璃粉组合及其制备方法、电子浆料以及电池,本领域技术人员可以借鉴本文内容,适当改进工艺参数实现。特别需要指出的是,所有类似的替换和改动对本领域技术人员来说是显而易见的,它们都被视为包括在本发明。本发明的方法及应用已经通过较佳实施例进行了描述,相关人员明显能在不脱离本发明内容、精神和范围内对本文所述的方法和应用进行改动或适当变更与组合,来实现和应用本发明技术。The invention discloses a glass powder combination and a preparation method thereof, an electronic paste and a battery, and those skilled in the art can learn from the content of this article and appropriately improve the process parameters to realize it. In particular, it should be pointed out that all similar replacements and modifications are obvious to those skilled in the art, and they are all considered to be included in the present invention. The method and application of the present invention have been described through preferred embodiments, and the relevant personnel can obviously make changes or appropriate changes and combinations to the method and application described herein without departing from the content, spirit and scope of the present invention to realize and Apply the technology of the present invention.
本发明提供的玻璃粉组合及其制备方法、电子浆料以及电池中,所用原料及试剂均可由市场购得。In the glass powder combination and the preparation method thereof, the electronic paste and the battery provided by the present invention, the raw materials and reagents used can be purchased from the market.
下面结合实施例,进一步阐述本发明:Below in conjunction with embodiment, further set forth the present invention:
实施例1玻璃粉体系T中不同氧化物的配比的摸索Exploration of the proportioning ratio of different oxides in the glass frit system T of
接触电阻率测试采用的是TLM法,即矩形传输线法,将印刷烧结完的太阳能电池片切割成一定宽度的长条(宽度设为W),采用仪器恒流源测量不同距离的的栅线间的电阻(RL),将不同距离与所测得电阻拟合为一条直线,根据公式RL(Ln)=2Rc×(Rs/W)*Ln(其中RL所测得得电阻,Rc为总接触电阻,Rs为半导体薄层电阻,W为切割的长条的宽度,Ln为不同栅线的距离),得出Rc和Rs后,根据公式ρc=(Rc2·W2)/Rs得到接触电阻率ρc。The contact resistivity test uses the TLM method, that is, the rectangular transmission line method. The printed and sintered solar cells are cut into strips of a certain width (the width is set to W), and the constant current source of the instrument is used to measure the distance between the grid lines at different distances. According to the formula RL(Ln)=2Rc×(Rs/W)*Ln (the resistance measured by RL, Rc is the total contact resistance , Rs is the semiconductor sheet resistance, W is the width of the cut strip, and Ln is the distance between different gate lines), after obtaining Rc and Rs, the contact resistivity ρc is obtained according to the formula ρc=(Rc2·W2)/Rs.
金属复合测试是将浆料用金属复合网版(该网版上有七个不同线宽的区域图案,代表不同程度的金属化程度水平,分别为2.52%、3.02%、3.95%、4.61%、10.54%、14.37%、18.41%,对应线宽分别为30μm、45μm、60μm、80μm、180μm、280μm、380μm)印刷在硅片上,用sunsVoc测试仪将每个区域进行测试,得出J01;取金属化面积为x轴,所测的J01为y轴,拟合成一条直线,所得到的方程中的斜率k即为金属复合数值。The metal composite test is to use a metal composite screen for the paste (there are seven regional patterns with different line widths on the screen, representing different degrees of metallization levels, respectively 2.52%, 3.02%, 3.95%, 4.61%, 10.54%, 14.37%, 18.41%, the corresponding line widths are 30μm, 45μm, 60μm, 80μm, 180μm, 280μm, 380μm) printed on the silicon wafer, each area is tested with a sunsVoc tester, and J01 is obtained; take The metallized area is the x-axis, the measured J01 is the y-axis, and a straight line is fitted, and the slope k in the obtained equation is the metal composite value.
表1玻璃粉T调整后的成分对比Table 1 The composition comparison of glass frit T after adjustment
由表1可知,通过调整比例后的优化组A,在两种钝化结构上的综合性能最好;同时我们可以看出,高碲玻璃粉体系T在不同的钝化结构上均有较好的接触性能,但是因为对硅片的损伤较大,因此金属复合较好,在单独使用时会导致开压较低,使用时需在配方中做出防止过度腐蚀的设计。It can be seen from Table 1 that the optimized group A after adjusting the ratio has the best comprehensive performance on the two passivation structures; at the same time, we can see that the high tellurium glass powder system T has better performance on different passivation structures. Excellent contact performance, but because of the greater damage to the silicon wafer, the metal compound is better, and when used alone, the opening pressure will be lower. When using it, it is necessary to make a design to prevent excessive corrosion in the formula.
通过调整玻璃粉体系T中不同氧化物的配比,得出以下最佳配比,氧化铋:氧化钨:氧化碲:氧化铅:碱金属,当这几种氧化物的质量配比是18:7:40:25:10时,所制作的玻璃粉具有较宽的接触窗口,但腐蚀较大,在使用时需搭配另一种玻璃粉体系。By adjusting the ratio of different oxides in the glass powder system T, the following optimal ratio is obtained, bismuth oxide: tungsten oxide: tellurium oxide: lead oxide: alkali metal, when the mass ratio of these oxides is 18: At 7:40:25:10, the prepared glass powder has a wider contact window, but the corrosion is greater, and another glass powder system needs to be used when using it.
实施例2玻璃粉体系G中不同氧化物的配比The proportioning of different oxides in the glass frit system G of
接触电阻率测试采用的是TLM法,即矩形传输线法,将印刷烧结完的太阳能电池片切割成一定宽度的长条(宽度设为W),采用仪器恒流源测量不同距离的的栅线间的电阻(RL),将不同距离与所测得电阻拟合为一条直线,根据公式RL(Ln)=2Rc×(Rs/W)*Ln(其中RL所测得得电阻,Rc为总接触电阻,Rs为半导体薄层电阻,W为切割的长条的宽度,Ln为不同栅线的距离),得出Rc和Rs后,根据公式ρc=(Rc2·W2)/Rs得到接触电阻率ρc。The contact resistivity test uses the TLM method, that is, the rectangular transmission line method. The printed and sintered solar cells are cut into strips of a certain width (the width is set to W), and the constant current source of the instrument is used to measure the distance between the grid lines at different distances. According to the formula RL(Ln)=2Rc×(Rs/W)*Ln (the resistance measured by RL, Rc is the total contact resistance , Rs is the semiconductor sheet resistance, W is the width of the cut strip, and Ln is the distance between different gate lines), after obtaining Rc and Rs, the contact resistivity ρc is obtained according to the formula ρc=(Rc2·W2)/Rs.
金属复合测试是将浆料用金属复合网版(该网版上有七个不同线宽的区域图案,代表不同程度的金属化程度水平,分别为2.52%、3.02%、3.95%、4.61%、10.54%、14.37%、18.41%,对应线宽分别为30μm、45μm、60μm、80μm、180μm、280μm、380μm)印刷在硅片上,用sunsVoc测试仪将每个区域进行测试,得出J01;取金属化面积为x轴,所测的J01为y轴,拟合成一条直线,所得到的方程中的斜率k即为金属复合数值。The metal composite test is to use a metal composite screen for the paste (there are seven regional patterns with different line widths on the screen, representing different degrees of metallization levels, respectively 2.52%, 3.02%, 3.95%, 4.61%, 10.54%, 14.37%, 18.41%, the corresponding line widths are 30μm, 45μm, 60μm, 80μm, 180μm, 280μm, 380μm) printed on the silicon wafer, each area is tested with a sunsVoc tester, and J01 is obtained; take The metallized area is the x-axis, the measured J01 is the y-axis, and a straight line is fitted, and the slope k in the obtained equation is the metal composite value.
表2玻璃粉G调整后的成分对比Table 2 The composition comparison of glass frit G after adjustment
由表2可知,通过调整比例后的优化组B,在两种钝化结构上的性能最好。同时我们可以看出,高硅玻璃粉体系G在不同的钝化结构上均有较低的金属复合,但是因为其对硅片的损伤较小,因此接触性能一般,在单独使用时开压会较高,但是会窗口较窄,有可能出现云雾的情况,使用时需在配方中做出提升接触性能的的设计。It can be seen from Table 2 that the optimized group B after adjusting the ratio has the best performance on the two passivation structures. At the same time, we can see that the high-silica glass powder system G has lower metal recombination in different passivation structures, but because it has less damage to the silicon wafer, the contact performance is average, and the opening pressure will be lower when used alone. Higher, but the window is narrow, and there may be clouds and fog. When using it, it is necessary to make a design in the formula to improve the contact performance.
通过调整玻璃粉体系G中不同氧化物的配比,得出以下最佳配比,氧化铋:氧化钨:氧化碲:氧化铅:氧化硅:碱土金属:氧化硼,当这几种氧化物的质量配比是20:10:15:25:20:4:6时,所制作的玻璃粉对腐蚀性能的控制表现较好,但是接触性能偏差,需搭配玻璃粉体系T使用。By adjusting the ratio of different oxides in the glass powder system G, the following optimal ratios are obtained, bismuth oxide: tungsten oxide: tellurium oxide: lead oxide: silicon oxide: alkaline earth metal: boron oxide, when these oxides When the mass ratio is 20:10:15:25:20:4:6, the prepared glass frit can control the corrosion performance better, but the contact performance is deviated, so it needs to be used with the glass frit system T.
实施例3Example 3
由实施例1和实施例2的结果可知,高碲玻璃粉体系T具有较好的接触性能,但是腐蚀太大,容易造成对硅片的过度腐蚀;高硅玻璃粉体系G具有较低的金属复合,但是接触性能比较一般,容易出现接触不良的情况;综上,将这两个玻璃粉体系组合使用,通过调整两者的比例以达到最好的性能。From the results of Example 1 and Example 2, it can be seen that the high-tellurium glass powder system T has good contact performance, but the corrosion is too large, which easily causes excessive corrosion to the silicon wafer; the high-silicon glass powder system G has a lower metal Composite, but the contact performance is relatively general, and it is prone to poor contact; in summary, the two glass powder systems are used in combination, and the ratio of the two is adjusted to achieve the best performance.
表3调整后的浆料中玻璃粉T和玻璃粉G的占比Table 3 Proportion of glass frit T and glass frit G in the adjusted slurry
从表3的实验数据可以看出,当玻璃粉体系T占比为70%,玻璃粉体系G含量为30%时,浆料的综合性最好,特别是在氧化铝钝化层上具有较好的性能。From the experimental data in Table 3, it can be seen that when the proportion of glass frit system T is 70%, and the content of glass frit system G is 30%, the comprehensiveness of the slurry is the best, especially on the alumina passivation layer. good performance.
实施例4不同球磨工艺制作的D50在1.5μm左右时的粒径数据对比Example 4 Comparison of particle size data when D50 produced by different ball milling processes is around 1.5 μm
水磨方式的制作工艺为配料→混合→熔炼(1100℃下保温80min)→烘干(150℃)→球磨罐水磨(10h)→过滤静置→烘干(150℃)→粉碎→成品玻璃粉。其中球磨过程采用的是4L的球磨罐,锆球采用四种,分别为直径为7毫米的圆形锆球:直径为7毫米的柱形锆球:直径为5毫米的圆形锆球:直径为5毫米的柱形锆球=2:2:1:1,锆球总质量为4Kg。The production process of the water mill method is batching→mixing→smelting (1100°C heat preservation for 80min)→drying (150°C)→ball milling tank water milling (10h)→filtering and standing→drying (150°C)→crushing→finished glass powder. Among them, the ball milling process adopts a 4L ball mill tank, and four kinds of zirconium balls are used, which are circular zirconium balls with a diameter of 7 mm: cylindrical zirconium balls with a diameter of 7 mm: circular zirconium balls with a diameter of 5 mm: 5 mm cylindrical zirconium balls = 2:2:1:1, the total mass of zirconium balls is 4Kg.
砂磨方式的制作工艺为配料→混合→熔炼(1100℃下保温80min)→烘干(150℃)→用粉碎机初步粉碎→砂磨机球磨→过滤静置→烘干(150℃)→粉碎→成品玻璃粉。其中砂磨机的主要调节参数为转速,设置为1000r/min,次数为两次。The production process of the sand mill method is batching→mixing→smelting (1100°C for 80min)→drying (150°C)→primary crushing with a pulverizer→sand mill ball milling→filtering and standing→drying (150°C)→crushing → Finished glass powder. Among them, the main adjustment parameter of the sand mill is the rotational speed, which is set to 1000r/min, and the number of times is twice.
气流磨的制作工艺为配料、混合、熔炼(1100℃下保温80min)、烘干(150℃)、用粉碎机初步粉碎、气流磨球磨、烘干(150℃)、粉碎、成品玻璃粉。其中气流磨球磨过程主要调节参数研磨气压,设置为0.65Mpa,调节分级轮转速,设置为100Hz。The production process of the jet mill is batching, mixing, melting (1100°C heat preservation for 80 minutes), drying (150°C), preliminary crushing with a pulverizer, jet mill ball milling, drying (150°C), crushing, and finished glass powder. Among them, the main adjustment parameters of the jet milling process are the grinding air pressure, which is set to 0.65Mpa, and the speed of the classification wheel is adjusted, which is set to 100Hz.
传统的球磨方式大多采用滚筒式的水磨对熔炼后的玻璃粉进行加工至所需的粒径大小,但是此球磨方式制作的玻璃粉粒径跨度大,粒径内部大小相差较大,而且Dmax偏大,应用于浆料中时容易出现印刷断栅增多,烘干后栅线脱落,即印刷性能差,烘干窗口窄,但是水磨方式加工的玻璃粉D10较小,即在烧结是具有较高活性,使用此方法制作的玻璃粉具有较好的接触窗口;使用砂磨工艺制作的玻璃粉在粒径跨度有一定的降低,但是在3M撕拉时还是会有一定情况的脱粉,应用于浆料中时断栅比例也有降低,电性能表现略差于水磨方式;使用气流磨制作的玻璃粉跨度最小,在连续印刷中几乎不出现断栅,且3M撕拉无脱粉,但是电性能也略差于水磨方式。The traditional ball milling method mostly uses a drum-type water mill to process the smelted glass powder to the required particle size, but the glass powder produced by this ball milling method has a large particle size span, a large difference in the internal size of the particle size, and Dmax is biased. When it is applied in the paste, it is easy to increase the printing broken grid, and the grid line will fall off after drying, that is, the printing performance is poor, and the drying window is narrow, but the glass powder D10 processed by the water mill is small, that is, it has a higher performance in sintering. Reactivity, the glass powder produced by this method has a better contact window; the glass powder produced by the sand milling process has a certain decrease in the particle size span, but there will still be a certain amount of powder removal during 3M tearing. The proportion of broken grids in the slurry is also reduced, and the electrical performance is slightly worse than that of the water mill; the glass frit made by the jet mill has the smallest span, and there is almost no broken grid in continuous printing, and 3M tearing has no powder removal, but the electrical performance It is also slightly worse than the water grinding method.
表4不同球磨工艺的玻璃粉粒径分布Table 4 The particle size distribution of glass powders of different ball milling processes
表5不同球磨工艺的玻璃粉性能对比Table 5 Performance comparison of glass powders with different ball milling processes
由表5可知,单一用水磨方式制作的玻璃粉,因D100偏大,而且粒径跨度较大,应用于浆料中时出现大量断栅,烘干后3M撕拉严重脱粉;单一用砂磨方式制作的玻璃粉,断栅比例明显变少,3M撕拉轻微脱粉;单一用气流磨制作的玻璃粉,应用于浆料中时几乎无断栅,且3M撕拉无脱粉,使用此工艺制作的玻璃粉EL和3M撕拉表现较好。It can be seen from Table 5 that the glass powder produced by the single water grinding method has a large D100 and a large particle size span, and a large number of grids are broken when it is applied to the slurry, and the 3M tearing is seriously de-powdered after drying; the single-use sand The glass powder made by grinding method has significantly less broken grid ratio, and the 3M tearing is slightly de-powdered; the glass powder made by single-jet mill has almost no broken grid when applied to the slurry, and the 3M tearing does not de-powder. The glass powder EL and 3M made by this process perform better in tearing.
由图7、图8性能对比结果可知,使用单一水磨方式制作的玻璃粉接触性能表现最好,能与氮化硅和氧化铝钝化结构形成较好的接触,使用单一砂磨和气流磨制作的玻璃粉接触性能有待提升。From the performance comparison results in Figure 7 and Figure 8, it can be seen that the contact performance of the glass frit made by a single water mill is the best, and it can form a good contact with the passivation structure of silicon nitride and aluminum oxide. The glass frit contact performance needs to be improved.
由结果可知三种球磨方式均有各自的特点,因此可以将其进行组合球磨,从而优选出最佳的球磨工艺。因此先用水磨方式将熔炼后的玻璃粉球磨至D50在20μm左右,然后分别进行砂磨和气流磨进行加工,对比性能的变化。It can be seen from the results that the three ball milling methods have their own characteristics, so they can be combined for ball milling to optimize the best ball milling process. Therefore, the smelted glass powder is firstly ball-milled with a water mill until the D50 is about 20 μm, and then processed by sand milling and jet milling respectively to compare the changes in performance.
实施例5Example 5
将实施例4中三种球磨方式进行组合球磨,从而优选出最佳的球磨工艺。因此先用水磨方式将熔炼后的玻璃粉球磨至D50在20μm左右,然后分别进行砂磨和气流磨进行加工,对比性能的变化。Three kinds of ball milling ways in embodiment 4 are carried out combined ball milling, thus preferably go out best ball milling process. Therefore, the smelted glass powder is firstly ball-milled with a water mill until the D50 is about 20 μm, and then processed by sand milling and jet milling respectively to compare the changes in performance.
水磨+砂磨方式的制作工艺为配料→混合→熔炼(1100℃下保温80min)→烘干(150℃)→球磨罐水磨(4h)→砂磨机球磨→过滤静置→烘干(150℃)→粉碎→成品玻璃粉。其中球磨过程采用的是4L的球磨罐,锆球采用四种,分别为直径为7毫米的圆形锆球:直径为7毫米的柱形锆球:直径为5毫米的圆形锆球:直径为5毫米的柱形锆球=2:2:1:1,锆球总质量为4Kg。其中砂磨机的主要调节参数为转速,设置为1000r/min,次数为两次。The production process of the water mill + sand mill method is batching → mixing → smelting (insulation at 1100°C for 80 minutes) → drying (150°C) → ball milling tank water milling (4h) → sand mill ball milling → filtering and standing → drying (150°C )→crushing→finished glass powder. Among them, the ball milling process adopts a 4L ball mill tank, and four kinds of zirconium balls are used, which are circular zirconium balls with a diameter of 7 mm: cylindrical zirconium balls with a diameter of 7 mm: circular zirconium balls with a diameter of 5 mm: 5 mm cylindrical zirconium balls = 2:2:1:1, the total mass of zirconium balls is 4Kg. Among them, the main adjustment parameter of the sand mill is the rotational speed, which is set to 1000r/min, and the number of times is twice.
水磨+气流磨方式的制作工艺为配料→混合→熔炼(1100℃下保温80min)→烘干(150℃)→球磨罐水磨(4h)→气流磨加工→烘干(150℃)→粉碎→成品玻璃粉。其中球磨过程采用的是4L的球磨罐,锆球采用四种,分别为直径为7毫米的圆形锆球:直径为7毫米的柱形锆球:直径为5毫米的圆形锆球:直径为5毫米的柱形锆球=2:2:1:1,锆球总质量为4Kg。其中气流磨球磨过程主要调节参数研磨气压,设置为0.65Mpa,调节分级轮转速,设置为100Hz。The production process of water mill + jet mill is batching→mixing→smelting (1100°C heat preservation for 80min)→drying (150°C)→ball mill tank water milling (4h)→jet mill processing→drying (150°C)→crushing→finished product glass powder. Among them, the ball milling process adopts a 4L ball mill tank, and four kinds of zirconium balls are used, which are circular zirconium balls with a diameter of 7 mm: cylindrical zirconium balls with a diameter of 7 mm: circular zirconium balls with a diameter of 5 mm: 5 mm cylindrical zirconium balls = 2:2:1:1, the total mass of zirconium balls is 4Kg. Among them, the main adjustment parameters of the jet milling process are the grinding air pressure, which is set to 0.65Mpa, and the speed of the classification wheel is adjusted, which is set to 100Hz.
表6改进后的球磨工艺的玻璃粉的粒径分布The particle size distribution of the glass powder of the improved ball milling process after table 6
由表6结果可知,使用组合球磨方式制作的玻璃粉D10都有一定程度的降低,D100有一定的增大,同时跨度也轻微增大。From the results in Table 6, it can be seen that the D10 of the glass frits produced by combined ball milling has decreased to a certain extent, and the D100 has increased to a certain extent, and the span has also slightly increased.
表7改进球磨工艺后的玻璃粉性能对比Table 7 Performance comparison of glass powder after improved ball milling process
由表7结果可知,使用水磨+砂磨工艺制作的玻璃粉应用于浆料中时还是会有大量断栅,3M撕拉轻微脱粉;使用水磨+气流磨制作的玻璃粉应用于浆料中时几乎无断栅,3M撕拉无脱粉,表现较好。From the results in Table 7, it can be seen that when the glass powder produced by water mill + sand mill is applied to the slurry, there will still be a large number of broken grids, and the 3M tearing will cause slight powder removal; the glass powder produced by water mill + jet mill is applied to the slurry There is almost no broken grid when tearing, and the 3M tearing has no powder removal, which is a good performance.
由图9和图10结果可知,使用水磨+气流磨制作的玻璃粉在接触性能和金属复合性能表现最好。From the results in Figure 9 and Figure 10, it can be seen that the glass powder made by water mill + jet mill has the best performance in contact performance and metal composite performance.
综合以上结果可知,经过改进后的球磨工艺,使用水磨+气流磨制作的玻璃粉各项性能表现均较好。Based on the above results, it can be seen that after the improved ball milling process, the performance of the glass powder made by water mill + jet mill is better.
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that, for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications can also be made. It should be regarded as the protection scope of the present invention.
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211600740.XA CN116062999A (en) | 2022-12-12 | 2022-12-12 | Glass powder combination and preparation method thereof, electronic paste and battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211600740.XA CN116062999A (en) | 2022-12-12 | 2022-12-12 | Glass powder combination and preparation method thereof, electronic paste and battery |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116062999A true CN116062999A (en) | 2023-05-05 |
Family
ID=86177851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211600740.XA Pending CN116062999A (en) | 2022-12-12 | 2022-12-12 | Glass powder combination and preparation method thereof, electronic paste and battery |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116062999A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117038146A (en) * | 2023-08-28 | 2023-11-10 | 江苏日御光伏新材料科技有限公司 | Positive silver main grid slurry for solar silicon wafer battery and preparation method thereof |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008156192A (en) * | 2006-12-26 | 2008-07-10 | Asahi Glass Co Ltd | Glass paste for dielectric |
CN102898024A (en) * | 2012-09-27 | 2013-01-30 | 广东风华高新科技股份有限公司 | Tellurium-containing glass material and preparation method and application thereof |
JP2016150883A (en) * | 2015-02-19 | 2016-08-22 | セントラル硝子株式会社 | Bi2O3-TeO2-SiO2-WO3-BASED GLASS |
CN111415766A (en) * | 2020-03-30 | 2020-07-14 | 成都银盛新材料有限公司 | Conductive paste for solar cell front electrode and preparation method and application |
CN113045207A (en) * | 2021-03-10 | 2021-06-29 | 浙江奕成科技有限公司 | Glass powder for TOPCON crystalline silicon solar cell back silver paste and preparation method thereof |
CN114213026A (en) * | 2021-12-20 | 2022-03-22 | 华东理工大学 | Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell |
CN114262157A (en) * | 2021-12-21 | 2022-04-01 | 广州市儒兴科技股份有限公司 | Glass powder composition and preparation method and application thereof |
CN114409262A (en) * | 2022-02-09 | 2022-04-29 | 广州市儒兴科技股份有限公司 | Conductive glass powder and preparation method thereof, conductive paste and preparation method and application thereof |
CN114538782A (en) * | 2020-11-26 | 2022-05-27 | 无锡帝科电子材料股份有限公司 | Glass powder for preparing solar cell electrode, paste composition including the same, solar cell electrode and solar cell |
CN114944238A (en) * | 2022-07-27 | 2022-08-26 | 西安宏星电子浆料科技股份有限公司 | Glass paste for conductive silver paste, preparation method of conductive silver paste and solar cell |
-
2022
- 2022-12-12 CN CN202211600740.XA patent/CN116062999A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008156192A (en) * | 2006-12-26 | 2008-07-10 | Asahi Glass Co Ltd | Glass paste for dielectric |
CN102898024A (en) * | 2012-09-27 | 2013-01-30 | 广东风华高新科技股份有限公司 | Tellurium-containing glass material and preparation method and application thereof |
JP2016150883A (en) * | 2015-02-19 | 2016-08-22 | セントラル硝子株式会社 | Bi2O3-TeO2-SiO2-WO3-BASED GLASS |
CN111415766A (en) * | 2020-03-30 | 2020-07-14 | 成都银盛新材料有限公司 | Conductive paste for solar cell front electrode and preparation method and application |
CN114538782A (en) * | 2020-11-26 | 2022-05-27 | 无锡帝科电子材料股份有限公司 | Glass powder for preparing solar cell electrode, paste composition including the same, solar cell electrode and solar cell |
CN113045207A (en) * | 2021-03-10 | 2021-06-29 | 浙江奕成科技有限公司 | Glass powder for TOPCON crystalline silicon solar cell back silver paste and preparation method thereof |
CN114213026A (en) * | 2021-12-20 | 2022-03-22 | 华东理工大学 | Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell |
CN114262157A (en) * | 2021-12-21 | 2022-04-01 | 广州市儒兴科技股份有限公司 | Glass powder composition and preparation method and application thereof |
CN114409262A (en) * | 2022-02-09 | 2022-04-29 | 广州市儒兴科技股份有限公司 | Conductive glass powder and preparation method thereof, conductive paste and preparation method and application thereof |
CN114944238A (en) * | 2022-07-27 | 2022-08-26 | 西安宏星电子浆料科技股份有限公司 | Glass paste for conductive silver paste, preparation method of conductive silver paste and solar cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117038146A (en) * | 2023-08-28 | 2023-11-10 | 江苏日御光伏新材料科技有限公司 | Positive silver main grid slurry for solar silicon wafer battery and preparation method thereof |
CN117038146B (en) * | 2023-08-28 | 2024-01-16 | 江苏日御光伏新材料科技有限公司 | Positive silver main grid slurry for solar silicon wafer battery and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102723121B (en) | Conductive adhesive composition for solar cell and solar cell module thereof | |
CN101609850B (en) | Lead-free silver conductor paste for front electrode of solar cell and preparation process thereof | |
CN101901844A (en) | A kind of solar cell conductive paste and preparation method thereof | |
US8884277B2 (en) | Thick film conductive composition and use thereof | |
CN102254587B (en) | Sizing agent for Al-BSF (Al-back surface field) of silicon solar cell and preparation method thereof | |
KR101497038B1 (en) | Ag paste composition for forming electrode and Preparation method thereof | |
CN110061074B (en) | A PERC solar cell | |
WO2022041538A1 (en) | Main gate high-tension silver paste for n-type solar cell and manufacturing method therefor | |
US20100252111A1 (en) | Paste composition and solar cell element | |
CN106935309A (en) | Passivating back crystal silicon solar energy battery aluminium paste and preparation method thereof | |
CN107068240A (en) | A kind of back silver paste | |
CN102360584B (en) | Carbon black additive-contained conductive slurry utilized by photovoltaic cell and preparation method thereof | |
CN107408586A (en) | Conductive paste for solar cell electrode formation | |
CN102881351B (en) | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry | |
US10475938B2 (en) | Process for producing conductive pastes for forming solar cell electrodes | |
CN109119181B (en) | Front silver paste for crystalline silicon solar cell and preparation method and application thereof | |
CN110120274A (en) | A kind of back electrode slurry of full Al-BSF and its preparation method and application | |
CN116062999A (en) | Glass powder combination and preparation method thereof, electronic paste and battery | |
KR101974096B1 (en) | Aluminum-based compositions and solar cells including aluminum-based compositions | |
CN109659068B (en) | Low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell | |
CN105637046A (en) | Conductive pastes or inks comprising nanometric chemical frits | |
CN102714237B (en) | Composition for manufacturing a back contact for a crystalline solar cell | |
TWI657119B (en) | Paste composition for rear electrode of solar cell | |
TWI705997B (en) | Composition for forming electrode for solar cell and solar cell | |
CN117457254A (en) | Low-silver single-printing front surface sizing agent for solar cell and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230526 Address after: Building 1, No. 16, Ruifa Road, Huangpu District, Guangzhou, Guangdong, 510700 Applicant after: Guangzhou Ruxing Technology Development Co.,Ltd. Applicant after: WUXI RUXING TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: Building 1, No. 16, Ruifa Road, Huangpu District, Guangzhou, Guangdong, 510700 Applicant before: Guangzhou Ruxing Technology Development Co.,Ltd. |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20230505 |