CN114213026A - Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell - Google Patents

Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell Download PDF

Info

Publication number
CN114213026A
CN114213026A CN202111557723.8A CN202111557723A CN114213026A CN 114213026 A CN114213026 A CN 114213026A CN 202111557723 A CN202111557723 A CN 202111557723A CN 114213026 A CN114213026 A CN 114213026A
Authority
CN
China
Prior art keywords
glass powder
silver
silicon
tellurite
silicate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111557723.8A
Other languages
Chinese (zh)
Inventor
仝华
江梓豪
杨云霞
孙辛杰
袁晓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
East China University of Science and Technology
Original Assignee
East China University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by East China University of Science and Technology filed Critical East China University of Science and Technology
Priority to CN202111557723.8A priority Critical patent/CN114213026A/en
Publication of CN114213026A publication Critical patent/CN114213026A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C12/00—Powdered glass; Bead compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

The invention discloses a complex system glass powder which is formed by combining tellurite, borate and silicate and is used for silver paste of a crystalline silicon solar cell secondary grid electrode. During the heating process of the auxiliary grid electrode silver paste sintering, the tellurite is firstly melted and spreads on the surface of the silicon, so that the sintering reaction between silicon and silver is blocked; then, the borate melts and etches through the antireflection layer on the surface of the silicon, and a silver silicon electrical conduction contact window is opened; finally, the silicate melts, inhibiting the erosion of the glass melt to the silicon surface and producing a passivation effect. During the cooling process after sintering, silver dissolved by tellurite and brought to the interface is separated out to form a large amount of silver colloid particles. Therefore, the complex glass powder provided by the invention has the characteristics of increasing effective contact of silver and silicon, reducing contact resistance, passivating the surface of the silicon and the like, and can obviously improve the application performance of the auxiliary gate electrode silver paste.

Description

Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell
Technical Field
The invention belongs to the field of inorganic powder functional materials, and particularly relates to a glass powder material, which is one of key components of a crystalline silicon solar cell silver paste. The complex glass powder provided by the invention is used for forming ohmic contact with the surface of a crystalline silicon solar cell and deriving a secondary grid electrode silver paste of photocurrent, and has the characteristics of increasing effective contact of silver and silicon, reducing contact resistance, passivating the surface of the silicon and the like.
Background
The crystalline silicon solar cell is a new energy device product which is widely applied. Screen-printed silver paste metallization is a key process for manufacturing surface electrodes of crystalline silicon solar cells, and typically uses three types of silver pastes, including cell front-side main and sub-gate electrode silver pastes, and back-side electrode silver pastes (except for TOPCon cells that use main and sub-gate electrode silver pastes on their back). The silver paste of the secondary grid electrode plays roles of forming ohmic contact with the silicon surface of the battery and leading out photocurrent. An antireflection layer with the thickness of about 80 nanometers is deposited on the surface of the crystalline silicon solar cell. In ideal metallization sintering, the silver paste of the sub-gate electrode needs to be etched completely through the anti-reflective layer to make electrically conductive contact with the silicon surface, but erosion of the silicon surface is not desirable because the heavily doped region is distributed only within a few tens of nanometers of the silicon surface. Therefore, the technical key of the auxiliary gate electrode silver paste lies in how to accurately control the sintering reaction of the silver paste on the nano-scale silver-silicon contact interface.
The crystalline silicon solar cell silver paste mainly comprises conductive phase silver powder, inorganic phase glass powder and an organic phase carrier. The content of the glass powder only accounts for 0.5-5% of the total mass of the silver paste, but the glass powder plays a decisive role in forming the silver-silicon ohmic contact. This is because there is no sintering adhesion between silver and silicon, the silver and silicon are in direct contact to generate a schottky barrier, and the silver itself cannot erode the antireflection film. In the sintering process of the auxiliary grid electrode silver paste, the glass powder contained in the auxiliary grid electrode silver paste has the following reaction: firstly, melting glass powder and flowing to the surface of silicon; then, the anti-reflection layer is corroded by the glass melt; and finally, the glass is in direct contact with the silicon surface, and a glass phase dielectric layer with the thickness of dozens of to hundreds of nanometers is formed between the silver and the silicon. It is the tunneling of electrons through the glass phase dielectric layer that achieves ohmic conduction between the silver and silicon. Thus, the glass frit is not only a binder for silver to silicon bonding, but also a key factor in forming a silver silicon ohmic contact. Researchers found that silver colloid particles in the glass phase medium layer have a close relationship with electron tunneling.
Along with the development of efficient crystalline silicon solar cells, silver paste metallization process puts higher and higher requirements on the performance of glass powder. First, the glass powder should have very good wettability and spread on the silicon surface, thereby increasing the effective contact of silver and silicon. Secondly, the glass powder has good capability of corroding the antireflection layer but cannot corrode silicon, and preferably has a passivation effect on the silicon surface so as to reduce recombination and improve the open-circuit voltage of the battery. Thirdly, a large amount of silver colloid particles need to be distributed in the glass phase of the silver-silicon contact interface, so that the contact resistance is reduced, and the tunneling current is improved.
Disclosure of Invention
Aiming at the problems that the composition system of glass powder used by the existing commercial auxiliary grid electrode silver paste is single and the excellent performance is difficult to play simultaneously in the aspect of multiple task requirements, the invention provides composite system glass powder formed by tellurite, borate and silicate. The tellurite has small surface tension, good wettability and strong silver dissolving capacity at high temperature, can promote the sintering of silver powder, can be fully spread on the silicon surface, and can separate out a large amount of silver colloid particles in the cooling process; the borate can contain a large amount of active ingredients such as lead oxide and the like, and has strong and easily-controlled capability of eroding the antireflection layer; the silicate contains a large amount of inert components such as silicon oxide, so that the corrosion of the glass to the silicon surface can be effectively inhibited, and the passivation effect is achieved.
According to the practical situation of silver paste metallization sintering of the secondary grid electrode, the tellurite, the borate and the silicate are regulated and controlled to respectively play the following specific effects at different temperature stages.
(1) The tellurite is 400-500%oC, melting and flowing to an interface, spreading on the silicon surface, and blocking the sintering reaction between silver and silicon; during this process, some of the silver dissolves into the tellurite and is brought to the interface.
(2) The borate is 500-600%oAnd C, melting and flowing to the interface, wherein active groups such as lead oxide contained in the silver silicon conductive silver alloy undergo corrosion reaction with the anti-reflection layer material, and a silver silicon conductive contact window is opened.
(3) The silicate is 550-650oC begins to melt and flow to the interface, and contains inert radicals such as silicon oxideThe clusters not only prevent the glass melt from continuing to attack silicon after the anti-reflection layer is etched, but also passivate the silicon surface.
(4) In the process of cooling, silver brought to the interface by the tellurite is separated out, and a large number of colloidal particles with the size of several nanometers to dozens of nanometers are generated.
The chemical composition of the tellurite comprises 20-60% of TeO in terms of oxide mole percentage210 to 40% of Li2O, 5-20% of WO3And 0 to 20% of Na2O、K2O、Ag2O、CuO、CaO、Cr2O3、Mo2O3、CeO2And the like. The glass phase transition temperature is 230-330oC. The melting temperature is 400-500 deg.CoC. D of tellurite glass powder in the composite system glass powder50The particle size is 0.5-3.0 microns.
The chemical composition of the borate comprises 20-60% of B in terms of mole percent of oxide2O320-60% of PbO and 0-20% of Li2O、Na2O、K2O、ZnO、Y2O3、Ga2O3、CeO2And the like. The glass phase transition temperature is 280-380 deg.CoC. The melting temperature is 500-600 deg.CoC. D of borate glass powder in the composite glass powder50The particle size is 0.5-3.0 microns.
The chemical composition of the silicate comprises 10-50% of SiO in terms of mole percent of oxide210 to 50% of Bi2O35 to 20% of Na2O and 0 to 20% of Li2O、K2O、ZnO、MgO、Al2O3、TiO2、ZrO2And the like. The glass phase transition temperature is 350-450 DEG CoC. The melting temperature is 550-650oC. D of silicate glass powder in the composite glass powder50The particle size is 0.5-3.0 microns.
The composite glass powder is formed by mixing 10-50% of tellurite, 10-50% of borate and 10-50% of silicate in mass ratio. According to the specific application requirements of the secondary grid electrode silver paste, the optimal synergistic effect is obtained by adjusting the using amount of the complex system glass powder and the proportion of tellurite, borate and silicate contained in the complex system glass powder.
According to the complex glass powder, tellurite, borate and silicate glass powder are prepared respectively, and the general preparation steps are as follows.
(1) The raw materials are weighed according to the composition and the proportion respectively, and fully mixed for 30-60 minutes by using a mixer.
(2) Loading the mixed raw materials by using a corundum crucible, and placing the corundum crucible in a high-temperature resistance furnace for melting: the melting temperature of the tellurite is 900-1000 DEGoC. The time is 20-40 minutes; the melting temperature of the borate is 1000-1100%oC. The time is 30-40 minutes; the melting temperature of the silicate is 1100-1250oC. The time is 30-60 minutes.
(3) And taking out the crucible, and quickly pouring the glass melt into deionized water for water quenching or cold rolling on a double-roller machine to obtain the glass slag.
(4) Putting the glass cullet and agate balls with the same mass and the particle size of 10mm into an agate tank, and grinding for 20-60 minutes at 300 revolutions per minute by using a ball mill to obtain D50Glass coarse powder with the particle size of 10-20 microns.
(5) Charging 1 part of coarse glass powder, 3 parts of 3mm agate balls and 3 parts of absolute ethyl alcohol into an agate tank by mass, and grinding for 30-150 minutes at 400 revolutions per minute by using a ball mill to obtain D50And the glass powder has the particle size of 0.5-3 microns.
(6) And drying the ground glass powder at 80-120 ℃, and screening the glass powder with a 200-mesh screen to obtain a finished product.
The tellurite, borate and silicate glass powder prepared in the steps are fully and uniformly mixed according to the mass ratio of the invention, and then the complex system glass powder is obtained.
Compared with the existing commercial monomer system glass powder, the composite system glass powder provided by the invention can obviously improve the application performance of the crystalline silicon solar cell secondary grid electrode silver paste, and has the following specific beneficial effects.
(1) The effective contact of silver and silicon is increased, and the contact resistance is reduced. The tellurite in the complex glass powder has lower melting temperature and better wetting property, and can spread the silicon surface earlier, thereby increasing the effective contact area of the silver electrode and the silicon and blocking the silver-silicon sintering reaction. In addition, the tellurite has strong silver dissolving capacity, a large amount of silver colloid particles are separated out in the cooling process after sintering, the electron tunneling probability is improved, and the contact resistance is reduced.
(2) The interface reaction is effectively controlled, and the open-circuit voltage of the battery is improved. The borate in the complex glass powder is melted after tellurite, and the complex glass powder can contain a large amount of active ingredients such as lead oxide and the like, so that the complex glass powder has strong capability of eroding an antireflection layer and is easy to regulate and control. The silicate is finally melted, and the reaction activity of the glass melt is sharply weakened after the silicate reaches the interface due to the fact that the silicate contains a large amount of inert components such as silicon oxide, the glass is prevented from corroding the surface of the silicon, the passivation effect is achieved, and the open-circuit voltage of the battery is improved.
Detailed Description
In order to make the technical solution, objects and advantages of the present invention clearer and more detailed, the following examples illustrate the present invention in further detail, which are only used for explaining the present invention and are not used for limiting the present invention.
Example 1
A complex glass powder for a crystalline silicon solar cell secondary gate electrode silver paste is applied to a monocrystalline silicon SE-PERC cell.
Firstly, glass powders of tellurite T1, borate B1 and silicate S1 are respectively prepared, and the specific steps are as follows.
(1) Preparing and mixing materials: the raw materials of tellurite T1, borate B1 and silicate S1 were weighed out in the proportions of the oxides listed in tables 1 to 3, and then thoroughly mixed for 40 minutes using a mixer.
(2) Melting glass: the raw materials of tellurite T1, borate B1 and silicate S1 are respectively loaded into a corundum crucible and placed in a high-temperature resistance furnace for melting. The melting temperature of the tellurite T1 is 950oC. The time is 30 minutes; boronThe melting temperature of the acid salt B1 is 1050oC. The time is 40 minutes; the melting temperature of the silicate S1 was 1200oC. The time period required was 50 minutes.
(3) Water quenching of glass melt: and respectively and quickly pouring the glass melt of tellurite T1, borate B1 and silicate S1 into deionized water for water quenching to obtain glass slag.
(4) Coarse grinding of glass powder: respectively putting the three glass fragments and agate balls with the same mass and the particle size of 10mm into three agate tanks, and grinding by using a ball mill at 300 revolutions per minute to obtain D50Coarse glass powder with a particle size of 15 microns. The grinding time of the tellurite T1 is 25 minutes; milling time of borate B1 was 30 minutes; the milling time for the silicate S1 was 40 minutes.
(5) Finely grinding glass powder: by mass, three kinds of coarse glass powder are respectively filled into three agate tanks together with 3 times of agate balls with the particle size of 3mm and 3 times of absolute ethyl alcohol, and the mixture is ground by a ball mill at 400 revolutions per minute to obtain D50Glass powder with the particle size of 1.5 microns. The grinding time of the tellurite T1 is 60 minutes; milling time of borate B1 was 85 minutes; the milling time for the silicate S1 was 120 minutes.
(6) And drying the ground glass powder at 100 ℃, and screening the glass powder by a 200-mesh screen to obtain a finished product.
The prepared tellurite T1, borate B1 and silicate S1 glass powder are fully and uniformly mixed according to the mass ratio listed in Table 4, and then the composite glass powder F1-F5 is obtained.
The composite glass powder F1-F5 is used for silver paste of a crystalline silicon solar cell secondary grid electrode. The preparation of the silver paste comprises the following steps: the glass powder, the silver powder and the organic carrier are accurately weighed according to the mass ratio of 2.2: 89.8: 8.0, are manually stirred and mixed, and are fully mixed by a three-roll grinder. Wherein, the silver powder and the organic carrier are commercial products.
And testing the secondary gate electrode silver paste containing the composite glass powder F1-F5 on a monocrystalline silicon SE-PERC battery production line. The cell size is 166cm multiplied by 166cm, the square resistance of a front emitter is 140 omega/□, the square resistance of an SE region is 90 omega/□, and an antireflection layer is Si prepared by PECVD and has the thickness of about 80nm3Nx(ii) a The front main grid electrode, the back aluminum electrode and the back silver electrode of the battery are all commercial silver paste and aluminum paste by adopting production lines; the slurry printing and the metallization sintering both adopt production line process parameters, wherein the sintering peak temperature is 750-760 ℃.
Compared with the commercial auxiliary grid electrode silver paste of a production line, the auxiliary grid electrode silver paste containing the composite glass powder F1-F5 can obviously improve the electrical performance and the energy conversion efficiency of the single crystal silicon SE-PERC battery. As shown in Table 5, the contact resistivity of the silver electrode of the sub-grid is reduced by 0.09-0.31 m omega cm2The open-circuit voltage of the battery is increased by 0.93-1.46 mV, so that the short-circuit current and the filling factor are respectively increased by 13-17 mA and 0.10-0.16 percentage point, and the energy conversion efficiency of the battery is increased by 0.08-0.15 percentage point.
The data listed in table 5 show that increasing the tellurite T1 content in the composite system glass powder is beneficial to reducing the contact resistivity of the sub-grid silver electrode, increasing the short-circuit current and the fill factor; and the reduction of the content of the borate B1 or the increase of the content of the silicate S1 is beneficial to the improvement of the open-circuit voltage. The composite glass powder F3 has a more optimized composition ratio, so that the energy conversion efficiency of the battery is improved by 0.15 percent.
Table 1: chemical composition of tellurite T1.
Figure 373831DEST_PATH_IMAGE001
Table 2: chemical composition of borate B1.
Figure 226250DEST_PATH_IMAGE002
Table 3: chemical composition of silicate S1.
Figure 630115DEST_PATH_IMAGE003
Table 4: the composite glass powder comprises the following components in percentage by mass of F1-F5.
Figure 491761DEST_PATH_IMAGE004
Table 5: compared with the commercial silver paste for the production line, the secondary grid electrode silver paste containing the composite glass powder F1-F5 is adopted to obtain the battery performance gain.
Figure 375666DEST_PATH_IMAGE005
Example 2
A complex glass powder for a crystalline silicon solar cell secondary grid electrode silver paste is applied to a high-sheet-resistance monocrystalline silicon PERC cell.
Firstly, glass powders of tellurite T2, borate B2 and silicate S2 are respectively prepared, and the specific steps are as follows.
(1) Preparing and mixing materials: the raw materials of tellurite T2, borate B2 and silicate S2 were weighed out in the proportions of the oxides listed in tables 6 to 8, and then thoroughly mixed for 40 minutes using a mixer.
(2) Melting glass: the raw materials of tellurite T2, borate B2 and silicate S2 are respectively loaded into a corundum crucible and placed in a high-temperature resistance furnace for melting. The melting temperature of the tellurite T2 is 900oC. The time is 30 minutes; the melting temperature of the borate B2 was 1000oC. The time is 40 minutes; the melting temperature of the silicate S2 was 1150oC. The time period required was 50 minutes.
(3) Water quenching of glass melt: and respectively and quickly pouring the glass melt of tellurite T2, borate B2 and silicate S2 into deionized water for water quenching to obtain glass slag.
(4) Coarse grinding of glass powder: respectively putting the three glass fragments and agate balls with the same mass and the particle size of 10mm into three agate tanks, and grinding by using a ball mill at 300 revolutions per minute to obtain D50Coarse glass powder with a particle size of 15 microns. The grinding time of the tellurite T2 is 20 minutes; milling time of borate B2 was 30 minutes; the milling time for the silicate S2 was 40 minutes.
(5) Finely grinding glass powder: by mass, three kinds of glassesThe coarse powder is respectively filled into three agate jars together with 3 times of mass of agate balls with the particle size of 3mm and 3 times of mass of absolute ethyl alcohol, and the mixture is ground by a ball mill at 400 revolutions per minute to obtain D50Glass powder with the particle size of 2.0 microns. The milling time of tellurite T2 was 45 minutes, that of borate B2 was 60 minutes, and that of silicate S2 was 100 minutes.
(6) And drying the ground glass powder at 100 ℃, and screening the glass powder by a 200-mesh screen to obtain a finished product.
The glass powders of tellurite T2, borate B2 and silicate S2 prepared above were mixed well and uniformly in the mass ratios listed in table 9, to obtain composite system glass powders F6 to F10.
The composite glass powder F6-F10 is used for silver paste of a crystalline silicon solar cell secondary grid electrode. The preparation of the silver paste comprises the following steps: the glass powder, the silver powder and the organic carrier are accurately weighed according to the mass ratio of 2.4: 89.8: 7.8, are manually stirred and mixed, and are fully mixed by a three-roll grinder. Wherein, the silver powder and the organic carrier are commercial products.
And testing the secondary gate electrode silver paste containing the composite glass powder F6-F10 on a high-sheet-resistance monocrystalline silicon PERC battery production line. The size of the cell is 156cm multiplied by 156cm, the square resistance of the emitter on the front side is 140 omega/□, and the antireflection layer comprises a layer of Al which is prepared by ALD and has the thickness of 3-6 nm2OxAnd a layer of PECVD prepared Si having a thickness of about 80nm3Nx(ii) a The front main grid electrode, the back aluminum electrode and the back silver electrode of the battery are all commercial silver paste and aluminum paste by adopting production lines; production line technological parameters are adopted for slurry printing and metallization sintering, wherein the sintering peak temperature is 750-770 ℃.
Compared with the commercial auxiliary grid electrode silver paste of a production line, the auxiliary grid electrode silver paste containing the composite glass powder F6-F10 can obviously improve the electrical property and the energy conversion efficiency of the high-sheet-resistance monocrystalline silicon PERC battery. As shown in Table 10, the contact resistivity of the silver sub-grid electrode was reduced by 0.06-0.24 m Ω. cm2The open-circuit voltage of the battery is increased by 0.97-1.44 mV, so that the short-circuit current and the filling factor are respectively increased by 11-15 mA and 0.11-23 percentage points, and the energy conversion efficiency of the battery is increased by 0.08-0.16 percentage point.
The data listed in table 10 show that increasing the tellurite T2 content in the composite system glass powder is beneficial to reducing the contact resistivity of the sub-grid silver electrode, increasing the short-circuit current and the fill factor; and the reduction of the content of the borate B2 or the increase of the content of the silicate S2 is beneficial to the improvement of the open-circuit voltage. The composite glass powder F9 has a more optimized composition ratio, so that the energy conversion efficiency of the battery is improved by 0.16 percentage points.
Table 6: chemical composition of tellurite T2.
Figure 930144DEST_PATH_IMAGE006
Table 7: chemical composition of borate B2.
Figure 532289DEST_PATH_IMAGE007
Table 8: chemical composition of silicate S2.
Figure 932046DEST_PATH_IMAGE008
Table 9: the composite glass frit comprises the following components in percentage by mass, namely F6 to F10.
Figure 60670DEST_PATH_IMAGE009
Table 10: compared with the commercial silver paste for the production line, the secondary grid electrode silver paste containing the composite glass powder F6-F10 is adopted to obtain the battery performance gain.
Figure 254891DEST_PATH_IMAGE010
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition. Any simple modifications and equivalent changes made to the above-described embodiments in accordance with the technical spirit of the present invention are within the scope of the technical solution of the present invention.

Claims (5)

1. The complex glass powder for the crystalline silicon solar cell secondary grid electrode silver paste is characterized by comprising tellurite, borate and silicate which are specifically composed of the following components in combination:
(1) the chemical composition of the tellurite comprises 20-60% of TeO in terms of mole percent of oxide210 to 40% of Li2O, 5-20% of WO3And 0 to 20% of Na2O、K2O、Ag2O、CuO、CaO、Cr2O3、Mo2O3、CeO2One or more of the following;
(2) the chemical composition of the borate comprises 20-60% of B in terms of mole percent of oxide2O320-60% of PbO and 0-20% of Li2O、Na2O、K2O、ZnO、Y2O3、Ga2O3、CeO2One or more of the following;
(3) the chemical composition of the silicate comprises 10-50% of SiO in terms of mole percent of oxide210 to 50% of Bi2O35 to 20% of Na2O and 0 to 20% of Li2O、K2O、ZnO、MgO、Al2O3、TiO2、ZrO2And the like.
2. The composite glass powder according to claim 1, wherein the tellurite has a glass phase transition temperature of 230 to 330%oC. The melting temperature is 400-500 deg.CoC。
3. The composite glass powder according to claim 1, wherein the glass transition temperature of the borate is 280 to 380%oC. The melting temperature is 500-60 DEG C0oC。
4. The composite glass powder according to claim 1, wherein the silicate has a glass phase transition temperature of 350 to 450%oC. The melting temperature is 550-650oC。
5. The composite glass powder according to claim 1, wherein the composite glass powder comprises 10 to 50% by mass of tellurite, 10 to 50% by mass of borate, and 10 to 50% by mass of silicate.
CN202111557723.8A 2021-12-20 2021-12-20 Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell Pending CN114213026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111557723.8A CN114213026A (en) 2021-12-20 2021-12-20 Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111557723.8A CN114213026A (en) 2021-12-20 2021-12-20 Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell

Publications (1)

Publication Number Publication Date
CN114213026A true CN114213026A (en) 2022-03-22

Family

ID=80704179

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111557723.8A Pending CN114213026A (en) 2021-12-20 2021-12-20 Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell

Country Status (1)

Country Link
CN (1) CN114213026A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114530273A (en) * 2022-03-29 2022-05-24 晶澜光电科技(江苏)有限公司 Oxide solid solution composite co-sintered microcrystalline powder for conductive paste, conductive paste and solar cell
CN116062999A (en) * 2022-12-12 2023-05-05 广州市儒兴科技股份有限公司 Glass powder combination and preparation method thereof, electronic paste and battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114530273A (en) * 2022-03-29 2022-05-24 晶澜光电科技(江苏)有限公司 Oxide solid solution composite co-sintered microcrystalline powder for conductive paste, conductive paste and solar cell
CN114530273B (en) * 2022-03-29 2023-10-20 晶澜光电科技(江苏)有限公司 Oxide solid solution composite co-sintered microcrystalline powder for conductive paste, conductive paste and solar cell
CN116062999A (en) * 2022-12-12 2023-05-05 广州市儒兴科技股份有限公司 Glass powder combination and preparation method thereof, electronic paste and battery

Similar Documents

Publication Publication Date Title
CN114213026A (en) Complex glass powder for silver paste of auxiliary grid electrode of crystalline silicon solar cell
CN102123961A (en) Lead-free glass frit powder for manufacturing silicon solar cell, preparation method thereof, metal paste composition comprising same, and silicon solar cell
TW201145311A (en) Thick-film pastes containing lead-and tellurium-oxides, and their use in the manufacture of semiconductor devices
CN111028976B (en) Back silver paste for all-aluminum back surface field solar cell
CN102476919A (en) Glass powder and its preparation method and conductive paste for solar cell
CN106935309B (en) Passivating back crystal silicon solar energy battery aluminium paste and preparation method thereof
US11756699B1 (en) Conductive silver aluminum paste, preparation method, electrode and cell
JP2015525181A (en) Glass compositions and their use in conductive silver pastes
US20130186463A1 (en) Conductive silver paste for a metal-wrap-through silicon solar cell
CN105190904A (en) Method of manufacturing electrode of solar cell and solar cell using same
CN106098144A (en) A kind of glass dust and with its solar cell front side silver paste prepared and preparation method thereof
WO2023124495A1 (en) Glass powder for thick film silver paste adapting to crystalline silicon p+ layer contact and preparation method therefor
CN113443833A (en) Glass composition for front silver paste of crystalline silicon PERC battery and preparation method thereof
CN111902881B (en) Conductive paste, solar cell prepared from conductive paste and manufacturing method of solar cell
CN115504674B (en) Glass powder for front surface sizing agent of N-type solar cell and preparation method thereof
CN105810284A (en) Slurry for silicon solar cell
CN110255889B (en) Glass composition for crystalline silicon solar double-side passivated PERC cell front silver paste and preparation method thereof
WO2020238367A1 (en) Conductive paste, solar cell prepared therefrom and manufacturing method therefor
CN110255888B (en) Glass composition for crystalline silicon solar PERC cell front silver paste and preparation method thereof
CN109166646B (en) Environment-friendly aluminum electrode paste for back-passivated silicon solar cell
CN116130141B (en) Electrode slurry and preparation method and application thereof
CN112830682A (en) Glass material for solar cell conductive paste and preparation method and application thereof
CN109493993B (en) Silver paste for front electrode of crystalline silicon solar cell and preparation method thereof
CN110342827A (en) A kind of low temperature modification glass powder and its application in the dual layer passivation Perc battery of front
WO2019085576A1 (en) Multiple nanomaterial for preparing solar cell electrode, paste composition comprising same, solar cell electrode and cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication