CN116056533A - Perovskite precursor solution, perovskite film, and preparation methods and applications thereof - Google Patents
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Abstract
The invention discloses a perovskite precursor solution and a perovskite film as well as preparation methods and applications thereof, wherein the perovskite precursor solution comprises lead iodide, methyl iodized amine, an organic solvent and octyl amine chloride; the perovskite film is obtained by adopting the perovskite precursor solution spin coating and the near infrared radiation treatment. According to the invention, the additive octyl amine chloride (OACl) is added in the preparation process of the perovskite precursor solution to enhance the hydrophobicity of perovskite and increase the grain size of perovskite, so that the stability and performance of the perovskite solar cell are improved. The invention also adopts a near infrared method to directly heat the perovskite precursor solution to achieve the effect of quickly removing the solvent, controls the temperature and the solvent evaporation rate through the irradiation time, and compared with the prior art, which drops the antisolvent in the spin coating process to quickly remove the organic solvent, the invention is more convenient to operate and greatly reduces the potential safety hazard.
Description
Technical Field
The invention relates to the technical field of thin film solar cells, in particular to a perovskite precursor solution, a perovskite thin film, and a preparation method and application thereof.
Background
Since the 21 st century, global energy is mainly fossil energy, which causes a great deal of pollution to the environment, so clean and pollution-free new energy is used as the main energy for future use. New energy sources such as ocean energy, wind energy, solar energy and the like have become important components in the energy structure of China. Solar energy is one of the cleanest and cheapest forms of energy. The photovoltaic power generation is used as a utilization form for utilizing solar radiation energy, and has the characteristics of cleanness and sustainable utilization. And Perovskite Solar Cells (PSCs) are used as third-generation solar cells, and have the advantages of low cost, high efficiency, simple preparation and the like, and are widely studied by scientists in recent years. Perovskite solar cells are devices that use photovoltaic efficiency to generate electrical energy, in which excitons in the perovskite layer are dissociated to generate free carriers under sunlight. Wherein electrons are free to move to the cathode and holes are free to move to the anode, creating a potential difference that results in current flow. The organic-inorganic perovskite has a high absorption coefficient, an adjustable band gap, a long carrier lifetime such that it has an ultra-high Power Conversion Efficiency (PCE), currently exceeding 25%.
The perovskite film prepared by the prior art has a large number of defects on the surface, such as point defects (I-vacancies and Pb < 2+ > vacancies) and surface defects (holes and high roughness), the hydrophilicity of the material itself causes extremely sensitivity to humidity and temperature, and the stability is low, so that the performance of the perovskite film is reduced rapidly. The perovskite film prepared by the spin coating method has the advantages of simple process, easy operation and the like. In general, perovskite thin films are prepared by spin coating to obtain perovskite wet films, dripping an anti-solvent in the spin coating process to rapidly remove the organic solvent, and then placing the perovskite wet films in a heating table for annealing and crystallization to form the perovskite thin films. This method has certain drawbacks, such as very accurate window time for the anti-solvent to drop, or else, a large number of defects are formed, resulting in reduced performance of the perovskite solar cell, and most of the anti-solvents have strong toxicity and potential safety hazard. Therefore, perovskite precursor solution for preparing perovskite thin films needs to be optimized and thin film preparation technology needs to be improved to improve the performance of perovskite solar cells.
Disclosure of Invention
Aiming at the technical problems that the perovskite film prepared by the prior art has a large number of defects and potential safety hazards exist due to the use of an antisolvent in the preparation process, the invention aims to provide a perovskite precursor solution and a perovskite film which can improve the stability and performance of a perovskite solar cell, and a preparation method and application thereof
One of the objects of the present invention is to provide a perovskite precursor solution comprising lead iodide (PbI) 2 ) Methyl iodinated amine (MAI), organic solvents and octylammonium chloride (OACl).
Preferably, the concentration of the lead iodide is 0.8-1.2 mol/L; the concentration of the methyl iodized amine is 0.8-1.2 mol/L; the molar concentration of the octyl amine chloride is 1-5% of the molar concentration of the lead iodide;
the organic solvent is a mixed solution of Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and the volume ratio of the dimethylformamide to the dimethyl sulfoxide is 5:1 to 9:1.
another object of the present invention is to provide a method for preparing a perovskite thin film, comprising the steps of:
s1, preparing an electron transport layer on a clean substrate;
s2, preheating the perovskite precursor solution according to claim 1 or 2 and the substrate prepared in the step S1;
s3, spin-coating the preheated perovskite precursor solution on the preheated substrate to obtain a perovskite wet film, and radiating the perovskite wet film by near infrared light in the spin-coating process to obtain a perovskite film.
Preferably, the method further comprises
And S4, annealing the perovskite film obtained in the step S3.
Preferably, the preheating in step S2 means: heating the substrate at 100-120 ℃ for 5-8 min, and heating the perovskite precursor solution to 50-70 ℃;
the spin coating in step S3 means: spin-coating 30-50 mu L of the perovskite precursor solution on 1X 1cm 2 Spin coating speed is 3000 r/min-4000 r on the substrateThe spin coating time is 25-30 s; the irradiation means that near infrared light is used for irradiating the perovskite wet film at a position 20 cm-30 cm away from the perovskite wet film when the spin coating is finished for 15-25 s, the irradiation time is 15-25 s, and the irradiation intensity is 5-7W/sr.
Preferably, the step S1 is that the cleaned substrate is sequentially ultrasonically cleaned for 15-20 min by 100-130 mL of ethanol, a detergent, deionized water and ethanol; drying at 50-70 deg.c for 5-10 min, and then ultraviolet ozone treatment for 15-20 min with the ultraviolet ozone light intensity of 28-32 mW/cm;
the preparation of the electron transport layer in step S1 means: taking 15-17 wt% of water dispersion of tin dioxide and ultrapure water according to the volume ratio of 1:5, mixing to obtain tin oxide solution, and then coating 50-60 mu L of the tin oxide solution on 1X 1cm 2 And then annealing the substrate at 140-150 ℃ for 25-30 min to obtain the tin dioxide electron transport layer.
Preferably, the perovskite precursor solution in step S2 means: dissolving 0.8-1.2 mmol of lead iodide and 0.8-1.2 mmol of methyl iodized amine in 1mL of organic solvent, and then adding octyl amine chloride and fully stirring for 5-8 h to obtain perovskite precursor solution; wherein the molar amount of the octyl amine chloride is 1-5% of the molar amount of the lead iodide;
the organic solvent is a mixed solution of dimethylformamide and dimethyl sulfoxide, and the molar ratio of the dimethylformamide to the dimethyl sulfoxide is 5:1 to 9:1.
preferably, the annealing in step S4 means: and (3) heating the perovskite film obtained in the step (S3) at 100-120 ℃ for 5-10 min.
It is still another object of the present invention to provide the use of a perovskite thin film as a light absorbing layer for a perovskite solar cell.
Preferably, the light absorption layer of the perovskite solar cell is a perovskite layer;
the perovskite solar cell comprises the following structures in sequence: the device comprises a glass substrate, an electron transport layer, a perovskite layer, a hole transport layer and a metal electrode; or the perovskite solar cell structure sequentially comprises: the electron transport layer is arranged on the perovskite layer.
The invention has the positive progress effects that:
the invention improves the performance of perovskite thin films by adding an additive octyl amine chloride (OACl) during the preparation of the perovskite precursor solution. The amino moiety in the OACl may be compatible with Pb in the perovskite layer 2+ Vacancies combine, while Cl can combine with I in the perovskite layer - The vacancy combines to play a role in passivating the defects of the perovskite layer. The perovskite layer is sensitive to moisture and is largely decomposed in an environment with high humidity, and long alkyl chains are provided in the OACl, so that the hydrophobicity of perovskite can be enhanced, the grain size of the perovskite can be increased, and the stability and the performance of the perovskite solar cell can be improved. Meanwhile, the near infrared method is adopted to directly heat the perovskite precursor solution to achieve the effect of quickly removing the solvent, the temperature and the solvent evaporation rate are controlled through the irradiation time, and compared with the prior art, the method is used for quickly removing the organic solvent by dripping the anti-solvent in the spin coating process, is more convenient to operate and greatly reduces the potential safety hazard. In addition, the preparation method combined with a carbon electrode and an additive octyl amine chloride (OACl) by a near infrared method can realize the production of stable Perovskite Solar Cells (PSCs) with low cost and high performance, and is very important for the development strategy for achieving carbon neutralization in the future.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Examples 1-3 perovskite solar cells were prepared with the cell structure of a glass substrate, an electron transport layer, a perovskite layer, a hole transport layer and a metal electrode silver in that order, the glass substrate being indium tin oxide (ITO substrate).
Step S1, on the cleaned substrateAn electron transport layer is prepared. Will be 1X 1cm 2 Indium Tin Oxide (ITO) glass substrate is sequentially arranged on V Cleaning solution Ultrasonic cleaning T in mL ethanol, detergent, ultrapure water and ethanol Ultrasonic cleaning After min, putting the cleaned glass substrate into an oven for T Drying Drying at a temperature of t Drying min, carrying out ultraviolet ozone treatment t on the dried glass substrate Ultraviolet ozone treatment And (5) min. 200 mu L of a 15wt% tin dioxide (SnO 2) aqueous dispersion solution was mixed with 1mL of ultrapure water, and the mixture was sufficiently stirred to obtain a tin dioxide colloidal dispersion solution and ultrapure water in a volume ratio of 1:5, then taking V Tin oxide mu.L of tin oxide solution was applied to 1X 1cm 2 Is arranged on the ITO glass substrate of T Annealing Annealing t on a heating table at DEG C Annealing And obtaining the tin dioxide electron transport layer after min.
And S2, preheating the perovskite precursor solution and the substrate prepared in the step S1. Weigh n Lead iodide mmol lead iodide (PbI) 2 ) And n Methyl iodinated amine mmol methyl iodinated amine (MAI) was dissolved in dimethyl sulfoxide (DMSO) and Dimethylformamide (DMF) at a volume ratio of 9:1 (total amount of mixed solvent is 1 mL), and then n is added Octyl amine chloride mmol of octylamine chloride (OACl), thoroughly stirred t Stirring h, obtaining perovskite precursor solution.
Treating the glass substrate with the electron transport layer deposited in step S1 with ultraviolet ozone for 15min, and placing the glass substrate containing electron transport layer at T Preheating substrate Preheating t on heating table at DEG C Preheating substrate min, and heating the perovskite precursor solution to T Precursor solution ℃。
And S3, spin-coating the preheated perovskite precursor solution on the preheated substrate to obtain a perovskite wet film, and radiating the perovskite wet film by near infrared light in the spin-coating process to obtain a perovskite film. Putting the preheated glass substrate into a KW-4A spin coater at a distance of 1X 1cm 2 Spin-coating V on surface of tin dioxide electron transport layer Precursor solution Mu L of the perovskite precursor solution is used for obtaining a perovskite wet film, and the spin coating speed is V Spin coating r/min, spin coatingTime t Spin coating s, t before the end of spin coating Near infrared light S near infrared light is used to obtain a distance from the perovskite wet film S Distance of radiation Radiation treatment t of perovskite wet film at cm Near infrared light s to obtain the perovskite thin film.
And S4, annealing the perovskite film obtained in the step S3. Placing the perovskite film obtained in the step S3 at T Heating film Heating t on a heating table at DEG C Heating film The length of the reaction vessel is 1X 1cm 2 Is a perovskite layer.
And step S5a, spin-coating a hole transport layer on the perovskite layer obtained in the step S4 by using a solution, and sufficiently oxidizing to obtain the hole transport layer. The solution for hole transport layer is 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino group]-9,9' -spirobifluorene solution, prepared by: 520mg of lithium bistrifluoromethane yellow imide (Li-TFSI) was dissolved in 1mL of acetonitrile to obtain a lithium bistrifluoromethane yellow imide solution, and 72.3mg of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino group was introduced in the rear direction]To-9, 9' -spirobifluorene (spiroOMeTAD) was added 17.5 μl of lithium bistrifluoromethane yellow imide solution, 28.8 μl of 4-tert-butylpyridine and 1mL of chlorobenzene, and the mixture was stirred well overnight to obtain a clear solution for hole transport layer. Rear take V Solution for hole transport layer mu.L of the hole transport layer was spin-coated with the solution obtained in step S4 to 1X 1cm 2 And on the perovskite layer, the spin coating speed is 4000r/min, the spin coating time is 30s, and the hole transport layer is obtained by oxidizing the perovskite layer in air for 24 h.
And S6, evaporating a metal electrode on the hole transport layer. The silver electrode was evaporated by a ZHDS400 evaporator, and silver metal was evaporated in a high vacuum to plate onto the hole transport layer in step S5 to obtain a silver electrode.
Examples 4 to 6 perovskite solar cells were prepared in which the cell structure was a glass substrate, an electron transport layer, a perovskite layer and a carbon electrode in this order, and the glass substrate was indium tin oxide (ITO substrate).
Step S1, preparing an electron transport layer on a cleaned substrate. Will be 1X 1cm 2 Indium Tin Oxide (ITO) glass substrate is sequentially arranged on V Cleaning solution Ultrasonic cleaning T in mL ethanol, detergent, ultrapure water and ethanol Ultrasonic cleanerWashing After min, putting the cleaned glass substrate into an oven for T Drying Drying at a temperature of t Drying min, carrying out ultraviolet ozone treatment t on the dried glass substrate Ultraviolet ozone treatment And (5) min. 200. Mu.L of 15wt% aqueous dispersion of tin dioxide (SnO 2) was mixed with 1mL of ultrapure water, and the mixture was stirred sufficiently to obtain a tin oxide solution, and then V was taken Tin oxide mu.L of tin oxide solution was applied to 1X 1cm 2 Is arranged on the ITO glass substrate and then is arranged on T Annealing Annealing t on a heating table at DEG C Annealing And obtaining the tin dioxide electron transport layer after min.
And S2, preheating the perovskite precursor solution and the substrate prepared in the step S1. Weigh n Lead iodide mmol lead iodide (PbI) 2 ) And n Methyl iodinated amine mmol methyl iodinated amine (MAI) was dissolved in dimethyl sulfoxide (DMSO) and Dimethylformamide (DMF) at a volume ratio of 9:1 (total amount of mixed solvent is 1 mL), and then n is added Octyl amine chloride mmol of octylamine chloride (OACl), thoroughly stirred t Stirring h formation concentration of C Precursor solution mol/L perovskite precursor solution.
Treating the glass substrate with the electron transport layer deposited in step S1 with ultraviolet ozone for 15min, and placing the glass substrate containing electron transport layer at T Preheating substrate Preheating t on heating table at DEG C Preheating substrate min, and heating the perovskite precursor solution to T Precursor solution ℃。
And S3, spin-coating the preheated perovskite precursor solution on the preheated substrate to obtain a perovskite wet film, and radiating the perovskite wet film by near infrared light in the spin-coating process to obtain a perovskite film. Putting the preheated glass substrate into a KW-4A spin coater at a distance of 1X 1cm 2 Spin-coating V on surface of tin dioxide electron transport layer Precursor solution Mu L of the perovskite precursor solution is used for obtaining a perovskite wet film, and the spin coating speed is V Spin coating r/min, spin coating time t Spin coating s, t before the end of spin coating Near infrared light S near infrared light is used to obtain a distance from the perovskite wet film S Distance of radiation Radiation treatment t of perovskite wet film at cm Near infrared light s to obtain the perovskite thin film.
And S4, annealing the perovskite film obtained in the step S3. Placing the perovskite film obtained in the step S3 at T Heating film Heating t on a heating table at DEG C Heating film The length of the reaction vessel is 1X 1cm 2 Is a perovskite layer.
And step S5b, scraping carbon slurry on the perovskite layer obtained in the step S4, and annealing to obtain the carbon electrode. And (3) dipping a small amount of carbon slurry by using a glass slide, directly scraping and coating the surface of the perovskite layer obtained in the step (S4) to completely cover the whole surface of the perovskite layer, and annealing at 100 ℃ for 30min to obtain the carbon electrode.
The perovskite solar cell production of examples 7 to 12 was identical to the production procedure of the corresponding examples 1 to 6, and each experimental parameter in the production process of examples 1 to 12 is shown in table 1.
Table 1 experimental parameters for the preparation of perovskite solar cells in examples 1 to 12
Table 1 examples 1 to 12 experimental parameters (follow-up) for preparing perovskite solar cells
Comparative examples 1-3 perovskite solar cells were prepared with cell structures of a glass substrate, an electron transport layer, a perovskite layer, a hole transport layer and metallic electrode silver in this order, the glass substrate being indium tin oxide (ITO substrate).
Comparative examples 4-6 perovskite solar cells were prepared in which the cell structure was a glass substrate, an electron transport layer, a perovskite layer and a carbon electrode in this order, and the glass substrate was indium tin oxide (ITO substrate).
The preparation of comparative examples 1 to 6 corresponds to the preparation of examples 1 to 6, with the differences shown in Table 2 below, and the experimental parameters in the preparation are shown in Table 3.
Table 2 summary of the differences in the preparation of examples 1 to 6 and comparative examples 1 to 6
| Additives in perovskite precursor solutions | Method for removing organic solvent in spin coating process | |
| Examples 1 to 6 | Octyl amine chloride (OACl) | Near infrared method |
| Comparative example 1 | - | Near infrared method |
| Comparative example 2 | Octyl amine chloride (OACl) | Antisolvent process |
| Comparative example 3 | - | Antisolvent process |
| Comparative example 4 | - | Near infrared method |
| Comparative example 5 | Octyl amine chloride (OACl) | Antisolvent process |
| Comparative example 6 | - | Antisolvent process |
The antisolvent method in Table 2 is different from the near infrared method in that the preheated glass substrate in step S3 is put into KW-4A spin coater at 1X 1cm 2 Spin-coating V on surface of tin dioxide electron transport layer Precursor solution And (3) obtaining the spin coating process of the perovskite wet film by using the mu L of the perovskite precursor solution. The spin coating process for removing the organic solvent by the anti-solvent method is divided into two steps: first, spin-coating at a low speed of 1000r/min for 10s in the first step, spin-coating at a high speed of 4000r/min for 30s in the second step, spin-coating at a high speed of 1X 1cm within 6-7 s 2 And (3) dropwise adding 150 mu L of anti-solvent chlorobenzene on the electron transport layer to remove the organic solvent to obtain the perovskite film. At the position of
Table 3 comparative examples 1 to 6 experimental parameters for the preparation of perovskite solar cells
Performance effects examples
The perovskite solar cell devices produced in examples 1 to 6 were irradiated with a CME-Sol8040-3A solar simulator at a light intensity of one solar light intensity AM1.5G, and the device temperature was maintained at room temperature (25 ℃) during the test. The perovskite solar cell devices obtained in examples 1 to 6 and comparative examples 1 to 6 were subjected to short-circuit current density (J) during the test SC ) Open circuit voltage (V) OC ) The Fill Factor (FF) and Power Conversion Efficiency (PCE) are tested, and the test results are shown in table 4.
Table 4 results of performance test of perovskite solar cell devices produced in examples 1 to 6 and comparative examples 1 to 6
Comparison of the test data of example 1 and comparative example 1 (no addition of OACl), example 4 and comparative example 4 (no addition of OACl) in table 4 can be found: fill Factor (FF) and short circuit current density (J) of perovskite thin film SC ) The addition of the octylamine chloride (OACl) can effectively increase the grain size of the perovskite film and passivate defects of the perovskite film, so that the prepared perovskite film has better surface morphology and compactness.
From the comparison of the test data of example 2 and comparative example 2 (using the anti-solvent method), example 5 and comparative example 5 (using the anti-solvent method) in table 4, it can be found that: whether the silver electrode perovskite solar cell or the carbon electrode perovskite solar cell, compared with the perovskite solar cell prepared by removing the organic solvent by adopting an anti-solvent method, the perovskite solar cell prepared by adopting a near infrared methodPerovskite solar cells prepared by removing the organic solvent have higher short-circuit current density (J) SC ) And a Fill Factor (FF), in other words, the crystallinity of crystal grains in the perovskite thin film prepared by near infrared treatment is better, and the thin film quality is better.
Comparison of the test data of example 3 and comparative example 3 (no OACl added and anti-solvent method) and example 6 and comparative example 6 (no OACl added and anti-solvent method) in table 4 shows that: the perovskite solar cells prepared in example 3 and example 6 were used in combination by the near infrared method and the addition of OACl, regardless of the silver electrode perovskite solar cell or the carbon electrode perovskite solar cell, in the short-circuit current density (J SC ) Open circuit voltage (V) OC ) And the Filling Factor (FF) are improved remarkably, so that the Power Conversion Efficiency (PCE) is far greater than that of the perovskite solar cells prepared in comparative example 3 and comparative example 6. That is, the perovskite film prepared by combining the near infrared method and the octylamine chloride (OACl) method can be well improved, the surface of the prepared film is smoother and more compact, and the grain size in the film is larger and more uniform.
In an inert atmosphere (N) 2 ) In the above, the perovskite solar cell devices prepared in example 3 and comparative example 3 (without octylamine chloride (OACl) and by the antisolvent method) and example 6 and comparative example 6 (without octylamine chloride (OACl) and by the antisolvent method) were continuously irradiated with a CME-Sol8040-3A solar simulator under the condition that the light intensity was one solar light intensity am1.5g, and the Power Conversion Efficiency (PCE) attenuation of the devices was tested, and the test results are shown in table 5
Table 5 perovskite solar cell device performance decay test prepared in example 3 and comparative example 3, example 6 and comparative example 6
As can be seen from the above table 5, the perovskite solar cell device devices prepared in comparative example 3 and comparative example 6 were drastically reduced in device performance within the first 100 hours, and then stabilized and slightly reduced to 50 to 60% of the initial power conversion efficiency after 500 hours. In contrast, the perovskite solar cell devices prepared in example 3 and example 6 using the near infrared method and the addition of octylamine chloride (OACl) in combination, under the same environmental conditions, the Power Conversion Efficiency (PCE) after 100 hours can be maintained at 80% or more of the initial Power Conversion Efficiency (PCE) and still maintain 80% or more of the initial Power Conversion Efficiency (PCE) at 500 hours. In summary, when the perovskite thin film prepared by the method is used as a light absorption layer to be applied to a perovskite solar cell device, the stability and performance of the perovskite solar cell device are superior to those of the perovskite solar cell device prepared by the prior art.
While the invention has been described in detail with reference to the above embodiments, those skilled in the art will appreciate that many modifications of the invention are possible in light of the above teachings. Accordingly, certain details of the embodiments are not to be interpreted as limiting the invention, which is defined by the appended claims.
Claims (10)
1. A perovskite precursor solution comprising lead iodide, methyl iodinated amine and an organic solvent, characterized in that it further comprises octyl amine chloride.
2. The perovskite precursor solution of claim 1, wherein the concentration of lead iodide is 0.8 to 1.2mol/L; the concentration of the methyl iodized amine is 0.8-1.2 mol/L; the molar concentration of the octyl amine chloride is 1-5% of the molar concentration of the lead iodide;
the organic solvent is a mixed solution of dimethylformamide and dimethyl sulfoxide, and the volume ratio of the dimethylformamide to the dimethyl sulfoxide is 5:1 to 9:1.
3. a method for producing a perovskite thin film, characterized in that the method comprises the steps of:
s1, preparing an electron transport layer on a clean substrate;
s2, preheating the perovskite precursor solution according to claim 1 or 2 and the substrate prepared in the step S1;
s3, spin-coating the preheated perovskite precursor solution on the preheated substrate to obtain a perovskite wet film, and radiating the perovskite wet film by near infrared light in the spin-coating process to obtain a perovskite film.
4. The method of claim 3, wherein the method further comprises
And S4, annealing the perovskite film obtained in the step S3.
5. The method of claim 3, wherein,
the preheating in step S2 means: heating the substrate at 100-120 ℃ for 5-8 min, and heating the perovskite precursor solution to 50-70 ℃;
the spin coating in step S3 means: spin-coating 30-50 mu L of the perovskite precursor solution on 1X 1cm 2 Spin coating speed is 3000 r/min-4000 r/min, spin coating time is 25-30 s; the irradiation means that near infrared light is used for irradiating the perovskite wet film at a position 20 cm-30 cm away from the perovskite wet film when the spin coating is finished for 15-25 s, the irradiation time is 15-25 s, and the irradiation intensity is 5-7W/sr.
6. The method of claim 3, wherein,
the step S1 is that the cleaned substrate is sequentially ultrasonically cleaned for 15-20 min by 100-130 mL of ethanol, a detergent, deionized water and ethanol; drying at 50-70 deg.c for 5-10 min, and then ultraviolet ozone treatment for 15-20 min with the ultraviolet ozone light intensity of 28-32 mW/cm;
the preparation of the electron transport layer in step S1 means: taking 15-17 wt% of water dispersion of tin dioxide and ultrapure water according to the volume ratio of 1:5, mixing to obtain tin oxide solution, and then coating 50-60 mu L of the tin oxide solution on 1X 1cm 2 Is annealed at 140-150 ℃ for 2And obtaining the tin dioxide electron transport layer after 5-30 min.
7. A method according to claim 3, wherein the perovskite precursor solution of step S2 is: dissolving 0.8-1.2 mmol of lead iodide and 0.8-1.2 mmol of methyl iodized amine in 1mL of organic solvent, and then adding octyl amine chloride and fully stirring for 5-8 h to obtain perovskite precursor solution; wherein the molar amount of the octyl amine chloride is 1-5% of the molar amount of the lead iodide;
the organic solvent is a mixed solution of dimethylformamide and dimethyl sulfoxide, and the molar ratio of the dimethylformamide to the dimethyl sulfoxide is 5:1 to 9:1.
8. the method of claim 4, wherein,
the annealing in step S4 means: and (3) heating the perovskite film obtained in the step (S3) at 100-120 ℃ for 5-10 min.
9. Use of the perovskite thin film of claim 3 as a light absorbing layer of a perovskite solar cell.
10. The use according to claim 9, wherein the light absorbing layer of the perovskite solar cell is a perovskite layer;
the perovskite solar cell comprises the following structures in sequence: the device comprises a glass substrate, an electron transport layer, a perovskite layer, a hole transport layer and a metal electrode;
or (b)
The perovskite solar cell comprises the following structures in sequence: the electron transport layer is arranged on the perovskite layer.
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