CN114141954A

CN114141954A - Perovskite thin film with tin dioxide as substrate and polymer interface modification, preparation method thereof and solar cell

Info

Publication number: CN114141954A
Application number: CN202111191567.8A
Authority: CN
Inventors: 竺晨璞; 钟敏; 周瑾璟
Original assignee: China Jiliang University
Current assignee: China Jiliang University
Priority date: 2021-10-13
Filing date: 2021-10-13
Publication date: 2022-03-04

Abstract

The invention discloses a method for preparing SnO₂CH for interfacial modification of base polymers₃NH₃PbI₃The perovskite thin film is SnO with polyvinyl butyral modified into a planar structure, and a preparation method thereof and a solar cell₂A substrate; then SnO modified by polymer polyvinyl butyral₂Preparation of CH on substrate₃NH₃PbI₃A film. SnO modified by polyvinyl butyral₂/CH₃NH₃PbI₃Interface, decrease CH₃NH₃PbI₃Volatilization of organic cations during preparation and deactivation of low-coordinated Pb²⁺Decrease CH₃NH₃PbI₃Defects in perovskite thin films. And the polyvinyl butyral is coated on SnO in a spinning way₂On a substrate, making CH₃NH₃PbI₃The perovskite thin film can properly release the stress of the thin film in the growth stage, and the thin film with better quality is obtained. The thin film is applied to the solar cell, so that the efficiency and the stability of the device can be effectively improved, and the commercialization process of the device is promoted.

Description

Perovskite thin film with tin dioxide as substrate and polymer interface modification, preparation method thereof and solar cell

Technical Field

The invention belongs to the technical field of solar cell preparation, and relates to a composite material prepared from SnO₂The perovskite thin film is a substrate polymer interface modified perovskite thin film and a solar cell, in particular relates to a preparation method of a polymer interface modified perovskite light absorption layer, and particularly relates to interface engineering of an electron transmission layer/light absorption layer of a perovskite solar cell.

Background

Among the renewable energy sources, solar energy is a good choice. As is well known, solar energy has the characteristics of inexhaustibility, no need of transportation and low risk, and has great potential in solving the problems of energy crisis and environmental pollution faced by human beings. Solar cells can effectively convert solar energy into electric energy, and are one of new energy technologies which are currently concerned. In the course of recent developments, three generations of solar cells have emerged, respectively silicon-based solar cells, thin-film solar cells and emerging solar cells. The perovskite solar cell is one of emerging solar cells, and has the advantages of high photoelectric conversion efficiency, low cost, simple manufacturing process, long charge diffusion length and the like. To date, the highest energy conversion efficiency of perovskite solar cells has reached 25.5%, and the rapid development speed thereof has received a high degree of attention. CH (CH)₃NH₃PbI₃Perovskite solar cell with CH₃NH₃PbI₃As a material for the light absorbing layer, the band gap thereof was about 1.4 eV. CH (CH)₃NH₃PbI₃The material has the following excellent properties: broadband absorption, low exciton confinement energy, high carrier mobility (25 cm)²Vs), long carrier lifetime and carrier diffusion length, are among the most suitable materials for the light absorbing layer of perovskite solar cells. But CH₃NH₃PbI₃The following problems are present in the preparation of the film: phi CH₃NH₃PbI₃Organic cations and iodide ions on the surface of the film can volatilize in the annealing process, so that low-coordination Pb appears on the surface of the film²⁺. Low coordinated Pb on film surface²⁺Is a deep level defect. Deep level defects can trap carriers at the heterojunction interface. The accumulation of the carriers bound by the defects at the interface can cause the problems of energy band bending, energy level arrangement change, built-in electric field change, interface non-radiative recombination and the like, and is not beneficial to the separation and injection of the carriers in the carrier transmission process and finally destroys the photoelectric conversion efficiency and stability. ② CH₃NH₃PbI₃The film has poor film forming quality, low coverage rate and low crystallinity.

Disclosure of Invention

The invention aims to provide a method for preparing SnO₂The invention discloses a perovskite thin film modified by a substrate polymer interface, a preparation method thereof and a solar cell, which can improve the quality of the perovskite thin film and the performance of the perovskite solar cell₂The perovskite thin film prepared by the method is applied to a solar cell, so that the efficiency and the stability of a device can be effectively improved, and the commercialization process of the device is promoted.

The technical scheme of the invention is as follows:

SnO₂CH for interfacial modification of base polymers₃NH₃PbI₃The perovskite film is prepared through preparing SnO with conductive glass as substrate₂Thin film, then on conductive glass/SnO₂Modifying polyvinyl butyral polymer on substrate, and preparing CH on it₃NH₃PbI₃Perovskite thin film and applying the resultant to solar cell, a typical preparation method of the thin film may include the following steps, wherein the parameters are preferred values:

(1) conducting ultrasonic treatment on the conductive glass by acetone, absolute ethyl alcohol and deionized water for 20min, then blow-drying by nitrogen, and then carrying out ultraviolet ozone treatment in a UV irradiation machine for 30 min. SnO with the volume of 100-200 mu L and the mass percent concentration of 1-5 wt%₂Spin-coating the colloid dispersion liquid on the conductive glass treated by ultraviolet ozone, spin-coating for 10-60 s at the rotating speed of 2500-5000 r/min, repeating the process for 3-6 times, and annealing at 100-200 ℃ for 15-60 min to obtain the productSnO with conductive glass as substrate₂A film.

(2) Adding the solid polyvinyl butyral into an isopropanol solvent, heating at 80-100 ℃, and magnetically stirring for 20-40 min until the solid polyvinyl butyral is completely dissolved. Coating 100-200 mul of polyvinyl butyral solution with mass concentration of 0.5-2 mg/ml on a substrate SnO in a spinning way₂The spin coating speed is 2000-4000 r/min, and the spin coating time is 20-40 s. Then annealing for 1-10 min at 70-90 ℃ on a constant temperature heating table to obtain conductive glass/SnO₂A PVB film.

(3) Weighed appropriate amount of PbI₂Dissolving the mixture in dimethyl sulfoxide and N, N-dimethylformamide according to a volume ratio of 1: 8-1: 11, heating and stirring the mixture for 15 to 45min at the temperature of between 60 and 90 ℃ by using a constant-temperature heating magnetic stirrer until the mixture is dissolved to obtain PbI with the molar concentration of between 0.5 and 1.5mol/L₂And (3) precursor solution. The solution was then filtered through a teflon filter head. Taking 130-170 mu l PbI₂Spin coating the solution to the conductive glass/SnO prepared in the step (2) treated by ultraviolet ozone₂The spin coating speed is 2000-4000 r/min and the spin coating time is 30-60 s on the PVB film. Then annealing at 60-90 ℃ for 20-60 min. Weighing a proper amount of methyl ammonium iodide, dissolving the methyl ammonium iodide in an isopropanol solution, and magnetically stirring the mixture for 20-60 min at the temperature of 20-40 ℃ to obtain a methyl ammonium iodide solution with the mass concentration of 5-10 mg/mL. Spin coating PbI₂The device is immersed in methyl ammonium iodide solution for reaction for 1-3 min, taken out and cleaned by isopropanol for 40-60 s, and taken out and dried by spin-drying redundant liquid. Annealing at 70-100 ℃ for 1-10 min to obtain conductive glass/SnO₂/PVB/CH₃NH₃PbI₃A film.

After the thin film is prepared, the thin film can be applied to a perovskite solar cell, namely the following steps can be continued after the steps:

(4) transferring 60 mu L of Spiro-OMeTAD cobalt-based spin-coating liquid drop to the conductive glass/SnO prepared in the step (3) adsorbed on the vacuum chuck by using a liquid transfer gun₂/PVB/CH₃NH₃PbI₃Spin coating on the thin film substrate at 3000r/min for 30s to obtain conductive glass/SnO₂/PVB/CH₃NH₃PbI₃The film is a cobalt-doped Spiro-OMeTAD hole transport layer of the substrate.

(5) Under high vacuum (5X 10)^-5Pa), in conductive glass/SnO₂/PVB/CH₃NH₃PbI₃A layer of gold (Au) with the thickness of 80nm is thermally evaporated on a/Spiro-OMeTAD substrate to be used as a cathode, and the obtained structure is conductive glass/SnO₂/PVB/CH₃NH₃PbI₃Perovskite solar cell of/Spiro-OMeTAD/Au.

The polymer polyvinyl butyral (PVB) is a lewis base molecule. Low coordinated Pb²⁺Can be considered a lewis acid and can be effectively deactivated by lewis base molecules containing a lone pair of electrons N, O, S. Thus the introduction of polymeric polyvinyl butyral can lead to under-coordinated Pb²⁺And a pair of non-bonding electrons is provided to form a Lewis acid-base adduct, so that defects are passivated, interface non-radiative recombination loss is reduced, and energy conversion efficiency is improved. Because the glass transition temperature of the polyvinyl butyral is low (66-84 ℃), and the annealing temperature for perovskite layer preparation is often higher than this temperature, the polyvinyl butyral layer still maintains a soft, glassy state during the perovskite layer preparation process. This enables the perovskite to properly relax the film stress during the growth phase, resulting in a better quality film.

The invention applies the polyvinyl butyral on SnO₂/CH₃NH₃PbI₃And (6) an interface. Incorporation of the polymeric polyvinyl butyral can reduce CH₃NH₃PbI₃And the polyvinyl butyral can donate under-coordinated Pb²⁺A pair of non-bonding electrons is provided to form a lewis acid-base adduct, thereby inactivating the defect. The film stress can be properly released in the perovskite growth stage by utilizing the low glass transition temperature of the polyvinyl butyral, so that a film with better quality is obtained. The research result shows that SnO is reacted by polyvinyl butyral₂/CH₃NH₃PbI₃Modification of interface to improve CH₃NH₃PbI₃The shape, structure, optical properties, stability of the film and the properties of the corresponding solar cell.

Drawings

FIG. 1 is CH₃NH₃PbI₃Scanning electron microscopy of field emission of perovskite (abbreviated as PVK in the figure) thin film: (a) the polyvinyl butyral is unmodified; (b) polyvinyl butyral (PVB).

FIG. 2 is CH without PVB modification and with PVB modification₃NH₃PbI₃XRD diffractogram of Perovskite (PVK) thin film.

FIG. 3 is CH without PVB modification and with PVB modification₃NH₃PbI₃Ultraviolet-visible absorption spectrum of Perovskite (PVK) thin films.

FIG. 4 is CH without PVB modification and with PVB modification₃NH₃PbI₃The Perovskite (PVK) film is stored in the air for 0-20 h respectively, and the optical performance is stable.

FIG. 5 is CH without and with PVB interfacial modification₃NH₃PbI₃J-V characteristic curve of Perovskite (PVK) solar cell.

Detailed Description

The present invention will be described in detail with reference to the following examples.

Example 1

(1) And (3) ultrasonically treating the FTO conductive glass with acetone, absolute ethyl alcohol and deionized water for 20min, then blow-drying with nitrogen, and then carrying out ultraviolet ozone treatment in a UV irradiation machine for 30 min. SnO with the volume of 100 mu L and the mass percent concentration of 1wt percent₂Spin coating the colloidal dispersion on FTO conductive glass treated by ultraviolet ozone, spin coating at 2500r/min for 20s, repeating the process for 3 times, and annealing at 100 deg.C for 25min to obtain SnO with FTO conductive glass as substrate₂A film.

(2) Adding the solid polyvinyl butyral into isopropanol solvent, heating at 80 deg.C, and magnetically stirring for 20min until completely dissolved. Coating the polyvinyl butyral solution with the volume of 100 mul and the mass concentration of 0.5mg/ml on a substrate SnO in a spinning way₂The spin coating speed was 2500r/min, and the spin coating time was 30 s. Then annealing for 10min at 70 ℃ on a constant temperature heating table to obtain FTO/SnO₂A PVB film.

(3) Weighed appropriate amount of PbI₂Dissolving in a solvent with the volume ratio of 1: 9 in a mixed solvent of dimethyl sulfoxide and N, N-dimethylformamide, heating and stirring for 25min at 70 ℃ by using a constant-temperature heating magnetic stirrer until the mixture is dissolved to obtain PbI with the molar concentration of 0.5mol/L₂And (3) precursor solution. The solution was then filtered through a teflon filter head. Taking PbI with volume of 140 μ l₂Spin coating the solution to the FTO/SnO prepared in the step (2) treated by ultraviolet ozone₂The spin coating speed on the PVB film is 2500r/min, and the spin coating time is 40 s. Then annealed at 70 ℃ for 30 min. An appropriate amount of methyl ammonium iodide is weighed and dissolved in the isopropanol solution, and the mixture is magnetically stirred for 25min at 25 ℃ to obtain a methyl ammonium iodide solution with the mass concentration of 6 mg/mL. Spin coating PbI₂The device is immersed in methyl ammonium iodide solution for reaction for 2min, taken out and cleaned by isopropanol for 40s, and the redundant liquid is dried. Annealing at 85 deg.C for 5min to obtain FTO/SnO₂/PVB/CH₃NH₃PbI₃A film.

(4) Transferring 60 mu L of Spiro-OMeTAD cobalt-based spin-coating liquid drop to the FTO/SnO prepared in the step (3) adsorbed on the vacuum chuck by using a liquid transfer gun₂/PVB/CH₃NH₃PbI₃Spin coating on the thin film substrate at 3000r/min for 30s to obtain FTO/SnO₂/PVB/CH₃NH₃PbI₃The film is a cobalt-doped Spiro-OMeTAD hole transport layer of the substrate.

(5) Under high vacuum (5X 10)^-5Pa) in FTO/SnO₂/PVB/CH₃NH₃PbI₃A layer of gold (Au) with the thickness of 80nm is thermally evaporated on a/Spiro-OMeTAD substrate to be used as a cathode, and the structure obtained is FTO/SnO₂/PVB/CH₃NH₃PbI₃Perovskite solar cell of/Spiro-OMeTAD/Au.

In the embodiment, the polyvinyl butyral has 15.0-18.0mPa.s, butyraldehyde groups of 70% -75%, and PVB with other specifications is also feasible; the specification of the FTO conductive glass is 20mm × 25mm, the square resistance is 14 omega, the light transmittance is more than or equal to 90%, and other types of conductive glass are also feasible.

The invention is described in detail below with reference to the accompanying drawings:

FIG. 1 shows CH without polyvinyl butyral modification₃NH₃PbI₃Perovskite thin film and polyvinyl butyral modified CH₃NH₃PbI₃SEM image of perovskite thin film. As can be seen from the figure, the unmodified CH₃NH₃PbI₃The perovskite thin film has more gaps on the surface, smaller and uneven grain size and poorer crystallinity. The perovskite film taking the polyvinyl butyral as the substrate obviously reduces the surface gap of the film, obviously increases the crystal grains of the perovskite film, and is more compact, flat and uniform, and the crystallinity is obviously improved. Such high quality, high flatness films facilitate the transport of charge carriers between the grains and the grain and perovskite layer and interface. These changes are effective in improving the photovoltaic properties of the perovskite.

FIG. 2 shows CH without polyvinyl butyral modification₃NH₃PbI₃Perovskite thin film and polyvinyl butyral modified CH₃NH₃PbI₃XRD pattern of perovskite thin film. The results show that polyvinyl butyral, after modification, corresponds to CH₃NH₃PbI₃The XRD diffraction peak intensity of the perovskite is improved. The result shows that after the polyvinyl butyral is modified, the crystallinity of the perovskite film is improved, which is beneficial to improving the photoelectric property of the perovskite film.

FIG. 3 shows CH without polyvinyl butyral modification₃NH₃PbI₃Perovskite thin film and polyvinyl butyral modified CH₃NH₃PbI₃Ultraviolet and visible light absorption spectrum of perovskite thin film. The results show that polyvinyl butyral modification can increase CH₃NH₃PbI₃The perovskite film absorbs in the wavelength range of 500nm-900nm and has red shift of absorption edge to improve CH₃NH₃PbI₃Light absorption properties of perovskite thin films.

FIG. 4 is a UV-VIS absorption spectrum diagram obtained by performing UV-VIS absorption spectrum test on a perovskite film without being modified by polyvinyl butyral and a perovskite film modified by polyvinyl butyral immediately after the perovskite film and the polyvinyl butyral are prepared and exposed in the air for 20 hours and then performing the UV-VIS absorption spectrum test again. As can be seen from FIG. 4, the absorbance of the perovskite thin film modified with polyvinyl butyral in the wavelength range of 500nm to 900nm was higher than that of the perovskite thin film control group without polyvinyl butyral modification. After the perovskite thin film modified by the polyvinyl butyral is exposed in the air for 20 hours, the absorbance of the perovskite thin film modified by the polyvinyl butyral is not changed greatly in the wavelength range of 500nm-900nm, and the absorbance of the control group in the wavelength range of 500nm-900nm is obviously reduced after the perovskite thin film is exposed in the air for 20 hours. As can be seen from FIG. 4, the modification of the polyvinyl butyral can inhibit the decomposition of the perovskite thin film in the air, and the modification of the polyvinyl butyral enables the perovskite thin film to have better stability.

FIG. 5 is a graph of J-V characteristics of polyvinyl butyral modified and unmodified perovskite solar cells. Table 1 is a table of photovoltaic parameters of the perovskite solar cell associated with fig. 5. As can be seen from fig. 5, the perovskite solar cell using the polyvinyl butyral modified light absorption layer/electron transport layer has a certain improvement in various photovoltaic parameters. The photoelectric conversion efficiency of the perovskite solar cell modified by polyvinyl butyral reaches 10.12%, the open-circuit voltage reaches 1.08V, and the short-circuit current reaches 14.80 mA-cm^-2Fill factor was 0.64 compared to CH without polyvinyl butyral modification₃NH₃PbI₃The efficiency of the perovskite solar cell is improved by 1.02 percent and relatively improved by 11.21 percent.

TABLE 1 perovskite solar cell photovoltaic parameters

SnO modified by polyvinyl butyral₂/CH₃NH₃PbI₃The interface prepares a perovskite film and reduces CH₃NH₃PbI₃Volatilization of organic cations in the film during annealing and passivation of low-coordinated Pb²⁺Decrease CH₃NH₃PbI₃Defects in perovskite thin films. And the polyvinyl butyral is coated on SnO in a spinning way₂On a substrate, CH₃NH₃PbI₃The perovskite film can properly release film stress in the growth stage, and a film with better quality is obtained, so that the performance of a device is improved.

Example 2

(1) And (3) ultrasonically treating the FTO conductive glass with acetone, absolute ethyl alcohol and deionized water for 20min, then blow-drying with nitrogen, and then carrying out ultraviolet ozone treatment in a UV irradiation machine for 30 min. SnO with the volume of 200 mu L and the mass percent concentration of 5wt percent₂Spin coating the colloidal dispersion solution on FTO conductive glass treated by ultraviolet ozone, spin coating for 30s at the rotating speed of 4000r/min, repeating the process for 6 times, and annealing at 180 ℃ for 40min to obtain SnO with the FTO conductive glass as a substrate₂A film.

(2) Adding the solid polyvinyl butyral into isopropanol solvent, heating at 90 deg.C, and magnetically stirring for 30min until completely dissolved. Coating the polyvinyl butyral solution with the volume of 180 mul and the mass concentration of 1.5mg/ml on a substrate SnO in a spinning way₂The spin coating speed was 3500r/min, and the spin coating time was 20 seconds. Then annealing at 90 deg.C for 5min on a constant temperature heating table to obtain FTO/SnO₂A PVB film.

(3) Weighed appropriate amount of PbI₂Dissolving in a solvent with the volume ratio of 1: 10 in a mixed solvent of dimethyl sulfoxide and N, N-dimethylformamide, heating and stirring for 20min at 80 ℃ by using a constant-temperature heating magnetic stirrer until the mixture is dissolved to obtain PbI with the molar concentration of 1mol/L₂And (3) precursor solution. The solution was then filtered through a teflon filter head. Take a PbI volume of 160. mu.l₂Spin coating the solution to the FTO/SnO prepared in the step (2) treated by ultraviolet ozone₂The spin coating speed is 4000r/min and the spin coating time is 30s on the PVB film. Then annealed at 80 ℃ for 20 min. Weighing a proper amount of methyl ammonium iodide, dissolving the methyl ammonium iodide in an isopropanol solution, and magnetically stirring the mixture for 20min at the temperature of 30 ℃ to obtain a methyl ammonium iodide solution with the mass concentration of 5-10 mg/mL. Spin coating PbI₂The device is immersed in methyl ammonium iodide solution for reaction for 1-3 min, taken out and cleaned by isopropanol for 40-60 s, and taken out and dried by spin-drying redundant liquid. Annealing at 70-100 ℃ for 1-10 min to obtain FTO/SnO₂/PVB/CH₃NH₃PbI₃A film.

Claims

1. SnO₂The perovskite thin film for the interface modification of the substrate polymer is characterized in that the thin film is SnO with a plane structure₂The layer structure is a substrate on which a layer of polyvinyl butyral (PVB) is prepared and on which CH is prepared₃NH₃PbI₃The resulting structure of the film.

2. A SnO according to claim 1₂The perovskite thin film for modifying the substrate polymer interface is characterized by being prepared by the following method:

(1) conducting ultrasonic treatment on the conductive glass by acetone, absolute ethyl alcohol and deionized water respectively, then blowing dry by nitrogen, then carrying out ultraviolet ozone treatment, and then carrying out SnO₂Spin coating the colloidal dispersion liquid on the treated conductive glass, repeating for several times, and annealing to obtain SnO with conductive glass as substrate₂A film;

(2) taking the sample prepared in the step (1) as a substrate, adding PVB solid into an isopropanol solvent, heating and stirring until the PVB solid is completely dissolved to obtain a PVB solution, spin-coating the PVB solution on the substrate, and annealing to obtain conductive glass/SnO₂A PVB film;

(3) is prepared by the step (2)The obtained sample is used as a substrate, and CH is prepared on the sample by adopting a two-step method₃NH₃PbI₃Film obtained in SnO₂Perovskite thin film conductive glass/SnO for substrate polymer interface modification₂/PVB/CH₃NH₃PbI₃。

3. A SnO according to claim 2₂The perovskite thin film for modifying the substrate polymer interface is characterized in that SnO in the step (1)₂The mass percentage concentration of the colloidal dispersion liquid is 1 wt% -5 wt%, the spin-coating speed is 2500-5000 r/min, the spin-coating time is 10 s-60 s, the process is repeated for 3-6 times, the annealing temperature is 100-200 ℃, and the annealing time is 15-60 min.

4. A SnO according to claim 2₂The perovskite thin film modified by the substrate polymer interface is characterized in that the heating temperature of the heating and stirring in the step (2) is 80-100 ℃, the stirring time is 20-40 min, and the mass concentration of the PVB solution is 0.5-2 mg/ml.

5. A SnO according to claim 2₂The perovskite thin film modified by the substrate polymer interface is characterized in that in the step (2), the PVB solution spin-coating speed is 2000-4000 rpm, the spin-coating time is 20-40 s, the annealing temperature is 70-90 ℃, and the annealing time is 1-10 min.

6. A SnO according to claim 2₂The perovskite thin film for modifying the substrate polymer interface is characterized in that the step (3) specifically comprises the following steps:

1) will PbI₂Dissolving in the mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide, heating and stirring until the mixture is completely dissolved to obtain PbI₂Filtering the precursor solution, and spin-coating the solution on the conductive glass/SnO treated by ultraviolet ozone₂Immersing the surface of a PVB film in isopropanol for 1-10 min, taking out, drying the film to obtain excessive liquid, and annealing;

2) dissolving methyl ammonium iodide in isopropanol solution, stirring at room temperature to obtain a methyl ammonium iodide solution with the mass concentration of 5-10 mg/mL, immersing the film obtained in the step 1) in the methyl ammonium iodide solution for reaction for 1-3 min, taking out, drying excessive liquid, and annealing to obtain the conductive glass/SnO₂/PVB/CH₃NH₃PbI₃A film.

7. A SnO according to claim 6₂The perovskite thin film modified by the substrate polymer interface is characterized in that the heating and stirring in the step 1) are carried out at the heating temperature of 60-90 ℃ for 15-45 min; the PbI₂The concentration of the precursor solution is 0.5-1.5 mol/L, and the volume ratio of dimethyl sulfoxide to N, N-dimethylformamide is 1: 8-1: 11; the spin coating speed is 2000-4000 r/min, and the spin coating time is 30-60 s.

8. A SnO according to claim 6₂The perovskite thin film modified by the substrate polymer interface is characterized in that the annealing temperature in the step 1) is 60-90 ℃, and the annealing time is 20-60 min.

9. A SnO according to claim 6₂The perovskite thin film modified by the substrate polymer interface is characterized in that the annealing temperature in the step 2) is 70-100 ℃, and the annealing time is 1-10 min.

10. CH (physical channel)₃NH₃PbI₃Perovskite solar cell, characterized in that, based on the realization of the thin film according to any of claims 1-9, a hole transport layer is prepared on the thin film by spinning, and then electrodes are prepared, thus obtaining the perovskite solar cell device.