CN116046178A - Wavefront detection method for mid-far infrared band - Google Patents
Wavefront detection method for mid-far infrared band Download PDFInfo
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Abstract
The invention provides a wavefront detection method for a mid-far infrared band. According to the method, the middle-far infrared laser is irradiated to a specific fluorescent material to excite fluorescence, so that the characteristic of the fluorescent material is utilized to perform frequency conversion on incident light, an incident long-wavelength light signal is converted into a short-wavelength light signal, the converted short-wavelength wavefront information is measured by a common CMOS detector, and the long-wavelength wavefront information of a middle-far infrared band can be obtained through the direct correlation between the wavefront information before conversion and the wavefront information after conversion, namely, the long-wavelength band wavefront information can be detected by the common CMOS detector without the need of the specific infrared band detector. The invention relates to a method for detecting mid-far infrared wave front by using a common shack Hartmann wave front detector. Compared with a wavefront sensor special for a long wave band, the wavefront sensor can directly detect long wave length wavefront information by only adding fluorescent materials on a transmission light path.
Description
Technical Field
The invention relates to the technical field of wavefront detection, in particular to a wavefront detection method for a middle-far infrared band, which can detect infrared band wavefront information by using a common visible light band wavefront detector.
Background
In recent years, adaptive optics technology is continuously developed and changed, and hot flashes applying adaptive optics are formed in astronomical world. An important part of adaptive optics is the detection of wavefront information. The development of random technology is not limited to visible light wave band, and the detection technology of infrared light wave band is also developed to a certain extent. However, the wavefront sensing technology for the infrared band has only been developed in a small part, and InGaAs cameras can be used for detection in the Near Infrared (NIR) band. However, inGaAs cameras on the market are generally relatively expensive and the detection range of such cameras covers only a small part of the near infrared spectrum. Another solution is to use a Mercury Cadmium Telluride (MCT) camera as the detector, but this solution requires custom cameras, is also relatively expensive, is not yet widely used at present, and has a low resolution for both detection means relative to the visible band detector. Based on the above, the invention provides the method for converting the infrared wave band wave-front information into the visible light wave band by utilizing the multiphoton absorption effect of the fluorescent material, so that the middle and far infrared wave band wave-front information can be detected by using a common CMOS camera.
From the above, for the detection of wavefront information in the infrared band, there is still a lack of an accurate and affordable detection means in the world. The present invention addresses this problem by providing a method for converting long wavelength information into short wavelength information by frequency up-converting infrared band wavefront information using multiphoton absorption effects in organic molecules. The detection of infrared band information by using a common wavefront detector can be realized. The invention relates to a method which can expand the detection spectrum and reduce the detection cost.
Disclosure of Invention
The invention aims to solve the technical problems that: the current wavefront detection means is limited by the response wavelength range of the detector, and for the optical information of the visible light band, the common CMOS detector can accurately detect, but for the wavefront information of the infrared band, detection is difficult, and in the Near Infrared (NIR) band, a common scheme is that a camera which is specially responsive to the optical information of the near infrared band is used for detection, such as an InGaAs camera and a Mercury Cadmium Telluride (MCT) camera. However, these two cameras are expensive, and the detection range covers only a small portion of the near infrared band, which is not cost effective and not widely used. It is a technical difficulty how to detect wavefront information in the infrared band with both practicality and accuracy.
The technical scheme adopted for solving the technical problems is as follows: the wavefront information of the middle infrared laser is converted in frequency by utilizing the characteristics of part of organic materials, the wavefront information of the detection infrared wave band is converted into the wavefront information of the detection visible wave band, and the accurate detection of the wavefront information of the infrared wave band can be realized.
The specific technical scheme is as follows:
a wavefront sensing method for mid-far infrared bands, the method comprising the steps of:
step (1), generating long-wavelength light beams by a laser, and dividing and converging the light beams into a plurality of laser light beams by a micro lens array; the light beam irradiates the surface of the fluorescent material; the fluorescent material is irradiated by high-power laser to generate nonlinear optical effect, multiphoton absorption phenomenon occurs, self-emitting visible light wave band fluorescence is generated, and the light beam finishes conversion on frequency; after the light beams are split and converged by the micro lens array, a light spot array image is excited on the surface of the fluorescent material, and the split sub-apertures meet the requirement that the number of pixels in a single sub-aperture is even;
step (2), fluorescence is detected by a CMOS detector, and short-wavelength wavefront information is obtained through a direct slope method or a mode method; the light spot array diagram corresponds to the resolution of the CMOS detector;
and (3) obtaining wavefront related information related to the long wavelength and the short wavelength according to the excited light spot array diagram and the segmented sub-aperture, converting the wavefront related information according to frequency, and recovering by a mode method to obtain long wavelength wavefront information.
The wavefront detection method breaks through the spectral range which can be detected by a common wavefront detector, expands the detection range to a middle-far infrared light band, and only uses a common CMOS detector to excite visible light band fluorescence by using the multi-photon absorption effect of fluorescence so as to convert the middle-far infrared laser into a detection visible light band light signal.
Further, the fluorescent material in the step (1) may be in any shape or any state; the cross-sectional size of the fluorescent material is larger than the micro-lens array size, and the fluorescent material is placed in front of the detector.
Further, the arbitrary shape includes a circle, a square; the arbitrary state includes solid state and liquid state.
Further, the method for converting the wavefront related information in the step (3) is to fit by using a mode method to obtain a functional relation between the wavefront before and after conversion, so that long wavelength wavefront information can be obtained through short wavelength wavefront information.
Further, the number of pixels in the single sub-aperture is 32x32; the wavefront related information is the centroid position of each sub-aperture spot.
The principle of the invention is as follows: the multiphoton absorption effect of the organic material may cause the incident light to undergo frequency up-conversion, thereby stimulated emission of short wavelength fluorescence. The invention provides a method for generating short-wavelength fluorescence by multiphoton absorption of a fluorescent material based on the principle, which converts the wave front detection problem aiming at an infrared wave band into the wave front detection problem of a visible light wave band.
Compared with the prior art, the invention excites fluorescence by irradiating the middle-far infrared laser on the specific fluorescent material, thereby utilizing the characteristic of the fluorescent material to convert the incident light into the frequency, converting the incident long-wavelength light signal into the short-wavelength light signal, utilizing the common CMOS detector to measure the converted short-wavelength wave-front information, and obtaining the long-wavelength wave-front information of the middle-far infrared wave band through the direct correlation between the wave-front information before conversion and the wave-front information after conversion. The invention realizes the detection of infrared band information by using the common wavefront detector. The invention relates to a method which can expand the detection spectrum and reduce the detection cost.
Drawings
FIG. 1 is a schematic diagram of a wavefront transmission optical path structure according to the present invention;
FIG. 2 is a schematic diagram of a correlation of wavefront phase information according to the present invention;
fig. 3 is a schematic diagram of array spots before and after conversion according to the present invention.
Detailed Description
As shown in fig. 1, the specific implementation steps of the wavefront detection method for the mid-far infrared band of the present invention are as follows:
step (1), generating long-wavelength light beams by a laser, and dividing and converging the light beams into a plurality of laser light beams by a micro lens array; a plurality of laser beams irradiate the surface of the fluorescent material; the fluorescent material is irradiated by high-power laser to generate nonlinear optical effect, multiphoton absorption phenomenon occurs, self-emitting visible light wave band fluorescence is generated, and the light beam finishes conversion on frequency; after the light beams are split and converged by the micro lens array, a light spot array image is excited on the surface of the fluorescent material, and the split sub-apertures meet the requirement that the number of pixels in a single sub-aperture is even;
the fluorescent material may take any shape, such as circular, square, etc. Any state may be used, such as solid, liquid, etc. The fluorescent material has a cross-sectional size greater than the size of the microlens array.
Step (2), fluorescence is detected by a CMOS detector, and short-wavelength wavefront information is obtained through a direct slope method or a mode method; the light spot array diagram corresponds to the resolution of the CMOS detector;
as shown in fig. 3, the centroid position of each sub-aperture light spot is obtained through the light spot array diagram obtained by detection, so as to obtain the wavefront information. If the intensity distribution of the sub-region on the photoelectric detector corresponding to the ith sub-aperture in the photoelectric detector is I i (x, y), then the i-th sub-aperture corresponds to the far-field spot centroid coordinates as:
in the above formula, lambda is the wavelength of the light beam to be detected, f is the focal length of the micro lens, S is the sub-aperture area, X l 、Y l Is the coordinates of the first pixel, (X c (i)，Y c (i) The centroid coordinates of the light spot corresponding to the ith sub-aperture. I.e., the wavefront slope in both the x and y directions (G x (i)，G y (i) A) can be expressed as:
taking the mode method as an example, assuming that the wavefront phase distribution of the beam to be measured is phi (x, y), the first n-order Zernike mode is used to spread the wavefront phase distribution:
wherein a is k For the kth order Zernike mode Z k The essence of the restored wavefront of the mode method is that the mode coefficient of the wavefront at the position is calculated by a measured mathematical relationship between the average slope of the sub-aperture wavefront and the mode coefficient, so as to obtain the wavefront to be measured. The average slope of the ith sub-aperture in the Hartmann sensor is related to the Zernike mode coefficient as follows:
wherein G is x (i)，G y (i) Representing the average slope, Z, of the ith sub-aperture wavefront in the x, y directions, respectively xk (i)，Z yk (i) Representing the average slope of the kth order Zernike modes at the ith sub-aperture, respectively, if the hartmann sensor has m active sub-apertures in total, mode recovery can be expressed as:
the above can be abbreviated as:
G＝Z·a
wherein G represents a wavefront slope vector calculated by a spot centroid offset, Z is a reconstruction matrix for realizing mode reconstruction, and can be obtained by integrating first-order partial derivative partial areas of a Zernike polynomial according to the spatial arrangement of sub-apertures of a Hartmann sensor, and a is to-be-detectedMode coefficient vector. During wavefront measurement, the slope vector G can be obtained by measuring the position deviation of the centroid of the sub-aperture light spot, and the generalized inverse matrix Z of the reconstruction matrix Z is solved by singular value decomposition + The least squares solution of the pattern coefficient vector a is obtained:
a＝Z + ·G
after the mode coefficient vector a is obtained, the wavefront to be measured can be obtained by using the linear combination of Zernike polynomials. The results are shown in figure 2.
The wavefront sensor may detect wavefront information using a CMOS sensor or may detect wavefront information using a CCD sensor.
And (3) obtaining wavefront related information related to the long wavelength and the short wavelength according to the excited light spot array diagram and the segmented sub-aperture, converting the wavefront related information according to frequency, and recovering by a mode method to obtain long wavelength wavefront information. The method for converting the wavefront related information is to fit by adopting a mode method to obtain the functional relation of the wavefront before and after conversion, so that the long wavelength wavefront information can be obtained through the short wavelength wavefront information. The specific functional relation is the same as the explanation of the step (2), and the least square solution of the mode coefficient is obtained through a mode method, so that the long wavelength information is obtained through the short wavelength information.
The principle of the invention is as follows: the multiphoton absorption effect of the organic material may cause the incident light to undergo frequency up-conversion, thereby stimulated emission of short wavelength fluorescence. The invention provides a method for generating short-wavelength fluorescence by multiphoton absorption of a fluorescent material based on the principle, which converts the wave front detection problem aiming at an infrared wave band into the wave front detection problem of a visible light wave band.
What is not described in detail in the present specification belongs to the prior art known to those skilled in the art.
Claims (5)
1. A wavefront sensing method for mid-far infrared bands, the method comprising the steps of:
step (1), generating long-wavelength light beams by a laser, and dividing and converging the light beams into a plurality of laser light beams by a micro lens array; a plurality of laser beams irradiate the surface of the fluorescent material; the fluorescent material is irradiated by high-power laser to generate nonlinear optical effect, multiphoton absorption phenomenon occurs, self-emitting visible light wave band fluorescence is generated, and the light beam finishes conversion on frequency; after the light beams are split and converged by the micro lens array, a light spot array image is excited on the surface of the fluorescent material, and the split sub-apertures meet the requirement that the number of pixels in a single sub-aperture is even;
step (2), fluorescence is detected by a CMOS detector, and short-wavelength wavefront information is obtained through a direct slope method or a mode method; the light spot array diagram corresponds to the resolution of the CMOS detector;
and (3) obtaining wavefront related information related to the long wavelength and the short wavelength according to the excited light spot array diagram and the segmented sub-aperture, converting the wavefront related information according to frequency, and recovering by a mode method to obtain long wavelength wavefront information.
2. The method for wavefront sensing for the mid-far infrared band of claim 1, further comprising: the fluorescent material in the step (1) can be in any shape or any state; the cross-sectional size of the fluorescent material is larger than the micro-lens array size, and the fluorescent material is placed in front of the detector.
3. The method for wavefront sensing for the mid-far infrared band of claim 2, further comprising: the arbitrary shape includes a circle, a square; the arbitrary state includes solid state and liquid state.
4. A wavefront sensing technology for the mid-far infrared band as set forth in claim 1, wherein: the method for converting the wavefront related information in the step (3) is to fit by adopting a mode method to obtain the function relation of the wavefront before and after conversion, so that the long wavelength wavefront information can be obtained through the short wavelength wavefront information.
5. A wavefront sensing technology for the mid-far infrared band as set forth in claim 1, wherein: the number of pixels in the single sub-aperture is 32x32; the wavefront related information is the centroid position of each sub-aperture spot.
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