CN116031329A - Preparation method of solar cell, solar cell and photovoltaic module - Google Patents

Abstract

The application relates to a preparation method of a solar cell, the solar cell and a photovoltaic module, comprising the following steps of; forming a first antireflection layer on the first surface of the substrate, wherein the reflectivity of the first surface after the first antireflection layer is formed is R1; forming a second antireflection layer on the second surface of the substrate, wherein the reflectivity of the second surface after the second antireflection layer is formed is R2; forming a mask layer on one side of the first anti-reflection layer away from the substrate, one side of the second anti-reflection layer away from the substrate and a third surface which is intersected with the first surface and the second surface; forming electrode grid lines on the first surface and the second surface, and after the electrode grid lines are formed, the reflectivity R3 and R1 of the mask layer corresponding to the first surface are as follows: 0.95R1R 3 is less than or equal to 1.05R1; the reflectivity R4 and R2 of the mask layer corresponding to the second surface satisfy: 0.95R2R 4 is less than or equal to 1.05R2, and the mask layer is arranged to be beneficial to reducing the possibility of background electroplating and edge leakage of the substrate, and improving the optical performance of the solar cell.

Description

Preparation method of solar cell, solar cell and photovoltaic module

Technical Field

The application relates to the technical field of photovoltaic cells, in particular to a preparation method of a solar cell, the solar cell and a photovoltaic module.

Background

With the development of technology, the application range of the solar cell is wider and wider, when the solar cell is manufactured, the phenomenon of background electroplating is easy to occur when the damage of the surface of the substrate is in the electroplating process, and meanwhile, the phenomenon of edge leakage is easy to occur when the substrate is in the electroplating process, and the phenomena can influence the production quality and the performance of the solar cell.

Disclosure of Invention

The application provides a preparation method of a solar cell, the solar cell and a photovoltaic module, which are used for solving the problems that the solar cell is easy to generate background electroplating and edge leakage.

The embodiment of the application provides a preparation method of a solar cell, which comprises the following steps of;

forming a first anti-reflection layer on a first surface of a substrate, wherein the reflectivity of the first surface after the first anti-reflection layer is formed is R1;

forming a second anti-reflection layer on the second surface of the substrate, wherein the reflectivity of the second surface after the second anti-reflection layer is formed is R2;

forming a mask layer on one side of the first anti-reflection layer far away from the substrate, one side of the second anti-reflection layer far away from the substrate and a third surface which is intersected with the first surface and the second surface;

forming an electrode grid line on the first surface and the second surface, wherein after the electrode grid line is formed, the reflectivity R3 and R1 of the mask layer corresponding to the first surface satisfy the following conditions: 0.95R1R 3 is less than or equal to 1.05R1; the reflectivity R4 and R2 of the mask layer corresponding to the second surface satisfy the following conditions: 0.95R2R 4 is less than or equal to 1.05R2.

In one possible embodiment, the mask layer includes at least one of silicon nitride, magnesium fluoride, titanium oxide, silicon oxynitride, and silicon oxide.

In one possible embodiment, the mask layer is silicon nitride or magnesium fluoride or titanium oxide, and the mask layer thickness d satisfies: d is more than or equal to 1nm and less than or equal to 30nm.

In one possible implementation manner, the mask layer is silicon oxynitride, and the thickness d of the mask layer satisfies: d is more than or equal to 1nm and less than or equal to 100nm.

In one possible embodiment, the mask layer is silicon oxide, and the thickness d of the mask layer satisfies: d is more than or equal to 10nm and less than or equal to 100nm.

In one possible embodiment, the mask layer has a thickness D, and the surface of the substrate is etched after the electrode gate line is formed has a thickness D, where D and D satisfy: D-D is more than or equal to 0.

In one possible embodiment, the step of forming electrode gate lines on the first surface and the second surface includes:

forming the electrode grid line with the height average value T on the first surface and the second surface, wherein the height average value T meets the following conditions: t is more than or equal to 5um and less than or equal to 20um.

In one possible embodiment, in the plurality of solar cells, a height average value of the electrode grid line of each solar cell ranges from 0.7T to 1.3T.

In one possible embodiment, the step of forming electrode gate lines on the first surface and the second surface includes;

etching the first surface and the second surface;

pretreating the first surface and the second surface;

and sequentially forming a first growth layer, a second growth layer and a third growth layer on the first surface and the second surface.

In one possible embodiment, the step of etching the first surface and the second surface comprises:

and carrying out laser etching or slurry etching or ion etching on the first surface and the second surface.

In one possible embodiment, the step of sequentially forming a first growth layer, a second growth layer, and a third growth layer on the first surface and the second surface includes:

electroplating or electroless plating the first, second and third growth layers on the first and second surfaces.

The embodiment of the application also provides a solar cell, which is prepared by the preparation method of the solar cell in any one of the above steps.

The embodiment of the application also provides a photovoltaic module, which comprises a packaging layer, a cover plate and at least one battery string, wherein the battery string is formed by electrically connecting a plurality of solar cells, the packaging layer is used for covering the surface of the battery string, and the cover plate is used for covering the packaging layer to be far away from the surface of the battery string.

The embodiment of the application provides a preparation method of a solar cell, the solar cell and a photovoltaic module, wherein the preparation method of the solar cell comprises the following steps of; forming a first antireflection layer on the first surface of the substrate, wherein the reflectivity of the first surface after the first antireflection layer is formed is R1; forming a second antireflection layer on the second surface of the substrate, wherein the reflectivity of the second surface after the second antireflection layer is formed is R2; forming a mask layer on one side of the first anti-reflection layer away from the substrate, one side of the second anti-reflection layer away from the substrate and a third surface which is intersected with the first surface and the second surface; forming electrode grid lines on the first surface and the second surface, and after the electrode grid lines are formed, the reflectivity R3 and R1 of the mask layer corresponding to the first surface are as follows: 0.95R1R 3 is less than or equal to 1.05R1; the reflectivity R4 and R2 of the mask layer corresponding to the second surface satisfy: 0.95R2R 4 is less than or equal to 1.05R2. By arranging the mask layer, the mask layer plays a role in protecting the surface of the substrate, so that the possibility of background electroplating at a damaged position is reduced. Meanwhile, the mask layer can play a role in isolating the liquid medicine from the surface of the substrate, so that the possibility that the liquid medicine corrodes the surface of the substrate is reduced, in addition, the mask layer is arranged on the third surface, the possibility that edge leakage occurs in the solar cell is reduced, and further the production quality of the solar cell is improved. On the other hand, the mask layer can be matched with the reflectivity of other film layers on the surface of the substrate, so that the optical performance of the solar cell is improved, and the performance and efficiency of the solar cell are improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.

Drawings

Fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present application;

fig. 2 is a schematic view of a substrate in a method for manufacturing a solar cell according to an embodiment of the present disclosure;

fig. 3 is a schematic diagram of a photovoltaic module according to an embodiment of the present application.

Reference numerals:

1-a substrate;

11-a first surface;

12-a second surface;

13-a third surface;

2-a mask layer;

3-a first growth layer;

4-a second growth layer;

5-a third growth layer;

10-a solar cell;

100-battery strings;

200-packaging layers;

300-cover plate.

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

Detailed Description

For a better understanding of the technical solutions of the present application, embodiments of the present application are described in detail below with reference to the accompanying drawings.

It should be understood that the described embodiments are merely some, but not all, of the embodiments of the present application. All other embodiments, based on the embodiments herein, which would be apparent to one of ordinary skill in the art without making any inventive effort, are intended to be within the scope of the present application.

The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.

It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.

As shown in fig. 1 and 2, an embodiment of the present application provides a method for manufacturing a solar cell 10, including;

s1, forming a first antireflection layer on a first surface 11 of a substrate 1, wherein the reflectivity of the first surface 11 after the first antireflection layer is formed is R1;

s2, forming a second antireflection layer on the second surface 12 of the substrate 1, wherein the reflectivity of the second surface 12 after the second antireflection layer is formed is R2;

s3, forming a mask layer 2 on one side of the first anti-reflection layer far away from the substrate 1, one side of the second anti-reflection layer far away from the substrate 1 and a third surface 13 intersecting the first surface 11 and the second surface 12;

s4, forming electrode grids on the first surface 11 and the second surface 12, and after forming the electrode grids, the reflectivities R3 and R1 of the mask layer 2 corresponding to the first surface 11 satisfy: 0.95R1R 3 is less than or equal to 1.05R1; the reflectivity R4 and R2 of the mask layer 2 corresponding to the second surface 12 satisfies: 0.95R2R 4 is less than or equal to 1.05R2.

The substrate 1 of the solar cell 10 may be a silicon substrate including, but not limited to, a monocrystalline silicon substrate, a polycrystalline silicon substrate, a monocrystalline-like silicon substrate, and the like. The substrate 1 has a first surface 11 and a second surface 12 disposed opposite to each other in the thickness direction, wherein the first surface 11 may be a light receiving surface facing the sun, and the second surface 12 may be a back surface of the solar cell 10. Before forming the first anti-reflection layer and the second anti-reflection layer, the preparation method of the solar cell 10 may further include a process flow of texturing, boron diffusion, depositing polysilicon or amorphous silicon, phosphorus diffusion, and the like, in S1 and S2, the first anti-reflection layer may be prepared on the first surface 11 by a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), and the second anti-reflection layer may be prepared on the second surface 12, and the first anti-reflection layer and the second anti-reflection layer may play a passivation role on the surface of the substrate 1, so as to be beneficial to improving the performance of the solar cell 10, and in particular, the first anti-reflection layer and the second anti-reflection layer may include silicon nitride, silicon oxide, silicon oxynitride, and the like. The reflectivity of the first surface 11 after forming the first anti-reflection layer is R1, the reflectivity of the second surface 12 after forming the second anti-reflection layer is R2, wherein R1 may be the average of the reflectivities of several points on the first surface 11, R2 may be the average of the reflectivities of several points on the second surface 12, and the values of R1 and R2 may be different. In step S3, the mask layer 2 may be formed by chemical vapor deposition (Chemical Vapor Deposition, CVD) or physical vapor deposition (Physical Vapour Deposition, PVD), and the mask layer 2 may be formed on the first surface 11, the second surface 12, and the third surface 13, where the third surface 13 may be surrounded by all sides around the substrate 1, so that the mask layer 2 may fully cover the surface of the substrate 1. The mask layer 2 can have good corrosion resistance and insulating properties, so that the surface of the substrate 1 can be protected and insulated. After forming the mask layer 2, an electrode grid line can be formed on the surface of the substrate 1 by using an electroplating process, in the step S4, the mask layer 2 can be corroded by liquid medicine, after forming the electrode grid line, the mask layer 2 corroded by the liquid medicine can be subjected to reflectivity test, R3 can be the average value of the reflectances of a plurality of points in the mask layer 2 on the first surface 11, R4 can be the average value of the reflectances of a plurality of points in the mask layer 2 on the second surface 12, wherein the relation between R1 and R3 is 0.95R1-1.05R1, the relation between R4 and R2 is 0.95R2-1.05R2.

The specific test method of R1, R3 and R4 is as follows, taking the first surface 11 as an example, after the first surface 11 forms the first antireflection layer, nine test points can be uniformly arranged in the first surface 11, the reflectivity of the nine points is tested, the average value of the reflectivity results of the nine points is R1, then a mask layer 2 is formed on the first surface 11, after the mask layer 2 is completely corroded by liquid medicine, the reflectivity test is carried out on the mask layer 2 at the positions of the nine test points, the average value of the reflectivity results of the nine points is R3, and the requirement 0.95R1R 3 which is more than or equal to 0.95R1 and less than or equal to 1.05R1 between the R1 and the R3 is obtained. The test method of the second surface 12 is similar, and the reflectivity R4 and R2 of the mask layer 2 on the second surface 12 are obtained to satisfy the requirement that R4 is more than or equal to 0.95R2 and less than or equal to 1.05R2. In the test process, the number of test points may be four, six or ten, which is not limited in the embodiment of the present application.

In the prior art, the surface of the substrate of the solar cell is damaged in the process of forming the anti-reflection layer, the electrode grid line and the like, for example, corrosive liquid medicines are used in the process of forming the electrode grid line, the liquid medicines damage the surface of the substrate to cause damage to the surface of the substrate, and in the process of subsequent electroplating, background electroplating occurs at the damaged places. Background plating refers to non-ideal plating at damage and defects on the surface of a substrate, and the background plating phenomenon affects the performance of a solar cell and the quality of solar cell production. Meanwhile, the substrate can also have the phenomenon of edge leakage in the electroplating process, namely the situation that the current is abnormally shunted at the edges around the substrate in the electroplating process, and the edge leakage can also influence the electroplating process, so that the situation that the plating layer is deposited poorly is easily caused, and the production quality of the solar cell is influenced. In addition, there is a problem that the optical properties of the substrate surface are lowered after the electroplating process, which also has an effect on the performance of the solar cell.

In the embodiment of the application, before the electrode grid line is formed, a layer of mask layer 2 is covered on the surface of the substrate 1, and at this time, damage caused by formation of an anti-reflection layer and the like on the surface of the substrate 1 can be covered by the mask layer 2, so that the mask layer 2 protects the surface of the substrate 1, and the possibility of background electroplating at the damaged position is reduced. Meanwhile, in the process of forming the electrode grid line, the mask layer 2 has higher corrosion resistance, so that the mask layer 2 can play a role in isolating the liquid medicine from the surface of the substrate 1, thereby being beneficial to reducing the possibility that the liquid medicine corrodes the surface of the substrate 1, further being beneficial to reducing the possibility that the surface of the substrate 1 is damaged to generate background electroplating, in addition, the mask layer 2 can also play an insulating role, so that the mask layer 2 is arranged on the third surface 13, being beneficial to reducing the possibility that the solar cell 10 generates edge leakage, and further being beneficial to improving the production quality of the solar cell 10. On the other hand, the mask layer 2 can be matched with the reflectivity of other film layers on the surface of the substrate 1, so that the mask layer 2 has proper reflectivity, thereby enabling the mask layer 2 to play a passivation role on the surface of the substrate 1, being beneficial to reducing light reflection, further being beneficial to improving the light transmittance of the surface of the solar cell 10, enhancing the concentration of surface carriers and being beneficial to improving the cell efficiency of the solar cell 10. The film layers disposed on the first surface 11 and the second surface 12 of the substrate 1 are different, so that the optical properties of the first surface 11 and the second surface 12 are different, the reflectivities of the first surface 11 and the second surface 12 are also different, and the reflectivities of the mask layer 2 can be respectively designed correspondingly to the first surface 11 and the second surface 12, i.e. the reflectivities of the mask layer 2 can be correspondingly adjusted according to the positions of the mask layer 2, so as to meet the requirements of the optical properties of different surfaces of the substrate 1. The design ensures that the surface of the substrate 1 can still have proper reflectivity after the electroplating process, and reduces the possibility of the optical performance of the solar cell 10 being reduced due to the electroplating process, thereby being beneficial to improving the optical performance of the solar cell 10, further being beneficial to improving the cell efficiency of the solar cell 10 and further being beneficial to improving the production quality of the solar cell 10.

In one possible embodiment, the mask layer 2 includes at least one of silicon nitride, magnesium fluoride, titanium oxide, silicon oxynitride, and silicon oxide.

The mask layer 2 may include one or more of silicon nitride, magnesium fluoride, titanium oxide, silicon oxynitride and silicon oxide, and the composition of the mask layer 2 may be the same as or different from the first anti-reflection layer and the second anti-reflection layer. The adoption of the material can enable the mask layer 2 to have good corrosion resistance and insulating property, thereby playing a role in protecting and insulating the surface of the substrate 1, reducing the possibility of background electroplating and edge leakage, and being beneficial to improving the production quality of the solar cell 10, and meanwhile, the adoption of the material is beneficial to enabling the mask layer 2 to have proper reflectivity, enabling the reflectivity of the mask layer 2 to be matched with the reflectivity of other film layers, and being beneficial to improving the optical property of the solar cell 10 and further beneficial to improving the efficiency of the solar cell 10.

As shown in fig. 2, in one possible embodiment, the mask layer 2 is silicon nitride or magnesium fluoride or titanium oxide, and the thickness d of the mask layer 2 is as follows: d is more than or equal to 1nm and less than or equal to 30nm.

When the mask layer 2 is one of silicon nitride, magnesium fluoride and titanium oxide, the thickness d of the mask layer 2 may be 1nm, 5nm, 10nm, 15nm, 20nm or 30nm, or may be other values within the above range, which is not limited in the embodiment of the present application. By limiting the thickness and material of the mask layer 2, the mask layer 2 has a suitable reflectivity, and the optical performance of the solar cell 10 can be improved by arranging the mask layer 2, so that the overall performance and efficiency of the solar cell 10 can be improved.

As shown in fig. 2, in one possible embodiment, the mask layer 2 is silicon oxynitride, and the thickness d of the mask layer 2 satisfies: d is more than or equal to 1nm and less than or equal to 100nm.

When the mask layer 2 is silicon oxynitride, the thickness d of the mask layer 2 may be 1nm, 10nm, 50nm, 80nm or 100nm, or may be other values within the above range, which is not limited in the embodiment of the present application, and the mask layer 2 may have a suitable reflectivity by limiting the thickness and the material of the mask layer 2, so that the reflectivity of the mask layer 2 may be matched with the reflectivity of other film layers on the surface of the substrate 1, which is further beneficial to improving the optical performance of the solar cell 10.

As shown in fig. 2, in one possible embodiment, the mask layer 2 is silicon oxide, and the thickness d of the mask layer 2 satisfies: d is more than or equal to 10nm and less than or equal to 100nm.

When the mask layer 2 is silicon oxide, the thickness d of the mask layer 2 may be 10nm, 30nm, 50nm, 80nm or 100nm, or may be other values within the above range, which is not limited in the embodiment of the present application, and the mask layer 2 can have a suitable reflectivity by limiting the thickness and the material of the mask layer 2, so that the reflectivity of the mask layer 2 can be matched with the reflectivity of other film layers on the surface of the substrate 1, and further, the optical performance of the solar cell 10 is improved.

As shown in fig. 2, in one possible embodiment, the mask layer 2 has a thickness D, and the surface of the substrate 1 is etched after the electrode gate line is formed has a thickness D, where D and D satisfy: D-D is more than or equal to 0.

The mask layer 2 is corroded by the liquid medicine in the step S4, and when D-D is more than 0 after the step S4 is completed, the mask layer 2 is left and is not completely corroded. When D-d=0, this indicates that mask layer 2 is just completely etched away, while the other layers below mask layer 2 are not. The design is favorable for protecting the surface of the substrate 1 by the mask layer 2, reducing the possibility of damage caused by corrosion of the surface of the substrate 1 by liquid medicine, and further being favorable for reducing the possibility of background electroplating on the surface of the substrate 1.

In one possible embodiment, the step S4 includes:

s41, forming electrode grid lines with the height average value of T on the first surface 11 and the second surface 12, wherein the height average value T meets the following conditions: t is more than or equal to 5um and less than or equal to 20um.

The height direction of the electrode grid line may be parallel to the thickness direction of the substrate 1, and the height average value T of the electrode grid line may be 5um, 10um, 15um or 20um, or may be other values within the above range, which is not limited in the embodiment of the present application. In the process of forming the electrode grid line, a plurality of growth layers are required to be deposited on the surface of the substrate 1, and by arranging the mask layer 2, the possibility of background electroplating and edge leakage on the surface of the substrate 1 is reduced, so that each growth layer can be stably deposited in the process of forming the electrode grid line, the height of the electrode grid line can be kept in a reasonable range, and the production quality and performance of the solar cell 10 are improved.

In one possible embodiment, the height average value of the electrode grid line of each solar cell 10 is in the range of 0.7T to 1.3T among the plurality of solar cells 10.

In mass production of the solar cells 10, a certain fluctuation occurs in the height average value of the electrode grid lines on each solar cell 10. In the prior art, the height average value of the electrode grid line on one solar cell is A, so that the height average value of the electrode grid line of each solar cell can fluctuate within the range of 0.2A-1.8A in a plurality of solar cells. In the embodiment of the application, by setting the mask layer 2, the situations of background electroplating and edge leakage of the solar cell 10 are reduced, so that the stability of deposition of each growth layer in the electrode grid line can be improved, the possibility of poor deposition of the growth layer is reduced, namely, the possibility of reducing the deposition amount of the growth layer due to the occurrence of background electroplating and edge leakage is reduced, therefore, the height average value T of the electrode grid line in the embodiment of the application can be larger than A, and the height average value of the electrode grid line of each solar cell 10 can stably fluctuate within the range of 0.7T-1.3T, therefore, compared with the prior art, the fluctuation range of the height average value of the electrode grid line in the embodiment of the application is converged, the production quality of the solar cell 10 is improved, namely, the yield of the solar cell 10 product is improved, and the efficiency and the stability of the solar cell 10 are improved.

As shown in fig. 2, in one possible embodiment, step S4 includes;

s42, etching the first surface 11 and the second surface 12;

s43, pretreatment is carried out on the first surface 11 and the second surface 12;

s44, forming a first growth layer 3, a second growth layer 4 and a third growth layer 5 on the first surface 11 and the second surface 12 in sequence.

In step S42, the electrode grid line pattern may be formed on the surface of the substrate 1 by etching, and the electrode grid line pattern may be designed according to the actual use requirement of the solar cell 10. In step S43, the surface of the substrate 1 may be pretreated with a corresponding chemical solution, and impurities such as silicon oxide generated in the etched area may be removed by the pretreatment, so as to facilitate improvement of stability of electrical connection between the electrode grid line and the substrate 1 in the subsequent step. The electrode grid line comprises a first growth layer 3, a second growth layer 4 and a third growth layer 5, in the step S44, the first growth layer 3, the second growth layer 4 and the third growth layer 5 are sequentially deposited in the direction away from the substrate 1, and each growth layer can be deposited according to the pattern formed in the step S42, wherein the first growth layer 3 can be metallic nickel, the second growth layer 4 can be metallic copper and serve as a conductive main body part of the electrode grid line, and the third growth layer 5 can be metallic silver and can play a role of oxidation prevention. After each growth layer is formed, an acid washing or water washing step is also needed in the corresponding groove to improve the quality of each growth layer.

In one possible embodiment, the step S42 includes:

the first surface 11 and the second surface 12 are subjected to laser etching or slurry etching or ion etching.

The pattern of the electrode grid line required by the solar cell 10 can be formed on the surface of the substrate 1 by the etching method, and the etching method can be specifically selected according to actual production requirements, so that the design is beneficial to improving the flexibility of electrode grid line preparation, and the whole preparation process of the solar cell 10 is beneficial.

In one possible embodiment, the step S44 includes:

the first growth layer 3, the second growth layer 4 and the third growth layer 5 are electroplated or electroless plated on the first surface 11 and the second surface 12.

In the step S44, each growth layer may be formed by electroplating or electroless plating, and by providing the mask layer 2, the stability of deposition of each growth layer during electroplating or electroless plating is improved, and the possibility of poor deposition of each growth layer due to breakage of the surface of the substrate 1 is reduced, thereby improving the quality of the electrode grid line and further improving the production quality of the solar cell 10.

The embodiment of the application also provides a solar cell 10, wherein the solar cell 10 is prepared by the preparation method of the solar cell 10.

The first surface 11 may be a front surface of the substrate 1, the first surface 11 may be formed with an emitter, the emitter may form a PN junction structure with the substrate 1, the second surface 12 may be a back surface of the substrate 1, and the second surface 12 may be further formed with a tunneling layer and a doped conductive layer, where the tunneling layer may be a silicon oxide layer, and may be used as a tunneling layer of majority carriers, and may be used for chemical passivation of the surface of the substrate 1, so as to facilitate reduction of interface states, and the doped conductive layer may form an energy band bend on the back surface of the substrate 1, so as to realize selective transmission of carriers, facilitate reduction of recombination loss, and ensure the transmission efficiency of carriers. The preparation method is beneficial to improving the quality of the solar cell 10, thereby being beneficial to improving the yield of the solar cell 10 and improving the performance and efficiency of the solar cell 10.

As shown in fig. 3, the embodiment of the present application further provides a photovoltaic module, which includes an encapsulation layer 200, a cover plate 300, and at least one cell string 100, where the cell string 100 is formed by electrically connecting a plurality of solar cells 10 as described above, the encapsulation layer 200 is used to cover a surface of the cell string 100, and the cover plate 300 is used to cover a surface of the encapsulation layer 200 away from the cell string 100.

In the cell string 100, a plurality of solar cells 10 are electrically connected in series and/or parallel. The cap plate 300, the encapsulation layer 200, and the battery string 100 may be pressed in a certain order through a lamination process to obtain a laminate assembly, and a frame may be subsequently mounted to the laminate assembly to form a photovoltaic assembly. The photovoltaic module can perform a photoelectric conversion function through the cell string 100, that is, can convert light energy absorbed by the solar cell 10 into electric energy.

The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims (13)

1. A method of manufacturing a solar cell, comprising;

forming a first anti-reflection layer on a first surface (11) of a substrate (1), wherein the reflectivity of the first surface (11) after the first anti-reflection layer is formed is R1;

forming a second anti-reflection layer on a second surface (12) of the substrate (1), wherein the reflectivity of the second surface (12) after the second anti-reflection layer is formed is R2;

forming a mask layer (2) on one side of the first anti-reflection layer far away from the substrate (1), one side of the second anti-reflection layer far away from the substrate (1) and a third surface (13) which is intersected with the first surface (11) and the second surface (12);

forming an electrode grid line on the first surface (11) and the second surface (12), wherein after the electrode grid line is formed, the reflectivity R3 and R1 of the mask layer (2) corresponding to the first surface (11) are as follows: 0.95R1R 3 is less than or equal to 1.05R1; the reflectivity R4 and R2 of the mask layer (2) corresponding to the second surface (12) satisfy the following conditions: 0.95R2R 4 is less than or equal to 1.05R2.

2. The method of manufacturing a solar cell according to claim 1, wherein the mask layer (2) comprises at least one of silicon nitride, magnesium fluoride, titanium oxide, silicon oxynitride and silicon oxide.

3. The method for manufacturing a solar cell according to claim 2, wherein the mask layer (2) is silicon nitride or magnesium fluoride or titanium oxide, and the thickness d of the mask layer (2) satisfies: d is more than or equal to 1nm and less than or equal to 30nm.

4. The method for manufacturing a solar cell according to claim 2, wherein the mask layer (2) is silicon oxynitride, and the thickness d of the mask layer (2) satisfies: d is more than or equal to 1nm and less than or equal to 100nm.

5. The method for manufacturing a solar cell according to claim 2, wherein the mask layer (2) is silicon oxide, and the thickness d of the mask layer (2) satisfies: d is more than or equal to 10nm and less than or equal to 100nm.

6. The method of manufacturing a solar cell according to claim 2, characterized in that the mask layer (2) has a thickness D and the surface of the substrate (1) is etched after forming the electrode grid line has a thickness D, wherein D and D satisfy: D-D is more than or equal to 0.

7. The method of manufacturing a solar cell according to claim 6, wherein the step of forming electrode grids on the first surface (11) and the second surface (12) comprises:

forming the electrode grid line with the height average value T on the first surface (11) and the second surface (12), wherein the height average value T meets the following conditions: t is more than or equal to 5um and less than or equal to 20um.

8. The method of manufacturing a solar cell according to claim 7, wherein, among the plurality of solar cells (10), a height average value of the electrode grid line of each of the solar cells (10) is in a range of 0.7T to 1.3T.

9. The method of manufacturing a solar cell according to any one of claims 1 to 8, wherein the step of forming electrode grids on the first surface (11) and the second surface (12) comprises;

-etching the first surface (11) and the second surface (12);

-pre-treating said first surface (11) and said second surface (12);

and sequentially forming a first growth layer (3), a second growth layer (4) and a third growth layer (5) on the first surface (11) and the second surface (12).

10. The method of manufacturing a solar cell according to claim 9, wherein the step of etching the first surface (11) and the second surface (12) comprises:

-laser etching or slurry etching or ion etching of the first surface (11) and the second surface (12).

11. The method of manufacturing a solar cell according to claim 9, wherein the step of sequentially forming a first growth layer (3), a second growth layer (4) and a third growth layer (5) on the first surface (11) and the second surface (12) comprises:

-electroplating or electroless plating of the first growth layer (3), the second growth layer (4) and the third growth layer (5) on the first surface (11) and the second surface (12).

12. Solar cell, characterized in that the solar cell (10) is produced by a method for producing a solar cell (10) according to any one of claims 1 to 11.

13. A photovoltaic module, comprising:

at least one cell string (100), the cell string (100) consisting of a plurality of solar cells (10) according to claim 12 electrically connected;

-an encapsulation layer (200), the encapsulation layer (200) being for covering a surface of the battery string (100);

-a cover plate (300), the cover plate (300) being adapted to cover a surface of the encapsulation layer (200) remote from the battery string (100).

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