CN116024537A - Hard anti-reflection film and preparation method thereof - Google Patents
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Abstract
The invention relates to the technical field of optical films, and particularly discloses a hard anti-reflection film with high surface hardness and low reflectivity and a preparation method thereof, wherein the preparation method of the hard anti-reflection film comprises the steps of selecting and cleaning a substrate; sputtering a silicon target by controlling N 2 And O 2 Plating Si with different refractive index on substrate x O y N z The layers are formed into an anti-reflection film, x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4. The hard anti-reflection film comprises a substrate and an anti-reflection film stacked on the substrate, wherein the anti-reflection film comprises a plurality of Si x O y N z Layers of Si x O y N z The layers are stacked on the substrate in a manner of alternately arranging the refractive index, x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to a hard anti-reflection film with high surface hardness and low reflectivity and a preparation method thereof.
Background
In consumer electronics displays, how to reduce the surface reflectivity of the display is important for improving the user experience and reducing the power consumption of the display, and is beneficial for the user to see the display content on the display. At present, the consumer electronic product mainly realizes the adjustment of the surface reflectivity of the display screen by plating an anti-reflection and anti-reflection optical film layer on the display screen, but the surface layer of the optical film layer is a stack of transparent metal oxide films with high and low refractive indexes, the hardness is insufficient, when the electronic product is used, the frequently touched use scene makes the anti-reflection and anti-reflection optical film layer easy to be scratched and damaged, thereby affecting the experience of a user for watching the content of the display screen and shortening the service life of the display screen.
Disclosure of Invention
In view of the above, it is necessary to provide a hard antireflective film having a high surface hardness and a low reflectance, and a method for producing the same.
A method for preparing a hard anti-reflection film, comprising the following steps:
selecting and cleaning a substrate;
sputtering a silicon target by controlling N 2 And O 2 Plating Si with different refractive index on substrate x O y N z Forming an anti-reflection film by the layer, wherein x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4; and Si of the surface layer of the antireflection film x O y N z The N atomic number y of the layer is non-zero.
Adjusting N, O content in each layer of film to adjust the refraction; the N/O ratio is higher, the refractive index is higher, and the Si is approached 3 N 4 Refractive index, N/O ratio is low, refractive index is low, approaching SiO 2 Refractive index.
In one embodiment, the substrate is made of glass or sapphire or plastic material.
In one embodiment, the anti-reflection film comprises Si of different refractive indexes alternately stacked x O y N z 。
In one embodiment, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
In one embodiment, the thickness of the anti-reflection film is between 200 and 3000nm.
In one embodiment, the substrate is a glass substrate, and the light transmittance of the anti-reflection film on the glass substrate in the visible light range of 400-700nm is more than 91% and the reflectivity is less than 8%; the nanometer hardness of the anti-reflection film is more than 1200HV under the pressing depth of 100-500 nm.
In one embodiment, the substrate is a glass substrate, the light transmittance of the anti-reflection film on the glass substrate in the visible light range of 400-700nm is more than 90%, and the reflectivity is less than 8%; the surface hardness of the anti-reflection film is characterized by hardness through a nano indentation instrument, and the nano hardness is more than 1200HV under the indentation depth of 100-500 nm.
The invention also discloses a hard anti-reflection film prepared by the method, which comprises a substrate and an anti-reflection film stacked on the substrate, wherein the anti-reflection film comprises a plurality of Si x O y N z Layers of each of the Si x O y N z The layers are stacked on the substrate in a mode of alternately arranging the refractive index, x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4; and Si of the surface layer of the antireflection film x O y N z The N atomic number y of the layer is non-zero.
In one embodiment, the substrate is made of glass or sapphire or plastic material; each layer of the Si x O y N z The layers are plated on the substrate layer by layer in a sputtering coating mode and are sequentially stacked to form the high-hardness anti-reflection film.
In one embodiment, the anti-reflective film comprises an alternating stack of SiO 2 And Si (Si) 3 N 4 Or different refractive indexSiON film layer with same N and O content, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
The hard anti-reflection film and the preparation method thereof are implemented, a silicon target is sputtered on a substrate, and N is controlled 2 And O 2 Generates Si with different atomic numbers of Si, O and N in stacked arrangement x O y N z Layers such that each Si x O y N z The refractive index of the layer is changed, and the N atoms are introduced so that Si x O y N z The hardness of the layer is obviously higher than that of SiO 2 Thereby improving the surface hardness of the anti-reflection film; o atom introduction, possible for Si x O y N z The refractive index of the layer is adjusted by setting Si with different layers, thicknesses and atomic numbers x O y N z A layer, finally making the refractive index of the anti-reflection film be between SiO 2 And Si (Si) 3 N 4 The reflectivity of the anti-reflection film is reduced by any value, the use requirement of the anti-reflection film is met, and meanwhile, the anti-reflection film is prevented from being scratched to cause damage, so that the service life of the anti-reflection film is prolonged.
Drawings
FIG. 1 is a schematic structural view of a hard anti-reflection film according to an embodiment of the present invention;
FIG. 2 is a top view of a vacuum sputtering chamber according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a film layer arrangement sequence in embodiment 1 of the present invention;
FIG. 4 shows Si obtained at different flow rates of nitrogen-oxygen ratios for SiON film layers of the present invention x O y N z Is a graph of the different refractive index data of (a);
FIG. 5 is a spectrum of an anti-reflection film in example 1 of the present invention;
FIG. 6 is a schematic diagram of a film layer arrangement sequence in embodiment 2 of the present invention;
FIG. 7 is a spectrum of an antireflection film in example 2 of the present invention;
FIG. 8 is a schematic diagram of a film layer arrangement sequence in embodiment 3 of the present invention;
fig. 9 is a spectrum of an antireflection film in example 3 of the present invention.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
Aiming at the technical problems of insufficient surface hardness and easy scratch of an anti-reflection and light-increasing optical film layer in the prior art, the invention comprises the steps of sputtering a silicon target on sputtering coating equipment to control the introduction of N with different flow rates 2 And O 2 Takes part in the reaction to generate Si with different refractive indexes x O y N z Controlling Si of different thickness and layer number x O y N z Stacking, plating to obtain a glass body with a surface hardness far higher than that of the glass body and close to that of Si 3 N 4 The film layer with the film stone hardness has the functions of reducing the reflectivity and increasing the light transmittance, and is mainly used as the cover glass of the consumer electronic display and the battery cover glass. Specifically by adjusting the N introduced during sputtering of a silicon target on a substrate 2 And O 2 N which reacts with Si in different film forming stages 2 And O 2 Is different in the amount to produce Si with different Si, N and O atoms x O y N z A layer coated with Si by sputtering 3 N 4 The display screen has the advantages that the surface hardness of the film layer is greatly improved, the surface reflectivity is reduced, the content requirement of a user for watching the display screen is met, the damage condition of the film layer by scraping is reduced, and the service life of the display screen is prolonged. In the present invention, the method is carried out by N 2 And O 2 Si generated by flow control x O y N z Has the characteristic of transparency in the visible light domain.
Specifically, the method for preparing the hard anti-reflection film in the embodiment comprises the following steps:
the substrate is selected and cleaned.
The substrate is made of glass, sapphire or plastic materials, and one of the glass substrate, the sapphire substrate or the plastic substrate can be selected as a coating substrate. The cleaning of the substrate is mainly used for removing impurities on the surface of the substrate and modifying the surface of the substrate so as to enable the silicon target to sputter and Si and N 2 、O 2 In the reaction process, the generated film layer can be stably attached to the substrate so as to improve the binding force of the substrate and the anti-reflection film.
Sputtering a silicon target by controlling N 2 And O 2 Plating Si with different refractive index on substrate x O y N z The layers are used for forming an anti-reflection film, so that a hard anti-reflection film is obtained, the structure of the hard anti-reflection film is shown in figure 1, wherein x is a value between 1 and 3, y is a value between 0 and 2, z is a value between 0 and 4, and x, y and z can be integers or fractions. Si of the surface layer of the antireflection film x O y N z The N-atom number y of the layer is non-zero, i.e. the surface layer of the anti-reflection film is always non-SiO 2 And a film layer for ensuring the surface hardness of the anti-reflection film.
Si with different numbers of Si, N and O atoms x O y N z The refractive indices of the layers are significantly different, and N 2 And O 2 The flow difference of the SiON film stack is larger, and different optical constants can be obtained for each SiON film by adjusting the N/O ratio of each SiON film so as to achieve the refractive index value of each SiON film stack designed by the anti-reflection film stack, thereby achieving the requirement of reducing reflection and improving the screen viewing experience of users.
In this embodiment, si is selected according to the number of Si, N, O atoms x O y N z The layers may have a variety of options. For example, when x=1, y=2, and z=0, si x O y N z SiO2; when x=3, y=0, and z=4, si x O y N z Si3N4, x, y, z are used to illustrate SiON films of differing N, O content,Si x O y N z the layer has a refractive index of SiO 2 With Si 3 N 4 The SiON film layer materials which are arbitrarily adjustable are collectively called. In one embodiment, the anti-reflective film comprises an alternating stack of Si of different refractive indices x O y N z . Preferably, the anti-reflection film comprises alternately stacked SiO2 and Si3N4 or Si x O y N z The surface of the anti-reflection film is also a SiON film (i.e. SiON film with different N, O, si atomic numbers). In the present embodiment, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
To ensure that the anti-reflective film meets different spectral requirements and surface hardness characteristics, the thickness of the anti-reflective film is between 200-3000nm. After the preparation of the hard anti-reflection film is finished, testing the hard anti-reflection film with a glass piece as a substrate, wherein the light transmittance of the anti-reflection film in the visible light range of 400-700nm is more than 91%, and the reflectivity is less than 8%; the nano hardness of the anti-reflection film is higher than 1200HV under the indentation depth of 100-500nm by nano hardness measurement characterized by a nano indentation instrument. In another embodiment, the substrate is a glass substrate, and the light transmittance of the anti-reflection film on the glass substrate under the visible light range of 400-700nm is more than 90%, and the reflectivity is less than 8%; the surface hardness of the anti-reflection film is characterized by hardness through a nano indentation instrument, and the nano hardness is more than 1200HV under the indentation depth of 100-500 nm. In the examples disclosed herein, the transmittance of the antireflective film at 400-700nm in the visible light range can be up to 94% and the reflectance reduced to 5% (single sided coating); the anti-reflection film has nano hardness of more than 1200HV under the indentation depth of 100-500nm in nano indentation measurement.
Referring to FIG. 1, the invention also discloses a hard anti-reflection film prepared by the method, which comprises a substrate and an anti-reflection film stacked on the substrate, wherein the anti-reflection film comprises a plurality of Si x O y N z Layers of Si x O y N z The layers are stacked on the substrate in a manner of alternately arranging the refractive index, x is a value between 1 and 3, y is a value between 0 and 2, z is a value between 0 and 4, and x, y and z can beThe number of the components can be an integer or a fraction or decimal; si of the surface layer of the antireflection film x O y N z The N atom number y of the layer is non-zero so as to ensure that the surface layer of the anti-reflection film is non-SiO 2 And the film layer is used for ensuring the surface hardness of the anti-reflection film. In this embodiment, the substrate is made of glass or sapphire or plastic material; layers of Si x O y N z The layers are plated on the substrate layer by layer in a sputtering coating mode and are sequentially stacked to form the anti-reflection film. Further, the anti-reflection film includes SiO alternately stacked 2 And Si (Si) 3 N 4 Or SiON film layers with different refractive indexes and different N and O contents, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
The following describes a method for preparing the hard anti-reflection film in combination with a specific example, and verifies the properties of the hard anti-reflection film.
Example 1
Step S1: and (3) cleaning the double-sided polished glass substrate with BK7t=1.0mm, attaching the double-sided polished glass substrate to a rotary cylindrical workpiece frame (shown in fig. 2) of a sputtering coating device, vacuumizing to 1.5.0E-3Pa, starting ICP (inductively coupled plasma) cleaning the surface of the glass substrate, removing impurity gases, water and gas adhesion and organic pollutant residues on the surface of the glass substrate, and enhancing the surface activity of the glass substrate. Then Argon Ar (Argon) 100sccm and oxygen O are introduced 2 200sccm, and cleaning for 120S under ICP power of 2 KW.
Step S2: sputtering a silicon target and plating a SiON film layer. In this example, the plating conditions of 6 different types of SiON films, namely SiO in the following table, were set 2 SiON-1, siON-2, siON-3, siON-4 and Si 3 N 4 On the sputtering coating equipment, the following table parameters are adopted to coat a multi-layer film system, wherein the N content in the film layer is higher, namely more N is introduced 2 The film layer has a higher refractive index; the N content is lower, i.e. more O is introduced 2 Less N 2 Has a lower refractive index. And (3) through superposition of materials with high and low refractive indexes, optimizing the thickness of each layer to obtain the anti-reflection coating layer stack, wherein the method comprises the following steps of:
TABLE 1 SiON film plating parameters table
| Si-TG×3 | TG- |
ICP_Power | ICP_Ar | ICP_O 2 | ICP_N 2 | |
| SiO2 | 10 | 200 | |
100 | 250 | 0 |
| SiON-1 | 10 | 200 | |
100 | 220 | 40 |
| SiON-2 | 10 | 200 | |
100 | 200 | 70 |
| SiON-3 | 10 | 200 | |
100 | 170 | 100 |
| SiON-4 | 10 | 200 | |
100 | 120 | 150 |
| |
10 | 200 | |
100 | … | … |
| |
10 | 200 | |
100 | 0 | 280 |
Ar gas with the total amount of 55/65/80 being 200sccm is introduced into the upper, middle and lower targets of each pair of targets at each silicon target, and N2 and O2 with different flow rates are controlled to participate in the reaction at an ICP source according to the table to generate Si with different refractive indexes and film layer setting sequences as shown in figure 3 x O y N z In the anti-reflection film, in the film layer arrangement sequence, siON film layers with different labels are plated according to the corresponding film layer processing conditions in the table, and the thickness of each film layer is referred to in fig. 3, and can be adjusted according to the finally required refractive index and reflectivity of the anti-reflection film. Plating out Si with different thickness and refractive index according with design requirement x O y N z After 2200s of film stacking and plating, 18 layers of film plating with a total thickness of 1511nm are completed. The results of measuring the reflectance and refractive index of each SiON film layer in table 1 are shown in fig. 4.
According to the measurement, the values of the nano hardness of the hard anti-reflection film adopting the SiON film layer setting sequence when the nano indentation instrument is adopted are shown in the following table:
table 2 table of hardness test of hard anti-reflection film in example 1
It can be seen that the surface hardness of the plated film layer is far higher than that of the glass body and is close to Si 3 N 4 The hardness of the film of the hard anti-reflection film is greatly improved relative to the hardness (600-700 HV) of the glass body.
Referring further to fig. 5, the spectral curve is measured by a spectrophotometer, and in the visible light range of 400-700nm, the hard anti-reflection film has the functions of reducing the reflectivity and increasing the light transmittance, and the reflectivity is reduced from 8% to 5% by increasing the film from 91% to 94%.
Example 2
Step S1: and (3) cleaning the double-sided polished glass substrate with BK7t=1.0mm, attaching the double-sided polished glass substrate to a rotary cylindrical workpiece frame of a sputtering coating device, vacuumizing to 1.5.0E-3Pa, starting ICP (inductively coupled plasma) cleaning the surface of the glass substrate, removing the impurity gas, the water gas adhesion and the organic pollutant residue on the surface of the glass substrate, and enhancing the surface activity of the glass substrate. Then Argon Ar (Argon) 100sccm and oxygen O are introduced 2 200sccm, and cleaning for 120S under ICP power of 2 KW.
Step S2: sputtering a silicon target and plating a SiON film layer. The respective SiON film layers (or Si) of the hard anti-reflection film shown in fig. 6 were plated according to SiON film layer plating parameters shown in table 1 x O y N z A layer). Ar gas with the total amount of 55/65/80 of 200sccm is introduced into the upper, middle and lower targets of each pair of targets at each silicon target, and N2 and O2 with different flow rates are controlled to participate in the reaction at an ICP source according to the table 1 to generate Si with different refractive indexes and film layer setting sequences as shown in figure 6 x O y N z The antireflective films were constructed in which, in the film arrangement sequence, siON films of different grades were plated according to the corresponding film processing conditions in the table above, the thickness of each film being referred to in fig. 6. Plating out Si with different thickness and refractive index according with design requirement x O y N z And stacking the film layers, and plating the film layers for 1700s to finish plating the film layers with the thickness of 1145nm in total.
According to the measurement, the values of the nano hardness of the hard anti-reflection film adopting the SiON film layer setting sequence when the nano indentation instrument is adopted are shown in the following table:
table 3 table of hardness test of hard anti-reflection film in example 2
It can be seen that the surface hardness of the plated film layer is far higherThe surface hardness of the glass body is close to Si 3 N 4 The hardness of the film of the hard anti-reflection film is greatly improved relative to the hardness (600-700 HV) of the glass body.
Referring further to FIG. 7, the spectral curve is measured by a spectrophotometer, and the hard anti-reflection film has the functions of reducing the reflectivity and increasing the light transmittance in the visible light range of 400-700 nm.
Example 3
Step S1: and (3) cleaning the double-sided polished sapphire substrate, attaching the double-sided polished sapphire substrate to a rotary cylindrical workpiece frame of sputtering coating equipment, vacuumizing to 1.5.0E-3Pa, starting ICP (inductively coupled plasma) cleaning the surface of the sapphire substrate, removing miscellaneous gases, moisture adhesion and organic pollutant residues on the surface of the sapphire substrate, and enhancing the surface activity of the sapphire substrate. Then Argon Ar (Argon) 100sccm and oxygen O are introduced 2 200sccm, and cleaning for 120S under ICP power of 2 KW.
Step S2: sputtering a silicon target and plating a SiON film layer. The respective SiON film layers (or Si) of the hard anti-reflection film shown in fig. 8 were plated according to SiON film layer plating parameters shown in table 1 x O y N z A layer). Ar gas with the total amount of 55/65/80 of 200sccm is introduced into the upper, middle and lower targets of each pair of targets at each silicon target, and N2 and O2 with different flow rates are controlled to participate in the reaction at an ICP source according to the table 1 to generate Si with different refractive indexes and film layer setting sequences as shown in figure 8 x O y N z The antireflective films were constructed in which, in the film layer arrangement sequence, siON films of different grades were plated according to the corresponding film layer processing conditions in the table above, the thickness of each film layer being referred to in fig. 8. Plating out Si with different thickness and refractive index according with design requirement x O y N z And stacking the film layers, and plating the film layers for 800 seconds to finish 7 film layers with the total thickness of 518 nm.
According to the measurement, the values of the nano hardness of the hard anti-reflection film adopting the SiON film layer setting sequence when the nano indentation instrument is adopted are shown in the following table:
table 4 table of hardness test of hard anti-reflection film in example 3
Therefore, the plated film layer has higher surface hardness, and meanwhile, the high transmittance and low reflection of the plated film layer are greatly improved relative to the blue stone substrate material.
Referring further to FIG. 9, the spectral curve is measured by a spectrophotometer, and the hard anti-reflection film has the functions of reducing the reflectivity and increasing the light transmittance in the visible light range of 400-700 nm.
The hard anti-reflection film and the preparation method thereof are implemented, a silicon target is sputtered on a substrate, and N is controlled 2 And O 2 Generates Si with different atomic numbers of Si, O and N in stacked arrangement x O y N z Layers such that each Si x O y N z The refractive index of the layer is changed, and the N atoms are introduced so that Si x O y N z The hardness of the layer is obviously higher than that of SiO 2 Thereby improving the surface hardness of the anti-reflection film; o atom introduction, possible for Si x O y N z The refractive index of the layer is adjusted by setting Si with different layers, thicknesses and atomic numbers x O y N z A layer, finally making the refractive index of the anti-reflection film be between SiO 2 And Si (Si) 3 N 4 The reflectivity of the anti-reflection film is reduced by any value, the use requirement of the anti-reflection film is met, and meanwhile, the anti-reflection film is prevented from being scratched to cause damage, so that the service life of the anti-reflection film is prolonged.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A method for preparing a hard anti-reflection film, which is characterized by comprising the following steps:
selecting and cleaning a substrate;
sputtering a silicon target by controlling N 2 And O 2 Plating Si with different refractive index on substrate x O y N z Forming an anti-reflection film by the layer, wherein x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4; and Si of the surface layer of the antireflection film x O y N z The N atomic number y of the layer is non-zero.
2. The method of claim 1, wherein the substrate is made of glass or sapphire or plastic material.
3. The method of claim 2, wherein the anti-reflective film comprises Si of different refractive indices alternately stacked x O y N z 。
4. The method of claim 2, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
5. The method of claim 3 or 4, wherein the antireflective film has a thickness of 200-3000nm.
6. The method of claim 5, wherein the substrate is a glass substrate, and the anti-reflection film on the glass substrate has a light transmittance of more than 91% and a reflectance of less than 8% in the visible light range of 400-700 nm; the nanometer hardness of the anti-reflection film is more than 1200HV under the pressing depth of 100-500 nm.
7. The method of claim 5, wherein the substrate is a glass substrate, and the anti-reflection film on the glass substrate has a light transmittance of more than 90% and a reflectance of less than 8% in the visible light range of 400-700 nm; the surface hardness of the anti-reflection film is characterized by hardness through a nano indentation instrument, and the nano hardness is more than 1200HV under the indentation depth of 100-500 nm.
8. A hard anti-reflection film prepared by the method of claim 1, which comprises a substrate and an anti-reflection film stacked on the substrate, wherein the anti-reflection film comprises a plurality of Si x O y N z Layers of each of the Si x O y N z The layers are stacked on the substrate in a mode of alternately arranging the refractive index, x is a value between 1 and 3, y is a value between 0 and 2, and z is a value between 0 and 4; and Si of the surface layer of the antireflection film x O y N z The N atomic number y of the layer is non-zero.
9. The hard anti-reflection film according to claim 8, wherein the substrate is made of glass or sapphire or plastic material; each layer of the Si x O y N z The layers are plated on the substrate layer by layer in a sputtering coating mode and are sequentially stacked to form the high-hardness anti-reflection film.
10. The hard anti-reflection film according to claim 9, wherein the anti-reflection film comprises alternately stacked SiO 2 And Si (Si) 3 N 4 Or SiON film layers with different refractive indexes and different N and O contents, si x O y N z Is between the refractive index of SiO 2 Refractive index and Si of (2) 3 N 4 Is a refractive index of the optical element.
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| CN116559984A (en) * | 2023-05-06 | 2023-08-08 | 佛山纳诺特科技有限公司 | Inorganic wear-resistant homogeneous refractive index change antireflection film and preparation method and application thereof |
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| CN116559984A (en) * | 2023-05-06 | 2023-08-08 | 佛山纳诺特科技有限公司 | Inorganic wear-resistant homogeneous refractive index change antireflection film and preparation method and application thereof |
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