CN116014038A - Crystal film with distributed gradient for mass transfer - Google Patents

Abstract

The invention discloses a crystal film with distributed gradient for mass transfer, which mainly comprises a vacuum sucker, a through hole substrate, a first bonding layer, an elastic layer, a second bonding layer, a laser, a pneumatic device, a chip, solder paste/conductive adhesive and a receiving substrate. The invention uses the first adhesive layer with adjustable viscosity to adhere to the through hole substrate, uses the second adhesive layer with weaker viscosity to adhere to the chip, uses the low-energy laser to reduce the viscosity of the first adhesive layer, and uses the gas to drive the elastic layer to generate physical bubbling, thus completing the transfer of the LED chip. In the chip transferring process, the acting force is mild and controllable, no strong energy laser participates, no heat effect is generated, no surplus is generated, and the chip is not damaged. The distributed gradient limits the expansion of the bubble diameter, reduces the influence on adjacent non-working position chips when the chips are transferred, increases the height-diameter ratio of the bubbles, improves the transfer distance and the transfer rate, and can cope with more complex working conditions.

Description

Crystal film with distributed gradient for mass transfer

Technical Field

The invention relates to a micro light emitting diode mass transfer technology, in particular to a crystal film with a distributed gradient for mass transfer.

Background

Vision is the main channel for human to acquire information, and researches show that nearly 2/3 of effective information is efficiently and high-quality transmitted through display technology. The electronic display screen is used as a realization carrier of display technology and supports the development of modern information society. Electronic displays have undergone Cathode Ray Tube (CRT) displays, liquid crystal displays (Liquid crystal display, LCD), organic LEDs (OLED), mini/Micro LED screens, and are now continuously advancing innovations. CRT displays open the way of display technology, and have more meaning to make display devices enter into the public field of view, but they have the disadvantages of high power consumption, large radiation and large volume, and are difficult to meet the display requirements, and are gradually eliminated by the market. The LCD display has been developed for 50 years to be one of the mainstream display screens once it is being promoted to rapidly occupy the market because of its advantages of light weight, low cost, high resolution, etc. Compared with an LCD display screen, the OLED display screen has the advantages that the response speed and the contrast ratio are further improved due to the self-luminous characteristic of the OLED display screen, but the OLED display screen is influenced by the material characteristic, and the luminous efficiency is reduced, the color is not pure and even the phenomenon of screen burning occurs along with the accumulation of working time. The Mini/Micro LED display screen is arranged on the circuit substrate through a high-density array of micron-sized chips, achieves higher pixel density far exceeding the resolution limit of human eyes, has incomparable advantages of LCD and OLED in the aspects of stability, luminous efficiency, contrast ratio, power consumption, response speed and the like, is known as the ultimate target of display technology, and is the development direction of the next-generation mainstream display technology.

The manufacturing process of the Mini/Micro LED display screen needs to transfer tens of thousands or even tens of millions of chips from a source substrate to a target substrate, and the process is called mass transfer. The efficiency and accuracy of mass transfer determine the cost of manufacturing the display screen and the display effect, and for this reason, a great deal of research has been conducted in the industry. At present, the main flow mass transfer method mainly comprises an elastic seal, fluid self-assembly, accurate pick-up release and laser release. The elastic seal transfer technology finishes the chip pick-up and release actions by controlling the adhesion force between the seal and the chip, the scheme requires accurate control of the adhesion force at each stage, and the seal must have extremely flat surface and higher control difficulty. The fluid self-assembly technology requires special treatment of the structures of the chip and the target substrate, placing the substrate and the chip in solution, and transferring the chip into a capture well of the target substrate by using fluid force and chip gravity. The number of capturing wells in the initial vacancy state in the process is large, the transfer speed is high, but as the transfer process is carried out, the number of capturing wells in the initial vacancy state is reduced, the transfer speed is low, chips collide with each other in the solution, and the yield is reduced. The precise pick-up release is divided into electrostatic force, electromagnetic force, swing arm and needling type according to different acting forces. The electrostatic force and electromagnetic force transfer mode utilizes the electrostatic or magnetic grabbing chip on the transfer head, and the electrostatic or magnetic is removed after the transfer head reaches the designated position, so that the chip release is completed, and the two methods both need special treatment on the chip, thereby increasing the chip damage risk. Swing arm formula and acupuncture formula are the transfer mode of current maturity, and the former adopts thimble and suction nozzle to snatch the chip, places the target position with the chip through the swing arm, and its transfer rate is slow, and the precision is low, easily damages the chip, and there is physical limit suction nozzle diameter, is difficult to transfer smaller size chip, and the latter then cancels the swing arm, directly pierces target substrate with the chip through the thimble, has improved transfer rate, but does not solve the problem such as chip damage and physical limit. The laser release technology skips the links of picking up and releasing, irradiates the stripping layer by laser, and makes chemical reaction take place on the surface of the stripping layer, so that the chip is peeled off to the receiving substrate. The process relies on the release layer to generate strong and violent explosion, the control difficulty of acting force is great, the risk of damaging the chip exists, and the generation of surplus substances is often accompanied.

The LED chip transfer method and light source board described in patent 202010828204.X employs laser ablation of the release layer to reduce the adhesion of the release layer to the adhesive layer, allowing the LED chip to peel off the receiving substrate. The scheme simply relies on the laser energy to transfer the chip, causes the chip to damage easily, and the bonding layer can also melt under the irradiation of laser to form a surplus, which affects the display effect.

The method and the device for transferring huge quantities of micro-LEDs based on high-speed scanning laser transfer printing, disclosed in the patent 202110019640.7, utilize air bubbles generated between a substrate and a stripping layer by femtosecond laser to push the LED chips to a receiving substrate, and the scheme avoids direct stripping layer ablation, but the high-pressure gas force excited by strong laser energy is unstable in size and direction, the generated air bubbles are inconsistent in shape, the transferring precision is low, and excessive substances are generated after the air bubbles are exploded, so that the working environment is polluted.

The pneumatic huge amount transfer device of Mini/Micro LED chip of the application patent 202210631736.3 adopts an air tap to generate controllable air bubbles on the elastic membrane and the through hole bottom plate, pushes the chip to transfer to the receiving substrate, avoids the defects of instability of thermochemical action of laser huge amount transfer and easy damage of the chip, but has no gradient of the viscosity of the transfer membrane and the through hole bottom plate. When the adhesiveness of the transfer film is smaller, the adhesive force between the upper surface of the transfer film and the through hole bottom plate is insufficient, and the transfer film and the through hole bottom plate are easily separated under the action of air pressure, so that the diameter of bubbles is overlarge, and other chips are affected; when the adhesiveness of the transfer film is large, the adhesive force between the upper surface of the transfer film and the through hole bottom plate is too large, the transfer film and the through hole bottom plate are difficult to separate under the action of air pressure, the height of air bubbles is too small, a chip cannot contact a target substrate, and the transfer rate is too low.

In view of this, the present invention has been made.

Disclosure of Invention

The invention aims to provide a crystal film for mass transfer with a distributed gradient so as to solve the technical problems in the prior art.

The invention aims at realizing the following technical scheme:

the invention relates to a crystal film with a distributed gradient for mass transfer, which comprises a vacuum chuck 1, a through hole substrate 2, a first bonding layer 3, an elastic layer 4, a second bonding layer 5, a laser 6, a pneumatic device 7, a chip 8, solder paste/conductive adhesive 9 and a receiving substrate 10;

the vacuum chuck 1 is located above the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located below the vacuum chuck 1, the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located below the vacuum chuck 1 from top to bottom, the through hole substrate 2 is located below the vacuum chuck 1 and is fixed on the vacuum chuck 1 through vacuum adsorption force, the first bonding layer 3 is adhered to the lower surface of the through hole substrate 2, the elastic layer 4 is adhered to the lower surface of the first bonding layer 3 through the adhesion of the first bonding layer 3, the second bonding layer 5 is located below the elastic layer 4 and is adhered to the lower surface of the elastic layer 4 through self adhesion, the laser 6 is located inside the vacuum chuck 1 and above the through hole substrate 2, the pneumatic device 7 is located above the through hole substrate 2 and on the right side of the laser 6, the chip 8 is arranged below the second bonding layer 5 in an array, the solder paste/conductive paste 9 is located below the chip 8 and is adhered to the lower surface of the second bonding layer 5 through the adhesion of the second bonding layer 5, the solder paste/conductive paste 9 is located below the chip 8 and the receiving surface 10 of the chip/the solder paste 9.

Compared with the prior art, the crystal film for huge transfer with distributed gradient provided by the invention can reduce the viscosity of a working position, improve the height of bubbles, increase the transfer distance, meet more complex working conditions, simultaneously maintain the strong viscosity of a non-working position, limit the diameter of bubbles, avoid affecting adjacent chips, and realize the accurate, rapid and nondestructive transfer of LED chips.

Drawings

FIG. 1 is a schematic diagram of a distributed gradient bulk transfer crystalline film structure according to an embodiment of the present invention;

FIG. 2 is a schematic view showing a process of placing a carrier film on a spin-coating stage according to an embodiment of the present invention;

FIG. 3 is a schematic diagram illustrating a first adhesive layer manufacturing process according to an embodiment of the invention;

FIG. 4 is a schematic diagram of a first adhesive layer according to an embodiment of the present invention;

FIG. 5 is a schematic diagram illustrating a process for fabricating an elastic layer according to an embodiment of the invention;

FIG. 6 is a schematic diagram of an elastic layer according to an embodiment of the invention;

FIG. 7 is a schematic diagram of a second adhesive layer according to an embodiment of the invention;

FIG. 8 is a schematic diagram of a second adhesive layer according to an embodiment of the present invention;

FIG. 9 is a schematic diagram of a process of covering a protective film according to an embodiment of the present invention;

FIG. 10 is a schematic view showing the cutting of the first adhesive layer, the elastic layer, the second adhesive layer, the base film and the protective film according to the embodiment of the present invention;

FIG. 11 is a schematic diagram illustrating the adhesion of a first adhesive layer to a through-hole substrate according to an embodiment of the present invention;

fig. 12 is a schematic diagram of a transfer method according to an embodiment of the invention.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it will be apparent that the described embodiments are only some embodiments of the invention, but not all embodiments, which do not constitute limitations of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.

The terms that may be used herein will first be described as follows:

the term "and/or" is intended to mean that either or both may be implemented, e.g., X and/or Y are intended to include both the cases of "X" or "Y" and the cases of "X and Y".

The terms "comprises," "comprising," "includes," "including," "has," "having" or other similar referents are to be construed to cover a non-exclusive inclusion. For example: including a particular feature (e.g., a starting material, component, ingredient, carrier, formulation, material, dimension, part, means, mechanism, apparatus, step, procedure, method, reaction condition, processing condition, parameter, algorithm, signal, data, product or article of manufacture, etc.), should be construed as including not only a particular feature but also other features known in the art that are not explicitly recited.

The term "consisting of … …" is meant to exclude any technical feature element not explicitly listed. If such term is used in a claim, the term will cause the claim to be closed, such that it does not include technical features other than those specifically listed, except for conventional impurities associated therewith. If the term is intended to appear in only a clause of a claim, it is intended to limit only the elements explicitly recited in that clause, and the elements recited in other clauses are not excluded from the overall claim.

Unless specifically stated or limited otherwise, the terms "mounted," "connected," "secured," and the like should be construed broadly to include, for example: the connecting device can be fixedly connected, detachably connected or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms herein above will be understood by those of ordinary skill in the art as the case may be.

The terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. refer to an orientation or positional relationship based on that shown in the drawings, merely for ease of description and to simplify the description, and do not explicitly or implicitly indicate that the apparatus or element in question must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present disclosure.

What is not described in detail in the embodiments of the present invention belongs to the prior art known to those skilled in the art. The specific conditions are not noted in the examples of the present invention and are carried out according to the conditions conventional in the art or suggested by the manufacturer. The reagents or apparatus used in the examples of the present invention were conventional products commercially available without the manufacturer's knowledge.

The invention relates to a crystal film with a distributed gradient for mass transfer, which comprises a vacuum chuck 1, a through hole substrate 2, a first bonding layer 3, an elastic layer 4, a second bonding layer 5, a laser 6, a pneumatic device 7, a chip 8, solder paste/conductive adhesive 9 and a receiving substrate 10;

the vacuum chuck 1 is located above the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located below the vacuum chuck 1, the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located below the vacuum chuck 1 from top to bottom, the through hole substrate 2 is located below the vacuum chuck 1 and is fixed on the vacuum chuck 1 through vacuum adsorption force, the first bonding layer 3 is adhered to the lower surface of the through hole substrate 2, the elastic layer 4 is adhered to the lower surface of the first bonding layer 3 through the adhesion of the first bonding layer 3, the second bonding layer 5 is located below the elastic layer 4 and is adhered to the lower surface of the elastic layer 4 through self adhesion, the laser 6 is located inside the vacuum chuck 1 and above the through hole substrate 2, the pneumatic device 7 is located above the through hole substrate 2 and on the right side of the laser 6, the chip 8 is arranged below the second bonding layer 5 in an array, the solder paste/conductive paste 9 is located below the chip 8 and is adhered to the lower surface of the second bonding layer 5 through the adhesion of the second bonding layer 5, the solder paste/conductive paste 9 is located below the chip 8 and the receiving surface 10 of the chip/the solder paste 9.

The vacuum sucker 1 is connected with external negative pressure, and the vacuum degree is 50kPa-120kPa.

The through hole substrate 2 is made of one of quartz, boron silicon, sapphire, alumina, zirconia, silicon carbide, boron carbide and aluminum carbide, and the thickness of the through hole substrate is 0.1mm-3mm.

The through-hole substrate 2 has oriented vertical micro holes with a diameter of 0.1 μm to 50 μm.

The first bonding layer 3 is one of PI, UV adhesive and thermal adhesive reducing material with the capability of reducing or eliminating the viscosity after laser irradiation, and the adhesive force is 0.5N/25mm-10N/25mm.

The elastic layer 4 is one of PDMS, TPE, TPEE, TPU, PU and TPR materials with good restorability.

The second bonding layer 5 is one of an organic silica gel adhesive, an epoxy resin adhesive and a polyurethane adhesive, and the adhesive force is 0.01N/25mm-2N/25mm.

The through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are combined into a transfer crystal film, and the manufacturing flow is as follows:

s101: fixing the base film 11 on a spin coating table 12;

s102: spin-coating the first adhesive layer 3 on the upper surface of the base film 11;

s103: drying and curing the first bonding layer 3;

s104: spin-coating an elastic layer 4 on the upper surface of the first adhesive layer 3;

s105: drying and solidifying the elastic layer 4;

s106: spin-coating a second adhesive layer 5 on the upper surface of the elastic layer 4;

s107: drying and curing the second bonding layer 5;

s108: attaching the protective film 13 to the upper surface of the second adhesive layer 5;

s109: removing the uneven edge along the cutting line;

s110: tearing off the protective film 13 and attaching the first adhesive layer 3 to the through-hole substrate 2;

s111: and placing the transferred crystal film into a vacuum container, vacuumizing and discharging bubbles between the through hole substrate 2 and the first bonding layer 3, so as to realize close contact and ensure flatness.

The wavelength of the laser 6 is 300nm-1200nm, the power is 0.1W-20W, and the irradiation area is 0.0025mm2-0.5mm2.

The working air pressure of the pneumatic device 7 is 0.1MPa-2MPa, and the working frequency is 10Hz-500Hz.

The principle of the scheme is as follows:

as shown in FIG. 1, when a wafer film for huge transfer with distributed gradient works, a laser is used for carrying out regional irradiation on a working position, so that the viscosity of a first bonding layer corresponding to the working position is weakened or vanished, the laser stops irradiating and moves to the next working position, a pneumatic device moves to the working position irradiated by the laser, high-pressure gas is blown into a through hole substrate with a tiny through hole by starting the pneumatic device, so that bubbles are generated in the first bonding layer, an elastic layer and a second bonding layer, a chip positioned on the lower surface of the second bonding layer is pushed to move towards a receiving substrate, when the chip contacts solder paste/conductive paste on the receiving substrate, the pneumatic device is closed, the air pressure in the tiny through hole of the through hole substrate is reduced, the deformed elastic layer drives the first bonding layer and the second bonding layer to restore the original state under the driving of elastic potential energy, and the viscosity of the upper surface of the chip is smaller than that of the lower surface of the chip and the solder paste/conductive paste, and the chip is peeled off from the second bonding layer to the receiving substrate, and the transfer of a single chip is completed.

Compared with the prior art, the invention has the advantages that:

the invention uses the first adhesive layer with adjustable viscosity to adhere to the through hole substrate, uses the second adhesive layer with weaker viscosity to adhere to the chip, uses the low energy laser to reduce the viscosity of the first adhesive layer, and the gas drives the elastic layer to generate physical bubbling to finish the transfer of the LED chip, compared with the laser release mode, the invention has the advantages of mild and controllable acting force, no participation of strong energy laser, no heat effect, no generation of surplus and no damage to the chip in the chip transfer process; compared with a gradient-free pneumatic transfer mode, the adhesive can be regulated and controlled according to a designated position, the adhesive of a working position is reduced, meanwhile, the adhesive of a non-working position is kept, the adhesive force of a first adhesive layer corresponding to the working position and a through hole substrate is reduced, the first adhesive layer is more easily separated from the through hole substrate under the action of air pressure, the height of bubbles is improved, the transfer motion stroke is increased, meanwhile, the strong adhesive of the non-working position is kept, the diameter of the bubbles is limited, the influence on adjacent non-working position chips when the chips are transferred is reduced, the height-diameter ratio of the bubbles is optimized, the transfer distance and the transfer rate are improved, and more complex working conditions can be handled.

In summary, the crystal film for mass transfer with distributed gradient in the embodiment of the invention uses the first adhesive layer with adjustable viscosity to adhere to the through hole substrate, uses the second adhesive layer with weaker viscosity to adhere to the chip, uses low-energy laser to reduce the viscosity of the first adhesive layer, and uses the gas to drive the elastic layer to generate physical bubbling, thus completing the transfer of the LED chip. In the chip transferring process, the acting force is mild and controllable, no strong energy laser participates, no heat effect is generated, no surplus is generated, and the chip is not damaged. The distributed gradient limits the expansion of the bubble diameter, reduces the influence on adjacent non-working position chips when the chips are transferred, increases the height-diameter ratio of the bubbles, improves the transfer distance and the transfer rate, and can cope with more complex working conditions.

The viscosity can be regulated and controlled in a directional manner according to the position, the deformation quantity is controllable, no heat is generated, and the adhesive can be applied to the transfer of the LED chip to the target substrate with high efficiency, high precision, no pollution and no damage.

In order to more clearly demonstrate the technical scheme and the technical effects provided by the invention, the following detailed description of the embodiments of the invention is given by way of specific examples.

Example 1

As shown in fig. 1, the wafer film for mass transfer with distributed gradient consists of a vacuum chuck 1, a through hole substrate 2, a first bonding layer 3, an elastic layer 4, a second bonding layer 5, a laser 6, a pneumatic device 7, a chip 8, solder paste/conductive adhesive 9 and a receiving substrate 10;

the vacuum chuck 1 is located above the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located below the vacuum chuck 1, the through hole substrate 2, the first bonding layer 3, the elastic layer 4 and the second bonding layer 5 are located above the through hole substrate 2 from top to bottom, the through hole substrate 2 is located below the vacuum chuck 1 and is fixed on the vacuum chuck 1 through vacuum adsorption force, the first bonding layer 3 is adhered to the lower surface of the through hole substrate 2, the elastic layer 4 is adhered to the lower surface of the first bonding layer 3 through the adhesion of the first bonding layer 3, the second bonding layer 5 is located below the elastic layer 4 and is adhered to the lower surface of the elastic layer 4 through self adhesion, the laser 6 is located inside the vacuum chuck 1 and above the through hole substrate 2, the pneumatic device 7 is located above the through hole substrate 2 and on the right side of the laser 6, the chip 8 is arranged below the second bonding layer 5 in an array, the solder paste/conductive paste 9 is located below the chip 8 and on the lower surface of the receiving substrate 10, and the solder paste/conductive paste 9 is located below the receiving substrate 10. The vacuum sucker 1 is connected with external negative pressure, and the vacuum degree is 50kPa-120kPa. The through-hole substrate 2 is one of quartz, borosilicate, sapphire, alumina, zirconia, silicon carbide, boron carbide and aluminum carbide, has a thickness of 0.1mm-3mm, and has oriented vertical micropores with a diameter of 0.1 μm-50 μm. The first adhesive layer 3 is one of PI, UV adhesive and thermal adhesive reducing material having an ability to decrease or disappear the tackiness after laser irradiation, and has an adhesive force of 0.5N/25mm to 10N/25mm. The elastic layer 4 is one of PDMS, TPE, TPEE, TPU, PU and TPR materials with good recoverable deformability. The second adhesive layer 5 is one of an organic silica gel adhesive, an epoxy resin adhesive and a polyurethane adhesive, and the adhesive force is 0.01N/25mm-2N/25mm.

Fig. 2 is a schematic diagram of a process of placing a base film 11 on a spin-coating table 12 according to the technical solution of the present invention, placing the base film 11 in the center of the spin-coating table 12, and starting the adsorption fixing function of the spin-coating table 12 to ensure that the base film 11 does not move when rotating.

Fig. 3 is a schematic diagram of a process for manufacturing the first adhesive layer 3 according to the technical solution of the present invention, the spin coating table 12 is opened, the spin coating table is turned on to a low speed, the first adhesive layer 3 is rapidly dropped onto the upper surface of the base film 11, and after the dropping of the adhesive is completed, the spin coating table 12 is turned on to a high speed, so that the first adhesive layer 3 is uniformly distributed on the upper surface of the base film 11.

Fig. 4 is a schematic diagram showing the first adhesive layer 3 according to the technical solution of the present invention after the first adhesive layer 3 is manufactured, the first adhesive layer 3 is uniformly coated on the upper surface of the base film 11, and the first adhesive layer 3 is cured.

Fig. 5 is a schematic diagram of a process for manufacturing the elastic layer 4 according to the technical solution of the present invention, the spin coating table 12 is opened, the spin coating table is turned on to a low speed, the elastic layer 4 is rapidly dropped onto the upper surface of the first adhesive layer 3, and after the adhesive dropping is finished, the spin coating table 12 is turned on to a high speed, so that the elastic layer 4 is uniformly distributed on the upper surface of the first adhesive layer 3.

Fig. 6 is a schematic diagram of the elastic layer 4 according to the technical solution of the present invention after the elastic layer 4 is manufactured, the elastic layer 4 is uniformly coated on the upper surface of the first adhesive layer 3, and the elastic layer 4 is waiting to be cured.

Fig. 7 is a schematic diagram of a process for manufacturing the second adhesive layer 5 according to the technical solution of the present invention, the spin coating table 12 is opened, the spin coating table is turned on to a low speed, the second adhesive layer 5 is rapidly dropped onto the upper surface of the elastic layer 4, and after the dropping of the adhesive is completed, the spin coating table 12 is turned on to a high speed, so that the second adhesive layer 5 is uniformly distributed on the upper surface of the elastic layer 4.

Fig. 8 is a schematic diagram of the second adhesive layer 5 according to the technical solution of the present invention after the second adhesive layer 5 is manufactured, the second adhesive layer 5 is uniformly coated on the upper surface of the elastic layer 4, and the second adhesive layer 5 is cured.

Fig. 9 is a schematic diagram of a process of covering the protective film 13 according to the technical solution of the present invention, wherein the protective film 13 is covered to the second adhesive layer 5 to protect it from contamination.

Fig. 10 is a schematic view of cutting the first adhesive layer 3, the elastic layer 4, the second adhesive layer 5, the base film 11, and the protective film 13 according to the technical solution of the present invention, defining a cutting line according to the size of the through-hole substrate 2, removing edge portions of the first adhesive layer 3, the elastic layer 4, the second adhesive layer 5, the base film 11, and the protective film 13 along the cutting line, and dividing them into the same size as the through-hole substrate 2.

Fig. 11 is a schematic diagram showing the adhesion between the first adhesive layer 3 and the through hole substrate 2 according to the technical solution of the present invention, tearing off the protective film 13 above the first adhesive layer 3, aligning the edge of the first adhesive layer 3 with the edge of the through hole substrate 2, applying a certain pressure to perform adhesion, then placing into a vacuum container, vacuumizing to discharge the bubbles between the through hole substrate 2 and the first adhesive layer 3, so as to achieve close contact and ensure flatness.

Fig. 12 is a schematic diagram of a transfer method in the technical solution of the present invention, during operation, a laser 6 is used to perform regional irradiation on a working position of a chip 8, so that the viscosity of a first adhesive layer 3 corresponding to the working position of the chip 8 is weakened or vanished, the laser 6 stops irradiation and moves to the next working position of the chip 8, a pneumatic device 7 moves to the working position of the chip 8 irradiated by laser, high-pressure gas is blown into a through hole substrate 2 with a micro through hole by starting the pneumatic device 7, so that bubbles are generated by the first adhesive layer 3, an elastic layer 4 and a second adhesive layer 5, the chip 8 positioned on the lower surface of the second adhesive layer 3 is pushed to move to a receiving substrate 10, when the chip 8 contacts with a solder paste/conductive adhesive 9 on the receiving substrate 10, the pneumatic device 7 is closed, the air pressure in the micro through hole of the through hole substrate 2 is reduced, the deformed elastic layer 4 drives the first adhesive layer 3 and the second adhesive layer 5 to restore the original state under the driving of the elastic potential energy, and the chip 8 is lower than the viscosity of the solder paste/conductive adhesive 9 on the lower surface of the chip 8, and the chip 8 is transferred from the second adhesive layer 5 to the receiving substrate 10, and all the operations are completed in a continuous manner after the chip 8 is transferred by the pneumatic device 8, and the operation is completed.

The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims. The information disclosed in the background section herein is only for enhancement of understanding of the general background of the invention and is not to be taken as an admission or any form of suggestion that this information forms the prior art already known to those of ordinary skill in the art.

Claims (10)

1. The utility model provides a crystal film is used in huge transfer with distributed gradient, includes vacuum chuck (1), through-hole base plate (2), first tie coat (3), elastic layer (4), second tie coat (5), laser instrument (6), pneumatic ware (7), chip (8), solder paste/conducting resin (9) and receiving base plate (10), its characterized in that:

the vacuum chuck (1) is positioned above the through hole substrate (2), the first bonding layer (3), the elastic layer (4) and the second bonding layer (5) are positioned below the vacuum chuck (1), the through hole substrate (2), the first bonding layer (3), the elastic layer (4) and the second bonding layer (5) are sequentially positioned from top to bottom, the through hole substrate (2) is positioned below the vacuum chuck (1) and fixed on the vacuum chuck (1) through vacuum adsorption force, the first bonding layer (3) is adhered to the lower surface of the through hole substrate (2), the elastic layer (4) is adhered to the lower surface of the first bonding layer (3) through the adhesion of the first bonding layer (3), the second bonding layer (5) is positioned below the elastic layer (4) and adhered to the lower surface of the elastic layer (4) through self adhesion, the laser (6) is positioned on the inner side of the vacuum chuck (1) and the upper side of the through hole substrate (2), the pneumatic device (7) is positioned above the through hole substrate (2) and on the right side of the laser device (6), the chip (8) is arranged on the lower surface of the second bonding layer (5) through the adhesion of the second bonding layer (5), the solder paste/conductive adhesive (9) is positioned below the chip (8) and on the upper surface of the receiving substrate (10), and the receiving substrate (10) is positioned below the chip (8) and the solder paste/conductive adhesive (9).

2. The bulk transfer film with distributed gradient of claim 1, wherein: the vacuum sucker (1) is connected with external negative pressure, and the vacuum degree is 50kPa-120kPa.

3. The bulk transfer film with distributed gradient of claim 1, wherein: the through hole substrate (2) is made of one of quartz, boron silicon, sapphire, alumina, zirconia, silicon carbide, boron carbide and aluminum carbide, and the thickness of the through hole substrate is 0.1mm-3mm.

4. The bulk transfer film with distributed gradient of claim 1, wherein: the through-hole substrate (2) has oriented vertical micro holes with a diameter of 0.1-50 μm.

5. The bulk transfer film with distributed gradient of claim 1, wherein: the first bonding layer (3) is one of PI, UV adhesive and thermal-reduction adhesive materials with the capability of reducing or eliminating the viscosity after laser irradiation, and the adhesive force is 0.5N/25mm-10N/25mm.

6. The bulk transfer film with distributed gradient of claim 1, wherein: the elastic layer (4) is one of PDMS, TPE, TPEE, TPU, PU and TPR materials with good restorability to deformation.

7. The bulk transfer film with distributed gradient of claim 1, wherein: the second bonding layer (5) is one of an organic silica gel adhesive, an epoxy resin adhesive and a polyurethane adhesive, and the adhesive force is 0.01N/25mm-2N/25mm.

8. The bulk transfer film with distributed gradient of claim 1, wherein: the wavelength of the laser (6) is 300-1200 nm, the power is 0.1-20W, and the irradiation area is 0.0025mm2-0.5mm2.

9. The bulk transfer film with distributed gradient of claim 1, wherein: the working air pressure of the pneumatic device (7) is 0.1-2 MPa, and the working frequency is 10-500 Hz.

10. The crystalline film for bulk transfer with distributed gradient according to any one of claims 1 to 9, wherein: the through hole substrate (2), the first bonding layer (3), the elastic layer (4) and the second bonding layer (5) are combined to form a transfer crystal film, and the manufacturing process is as follows:

s101: fixing a bottom film (11) on a spin coating table (12);

s102: spin-coating a first adhesive layer (3) on the upper surface of a base film (11);

s103: drying and solidifying the first bonding layer (3);

s104: spin-coating an elastic layer (4) on the upper surface of the first bonding layer (3);

s105: drying and solidifying the elastic layer (4);

s106: spin-coating a second adhesive layer (5) on the upper surface of the elastic layer (4);

s107: drying and solidifying the second bonding layer (5);

s108: attaching a protective film (13) to the upper surface of the second adhesive layer (5);

s109: removing the uneven edge along the cutting line;

s110: tearing off the protective film (13) and attaching the first adhesive layer (3) to the through-hole substrate (2);

s111: and placing the transferred crystal film into a vacuum container, vacuumizing and discharging bubbles between the through hole substrate (2) and the first bonding layer (3), so as to realize close contact and ensure flatness.

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