CN114709163A - Liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film and manufacturing method - Google Patents
Liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film and manufacturing method Download PDFInfo
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Abstract
The invention discloses a liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film and a manufacturing method thereof, wherein the liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film comprises a substrate, a medium storage grid, a liquid-gas dual-state medium, a sealant, an elastic layer and a bonding layer; by means of the characteristics that the liquid-gas binary medium is easy to heat up and has low boiling point and the viscosity of the bonding layer is obviously reduced after being heated, laser matched with the absorption spectrum of the liquid-gas binary medium penetrates through the substrate to irradiate the liquid-gas binary medium to gasify the liquid-gas binary medium to generate bubbles, so that the chip is pushed to be transferred to a target substrate, and the massive transfer of the chip is realized. Compared with the existing heat release and ablation release, the method can realize the reutilization of the crystal film and the high-precision mass transfer of the chip under the conditions of friendly environmental temperature and no pollutant generation.
Description
Technical Field
The invention relates to a mass transfer technology of a Micro light-emitting diode, in particular to a crystal film for mass transfer of a liquid-gas dual-state Mini/Micro LED chip and a manufacturing method thereof.
Background
The vision is the main channel for human to obtain information, and researches show that the information obtained by various sense organs comprises 60 percent of vision, 20 percent of hearing, 15 percent of touch, 3 percent of taste and 2 percent of smell, wherein the effective information of nearly 2/3 is transmitted efficiently and with high quality through a display technology. The birth of the electronic display screen changes the mode of bearing and transmitting visual information and supports the development of the modern information society. From simple traffic light and nixie tube display to complex image and television broadcasting, to Virtual Reality (VR) and Augmented Reality (AR), the display permeates all aspects of social production and people's life. The display screen with high resolution, high brightness, high contrast, no splicing gap and quick response is a key pivot for future informatization and intelligent information transfer, and plays an indispensable role in life.
Electronic display screens have been developed and developed through Cathode Ray Tube (CRT) displays, Liquid Crystal Displays (LCD), Organic Light Emitting Diode (OLED) displays, and Mini/Micro LED displays. CRT displays gradually exit the market due to their large size and high power consumption, which makes it difficult to meet the display requirements. LCDs have become the mainstream display screens at present due to their advantages of low cost, high resolution, high contrast, and long lifetime. Compared with an LCD (liquid crystal display), the OLED display screen can self-illuminate, the response speed is improved, the thickness of the display screen is reduced, but the OLED display screen is influenced by material characteristics, the luminous efficiency is reduced, the service life is shortened along with the increase of time, even the phenomenon of screen burning can occur, and the performance of the OLED display screen is seriously influenced. The Mini/Micro LED realizes higher pixel density far beyond the human eye resolution limit by reducing the chip size and the chip spacing, has incomparable advantages of LCD and OLED in the aspects of contrast, response speed, power consumption, luminous efficiency, stability and the like, can be widely applied to various display fields such as small-size wearing, VR/AR, mobile phones, flat panels, TVs and the like, and is the development direction of the next generation of mainstream display technology. The rapid development of the Mini/Micro LED display technology is expected to solve the severe situation of the display industry and realize curve overtaking in the display field in China.
The chain length of the technological process for producing the Mini/Micro LED display panel is long and complex, and the technological process mainly comprises chip preparation, chip transfer and defect detection and repair, wherein a huge transfer link is a key step of the technological process chain. How to quickly and accurately transfer the micron-sized chip to the target position becomes the technical bottleneck of the whole manufacturing process, and is an important guarantee for the large-scale mass production of the Mini/Micro LED display screen. The bulk transfer solutions in the industry today are mainly flexible stamp micro-transfer techniques, fluidic self-assembly techniques, roller transfer techniques, laser selective release techniques, etc. The elastic stamp micro-transfer technology utilizes the adhesive force between the elastic stamp and the chip to pick up the chip from the source substrate, and the adhesive force between the elastic stamp and the chip is reduced and eliminated to enable the chip to fall off to the target substrate, so that the LED chip is transferred in a large amount. The transfer speed of the scheme is about 18kk/h, the yield can reach 99.99%, but the adhesion force of each stage needs to be accurately controlled, and the surface degree of the die is extremely flat, so that the transfer yield and precision are not influenced. The fluid self-assembly technology firstly disperses the chips in the fluid, and the Mini/Micro LED chip particles are captured to the corresponding wells of the target substrate by controlling the flow of the fluid and utilizing the flow force and the gravity action of the fluid to complete chip transfer, wherein the transfer speed is about 50 kk/h. Because the target substrate needs to be processed in the transfer process, the technical difficulty is high, the electrical connection between the Mini/Micro LED chip and the corresponding well cannot be guaranteed, the chip can be damaged, and the yield cannot be guaranteed. The roller transfer technique requires transferring the chip onto a roller, rotating the roller, and transferring the Mini/Micro LED to a target substrate. The method has few production steps and higher production speed, can realize high-speed mass transfer, but cannot selectively transfer Mini/Micro LEDs, and has difficult guarantee of precision and reliability. The selective laser release technology skips the picking and releasing links, directly peels off and releases the Mini/Micro LED chip to the target substrate from the source substrate or the intermediate substrate, so that the transfer speed is increased to 100kk/h, the yield is increased by 99.999%, the selective laser release technology has the capacity of batch transfer and single-point repair, but the equipment cost is high.
The laser selective release technology is the most promising huge transfer scheme, and the key core component of the laser selective release technology is the LED chip transfer crystal film. The laser selective release technology can be divided into thermal release and ablation release according to the action mechanism when the laser irradiates and transfers the crystal film. In the former, a transfer crystal film absorbs laser energy to generate a chemical reaction, so that the adhesion between the transfer crystal film and a chip is reduced, and the transfer crystal film falls off to a target substrate by virtue of the self weight of the chip. The latter adopts laser ablation sacrificial layer to produce explosion gas and produce the impact force, realizes that the chip releases the transfer, but the chip whereabouts gesture is difficult to control in the explosion process, and the yields is not high, and explosion gas easily pollutes operational environment.
According to the transfer film and the application thereof disclosed in the Chinese patent 202011069063.4, the acrylic adhesive layer and the anti-adhesive layer are arranged on two sides of the base material, the LED chip is firmly adsorbed on the anti-adhesive layer in a normal state, the adhesive force between the LED chip and the anti-adhesive layer is reduced after anti-adhesive treatment, and the bulk transfer of the Mini/Micro LED chip below 50 microns is realized. But the viscosity reducing adhesive layer is uneven when being heated and decomposed, so that the adhesive force is uneven, the stress of the chip is uneven in the releasing process, the posture of the chip is not easy to control, and the chip transferring effect is reduced.
Chinese patent zl202010828204.x the LED chip transfer method and light source board, a lift-off layer is laminated on a transparent substrate, a bonding layer is covered on the lift-off layer, and laser irradiates the lift-off layer through the transparent substrate to ablate the lift-off substance, thereby driving the transparent substrate to separate from the bonding layer, and realizing LED chip transfer. However, the ablation process of the stripping layer is difficult to control, so that the defects of uneven chip falling, inaccurate position, pollution to the working environment and the like are easily caused, the crystal film cannot be reused, and the waste of crystal film materials is serious.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The invention aims to provide a liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film which is close to daily temperature, controllable in deformation and reusable, and a manufacturing method thereof, so as to solve the technical problems in the prior art. The transfer method can be used for transferring the Mini/Micro LED chip to a target substrate quickly, accurately, harmlessly and pollution-free, and greatly improves the transfer efficiency and transfer yield of the LED chip.
The purpose of the invention is realized by the following technical scheme:
the invention relates to a crystal film for bulk transfer of a liquid-gas dual-state Mini/Micro LED chip, which comprises a substrate, a medium storage grid, a liquid-gas dual-state medium, a sealant, an elastic layer and an adhesive layer;
the substrate is arranged above the medium storage grid, the liquid-gas two-state medium, the sealant, the elastic layer and the bonding layer, the medium storage grid, the liquid-gas two-state medium and the sealant are arranged below the substrate and above the elastic layer, the medium storage grid is laid on the lower surface of the substrate, the liquid-gas two-state medium is distributed in the medium storage grid, the sealant is arranged on the radial outer side of the medium storage grid and the liquid-gas two-state medium, the substrate, the sealant and the elastic layer form a closed space, the medium storage grid and the liquid-gas two-state medium are sealed in the closed space formed by the substrate, the sealant and the elastic layer, the bonding layer is arranged on the lower surface of the elastic layer, and the bonding layer is coated on the lower surface of the elastic layer through the self-adhesive force of the bonding layer.
The manufacturing method of the transfer crystal film comprises the following steps:
step 1: laying a layer of medium storage grid on the lower surface of the substrate; step 2: coating a circle of sealant around the media storage grid; and step 3: coating a bonding layer on the lower surface of the elastic layer; and 4, step 4: injecting a liquid-gas binary medium into the medium storage grid; and 5: covering the sealing adhesive and the medium storage layer with the elastic layer coated with the bonding layer, and sealing the liquid-gas binary medium; and 6: and putting the bonded crystal film for mass transfer of the liquid-gas dual-state Mini/Micro LED chip into a vacuum container for vacuumizing to realize that the liquid-gas dual-state medium is in close contact with the substrate and the elastic layer in a normal-temperature closed environment.
Compared with the prior art, the liquid-gas two-state Mini/Micro LED chip bulk transfer crystal film and the manufacturing method provided by the invention have the advantages that the liquid-gas two-state medium mode is adopted, and compared with the heat release mode, the defects that the viscosity of the crystal film is not uniform, the stress in the chip release process is not uniform, the posture of the chip is not easy to control due to the peeling of the chip by the dead weight, the working temperature is high and the like are overcome, and the high-precision transfer of the chip at the friendly environmental temperature is realized; compared with an ablation mode, the defects that the falling position of the chip is not easy to control, the yield is low, the working environment is polluted, the crystal film cannot be reused, the working temperature is high and the like in the ablation release process are overcome, and the crystal film is reused and the chip is transferred with high precision at the pollution-free and environment-friendly temperature.
Drawings
FIG. 1 is a schematic structural diagram of a bulk transfer crystal film of a liquid-gas binary Mini/Micro LED chip according to an embodiment of the present invention;
FIG. 2 is a schematic view of the structure of a substrate, a media storage grid, and a sealant in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of a wafer during a chip transfer process according to an embodiment of the invention;
fig. 4 is a schematic view of a manufacturing process of a crystalline film according to an embodiment of the invention.
Detailed Description
The technical scheme in the embodiment of the invention is clearly and completely described below by combining the attached drawings in the embodiment of the invention; it is to be understood that the described embodiments are merely exemplary of the invention, and are not intended to limit the invention to the particular forms disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The terms that may be used herein are first described as follows:
the term "and/or" means that either or both can be achieved, for example, X and/or Y means that both cases include "X" or "Y" as well as three cases including "X and Y".
The terms "comprising," "including," "containing," "having," or other similar terms of meaning should be construed as non-exclusive inclusions. For example: including a feature (e.g., material, component, ingredient, carrier, formulation, material, dimension, part, component, mechanism, device, process, procedure, method, reaction condition, processing condition, parameter, algorithm, signal, data, product, or article of manufacture), is to be construed as including not only the particular feature explicitly listed but also other features not explicitly listed as such which are known in the art.
The term "consisting of … …" is meant to exclude any technical feature elements not explicitly listed. If used in a claim, the term shall render the claim closed except for the inclusion of the technical features that are expressly listed except for the conventional impurities associated therewith. If the term occurs in only one clause of the claims, it is defined only to the elements explicitly recited in that clause, and elements recited in other clauses are not excluded from the overall claims.
The term "parts by mass" is meant to indicate the relationship of mass proportions between the various components, for example: if X component is X parts by mass and Y component is Y parts by mass, the mass ratio of the X component to the Y component is X: Y; 1 part by mass may represent any mass, for example: 1 part by mass may be expressed as 1kg or 3.1415926 kg. The sum of the parts by mass of all the components is not necessarily 100 parts, and may be more than 100 parts, less than 100 parts, or equal to 100 parts. Parts, ratios and percentages described herein are by mass unless otherwise indicated.
Unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, as for example: can be fixedly connected, can also be detachably connected or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms herein can be understood by those of ordinary skill in the art as appropriate.
When concentrations, temperatures, pressures, dimensions, or other parameters are expressed as ranges of values, the ranges are to be understood as specifically disclosing all ranges formed from any pair of upper, lower, and preferred values within the range, regardless of whether ranges are explicitly recited; for example, if a numerical range of "2 ~ 8" is recited, then the numerical range should be interpreted to include ranges of "2 ~ 7", "2 ~ 6", "5 ~ 7", "3 ~ 4 and 6 ~ 7", "3 ~ 5 and 7", "2 and 5 ~ 7", and the like. Unless otherwise indicated, the numerical ranges recited herein include both the endpoints thereof and all integers and fractions within the numerical range.
The terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom"
The terms "inner," "outer," "clockwise," "counterclockwise," and the like are used for convenience of description and simplicity of illustration only and are not intended to imply that the referenced devices or elements must be in a particular orientation, constructed and operated in a particular orientation, and are not to be construed as limiting the present disclosure.
Details which are not described in detail in the embodiments of the invention belong to the prior art which is known to the person skilled in the art. The examples of the present invention, in which specific conditions are not specified, were carried out according to the conventional conditions in the art or conditions suggested by the manufacturer. The reagents or instruments used in the examples of the present invention are not specified by manufacturers, and are all conventional products available by commercial purchase.
The invention relates to a crystal film for bulk transfer of a liquid-gas dual-state Mini/Micro LED chip, which comprises a substrate, a medium storage grid, a liquid-gas dual-state medium, a sealant, an elastic layer and an adhesive layer;
the substrate is arranged above the medium storage grid, the liquid-gas two-state medium, the sealant, the elastic layer and the bonding layer, the medium storage grid, the liquid-gas two-state medium and the sealant are arranged below the substrate and above the elastic layer, the medium storage grid is laid on the lower surface of the substrate, the liquid-gas two-state medium is distributed in the medium storage grid, the sealant is arranged on the radial outer side of the medium storage grid and the liquid-gas two-state medium, the substrate, the sealant and the elastic layer form a closed space, the medium storage grid and the liquid-gas two-state medium are sealed in the closed space formed by the substrate, the sealant and the elastic layer, the bonding layer is arranged on the lower surface of the elastic layer, and the bonding layer is coated on the lower surface of the elastic layer through the self-adhesive force of the bonding layer.
The substrate is one of glass and sapphire materials with good rigidity and light transmittance, and the transmittance of the substrate is more than 88%. The medium storage grid is one of single-layer mesh graphene, absorbent cotton and super absorbent plastic with better liquid absorption performance, and the thickness of the medium storage grid is 20-500 mu m. The liquid-gas binary medium is one of distilled water, acetone and pentane materials which have the normal-pressure boiling point of not higher than 100 ℃, the normal-pressure melting point of lower than 10 ℃ and are easy to heat. The sealant is one of acrylic acid, epoxy resin and organic silicon which have good sealing performance, are soft and elastic and can resist pressure and heat. The elastic layer is one of PDMS, PI, TPEE, TPU, PU, SBS, TPR and POE materials with good recoverable deformation capability. The adhesive layer is a thermal adhesive reducing layer or a UV adhesive reducing layer, the adhesive force is 1N-50N/25 mm before the adhesive layer is not heated or irradiated by ultraviolet light, and the adhesive force is 0N-0.1N/25 mm after the adhesive layer is heated or irradiated by ultraviolet light. The laser wavelength for irradiating the liquid-gas binary medium is 500-1800 nm, and the power is 0.1-20W.
The manufacturing method of the transfer crystal film comprises the following steps:
step 1: laying a layer of medium storage grid on the lower surface of the substrate; step 2: coating a circle of sealant around the media storage grid; and step 3: coating a bonding layer on the lower surface of the elastic layer; and 4, step 4: injecting a liquid-gas binary medium into the medium storage grid; and 5: covering the sealant and the medium storage layer with the elastic layer coated with the bonding layer, and sealing the liquid-gas binary medium; step 6: and putting the bonded crystal film for mass transfer of the liquid-gas dual-state Mini/Micro LED chip into a vacuum container for vacuumizing to realize that the liquid-gas dual-state medium is in close contact with the substrate and the elastic layer in a normal-temperature closed environment. And vacuumizing in a vacuum container for 10-30 minutes, wherein the vacuum degree is less than 1000 Pa.
The principle of the scheme is as follows:
in the transfer process, by means of the characteristic that the liquid-gas binary medium is easy to heat up and has a low boiling point and the characteristic that the viscosity of the bonding layer is obviously reduced after being heated, laser matched with the liquid-gas binary medium absorption spectrum is adopted to penetrate through the substrate to irradiate the liquid-gas binary medium, the temperature of the liquid-gas binary medium is driven to be rapidly raised to the boiling point for gasification, and meanwhile, the adhesive force of the bonding layer to the upper surface of the chip is obviously reduced. After the liquid-gas binary medium is gasified, a tiny bubble is formed in a closed space formed by the substrate, the sealant and the elastic layer, and the elastic layer with good deformability pushes the chip to move downwards under the action of the bubble. When the lower surface of the chip adhered to the bonding layer contacts the target substrate coated with the solder paste or the conductive adhesive, the chip is peeled off from the bonding layer to the target substrate because the adhesive force between the upper surface of the chip and the bonding layer is far smaller than that between the solder paste or the conductive adhesive on the lower surface of the chip and the target substrate. At the moment, laser irradiation is stopped, the liquid-gas binary medium is instantly liquefied, bubbles disappear, the elastic layer returns to the original position upwards, and the chip is transferred.
Compared with the prior art, the invention has the advantages that:
because the invention adopts the liquid-gas two-state medium mode, compared with the heat release mode, the defects of uneven viscosity change of a crystal film, uneven stress in the chip release process, difficult control of the chip posture caused by peeling by the dead weight of the chip, high working temperature and the like are avoided, and the high-precision transfer of the chip under friendly environmental temperature is realized; compared with an ablation mode, the defects that the falling position of the chip is not easy to control, the yield is low, the working environment is polluted, the crystal film cannot be reused, the working temperature is high and the like in the ablation release process are overcome, and the crystal film is reused and the chip is transferred with high precision at the pollution-free and environment-friendly temperature.
In summary, the liquid-gas binary Mini/Micro LED chip bulk transfer crystal film and the manufacturing method thereof in the embodiment of the invention have the advantages of being close to daily temperature, controllable in deformation amount, reusable, capable of being used for transferring Mini/Micro LED chips to a target substrate quickly, accurately, free of damage and pollution, and capable of greatly improving the LED chip transfer efficiency and transfer yield.
In order to more clearly show the technical solutions and the technical effects provided by the present invention, the following detailed description is provided for the embodiments of the present invention with specific embodiments.
Example 1
As shown in fig. 1, a bulk transfer crystal film for a liquid-gas dual-state Mini/Micro LED chip is composed of a substrate 1, a medium storage grid 2, a liquid-gas dual-state medium 3, a sealant 4, an elastic layer 5 and an adhesive layer 6. The method is characterized in that: the substrate 1 is located the medium storage grid 2, liquid-gas two-state medium 3, sealant 4, elastic layer 5 and tie coat 6, the medium storage grid 2, liquid-gas two-state medium 3 and sealant 4 are located the below of substrate 1 and the top of elastic layer 5, the medium storage grid 2 is laid on the lower surface of substrate 1, liquid-gas two-state medium 3 is distributed in the medium storage grid 2, sealant 4 is located the radial outside of medium storage grid 2 and liquid-gas two-state medium 3, substrate 1, sealant 4 and elastic layer 5 constitute a closed space, medium storage grid 2 and liquid-gas two-state medium 3 are closed in the closed space formed by substrate 1, sealant 4 and elastic layer 5, tie coat 6 is located the lower surface of elastic layer 5, coat on the lower surface of elastic layer 5 through the self viscous force of tie coat 6. The substrate 1 is one of glass and sapphire materials with good rigidity and light transmittance, and the transmittance of the substrate is greater than 88%. The medium storage grid 2 is one of single-layer mesh graphene, absorbent cotton and super absorbent plastic with good liquid absorption performance, and the thickness of the medium storage grid is 20-500 micrometers. The liquid-gas binary medium 3 is one of distilled water, acetone and pentane materials which have the normal-pressure boiling point of not higher than 100 ℃, the normal-pressure melting point of lower than 10 ℃ and are easy to heat. The sealant 4 is one of acrylic acid, epoxy resin and organic silicon which has good sealing performance, is soft and elastic and can resist pressure and heat. The elastic layer 5 is one of PDMS, PI, TPEE, TPU, PU, SBS, TPR and POE materials with good recoverable deformation capability.
As shown in fig. 2, a schematic structural diagram of a substrate 1, a medium storage grid 2, and a sealant 4 according to an embodiment of the present invention is shown, where the substrate 1 is located above the medium storage grid 2 and the sealant 4, the medium storage grid 2 is laid on a lower surface of the substrate 1, the sealant 4 is located on a radial outer side of the medium storage grid 2, and the medium storage grid 2 and the sealant 4 have the same thickness.
As shown in fig. 3, in the schematic diagram of the crystal film structure in the chip 7 transfer process according to the embodiment of the present invention, the laser 8 irradiates the liquid-gas binary medium 3 distributed inside the medium storage grid 2 through the substrate 1, the liquid-gas binary medium 3 absorbs the energy of the laser 8 and rapidly rises to the boiling point to be gasified, and at the same time, the temperature of the bonding layer 6 is raised, and the adhesion of the bonding layer 6 to the upper surface of the chip 7 is reduced. After the liquid-gas binary medium 3 is gasified, a tiny bubble 9 is formed in a closed space formed by the substrate 1, the sealant 4 and the elastic layer 5, and the elastic layer 7 with good deformability pushes the chip 7 to move downwards under the action of the bubble 9. When the lower surface of the chip 7 adhered to the adhesive layer 6 contacts the target substrate 11 coated with the solder paste or the conductive adhesive 10, the chip 7 is peeled off from the adhesive layer 6 to the target substrate 11 because the adhesion force between the upper surface of the chip 7 and the adhesive layer 6 is much smaller than the adhesion force between the solder paste or the conductive adhesive 10 on the lower surface of the chip and the target substrate 11. When the laser 8 stops irradiating the liquid-gas binary medium 3, the liquid-gas binary medium is instantly liquefied into a liquid state, and the elastic layer 5 is restored to the original state, as shown in fig. 1. The laser 8 irradiates the corresponding stations of the chip 7 in sequence, and the steps are repeatedly completed, so that the mass transfer of the chip 7 is completed. The adhesive layer 6 is a thermal adhesive reducing layer or a UV adhesive reducing layer, the adhesive force is 1N-50N/25 mm before the adhesive layer is not heated or irradiated by ultraviolet light, and the adhesive force is 0N-0.1N/25 mm after the adhesive layer is heated or irradiated by ultraviolet light. The wavelength of the laser 8 irradiating the liquid-gas binary medium 3 is 500nm to 1800nm, and the power is 0.1W to 20W.
As shown in fig. 4, a process for manufacturing a bulk transfer crystal film for a liquid-gas binary Mini/Micro LED chip comprises:
step 1: laying a layer of medium storage grid 2 on the lower surface of a substrate 1;
and 2, step: coating a bonding layer 6 on the lower surface of the elastic layer 5;
and step 3: coating a circle of sealant 4 around the medium storage grid 2;
and 4, step 4: injecting a liquid-gas binary medium 3 into the medium storage grid 2;
and 5: covering the sealant 3 and the medium storage layer 2 with the elastic layer 5 coated with the bonding layer 6, and sealing the liquid-gas binary medium 3;
step 6: and putting the bonded crystal film for mass transfer of the liquid-gas double-state Mini/Micro LED chip into a vacuum container for vacuumizing to realize that the liquid-gas double-state medium 3 is in close contact with the substrate 1 and the elastic layer 5 in a normal-temperature closed environment.
And vacuumizing in a vacuum container for 10-30 minutes, wherein the vacuum degree is less than 1000 Pa.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Claims (10)
1. A liquid-gas two-state Mini/Micro LED chip bulk transfer crystal film is characterized in that: the liquid-gas dual-state medium comprises a substrate (1), a medium storage grid (2), a liquid-gas dual-state medium (3), a sealant (4), an elastic layer (5) and a bonding layer (6);
the substrate (1) is positioned above the medium storage grid (2), the liquid-gas binary medium (3), the sealant (4), the elastic layer (5) and the bonding layer (6), the medium storage grid (2), the liquid-gas binary medium (3) and the sealant (4) are positioned below the substrate (1) and above the elastic layer (5), the medium storage grid (2) is laid on the lower surface of the substrate (1), the liquid-gas binary medium (3) is distributed in the medium storage grid (2), the sealant (4) is positioned on the radial outer sides of the medium storage grid (2) and the liquid-gas binary medium (3), the substrate (1), the sealant (4) and the elastic layer (5) form a closed space, and the medium storage grid (2) and the liquid-gas binary medium (3) are closed in the closed space formed by the substrate (1), the sealant (4) and the elastic layer (5), the bonding layer (6) is positioned on the lower surface of the elastic layer (5), and the self adhesive force of the bonding layer (6) is coated on the lower surface of the elastic layer (5).
2. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the substrate (1) is one of glass and sapphire materials with good rigidity and light transmittance, and the transmittance of the substrate is greater than 88%.
3. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the medium storage grid (2) is one of single-layer mesh graphene, absorbent cotton and super absorbent plastic with good liquid absorption performance, and the thickness of the medium storage grid is 20-500 mu m.
4. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the liquid-gas binary medium (3) is one of distilled water, acetone and pentane materials which have the normal-pressure boiling point of not higher than 100 ℃, the normal-pressure melting point of lower than 10 ℃ and are easy to heat.
5. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the sealant (4) is one of acrylic acid, epoxy resin and organic silicon which have good sealing performance, are soft and elastic and can resist pressure and heat.
6. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the elastic layer (5) is one of PDMS, PI, TPEE, TPU, PU, SBS, TPR and POE materials with good recoverable deformation capability.
7. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the adhesive layer (6) is a thermal adhesive reducing layer or a UV adhesive reducing layer, the adhesive force is 1N-50N/25 mm before the adhesive layer is not heated or irradiated by ultraviolet light, and the adhesive force is 0N-0.1N/25 mm after the adhesive layer is heated or irradiated by ultraviolet light.
8. The liquid-gas binary Mini/Micro LED chip bulk transfer crystal film according to claim 1, wherein: the laser wavelength for irradiating the liquid-gas binary medium (3) is 500 nm-1800 nm, and the power is 0.1W-20W.
9. The method for manufacturing the liquid-gas dual-state Mini/Micro LED chip bulk transfer crystal film according to any one of claims 1 to 8, comprising the steps of:
step 1: laying a layer of medium storage grid (2) on the lower surface of a substrate (1);
step 2: coating a bonding layer (6) on the lower surface of the elastic layer (5);
and step 3: coating a circle of sealant (4) around the medium storage grid (2);
and 4, step 4: injecting a liquid-gas binary medium (3) into the medium storage grid (2);
and 5: covering the sealant (3) and the medium storage layer (2) with the elastic layer (5) coated with the bonding layer (6), and sealing the liquid-gas binary medium (3);
step 6: and putting the bonded crystal film for mass transfer of the liquid-gas dual-state Mini/Micro LED chip into a vacuum container for vacuumizing to realize that the liquid-gas dual-state medium (3) is in close contact with the substrate (1) and the elastic layer (5) in a normal-temperature closed environment.
10. The method for manufacturing the crystal film for liquid-gas binary Mini/Micro LED chip mass transfer according to claim 9, wherein the method comprises the following steps: and vacuumizing in a vacuum container for 10-30 minutes, wherein the vacuum degree is less than 1000 Pa.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20220399298A1 (en) * | 2021-06-15 | 2022-12-15 | International Business Machines Corporation | Solder transfer integrated circuit packaging |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20220399298A1 (en) * | 2021-06-15 | 2022-12-15 | International Business Machines Corporation | Solder transfer integrated circuit packaging |
| US11631650B2 (en) * | 2021-06-15 | 2023-04-18 | International Business Machines Corporation | Solder transfer integrated circuit packaging |
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