CN116005258A - Method and device for controlling cooling of semiconductor production equipment and crystal pulling furnace - Google Patents
Method and device for controlling cooling of semiconductor production equipment and crystal pulling furnace Download PDFInfo
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- CN116005258A CN116005258A CN202211696030.1A CN202211696030A CN116005258A CN 116005258 A CN116005258 A CN 116005258A CN 202211696030 A CN202211696030 A CN 202211696030A CN 116005258 A CN116005258 A CN 116005258A
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- pulling furnace
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- 239000013078 crystal Substances 0.000 title claims abstract description 115
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000001816 cooling Methods 0.000 title claims abstract description 23
- 238000011084 recovery Methods 0.000 claims abstract description 39
- 230000001681 protective effect Effects 0.000 claims abstract description 31
- 238000001914 filtration Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 7
- 238000004880 explosion Methods 0.000 claims description 4
- 239000013618 particulate matter Substances 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000013022 venting Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 110
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention provides a semiconductor production device and a cooling control method and device of a crystal pulling furnace. The semiconductor production apparatus includes: a crystal pulling furnace comprising a main furnace chamber; the tail gas recovery component is connected with the gas output end of the crystal pulling furnace and is used for recovering and storing the protective gas exhausted by the crystal pulling furnace in the crystal pulling process, the output end of the gas treatment component is communicated with the main furnace chamber of the crystal pulling furnace, and the tail gas recovery component is also used for introducing the stored protective gas into the crystal pulling furnace after the crystal pulling process is finished.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to semiconductor production equipment and a cooling control method and device of a crystal pulling furnace.
Background
Single crystal silicon is now the substrate material for most semiconductor components, with the vast majority of single crystal silicon being produced by the czochralski single crystal fabrication process. The crystal pulling furnace mainly comprises a base, a main furnace chamber, a furnace cover and an auxiliary furnace chamber, and the subsequent production process can be carried out after the main furnace chamber is cooled after the crystal pulling is finished. In the prior art, the main furnace chamber is usually opened to cool naturally or a blower is used for carrying out cooling purging, but the cooling efficiency in the mode is low, meanwhile, the temperature of the main furnace chamber is higher just when the main furnace chamber is opened, and oxygen in the air can oxidize internal parts to influence the service life of the crystal pulling furnace.
Disclosure of Invention
The embodiment of the invention provides semiconductor production equipment and a cooling control method and device of a crystal pulling furnace, which are used for solving the problem that the service life of the crystal pulling furnace is influenced due to oxidation of the internal structure of a main furnace chamber.
To solve the above problems, the present invention is achieved as follows:
in a first aspect, an embodiment of the present invention provides a semiconductor production apparatus, including:
a crystal pulling furnace comprising a main furnace chamber;
the tail gas recovery component is connected with the gas output end of the crystal pulling furnace and is used for recovering and storing the protective gas exhausted by the crystal pulling furnace in the crystal pulling process, the tail gas recovery component is communicated with the main furnace chamber of the crystal pulling furnace, and the tail gas recovery component is also used for introducing the stored protective gas into the crystal pulling furnace after the crystal pulling process is finished;
the semiconductor production equipment further comprises a gas treatment assembly, wherein the gas treatment assembly is connected between the output end of the tail gas recovery assembly and the air inlet end of the main furnace chamber of the crystal pulling furnace, and the gas treatment assembly is used for purifying the protective gas recovered by the tail gas recovery assembly and adjusting the temperature of the protective gas.
In some embodiments, the output end of the gas treatment assembly is in communication with a main furnace chamber of the crystal pulling furnace through a vent valve disposed on a furnace lid of the crystal pulling furnace.
In some embodiments, a gas diffuser is also disposed within the main furnace chamber of the crystal pulling furnace, and the explosion venting valve is in communication with the gas diffuser.
In some embodiments, the gas diffuser is disposed along a longitudinal central axis of the primary furnace chamber, the gas diffuser includes a plurality of gas outlet holes, and the gas outlet holes are disposed radially of the gas diffuser, the gas diffuser being disposed above a crucible axis of the primary furnace chamber.
In some embodiments, the gas treatment assembly includes a cooler and a filter in series with each other, the filter including a screen to filter particulate matter and an adsorption medium to adsorb moisture.
In a second aspect, an embodiment of the present invention provides a cooling control method for a crystal pulling furnace, applied to any one of the above semiconductor production apparatuses, the method including:
in the crystal pulling process, the protective gas exhausted by the crystal pulling furnace is recovered and stored through the tail gas recovery component;
and after the crystal pulling process is finished, the stored protective gas is introduced into the main furnace chamber of the crystal pulling furnace through the tail gas recovery assembly so as to cool the main furnace chamber.
In some embodiments, the passing the shielding gas stored by the off-gas recovery assembly into the main furnace chamber of the crystal pulling furnace comprises:
cooling the shielding gas to a target temperature by a cooler, wherein the target temperature is not higher than 40 ℃;
filtering the cooled shielding gas through a filter, wherein the filtering comprises at least one of solid particulate filtering and drying;
and introducing the filtered protective gas into a main furnace chamber of the crystal pulling furnace.
In a third aspect, an embodiment of the present invention provides a cooling control apparatus for a crystal pulling furnace, applied to any one of the above semiconductor production apparatuses, the apparatus comprising:
the gas recovery control module is used for controlling the tail gas recovery assembly to recover and store the protective gas exhausted by the crystal pulling furnace in the crystal pulling process;
and the cooling control module is used for controlling the tail gas recovery assembly to introduce the stored protective gas into the main furnace chamber of the crystal pulling furnace after the crystal pulling process is finished so as to cool the main furnace chamber.
According to the embodiment of the invention, the tail gas recovery assembly is arranged, so that the protective gas used in the crystal pulling process can be recovered and stored, the protective gas is generally inert gas, such as argon, after crystal pulling is finished, the stored protective gas is utilized to cool the structure in the main furnace chamber of the crystal pulling furnace, thereby being beneficial to improving the cooling speed of the crystal pulling furnace, avoiding oxidation of internal parts of the crystal pulling furnace, saving the cost and prolonging the service life of the crystal pulling furnace.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic view of a semiconductor production apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for controlling cooling of a crystal puller provided by an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a cooler according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terms "first," "second," and the like in embodiments of the present invention are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. Furthermore, the use of "and/or" in this application means at least one of the connected objects, such as a and/or B and/or C, is meant to encompass the 7 cases of a alone, B alone, C alone, and both a and B, both B and C, both a and C, and both A, B and C.
The embodiment of the invention provides semiconductor production equipment.
In one embodiment, the semiconductor manufacturing facility includes a crystal pulling furnace and an off-gas recovery assembly.
As shown in FIG. 1, in one embodiment, the crystal pulling furnace comprises a secondary furnace chamber 101, a furnace lid 102, a primary furnace chamber 103, a primary heater 104, an exhaust conduit 105, a crucible shaft 106, and an underlying insulating blanket 107.
In the crystal pulling process, firstly placing a polycrystalline silicon material into a quartz crucible for melting, firstly enabling a seed crystal to contact with a melt in the process of pulling the single crystal, enabling the melt at a solid-liquid interface to be cooled and crystallized along the seed crystal, slowly pulling out the seed crystal for growth, amplifying the growth diameter of the crystal until reaching a target diameter by reducing the pulling speed or the temperature of the melt after necking is completed, enabling the crystal to grow into an equal diameter growth stage by controlling the pulling speed and the temperature of the melt after shoulder turning, and finally gradually reducing the diameter of a crystal growth surface to form a tail cone by increasing the pulling speed and increasing the temperature of the melt until the crystal leaves the surface of the melt finally, thus completing the growth of the crystal rod.
The structure of the crystal pulling furnace itself and the crystal pulling process can be specifically referred to the related art, and will not be described herein.
The tail gas recovery assembly 109 is connected to the gas output of the crystal pulling furnace, and the tail gas recovery assembly 109 is used for recovering and storing the shielding gas exhausted from the crystal pulling furnace during the crystal pulling process.
The embodiment of the invention provides a cooling control method of a crystal pulling furnace, which is applied to the semiconductor production equipment in any one of the embodiments of the invention.
As shown in fig. 2, in one embodiment, the method includes:
step 201: and in the crystal pulling process, the protective gas exhausted by the crystal pulling furnace is recovered and stored through the tail gas recovery assembly.
In practice, each of the off-gas recovery modules 109 may be coupled to the output of one or more crystal pulling furnaces to recover a shielding gas used in the crystal pulling process, typically an inert gas selected to avoid oxidation of the ingot, and may be selected to include, but not limited to, inert gases such as argon.
Step 202: and after the crystal pulling process is finished, the stored protective gas is introduced into the main furnace chamber of the crystal pulling furnace through the tail gas recovery assembly so as to cool the main furnace chamber.
It will be appreciated that the output of the gas treatment assembly 110 is in communication with the main furnace chamber 103 of the crystal pulling furnace, and that the off-gas recovery assembly 109 is also adapted to introduce a stored shielding gas to the crystal pulling furnace after the crystal pulling process is completed.
After the crystal pulling is completed, the temperature in the main furnace chamber 103 is relatively high, and at this time, the shielding gas stored in the gas processing assembly 110 is introduced into the main furnace chamber 103 of the crystal pulling furnace, thereby cooling the components in the main chamber, particularly the thermal field components in the main heater 104, the bottom insulation blanket, and the like, by the stored shielding gas.
The gas in the main chamber is further exhausted through the exhaust pipe 105, and when the method is implemented, the exhaust pipe 105 can be connected to the tail gas recovery assembly 109 again to recover the shielding gas, and the shielding gas can be directly exhausted after the treatment reaches the exhaust requirement.
The tail gas recovery assembly 109 is arranged, so that the protective gas used in the crystal pulling process can be recovered and stored, the protective gas is generally inert gas, such as argon, in order to avoid oxidation of silicon rods, and after crystal pulling is finished, the stored protective gas is utilized to cool the structure in the main furnace chamber 103 of the crystal pulling furnace, so that the cooling speed of the crystal pulling furnace is improved, oxidation of internal components of the crystal pulling furnace is avoided, and cost saving and service life improvement of the crystal pulling furnace are facilitated.
Meanwhile, the used shielding gas comes from the previous processing technology, so that the cost of purchasing the shielding gas can be saved, and the utilization rate of the shielding gas is also improved.
In some embodiments, the semiconductor manufacturing facility further comprises a gas treatment assembly 110, the gas treatment assembly 110 being connected between the output of the tail gas recovery assembly 109 and the inlet end of the main furnace chamber 103 of the crystal pulling furnace.
In some embodiments, the step 202 includes:
cooling the shielding gas to a target temperature by a cooler, wherein the target temperature is not higher than 40 ℃;
subjecting the cooled shielding gas to a filtration treatment by a filter 1, wherein the filtration treatment includes at least one of solid particulate matter filtration and drying treatment;
and introducing the filtered protective gas into a main furnace chamber of the crystal pulling furnace.
In this embodiment, a gas treatment assembly 110 is further provided, and the gas treatment assembly 110 is used for purifying the shielding gas recovered by the exhaust gas recovery assembly 109 and adjusting the temperature of the shielding gas.
In one embodiment, the gas treatment assembly 110 includes a cooler 1101 and a filter 1102 in series with each other, the cooler 1101 being configured to regulate the temperature of the shielding gas, the filter 1102 including one or more of a screen to filter particulate matter and an adsorption medium to adsorb moisture.
In an exemplary embodiment, the cooler 1101 may be a gas-cooled heat exchanger, preferably a water-cooled heat exchanger, as shown in fig. 3, and may be a water-cooled plate heat exchanger, in which, in operation, a room-temperature or low-temperature cooling liquid, such as water, is introduced through a water inlet, the cooling liquid is discharged through a water outlet, a shielding gas enters from an air inlet to exchange heat with the cooling liquid, and the cooled shielding gas is discharged from an air outlet. In this way, the temperature of the shielding gas can be rapidly reduced. Generally, the shielding gas may be cooled to room temperature, and may be, for example, about 25 degrees celsius, so that only a normal temperature water source is required to be introduced into the water-cooled plate heat exchanger.
The filter 1102 is internally provided with a filter screen type filter medium, so that the filtering of particulate matters in the shielding gas can be realized, and the filter 1102 is internally provided with an adsorption medium, so that the moisture in the shielding gas can be removed, and the purity of the shielding gas is improved.
In some embodiments, the output of the gas treatment assembly 110 is in communication with the main furnace chamber 103 of the crystal pulling furnace through a vent valve 108 provided on the furnace lid 102 of the crystal pulling furnace, which ensures that flash explosion and the like hazards do not occur.
Further, in some embodiments, a gas diffuser 111 is also disposed within the main furnace chamber 103 of the crystal pulling furnace, and the explosion venting valve 108 is in communication with the gas diffuser 111. The gas diffuser 111 serves to improve the uniformity of diffusion of the shielding gas after it enters the main furnace chamber 103.
In some embodiments, the gas diffuser 111 is disposed along a longitudinal central axis of the main furnace chamber 103, the gas diffuser 111 includes a plurality of gas outlet holes 1111, and the gas outlet holes 1111 are disposed radially of the gas diffuser 111, the gas diffuser 111 being disposed above the crucible axis 106 of the main furnace chamber 103.
As shown in fig. 1, in one embodiment, the gas diffuser 111 is generally cylindrical, and when implemented, the axis of the gas diffuser 111 is disposed generally along the longitudinal central axis of the main furnace chamber 103, and the gas outlet holes 1111 are disposed along the circumferential direction of the gas diffuser 111 toward the inner wall of the main furnace chamber 103, thereby helping to more uniformly diffuse the shielding gas within the main furnace chamber 103.
An embodiment of the present invention provides a cooling control apparatus for a crystal pulling furnace, applied to the semiconductor production equipment of any one of the first aspect, the apparatus comprising:
the gas recovery control module is used for controlling the tail gas recovery assembly to recover and store the protective gas exhausted by the crystal pulling furnace in the crystal pulling process;
and the cooling control module is used for controlling the tail gas recovery assembly to introduce the stored protective gas into the main furnace chamber of the crystal pulling furnace after the crystal pulling process is finished so as to cool the main furnace chamber.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (8)
1. A semiconductor production apparatus, characterized by comprising:
a crystal pulling furnace comprising a main furnace chamber;
the tail gas recovery component is connected with the gas output end of the crystal pulling furnace and is used for recovering and storing the protective gas exhausted by the crystal pulling furnace in the crystal pulling process, the tail gas recovery component is communicated with the main furnace chamber of the crystal pulling furnace, and the tail gas recovery component is also used for introducing the stored protective gas into the crystal pulling furnace after the crystal pulling process is finished;
the semiconductor production equipment further comprises a gas treatment assembly, wherein the gas treatment assembly is connected between the output end of the tail gas recovery assembly and the air inlet end of the main furnace chamber of the crystal pulling furnace, and the gas treatment assembly is used for purifying the protective gas recovered by the tail gas recovery assembly and adjusting the temperature of the protective gas.
2. The semiconductor manufacturing apparatus of claim 1, wherein the output of the gas treatment assembly is in communication with the main furnace chamber of the crystal pulling furnace through a vent valve disposed on a furnace lid of the crystal pulling furnace.
3. The semiconductor manufacturing apparatus of claim 2, wherein a gas diffuser is further disposed within the main furnace chamber of the crystal pulling furnace, the explosion venting valve being in communication with the gas diffuser.
4. The semiconductor manufacturing apparatus of claim 3, wherein the gas diffuser is disposed along a longitudinal central axis of the main furnace chamber, the gas diffuser includes a plurality of gas outlet holes, and the gas outlet holes are disposed along a radial direction of the gas diffuser, the gas diffuser being disposed above a crucible axis of the main furnace chamber.
5. The semiconductor manufacturing apparatus of claim 1, wherein the gas processing assembly comprises a cooler and a filter connected in series with each other, the filter comprising a screen for filtering particulate matter and an adsorption medium for adsorbing moisture.
6. A cooling control method of a crystal pulling furnace, characterized by being applied to the semiconductor production apparatus as set forth in any one of claims 1 to 5, the method comprising:
in the crystal pulling process, the protective gas exhausted by the crystal pulling furnace is recovered and stored through the tail gas recovery component;
and after the crystal pulling process is finished, the stored protective gas is introduced into the main furnace chamber of the crystal pulling furnace through the tail gas recovery assembly so as to cool the main furnace chamber.
7. The method of claim 6, wherein said passing the shielding gas stored by the off-gas recovery assembly into the main furnace chamber of the crystal pulling furnace comprises:
cooling the shielding gas to a target temperature by a cooler, wherein the target temperature is not higher than 40 ℃;
filtering the cooled shielding gas through a filter, wherein the filtering comprises at least one of solid particulate filtering and drying;
and introducing the filtered protective gas into a main furnace chamber of the crystal pulling furnace.
8. A cooling control apparatus for a crystal pulling furnace, applied to the semiconductor production facility of any one of claims 1 to 5, comprising:
the gas recovery control module is used for controlling the tail gas recovery assembly to recover and store the protective gas exhausted by the crystal pulling furnace in the crystal pulling process;
and the cooling control module is used for controlling the tail gas recovery assembly to introduce the stored protective gas into the main furnace chamber of the crystal pulling furnace after the crystal pulling process is finished so as to cool the main furnace chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211696030.1A CN116005258A (en) | 2022-12-28 | 2022-12-28 | Method and device for controlling cooling of semiconductor production equipment and crystal pulling furnace |
| TW112105730A TWI855558B (en) | 2022-12-28 | 2023-02-17 | Semiconductor production equipment and cooling control method and device for crystal pulling furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211696030.1A CN116005258A (en) | 2022-12-28 | 2022-12-28 | Method and device for controlling cooling of semiconductor production equipment and crystal pulling furnace |
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| Publication Number | Publication Date |
|---|---|
| CN116005258A true CN116005258A (en) | 2023-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211696030.1A Pending CN116005258A (en) | 2022-12-28 | 2022-12-28 | Method and device for controlling cooling of semiconductor production equipment and crystal pulling furnace |
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| Country | Link |
|---|---|
| CN (1) | CN116005258A (en) |
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- 2022-12-28 CN CN202211696030.1A patent/CN116005258A/en active Pending
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |