CN115998254A - Skin color detection device based on micro-LED and preparation method thereof - Google Patents
Skin color detection device based on micro-LED and preparation method thereof Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title description 8
- 238000000034 method Methods 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 51
- 238000012546 transfer Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 21
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 20
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 9
- 230000007480 spreading Effects 0.000 claims description 9
- 238000003892 spreading Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000003086 colorant Substances 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 65
- 229910002601 GaN Inorganic materials 0.000 description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 230000036561 sun exposure Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 208000017667 Chronic Disease Diseases 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010023 transfer printing Methods 0.000 description 4
- 206010020751 Hypersensitivity Diseases 0.000 description 3
- 230000007815 allergy Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000001684 chronic effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 241000167854 Bourreria succulenta Species 0.000 description 1
- 208000001408 Carbon monoxide poisoning Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 208000000453 Skin Neoplasms Diseases 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 208000026935 allergic disease Diseases 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 208000007502 anemia Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000019693 cherries Nutrition 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000003862 health status Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000019612 pigmentation Effects 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 201000000849 skin cancer Diseases 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a skin color detection device based on micro-LEDs, which comprises an emission module, a detection module and a driving module, wherein the emission module and the detection module are respectively a first micro-LED array and a second micro-LED array which are prepared by growing on the same InGaN/GaN epitaxial wafer. The size of each pixel unit in the first micro-LED array is smaller than that of each pixel unit in the second micro-LED array, the driving module can apply positive bias voltage to the first micro-LED array so as to enable the emitting module to emit light signals, and the driving module can apply negative bias voltage to the second micro-LED array so as to enable the detecting module to obtain photocurrent by detecting the intensity of the light signals reflected through skin. The device can detect skin colors of different parts in real time.
Description
Technical Field
The invention relates to the technical field of skin color detection, in particular to a skin color detection device based on micro-LEDs, a preparation method thereof and a skin color detection system based on micro-LEDs.
Background
The early detection and diagnosis of chronic diseases is particularly important because they are slow, long-lasting and difficult to cure. Skin color is one of the indicators that directly reflects the health status of the human body, and many chronic diseases are accompanied by subtle changes in skin color. For example, skin may become pale due to anemia, yellow due to jaundice, pigmentation due to chronic hypoadrenocortical function, cherry red due to carbon monoxide poisoning, and bluish purple due to chronic heart-lung failure. Common skin diseases or sun exposure can also cause skin color changes, and excessive sun exposure can burn the skin and even cause skin cancer. Therefore, monitoring of skin color is particularly important in daily life.
The traditional skin color detection means at present mainly belongs to the field of image technology processing and mainly comprises an image conversion unit for converting an image to be detected into an image in a color space, a sample acquisition unit for acquiring a skin color sample of the image to be detected in the color space, a model construction unit for acquiring a standard skin color probability model and a skin color detection unit for detecting the skin color sample by using the standard skin color probability model to acquire skin color probability distribution of the image to be detected. However, the technology can only be used for extracting and detecting skin colors in images, cannot be used for detecting human skin in real time, and has a complex device structure.
A bracelet that can be used for skin tone monitoring is disclosed in the prior art. The device comprises an LED lamp, a skin color sensor, a control circuit board and a display screen for displaying skin chromaticity. The device irradiates the skin surface through the light emission of the commercial LED lamp with large size, receives the reflected light of the skin surface through the external skin color sensor, irradiates the skin color sensor, balances and compensates the received target signal through the control circuit board, and finally displays the skin chromaticity through the display screen. The LED lamps and the skin color sensor in the skin color detection bracelet are large in size, the detection range is fixed, and local skin color changes caused by certain chronic diseases and allergies can not be detected. In addition, detection has certain limitations, and since the bracelet is non-transparent, the wearing area cannot receive sun exposure, and thus skin color change caused by sun exposure cannot be detected when the bracelet is worn. In addition, the technology needs to be matched with a specific external skin color sensor for the LED lamp, and the equipment cost is high.
Therefore, it is desirable to provide a skin color detection device capable of detecting skin color and color change of different parts of a human body in real time, so as to solve the above problems in the prior art.
Disclosure of Invention
The present invention has been made in view of the above problems, and has as its object to provide a micro-LED based skin tone detection device and a method of manufacturing the same, a micro-LED based skin tone detection system, which overcome or at least partially solve the above problems.
According to one aspect of the invention, a skin color detection device based on micro-LEDs is provided, and the skin color detection device comprises a transmitting module, a detecting module and a driving module, wherein the transmitting module and the detecting module are respectively a first micro-LED array and a second micro-LED array which are prepared by growing on the same InGaN/GaN epitaxial wafer, the transmitting module and the detecting module are packaged on a flexible circuit board, the driving module is suitable for applying forward bias voltage to the transmitting module so as to enable the transmitting module to emit light signals, and the driving module is suitable for applying negative bias voltage to the detecting module so as to enable the detecting module to obtain photocurrent by detecting the intensity of the light signals reflected by skin.
Optionally, in the above device, the emitting module and the detecting module are spaced apart by a predetermined distance, the first micro-LED array includes a plurality of pixel units of a first size, and the second micro-LED array includes a plurality of pixel units of a second size, and the first size is smaller than the second size.
The device is based on the principle that an InGaN/GaN quantum well can absorb photons and emit photons, micro-LED pixel arrays with two different sizes are prepared on an InGaN/GaN epitaxial wafer by the same process, and micro-LEDs with different sizes are transferred to the same flexible transparent substrate by transfer printing technology, so that the device realizes the dual functions of an emitting end and a receiving end under different driving conditions, and the effect of monitoring skin color in real time is achieved.
According to another aspect of the invention, a micro-LED-based skin color detection system is provided, which comprises the skin color detection device, a transimpedance amplifier, a control circuit and a micro-LED display screen, wherein the transimpedance amplifier, the control circuit and the micro-LED display screen are sequentially connected with a detection module. The micro-LED display screen is suitable for displaying skin color information.
The system is integrated on the same flexible circuit board, can be well attached to the skin and is convenient to wear, and can detect the slight changes of the skin colors of different parts of the human body in real time and detect the skin color changes under the sun.
According to still another aspect of the present invention, there is provided a method for manufacturing a micro-LED-based skin tone detection device, in which first, an ITO current spreading layer is deposited on the surface of an InGaN/GaN epitaxial wafer; then, etching a preset number of first-size pixel units and second-size pixel units on the surface of the current expansion layer to form a first mesa structure, wherein the first size is smaller than the second size; then, depositing an insulating layer on the first mesa structure, and opening holes in the insulating layer to obtain a second mesa structure; depositing a metal layer on the second mesa structure so as to form a P electrode and an N electrode at the opening, thereby obtaining a micro-LED array device; and finally, transferring the micro-LED array device to a flexible transparent substrate, and depositing a metal layer on the flexible transparent substrate to obtain the flexible micro-LED array device.
Alternatively, in the method according to the present invention, an InGaN/GaN epitaxial wafer includes a silicon substrate and an undoped GaN layer, an n-GaN layer, a stress buffer layer, an InGaN/GaN multiple quantum hydrazine layer, an electron blocking layer and a p-GaN layer sequentially grown on the substrate.
Alternatively, in the method according to the present invention, the first size of the pixel unit in the first micro-LED array and the second size of the pixel unit in the second micro-LED array may be defined by a first mask plate; and then spin-coating photoresist on the surface of the current expansion layer, irradiating the first mask plate by ultraviolet light, etching the current expansion layer by a wet method, and etching the epitaxial wafer to an n-type GaN layer from top to bottom by an inductively coupled plasma dry etching process to obtain a first mesa structure comprising a first size mesa and a second size mesa, wherein the first size mesa and the second size mesa are spaced by a preset distance.
Alternatively, in the method according to the present invention, the position and size of the opening may be defined by a second mask plate; and then spin-coating photoresist on the surface of the insulating layer, irradiating the second mask plate by ultraviolet light, and perforating the first mesa structure by wet etching and inductively coupled plasma dry etching processes to expose the current expansion layer and the n-GaN layer.
Alternatively, in the method according to the invention, the insulating layer material may be SiO 2 、Al 2 O 3 、Si 3 N 4 CHF is used for inductively coupled plasma etching 3 The gas is subjected to dry etching, and wet etching is performed by using a BOE solution.
Alternatively, in the method according to the present invention, photoresist is spin-coated on the surface of the second mesa structure, the second mask is irradiated with ultraviolet light, a double-layered metal is evaporated or sputtered, and then a P electrode is formed at the opening exposing the current spreading layer through a lift-off process, and an N electrode is formed at the opening exposing the N-GaN layer. Wherein the double-layer metal is any one of Ti/Au, ti/Al and Cr/Au.
Alternatively, in the method according to the invention, the substrate of the micro-LED array device may be etched away by wet etching, so that the device is held by the anchor structure; then, dropping ultraviolet curing glue on the flexible transparent substrate; fully contacting a prefabricated PDMS transfer head with the micro-LED array device and breaking an anchor structure for fixing the device, so that the device is adhered to the PDMS transfer head; aligning the PDMS transfer head of the adhesive device with ultraviolet curing glue on the flexible transparent substrate to separate the device from the PDMS transfer head; irradiating the ultraviolet curing adhesive by ultraviolet light to print the device on the flexible transparent substrate; and spin-coating photoresist on the surface of the flexible transparent substrate, irradiating the second mask plate by ultraviolet light, and depositing a metal layer to form a positive electrode and a negative electrode, thereby obtaining the flexible micro-LED array device.
According to the scheme of the invention, the skin color detection device based on the micro-LEDs can detect skin colors of different human body parts in real time, an array with two pixels with different sizes is prepared on an InGaN/GaN epitaxial wafer by the same process, and then the micro-LEDs with different sizes are transferred onto the same transparent flexible substrate by a transfer printing technology, so that the device realizes the dual functions of a transmitting end and a receiving end under different driving conditions. The small-size pixel is used as the receiving end to generate photocurrent corresponding to the reflectivity of different skins, and the change of different skin colors is reflected by the magnitude of the photocurrent generated by the receiving end, so that the effect of monitoring the skin color in real time is achieved. Compared with skin color detection equipment integrated by a traditional large-size LED and a silicon photoelectric detector, the skin color detection device and system provided by the invention have the advantages of simple and compact structure, small size, flexibility, simple preparation process, convenience in wearing when devices are attached to skin, and capability of detecting the slight changes of skin colors at different parts of a human body in real time and detecting the changes of skin colors under sunlight.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
fig. 1 shows a schematic structural diagram of a micro-LED based skin tone detection device 100 according to one embodiment of the present invention;
FIG. 2 shows a schematic diagram of a micro-LED based skin tone detection system 200 according to one embodiment of the present invention;
FIG. 3 shows a flow diagram of a method 300 of manufacturing a micro-LED based skin tone detection device according to one embodiment of the invention;
FIG. 4 shows a first device architecture diagram according to one embodiment of the invention;
FIG. 5 illustrates a first mesa structure schematic diagram in accordance with one embodiment of the present invention;
FIG. 6 illustrates a second mesa schematic diagram in accordance with one embodiment of the present invention;
fig. 7 shows a schematic structural diagram of a micro-LED array device according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The existing skin color detection bracelet is large in size, cost and power consumption, the detection range is fixed, for example, the skin color detection bracelet can only detect skin at a wrist, local skin color change caused by certain chronic diseases and allergies can not be detected, and the wearing area can not be directly subjected to sun exposure because the bracelet is non-transparent, so that skin color change caused by sun exposure when the bracelet is worn can not be detected.
According to the skin color detection device capable of detecting skin colors in real time, based on the double functions of absorbing photons and emitting photons of an InGaN/GaN quantum well, micro-LED arrays (the structures of all pixel units in the arrays are the same and have at least different sizes) are prepared on the same InGaN/GaN epitaxial wafer, the arrays take small-size pixels as light emitting ends and large-size pixels as detection ends under different bias voltages, and the device is simple in preparation process and can be used for skin color detection of skins of different parts of a human body. Meanwhile, the integrated device on the flexible transparent substrate can detect skin color change caused by sun exposure.
Fig. 1 shows a schematic structure of a micro-LED based skin tone detection device 100 according to one embodiment of the present invention. As shown in fig. 1, the apparatus 100 includes an emission module 110, a detection module 120, and a driving module 130, wherein the emission module 110 and the detection module 120 are packaged on a flexible transparent substrate. The emitting module 110 and the detecting module 120 are a first micro-LED array and a second micro-LED array which are prepared by growing on the same InGaN/GaN epitaxial wafer, wherein the first micro-LED array and the second micro-LED array comprise a plurality of pixel units, and the size of each pixel unit in the first micro-LED array is smaller than that of each pixel unit in the second micro-LED array. The driving module 130 may apply a positive bias voltage to the first micro-LED array so that the emitting module 110 emits an optical signal, and the driving module 130 may apply a negative bias voltage to the second micro-LED array so that the detecting module 120 obtains a photocurrent by detecting the intensity of the optical signal reflected by the skin. Since the reflectivity of the light signal is different for different skin colors, the intensity of the reflected light signal received by the detection module 120 is also different for different skin colors, and thus the photocurrent output by the detection module 120 under negative bias is also different.
In order to display the detected skin color information in real time, the apparatus 100 may further include a transimpedance amplifier, a control circuit and a micro-LED display screen sequentially connected with the detection module 120, the transimpedance amplifier may convert the photocurrent detected by the detection module 120 into a photovoltage, the control circuit may convert the photovoltage signal into corresponding skin color information, and the micro-LED display screen may display the skin color information in real time.
Fig. 2 shows a schematic structural diagram of a micro-LED based skin tone detection system 200 according to one embodiment of the present invention. As shown in fig. 2, the system 200 includes, in addition to the micro-LED based skin tone detection device 100, a transimpedance amplifier 140, a control circuit 150, and a micro-LED display screen 160, which are sequentially connected to the detection module 120. The transimpedance amplifier 140 can convert the photocurrent detected by the detection module 120 into photovoltage, and can amplify the photocurrent proportionally, so that the detection is facilitated. The control circuit 150 may be a microprocessor, and may convert the photovoltage analog signal into a digital signal, so that the micro-LED display 160 displays corresponding skin color information in real time according to the digital signal.
The micro-LED skin color detection device integrates light emission and detection, has a small structure and a simple preparation process, and can detect skin colors on skin at different positions of a human body. Meanwhile, the integrated device on the flexible transparent substrate can detect skin color change caused by sun exposure.
Fig. 3 shows a flow diagram of a method 300 for manufacturing a micro-LED based skin tone detection device according to one embodiment of the invention. As shown in fig. 3, the method starts with step S310 of depositing an ITO current spreading layer on the surface of an InGaN/GaN epitaxial wafer.
Since the emission spectrum and the response spectrum of the InGaN/GaN multi-quantum well structure overlap, the InGaN/GaN multi-quantum well structure has the dual functions of emitting photons and detecting photons. For the emission end, when a proper driving voltage is loaded, electrons and holes are respectively injected into the InGaN/GaN multiple quantum wells from the n layer and the p layer, and radiation recombination occurs to emit light.
For the detection end, the InGaN/GaN multiple quantum well is capable of absorbing photons and exciting electron-hole pairs, thereby generating photocurrent. Therefore, the micro-LED array is prepared on the same InGaN/GaN epitaxial wafer, wherein the InGaN/GaN epitaxial wafer can adopt transparent substrates such as a sapphire substrate, a gallium nitride (GaN) substrate, a gallium phosphide (GaP) substrate, a silicon carbide (SiC) substrate and the like, and can also adopt non-transparent substrates such as a silicon-based substrate and the like.
Since the silicon substrate facilitates device integration, in one embodiment of the present invention, an epitaxial structure may be grown on the silicon substrate using a chemical vapor deposition (MOCVD) growth process, which may include, in order, a 3.5 μm undoped GaN layer, a 2 μm doped silicon n-GaN layer, a 170nm InGaN/GaN stress buffer layer, a 170nm InGaN/GaN multiple quantum well layer, a 50nm PAlGaN electron blocking layer, and a 150nm doped magnesium p-GaN layer. Then, 30nm ITO (indium tin oxide) is deposited on the surface of the p-GaN layer by a magnetron sputtering or evaporation method to serve as a current expansion layer, and the current expansion layer can improve the luminous efficiency and luminous uniformity of the LED.
Fig. 4 shows a schematic diagram of a first device structure according to an embodiment of the invention. As shown in fig. 4, the first device structure is an InGaN/GaN epitaxial wafer with a deposited current expansion layer, and is a silicon substrate (200), an undoped GaN layer (201), a silicon-doped n-GaN layer (202), a stress buffer layer (203), an InGaN/GaN multiple quantum well layer (204), a PAlGaN electron blocking layer (205), a magnesium-doped p-GaN layer (206), and an ITO current expansion layer (207) from bottom to top.
Step S220 is then performed to etch a predetermined number of pixel cells of a first size and pixel cells of a second size on the surface of the current spreading layer, thereby forming a first mesa structure, wherein the first size is smaller than the second size.
In order to etch two pixel units with different sizes, a first size and a second size of the pixel units in the micro-LED array may be first defined through a first mask plate, so that the first size is smaller than the second size. And then carrying out patterned exposure development and etching on the surface of the current expansion layer through a first mask plate. Specifically, photoresist can be spin-coated on the surface of the current spreading layer, and the current spreading layer can be etched by a wet method, for example, concentrated hydrochloric acid and concentrated nitric acid can be adopted according to a volume ratio of 4:1 wet etching the ITO (207).
Then, by inductively coupled plasma dry etching (ICP) process, in BCl 3 And etching the epitaxial wafer to an n-GaN layer (202) from top to bottom in a mixed gas atmosphere of Ar, wherein the etching depth is about 700nm-1 mu m, a certain distance is reserved between a pixel array of a first size and a pixel array of a second size, and then annealing is performed for 15 minutes in a nitrogen atmosphere at 550 ℃ by using an annealing furnace to form ohmic contact. The micro-LED array mesa structure comprising the first size mesa and the second size mesa is finally obtained.
Fig. 5 shows a schematic view of a first mesa structure according to one embodiment of the present invention. As shown in fig. 5, the first mesa structure of the micro-LED array device includes a first-sized mesa on the left side and a second-sized mesa on the right side, and the pixel cell size of the mesa on the left side is smaller than the pixel cell size of the mesa on the right side. In the embodiment of the invention, in order to enhance the detection effect of the detection end, small-size pixels are used as the light-emitting end, and large-size pixels are used as the detection end.
Next, step S230 is performed to deposit an insulating layer on the micro-LED array mesa structure, and open a hole on the insulating layer, thereby obtaining a second mesa structure. Wherein the insulating layer material can be SiO 2 、Al 2 O 3 、Si 3 N 4 Etc. In one embodiment of the present invention, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process may be used to deposit approximately 300nm of silicon oxide as an insulating protective layer on the micro-LED array mesa surface.
Fig. 6 shows a schematic view of a second mesa structure according to an embodiment of the present invention, where an insulating layer (208) of the second mesa structure surface is deposited on the ITO current spreading layer (207) surface as shown in fig. 6. In order to etch the through holes in the micro-LED array, the size and the range of the through holes can be defined through a second mask plate, and then the SiO is etched through the combination of ICP dry etching and wet etching 2 The insulating layer is perforated.
Specifically, spin-coating photoresist on the surface of the silicon oxide insulating protective layer, irradiating the second mask plate by ultraviolet light, spin-coating photoresist on the surface of the silicon oxide insulating protective layer, and performing CHF (atomic force deposition) by an inductively coupled plasma dry etching (ICP) process 3 And dry etching the device in the gas atmosphere to remove the silicon oxide layer on the surface. The device is then opened by a 40s wet etch, which may be performed using a BOE solution (HF aqueous solution: NH4F aqueous solution=1:6 mixed solution). As shown in fig. 6, the open-hole processed mesa structure exposes the ITO current spreading layer (207) and the n-GaN layer (202).
Subsequently, step S240 is performed to sputter or evaporate a metal layer on the second mesa structure so as to form a positive electrode and a negative electrode at the opening, resulting in a micro-LED array device. Wherein the metal layer material can be Ti/Au or Ti/Al or Cr/Au double-layer electrode, and the excessive metal is removed by lift-off stripping process to form positive electrode and negative electrode.
Fig. 7 shows a schematic structural diagram of a micro-LED array device according to an embodiment of the present invention. As shown in fig. 7, a metal electrode (209) is deposited at the opening to form both ohmic contact and lead electrodes, wherein the metal electrode deposited at the opening on the mesa is a P electrode and the metal electrode deposited at the opening of the recess is an N electrode.
Subsequently, step S250 is performed to transfer the micro-LED array device onto a flexible transparent substrate, and deposit a metal layer on the flexible transparent substrate, thereby obtaining a flexible micro-LED array device.
In an embodiment of the present invention, the substrate of the micro-LED array device may be etched away by a wet etch first, such that the device is held by the anchor structure. The device is wet etched, for example by dilute KOH solution etching. In the corrosion process, KOH solution is placed on a hot plate at 150 ℃, the device is leaned against the bottom of the container, and a magnetic stirrer is added to stir the KOH solution at a certain rotating speed to accelerate the corrosion speed. The device after corrosion is completed is in a suspended state and is fixed only by the anchor structure.
The uv curable glue is then dripped onto the flexible transparent substrate. And fully contacting the prefabricated PDMS transfer head with the micro-LED array device and breaking an anchor structure for fixing the device, so that the device is adhered to the PDMS transfer head. Wherein, the PDMS (polydimethylsiloxane) transfer head can be prepared by the following method: a100 μm epoxy layer was spin-coated on a silicon wafer at 1500 r. Then defining different size open hole patterns for SU-8 cladding layer by ultraviolet lithography, and using the patterns as a mould for manufacturing PDMS transfer head. A layer of 4mm thick PDMS was then spin cast onto this structure and then cured at room temperature and peeled off to give a PDMS transfer head.
Fixing a transfer head on a transfer arm of transfer equipment, aligning a device to be transferred and a microscope on a transfer table, enabling the PDMS transfer head to be in full contact with the device to be transferred by slowly descending the transfer arm, breaking an anchor structure for fixing the device, rapidly lifting the PDMS transfer head, and adhering the device to the PDMS transfer head through Van der Waals force. Next, the PDMS transfer head to which the device was attached was aligned to the uv curable glue position on the flexible transparent substrate, slowly lowered, and slowly lifted off the PDMS transfer head. And then curing the ultraviolet curing adhesive through ultraviolet irradiation for 1min, so that the device is successfully printed on the flexible transparent substrate.
In addition, a metal electrode is required to be grown on the flexible substrate, photoresist is coated on the surface of the flexible transparent substrate in a spin mode, the second mask plate is irradiated by ultraviolet light, and a metal layer is deposited to form a positive electrode and a negative electrode, so that the flexible micro-LED array device is obtained. For example, 50/250 nmTi/Au may be sputtered using a magnetron sputtering process and then the outer lead electrode is formed via a lift-off process.
And transferring the micro-LED array device of the original silicon substrate onto a transparent flexible substrate by a transfer printing technology, wherein the flexible substrate is made of polyimide. In one embodiment of the invention, the process is used for transferring the emitting end micro-LED with the size of 60-100 mu m and the detecting end LED with the size of 200-300 mu m on the transparent flexible substrate, wherein the distance between the emitting end and the detecting end is 1-2mm, so that the intensity of an optical signal directly transmitted to the detecting end by the emitting end can be reduced, and the intensity of an optical signal reflected to the detecting end through the skin surface can be ensured.
Finally, step S260 is performed, where a positive bias voltage is applied to the first size pixel unit to drive the first size pixel unit to emit an optical signal, and a zero voltage or a negative bias voltage is applied to the second size pixel unit to convert the detected optical signal intensity into a photocurrent.
Specifically, the external lead electrode of the manufactured integrated device and the metal pad of the flexible circuit board can be electrically interconnected by conductive silver paste or vertical conductive paste. The small-size pixels are used as emitting ends, the large-size pixels are used as detecting ends, the emitting ends are connected with a voltage source, the emitting ends (the first micro-LED array) convert electric signals into optical signals and emit the optical signals to the surface of the skin to be detected, and as the reflectivities of the skin surfaces with different colors are different, the optical signals reflected by the skin received by the detecting ends (the second micro-LED array) are different, and the absorption photon excitation electron-hole pairs of InGaN/GaN multiple quantum wells are correspondingly different, so that different photocurrent signals are generated.
In one embodiment of the invention, a micro transimpedance amplifier can be integrated in a flexible circuit board connected with the detection end, the photocurrent signal obtained by the detection end is amplified and converted into a photovoltage signal, and then the photovoltage signal is converted into a skin color signal by connecting with a micro-control circuit, and the skin color signal is displayed by connecting with a micro-LED display screen.
And attaching the flexible monolithic integrated device on the surface of the skin, wherein photocurrents generated by large-size pixel points serving as detection ends correspond to the light signal intensities reflected by the skin with different colors one by one. In practical application, the device can be calibrated first. Under normal sunlight environment, the integrated device is placed on a standard skin color chart. And (3) applying a driving voltage of 5V to the small-size transmitting end, applying a bias voltage of-5V to the large-size detecting end, comparing the magnitudes of photocurrents generated by different skin colors reading detecting ends on the color card, thus obtaining the value of the photocurrent corresponding to each standard skin color, and establishing a model. And then, attaching the integrated device to the skin surface, and comparing the photocurrent value obtained by the detection end with a standard skin color model to obtain the measured skin color.
In addition, the micro-LED display array can be integrated on a single-chip device, the photocurrent is amplified and converted into a photovoltage signal through a micro transimpedance amplifier, and then the measured skin color information is displayed through a micro control circuit and the micro-LED integrated display array.
The micro-LED-based integrated device integrating light emission and detection is small in structure and simple in preparation process, and skin color detection can be carried out on the skin of different parts of a human body. Meanwhile, the device is transferred onto the transparent flexible substrate by the transfer process, so that the device can be better attached to human skin, and skin color change caused by sun exposure of the skin can be detected. Therefore, the invention can not only meet the fields of prevention of partial chronic diseases, allergy detection and the like, but also be suitable for skin color detection in the fields of skin care cosmetics and the like.
According to the scheme, skin color detection devices based on micro-LEDs can detect skin colors of different human body parts in real time, the principle of photon absorption and photon emission can be realized based on InGaN/GaN quantum wells, arrays with two pixels with different sizes are prepared on an epitaxial wafer by the same process, and micro-LEDs with different sizes are transferred onto the same transparent flexible substrate by transfer printing technology, so that the device can realize the dual functions of an emitting end and a receiving end under different driving conditions.
The small-size pixel is used as the receiving end to generate photocurrent corresponding to the reflectivity of different skins, and the change of different skin colors is reflected by the magnitude of the photocurrent generated by the receiving end, so that the effect of monitoring the skin color in real time is achieved.
Compared with skin color detection equipment integrated by a traditional large-size LED and a silicon photoelectric detector, the skin color detection device and system provided by the invention have the advantages of simple and compact structure, small size, flexibility, simple preparation process, convenience in wearing when devices are attached to skin, and capability of detecting the slight changes of skin colors at different parts of a human body in real time and detecting the changes of skin colors under sunlight.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules or units or components of the devices in the examples disclosed herein may be arranged in a device as described in this embodiment, or alternatively may be located in one or more devices different from the devices in this example. The modules in the foregoing examples may be combined into one module or may be further divided into a plurality of sub-modules.
Those skilled in the art will appreciate that the modules in the apparatus of the embodiments may be adaptively changed and disposed in one or more apparatuses different from the embodiments. The modules or units or components of the embodiments may be combined into one module or unit or component and, furthermore, they may be divided into a plurality of sub-modules or sub-units or sub-components. Any combination of all features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be used in combination, except insofar as at least some of such features and/or processes or units are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.
Furthermore, some of the embodiments are described herein as methods or combinations of method elements that may be implemented by a processor of a computer system or by other means of performing the functions. Thus, a processor with the necessary instructions for implementing the described method or method element forms a means for implementing the method or method element. Furthermore, the elements of the apparatus embodiments described herein are examples of the following apparatus: the apparatus is for carrying out the functions performed by the elements for carrying out the objects of the invention.
As used herein, unless otherwise specified the use of the ordinal terms "first," "second," "third," etc., to describe a general object merely denote different instances of like objects, and are not intended to imply that the objects so described must have a given order, either temporally, spatially, in ranking, or in any other manner.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of the above description, will appreciate that other embodiments are contemplated within the scope of the invention as described herein. Furthermore, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter. Accordingly, many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the appended claims. The disclosure of the present invention is intended to be illustrative, but not limiting, of the scope of the invention, which is defined by the appended claims.
Claims (10)
1. The skin color detection device based on the micro-LEDs comprises an emission module, a detection module and a driving module, and is characterized in that the emission module and the detection module are respectively a first micro-LED array and a second micro-LED array which are prepared by growing on the same InGaN/GaN epitaxial wafer, the emission module and the detection module are packaged on a flexible circuit board, and the driving module is suitable for applying forward bias voltage to the emission module so that the emission module can emit light signals; the driving module is suitable for applying negative bias voltage to the detection module so that the detection module can obtain the photocurrent through detecting the intensity of the optical signal reflected by the skin.
2. The skin tone detection device of claim 1, wherein the emitting module and the detecting module are spaced apart a predetermined distance, the first micro-LED array comprises a plurality of pixel cells of a first size, and the second micro-LED array comprises a plurality of pixel cells of a second size, the first size being smaller than the second size.
3. A skin color detection system based on micro-LEDs, comprising a skin color detection device as claimed in any one of claims 1-2, a transimpedance amplifier, a control circuit and a micro-LED display screen, wherein the transimpedance amplifier is adapted to convert photocurrent detected by the detection module into photovoltage, the control circuit is adapted to convert the photovoltage signal into corresponding skin color information, and the micro-LED display screen is adapted to display the skin color information.
4. A method for preparing a micro-LED-based skin tone detection device, the method comprising:
depositing an ITO current expansion layer on the surface of the InGaN/GaN epitaxial wafer;
etching a preset number of first-size pixel units and second-size pixel units on the surface of the current expansion layer to form a first mesa structure, wherein the first size is smaller than the second size;
depositing an insulating layer on the first mesa structure, and opening holes in the insulating layer to obtain a second mesa structure;
depositing a metal layer on the second mesa structure so as to form a P electrode and an N electrode at the opening, thereby obtaining a micro-LED array device;
and transferring the micro-LED array device to a flexible transparent substrate, and depositing a metal layer on the flexible transparent substrate to obtain the flexible micro-LED array device.
5. The method for manufacturing a skin tone detection device according to claim 4, wherein the InGaN/GaN epitaxial wafer comprises a substrate, and an undoped GaN layer, an n-GaN layer, a stress buffer layer, an InGaN/GaN multiple quantum hydrazine layer, an electron blocking layer and a p-GaN layer sequentially grown on the substrate, the substrate of the InGaN/GaN epitaxial wafer is a silicon substrate, the step of etching a predetermined number of first-size pixel units and second-size pixel units on the surface of the current spreading layer, and the step of forming the first mesa structure comprises:
defining a first size of a pixel unit in a first micro-LED array and a second size of a pixel unit in a second micro-LED array through a first mask plate;
spin-coating photoresist on the surface of the current expansion layer, irradiating the first mask plate by ultraviolet light, etching the current expansion layer by a wet method, and etching the epitaxial wafer to an n-type GaN layer from top to bottom by an inductively coupled plasma dry etching process to obtain a first mesa structure comprising a first-size mesa and a second-size mesa, wherein the first-size mesa and the second-size mesa are spaced by a preset distance.
6. The method of claim 4, wherein the steps of depositing an insulating layer on the first mesa structure and opening the insulating layer to obtain a second mesa structure include:
defining the position and the size of the opening through a second mask plate;
spin-coating photoresist on the surface of the insulating layer, irradiating the second mask plate by ultraviolet light, and perforating the first mesa structure by wet etching and inductively coupled plasma dry etching processes to expose the current expansion layer and the n-GaN layer.
7. The method of manufacturing a skin tone detector according to claim 6, wherein the insulating layer is made of SiO 2 、Al 2 O 3 、Si 3 N 4 The inductively coupled plasma etching adopts CHF3 gas for dry etching, and the wet etching uses BOE solution for etching.
8. The method of claim 5, wherein the step of depositing a metal layer on the second mesa structure to form P-electrodes and N-electrodes at the openings to obtain micro-LED array devices comprises:
and spin-coating photoresist on the surface of the second mesa structure, irradiating the second mask plate by ultraviolet light, evaporating or sputtering double-layer metal, forming a P electrode at an opening exposing the current expansion layer by a stripping process, and forming an N electrode at an opening exposing the N-GaN layer.
9. The method of claim 8, wherein the double-layer metal is any one of Ti/Au, ti/Al, cr/Au.
10. The method of manufacturing a skin tone detection apparatus according to claim 4, wherein the step of transferring the micro-LED array device onto a flexible transparent substrate and depositing a metal layer on the flexible transparent substrate to obtain the flexible micro-LED array device comprises:
etching the substrate of the micro-LED array device by wet etching to fix the device by an anchor structure;
dropping ultraviolet curing glue on the flexible transparent substrate;
fully contacting a prefabricated PDMS transfer head with the micro-LED array device and breaking an anchor structure for fixing the device, so that the device is adhered to the PDMS transfer head;
aligning the PDMS transfer head of the adhesive device with ultraviolet curing glue on the flexible transparent substrate to separate the device from the PDMS transfer head;
irradiating ultraviolet curing glue by ultraviolet light to print the device on the flexible transparent substrate;
and spin-coating photoresist on the surface of the flexible transparent substrate, irradiating the second mask plate by ultraviolet light, and depositing a metal layer to form a positive electrode and a negative electrode, thereby obtaining the flexible micro-LED array device.
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