CN115996625A - Room temperature antiferromagnetic memory device and preparation method thereof - Google Patents
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Abstract
The invention provides a room temperature antiferromagnetic memory device and a preparation method thereof, wherein the room temperature antiferromagnetic memory device comprises: a substrate and an antiferromagnetic oxide functional layer on one side of the substrate. The antiferromagnetic oxide functional layer in the room temperature antiferromagnetic memory device provided by the invention utilizes the characteristics of the antiferromagnetic oxide material such as THz spin dynamics characteristic frequency, insensitivity to external magnetic field and the like, so that the room temperature antiferromagnetic memory device has the advantages of high response speed and strong magnetic field interference resistance; and then, the invention uses an external electric field to replace a magnetic field or current to apply on the substrate to generate piezoelectric stress, and the antiferromagnetic oxide functional layer changes the orientation of the antiferromagnetic spin axis based on the piezoelectric stress, thereby affecting the anisotropic magnetoresistance effect of the antiferromagnetic oxide material, so that the resistance in the antiferromagnetic oxide functional layer generates different nonvolatile resistance states, and based on the different nonvolatile resistance states, the joule heat can be effectively avoided, and the low-energy consumption information storage is realized.
Description
Technical Field
The invention relates to the field of nonvolatile magnetic memory devices, in particular to a room temperature antiferromagnetic memory device and a preparation method thereof, and especially relates to an oxide-based electric field-controlled room temperature antiferromagnetic memory device and a preparation method thereof.
Background
As human beings have entered the digital age, the global digital information storage amount has been explosive growth, and information technologies such as big data, cloud computing, the internet and the like have also been rapidly developed, so that higher requirements are put on the performances such as the speed, the energy consumption, the density and the stability of the information storage. To date, more than 90% of information is recorded in a hard disk and a data center as digitized data by means of magnetic recording, the information writing process of magnetic storage is completed by a magnetic head, and the magnetic head usually adopts ferromagnetic materials, and current is introduced into a small conductive coil to generate a magnetic field so as to change the magnetization intensity of the ferromagnetic materials, so that the magnetic storage is realized, but the storage device of the ferromagnetic materials has the defects of high energy consumption, low response speed, low integration density and the like, so that the searching and developing of the magnetic storage device with low energy consumption, high response speed and high integration density has important significance for the development of information technology and the reduction of energy consumption.
Disclosure of Invention
In view of the above, the present invention provides a room temperature antiferromagnetic memory device and a method for fabricating the same, which comprises the following steps:
a room temperature antiferromagnetic memory device, the room temperature antiferromagnetic memory device comprising:
a substrate;
an antiferromagnetic oxide functional layer on one side of the substrate;
the anti-ferromagnetic oxide functional layer is made of anti-ferromagnetic oxide material, the substrate generates piezoelectric stress based on an external electric field, and the anti-ferromagnetic oxide functional layer changes the orientation of an anti-ferromagnetic spin axis based on the piezoelectric stress, so that the resistance in the anti-ferromagnetic oxide functional layer generates different nonvolatile resistance states.
Preferably, in the room temperature antiferromagnetic memory device, the resistance in the antiferromagnetic oxide functional layer generates different nonvolatile resistance states, including: a high resistance state and a low resistance state;
the high resistance state is used to store a "1" in the binary data and the low resistance state is used to store a "0" in the binary data.
Preferably, in the room temperature antiferromagnetic memory device, the material of the substrate is a ferroelectric oxide material.
Preferably, in the room temperature antiferromagnetic memory device described above, the ferroelectric oxide material is BaTiO 3 Materials or BiFeO 3 Material or (1-X) PbMg 1/3 Nb 2/3 O 3 -XPbTiO 3 The material, wherein the value range of X is 0-X<1。
Preferably, in the room temperature antiferromagnetic memory device described above, the antiferromagnetic oxide material is RuO 2-Y The material, wherein the value range of Y is 0 to less than or equal to Y<2。
A method of manufacturing a room temperature antiferromagnetic memory device for manufacturing the room temperature antiferromagnetic memory device of any one of the above, the method comprising:
providing a substrate;
forming an antiferromagnetic oxide functional layer on one side of the substrate;
the anti-ferromagnetic oxide functional layer is made of anti-ferromagnetic oxide material, the substrate generates piezoelectric stress based on an external electric field, and the anti-ferromagnetic oxide functional layer changes the orientation of an anti-ferromagnetic spin axis based on the piezoelectric stress, so that the resistance in the anti-ferromagnetic oxide functional layer generates different nonvolatile resistance states.
Preferably, in the above method for manufacturing a room temperature antiferromagnetic memory device, the forming an antiferromagnetic oxide functional layer on one side of the substrate includes:
and forming the antiferromagnetic oxide functional layer on one side of the substrate by adopting a thin film deposition process.
Preferably, in the method for manufacturing a room temperature antiferromagnetic memory device, the forming the antiferromagnetic oxide functional layer on one side of the substrate using a thin film deposition process includes:
and forming the antiferromagnetic oxide functional layer on one side of the substrate by adopting a laser pulse deposition process or a magnetron sputtering deposition process or an electron beam evaporation process.
Preferably, the room temperature antiferromagnetic memory device is fabricatedIn the preparation method, when the antiferromagnetic oxide functional layer is formed on one side of the substrate by adopting the laser pulse deposition process, the laser pulse deposition process is based on a laser pulse deposition system, and the vacuum degree of the back bottom of a deposition cavity of the laser pulse deposition system is 1.5x10 -8 Torr, the distance between the target material of the laser pulse deposition system and the substrate is 60mm, the laser of the laser pulse deposition system is a KrF excimer gas laser, the laser wavelength of the laser is 248nm, and the laser energy density of the laser is 1.6J/cm 2 The laser repetition frequency of the laser is 10Hz.
Preferably, in the above method for manufacturing a room temperature antiferromagnetic memory device, when the antiferromagnetic oxide functional layer is formed on one side of the substrate using the laser pulse deposition process, the process parameters of the laser pulse deposition process include:
the temperature at the time of forming the antiferromagnetic oxide layer was 550℃and the oxygen gas pressure was 10 -3 And the temperature rising rate of the Torr when the antiferromagnetic oxide functional layer is formed is 20 ℃/min, and the temperature reducing rate after the antiferromagnetic oxide functional layer is formed is 10 ℃/min.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a room temperature antiferromagnetic memory device and a preparation method thereof, wherein the room temperature antiferromagnetic memory device comprises: a substrate; an antiferromagnetic oxide functional layer on one side of the substrate; the anti-ferromagnetic oxide functional layer is made of anti-ferromagnetic oxide material, the substrate generates piezoelectric stress based on an external electric field, and the anti-ferromagnetic oxide functional layer changes the orientation of an anti-ferromagnetic spin axis based on the piezoelectric stress, so that the resistance in the anti-ferromagnetic oxide functional layer generates different nonvolatile resistance states. The antiferromagnetic oxide functional layer in the room temperature antiferromagnetic memory device provided by the invention utilizes the characteristics of the antiferromagnetic oxide material such as THz spin dynamics characteristic frequency, insensitivity to external magnetic field and the like, so that the room temperature antiferromagnetic memory device has the advantages of high response speed and strong magnetic field interference resistance; and secondly, the invention utilizes an external electric field to replace a magnetic field or current to apply on the substrate to generate piezoelectric stress, and the antiferromagnetic oxide functional layer changes the orientation of an antiferromagnetic spin axis based on the piezoelectric stress so as to influence the anisotropic magnetoresistance effect of the antiferromagnetic oxide material, thereby enabling the resistor in the antiferromagnetic oxide functional layer to generate different nonvolatile resistance states, effectively avoiding joule heat based on the different nonvolatile resistance states and realizing low-energy consumption information storage.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a room temperature antiferromagnetic memory device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a room temperature antiferromagnetic memory device according to an embodiment of the invention;
FIG. 3 is a schematic flow chart of a method for fabricating a room temperature antiferromagnetic memory device according to an embodiment of the invention;
FIG. 4 is a graph showing the X-ray diffraction results of a room temperature antiferromagnetic memory device according to an embodiment of the invention;
FIG. 5 is a diagram of measurement results of exchange coupling fields of a multi-layer structure based on a room temperature antiferromagnetic memory device according to an embodiment of the invention;
FIG. 6 is a graph showing the measurement results of leakage current and resistance of a room temperature antiferromagnetic memory device in a voltage range of-200V to +200V according to an embodiment of the present invention;
FIG. 7 is a graph showing the measurement results of leakage current and resistance of a room temperature antiferromagnetic memory device in a voltage range of-200V to +65V according to an embodiment of the present invention;
FIG. 8 is a graph showing the resistance measurement results of a room temperature antiferromagnetic memory device according to an embodiment of the invention, in which the applied electric field is removed after the device is excited by different applied electric fields.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Based on the description of the background technology, the inventor finds that in the inventive process of the invention, the memory device adopting the ferromagnetic material has the defects of high energy consumption, low response speed, low integration density and the like, so the embodiment of the invention provides a room-temperature antiferromagnetic memory device and a preparation method thereof, and the memory device has the advantages of low energy consumption, high response speed, high integration density and the like.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a room temperature antiferromagnetic memory device according to an embodiment of the present invention, and in combination with fig. 1, the room temperature antiferromagnetic memory device includes: a substrate 1; an antiferromagnetic oxide functional layer 2 located on one side of the substrate 1; wherein the material of the antiferromagnetic oxide functional layer 2 is antiferromagnetic oxide material, the substrate 1 generates piezoelectric stress based on the applied electric field, and the antiferromagnetic oxide functional layer 2 changes the orientation of the antiferromagnetic spin axes based on the piezoelectric stress, so that the resistance in the antiferromagnetic oxide functional layer 2 generates different nonvolatile resistance states.
Specifically, in the embodiment of the present invention, the antiferromagnetic oxide functional layer 2 includes, but is not limited to, a thin film of antiferromagnetic oxide material, and the room temperature antiferromagnetic memory device is a heterostructure composed of a substrate 1 and the thin film of antiferromagnetic oxide material, and the room temperature antiferromagnetic memory device may be an all antiferromagnetic tunnel junction device with room temperature magnetoresistance up to 100%; in addition, as shown in fig. 1, the specific order of the structural components of the room temperature antiferromagnetic memory device may be the substrate 1 and the antiferromagnetic oxide functional layer 2 sequentially from bottom to top, or as shown in fig. 2, fig. 2 is a second schematic structural diagram of another room temperature antiferromagnetic memory device provided in the embodiment of the invention, and the specific order of the structural components of the room temperature antiferromagnetic memory device may also be the antiferromagnetic oxide functional layer 2 and the substrate 1 sequentially from bottom to top.
As can be seen from the above description, the room temperature antiferromagnetic memory device provided by the embodiments of the present invention includes: a substrate 1; an antiferromagnetic oxide functional layer 2 located on one side of the substrate 1; wherein the material of the antiferromagnetic oxide functional layer 2 is antiferromagnetic oxide material, the substrate 1 generates piezoelectric stress based on the applied electric field, and the antiferromagnetic oxide functional layer 2 changes the orientation of the antiferromagnetic spin axes based on the piezoelectric stress, so that the resistance in the antiferromagnetic oxide functional layer 2 generates different nonvolatile resistance states. The antiferromagnetic oxide functional layer 2 in the room temperature antiferromagnetic memory device provided by the embodiment of the invention utilizes the characteristics of antiferromagnetic oxide material such as THz spin dynamics characteristic frequency, insensitivity to external magnetic field and the like, so that the room temperature antiferromagnetic memory device has the advantages of high response speed and strong magnetic field interference resistance; secondly, in the embodiment of the invention, an external electric field is utilized to replace a magnetic field or current to be applied on the substrate 1 to generate piezoelectric stress, the antiferromagnetic oxide functional layer 2 changes the orientation of an antiferromagnetic spin axis based on the piezoelectric stress, and further the anisotropic magnetoresistance effect of antiferromagnetic oxide materials is affected, so that different nonvolatile resistance states are generated in the resistance of the antiferromagnetic oxide functional layer 2, joule heat can be effectively avoided based on the different nonvolatile resistance states, and low-energy consumption information storage is realized; in addition, the room temperature antiferromagnetic memory device provided by the embodiment of the invention can be combined with various semiconductor devices and spin electronic devices, so that the room temperature antiferromagnetic memory device has a pushing effect on the application of information devices with the advantages of quick response, high reliability, low power consumption and the like.
Optionally, in another embodiment of the present invention, a structure of the room temperature antiferromagnetic memory device is further described in detail as follows:
the resistance in the antiferromagnetic oxide functional layer 2 produces different non-volatile resistance states, including: a high resistance state and a low resistance state; the high resistance state is used to store a "1" in the binary data and the low resistance state is used to store a "0" in the binary data.
Specifically, in the embodiment of the invention, the resistance of the antiferromagnetic oxide functional layer 2 is regulated and controlled by using an external electric field instead of a magnetic field or current, so that the change of a nonvolatile resistance state is realized, 1 is written when the nonvolatile resistance state is in a high resistance state, 0 is written when the nonvolatile resistance state is in a low resistance state, and the combination of different binary data can be obtained by changing the nonvolatile resistance state, so that the nonvolatile information storage is realized.
The material of the substrate 1 is a ferroelectric oxide material; the ferroelectric oxide material is BaTiO 3 Materials or BiFeO 3 Material or (1-X) PbMg 1/3 Nb 2/3 O 3 -XPbTiO 3 The material, wherein the value range of X is 0-X<1。
Specifically, in an embodiment of the present invention, the ferroelectric oxide material includes, but is not limited to, baTiO 3 Material, biFeO 3 Material or (1-X) PbMg 1/3 Nb 2/3 O 3 -XPbTiO 3 One of the materials, wherein X is expressed as a mole percentage, in embodiments of the invention the value of X is preferably 0.ltoreq.X<Values in the range of 0.9.
The antiferromagnetic oxide material is RuO 2-Y The material, wherein the value range of Y is 0 to less than or equal to Y<2。
Specifically, in embodiments of the present invention, the antiferromagnetic oxide material includes, but is not limited to RuO 2-Y Materials and the like, wherein Y is expressed as mole percent, and the value of Y in the embodiments of the present invention is preferably 0.ltoreq.Y<Values in the range of 0.19.
Optionally, according to the above embodiment of the present invention, there is further provided a method for manufacturing a room temperature antiferromagnetic memory device according to the above embodiment, where the room temperature antiferromagnetic memory device is illustrated by taking a room temperature antiferromagnetic memory device sequentially including a substrate 1 and an antiferromagnetic oxide functional layer 2 from bottom to top, referring to fig. 3, and fig. 3 is a schematic flow diagram of a method for manufacturing a room temperature antiferromagnetic memory device according to the embodiment of the present invention, and in combination with fig. 3, the method includes:
s100, providing a substrate 1.
Specifically, in this step S100, the material of the substrate 1 includes, but is not limited to, baTiO 3 Material, biFeO 3 Material or (1-X) PbMg 1/3 Nb 2/3 O 3 -XPbTiO 3 One of the materials, wherein X is expressed as a mole percentage, in embodiments of the invention the value of X is preferably 0.ltoreq.X<Values in the range of 0.9.
S200, forming an antiferromagnetic oxide functional layer 2 on one side of the substrate 1; wherein the material of the antiferromagnetic oxide functional layer 2 is antiferromagnetic oxide material, the substrate 1 generates piezoelectric stress based on the applied electric field, and the antiferromagnetic oxide functional layer 2 changes the orientation of the antiferromagnetic spin axes based on the piezoelectric stress, so that the resistance in the antiferromagnetic oxide functional layer 2 generates different nonvolatile resistance states.
Specifically, in this step S200, the antiferromagnetic oxide functional layer 2 includes, but is not limited to, a thin film of antiferromagnetic oxide material including, but not limited to RuO 2-Y Materials and the like, wherein Y is expressed as mole percent, and the value of Y in the embodiments of the present invention is preferably 0.ltoreq.Y<Values in the range of 0.19.
The forming of the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 includes: forming the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a thin film deposition process; the forming the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a thin film deposition process includes: the antiferromagnetic oxide functional layer 2 is formed on one side of the substrate 1 using a laser pulse deposition process or a magnetron sputtering deposition process or an electron beam evaporation process.
Specifically, in this step S200, including but not limited to forming the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a laser pulse deposition process or a magnetron sputtering deposition process or an electron beam evaporation process, the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a laser pulse deposition process is described as a preferred embodiment in the present embodiment.
When the antiferromagnetic oxide functional layer 2 is formed on one side of the substrate 1 using the laser pulse deposition process, the laser pulse deposition process is based on a laser pulse deposition system having a vacuum degree of 1.5x10 at the bottom of the deposition chamber -8 Torr, the distance between the target material of the laser pulse deposition system and the substrate 1 is 60mm, the laser of the laser pulse deposition system is a KrF excimer gas laser, the laser wavelength of the laser is 248nm, and the laser energy density of the laser is 1.6J/cm 2 The laser repetition frequency of the laser is 10Hz.
When the antiferromagnetic oxide functional layer 2 is formed on one side of the substrate 1 using the laser pulse deposition process, the process parameters of the laser pulse deposition process include: the temperature at the time of forming the antiferromagnetic oxide layer 2 was 550℃and the oxygen gas pressure was 10 -3 The temperature rising rate of Torr when the antiferromagnetic oxide functional layer 2 is formed is 20 ℃/min, and the temperature reducing rate after the antiferromagnetic oxide functional layer 2 is formed is 10 ℃/min.
Based on the room temperature antiferromagnetic memory device and the method for fabricating the same as described in the above embodiments, the embodiment of the invention selects 0.7PbMg oriented by (100) 1/3 Nb 2/3 O 3 -0.3PbTiO 3 Substrate 1 of material and RuO with a thickness of 27nm 2 A series of tests were performed on room temperature antiferromagnetic memory devices composed of antiferromagnetic oxide functional layer 2 of material, wherein the antiferromagnetic oxide functional layer 2 was formed on the substrate 1 using a laser pulse deposition process.
In order to demonstrate the high quality and effectiveness of forming the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a laser pulse deposition process, the room temperature antiferromagnetic memory device described above was first measured by a single crystal X-ray diffractometer as shown in fig. 4, fig. 4 is a graph of the X-ray diffraction results of a room temperature antiferromagnetic memory device according to an embodiment of the invention, wherein the ordinate is expressed as the intensity of X-ray diffraction, the abscissa is expressed as the incident angle of X-rays, and PMN-PT is expressed as 0.7PbMg 1/3 Nb 2/ 3 O 3 -0.3PbTiO 3 Substrate 1 of Material, ruO 2 Denoted as RuO 2 An antiferromagnetic oxide functional layer 2 of material, as can be seen from the X-ray diffraction result diagram, the antiferromagnetic oxide functional layer 2 deposited on the (100) oriented substrate 1 is an epitaxial single crystal, the orientation of the antiferromagnetic oxide functional layer 2 is (110); secondly, based on the structure of the room temperature antiferromagnetic memory device, soft magnetic Co with the thickness of 5nm is sequentially formed on one side of the antiferromagnetic oxide functional layer 2 away from the substrate 1 90 Fe 10 The film and the simple substance Pt film with the thickness of 2nm form a multi-film layer structure, wherein the soft magnetic Co of the multi-film layer structure 90 Fe 10 The film and the simple substance Pt film are prepared by a direct current magnetron sputtering system, and the vacuum degree of the back bottom of a deposition cavity of the direct current magnetron sputtering system is 7.5 multiplied by 10 -9 Torr, the system is forming soft magnetic Co 90 Fe 10 The deposition power of the film is 90W, the air pressure of the argon is 3mTorr, the deposition power of the film is 30W, and the air pressure of the argon is 3mTorr; referring to fig. 5, fig. 5 is a diagram of measurement results of an exchange coupling field of a multi-layer structure formed by an antiferromagnetic memory device at room temperature according to an embodiment of the present invention, fig. 5 is a diagram of measurement results of an exchange coupling field of the multi-layer structure within a temperature range of 50K to 300K, an ordinate thereof is denoted as an exchange coupling field (Oe), and an abscissa thereof is denoted as a temperature (K), from which it can be known that the exchange coupling field of the multi-layer structure is significantly larger than that of only soft magnetic Co 90 Fe 10 Coercive field of the film structure and exchange coupling field of the multi-film structure are obviously increased along with the reduction of the measured temperature, and the structureThe high quality and effectiveness of forming the antiferromagnetic oxide functional layer 2 on one side of the substrate 1 using a laser pulse deposition process has been demonstrated.
In addition, the surfaces of the substrate 1 and the antiferromagnetic oxide functional layer 2 of the room temperature antiferromagnetic memory device are connected with 4 wires in a standard four-wire method connection mode by utilizing an ultrasonic wire bonding machine, silver colloid is coated on the surface of one side of the antiferromagnetic oxide functional layer 2, which is far away from the substrate 1, to serve as a bottom electrode, and 1 wire is connected with the bottom electrode by utilizing the ultrasonic wire bonding machine to serve as a positive electrode of gate voltage, wherein the wire is made of aluminum wires with the diameter of 30 mu m, and after the wires are connected, experimental tests of resistance in the antiferromagnetic oxide functional layer 2 with the gate voltage regulation and control are carried out at room temperature; as shown in FIG. 6, FIG. 6 is a graph showing the measurement results of leakage current and resistance of a room temperature antiferromagnetic memory device in a voltage range of-200V to +200V, wherein the upper half of FIG. 6 is an image of the variation of leakage current with gate voltage, and two peaks of leakage current in the image can prove that the substrate 1 is subjected to polarization inversion due to the application of gate voltage, so that piezoelectric stress is generated; the lower half of fig. 6 shows an image of the resistance changing with the gate voltage, and since the resistance in the antiferromagnetic oxide functional layer 2 is very sensitive to the gate voltage, the resistance shows an asymmetric butterfly hysteresis curve with the change of the gate voltage, the magnitude change of the gate voltage regulating resistance is 0.1% at the maximum, and when the gate voltage becomes zero, the high resistance state and the low resistance state in the antiferromagnetic oxide functional layer 2 still exist; then, a unipolar resistor inversion regulation mode is adopted, so that the gate voltage is circularly changed from-200V to +65V, and thus the film rupture can be effectively avoided, as shown in fig. 7, fig. 7 is a graph of the measurement results of the leakage current and the resistance of the room temperature antiferromagnetic memory device in the voltage range of-200V to +65V, and the graph of the measurement results shows that the unipolar resistor inversion regulation mode can obtain a nonvolatile high-resistance state and a nonvolatile low-resistance state similar to those in fig. 6, so that the effectiveness and the feasibility of the resistance in the electric field regulation antiferromagnetic oxide functional layer 2 are further illustrated.
Finally, in order to detect the stability of the non-volatile resistance state, different external electric fields are applied to the room temperature antiferromagnetic memory device to excite the room temperature antiferromagnetic memory device, then the external electric fields are removed, and the resistance measurement is carried out by using a standard four-wire method, so that a junction resistance signal of the room temperature antiferromagnetic memory device is obtained; as shown in FIG. 8, FIG. 8 is a graph of the resistance measurement result of the room temperature antiferromagnetic memory device according to the embodiment of the invention, wherein the applied electric field is removed after the room temperature antiferromagnetic memory device is excited by different applied electric fields, and FIG. 8 is a graph of the resistance measurement result of the room temperature antiferromagnetic memory device, wherein the applied electric field is removed after the room temperature antiferromagnetic memory device is excited by different applied electric fields within the time range of 0-154 s, and the resistance measurement result graph shown in FIG. 8 shows that the resistance state after the applied electric field is removed after the room temperature antiferromagnetic memory device is excited by different applied electric fields is very stable and has no obvious change with time, so that the room temperature antiferromagnetic memory device can be used as a stable and reliable nonvolatile memory device.
The above-mentioned room temperature antiferromagnetic memory device and its preparation method provided by the invention are described in detail, and specific examples are applied herein to illustrate the principle and implementation of the invention, and the above examples are only used to help understand the method and core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A room temperature antiferromagnetic memory device, said room temperature antiferromagnetic memory device comprising:
a substrate;
an antiferromagnetic oxide functional layer on one side of the substrate;
the anti-ferromagnetic oxide functional layer is made of anti-ferromagnetic oxide material, the substrate generates piezoelectric stress based on an external electric field, and the anti-ferromagnetic oxide functional layer changes the orientation of an anti-ferromagnetic spin axis based on the piezoelectric stress, so that the resistance in the anti-ferromagnetic oxide functional layer generates different nonvolatile resistance states.
2. The room temperature antiferromagnetic memory device of claim 1, wherein the resistances in said antiferromagnetic oxide functional layer create different nonvolatile resistance states comprising: a high resistance state and a low resistance state;
the high resistance state is used to store a "1" in the binary data and the low resistance state is used to store a "0" in the binary data.
3. The room temperature antiferromagnetic memory device of claim 1, wherein said substrate material is a ferroelectric oxide material.
4. The room temperature antiferromagnetic memory device of claim 3, wherein said ferroelectric oxide material is BaTiO 3 Materials or BiFeO 3 Material or (1-X) PbMg 1/3 Nb 2/3 O 3 -XPbTiO 3 The material, wherein the value range of X is 0-X<1。
5. The room temperature antiferromagnetic memory device of claim 1, wherein said antiferromagnetic oxide material is RuO 2-Y The material, wherein the value range of Y is 0 to less than or equal to Y<2。
6. A method of making a room temperature antiferromagnetic memory device according to any one of claims 1-5, said method comprising:
providing a substrate;
forming an antiferromagnetic oxide functional layer on one side of the substrate;
the anti-ferromagnetic oxide functional layer is made of anti-ferromagnetic oxide material, the substrate generates piezoelectric stress based on an external electric field, and the anti-ferromagnetic oxide functional layer changes the orientation of an anti-ferromagnetic spin axis based on the piezoelectric stress, so that the resistance in the anti-ferromagnetic oxide functional layer generates different nonvolatile resistance states.
7. The method of manufacturing according to claim 6, wherein forming an antiferromagnetic oxide functional layer on one side of the substrate comprises:
and forming the antiferromagnetic oxide functional layer on one side of the substrate by adopting a thin film deposition process.
8. The method of claim 7, wherein forming the antiferromagnetic oxide functional layer on one side of the substrate using a thin film deposition process comprises:
and forming the antiferromagnetic oxide functional layer on one side of the substrate by adopting a laser pulse deposition process or a magnetron sputtering deposition process or an electron beam evaporation process.
9. The method according to claim 8, wherein when the antiferromagnetic oxide functional layer is formed on one side of the substrate by using the laser pulse deposition process, the laser pulse deposition process is based on a laser pulse deposition system having a vacuum degree of 1.5x10 at a deposition chamber back bottom -8 Torr, the distance between the target material of the laser pulse deposition system and the substrate is 60mm, the laser of the laser pulse deposition system is a KrF excimer gas laser, the laser wavelength of the laser is 248nm, and the laser energy density of the laser is 1.6J/cm 2 The laser repetition frequency of the laser is 10Hz.
10. The method of claim 8, wherein when the antiferromagnetic oxide functional layer is formed on one side of the substrate using the laser pulse deposition process, process parameters of the laser pulse deposition process include:
the temperature at the time of forming the antiferromagnetic oxide layer was 550℃and the oxygen gas pressure was 10 -3 And the temperature rising rate of the Torr when the antiferromagnetic oxide functional layer is formed is 20 ℃/min, and the temperature reducing rate after the antiferromagnetic oxide functional layer is formed is 10 ℃/min.
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| JP2005050967A (en) * | 2003-07-31 | 2005-02-24 | Sharp Corp | Magnetic oxide thin film, magnetic memory device, and method for manufacturing the magnetic oxide thin film |
| JP2010212342A (en) * | 2009-03-09 | 2010-09-24 | Osaka Univ | Magnetic memory using voltage induced magnetization reversal, and method of manufacturing the same |
| CN108447982A (en) * | 2018-05-07 | 2018-08-24 | 清华大学 | A kind of information recording device of the non-volatile regulation and control tunnel magneto resistance of electric field |
| CN113488585A (en) * | 2021-07-05 | 2021-10-08 | 中国矿业大学 | Antiferromagnetic/ferroelectric multiferroic heterostructure and preparation method thereof |
| US20220291305A1 (en) * | 2019-08-06 | 2022-09-15 | Hitachi High-Tech Corporation | Magneto-resistance effect element and magneto-resistance effect device |
| CN115715142A (en) * | 2022-11-10 | 2023-02-24 | 清华大学 | Method for generating controllable spin current by utilizing antiferromagnetic material, heterostructure device and spintronics device |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005050967A (en) * | 2003-07-31 | 2005-02-24 | Sharp Corp | Magnetic oxide thin film, magnetic memory device, and method for manufacturing the magnetic oxide thin film |
| JP2010212342A (en) * | 2009-03-09 | 2010-09-24 | Osaka Univ | Magnetic memory using voltage induced magnetization reversal, and method of manufacturing the same |
| CN108447982A (en) * | 2018-05-07 | 2018-08-24 | 清华大学 | A kind of information recording device of the non-volatile regulation and control tunnel magneto resistance of electric field |
| US20220291305A1 (en) * | 2019-08-06 | 2022-09-15 | Hitachi High-Tech Corporation | Magneto-resistance effect element and magneto-resistance effect device |
| CN113488585A (en) * | 2021-07-05 | 2021-10-08 | 中国矿业大学 | Antiferromagnetic/ferroelectric multiferroic heterostructure and preparation method thereof |
| CN115715142A (en) * | 2022-11-10 | 2023-02-24 | 清华大学 | Method for generating controllable spin current by utilizing antiferromagnetic material, heterostructure device and spintronics device |
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