CN115993330A - Line scanning type spectrum imaging system and imaging method thereof - Google Patents
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Abstract
The invention provides a line scanning type spectrum imaging system and an imaging method thereof, wherein the line scanning type spectrum imaging system comprises at least one spectrum imaging chip structure, the spectrum imaging chip structure comprises a pixel photosensitive unit, a first matching layer and a narrow-band filter film, the pixel photosensitive unit is used for realizing image acquisition and data reading, the first matching layer is integrally deposited and grown on the pixel photosensitive unit, the narrow-band filter film is integrally deposited and grown on the first matching layer, the narrow-band filter film is used for realizing the tunability of the central wavelength of a required wave band, and the first matching layer is used for transiting the optical admittance between the narrow-band filter film and the pixel photosensitive unit so as to improve the peak transmittance of the central wavelength. The technical scheme of the invention is applied to solve the technical problems of low central wavelength transmittance and low quantum efficiency of the chip structure in the prior art.
Description
Technical Field
The invention relates to the technical field of spectral imaging, in particular to a line scanning type spectral imaging system and an imaging method thereof.
Background
The hyperspectral imaging system (Hyper Spectral Imaging, HSI for short) can obtain a three-dimensional spectrum image with a characteristic of 'map unification' formed by two-dimensional space image information and one-dimensional spectrum information, and can observe the space information of two-dimensional distribution and the spectrum information on each pixel point.
The image space information reflects external characteristics such as the size, shape, defects and the like of the target object, and the spectrum information can reflect physical and chemical components of the target object. Therefore, physical and chemical information such as material, components and the like can be identified by analyzing and processing the spectrum information, and related positions and ranges can be identified rapidly and intuitively by the space information of the image.
In a classical HSI system, because the system is based on a single discrete device, in order to ensure spatial resolution and spectral resolution, optical devices such as an objective lens, a diaphragm, a collimator, various lenses and the like must be introduced, and focusing and collimation problems among various devices must be considered, so that the complexity, the volume and the cost of the traditional HSI system are high, and the application range is greatly limited.
The line scanning spectrum imaging technology is a means of time exchange for spectrum resolution. Under this mechanism, the two dimensions of the image sensor are usually referred to as spatial and spectral dimensions, and only one specific spectral portion of the content is available at a time in a region of the imaging space. In order to acquire the entire spectral content of the entire space, a relative displacement motion between the spectral imaging system and the target must be performed, with continuous imaging in the displacement motion, to acquire all the information.
In general, a line scanning type spectrum imaging technology adopts a prism/grating as a light splitting mechanism, when imaging, only the content of one line (one line mapped to an image sensor after passing through a lens group) is allowed to enter a light splitting system, after light splitting through the grating/prism, the content of different spectrum sections of images of different lines is received by different lines, imaging is performed, and storage is performed. During imaging, the relative displacement movement is carried out between the target and the imaging system, and the imaging is continuously carried out at the same time, so that all spectral images of the whole space are obtained. Under the mechanism, the light splitting and imaging components are separated, so that the integration level of the system is reduced, and the volume of the system is greatly increased; meanwhile, in order to realize ideal imaging effect, the grating/prism, the front optical system and the subsequent optical system must be strictly processed and adjusted, so that larger pressure is brought to the manufacture and maintenance of the system. Meanwhile, the high-quality grating/prism has high processing difficulty, and pressure is brought to reducing the system cost.
Furthermore, in order to complete the filtering out of the target characteristic spectrum segment, the target distinction is realized, and the narrow-band filter film is integrated on the spectrum imaging chip, so that the tunable filtering at the center of the required wave band can be realized (as shown in fig. 16, the center wavelength of the narrow-band filter film is tunable within a certain range). However, due to the limitation of the refractive index of the existing high-low materials, the spectral bandwidth range cannot cover the full spectrum (as shown in fig. 16, the cut-off bandwidth is less than 200 nm), and the interference of signals with other wave bands exists as shown in fig. 17, and the influence of other wave bands except the required wave bands exists. An external cut-off filter is required (as shown in fig. 18) to cut off the interference band. The existing external cut-off filter film is coated separately and then attached to the image sensor, so that the spectral transmittance is reduced, the quantum efficiency is reduced, and the imaging effect is affected.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art.
According to an aspect of the present invention, there is provided a line-scan spectral imaging system comprising at least one spectral imaging chip structure, the spectral imaging chip structure comprising: the pixel photosensitive unit is used for realizing image acquisition and data reading; the first matching layer is integrally deposited and grown on the pixel photosensitive unit and is used for improving the central wavelength transmittance of the spectrum imaging chip structure; the narrow-band filter film is integrally deposited and grown on the first matching layer and is used for realizing the tunability of the central wavelength of a required wave band; the narrow-band filter film comprises a plurality of FP cavity structures which are distributed in a line scanning manner, the heights of the plurality of FP cavity structures along the direction of the spectrum dimension are different, and the heights of the plurality of FP cavity structures along the direction of the space dimension are the same; at least one spectral imaging chip structure is arranged in a line along the spectral dimension direction.
Further, the spectral imaging chip structure further comprises a second matching layer, the second matching layer is integrally deposited and grown on the narrow-band filter film, and the second matching layer is used for improving the central wavelength transmittance of the spectral imaging chip structure.
Further, the spectral imaging chip structure further includes: the transition layer is integrally deposited and grown on the narrow-band filter film; the first cut-off filter film is integrally deposited and grown on the transition layer and is used for cutting off a first interference wave band; the second cut-off filter film is arranged on the first cut-off filter film and is used for cutting off a second interference wave band, and the second interference wave band is different from the first interference wave band; the third cut-off filter film is arranged on the second cut-off filter film and used for cutting off a third interference wave band, and the third interference wave band is different from the first interference wave band and the second interference wave band.
Further, the second cut-off filter film is adhesively disposed on the first cut-off filter film.
Further, a second cut-off filter film is integrally deposited and grown on the first cut-off filter film.
Further, a third cut-off filter film is adhesively provided on the second cut-off filter film.
Further, a third stop filter film is integrally deposited and grown on the second stop filter film.
Further, the spectrum imaging chip structure further comprises a cut-off filter, the cut-off filter is adhered to the transition layer, and the cut-off filter is used for cutting off interference wavebands.
Further, the spectral imaging chip structure further comprises a plurality of bayer arrays, the bayer arrays are located on the pixel photosensitive units, and the bayer arrays with a plurality of columns periodically arranged are distributed on the pixel photosensitive units along the spectral dimension direction at intervals of the FP cavity structures.
Further, the bayer array is one of an RGGB color filter structure, a RYYB color filter structure, or an RGWB color filter structure.
Further, the line scan spectral imaging system further comprises: the imaging lens group is used for transmitting light in the spectrum range index of the spectrum imaging system; the sensor adapter plate is used for carrying at least one spectrum imaging chip structure, and light transmitted by the imaging lens group is converged on the spectrum imaging chip structure on the sensor adapter plate; the embedded information processing board is connected with the sensor adapter plate and is used for carrying out power supply and signal interaction on the sensor adapter plate and processing and integrating image information of the sensor adapter plate; the push-broom system is used for carrying the sensor adapter plate and the embedded information processing plate and moving the push-broom along the spectral dimension direction; the upper computer is respectively connected with the push-broom system and the embedded information processing board and is used for controlling the mobile push-broom of the push-broom system and acquiring a complete spectrum image according to the image information integrated by the embedded information processing board.
According to another aspect of the present invention, there is provided an imaging method of a line-scan spectral imaging system which performs spectral imaging using the line-scan spectral imaging system as described above, the imaging method of the line-scan spectral imaging system including: the upper computer controls the push-broom system to move along the direction of the spectrum dimension according to the preset push-broom speed; after the moving speed of the push-broom system is stable, the embedded information processing board acquires at least one spectrum imaging chip structure image at a preset frame rate, integrates the images and uploads the images to the upper computer; and the upper computer extracts a specific spectrum part in each frame of image and splices the specific spectrum part to acquire a complete spectrum image of the spectrum part in a scanning range.
Further, the preset push-broom speed satisfies V min ≥L/f frame Wherein V is min The push-broom speed is preset for the minimum push-broom system,l is the length of the FP cavity where the step width maps onto the imaging object plane, L/l=d/f focus =2tan θ, l is the step width, D is the distance from the optical center of the imaging lens set to the object plane, f focus For the focal length of the imaging lens group, θ is the angle of view of the imaging lens group, f frame Is the image frame rate.
By applying the technical scheme of the invention, the line scanning type spectrum imaging system and the imaging method thereof are provided, the line scanning type spectrum imaging system comprises at least one spectrum imaging chip structure, the spectrum imaging chip structure integrally deposits and grows the narrow-band filter film on the first matching layer, the first matching layer is integrally deposited on the pixel photosensitive unit, no gap exists among the narrow-band filter film, the first matching layer and the pixel photosensitive unit, the spectrum transmittance is high, the energy loss is reduced, the one-time preparation process is integrally formed, the environment pollution is avoided, the firmness is better, and the preparation efficiency and the integration level are higher. In the invention, as the narrow-band filter film has larger refractive index difference between the film layer material and the pixel photosensitive unit material of the image sensor in the growth process, the direct growth can lead to unmatched refractive indexes, the central wavelength transmittance is reduced, and the quantum efficiency of the spectrum imaging system is low, thereby influencing the imaging effect.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is evident that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic diagram showing a partial structure of a spectral imaging chip structure (a narrow-band filter film only shows one FP cavity structure) according to a first embodiment of the present invention;
FIG. 2 illustrates a center wavelength peak transmittance schematic with and without matching layers provided in accordance with an embodiment of the invention;
FIG. 3 illustrates a center wavelength peak transmittance schematic of a no-matching layer, a substrate-side matching layer, and an air-side matching layer provided in accordance with a specific embodiment of the present invention;
FIG. 4 shows a schematic diagram of the central wavelength peak transmittance of a no-matching layer, an L-matching layer, and an HL-matching layer provided in accordance with a specific embodiment of the present invention;
fig. 5 shows a schematic partial structure of a spectral imaging chip structure (narrowband filter shows only one FP cavity structure) provided in accordance with an eleventh embodiment of the invention;
FIG. 6 shows a schematic tuning filter diagram of a matching layer plus narrow-band filter film plus integrally grown first, second and third stop filter films of a line sweep chip in the 400 nm-510 nm range provided in accordance with a specific embodiment of the present invention;
FIG. 7a shows a schematic tuning filter diagram of a narrow band filter film and integrally grown first, second and third stop filter films of a line sweep chip in the 400 nm-510 nm range provided in accordance with a specific embodiment of the present invention;
FIG. 7b shows a schematic filtering diagram of a narrow band filter film plus integral growth of first and second cut-off filter films for a line sweep chip in the 400 nm-510 nm range provided in accordance with a specific embodiment of the present invention;
FIG. 7c shows a schematic diagram of a second cut-off filter of a line sweep chip in the 400nm to 510nm range provided in accordance with a specific embodiment of the present invention;
FIG. 8 shows a schematic tuning filter of a matching layer plus narrow-band filter film plus integrally grown first, second and third stop filter films of a line sweep chip in the range of 510nm to 630nm provided in accordance with a specific embodiment of the present invention;
FIG. 9a shows a schematic tuning filter of a narrow band filter film plus integrally grown first, second and third stop filter films of a line sweep chip in the range of 510nm to 630nm provided in accordance with a specific embodiment of the present invention;
FIG. 9b shows a schematic filtering diagram of a narrow band filter film plus integrally grown first cut-off filter film for a line sweep chip in the range of 510nm to 630nm provided in accordance with a specific embodiment of the present invention;
FIG. 9c shows a schematic diagram of a second cut-off filter of a line sweep chip in the range of 510nm to 630nm provided in accordance with a specific embodiment of the present invention;
FIG. 9d shows a schematic filtering diagram of a third stop filter film of a line sweep chip in the range of 510nm to 630nm provided in accordance with a specific embodiment of the present invention;
fig. 10 shows a diagram of the filtering effect of the spectral imaging chip structure without the cut-off filter in the twenty-seventh embodiment according to the present invention;
FIG. 11 is a diagram showing the effect of the addition of a cut-off filter film determined by the film thickness adjustment coefficient determination method according to the present invention to a second comparative example provided twenty-seventh according to a specific embodiment of the present invention;
FIG. 12 is a graph showing the filtering effect of a spectral imaging chip structure incorporating a cut-off filter film with randomly determined film thickness adjustment coefficients in a twenty-seventh third comparative example provided in accordance with an embodiment of the present invention;
fig. 13 is a diagram showing a filtering effect of a spectral imaging chip structure without a cut-off filter in a twenty-eighth embodiment according to the present invention;
FIG. 14 is a diagram showing the effect of the addition of a cut-off filter film determined by the film thickness adjustment coefficient determination method according to the present invention to a second comparative example provided in twenty-eighth embodiment of the present invention;
FIG. 15 is a diagram showing the filtering effect of a spectral imaging chip structure of a cut-off filter film randomly determined by adding a film thickness adjustment coefficient to a third comparative example according to a twenty-eighth embodiment of the present invention;
FIG. 16 shows a schematic filtering diagram of a prior art narrow band filter;
FIG. 17 is a schematic diagram showing the filtering of a prior art narrow band filter in the presence of other band signal interference;
fig. 18 shows a schematic diagram of a prior art cut-off filter;
FIG. 19 is a schematic diagram of a classical Bayer array arrangement;
FIG. 20 is a schematic diagram of a spectral imaging chip including a Bayer array according to an embodiment of the present invention;
FIG. 21 is a schematic diagram of a four-spectral imaging chip including a Bayer array according to an embodiment of the present invention;
fig. 22 is a schematic diagram of a line scan spectral imaging system according to an embodiment of the present invention.
Wherein the above figures include the following reference numerals:
10. A pixel light sensing unit; 20. a narrow band filter film; 30. a first cut-off filter film; 60. a second cut-off filter film; 70. and a third stop filter film.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
As a first embodiment of the present invention, as shown in fig. 1, there is provided a line-scan type spectral imaging system, characterized in that the line-scan type spectral imaging system includes at least one spectral imaging chip structure including: the pixel photosensitive unit 10, the first matching layer 50 and the narrow-band filter film 20, wherein the pixel photosensitive unit 10 is used for realizing image acquisition and data readout; the first matching layer 50 is integrally deposited and grown on the pixel photosensitive unit 10, and the first matching layer 50 is used for improving the central wavelength transmittance of the spectral imaging chip structure; the narrow-band filter film 20 is integrally deposited and grown on the first matching layer 50, and the narrow-band filter film 20 is used for realizing tunability of the center wavelength of a required wave band; the narrow-band filter 20 includes a plurality of FP cavity structures distributed in a line scan, and the FP cavity structures along the spectral dimension have different heights, and the FP cavity structures along the spatial dimension have the same height; at least one spectral imaging chip structure is arranged in a line along the spectral dimension direction.
In the first embodiment of the invention, the line scanning type spectrum imaging system comprises at least one spectrum imaging chip structure, the spectrum imaging chip structure is formed by integrally depositing and growing the narrow-band filter film on the first matching layer, the first matching layer is integrally deposited on the pixel photosensitive unit, no gap exists among the narrow-band filter film, the first matching layer and the pixel photosensitive unit, the spectrum transmittance is high, the energy loss is reduced, the one-time preparation process is integrally formed, the environment pollution is avoided, the firmness is better, and the preparation efficiency and the integration level are higher. In the invention, as the narrow-band filter film has larger refractive index difference between the film layer material and the pixel photosensitive unit material of the image sensor in the growth process, the direct growth can lead to unmatched refractive indexes, the central wavelength transmittance is reduced, and the quantum efficiency of the spectral imaging system is low, thereby influencing the imaging effect. The spectral resolution capability is improved, on one hand, the application scene of the system is expanded, so that the detection of the spectral imaging substances is gradually changed from a technical scheme which is more dependent on a classification recognition algorithm to the accurate measurement of the absorption rate and the reflection rate of the substances under specific wavelengths, and the confidence of the system is greatly improved; on the other hand, the resolving power of the spectroscopic imaging system is improved, and the pressure of subsequent data processing is relieved. The conventional classification recognition algorithm requiring more operation resources may become unnecessary, and the system does not need to select a processor with high computation power, so that the cost, the power consumption, the research and development difficulty and the reliability of the system are reduced.
As a second embodiment of the present invention, there is provided a line-scan spectral imaging system further defined as a film system structure of a spectral imaging chip structure based on the first embodiment, in which the film system structure of the spectral imaging chip structure is configured as sub|q1 (HL) ≡s 1 H 2nL H(LH)^S 2 I Air, wherein Q1 is the film structure of the first matching layer 50, (HL) ≡S 1 H 2nL H(LH)^S 2 Is the film system structure of the narrow band filter film 20, n is the film thickness adjustment coefficient of the narrow band filter film 20, H is the high refractive index material, L is the low refractive index material, S 1 And S is 2 The overlapping times are all. In the second embodiment of the present invention, by configuring a specific model structure of the optical imaging chip structure, tunability of center filtering in a desired band and improvement of the transmittance of the center wavelength can be achieved.
As a third embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined in terms of a film system structure of the first matching layer on the basis of the first embodiment. In this embodiment, the film structure Q1 of the first matching layer 50 includes L or HL, H represents a high refractive index material, and L represents a low refractive index material.
Specifically, in this third embodiment, any one of the spectral imaging chip structures can be represented by an equivalent interface, and its reflection, transmission, and phase characteristics are determined by the admittance of the incident medium and the combined admittance of the equivalent interface. Essentially any one film can be considered to change the admittance of the equivalent interface, thereby changing the optical properties of the film system. The optical admittance is the ratio of the electric field strength to the magnetic field strength, and is numerically equal to the refractive index in the optical band.
On a substrate (refractive index n s ) When there is only one film (i.e., either H or L, a single film), when the beam is directed from air (n 0 When vertical incidence is included in=1), the feature matrix is:
the above formula contains all useful parameters of the film, wherein,
b is electric field strength, C is magnetic field strength, delta 1 For the phase thickness of the first film, n 1 Is the refractive index of the first layer film, d 1 The thickness of the first film layer is lambda is the central wavelength theta 1 For the incident angle of the first film, eta 1 Is the oblique optical admittance, eta of the first film s I is a plurality of inclined optical admittances of the substrate.
From the following components
The expression of the matrix shows that when the effective optical thickness of the film is an integer multiple of 1/4 wavelength, that is
Wherein n is refractive index, d is film thickness, and θ is incident angle.
Or a phase thickness of
Integer multiples of (i.e.)
Wherein delta is the phase thickness of the film;
the characteristic matrix of the film is
R＝[(η 0 -η S )/(η 0 +η S )] 2
Wherein Y represents optical admittance, R is reflectivity, eta 0 For optical admittance at the center wavelength λ, the characteristic matrix of the film is an identity matrix that has no effect on the reflective or transmissive properties of the film system at the reference wavelength λ, and this film is referred to as a dummy layer.
Taking the structure of the spectrum imaging chip designed at present as an example, the narrow-band filter film is equivalent to a dummy layer, and the dummy layer does not influence the spectrum transmittance. The film system structure is
Sub|(HL)^3H 2nL H(LH)^3|Air
At the center wavelength λ, the intermediate cavity layer is an even multiple of λ/4, and has no effect on the transmittance of the center wavelength, and can be removed, and in the rest of the structure, two adjacent high refractive index film layers form one λ/2 layer, or can be removed, so that all the film layers are removed, and finally the structure of sub|air is formed.
There must be a residual reflectivity at the center wavelength due to the difference in the refractive index of the substrate and the refractive index of air. The transmittance at the center wavelength can be improved by adding a matching layer. As shown in fig. 2, the center wavelength peak transmittance with the matching layer is significantly higher than the center wavelength peak transmittance without the matching layer. The concept of dummy layers is introduced and the design problem of matching layers translates into an antireflection film design that is primarily related to the substrate. For sub|air, a thick low refractive index layer may be added to act as a matching layer on the side near the substrate or Air side.
For the case of a low refractive index spacer layer (i.e., 2L), the half-wave width is expressed by the following equation,
wherein x represents the total number of high refractive index layers of the multilayer reflective film, and when no matching layer exists, the multilayer reflective film refers to an upper Bragg mirror; with matching layersWhat is meant is a 2L pre-spacer multilayer film that includes a high refractive index layer in the spacer layer. X=4 when the film structure is sub| (HL)/(3H 2LH (LH)/(3|air), X=5 when the film structure is sub|HL (HL)/(3H 2L H (LH)/(3 LH L|air), m represents the interference order, n H Refractive index n of high refractive index material L Is the refractive index of the low refractive index material.
According to formula (1), the half-wave width of the film system before adding the matching layer is
The half-wave width after adding a low-refractive index matching layer on the substrate side is
According to the half-wave width after the matching layer is added on the substrate side, the addition of the matching layer improves the transmittance of the filter, and meanwhile, the half-wave width is changed, and the resolution is influenced by the variation of the half-wave width. The matching layer is added to one side close to the substrate, so that the half-wave width can be reduced while the transmittance of the filter is improved. The half-wave width is reduced, so that more spectral bands can be prepared in a limited cut-off range, the overlapping range of adjacent spectral bands is reduced, different spectral band characteristics are better identified, but the half-wave width is too narrow to be beneficial to signal identification, and therefore the half-wave width can be adjusted according to the actual spectral band number and the signal identification rate requirement.
As a fourth embodiment of the present invention, a line-scan type spectral imaging system is provided, which introduces a second matching layer on the basis of the spectral imaging chip structure provided in the first embodiment. A second matching layer is integrally deposited and grown on the narrow band filter film 20, the second matching layer being used to increase the central wavelength peak transmittance of the spectral imaging chip structure. In this fourth embodiment, a first matching layer is provided on the substrate side and a second matching layer is provided on the air side, respectively, and the addition of the first matching layer and the second matching layer changes the half-wave width while improving the filter transmittance. As shown in fig. 3, the matching layer is added on the substrate side to reduce the half-wave width, and is added on the air side to increase the half-wave width. In order to make the bandwidth of adding the matching layer close to that of not adding the matching layer, the matching layer can be added at the same time on the substrate side and the air side, so that the half-wave width can be ensured to be unchanged.
As a fifth embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined by a film system structure of a spectral imaging chip structure based on the fourth embodiment, wherein the film system structure is sub|q1 (HL) ≡s 1 H 2nL H(LH)^S 2 Q2|air, wherein Q1 is the film structure of the first matching layer 50, (HL) ≡S 1 H 2nL H(LH)^S 2 Is a film system structure of the narrow band filter film 20, n is a film thickness adjustment coefficient of the narrow band filter film 20, Q2 is a film system structure of the second matching layer, H is a high refractive index material, L is a low refractive index material, S 1 And S is 2 The overlapping times are all.
As a sixth embodiment of the present invention, there is provided a line-scan spectral imaging system in which the first matching layer and the second matching layer are specifically defined on the basis of the fifth embodiment. In this embodiment, the film structure is sub|HL (HL) ≡3H2nL H (LH) ≡3LHL|air, and the half-wave width is
Is obtained, wherein lambda is the central wavelength, m represents the interference order, n H Refractive index n of high refractive index material L Refractive index, η, of low refractive index material s Is the tilt optical admittance of the substrate. As a specific embodiment of the present invention, the half-wave width of the spectral imaging chip structure is +.>
As a seventh embodiment of the present invention, there is provided a line-scan type spectral imaging system, which is further defined as a film system structure of a spectral imaging chip structure on the basis of the first embodiment. In this embodiment, the film structure of the substrate side with a low refractive index layer is sub|L (HL) ≡3H2nL H (LH) ≡3|air. The film system structure of adding a high refractive index layer and a low refractive index layer on the substrate side is sub|HL (HL) ≡3H2nL H (LH) ≡3|air. As shown in fig. 4, the transmittance curve shows that the transmittance at the center wavelength is 92.78% after the matching layer L is added; after the matching layer HL is added, the transmittance of the center wavelength is 94.68%, and the transmittance is higher.
As an eighth embodiment of the present invention, there is provided a line-scan type spectral imaging system, which includes a pixel photosensitive unit 10, a narrowband filter film 20, and a third matching layer, the pixel photosensitive unit 10 is used for implementing image acquisition and data readout, the narrowband filter film 20 is integrally deposited and grown on the pixel photosensitive unit 10, the narrowband filter film 20 is used for implementing tunability at a center wavelength of a desired band, the third matching layer is integrally deposited and grown on the narrowband filter film 20, and the third matching layer is used for improving a center wavelength peak transmittance of the spectral imaging chip structure.
In the eighth embodiment of the invention, in the growing process of the narrow-band filter film, the problem that the refractive index is not matched and the central wavelength peak transmittance is reduced due to the fact that the refractive index is not matched and the central wavelength peak transmittance is reduced due to direct growth is considered, and the imaging effect is affected due to the fact that the quantum efficiency of the spectrum imaging system is low, so that the problems of the mismatching of the refractive index and the reduction of the central wavelength peak transmittance can be effectively solved and the central wavelength peak transmittance of the spectrum imaging chip structure is effectively improved due to the fact that the third matching layer is integrally grown on the upper layer of the narrow-band filter film.
As a ninth embodiment of the present invention, there is provided a line-scan type spectral imaging system, which is further defined as a film system structure of a spectral imaging chip structure on the basis of the eighth embodiment. In this embodiment, the film system structure of the spectral imaging chip structure is Sub (HL) ≡S 1 H2nL H(LH)^S 2 Q3|air, wherein, (HL) ≡S 1 H 2nL H(LH)^S 2 Is a film system structure of a narrow-band filter film 20, n is a narrow-band filter film20, Q3 is the film structure of the third matching layer, H is the high refractive index material, L is the low refractive index material, S 1 And S is 2 The overlapping times are all.
Specifically, in the present invention, the film system structure selection of the matching layer of the spectral imaging chip structure is shown in table 1. Q1 and Q2 have a corresponding relationship, and Q2 is not present when Q1 is L; q2 is L without Q1; when Q1 is HL, no Q2 or Q2 is LHL; when Q1 is LHL, Q2 is LH.
Table 1 matching layer film system structure selection
| Q1 | Q2 | Equivalent to |
| L | Sub|L|Air(substrate side) | |
| L | Sub|L|Air (air side) | |
| HL | Sub|HL|Air(substrate side) | |
| HL | LHL | Sub|L|Air(air side) |
| LHL | LH | Sub|L|Air(substrate side) |
As a tenth embodiment of the present invention, there is provided a line-scan type spectral imaging system which defines how the half-wave width of the spectral imaging chip structure is determined on the basis of the eighth embodiment. In this embodiment, the half-wave width of the spectral imaging chip structure may be based on 
Wherein λ is the central wavelength, x is the total number of high refractive index layers of the multilayer reflective film, m is the interference order, n H Is the refractive index of the high refractive index material, n l is the refractive index of the low refractive index material.
As an eleventh embodiment of the present invention, as shown in fig. 5, there is provided a line-scan type spectral imaging system, which is further defined in terms of a spectral imaging chip structure on the basis of the first embodiment. In this embodiment, the spectral imaging chip structure further includes a transition layer 40, the transition layer 40 being integrally deposited and grown on the narrow band filter film 20; the first cut-off filter film 30, the first cut-off filter film 30 is integrally deposited and grown on the transition layer 40, the first cut-off filter film 30 is used for cutting off the first interference wave band; a second cut-off filter film 60, the second cut-off filter film 60 being disposed on the first cut-off filter film 30, the second cut-off filter film 60 being configured to cut off a second interference band, the second interference band being different from the first interference band; the third cut-off filter film 70, the third cut-off filter film 70 is disposed on the second cut-off filter film 60, the third cut-off filter film 70 is used for cutting off a third interference wave band, and the third interference wave band is different from the first interference wave band and the second interference wave band.
In the eleventh embodiment of the invention, the transition layer is integrally deposited and grown on the narrow-band filter film, the first cut-off filter film is integrally deposited and grown on the transition layer, no gap exists among the first cut-off filter film, the transition layer, the narrow-band filter film and the pixel photosensitive unit, the spectral transmittance is high, the energy loss is reduced, the spectral imaging chip structure is integrally formed by a one-step preparation process, is not polluted by external environment, has better firmness, and has higher preparation efficiency and integration level; by disposing the second cut-off filter film on the first cut-off filter film and disposing the third cut-off filter film on the second cut-off filter film, the cut-off range of the interference band can be effectively widened. In addition, as the equivalent refractive indexes of the narrow-band filter film and the first cut-off filter film are different, the peak transmittance can be influenced by direct superposition, and the peak transmittance of the spectrum imaging chip structure can be effectively improved by arranging the transition layer between the narrow-band filter film and the first cut-off filter film. Compared with the external attaching cut-off filter film in the prior art, the spectrum imaging chip structure provided by the invention integrates the first cut-off filter film and the narrow-band filter film in the spectrum imaging chip structure, so that the quantum efficiency and the spectrum transmittance are greatly improved; the second cut-off filter film is arranged on the first cut-off filter film, and the third cut-off filter film is arranged on the second cut-off filter film, so that the cut-off range of an interference wave band can be widened; and a transition layer is arranged between the narrow-band filter film and the first cut-off filter film, so that the peak transmittance of the spectrum imaging chip structure is effectively improved, and the spectrum resolution capability of the line-scan spectrum imaging system can be effectively improved.
As a twelfth embodiment of the present invention, there is provided a line-scan spectral imaging system further defined by a film system structure of a spectral imaging chip structure, which is configured as sub|hl H (LH) ≡s, on the basis of the tenth embodiment 1 2nL(HL)^S 1 H Ln 1 (W1)^S 2 n 2 (W2)^S 3 n 3 (W3)^S 4 I Air, HL is the film structure of the matching layer 50, H (LH) ≡S 1 2nL(HL)^S 1 H is narrowFilm structure with filter film 20, L is film structure of transition layer 40, n 1 (W1)^S 2 Is a film system structure of the first cut-off filter film 30, n 2 (W2)^S 3 Is the film structure of the second cut-off filter film 60, n 3 (W3)^S 4 The third stop filter film 70 has a film structure in which W1, W2 and W3 each include a high refractive index material and a low refractive index material, H is a high refractive index material, L is a low refractive index material, S 1 、S 2 、S 3 And S is 4 For the number of times of lamination, n is the film thickness adjustment coefficient of the narrow band filter film 20, n 1 For the film thickness adjustment coefficient, n, of the first cut-off filter film 30 2 For the second cut-off filter 60 film thickness adjustment factor, n 3 The film thickness adjustment coefficient for the third stop filter film 70. In this embodiment, by configuring a specific model structure of the optical imaging chip structure, tunability of filtering at the center of a desired band and prevention of stray light interference can be achieved. In the present invention, the film thickness adjustment coefficient n of the cut-off filter film 1 、n 2 And n 3 There are two determination methods, the first is obtained by software simulation, in which various filter curves can be simulated by software, and the most preferred film thickness adjustment coefficients are determined by the performance differences of tuned filter curves obtained by different parameters. The second way is by determining the band to be cut off of the cut-off filter; calculating and obtaining the central wavelength of the spectrum segment to be cut according to the first boundary threshold value and the second boundary threshold value of the spectrum segment to be cut; the film thickness adjusting coefficient of the cut-off filter film is determined according to the center wavelength of the spectrum to be cut-off and the center wavelength of the narrow-band filter film, and the film thickness adjusting coefficient is obtained in a numerical calculation mode, so that the calculation mode is simple, and the effective cut-off of a specific wave band can be realized. In the actual application process, the selection can be performed according to actual needs.
As a thirteenth embodiment of the present invention, there is provided a line-scan type spectral imaging system, which is based on the above-described embodiment, further defined with respect to parameters of a film system structure of a spectral imaging chip structure. In this embodiment, S 1 ＝5-7，S 2 ,S 3 ,S 4 ＝8-13，n 1 ,n 2 ,n 3 =0.5-2.5. Wherein Sub is a substrate Si, air is Air, H represents a high refractive index material Ta 2 O 5 、Ti 3 O 5 、TiO 2 、Si 3 N 4 、Nb 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the L represents a low refractive index material SiO 2 、MgF 2 Al and 2 O 3 one or a mixture thereof.
As a fourteenth embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined by the cutoff filter film on the basis of the above-described embodiments. In the embodiment, the first cut-off filter film is integrally deposited and grown on the narrow-band filter film by adopting a semiconductor process, and the first cut-off filter film is made of a material compatible with the semiconductor process, so that the spectral transmittance is further improved, and the energy loss is reduced. W1, W2 and W3 each comprise (0.5LH0.5L) or (0.5HL0.5H). The first, second and third cut- off filter films 30, 60 and 70 are each prepared by alternately depositing a high refractive index material and a low refractive index material. The high refractive index materials of the first, second and third cutoff filter films 30, 60 and 70 each include Ta 2 O 5 、Ti 3 O 5 、TiO 2 、Si 3 N 4 Or Nb (Nb) 2 O 5 The low refractive index materials of the first, second and third cutoff filter films 30, 60 and 70 each include SiO 2 、MgF 2 And Al 2 O 3 At least one of them. By limiting the cut-off filter film, the quantum efficiency and spectral transmittance can be greatly improved.
As a fifteenth embodiment of the present invention, there is provided a line-scan spectral imaging system in which the manner of disposing the second cut-off filter film 60 is further defined on the basis of the above-described embodiments. In this embodiment, the second cut filter film 60 is adhesively disposed on the first cut filter film 30. In the fifteenth embodiment of the present invention, the spectral imaging chip structure can effectively cut off the interference band while simplifying the process by attaching the second cut-off filter film to the first cut-off filter film. Compared with the external attaching cut-off filter film in the prior art, the spectrum imaging chip structure provided by the invention integrates the first cut-off filter film and the narrow-band filter film in the spectrum imaging chip structure, so that the quantum efficiency and the spectrum transmittance are greatly improved; the second cut-off filter film is attached to the first cut-off filter film, so that the processing technology can be effectively simplified, the cut-off range of an interference wave band is widened, and the spectrum resolution capability of the line scanning type spectrum imaging system can be effectively improved.
As a sixteenth embodiment of the present invention, there is provided a line scanning type spectral imaging system in which the manner of disposing the second cut-off filter film 60 is further defined on the basis of the above-described embodiment. In this embodiment, the second cut filter film 60 is integrally deposited and grown on the first cut filter film 30. The second cut-off filter film 60 is arranged on the first cut-off filter film 30 through integral deposition growth, so that the second cut-off filter film can be integrated in a spectrum imaging chip structure, the spectrum transmittance is high, and the quantum efficiency and the spectrum transmittance are greatly improved.
As a seventeenth embodiment of the present invention, there is provided a line scanning type spectral imaging system in which the manner of disposing the third stop filter film 70 is further defined on the basis of the above-described embodiment. In this embodiment, the third cut filter film 70 is adhesively provided on the second cut filter film 60. In the seventeenth embodiment of the present invention, the spectral imaging chip structure can effectively widen the cut-off range of the interference band while simplifying the processing process by attaching the third cut-off filter film to the second cut-off filter film. Compared with the external attaching cut-off filter film in the prior art, the spectrum imaging chip structure provided by the invention has the advantages that the third cut-off filter film is attached to the second cut-off filter film, so that the processing technology can be effectively simplified, the cut-off range of an interference wave band is widened, and the spectrum resolution capability of the line scanning spectrum imaging system can be effectively improved.
As an eighteenth embodiment of the present invention, there is provided a line-scan spectral imaging system in which the arrangement of the third stop filter film 70 is further defined on the basis of the sixteenth embodiment. In this embodiment, the third cut filter film 70 is integrally deposited and grown on the second cut filter film 60. The third stop filter film 70 is disposed on the second stop filter film 60 by integral deposition growth, so that the third stop filter film can be integrated in a spectral imaging chip structure, and the spectral transmittance is high, so that the quantum efficiency and the spectral transmittance are greatly improved.
As a nineteenth embodiment of the present invention, there is provided a line-scan spectral imaging system in which the structure of the narrow-band filter film is further defined on the basis of the above-described embodiments. Through setting up the structure of narrow band filter film, can effectively reduce the structural complexity of chip structure, reduce structure volume and reduce cost. In this embodiment, the pixel light sensing unit includes a plurality of pixel light sensing portions, a plurality of FP cavity structures are disposed in one-to-one correspondence with the plurality of pixel light sensing portions, the plurality of FP cavity structures are all formed in one step by using a semiconductor process, and any FP cavity structure includes a first mirror, a light-transmitting layer, and a second mirror that are sequentially stacked from bottom to top. The first reflecting mirror, the light passing layer, the second reflecting mirror and the pixel photosensitive part are made of materials compatible with semiconductor technology, and are strictly aligned in the longitudinal direction, and no later-attached part exists. In the mode, the traditional light splitting system is directly processed on the pixel photosensitive unit of the photoelectric sensor by means of advanced semiconductor (CMOS) process technology, stray light is reduced due to tight connection, photon utilization rate is improved, and therefore speed can reach hundred frames per second, and a spectrum video function is realized; the volume and the weight are not different from those of a common RGB chip, and an imaging system with the size of a finger is realized; CMOS technology provides an unparalleled level of integration for the spectral imaging chip structure, and can be connected with any circuit with high integration, such as embedded in a mobile phone.
As a twentieth embodiment of the present invention, there is provided a line-scan spectral imaging system, further defined by the first mirror and the second mirror on the basis of the nineteenth embodiment. In this embodiment, the first mirror is a lower mirror, the second mirror is an upper mirror, and the upper mirror is made of multiple layers of high-reflectivity materials and multiple layers of low-reflectivity materials alternately to form a bragg mirror, which are overlapped with each other for multiple times, and the reflectivity reaches over 99% as a cavity mirror of an FP cavity structure. The lower reflector has the same structure and material as the upper reflector, and is positioned between the light transmitting layer and the pixel photosensitive part, and has high reflection effect.
As a twenty-first embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined in terms of the number and spectral range of the spectral imaging chip structures on the basis of the first embodiment. In the invention, the number of the spectrum imaging chip structures and the spectrum ranges corresponding to the chips can be set according to the actual demands of users. The multiple spectrum imaging chips can be flexibly combined, increased or decreased, and the imaging spectrum can be changed and customized with minimum cost. The design mode of the 'building blocks' greatly expands the expandability and the customizability of the system, and aiming at different application scenes, a special product can be quickly formed by changing the mode of an image sensor, and a spectrum imaging chip with a specific spectrum is not required to be independently researched and developed for a certain application scene, so that the research and development time period and cost are reduced, and the universal and serial design of the product is facilitated.
In this embodiment, the line scan spectral imaging system includes four spectral imaging chip structures that cover in sequence spectral ranges of 400-510 nm, 510-630 nm, 640-810 nm, and 800-1000 nm.
As a twenty-second embodiment of the present invention, there is provided a spectral imaging chip structure in which a chip structure in a specific wavelength band 400 to 510nm range is defined on the basis of the above-described embodiment. The spectral imaging chip structure is a line scanning chip in the range of 400-510 nm, fig. 6 shows a tuning filter schematic diagram of a matching layer of the line scanning chip, a narrow-band filter film and a first, a second and a third stop filter film which are integrally grown, fig. 7a shows a tuning filter schematic diagram of a narrow-band filter film of the line scanning chip, a first, a second and a third stop filter film which are integrally grown, fig. 7b shows a tuning filter schematic diagram of a narrow-band filter film of the line scanning chip, a first and a second stop filter film which are integrally grown, and fig. 7c shows a tuning filter schematic diagram of a third stop filter film of the line scanning chip. In this embodiment, the spectral imaging chip structure is a line scan chip in the range of 400nm to 510nm, the film structure of the spectral imaging chip structure is sub|HL H (LH)/(52 nL (HL)/(5H) L1.28 (0.5LH0.5L)/(101.6 (0.5LH0.5L)/(101.99 (0.5LH0.5L)/(10|air), wherein HL is the film structure of the matching layer, H (LH)/(52 nL (HL)/(5H) is the film structure of the narrow band filter film 20, L is the film structure of the transition layer 40, 1.28 (0.5 LH 0.5L)/(10) is the film structure of the first cut-off filter film 30, 1.6 (0.5 LH 0.5L)/(10) is the film structure of the second cut-off filter film 60, and 1.99 (0.5 LH 0.5L)/(10) is the film structure of the third cut-off filter film 70. The central wavelength of the spectrum imaging chip structure is 460nm, n=0.573-1.344, the thickness of the narrow-band spacer layer is 90nm-211nm, and the narrow-band peak value is tunable in 407nm-507 nm. In this embodiment, the film thickness adjustment coefficient of the cut-off filter film is obtained by means of software simulation. Alternatively, as other embodiments of the present invention, the film thickness adjustment coefficient of the cut-off filter film may be determined according to the center wavelength of the to-be-cut-off spectrum and the center wavelength of the narrow-band filter film, which is not limited herein, and may be determined in other manners.
As a twenty-third embodiment of the present invention, there is provided a spectral imaging chip structure in which a chip structure in a range of 510nm to 630nm of a specific wavelength band is defined on the basis of the above-described embodiment. The spectral imaging chip structure is a line sweep chip in the range of 510nm to 630nm, fig. 8 shows a tuning filter schematic diagram of a matching layer plus a narrowband filter film plus an integrally grown first, second and third cut-off filter film of the line sweep chip, fig. 9a shows a tuning filter schematic diagram of a narrowband filter film plus an integrally grown first, second and third cut-off filter film of the line sweep chip, fig. 9b shows a tuning filter schematic diagram of a narrowband filter film plus an integrally grown first cut-off filter film of the line sweep chip, fig. 9c shows a tuning filter schematic diagram of a second cut-off filter film of the line sweep chip, and fig. 9d shows a tuning filter schematic diagram of a third cut-off filter film of the line sweep chip. In this embodiment, the spectral imaging chip structure is a line scan chip in the range of 510nm to 630nm, the film structure of the spectral imaging chip structure is sub|HL H (LH)/(52 nL (HL)/(5 HL 0.79 (0.5HL0.5H)/(101.3 (0.5LH0.5L)/(101.6 (0.5LH0.5L)/(10|air), wherein HL is the film structure of the matching layer, H (LH)/(52 nL (HL)/(5H) is the film structure of the narrow band filter film 20, L is the film structure of the transition layer 40, 0.79 (0.5HL0.5H)/(10) is the film structure of the first cut-off filter film 30, 1.3 (0.5LH0.5L)/(10) is the film structure of the second cut-off filter film 60, and 1.6 (0.5LH0.5L)/(10) is the film structure of the third cut-off filter film 70. The central wavelength of the spectrum imaging chip structure is 570nm, n=0.64-1.336, the thickness of the narrow-band spacing layer is 125nm-261nm, and the narrow-band peak value is tunable within 513nm-622 nm. In this embodiment, the film thickness adjustment coefficient of the cut-off filter film is obtained by means of software simulation. Alternatively, as other embodiments of the present invention, the film thickness adjustment coefficient of the cut-off filter film may be determined according to the center wavelength of the to-be-cut-off spectrum and the center wavelength of the narrow-band filter film, which is not limited herein, and may be determined in other manners.
As a twenty-fourth embodiment of the present invention, there is provided a spectral imaging chip structure in which the film thickness adjustment coefficient of the cut-off filter film is further defined on the basis of the above-described embodiment. This embodiment describes in detail a second acquisition method of the film thickness adjustment coefficient of the cut-off filter film. In this embodiment, the film thickness adjustment coefficient may be obtained according to the following steps: determining a to-be-cut-off spectrum section of a cut-off filter film; calculating and obtaining the central wavelength of the spectrum segment to be cut according to the first boundary threshold value and the second boundary threshold value of the spectrum segment to be cut; and determining a film thickness adjustment coefficient of the cut-off filter film according to the center wavelength of the to-be-cut-off spectrum and the center wavelength of the narrow-band filter film.
In the twenty-fourth embodiment of the invention, the filter film is optimally designed, namely, the film thickness adjustment coefficient of the filter film is designed, specifically, the center wavelength of the to-be-cut-off spectrum is obtained through calculation according to the first boundary threshold value and the second boundary threshold value of the to-be-cut-off spectrum, and the film thickness adjustment coefficient of the filter film is determined through the center wavelength of the to-be-cut-off spectrum and the center wavelength of the narrow-band filter film, so that when the filter film with the film thickness adjustment coefficient is integrally deposited on the narrow-band filter film, light leakage outside the free spectrum range can be greatly inhibited, cut-off of an interference band is completed, the side mode inhibition ratio of spectrum filtering is greatly improved, and the spectrum imaging performance of the spectrum imaging chip structure is improved.
As a twenty-fifth embodiment of the present invention, there is provided a spectral imaging chip structure that defines a center wavelength of a band to be cut off on the basis of the above-described embodiments. In this embodiment, the center wavelength of the spectral band to be cut-off may be based on
To obtain; alternatively, the center wavelength of the spectral band to be cut-off may be based on
Is obtained by, wherein lambda 0 Lambda is the center wavelength of the spectrum to be cut off 1 For a first boundary threshold, lambda, of the spectral band to be cut-off 2 Is a second boundary threshold for the portion of spectrum to be cut off. The above two methods for obtaining the center wavelength of the spectrum to be cut off are adopted
The center wavelength of the spectrum to be cut off is obtained, the calculation accuracy is higher, and the suppression of light leakage outside the free spectrum range (compared with the formula +.>
The center wavelength of the band to be cut off is obtained).
Twenty-sixth aspect of the present inventionIn an embodiment, a spectral imaging chip structure is provided, and the spectral imaging chip structure is based on the above embodiment, and defines a film thickness adjustment coefficient of a cut-off filter film. In this embodiment, the film thickness adjustment coefficient n of the cut-off filter film can be determined according to
Is obtained, wherein lambda is the center wavelength of the narrow-band filter film, n=n 1 、n 2 Or n 3 . By adopting the method to determine the film thickness adjustment coefficient of the cut-off filter film, light leakage outside the free spectrum range can be greatly inhibited, cut-off of interference wave bands is completed, the side mode inhibition ratio of spectrum filtering is greatly improved, and the spectrum imaging performance of the spectrum imaging chip structure is improved.
As a twenty-seventh embodiment of the present invention, there is provided a spectral imaging chip structure that exemplifies the effect of the film thickness adjustment coefficient determination method on suppressing light leakage on the basis of the foregoing embodiments. Taking the λ of 600nm center wavelength as an example, the first comparative example is to obtain a filtering effect as shown in fig. 10 without adding a cut-off filter film, it can be seen that narrow-band filtering is only realized in the range of 530nm to 696nm, and very serious light leakage phenomena occur in the spectral ranges of 400nm to 520nm and 700nm to 1000nm, which is very serious light leakage for the SI-based detector responding to the spectral range of 400nm to 1000nm, and the two spectral ranges need to be suppressed.
In the second comparative example of the twenty-seventh embodiment, it is designed that a first cut-off filter film is integrally deposited on the narrow-band filter film according to the light leakage spectrum of 400nm to 520nm, 700nm to 1000nm, a second cut-off filter film is attached to the first cut-off filter film, and a third cut-off filter film is attached to the second cut-off filter film, wherein the first cut-off filter film is used for suppressing light leakage in the range of 400nm to 520nm, and the center wavelength is 
Determining the center wavelength to be 452nm; corresponding film thickness adjustment coefficient alpha 1 452nm/600nm = 0.75; same reasonThe second cut-off filter film suppresses light leakage in the range of 700nm to 780nm with a center wavelength of +.>
Determining that the center wavelength is 738nm; corresponding film thickness adjustment coefficient alpha 2 738nm/600 nm=1.23; the third cut-off filter film suppresses light leakage in the range of 780-1000 nm with a center wavelength of
Determining the center wavelength to be 876nm; corresponding film thickness adjustment coefficient alpha 3 876nm/600 nm=1.46.
In the third comparative example, the difference from the second comparative example is only for the coefficient α 1 、α 2 And alpha 3 Taking 0.7, 1.1 and 1.4 respectively, and randomly acquiring the coefficients, namely determining the film thickness adjustment coefficients without the method according to the embodiment of the invention.
Fig. 11 is a diagram showing a filtering effect of a spectral imaging chip structure provided by the second comparative example, and fig. 12 is a diagram showing a filtering effect of a spectral imaging chip structure provided by the third comparative example, where it can be seen that the light leakage outside the free spectral range can be greatly suppressed by determining the film thickness adjustment coefficient by using the embodiment of the present invention. On the contrary, if the film thickness adjustment coefficient is not determined according to the method of the embodiment of the invention, although the cut-off filter film is added and the coefficient difference is small, the light leakage outside the free spectrum range is difficult to be well inhibited, and even the light leakage problem cannot be solved.
As an twenty eighth embodiment of the present invention, taking λ as the center wavelength of 650nm as an example, and taking the first comparative example as the case where no cut-off filter is added, the filtering effect is as shown in fig. 13, it can be seen that narrow-band filtering is achieved only in the range of 575nm to 740nm, and very serious light leakage occurs in both the spectral ranges of 500nm to 575nm and 750nm to 900nm, which is very serious light leakage for the SI-based detector in the response 500nm to 900nm spectral range, and suppression is required for the two spectral ranges.
In the second comparative example of the twenty-eighth embodiment, the light leakage spectrum is designed in the narrow band according to 500nm to 575nm and 750nm to 900nmTwo layers of cut-off filter films are integrally deposited on the filter film, wherein one layer is used for inhibiting light leakage in the range of 500-575 nm, and the center wavelength is
Determining the central wavelength as 534.88nm; corresponding film thickness adjustment coefficient alpha 1 534.88nm/650 nm=0.82; similarly, another layer suppresses light leakage in the range of 750nm to 900nm with a center wavelength of +.>
Determining the central wavelength as 818.18nm; corresponding film thickness adjustment coefficient alpha 2 818.18nm/650 nm=1.26. />
In the third comparative example, the difference from the second comparative example is only for the coefficient α 1 And alpha 2 Taking 0.7 and 1.4 respectively, and randomly acquiring the coefficients, namely determining the film thickness adjustment coefficients without the method according to the embodiment of the invention.
Fig. 14 is a diagram showing a filtering effect of a spectral imaging chip structure provided by the second comparative example, and fig. 15 is a diagram showing a filtering effect of a spectral imaging chip structure provided by the third comparative example, where it can be seen that the light leakage outside the free spectral range can be greatly suppressed by determining the film thickness adjustment coefficient by using the embodiment of the present invention. On the contrary, if the film thickness adjustment coefficient is not determined according to the method of the embodiment of the invention, although the cut-off filter film is added and the coefficient difference is small, the light leakage outside the free spectrum range is difficult to be well inhibited, and even the light leakage problem cannot be solved.
As a twenty-ninth embodiment of the present invention, there is provided a line-scan type spectral imaging system, which is further defined on the basis of the first embodiment, the spectral imaging chip structure further including a cut-off filter which is attached to the transition layer 40, the cut-off filter being for cutting off an interference band. The embodiment further comprises a cut-off filter in the spectral imaging chip structure, wherein the cut-off filter is adhered to the narrow-band filter, so that the chip structure is ensured to cut off an interference wave band, and the processing technology is greatly simplified.
In the prior art, the spectrum imaging has the advantages of providing more input color information quantity and having unique color reproduction due to the multiple spectrum segments and high spectrum resolution. However, the requirements on the process are high when the integrated snapshot is realized, a certain information redundancy exists due to excessive spectrum information, and the resolution of the imaged image is lost to a certain extent due to the fact that the number of spectrum is large.
In a conventional RGB image sensor, a bayer array is attached to a pixel photosensitive unit of the image sensor, and the bayer array is composed of an RGB wide-spectrum filter array, as shown in fig. 19, and is composed of an RGGB 2×2 pixel array periodically arranged, so that a gray image can be finally converted into a color image.
In the conventional RGB image sensor, there is a certain color distortion in photographing, because in the conventional image sensor, there are only three wide-band filter responses of RGB, and the amount of color information input in color reproduction is insufficient to completely reproduce color information in a real environment, so there is a color distortion.
As a thirty-first embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined as a spectral imaging chip structure on the basis of the first embodiment, in which the spectral imaging chip structure further includes a plurality of bayer arrays located on the pixel light-sensing unit 10, the bayer arrays periodically arranged in a plurality of columns of FP cavity structures being distributed on the pixel light-sensing unit 10 at intervals in the spectral dimension direction.
In the thirty-third embodiment of the present invention, the spectral imaging chip structure provided in the present embodiment has all the advantages of the spectral imaging chip structure as in the first embodiment, and at the same time, the embodiment combines the advantages of the spectral imaging chip and the RGB image sensor, and by distributing the bayer array periodically arranged in a plurality of columns of FP cavity structures on the pixel photosensitive unit 10 along the spectral dimension direction, the high-resolution imaging of the common RGB image sensor can be combined while the spectral imaging is realized, and the color reduction effect and the image resolution of the image are improved.
As a thirty-first embodiment of the present invention, there is provided a line-scan spectral imaging system, which is further defined on the basis of the thirty-first embodiment, in which a bayer array in which a plurality of columns of FP cavity structures are periodically arranged is distributed on a pixel light-sensing unit 10 at intervals in a spectral dimension direction. In this embodiment, bayer arrays are periodically arranged between two columns of FP cavity structures, which have a simple manufacturing process, while facilitating uniform collection and analysis of spectral information. As shown in FIG. 20, a Bayer array in which a plurality of columns of periodically arranged FP cavity structures are arranged on the whole pixel photosensitive unit at intervals along the spectral dimension direction, wherein lambda 1 、λ 2 … … lambdan are FP cavity structures, and bayer arrays are arranged between the FP cavity structures. The bayer array is periodically arranged and distributed among FP cavity structures. The FP cavity structure of each column is of one wavelength, and the FP cavity structures of n spectral wavelengths are distributed on the whole pixel array surface. The number of n depends on the application scene of the chip, and the customized design can be carried out, wherein the value range is more than 2 and less than the total column number of the whole pixel array.
As a thirty-second embodiment of the present invention, as shown in fig. 21, there is provided a line-scan type spectral imaging system, which is further defined on the basis of the thirty-first embodiment, in which the number of columns of the interval between any two adjacent columns of FP cavity structures is not less than 4. Since a typical bayer array is a 4×4 array, which is composed of 8 green, 4 blue and 4 red pixels, 9 operations are performed in a 2×2 matrix when converting a gray pattern into a color picture, and finally a color pattern is generated. Therefore, the number of columns of the interval between any two adjacent columns of FP cavity structures is generally not less than 4, so that the image analysis and calculation are facilitated. As shown in fig. 21, the number of the spaced columns between any two adjacent FP cavity structures is 8.
As a thirty-third embodiment of the present invention, there is provided a line-scan spectral imaging system, which is based on the above-described embodiment, in which the specific structure of the bayer array is further defined, and in this embodiment, the bayer array is one of an RGGB color filter structure, a RYYB color filter structure, or an RGWB color filter structure. The particular configuration of the bayer array may be selected in practice according to the particular application environment.
As a thirty-fourth embodiment of the present invention, a line scanning type spectral imaging system is provided, which is based on the above embodiment, and further limits the preparation of a bayer array, in which the bayer array can be prepared on a pixel photosensitive unit by an integrated semiconductor compatible process, and the preparation method is low in cost and is beneficial to popularization and use.
As a thirty-fifth embodiment of the present invention, as shown in fig. 22, a line-scan type spectral imaging system is provided, which is further defined on the basis of the above-mentioned embodiment, and in this embodiment, the line-scan type spectral imaging system further includes an imaging lens group, a sensor adapter plate, an embedded information processing plate, a push-scan system, and an upper computer, where the imaging lens group is used for transmitting light within a spectral range index of the spectral imaging system, and collecting the transmitted light on the sensor adapter plate; the sensor adapter plate is used for carrying at least one spectrum imaging chip structure, and light transmitted by the imaging lens group is converged on the spectrum imaging chip structure on the sensor adapter plate; the embedded information processing board is connected with the sensor adapter plate and is used for supplying power to the sensor adapter plate and performing signal interaction, and processing and integrating image information of the sensor adapter plate; the push-broom system is used for carrying a sensor adapter plate and an embedded information processing plate, and moves push-broom along the direction of the spectrum dimension; the upper computer is respectively connected with the push-broom system and the embedded information processing board, and is used for controlling the mobile push-broom of the push-broom system and acquiring a complete spectrum image according to the image information integrated by the embedded information processing board.
In a thirty-fifth embodiment of the present invention, the line-scan spectral imaging system achieves acquisition of a spectral image by mounting at least one spectral imaging chip structure on a sensor interposer, in combination with an imaging lens group, a sensor interposer, an embedded information processing board, a push-scan system, and an upper computer. The line scanning type spectrum imaging system provided by the embodiment has the advantages that the line scanning type spectrum imaging system has the advantages that gaps are not formed among the first cut-off filter film, the narrow-band filter film and the pixel photosensitive units, the spectrum transmittance is high, the energy loss is reduced, the one-step preparation process is integrated, the line scanning type spectrum imaging system is not polluted by external environment, the firmness is better, the preparation efficiency and the integration level are higher, the quantum efficiency and the spectrum transmittance are greatly improved, and the spectrum resolution capability of the line scanning type spectrum imaging system can be effectively improved.
As a thirty-sixth embodiment of the present invention, there is provided a line-scan type spectroscopic imaging system, which is further defined on the basis of the above-described embodiment, in which the embedded information processing board may be connected to the sensor patch panel through a flexible circuit board (Flexible Printed Circuit, FPC) or a board-to-board connector, and the embedded information processing board may employ an FPGA or an SoC chip. The stable electric connection and signal transmission between the embedded information processing board and the sensor adapter board can be realized through the flexible circuit board or the board-to-board connector.
As a thirty-seventh embodiment of the present invention, there is provided an imaging method of a line-scan spectral imaging system that performs spectral imaging using the line-scan spectral imaging system as described above, in which the imaging method of the line-scan spectral imaging system includes: the upper computer controls the push-broom system to move along the direction of the spectrum dimension according to the preset push-broom speed; after the moving speed of the push-broom system is stable, the embedded information processing board acquires at least one spectrum imaging chip structure image at a preset frame rate, integrates the images and uploads the images to the upper computer; and the upper computer extracts a specific spectrum part in each frame of image and splices the specific spectrum part to acquire a complete spectrum image of the spectrum part in a scanning range. By applying the imaging method of the line-scan type spectrum imaging system, the quantum efficiency and the spectrum transmittance are greatly improved, and the spectrum resolution capability of the line-scan type spectrum imaging system can be effectively improved.
As a thirty-eighth embodiment of the present invention, there is provided an imaging method of a line-scan spectral imaging system, which is further defined on the basis of the forty-second embodiment, in which the preset push-scan speed satisfies V min ≥L/f frame Wherein V is min For a minimum preset push-broom speed of the push-broom system, L is the length of the FP cavity step width mapped onto the imaging object plane, L/l=d/f focus =2tan θ, l is the step width, D is the distance from the optical center of the imaging lens set to the object plane, f focus For the focal length of the imaging lens group, θ is the angle of view of the imaging lens group, f frame Is the image frame rate.
Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
In addition, the terms "first", "second", etc. are used to define the components, and are only for convenience of distinguishing the corresponding components, and the terms have no special meaning unless otherwise stated, and therefore should not be construed as limiting the scope of the present invention.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (13)
1. A line swept spectrum imaging system, the line swept spectrum imaging system comprising at least one spectrum imaging chip structure, the spectrum imaging chip structure comprising:
the pixel photosensitive unit (10), the said pixel photosensitive unit (10) is used for realizing the image acquisition and data readout;
the first matching layer (50) is integrally deposited and grown on the pixel photosensitive unit (10), and the first matching layer (50) is used for improving the central wavelength transmittance of the spectrum imaging chip structure;
A narrow-band filter film (20), wherein the narrow-band filter film (20) is integrally deposited and grown on the first matching layer (50), and the narrow-band filter film (20) is used for realizing the tunability of the center wavelength of a required wave band; the narrow-band filter film (20) comprises a plurality of FP cavity structures which are distributed in a line scanning mode, the heights of the plurality of FP cavity structures along the direction of the spectrum dimension are different, and the heights of the plurality of FP cavity structures along the direction of the space dimension are the same; at least one spectral imaging chip structure is arranged in a line along the spectral dimension direction.
2. The line swept spectral imaging system of claim 1, wherein the spectral imaging chip structure further comprises a second matching layer integrally deposited on the narrow band filter film (20), the second matching layer for increasing a center wavelength transmittance of the spectral imaging chip structure.
3. The line scan spectral imaging system of claim 1, wherein the spectral imaging chip structure further comprises:
a transition layer (40), the transition layer (40) being integrally deposited on the narrow band filter film (20);
the first cut-off filter film (30), the first cut-off filter film (30) is integrally deposited and grown on the transition layer (40), and the first cut-off filter film (30) is used for cutting off a first interference wave band;
A second cut-off filter film (60), the second cut-off filter film (60) being disposed on the first cut-off filter film (30), the second cut-off filter film (60) being configured to cut off a second interference band, the second interference band being different from the first interference band;
and a third cut-off filter film (70), wherein the third cut-off filter film (70) is arranged on the second cut-off filter film (60), and the third cut-off filter film (70) is used for cutting off a third interference wave band, and the third interference wave band is different from the first interference wave band and the second interference wave band.
4. A line swept spectral imaging system according to claim 3, wherein the second cut-off filter film (60) is adhesively arranged on the first cut-off filter film (30).
5. A line swept spectral imaging system according to claim 3, wherein the second cut-off filter film (60) is integrally deposited on the first cut-off filter film (30).
6. The line-scan spectral imaging system of claim 4 or 5, wherein the third cut-off filter film (70) is adhesively disposed on the second cut-off filter film (60).
7. The line swept spectral imaging system of claim 5, wherein the third cutoff filter film (70) is integrally deposited on the second cutoff filter film (60).
8. The line scan spectral imaging system of claim 1, wherein the spectral imaging chip architecture further comprises a cutoff filter that is adhesively disposed on the transition layer (40), the cutoff filter for cutting off interference bands.
9. The line scan spectral imaging system of claim 1, wherein the spectral imaging chip structure further comprises a plurality of bayer arrays located on the pixel photosensitive unit (10), the bayer arrays periodically arranged in a plurality of columns of FP cavity structures distributed on the pixel photosensitive unit (10) at intervals along a spectral dimension direction.
10. The line scan spectral imaging system of claim 9, wherein the bayer array is one of an RGGB color filter structure, RYYB color filter structure, or an RGWB color filter structure.
11. The line swept spectrum imaging system of claim 1, further comprising:
the imaging lens group is used for transmitting light in the spectrum range index of the spectrum imaging system;
the sensor adapter plate is used for carrying at least one spectrum imaging chip structure, and light transmitted by the imaging lens group is converged on the spectrum imaging chip structure on the sensor adapter plate;
The embedded information processing board is connected with the sensor adapter plate and is used for carrying out power supply and signal interaction on the sensor adapter plate and processing and integrating image information of the sensor adapter plate;
the push-broom system is used for carrying the sensor adapter plate and the embedded information processing plate and moving the push-broom along the spectral dimension direction;
the upper computer is respectively connected with the push-broom system and the embedded information processing board and is used for controlling the mobile push-broom of the push-broom system and acquiring a complete spectrum image according to the image information integrated by the embedded information processing board.
12. An imaging method of a line-scan spectral imaging system, wherein the imaging method of the line-scan spectral imaging system performs spectral imaging by using the line-scan spectral imaging system according to claims 1 to 11, and the imaging method of the line-scan spectral imaging system comprises:
the upper computer controls the push-broom system to move along the direction of the spectrum dimension according to the preset push-broom speed;
after the moving speed of the push-broom system is stable, the embedded information processing board acquires at least one spectrum imaging chip structure image at a preset frame rate, integrates the images and uploads the images to the upper computer;
And the upper computer extracts a specific spectrum part in each frame of image and splices the specific spectrum part to acquire a complete spectrum image of the spectrum part in a scanning range.
13. The method of imaging a line scan spectral imaging system of claim 12, wherein the predetermined push scan speed satisfies V min ≥L/f frame Wherein V is min For a minimum preset push-broom speed of the push-broom system, L is the length of the FP cavity step width mapped onto the imaging object plane, L/l=d/f focus =2tan θ, l is the step width, D is the distance from the optical center of the imaging lens set to the object plane, f focus For the focal length of the imaging lens group, θ is the angle of view of the imaging lens group, f frame Is the image frame rate.
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