WO2022111459A1

WO2022111459A1 - Chip structure, camera assembly, and electronic device

Info

Publication number: WO2022111459A1
Application number: PCT/CN2021/132366
Authority: WO
Inventors: 杨子东
Original assignee: 维沃移动通信有限公司
Priority date: 2020-11-30
Filing date: 2021-11-23
Publication date: 2022-06-02
Also published as: CN112510057A

Abstract

Disclosed are a chip structure, a camera assembly, and an electronic device, which belong to the technical field of terminals. The chip structure comprises a substrate, on which pixel units that are distributed in an array are arranged, wherein each of the pixel units is provided with sub-pixels; each of the sub-pixels is provided with at least two resonant structures; each of the resonant structures is provided with a resonant cavity; and the at least two resonant structures in each of the sub-pixels are arranged at intervals in the thickness direction of the substrate.

Description

Chip structures, camera assemblies and electronic devices

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Chinese Patent Application No. 202011380432.1 filed in China on Nov. 30, 2020, the entire contents of which are incorporated herein by reference.

technical field

The present application belongs to the technical field of terminals, and specifically relates to a chip structure, a camera assembly and an electronic device.

Background technique

Users have higher and higher requirements for mobile smart terminal experience, higher requirements for cameras, and more and more functions provided by cameras. In conventional camera chips, each pixel allows one type of light to pass through, but the passband is wide and the color is not pure enough. The final color restoration of the subject is not accurate enough, it is difficult to obtain high-precision color information, and the camera effect is not good.

SUMMARY OF THE INVENTION

The purpose of the embodiments of the present application is to provide a chip structure, a camera assembly, and an electronic device, which are used to solve the problems of a wide passband in an existing camera chip, difficulty in obtaining high-precision color information, and poor camera effect.

In order to solve the above technical problems, this application is implemented as follows:

The embodiment of the present application provides a chip structure, including:

A substrate having pixel units distributed in an array on the substrate, each of the pixel units having sub-pixels, each of the sub-pixels having at least two resonant structures, and each of the resonant structures having a resonant cavity , at least two of the resonant structures in each of the sub-pixels are spaced apart along the thickness direction of the substrate.

Wherein, the length of each resonant cavity in the thickness direction of the substrate can be adjusted.

Wherein, each of the pixel units includes at least two of the sub-pixels, and the wavelengths of light filtered by the resonant structures in the sub-pixels in each of the pixel units are different.

Wherein, the resonant cavity is filled with light-transmitting filler, and the length of the light-transmitting filler in the thickness direction of the substrate and/or the refractive index of the light-transmitting filler can be adjusted.

Wherein, the light-transmitting filler includes electrostrictive polymer and/or electro-optic effect polymer.

Wherein, the resonant structure includes:

light-transmitting substrate;

a light-transmitting conductive layer, the light-transmitting substrate and the light-transmitting conductive layer are arranged in parallel and spaced apart, a first reflective layer is provided on the surface of the light-transmitting substrate near the light-transmitting conductive layer, and the light-transmitting substrate is A second reflective layer is provided on a surface of the conductive layer close to the light-transmitting substrate, and the first reflective layer is spaced apart from the second reflective layer to form the resonant cavity.

Wherein, the chip structure further includes:

A light condensing structure is provided on the side of the substrate facing the pixel unit.

Wherein, the chip structure further includes:

A photosensitive element, each of the sub-pixels has the photosensitive element respectively, and at least two of the resonance structures in each of the sub-pixels are located between the light-converging structure and the photosensitive element.

Wherein, the chip structure further includes:

A wiring layer, the photosensitive elements are respectively electrically connected to the wiring layer.

Embodiments of the present application further provide a camera assembly, including the chip structure described in the foregoing embodiments.

Embodiments of the present application further provide an electronic device, including the camera assembly described in the foregoing embodiments.

A chip structure according to an embodiment of the present application includes: a substrate, on which there are pixel units distributed in an array, each of the pixel units has sub-pixels, and each of the sub-pixels has at least two resonance structures , each of the resonant structures has a resonant cavity, and at least two of the resonant structures in each of the sub-pixels are spaced apart along the thickness direction of the substrate. In the chip structure of the present application, each of the sub-pixels has at least two resonant structures, each of the resonant structures has a resonant cavity, and a narrow-band filter function can be realized through the multi-stage resonant cavity, so that the light transmission through The light band is highly concentrated, so that the light of a specific band is transmitted, and the color accuracy is high, so that high-precision color information can be obtained, and the camera effect can be improved.

Description of drawings

1 is a schematic structural diagram of a chip structure in an embodiment of the present application;

Fig. 2 is a structural schematic diagram of the resonance structure in the embodiment of the present application;

Fig. 3 is another structural schematic diagram of the resonance structure in the embodiment of the present application;

Fig. 4 is another structural schematic diagram of the resonance structure in the embodiment of the present application;

Fig. 5 is a schematic diagram of the image formation fusion map obtained by the acquisition of light of different wavelength bands;

Fig. 6 is a schematic diagram of conventional pixel primary color arrangement;

Fig. 7 is a schematic diagram of pixel primary color arrangement in the chip structure in the present application;

FIG. 8 is a filter map of a conventional camera chip;

Fig. 9 is the filter spectrum of the chip structure in the present application;

Figure 10 is a schematic diagram of the multi-beam interference of light between two substrates;

Figure 11 is a schematic diagram of the spectroscopic properties of a Fabry-Perot cavity;

FIG. 12 is a schematic diagram of the filtering process of the chip structure in the present application.

reference number

substrate 10;

resonant cavity 20;

light-transmitting substrate 30;

light-transmitting conductive layer 40; first reflective layer 41; second reflective layer 42;

Concentrating structure 50;

photosensitive element 60;

wiring layer 70;

The first transparent substrate 81 ; the third reflection layer 82 ; the second transparent substrate 83 ; the fourth reflection layer 84 .

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

The terms "first", "second" and the like in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It is to be understood that data so used may be interchanged under appropriate circumstances so that embodiments of the application can be practiced in sequences other than those illustrated or described herein. In addition, "and/or" in the description and claims indicates at least one of the connected objects, and the character "/" generally indicates that the associated objects are in an "or" relationship.

The chip structure provided by the embodiments of the present application will be described in detail below with reference to FIGS. 1 to 12 , through specific embodiments and application scenarios.

As shown in FIG. 1 , a chip structure according to an embodiment of the present application includes a substrate 10 on which there are pixel units distributed in an array, each pixel unit has sub-pixels, and each sub-pixel has at least two resonances Each resonant structure has a resonant cavity 20 , and at least two resonant structures in each sub-pixel are spaced apart along the thickness direction of the substrate 10 . The substrate 10 may be a light-transmitting substrate, and each pixel unit may have one or at least two sub-pixels, for example, each pixel unit may have three or four sub-pixels. At least two sub-pixels in each pixel unit may be spaced apart, for example, each pixel unit has four sub-pixels, and the four sub-pixels may be distributed in an array. Each sub-pixel may have at least two resonant structures, for example, each sub-pixel has two resonant structures, each resonant structure has one resonant cavity 20 , and the two resonant structures in each sub-pixel are along the thickness of the substrate 10 The directions are spaced apart, and unnecessary light can be filtered by the resonator cavities 20 in at least two resonant structures in each sub-pixel, so that light in a narrower wavelength band can be transmitted. In the chip structure of the present application, there are at least two resonant structures in each of the sub-pixels, and each of the resonant structures has a resonant cavity 20 , and the filtering function of a narrower wavelength band can be realized through the multi-stage resonant cavity 20 . , so that the transmitted light band is highly concentrated, so that the light in a specific band is transmitted, and the color accuracy is high, so that high-precision color information can be obtained, and the imaging effect can be improved.

In some embodiments, the length of each resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted. The length of each resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted individually, and the length of the resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted according to the wavelength of the light to be filtered, so that light in a specific wavelength band can be transmitted through However, the color accuracy is high. Unlike conventional cameras, each pixel can only capture one of R-G-B (representing red light-green light-blue light), each pixel unit of the chip structure in this application can be adjusted by adjusting the resonant cavity 20 to capture the full spectrum. For light in a single wavelength band, for example, the wavelength band of light to be captured (eg, visible light, infrared light and ultraviolet light) can be changed by adjusting the lengths of at least two resonant cavities 20 in the thickness direction of the substrate 10 .

In the actual application process, an interference filter structure that can filter light is made according to the principle of beam interference between parallel substrates. As shown in FIG. 4 , the chip structure may be composed of two parallel spaced apart first light-transmitting substrates 81 and second light-transmitting substrates 83 . The first light-transmitting substrate 81 and the second light-transmitting substrate 83 are glass or quartz plates. The opposite surfaces of the first transparent substrate 81 and the second transparent substrate 83 respectively have conductive circuits or conductive layers, and a third reflective layer 82 is provided on the opposite side of the first transparent substrate 81 and the second transparent substrate 83 , a fourth reflective layer 84 is arranged on the opposite side of the second light-transmitting substrate 83 and the first light-transmitting substrate 81, thereby defining the resonant cavity 20, the third reflective layer 82 and the fourth reflective layer 84 can transmit light, and can The light in the cavity 20 is reflected. A dielectric material can be filled in the resonant cavity 20, and the length of the filled dielectric material in the thickness direction and the refractive index of the dielectric material can be adjusted, such as an electrostrictive polymer. The principle of _multi -beam interference can be shown in Fig. 10. The length of the resonant cavity ₂₀ in the thickness direction of the substrate can be h. Reflection (such as ray 1) occurs, the refraction angle of the light incident into the medium with the refractive index n is θ ₂ , and the light entering the medium with the refractive index n exits and enters the medium with the refractive index n _0. During the whole process The reflected beam 2, reflected beam 3, reflected beam 4 and transmitted beam 1', transmitted beam 2', and transmitted beam 3' have relatively close light intensities, so multi-beam interference phenomenon can occur.

The resonant cavity 20 may be a Fabry-Perot cavity, and the spectral characteristics of the Fabry-Perot cavity are shown in FIG. 11 , and there are several peaks. Under the action of an applied voltage, the length of the resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 changes, so that the wavelength of the transmission peak of the resonant cavity 20 shifts. The two resonant cavities of each pixel unit can be electrically connected to the display screen. Under the action of an applied voltage, the length of the resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 changes, so that the The wavelength of the transmission peak of each resonant cavity 20 is shifted, and the length of each resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 can be controlled respectively by controlling the voltage, so that the two resonant cavities The transmission peak wavelength shifts.

By designing parameters so that the wavelength position of one transmission peak of the two resonators 20 is the same, and the other transmission peaks are different, only the light waves with the same peak can pass through, and the light waves of other wavelengths cannot pass. By adjusting the voltage, the transmission peak of each resonator 20 can be shifted in the same way, and the transmission wavelength of the system can be shifted to realize tunable filtering. The filtering process of transmittance is shown in FIG. 12 .

In the embodiments of the present application, each pixel unit includes at least two sub-pixels, for example, each pixel unit includes three or four sub-pixels, and the resonant structure in the sub-pixels in each pixel unit filters The wavelengths of light are different. For example, the light filtered by the resonant structure in the sub-pixels in each pixel unit is red light, blue light and green light, and the obtained light has a pure color and high accuracy.

In the embodiment of the present application, the resonant cavity 20 may be filled with light-transmitting fillers, and the length of the light-transmitting fillers in the thickness direction of the substrate 10 and/or the refractive index of the light-transmitting fillers can be adjusted. The length of the light filler in the thickness direction of the substrate 10 and/or the refractive index of the light-transmitting filler can adjust the wavelength of light that the resonant cavity 20 can filter.

Optionally, the light-transmitting filler can include electrostrictive polymers and/or electro-optic effect polymers, and the electrostrictive polymers can expand and contract along a certain direction when electrified, such as along the thickness direction of the substrate 10 . , so that the length of the resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted, thereby adjusting the wavelength of the light that the resonant cavity 20 can filter.

In the embodiment of the present application, as shown in FIG. 3 , the resonant structure may include a light-transmitting substrate 30 and a light-transmitting conductive layer 40 . The light-transmitting substrate 30 may be a flat glass with a conductive circuit on the surface, and the flat glass faces the light-transmitting conductive layer. A conductive circuit may be provided on one side surface of the layer 40, the light-transmitting conductive layer 40 may be arranged on a glass plate, the light-transmitting substrate 30 and the light-transmitting conductive layer 40 are arranged in parallel and spaced apart, and the light-transmitting substrate 30 is close to the light-transmitting conductive layer 40. A first reflective layer 41 is provided on one side surface of the light-transmitting conductive layer 40, a second reflective layer 42 is provided on the side surface of the light-transmitting conductive layer 40 close to the light-transmitting substrate 30, and the first reflective layer 41 and the second reflective layer 42 are spaced apart to form a resonance In the cavity 20 , the first reflective layer 41 and the second reflective layer 42 play the role of reflecting light in the resonant cavity 20 . Wherein, at least one of the light-transmitting substrate 30 and the light-transmitting conductive layer 40 can move along the thickness direction of the substrate 10 , and at least one of the light-transmitting substrate 30 and the light-transmitting conductive layer 40 can move along the thickness direction of the substrate 10 . The distance between the light-transmitting substrate 30 and the light-transmitting conductive layer 40 is adjusted to adjust the length of the resonant cavity 20 in the thickness direction of the substrate 10 . The resonant cavity 20 can be filled with an electrostrictive polymer, and under the condition of electrification, the electrostrictive polymer can expand and contract, and at least one of the transparent substrate 30 and the transparent conductive layer 40 is driven by the expansion and contraction of the electrostrictive polymer. One moves along the thickness direction of the substrate 10 , thereby adjusting the length of the resonant cavity 20 in the thickness direction of the substrate 10 .

In some embodiments, as shown in FIG. 1 , the chip structure may further include a light concentrating structure 50 . The light concentrating structure 50 is disposed on the side of the substrate 10 facing the pixel unit, and the light is condensed by the light concentrating structure 50 and then projected to the pixel. The resonant cavity 20 in the unit, and then the undesired light is filtered through the resonant cavity 20 . The light condensing structure 50 can be a micro lens, which can be located on the top of the substrate, and the light condensing structure 50 can play the role of concentrating light and increasing the amount of incoming light.

In other embodiments, as shown in FIG. 1 , the chip structure may further include a photosensitive element 60 , for example, the photosensitive element 60 may be a photodiode, each sub-pixel has a photosensitive element 60 respectively, and at least two resonances in each sub-pixel The structure is located between the light concentrating structure 50 and the photosensitive element 60. The light filtered by the resonant cavity 20 can be received by the photosensitive element 60, and the photosensitive element 60 converts the received light signal (such as light intensity) into an electrical signal.

Optionally, as shown in FIG. 1 , the chip structure may further include a wiring layer 70 , the photosensitive elements 60 are respectively electrically connected to the wiring layer 70 , and the wiring layer 70 can be provided with the circuit of the chip, and the photosensitive element can be connected to the wiring layer 70 through the wiring layer 70 . In the signal transmission processing module of the element 60, the required image is obtained by processing the signal through the processing module.

In the embodiments of the present application, for example, as shown in FIG. 1 and FIG. 2 , each sub-pixel has two resonant structures, each resonant structure has a resonant cavity 20 , and the resonant structure located above has a resonant cavity 20 It is a first-level resonant cavity, the resonant cavity 20 of the resonant structure located below is a second-level resonant cavity, the two resonant structures in each sub-pixel are spaced apart along the thickness direction of the substrate 10, and the multi-level resonator structures on each pixel unit The resonators can be individually adjusted.

Among them, the first-level resonant cavity is placed above the second-level resonant cavity, and the transmission of different bands can be achieved by controlling the distance between the two substrates; the second-level resonant cavity is placed below the first-level resonant cavity, and different bands can be realized by controlling the distance between the two substrates. through. There is a corresponding relationship between the wavelength band of light and the color of light. The light of different wavelength bands is different color. The light emitted by the object is filtered by the pixel unit resonator to become a single wavelength band light, that is, a single color light. The camera pixel unit adjusts the voltage to make it. The lengths (A and a) of the two resonant cavities in the thickness direction of the substrate 10 change, so that the wavelength band of the light transmitted through the joint action of the primary resonant cavity and the secondary resonant cavity can be adjusted, so that the emitted light in the object can be adjusted. The light in the wavelength band corresponding to the color of the light passes through, and the light in other wavelength bands is filtered out. Therefore, by controlling the lengths of the first-level resonant cavity and the second-level resonant cavity of each pixel unit in the thickness direction of the substrate 10, different acquisitions can be achieved. color, so as to achieve high-precision color display.

For example, when a pixel unit is to be used as a red pixel of the same conventional camera chip, the length A of the primary resonant cavity of the pixel unit i in the thickness direction of the substrate 10 is adjusted by voltage to be A1, and the secondary resonance is adjusted at the same time. The length a of the cavity in the thickness direction of the substrate 10 is set to be a1, so that only red light can pass through; when it is to be used as a green pixel of the same conventional camera chip, the first-order resonant cavity of the pixel unit i is adjusted by voltage at The length A in the thickness direction of the substrate 10 is set to be A2, and the length a of the secondary resonant cavity in the thickness direction of the substrate 10 is adjusted to be a2, so that only green light can pass through; when using When used as the blue pixel of the conventional camera chip, the length A of the first-level resonant cavity of the pixel unit i in the thickness direction of the substrate 10 is adjusted by voltage to be A3, and the thickness of the second-level resonant cavity in the substrate 10 is adjusted at the same time. The length a in the direction is a3, so that only blue light can pass through; and so on, to receive different colors of light, adjust the length A of the primary resonant cavity in the thickness direction of the substrate 10 and the secondary resonance The length a of the cavity in the thickness direction of the substrate 10 allows the light of the corresponding color (wavelength band) to pass through, and the other color (wavelength band) light is filtered out, thereby obtaining high-precision color information and improving the quality of the captured image.

In the application process, the light reflected by the object not only includes visible light, but also light other than visible light, such as infrared, ultraviolet, etc. These lights contain information unique to the material, and the material can be identified by analyzing this information. When taking pictures, the secondary resonant cavity can be adjusted so that light of different wavelength bands can be captured and imaged by the chip. As shown in Figure 5, one image is taken when corresponding to light of different wavelength bands (for example, images P1, P2, P3, P4). and P5), and finally through algorithm fusion, a fusion graph is obtained, which can realize special functions such as substance recognition.

With the chip structure in the present application, more colors can be used as primary colors to restore the color of the shot. As shown in Figure 6, the traditional color scheme is based on the three primary colors of R-G-B to restore the color of the subject; as shown in Figure 7, this application can achieve richer colors as primary colors, for example, R(R1, R2, R3, R4)- G(G1, G2, G3, G4)-B(B1, B2, B3, B4), can restore the color of the subject more accurately.

The chip structure in the present application can achieve accurate color restoration of the subject. By adjusting the secondary resonant cavity of each pixel unit of the chip structure in the present application, the filter function can be realized. The filtering map of the present application is shown in Figure 9; The filter spectrum of the chip is shown in Figure 8, in which the curve R represents red light, the curve G represents green light, and the curve B represents blue light. It can be seen from Figure 8 that the light band that the traditional filter chip can pass is not concentrated enough, and R-G-B three The color is not pure enough; comparing Fig. 8 and Fig. 9, it can be seen that the three color light bands of R-G-B in this application are highly concentrated, and the color filtering accuracy is much better than the traditional filtering scheme, and it can receive accurate R-G-B three colors of light for accurate restoration. The color of the object being colored.

Embodiments of the present application provide a camera assembly, including the chip structure described in the foregoing embodiments. The camera assembly with the chip structure in the above embodiment can accurately acquire the color information of the object to be photographed, thereby improving the photographing effect.

Embodiments of the present application provide an electronic device, including the camera assembly described in the foregoing embodiments. The electronic device with the camera assembly in the above embodiment has good shooting effect, high image quality, and improves the shooting experience of the user.

The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of this application, without departing from the scope of protection of the purpose of this application and the claims, many forms can be made, which all fall within the protection of this application.

Claims

A chip structure comprising:

A substrate having pixel units distributed in an array on the substrate, each of the pixel units having sub-pixels, each of the sub-pixels having at least two resonant structures, and each of the resonant structures having a resonant cavity , at least two of the resonant structures in each of the sub-pixels are spaced apart along the thickness direction of the substrate.
The chip structure of claim 1, wherein the length of each of the resonant cavities in the thickness direction of the substrate is adjustable.
The chip structure according to claim 1, wherein each of the pixel units includes at least two of the sub-pixels, and the light filtered by the resonant structure in the sub-pixels in each of the pixel units has a different wavelengths.
The chip structure according to claim 1, wherein the resonant cavity is filled with light-transmitting filler, the length of the light-transmitting filler in the thickness direction of the substrate and/or the light-transmitting filler The refractive index can be adjusted.
The chip structure according to claim 4, wherein the light-transmitting filler comprises electrostrictive polymer and/or electro-optic effect polymer.
The chip structure according to any one of claims 1-5, wherein the resonant structure comprises:

light-transmitting substrate;

a light-transmitting conductive layer, the light-transmitting substrate and the light-transmitting conductive layer are arranged in parallel and spaced apart, a first reflective layer is provided on the surface of the light-transmitting substrate near the light-transmitting conductive layer, and the light-transmitting substrate is A second reflective layer is provided on a surface of the conductive layer close to the light-transmitting substrate, and the first reflective layer is spaced apart from the second reflective layer to form the resonant cavity.
The chip structure of claim 1, further comprising:

A light condensing structure is provided on the side of the substrate facing the pixel unit.
The chip structure of claim 7, further comprising:

A photosensitive element, each of the sub-pixels has the photosensitive element respectively, and at least two of the resonance structures in each of the sub-pixels are located between the light-converging structure and the photosensitive element.
The chip structure of claim 8, further comprising:

A wiring layer, the photosensitive elements are respectively electrically connected to the wiring layer.
A camera assembly, comprising the chip structure according to any one of claims 1-9.
An electronic device comprising the camera assembly as claimed in claim 10 .