CN115985882A - Graphic layer structure of thick aluminum ceramic lining plate and preparation method thereof - Google Patents
Graphic layer structure of thick aluminum ceramic lining plate and preparation method thereof Download PDFInfo
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- CN115985882A CN115985882A CN202310113310.3A CN202310113310A CN115985882A CN 115985882 A CN115985882 A CN 115985882A CN 202310113310 A CN202310113310 A CN 202310113310A CN 115985882 A CN115985882 A CN 115985882A
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 129
- 239000000919 ceramic Substances 0.000 title claims abstract description 113
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 77
- 239000002253 acid Substances 0.000 claims description 30
- 238000005406 washing Methods 0.000 claims description 30
- 238000000866 electrolytic etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 6
- 238000005554 pickling Methods 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000243 solution Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Abstract
The invention discloses a pattern layer structure of a thick aluminum ceramic lining plate and a preparation method thereof, relates to the field of semiconductor preparation, and aims to solve the problem of low pattern preparation precision of the thick aluminum ceramic lining plate, and the key points of the technical scheme are as follows: a pattern layer structure of a thick aluminum ceramic lining plate at least comprises a ceramic layer and a thick aluminum layer; the thick aluminum layer is provided with a pattern area and an arc area located below the pattern area, the arc area is in direct contact with the ceramic layer, an etching channel is formed in the pattern area, and an included angle formed by the side wall of the etching channel and the ceramic layer ranges from 70 degrees to 90 degrees; the arc-shaped area is provided with a step at the part of the etching channel. The pattern layer structure of the thick aluminum ceramic lining plate and the preparation method thereof can etch high-precision patterns.
Description
Technical Field
The invention relates to the field of semiconductor preparation, in particular to a pattern layer structure of a thick aluminum ceramic lining plate and a preparation method thereof.
Background
With the rapid development of electronic technology, electronic equipment tends to be increasingly integrated, miniaturized and lightened. The integration level of large-scale integrated circuits is higher and higher, and the high-power density packaging lining plate is more and more emphasized by the industry. The cermet lining plate is widely applied to a power electronic packaging structure as a thermoelectric separation packaging lining plate developed with high heat dissipation performance and excellent insulation property.
Compared with the same type of copper-clad ceramic lining plate, the aluminum-clad ceramic lining plate has better thermal shock resistance and thermal cycle resistance, and a device using the aluminum-clad ceramic lining plate as a packaging lining plate can have higher reliability and is widely applied to high-voltage large-current high-power devices in Japan. With the rapid development of the fields of domestic SiC, gaN semiconductors, rail transit, super charging piles of electric vehicles, high-voltage power transmission and the like, the iteration of semiconductor devices is accelerated, and the direction of large current also becomes the main development mainstream of future devices.
The main functions of the ceramic packaging lining plate are increasingly strict in requirements on current bearing, heat dissipation and reliability, and the technical development trend of large current (more than 500A) of a semiconductor device leads the thickness of a metal layer to develop towards the thickening direction, taking the copper thickness of a copper-clad ceramic lining plate as an example, the copper thickness of the copper-clad ceramic lining plate is developed in the direction of 0.8mm to 1.2mm, but the reliability requirement of the thick copper ceramic lining plate exceeds the physical limit of the material at present. Aluminum metal has natural low yield strength, and in a heavy-current semiconductor device with a thick metal layer, the aluminum-coated ceramic lining plate has the advantages of larger thermal cycle and higher thermal shock reliability, and is gradually favored.
At present, the etching technology of metal aluminum layer substrate products mainly takes an aluminum-based copper-clad plate (the thickness of a metal layer is less than 0.2mm, aluminum is used as a back plate and plays a role in heat dissipation, and the general requirement on the graphic precision of the back plate is not high) for low-power devices as a main part, and the etching of a thick aluminum ceramic lining plate directly adopts the existing wet etching process, so that the existing wet etching process has the defects of serious lateral etching, poor etching precision, and sawtooth at the edge of the graphic, and can not meet the graphic circuit preparation requirement of the thick aluminum ceramic lining plate. In the aluminum-coated ceramic lining plate with the thick aluminum metal layer, the thick aluminum layer is used as a conductive circuit layer, the circuit pattern is fine, and the reliability requirement is high, so that the pattern preparation etching technology of the high-precision thick aluminum ceramic lining plate is in urgent need of development.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a pattern structure of a thick aluminum ceramic lining plate, which can obtain a high-precision pattern after the pattern etching of the thick aluminum ceramic lining plate is completed.
The technical purpose of the invention is realized by the following technical scheme: a pattern layer structure of a thick aluminum ceramic lining plate at least comprises a ceramic layer and a thick aluminum layer; the thick aluminum layer is provided with a pattern area and an arc area located below the pattern area, the arc area is in direct contact with the ceramic layer, an etching channel is formed in the pattern area, and an included angle formed by the side wall of the etching channel and the ceramic layer is 70-90 degrees; the arc-shaped area is provided with a step at the part of the etching channel.
The invention is further configured to: the thickness of the thick aluminum layer is 0.6-1.6 mm, the minimum distance between the pattern areas is 0.4mm, and the precision is +/-0.1 mm.
The invention is further configured to: the thickness dimension of the etching channel is 75% -85% of the thickness of the thick aluminum layer, the dimension of the arc-shaped area is 15% -25% of the thickness of the thick aluminum layer, and the dimension of the extending step is 25-40 mu m.
The invention is further configured to: the thickness of the ceramic layer is 0.32-1.00mm.
The invention is further configured to: the ceramic layer is made of one of aluminum nitride, aluminum oxide and silicon nitride.
The invention also provides a method for preparing the graphic layer structure of the thick aluminum ceramic lining plate, which comprises the following steps:
s1: surface cleaning:
cleaning the aluminum-coated ceramic lining plate to remove oil stains and other impurities on the surface for later use;
s2: pattern transfer:
presetting a pattern A, arranging an acid-resistant mask on the surface of the aluminum-coated ceramic lining plate obtained in the step S1, exposing the aluminum-coated ceramic lining plate with the preset pattern A, and developing the copper-coated ceramic lining plate to obtain the aluminum-coated ceramic lining plate with the acid-resistant mask of the pattern A on the surface;
s3: electric etching pretreatment:
taking the aluminum-coated ceramic lining plate with the acid-resistant mask pattern A arranged on the surface, prepared in the step S2, as an anode, taking a copper plate as a cathode, placing the aluminum-coated ceramic lining plate in an electrolyte tank, and applying direct current between the cathode and the anode to perform electroetching, wherein the electroetching depth is 85 to 90 percent of the thickness of the thick aluminum layer;
s4: chemical etching:
taking the thick aluminum ceramic lining plate after the electro-etching treatment in the step S3, sequentially spraying and washing by using a horizontal etching line to finish etching, and etching to a ceramic substrate to finish precise pattern etching;
s5: removing the film and cleaning:
and (5) taking the etched aluminum-coated ceramic lining plate in the step (S4), removing the acid-resistant mask on the surface of the aluminum-coated ceramic lining plate by using alkali washing, and obtaining the aluminum-coated ceramic lining plate with the graph A after acid washing, water washing and drying.
The invention is further configured to: in the step S1, the cleaning includes alkali washing, acid washing, water washing, and drying in this order.
The invention is further configured to: in the step S1, the alkaline washing solution is NaOH solution with the concentration of 3-5%, the reaction temperature is room temperature, and the reaction time is 30-60s; the pickling solution for pickling is HNO with the concentration of 10 to 20 percent 3 The reaction temperature of the solution is room temperature, and the reaction time is 30 to 60s.
The invention is further configured to: in the step S3, copper plates are used as cathodes and are arranged on two sides of an anode, and a cathode plate and an anode plate are arranged in parallel, wherein the distance between the copper plates and the anode plate is 15-25mm.
The invention is further configured to: the etching solution for electroetching contains 50-150 g/L NaCl, 5-10 ml/L HCl and 5-10 ml/L H 3 PO 4 。
The invention is further configured to: the electroetching parameters are that the temperature of the electrolyte is 70 to 80 ℃, the current is direct current, and the current density is 5.0 to 10.0A/dm 2 The electroetching time is 15 to 30min.
The invention is further configured to: in the step S4, the spraying pressure is 3.7 to 5.5Kg/cm 2 The length of the etching area is 2.0 to 3.0m, the etching speed is 6.5 to 8.0m/min, and etching is carried out for 3 to 5 times.
The invention is further configured to: the etching solution used for the horizontal etching line is FeCl with the concentration of 100 to 300 g/L 3 100 to 200 ml/L of HCl and 4 to 6 g/L of boric acid.
In conclusion, the invention has the following beneficial effects:
the invention mainly provides an etching process of a thick aluminum ceramic lining plate, which comprises a high-precision pattern preparation method of the thick aluminum ceramic lining plate and a structure thereof, and the key points of the technical scheme are as follows: the method comprises the following steps that firstly, an acid-resistant mask is arranged on the surface of a thick aluminum ceramic lining plate; secondly, arranging a film with a corresponding pattern on an acid-resistant mask, exposing and developing the acid-resistant mask, removing the acid-resistant mask in the area needing etching, and etching and protecting the area not needing etching by using the acid-resistant mask; thirdly, performing electro-etching pretreatment on an area to be etched in an electro-etching mode, removing a thick aluminum layer with the thickness of 85 to 90% to obtain an etching channel, wherein the angle of the graph edge of the etching channel, which is perpendicular to the ceramic surface, is 70 to 90 degrees, and a vertical structure area of the graph of the aluminum layer is obtained; fourthly, performing spray etching on the residual aluminum layer at the pattern etching area by using wet etching of a horizontal etching line, limiting process parameters, having the etching characteristics of high speed and high pressure, effectively removing the residual aluminum layer of the pattern, obtaining an arc area structure of the aluminum layer pattern, and finally obtaining the pattern of the thick aluminum ceramic lining plate, wherein the aluminum layer structure is the thick aluminum layer with the thickness dimension of a vertical area of 75-85%, the verticality of the edge of the pattern is 70-90 degrees, the size of the arc area is 15-25%, the thickness of a protruded step is 30-60 mu m, and the thickness of the thick aluminum layer is 0.6-1.6 mm; and fifthly, removing the surface acid-resistant mask to obtain the thick aluminum ceramic lining plate with the pattern, and finishing the pattern preparation of the high-precision thick aluminum ceramic lining plate.
The thick aluminum ceramic lining plate is pretreated by utilizing an electroetching mode, the electroetching pretreatment mode provided by the invention can ensure the verticality of the edge of a graph, reduce edge sawteeth, effectively reduce the thickness of aluminum under the condition of no obvious side etching, remove a surface oxide film and reduce the pressure of subsequent wet etching.
According to the thick aluminum etching process provided by the invention, the limiting process of the step S4 is adopted, a small step can be left at the bottom of the aluminum layer pattern, the effective combination area of the aluminum layer and the ceramic is increased under the condition of not influencing the etching precision, and the reliability of the thick aluminum ceramic lining plate is improved.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a schematic structural view of an aluminum layer pattern of the thick aluminum ceramic lining plate of the present invention;
FIG. 3 is a schematic view of the 3D profile at line spacing after completion of the etching in example 1.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
The first embodiment is as follows:
the invention specifically provides a pattern layer structure of a thick aluminum ceramic lining plate, which mainly comprises a thick aluminum layer on a pattern surface and a ceramic layer in the middle, wherein a thick aluminum layer without the pattern surface is usually arranged on the other surface of the ceramic layer;
further, the thickness of the thick aluminum layer on the patterned surface and the thickness of the thick aluminum layer on the non-patterned surface are both 1.0mm, the spacing size is 1.0mm, and the precision is +/-0.1 mm;
the thick aluminum layer pattern structure comprises an etching channel formed after the pattern area is etched, an arc area and a protruding step area, as shown in fig. 2, wherein the part of the pattern interval is the etching channel, the side wall of the etching channel forms an Al layer vertical area, and the arc area is the Al layer arc area in the figure;
wherein the thickness of the etching channel is 84.5% of the thickness of the thick aluminum layer, the thickness is 0.85mm, and the verticality of the edge of the graph is 87 degrees; the size of the arc-shaped area is 15.5 percent of the thickness of the aluminum layer, the thickness is 0.15mm, and the size of the extending step is 38 mu m;
the thickness of the ceramic layer in the middle is 0.635mm, and the ceramic material is aluminum nitride;
the invention relates to a preparation method of a graphic layer structure of a thick aluminum ceramic lining plate, which mainly comprises the following steps as shown in figure 1:
s1: cleaning the surface;
sequentially carrying out alkali washing, acid washing, water washing and drying on the aluminum-coated ceramic lining plate to remove oil stains and other impurities on the surface for later use;
s2: transferring the graph;
presetting a pattern A, wherein A is an equidistant line pattern with the interval of 0.8mm, taking the aluminum-coated ceramic lining plate in the step S1, arranging an acid-resistant mask on the surface of the aluminum-coated ceramic lining plate, exposing the preset pattern A on the aluminum-coated ceramic lining plate, and developing the aluminum-coated ceramic lining plate to obtain the aluminum-coated ceramic lining plate with the acid-resistant mask of the pattern A on the surface;
s3: performing electroetching pretreatment;
taking the aluminum-coated ceramic lining plate with the surface provided with the graph A acid-resistant mask prepared in the step S2 as an anode, taking a copper plate as a cathode, placing the copper plate on two sides of the anode, placing the cathode and anode plates in parallel, wherein the distance between the cathode and anode plates is 15mm, placing the anode and cathode plates in an electrolytic bath, applying direct current between the cathode and anode plates for electroetching, wherein the electroetching depth is 90% of the thickness of an aluminum layer, and the thicknesses of aluminum layers on two sides of the aluminum-coated ceramic lining plate are both 1.0mm;
s4: chemical etching;
taking the thick aluminum ceramic lining plate after the electro-etching treatment in the step S3, and utilizing a horizontal etching line to sequentially carry out spraying and water washing to finish etching, wherein the spraying pressure is 3.8Kg/cm 2 Etching the ceramic substrate 3 times at an etching speed of 6.8m/min and an etching area length of 2.8m to complete the precise pattern etching, as shown in FIG. 3;
s5: removing the film and cleaning;
and (5) taking the etched aluminum-coated ceramic lining plate in the step (S4), removing the acid-resistant mask on the surface of the aluminum-coated ceramic lining plate by using alkali washing, and obtaining the aluminum-coated ceramic lining plate with the graph A after acid washing, water washing and drying.
In a further optimized scheme, the alkaline solution in the step 1 is a 5% NaOH solution, the reaction temperature is room temperature, and the reaction time is 60s.
In a further optimized scheme, the pickling solution in the step 1 is HNO with the concentration of 15% 3 The reaction temperature of the solution was room temperature, and the reaction time was 40 seconds.
In a further optimized scheme, in step S3, the point electric etching solution contains 120 g/L of NaCl,5 ml/L of HCl and 5 ml/L of H 3 PO 4 。
According to a further optimized scheme, in the step S3, the electroetching parameters are that the temperature of the electrolyte is 80 ℃, the current is direct current, and the current density is 7.6A/dm 2 And the time of the electroetching is 25 min.
The further optimized proposal, step S4, the etching solution for horizontal etching is prepared from 200 g/L FeCl 3 100 ml/L of HCl and 4.0g/L of boric acid.
The second embodiment: the invention specifically provides a pattern layer structure of a thick aluminum ceramic lining plate, which comprises a thick aluminum layer on a pattern surface, a ceramic layer in the middle and a thick aluminum layer on a non-pattern surface;
further, a thick aluminum layer on a pattern surface and a thick aluminum layer on a non-pattern surface are both 1.2mm in thickness, 1.0mm in spacing size and +/-0.1 mm in precision;
the thick aluminum layer pattern structure comprises an etching channel formed after the pattern area is etched, an arc area and a protruding step area;
wherein the thickness dimension of the etching channel is 85.0% of the thickness of the thick aluminum layer, the thickness is 1.02mm, and the verticality of the edge of the graph is 85 degrees; the size of the arc-shaped area is 15% of the thickness of the thick aluminum layer, the thickness is 0.18mm, and the size of the extending step is 30 mu m;
the ceramic layer in the middle is 0.635mm thick and is aluminum nitride;
the invention relates to a preparation method of a pattern layer structure of a thick aluminum ceramic lining plate, which mainly comprises the following steps:
s1: cleaning the surface;
sequentially carrying out alkali washing, acid washing, water washing and drying on the aluminum-coated ceramic lining plate to remove oil stains and other impurities on the surface for later use;
s2: transferring the graph;
presetting a pattern A, wherein A is an equidistant line pattern with the interval of 0.8mm, taking the aluminum-coated ceramic lining plate in the step S1, arranging an acid-resistant mask on the surface of the aluminum-coated ceramic lining plate, exposing the preset pattern A on the aluminum-coated ceramic lining plate, and developing the aluminum-coated ceramic lining plate to obtain the aluminum-coated ceramic lining plate with the acid-resistant mask of the pattern A on the surface;
s3: performing electroetching pretreatment;
taking the aluminum-coated ceramic lining plate with the pattern A acid-resistant mask arranged on the surface prepared in the step S2 as an anode, taking a copper plate as a cathode, placing the copper plate on two sides of the anode, placing the cathode and the anode plates in parallel, wherein the spacing distance is 15mm, placing the cathode and the anode plates in an electrolyte tank, applying direct current between the cathode and the anode plates for electroetching, wherein the electroetching depth is 90% of the thickness of an aluminum layer, and the thicknesses of aluminum layers on two sides of the aluminum-coated ceramic lining plate are both 1.0mm;
s4: chemical etching;
taking the thick aluminum ceramic lining plate after the electro-etching treatment in the step S3, and utilizing a horizontal etching line to sequentially carry out spraying and water washing to finish etching, wherein the spraying pressure is 4.0Kg/cm 2 Long etching areaEtching for 5 times at a etching speed of 7.0m/min to the ceramic substrate to complete the precise pattern etching, wherein the etching speed is 2.8 m;
s5: film removing and cleaning:
and (5) taking the etched aluminum-coated ceramic lining plate in the step (S4), removing the acid-resistant mask on the surface of the aluminum-coated ceramic lining plate by using alkali washing, and obtaining the aluminum-coated ceramic lining plate with the graph A after acid washing, water washing and drying.
In a further optimized scheme, the alkaline solution in the step 1 is a 5% NaOH solution, the reaction temperature is room temperature, and the reaction time is 60s.
In a further optimized scheme, the pickling solution in the step 1 is HNO with the concentration of 15% 3 The reaction temperature of the solution was room temperature, and the reaction time was 40 seconds.
In a further optimized scheme, in step S3, the point electric etching solution contains 120 g/L of NaCl,5 ml/L of HCl and 5 ml/L of H 3 PO 4 。
According to a further optimized scheme, in the step S3, the electroetching parameters are that the temperature of the electrolyte is 80 ℃, the current is direct current, and the current density is 7.4A/dm 2 And the time of the electroetching is 30min.
In a further optimized scheme, in step S4, the etching solution for horizontal etching is composed of 200 g/L FeCl3, 100 ml/L HCl and 4.0g/L boric acid.
Comparative example
Compared with the embodiment 1, the comparison example has the same preset pattern, only the electrolytic etching is cancelled, the rest parameter steps are the same, and the chemical etching is directly carried out to obtain a sample.
Comparison of sample pattern inspection
The method provided by the invention is adopted to prepare the pattern of the thick aluminum ceramic lining plate, and the obtained pattern has higher precision.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (13)
1. A graphic layer structure of a thick aluminum ceramic lining plate is characterized in that: at least comprises a ceramic layer and a thick aluminum layer; the thick aluminum layer is provided with a pattern area and an arc area located below the pattern area, the arc area is in direct contact with the ceramic layer, an etching channel is formed in the pattern area, and an included angle formed by the side wall of the etching channel and the ceramic layer is 70-90 degrees; the arc-shaped area is provided with a step at the part of the etching channel.
2. The patterned layer structure of a thick aluminum ceramic liner plate of claim 1, wherein: the thickness of the thick aluminum layer is 0.6-1.6 mm, the minimum distance between the pattern areas is 0.4mm, and the precision is +/-0.1 mm.
3. The patterned layer structure of a thick aluminum ceramic liner as claimed in claim 2, wherein: the thickness dimension of the etching channel is 75% -85% of the thickness of the thick aluminum layer, the dimension of the arc-shaped area is 15% -25% of the thickness of the thick aluminum layer, and the dimension of the extending step is 25-40 mu m.
4. The patterned layer structure of a thick aluminum ceramic liner plate of claim 1, wherein: the thickness of the ceramic layer is 0.32 to 1.00mm.
5. The patterned layer structure of a thick aluminum ceramic liner plate as claimed in claim 4, wherein: the ceramic layer is made of one of aluminum nitride, aluminum oxide and silicon nitride.
6. A method for preparing the thick aluminum ceramic lining plate according to any one of claims 1 to 5, which is characterized by comprising the following steps:
s1: surface cleaning:
cleaning the aluminum-coated ceramic lining plate to remove oil stains and other impurities on the surface for later use;
s2: pattern transfer:
presetting a pattern A, arranging an acid-resistant mask on the surface of the aluminum-coated ceramic lining plate obtained in the step S1, exposing the aluminum-coated ceramic lining plate with the preset pattern A, and developing the copper-coated ceramic lining plate to obtain the aluminum-coated ceramic lining plate with the acid-resistant mask of the pattern A on the surface;
s3: electric etching pretreatment:
taking the aluminum-coated ceramic lining plate with the surface provided with the acid-resistant mask of the graph A prepared in the step S2 as an anode, taking a copper plate as a cathode, placing the aluminum-coated ceramic lining plate in an electrolytic bath, and applying direct current between the cathode and the anode plates for electroetching, wherein the electroetching depth is 85-90% of the thickness of the thick aluminum layer;
s4: chemical etching:
taking the thick aluminum ceramic lining plate after the electro-etching treatment in the step S3, sequentially spraying and washing by using a horizontal etching line to finish etching, and etching to a ceramic substrate to finish precise pattern etching;
s5: removing the film and cleaning:
and (5) taking the etched aluminum-coated ceramic lining plate in the step (S4), removing the acid-resistant mask on the surface of the aluminum-coated ceramic lining plate by using alkali washing, and obtaining the aluminum-coated ceramic lining plate with the pattern A after acid washing, water washing and drying.
7. The method of claim 6, wherein: in the step S1, the cleaning includes alkali washing, acid washing, water washing, and drying in this order.
8. The method of claim 7, wherein: in the step S1, the alkaline washing solution is NaOH solution with the concentration of 3-5%, the reaction temperature is room temperature, and the reaction time is 30-60s; the pickling solution for pickling is HNO with the concentration of 10 to 20 percent 3 The solution is reacted at room temperature for 30 to 60s.
9. The method of claim 6, wherein: and in the step S3, copper plates are used as cathodes and are arranged on two sides of the anode, and the cathode plate and the anode plate are arranged in parallel, wherein the distance between the copper plates and the anode plate is 15-25mm.
10. The method according to claim 6 or 9, characterized in that: the etching solution for electroetching contains 50-150 g/L NaCl, 5-10 ml/L HCl and 5-10 ml/L H 3 PO 4 。
11. The method of claim 10, wherein: the electroetching parameters are that the temperature of the electrolyte is 70 to 80 ℃, the current is direct current, and the current density is 5.0 to 10.0A/dm 2 The electroetching time is 15 to 30min.
12. The method of claim 6, wherein: in the step S4, the spraying pressure is 3.7 to 5.5Kg/cm 2 Etching is carried out for 3 to 5 times, wherein the length of an etching area is 2.0 to 3.0m, and the etching speed is 6.5 to 8.0 m/min.
13. The method according to claim 6 or 12, characterized in that: the etching solution used for the horizontal etching line is FeCl with the concentration of 100-300 g/L 3 100 to 200 ml/L of HCl and 4 to 6 g/L of boric acid.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102691063A (en) * | 2012-06-13 | 2012-09-26 | 南京大学 | Inorganic salt etching solution used for electrochemically etching highly fine lines |
| CN108668452A (en) * | 2018-06-12 | 2018-10-16 | 江苏博敏电子有限公司 | A kind of PCB fine-lines electrolytic etching recycles correlation technology with copper |
| CN112166654A (en) * | 2018-05-16 | 2021-01-01 | 株式会社东芝 | Ceramic copper circuit board and method for manufacturing the same |
| CN113692134A (en) * | 2021-08-27 | 2021-11-23 | 江门市华锐铝基板股份公司 | Etching method for thick copper wire spacing |
| CN115335985A (en) * | 2020-03-23 | 2022-11-11 | 住友电木株式会社 | Circuit board |
-
2023
- 2023-02-15 CN CN202310113310.3A patent/CN115985882A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102691063A (en) * | 2012-06-13 | 2012-09-26 | 南京大学 | Inorganic salt etching solution used for electrochemically etching highly fine lines |
| CN112166654A (en) * | 2018-05-16 | 2021-01-01 | 株式会社东芝 | Ceramic copper circuit board and method for manufacturing the same |
| CN108668452A (en) * | 2018-06-12 | 2018-10-16 | 江苏博敏电子有限公司 | A kind of PCB fine-lines electrolytic etching recycles correlation technology with copper |
| CN115335985A (en) * | 2020-03-23 | 2022-11-11 | 住友电木株式会社 | Circuit board |
| CN113692134A (en) * | 2021-08-27 | 2021-11-23 | 江门市华锐铝基板股份公司 | Etching method for thick copper wire spacing |
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Application publication date: 20230418 |