CN107249257A - The IC support plate preparation methods of novel environment friendly - Google Patents
The IC support plate preparation methods of novel environment friendly Download PDFInfo
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- CN107249257A CN107249257A CN201710638255.4A CN201710638255A CN107249257A CN 107249257 A CN107249257 A CN 107249257A CN 201710638255 A CN201710638255 A CN 201710638255A CN 107249257 A CN107249257 A CN 107249257A
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- Prior art keywords
- copper
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- ion implanting
- support plate
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/07—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses the IC support plate preparation methods of novel environment friendly, ion implanting surface metalation is carried out on its surface after being cleaned to substrate, layers of copper is plated to obtain in injection layer surface with electroless copper and copper plating technology by two methods progress；One layer of positive/negative property photoresist is coated in layers of copper, mask is recycled and obtains circuitous pattern through the processing such as overexposure, development；Finally the elements such as chip are mounted on support plate and encapsulated, then whole IC support plates are inlayed on circuit boards.Electroplating process and electrolytic process are constituted a circulation in the method that the present invention is provided, or only circuitous pattern part is injected and electroplated, therefore greatly reduces the pollution to environment and improves the utilization rate of metallic copper.High-accuracy, small size, the design of ultra-thin IC support plates not only optimize circuitous pattern and further increase circuit board overall performance simultaneously, also due to the flat smooth of ceramic substrate, so as to solve the problem of elements such as chip, resistance and electric capacity are high to substrate planarization requirement well.
Description
Technical field
The present invention relates to a kind of preparing technical field of IC support plates.
Background technology
Printed circuit board (also known as PCB) nearly all occurs among electronic equipment, size, function, complexity are all each
Differ.What the development especially electric terminal industry development such as 3G smart mobile phones, tablet personal computer in recent years of electronic industry was brought
Industrial Revolution is constantly heated up so that the electronic product is continuously increased to PCB demand.The PCB manufacturers of China are constantly adding
Big input and expansion paces, but be also short of for high side circuitry plate field, random layer HDI, Rigid Flex, IC support plates are
Developing is most fast, and printed board kind the most high-end in communication, the newest sci-tech product of electronics is applied at present.
In recent years, the electronics industry of China is developed rapidly, and the yield of printed circuit board (PCB) also increasingly increases, and causes
The generation and discharge of substantial amounts of circuit board corrosion waste liquid.According to the literature, 100,000 square metres of printed circuit board factory, year are produced year
About 600,000 tons of water consumption, its at least 480,000 tons of sewage produced.Wherein, in the waste liquid of etched circuit board containing substantial amounts of copper from
Son, it is impossible to recycled well, cause the loss of a large amount of copper to waste, and the copper resource reserves of China are few at present, it is large-scale
Copper mine is few, but due to the fast development of Copper Processing Industry, but very big for the demand to copper, the copper yield of itself can not expire already
Needed for foot, so as to need from external a large amount of imports such as Peru, Chile.
And the copper of electrolysis processing forever in the method proposed in the present invention, the first preparation process, and electrolytic process and plating
Process composition circulation, electrolyte reusable edible.Second process is only electroplated to circuitous pattern region, is directly eliminated etched
Journey.Both of which considerably reduces environmental pollution and has effectively saved copper metal resource.
The content of the invention
The present invention is in circuit board preparation process, and the designs of IC support plates allows whole circuit board miniaturization, densification, function
Also it is more powerful, the current domestic deficiency in high-end printed board field is made up, was electrolysed while being used in the first preparation process
Journey replaces traditional etching process, and electrolysis step and electro-coppering step are constituted into a circulation.Second of preparation process is used
Directly in the copper coating of circuitous pattern region, etching process is eliminated.At present by circuit-board industry develops institute's band rapidly
In the environmental pollution come and shortage of resources problem, the purpose for reducing environmental pollution and saving copper resource is reached.
In consideration of it, the invention provides a kind of IC support plate preparation methods of novel environment friendly, wherein again different including two kinds
Preparation process：
The first preparation process comprises the following steps：S110, makes the PCB of standard, IC support plates are using ceramics as base
Bottom；S120, ion implanting is carried out after being cleaned to substrate on its surface, after the completion of, successively existed with electroless copper and copper plating technology
Injection layer surface plates to obtain layers of copper；S130, coats one layer of positive photoresist in layers of copper, recycles mask and through overexposure, aobvious
The processing such as shadow obtains circuitous pattern；S140, then handles the copper on model in addition to circuitous pattern with electrolysis, finally will processing
Good IC support plates are embedded in PCB.
Second of preparation process comprises the following steps：S110, makes the PCB of standard, IC support plates are using ceramics as base
Bottom；S120, coats one layer of negative photoresist in substrate, recycles mask and is obtaining electricity through the processing such as overexposure, development
Road figure；S130, carries out ion implanting in its surface after model is cleaned；S140, after injection, successively with electroless copper and electricity
Plating copper technology plates to obtain layers of copper in injection layer surface, and finally the IC support plates handled well are embedded in PCB.
Preferably, according to the method described in claim 1, it is characterised in that ultrasound is carried out to specimen surface in acetone
Ripple is cleaned.
It is further preferred that according to the method described in claim 1, it is characterised in that IC support plates using ceramics as substrate,
Its surface carries out ion implanting using metal vacuum steam plasma source (MEVVA) ion implantation device.
Preferably, according to the method described in claim 1, it is characterised in that the injection member of the ion implanting
Element is metallic element Ni, Cu, Fe, Au, Ti or Ag.
Preferably, according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source
(MEVVA) ion implantation device carries out ion implanting on ceramic bases surface, and its injecting voltage is 0~50kV, and beam intensity is 0
~10mA, implantation dosage is 1 × 1015~1 × 1017/cm2。
Preferably, according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source
(MEVVA) ion implantation device carries out ion implanting on ceramic bases surface, and injection depth is 0~300nm.
Preferably, the IC support plate preparation methods of a kind of novel environment friendly, it is characterised in that：Utilize metal vacuum steam plasma source
Surface metalation processing is carried out to system in package ceramic bases；
It is further preferred that a kind of IC support plate preparation methods of novel environment friendly, it is characterised in that first obtain circuitous pattern again
Progress ion implanting processing thickeies processing again or first ion implanting processing thickeies to handle again and obtains figure again.
Preferably, method according to claim 2, it is characterised in that to substrate clean after carried out on its surface from
Son injection, after the completion of, successively plate to obtain layers of copper in injection layer surface with electroless copper and copper plating technology；One layer is coated in layers of copper
Positive photoresist, recycles mask and obtains circuitous pattern through the processing such as overexposure, development；Then model is handled with electrolysis
On copper in addition to circuitous pattern, finally the IC support plates handled well are embedded in PCB.
Preferably, a kind of method according to claim 2, it is characterised in that the IC support plates preparation side of novel environment friendly
Method, it is characterised in that：One layer of negative photoresist is coated in substrate, mask is recycled and exists through the processing such as overexposure, development
Obtain circuitous pattern；Ion implanting is carried out after model is cleaned in its surface；After injection, successively with electroless copper and electro-coppering
Technology plates to obtain layers of copper in injection layer surface, and finally the IC support plates handled well are embedded in PCB.
Preferably, according to the method described in claim 1, it is characterised in that the injection element of the ion implanting is gold
Belong to element Ni, Cu, Fe, Au, Ti or Ag.
Preferably, according to the methods described of claims 1, it is characterised in that the equipment of ion implanting processing is continuous wide beam
Processing equipment, handles a diameter of 300~900mm, and line is 10~50mA, and disposal ability is 2m/min.
Preferably, according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source
(MEVVA) ion implantation device carries out ion implanting on ceramic bases surface, and its injecting voltage is 0~50kV, and implantation dosage is 1
×1015~1 × 1017/cm2。
Preferably, according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source
(MEVVA) ion implantation device carries out ion implanting on ceramic bases surface, and injection depth is 0~300nm.
Preferably, method according to claim 2, it is characterised in that the thickness for the layers of copper that electro-coppering is electroplated is
10~20um.
Preferably, method according to claim 3, it is characterised in that during electrolysis processing and electroplating processes group
Into a circulation, using copper clad plate as anode, using the model after injecting and electroless copper is handled as negative electrode.
Relative to prior art, the embodiment of the present invention has the advantage that：
1st, use metal vacuum steam plasma source proposed by the present invention (MEVVA) ion implantation device is on ceramic bases surface
Ion implanting is carried out to change base material electric property, ion concentration that MEVVA ion implantings are injected on ceramic bases surface,
Depth profile is accurately controlled, and the optional scope of injected with metallic elements is wide.
2nd, the copper on copper clad plate in addition to circuitous pattern is electrolysed using electrolysis in the first preparation process proposed by the present invention,
Wherein electrolyte can be recycled, the etching process traditional compared to that can produce a large amount of pollution etching waste liquids, be significantly reduced
Pollution to environment.
3rd, electrolytic process and electro-coppering process are constituted a circulation in the first preparation process proposed by the present invention, in electricity
These copper are used for electro-coppering process again while solving the copper on copper clad plate in addition to circuitous pattern, so as to substantially increase metallic copper
Utilization rate.
4th, in second of preparation process proposed by the present invention in copper facing, due to only carrying out copper facing to circuitous pattern part,
Therefore do not need etching process to etch unnecessary copper, thus will not produce to pollution environment and reluctant etching waste liquid, subtract
The pollution to environment is lacked.
5th, in second of preparation process proposed by the present invention in copper facing, due to only carrying out copper facing to circuitous pattern part,
Needed compared to conventional art for whole plate face carries out copper facing, largely saved copper metal resource.
6th, the IC support plate small volumes where the element such as chip made in the present invention, flaggy is thin, with higher precision, carries
The high overall performance of circuit board.
7th, the IC support plates where the elements such as the chip of making are embedded in the PCB of matching in the present invention, tradition
PCB substrate be shaggy epoxy resin etc., and the element such as chip requires higher, of the invention load to planarization
Plate substrate is the smooth ceramics in surface, therefore is optimized in terms of planarization.
8th, using ceramics as substrate in the present invention, the cost of material is low, and with good thermal conductivity and air-tightness, while this
The ceramic material of aluminum oxide in invention also has the thermal coefficient of expansion matched with semiconductor silicon, high thermal stability, chemistry steady
Qualitative and low-k.
Brief description of the drawings
The accompanying drawing for constituting a part of the embodiment of the present invention is used for providing further understanding the embodiment of the present invention, the present invention
Accompanying drawing and its illustrate be used for explain the present invention, do not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is a kind of schematic flow sheet of the IC support plate preparation methods of novel environment friendly provided in an embodiment of the present invention；
Fig. 2 is a kind of circuit board surface schematic diagram provided in an embodiment of the present invention；
Fig. 3 is board structure of circuit composition schematic diagram provided in an embodiment of the present invention；
Fig. 4 is the structural representation of MEVVA injected systems provided in an embodiment of the present invention；
Electrolytic process and the structural representation of electro-coppering process that Fig. 5 provides for the first preparation process embodiment in the present invention
Figure；
Description of reference numerals
100 PCBs
110 IC support plates
The elements such as 120 chips
200 ceramic bases
210 injection --- diffusion layers
220 layers of copper
300 MEVVA ion guns
310 beam spots
320 piece mouths
330 dress sample positions
340 transmission crawler belts
350 drive shafts
360 pumped vacuum systems
370 ion source cathodes
400 power supplys
410 electrolytic cells
420 anodes
430 electrolyte
440 negative electrodes
Specific implementation step
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, feature in the embodiment of the present invention and embodiment can mutual group
Close.
Below in conjunction with the accompanying drawings, each preferred embodiment of the present invention is described further：
Embodiment of the method
In the last few years, electronics industry was developed rapidly and spread to already in daily life, and almost all of electricity
Sub- product has circuit board component, and the pollution waste liquid and the consumption problem of metallic copper that it brings are also increasingly severe, and the present invention is carried
Two kinds of preparation process can greatly reduce environmental pollution in the method gone out, while can effectively improve the utilization rate of metallic copper again
So as to saving copper metals resources.
The first preparation process, Fig. 1 provides a kind of stream of the IC support plate preparation methods of novel environment friendly for the embodiment of the present invention
Journey schematic diagram, its idiographic flow is as shown in Figure 1：
S110, makes the PCB of standard, IC support plates are using ceramics as substrate；
In this step, the PCB of one piece of standard is first made, ceramics are chosen as the substrate of IC support plates.
S120, ion implanting is carried out after being cleaned to substrate on its surface, after the completion of, successively with electroless copper and electro-coppering skill
Art plates to obtain layers of copper in injection layer surface；
In this step, surface clean is carried out to the ceramic bases of IC support plates, in order to remove substrate surface dust,
Bulky grain and other impurities, optionally, carrying out ultrasonic wave cleaning in acetone equal solvent, uses metal vacuum steam after cleaning
Ion gun (MEVVA) ion implantation device injects to its surface, and device structure is as shown in figure 4, the note that injection is formed in Fig. 3
Enter --- diffusion layer, wherein optionally, the element of injection can be all metallic elements, preferably Ni, Fe, Au, Ti,
Selected injection element is Ni in Cu or Ag, the present invention, and its injecting voltage is 0~50kV, and beam intensity is 0~10mA, injection
Dosage is 1 × 1015~1 × 1017/cm2, injection depth is 0~300nm.Model after the completion of injection is first tentatively cleaned
To go to degrease and other impurity, optionally, being cleaned in absolute ethyl alcohol or acetone to its ultrasonic wave, then model is put into
PtCl4In solution, due to the power of activity, the Ni of injection can be by Pt4+Ion exchange comes out to form Pt simple substance, and Pt simple substance is to ceramics
There is catalytic activation on surface, is conducive to the further progress of electroless copper, then model is put into the plating solution of chemical plating
Plate last layer thin copper layer.Then one layer of layers of copper, the copper shown in Fig. 3 of formation are electroplated with copper plating technology on this layer of thin copper layer
Layer, wherein optionally, copper electroplating layer thickness is 10~20um.In this step, electro-coppering process and last step
In electrolytic process be in fact one circulation, i.e., progress electrolytic process when also carry out electro-coppering process.
S130, coats one layer of positive photoresist in layers of copper, recycles mask and is obtained through the processing such as overexposure, development
Circuitous pattern；
In this step, first the model after copper facing is coated with positive photoresist, optionally, after the completion of to above-mentioned coating
Ceramic model carries out the photobehavior that front baking (soft baking) processing removes most of solvent and stable photoresist in photoresist, afterwards
Mask with circuitous pattern as shown in Figure 2 is covered on a photoresist, then by model exposure-processed, model after exposure
It is put into developer solution and develops, is exactly the photoresist by exposure area in developer solution for the positive photoresist in the present embodiment
Dissolve, i.e., have circuitous pattern of the part of photoresist for transfer after exposure imaging, the model after above-mentioned processing is carried out again
Drying (hard baking, post bake) processing afterwards hardens remaining glued membrane.
S140, then handles the copper on model in addition to circuitous pattern with electrolysis, finally inlays the IC support plates handled well
It is embedded in PCB.
Not in step, as shown in figure 5, as described in during S120, electrolytic process constitutes a circulation with electro-coppering process,
The main component of electrolyte is copper sulphate and sulfuric acid, and other also have the use such as activator and additive of Cl- ions etc
With assisted electrolysis with plating, to complete the copper clad plate after above-mentioned steps as anode, needed using during S120 plating model as
Negative electrode, the copper in addition to circuitous pattern is fallen in electrolysis on anode, while the plating these copper being used on negative electrode again.Finally, remove
Remaining photoresist in plate face.The elements such as chip, resistance, electric capacity are mounted in again on the IC support plates handled well, and IC support plates are inlayed
It is embedded in the PCB substrate made during S110, as shown in Figure 2.
Second of preparation process, Fig. 1 provides a kind of stream of the IC support plate preparation methods of novel environment friendly for the embodiment of the present invention
Journey schematic diagram, its idiographic flow is as shown in Figure 1：
S110, makes the PCB of standard, IC support plates are using ceramics as substrate；
In this step, the PCB of one piece of standard is first made, insulation is chosen and heat resistance preferably ceramics is used as IC
The substrate of support plate.
S120, coats one layer of negative photoresist in substrate, recycles mask and is being obtained through the processing such as overexposure, development
To circuitous pattern；
In this step, first ceramic bases are dehydrated and toasted, main purpose is that removal ceramic bases surface can adsorbable water
Point, then tackified finish is carried out to increase the adhesiveness of plate face and photoresist to ceramic bases, coat one in ceramic surface after processing
Layer negative photoresist.Ceramic model after the completion of above-mentioned coating is carried out most of molten in front baking (soft baking) processing removing photoresist
Agent and the photobehavior of stable photoresist, afterwards the mask covering for having circuitous pattern on a photoresist, then by model
Exposure-processed, is put into model in developer solution after exposure and develops, for the negative photoresist in this preparation process, will exactly not expose
The photoresist in light region is dissolved in developer solution, i.e., do not have circuitous pattern of the part of photoresist for transfer after exposure imaging,
Model after above-mentioned processing dries (hard baking, post bake) processing after carrying out again harden remaining glued membrane.
S130, carries out ion implanting in its surface after model is cleaned；
In this step, above-mentioned model is first subjected to surface clean, alternatively, ultrasonic wave is carried out in acetone equal solvent clear
Wash, in order to remove dust, bulky grain of substrate surface and other impurities, with structure metal as shown in Figure 4 after cleaning
Vacuum and steam ion gun (MEVVA) ion implantation device carries out ion implanting to its surface, wherein optionally, wherein alternatively
It is that the element of injection can be selected note in all metallic elements, preferably Ni, Fe, Au, Ti, Cu or Ag, the present invention
Enter element for Ni, injecting voltage is 0~50kV, beam intensity is 0~10mA, and implantation dosage is 1 × 1015~1 × 1017/cm2,
Injection depth is 0~300nm, and injection process is exactly that the part for having circuitous pattern on model is filled with W metal in fact, is formed
Injection in Fig. 3 --- diffusion layer.
S140, after injection, successively plates to obtain layers of copper with electroless copper and copper plating technology in injection layer surface, finally will processing
Good IC support plates are embedded in PCB.
In this step, the model after the completion of injection is first carried out to preliminary cleaning to go to degrease and other impurity, alternatively
It is its ultrasonic wave to be cleaned in absolute ethyl alcohol or acetone, then model is put into PtCl4It is strong due to metal activity in solution
Weak, the Ni of injection can be by Pt4+Ion exchange comes out to form Pt simple substance, and Pt simple substance plays the role of catalytic activation to ceramic surface, had
Beneficial to the further progress of electroless copper, model is then put into plating last layer thin copper layer in the plating solution of chemical plating.Then thin
Electroplated in layers of copper with copper plating technology, that is, the layers of copper formed in Fig. 3, wherein optionally, copper electroplating layer thickness be 10~
20um.Plate and removed remaining photoresist after layers of copper, the IC support plates that will be equipped with the elements such as chip are embedded in PCB,
As shown in Figure 2.
Claims (10)
1. a kind of IC support plate preparation methods of novel environment friendly, it is characterised in that：Using metal vacuum steam plasma source to system-level
Packaging ceramic substrate carries out surface metalation processing.
2. the IC support plate preparation methods of a kind of novel environment friendly, it is characterised in that first obtain circuitous pattern and carry out again at ion implanting
Reason thickeies processing again or first ion implanting processing thickeies processing and obtains figure again again.
3. method according to claim 2, it is characterised in that carry out ion implanting on its surface after being cleaned to substrate, complete
Cheng Hou, successively plates to obtain layers of copper with electroless copper and copper plating technology in injection layer surface；One layer of positive-tone photo is coated in layers of copper
Glue, recycles mask and obtains circuitous pattern through the processing such as overexposure, development；Then handled with electrolysis and remove circuit on model
The IC support plates handled well, are finally embedded in PCB by the copper beyond figure.
4. method according to claim 2, it is characterised in that a kind of IC support plate preparation methods of novel environment friendly, its feature
It is：One layer of negative photoresist is coated in substrate, mask is recycled and is obtaining circuit diagram through the processing such as overexposure, development
Shape；Ion implanting is carried out after model is cleaned in its surface；After injection, successively with electroless copper and copper plating technology in injection
Layer surface plates to obtain layers of copper, and finally the IC support plates handled well are embedded in PCB.
5. according to the method described in claim 1, it is characterised in that the injection element of the ion implanting is metallic element Ni,
Cu, Fe, Au, Ti or Ag.
6. according to the methods described of claims 1, it is characterised in that the equipment of ion implanting processing is continuous wide beam processing equipment,
A diameter of 300~900mm is handled, line is 10~50mA, and disposal ability is 2m/min.
7. according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source (MEVVA) ion note
Enter equipment and ion implanting is carried out on ceramic bases surface, its injecting voltage is 0~50kV, and implantation dosage is 1 × 1015~1 ×
1017/cm2。
8. according to the method described in claim 1, it is characterised in that using metal vacuum steam plasma source (MEVVA) ion note
Enter equipment and ion implanting is carried out on ceramic bases surface, injection depth is 0~300nm.
9. method according to claim 2, it is characterised in that the thickness for the layers of copper that electro-coppering is electroplated is 10~20um.
10. method according to claim 3, it is characterised in that during electrolysis processing and electroplating processes constitute one and follow
Ring, using copper clad plate as anode, using the model after injecting and electroless copper is handled as negative electrode.
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Cited By (2)
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| CN110923624A (en) * | 2019-12-13 | 2020-03-27 | 北京师范大学 | Ion beam printing method based on ion beam printing system |
| CN114828430A (en) * | 2022-05-10 | 2022-07-29 | 深圳市鼎华芯泰科技有限公司 | Etching method of double-sided or multilayer printed circuit board |
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| CN103209546A (en) * | 2013-04-03 | 2013-07-17 | 遂宁市广天电子有限公司 | Method for making line in direct negative etching way |
| CN104213121A (en) * | 2014-08-15 | 2014-12-17 | 北京凯迪思电路板有限公司 | Method for synchronously performing acidic etching and copper recovery for circuit board |
| CN105899003A (en) * | 2015-11-06 | 2016-08-24 | 武汉光谷创元电子有限公司 | Single layer circuit board, multilayer circuit board and manufacture method for single layer circuit board and multilayer circuit board |
| CN106604560A (en) * | 2017-02-22 | 2017-04-26 | 武汉光谷创元电子有限公司 | Circuit board processing method |
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| CN110923624A (en) * | 2019-12-13 | 2020-03-27 | 北京师范大学 | Ion beam printing method based on ion beam printing system |
| CN110923624B (en) * | 2019-12-13 | 2020-11-24 | 北京师范大学 | Ion beam printing method based on ion beam printing system |
| CN114828430A (en) * | 2022-05-10 | 2022-07-29 | 深圳市鼎华芯泰科技有限公司 | Etching method of double-sided or multilayer printed circuit board |
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