CN115979448A - High-precision micro-nano temperature sensor for near space detection - Google Patents
High-precision micro-nano temperature sensor for near space detection Download PDFInfo
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- CN115979448A CN115979448A CN202211720337.0A CN202211720337A CN115979448A CN 115979448 A CN115979448 A CN 115979448A CN 202211720337 A CN202211720337 A CN 202211720337A CN 115979448 A CN115979448 A CN 115979448A
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Abstract
The invention relates to a high-precision micro-nano temperature sensor for detecting a near space, belonging to the technical field of temperature measurement. The invention adopts a microbridge structure, takes a platinum (Pt) resistor as a temperature measurement sensitive element, has the size of micro-nanometer, and coats an anti-radiation coating film on the outer surface of the sensor, and concretely comprises the following steps: the sensor comprises a sensing part, a first electrode, a second electrode, a power supply and a lead; the sensing part includes: the device comprises a substrate, an insulating layer, a thermistor and an anti-radiation silver film; the substrate plays a role in bearing and mounting the substrate outwards, the thermistor is attached to the insulating layer and attached to the substrate, the thermistor is a platinum film, temperature measurement is achieved, the radiation-proof aluminum film is plated on the outer layer, external interference is shielded, and the thermistor serves as an electrode and is connected with the electrode through a lead. The invention has the characteristics of small volume, good resistance linearity, small heat capacity and strong radiation protection capability, can achieve higher measurement precision and very small response time, and solves the problems of precision and response time of the temperature detection in the air.
Description
Technical Field
The invention relates to a high-precision micro-nano temperature sensor for detecting a near space, belonging to the technical field of temperature measurement.
Background
When temperature in-situ measurement is carried out in a near space, in-situ measurement is carried out by means of sensors carried on an empty base platform such as an approaching airship or a sounding rocket, and the temperature sensors are required to have the characteristics of miniaturization and integration so as to reduce the gravity load of the empty base platform; the air environment is complex, the solar radiation and cloud scattering are achieved, the temperature is low, the change is fast, the air pressure is low, the wind speed is large, and the conventional temperature sensor is difficult to accurately measure in the complex atmospheric environment.
Thermal errors of the temperature sensor can affect the accuracy and response time of the measurement: on one hand, the radiation light irradiates the temperature sensor, heats the whole temperature sensor and the fixed part to cause temperature rise, and the part contacted with the thermistor conducts heat to the thermistor to influence the temperature of the thermistor; on the other hand, because the atmosphere is thin and the air pressure is low, the heat exchange between the thermistor and the outside world is slow due to the heat obtained by heat conduction and self joule heat, and the accuracy and the quick response of the temperature sensor are also influenced.
At present, a bead thermistor temperature sensor commonly used for sounding has the defects of large volume, large heat capacity, large radiation, slow heat dissipation, low precision and no quick response.
Disclosure of Invention
The invention aims to provide a high-precision micro-nano temperature sensor for near space detection, which adopts a micro-bridge structure, takes a platinum (Pt) resistor as a temperature measurement sensitive element, has the size of micro-nano level, is coated with a radiation-proof coating film on the outer surface of the sensor, has the characteristics of small volume, good resistance linearity, small heat capacity and strong radiation-proof capability, can achieve higher measurement precision and very small response time, and solves the problems of precision and response time of near space detection temperature.
The purpose of the invention is realized by the following technical scheme:
the invention relates to a high-precision micro-nano temperature sensor for detecting a near space, which comprises: the sensor comprises a sensing part, a first electrode, a second electrode, a power supply and a lead;
the sensing part includes: the device comprises a substrate, an insulating layer, a thermistor and an anti-radiation silver film;
the insulating layer is attached to the upper surface of the substrate, and the thermistor is attached to the insulating layer;
the substrate is made of sapphire materials and is a cuboid, a through hole is formed in the middle of the substrate, the upper surface and the lower surface of the substrate are polished, and the lower surface of the substrate is used as a fixed mounting surface;
the through hole of the substrate is preferably a circular hole or a square hole;
after the insulating layer is etched on the substrate, a middle part of the suspended insulating layer is formed, the shape of the middle part is the same as that of the through hole of the substrate, the shape of the outer ring part is the same as that of the middle part, the middle part is connected with the outer ring part through four micro-bridges, and the size of the outer ring part is smaller than that of the through hole of the substrate;
preferably, the insulating layer is made of silicon dioxide material and is generated on the upper surface of the substrate by an inductively coupled plasma enhanced chemical vapor deposition method;
the thermistor is a platinum film, is directly exposed in the air and is preferably in a multi-bending snake shape or a spiral shape;
the resistance value of the thermistor is as shown in formula (1), and the resistance value of the thermistor is not less than 100 omega;
wherein U is voltage, R is resistance, I is current, rho is resistivity of the platinum film, k is temperature coefficient of resistance of the platinum film, T is temperature, L is length of the platinum film resistor, S is cross-sectional area of the platinum film resistor, and R is the length of the platinum film resistor 0 The resistance value of the platinum film is 0 ℃;
the heat dissipation model of the platinum film of the thermistor is as shown in formula (2), and the larger the surface of the platinum film is, the better the heat dissipation is;
Q＝a(t w -t 0 )F (2)
wherein Q is heat dissipation, a is heat transfer coefficient, and t is w Is the surface temperature, t, of the platinum film 0 The ambient temperature is shown, and F is the surface area of the platinum film;
depositing and forming a platinum film of the thermistor at the middle position of the upper surface of the insulating layer by a direct-current magnetron sputtering process;
the radiation-proof silver film is plated on the peripheral surface of the substrate and the upper surface of the outer ring part of the insulating layer;
the radiation-proof silver film on the upper surface of the insulating layer is divided into three parts which are not connected with each other, and the two parts are used as electrodes and are respectively connected with the two ends of the platinum film of the thermistor;
the power supply is connected with the electrode formed by the radiation-proof silver film through the lead to form a loop;
preferably, the power supply adopts a constant current source and adopts a four-wire connection method.
Has the advantages that:
1. the high-precision micro-nano temperature sensor for detecting the near space adopts a micro-bridge structure, reduces the heat conduction between a platinum film and a substrate, realizes large resistance under the condition of small volume, and improves the sensitivity and precision of temperature measurement.
2. According to the high-precision micro-nano temperature sensor for detecting the near space, disclosed by the invention, the platinum film is in a micro-nano size, and a good heat dissipation structure is adopted, so that the response time is reduced.
3. According to the high-precision micro-nano temperature sensor for near space detection, the radiation interference of the near-space environment is reduced by plating the radiation-proof aluminum film on the surface, and the radiation-proof aluminum film also serves as an electrode in a loop, so that the complexity of the structure is reduced.
Drawings
FIG. 1 is a schematic structural diagram of a high-precision micro-nano temperature sensor for near space detection according to the invention;
wherein, 1-power supply, 2-lead, 3-first electrode, 4-second electrode, 5-sensing component;
FIG. 2 is a schematic diagram of a three-dimensional structure of a high-precision micro-nano temperature sensor for detecting an adjacent space according to the invention;
6-substrate, 61-through hole, 9-side radiation protection silver film and 10-upper surface radiation protection silver film;
wherein, 7-insulating layer, 8-thermistor;
FIG. 3 is an insulating layer of a high-precision micro-nano temperature sensor for near space detection according to the present invention;
wherein 71-middle part, 72-microbridge, 73-outer ring part, 74-outer ring inner hole;
FIG. 4 is a schematic structural diagram of a platinum film of a high-precision micro-nano temperature sensor for detecting near space according to the invention;
FIG. 5 is a schematic structural diagram of a radiation-proof silver film of a high-precision micro-nano temperature sensor for near space detection and used as an electrode according to the invention;
wherein 101-the first part of the radiation-proof silver film, 102-the second part of the radiation-proof silver film and 103-the third part of the radiation-proof silver film.
FIG. 6 is an explosion diagram of a high-precision micro-nano circular structure temperature sensor for near space detection according to the invention;
Detailed Description
For better illustrating the objects and advantages of the present invention, the following description is provided in conjunction with the accompanying drawings and examples.
Example 1:
as shown in fig. 1, an embodiment of a high-precision micro-nano temperature sensor for detecting a proximity space includes: a power supply 1, a lead 2, a first electrode 3, a second electrode 4 and a sensing part 5;
as shown in fig. 2 and 5, the sensor unit 5 includes: the solar cell comprises a substrate 6, an insulating layer 7, a thermistor 8, a side radiation-proof silver film 9 and an upper surface radiation-proof silver film 10;
as shown in fig. 2 and 5, an insulating layer 7 is attached to the upper surface of the base 6, and a thermistor 8 is attached to the insulating layer 7;
as shown in fig. 2, in the embodiment, the substrate 6 is a sapphire material, is a rectangular parallelepiped, has a size of 1000 μm × 1000 μm × 500 μm, has a through hole 61 in the middle, and has upper and lower surfaces polished;
in the embodiment shown in fig. 3, the insulating layer 7 is made of silicon dioxide, and is formed on the upper surface of the substrate 6 by an inductively coupled plasma enhanced chemical vapor deposition method, and after the substrate 6 is etched, a suspended middle portion 71 is formed, the shape of the middle portion 71 is the same as that of the through hole 61 of the substrate 6, the shape of the outer ring portion 73 is the same as that of the middle portion 71, and the middle portion 71 is connected with the outer ring portion 73 through four micro bridges 72, and the size of the outer ring portion 73 is smaller than that of the through hole of the substrate 6, which is beneficial for heat insulation;
the insulating layer 7 is arranged between the substrate 6 and the thermistor 8, reduces heat transfer between the thermistor 8 and the substrate 6, and realizes electrical insulation;
in the embodiment shown in fig. 4, the thermistor 8 is a multi-bend serpentine platinum thin film, and is deposited and formed in the middle of the upper surface of the insulating layer by a direct-current magnetron sputtering process to increase the adhesive force;
the platinum film of the thermistor 8 is directly exposed in the air, so that the external temperature is better sensed, the sensor precision is improved, the heat dissipation is better, and the response time is prolonged;
the resistance value of the thermistor 8 is as shown in the formula (1):
wherein U is voltage, R is resistance, I is current, ρ is platinum film resistivity, k is platinum film resistance temperature coefficient, T is temperature, L is platinum film resistance length, S is platinum film resistance cross-sectional area, R is 0 The resistance value of the platinum film is 0 ℃;
the heat dissipation model of the platinum film of the thermistor 8 is shown in formula (2), and the larger the heat dissipation surface of the platinum film is, the more heat dissipation is facilitated;
Q＝a(t w -t 0 )F (2)
wherein Q is heat dissipation, a is heat transfer coefficient, and t is w Is the surface temperature, t, of the platinum film 0 The temperature is the ambient temperature, and F is the heat dissipation surface of the platinum film;
in the embodiment, the thickness of the platinum film of the thermistor 8 is 200nm, the width is 10 μm, and the resistance of the thermistor 8 is 120 Ω;
in the embodiment shown in fig. 5, the lateral radiation-proof silver film 9 is plated on the peripheral surface of the substrate 6, the upper radiation-proof silver film 10 is plated on the upper surface of the outer ring portion 73 of the insulating layer 7, and the prepared silver film has a thickness of 50nm;
the upper surface radiation protection silver film 10 is divided into three parts which are not connected with each other, a first part 101 of the radiation protection silver film is used as a first electrode 3, and a second part 102 of the radiation protection silver film is used as a second electrode 4; 103-a third portion of radiation protective silver film;
in the embodiment shown in fig. 1, the power supply 1 adopts a constant current source and adopts a four-wire connection method, and the first electrode 3 and the second electrode 4 are respectively connected with two ends of the platinum film of the thermistor 8 and form a loop with the power supply 1.
Example 2:
as shown in fig. 6, the structure and composition of embodiment 2 are completely the same as those of embodiment 1, the technical parameters of the power source 1, the lead 2, the first electrode 3 and the sensing element 5 are completely the same, the connection mode of the second electrode 4 and the sensing element 5 is completely the same, and embodiment 2 is different from embodiment 1 only in that: the thermistor 8 is spiral, and the inner ring and the outer ring of the insulating layer 7 are corresponding to the thermistor, and the through hole 61 of the substrate 6 is circular.
The above detailed description is further intended to illustrate the objects, technical solutions and advantages of the present invention, and it should be understood that the above detailed description is only an example of the present invention and should not be used to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. A high accuracy temperature sensor that receives a little for approaching space surveys which characterized in that: a microbridge structure is adopted, a platinum (Pt) resistor is used as a temperature measurement sensitive element, the size of the temperature measurement sensitive element is in the micro-nanometer level, and an anti-radiation coating is coated on the outer surface of a sensor, and the method specifically comprises the following steps: the device comprises a power supply (1), a lead (2), a first electrode (3), a second electrode (4) and a sensing component (5);
the sensing part (5) includes: the radiation-proof silver film comprises a substrate (6), an insulating layer (7), a thermistor (8) and a radiation-proof silver film;
the insulating layer (7) is attached to the upper surface of the substrate (6), and the thermistor (8) is attached to the insulating layer (7);
the substrate (6) is made of sapphire material and is a cuboid, a through hole is formed in the middle of the substrate, the upper surface and the lower surface of the substrate are polished, and the lower surface of the substrate is used as a fixed mounting surface;
after the insulating layer (7) is etched on the substrate (6), a middle part (71) of the suspended insulating layer (7) is formed, the shape of the middle part (71) is the same as that of a through hole (61) of the substrate (6), the shape of an outer ring part (73) is the same as that of the middle part (71), the middle part (71) is connected with the outer ring part (73) through four micro bridges (72), and the size of the outer ring part (73) is smaller than that of the through hole (61) of the substrate (6);
the thermistor (8) is a platinum film and is directly exposed in the air;
the resistance value of the thermistor (8) is as shown in formula (1), and the resistance value of the thermistor (8) is not less than 100 omega;
wherein U is voltage, R is resistance, I is current, ρ is platinum film resistivity, k is platinum film resistance temperature coefficient, T is temperature, L is platinum film resistance length, S is platinum film resistance cross-sectional area, R is 0 The resistance value of the platinum film is 0 ℃;
the heat dissipation model of the platinum film of the thermistor (8) is as shown in the formula (2), and the larger the surface of the platinum film is, the better the heat dissipation is;
Q＝a(t w -t 0 )F (2)
wherein Q is heat dissipation, a is heat transfer coefficient, and t w Is the surface temperature, t, of the platinum film 0 The ambient temperature is adopted, and F is the surface area of the platinum film;
depositing and forming a platinum film of the thermistor (8) at the middle position of the upper surface of the insulating layer (7) by a direct-current magnetron sputtering process;
the radiation-proof silver film is plated on the peripheral surface of the base body (6) and the upper surface of the outer ring part (73) of the insulating layer (7);
the radiation-proof silver film on the upper surface of the insulating layer (7) is divided into three parts which are not connected with each other, and the two parts are used as electrodes and are respectively connected with the two ends of the platinum film of the thermistor (8);
the power supply (1) is connected with the electrode formed by the radiation-proof silver film through a lead (2) to form a loop.
2. The high-precision micro-nano temperature sensor for the near space detection according to claim 1, characterized in that: the through-hole (61) of the base body (6) is preferably a circular or square hole.
3. The high-precision micro-nano temperature sensor for the near space detection according to claim 1, characterized in that: the insulating layer (7) is made of silicon dioxide material and is generated on the upper surface of the substrate (6) by an inductively coupled plasma enhanced chemical vapor deposition method.
4. The high-precision micro-nano temperature sensor for the near space detection according to claim 1, characterized in that: the thermistor (8) is in a multi-bend serpentine shape or a spiral shape.
5. The high-precision micro-nano temperature sensor for detecting the near space according to claim 1, which is characterized in that: the power supply (1) is a constant current source and adopts a four-wire connection method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211720337.0A CN115979448A (en) | 2022-12-30 | 2022-12-30 | High-precision micro-nano temperature sensor for near space detection |
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| CN202211720337.0A CN115979448A (en) | 2022-12-30 | 2022-12-30 | High-precision micro-nano temperature sensor for near space detection |
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| CN115979448A true CN115979448A (en) | 2023-04-18 |
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| CN202211720337.0A Pending CN115979448A (en) | 2022-12-30 | 2022-12-30 | High-precision micro-nano temperature sensor for near space detection |
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