CN115976519B - Chromium etching solution for stripping development and application thereof - Google Patents
Chromium etching solution for stripping development and application thereof Download PDFInfo
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- CN115976519B CN115976519B CN202210958473.7A CN202210958473A CN115976519B CN 115976519 B CN115976519 B CN 115976519B CN 202210958473 A CN202210958473 A CN 202210958473A CN 115976519 B CN115976519 B CN 115976519B
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- stripping
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- 238000005530 etching Methods 0.000 title claims abstract description 73
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 37
- 239000011651 chromium Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002270 dispersing agent Substances 0.000 claims abstract description 11
- 239000004480 active ingredient Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 9
- 239000011247 coating layer Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 239000010935 stainless steel Substances 0.000 claims abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 35
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 13
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 239000004115 Sodium Silicate Substances 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 239000012286 potassium permanganate Substances 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 12
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 12
- -1 sodium alkyl sulfonate Chemical group 0.000 claims description 10
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 9
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 9
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 claims description 9
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- PIIRYSWVJSPXMW-UHFFFAOYSA-N 1-octyl-4-(4-octylphenoxy)benzene Chemical compound C1=CC(CCCCCCCC)=CC=C1OC1=CC=C(CCCCCCCC)C=C1 PIIRYSWVJSPXMW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- YDEXUEFDPVHGHE-GGMCWBHBSA-L disodium;(2r)-3-(2-hydroxy-3-methoxyphenyl)-2-[2-methoxy-4-(3-sulfonatopropyl)phenoxy]propane-1-sulfonate Chemical compound [Na+].[Na+].COC1=CC=CC(C[C@H](CS([O-])(=O)=O)OC=2C(=CC(CCCS([O-])(=O)=O)=CC=2)OC)=C1O YDEXUEFDPVHGHE-GGMCWBHBSA-L 0.000 claims description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 2
- IAAKNVCARVEIFS-UHFFFAOYSA-M sodium;4-hydroxynaphthalene-1-sulfonate Chemical compound [Na+].C1=CC=C2C(O)=CC=C(S([O-])(=O)=O)C2=C1 IAAKNVCARVEIFS-UHFFFAOYSA-M 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 11
- 238000000576 coating method Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000009835 boiling Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000012466 permeate Substances 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000009499 grossing Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229940098779 methanesulfonic acid Drugs 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229960000583 acetic acid Drugs 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NSTREUWFTAOOKS-UHFFFAOYSA-N 2-fluorobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1F NSTREUWFTAOOKS-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 125000005227 alkyl sulfonate group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- JBIROUFYLSSYDX-UHFFFAOYSA-M benzododecinium chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 JBIROUFYLSSYDX-UHFFFAOYSA-M 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- KNWMJZSWRPRLNC-UHFFFAOYSA-N potassium cerium(3+) tetranitrate Chemical compound [K+].[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O KNWMJZSWRPRLNC-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- HXXUSCXHPXJSES-UHFFFAOYSA-N sodium cerium(3+) tetranitrate Chemical compound [N+](=O)([O-])[O-].[Na+].[Ce+3].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] HXXUSCXHPXJSES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a chromium etching solution for stripping development, which is prepared by mixing a stripping active ingredient, a metal compound, a long-chain compound, a dispersing agent, an auxiliary agent and deionized water, wherein the etching solution can effectively soften and dissolve a chromium coating, and the etching liquid can permeate into fine pores between the plating layer and the workpiece, further promotes the separation of the plating layer and the workpiece, does not influence the etching effect on the plating layer and the workpiece, and simultaneously has obviously improved etching precision and etching uniformity control on the workpiece, and the obtained product has good effect. The etching solution has the advantages of extremely low corrosiveness to substrate materials, accelerating etching speed, avoiding boiling and splashing and intense heat release in the etching process, along with good stability and long validity period, and can be widely applied to the yellow light manufacturing process of various substrate coating layers such as stainless steel, PET, AC, PC, glass and the like.
Description
Technical Field
The invention relates to the field of preparation of etching solutions, and in particular relates to a chromium etching solution for deplating development and application thereof.
Background
In order to enhance the adhesion between the substrate material and the base film, a layer of chromium film is plated on the surface of the substrate material, and the requirements of different products on the film coating layer are different, so that the later chromium film etching treatment is affected, and the influence on the pattern precision and the precision uniformity of the chromium film mask is very high. The coating layer which does not meet the requirements needs to be subjected to deplating treatment and then etched, so that the cost is reduced, but the etching stability and uniformity price of the chromium etching solution are poor, and the pattern accuracy is low.
Patent CN201611258335.9 discloses a deplating solution, surfactant, etchant, cosolvent, oxidant, water, which can remove hydrophobic oleophobic coating and anodic oxide film on the surface of aluminum alloy shell at an opening degree, realize the reprocessing or recoating of workpiece, reduce cost, but the technology can not explain the etching problem. Patent CN202010876475.2 provides a chromium metal etching solution and a method for etching a chromium film and a chromium-nickel film, which uses ceric ammonium nitrate, perchloric acid, organic benzenesulfonic acid or derivatives thereof with no oxidizing property, or their mixtures, and water as the etching solution for the chromium metal, and can produce stable and uniform etching, realize good etching pattern effect control, and higher etching pattern precision, but cannot meet the requirements of removing the plating layer and performing re-etching processing.
Disclosure of Invention
In order to solve the above problems, a first aspect of the present invention provides a chromium etching solution for stripping development, which is prepared from the following raw materials in percentage by weight: 2 to 10 percent of deplating active ingredient, 0.2 to 2 percent of metal compound, 0.5 to 3 percent of long-chain compound, 0.8 to 4.5 percent of dispersing agent, 1 to 5 percent of auxiliary agent and the balance of deionized water.
In some preferred embodiments, the stripping active is selected from at least one of potassium permanganate, nitric acid, hydrofluoric acid, sodium hydroxide, potassium hydroxide, methylsulfonic acid, carbonate, meta-aluminate, sulfite, sodium silicate, phosphate; preferably, the deplating active ingredients are potassium permanganate, nitric acid, methylsulfonic acid and sodium silicate.
In some preferred embodiments, the weight ratio of potassium permanganate, nitric acid, methanesulfonic acid, and sodium silicate is (2-4): (1-2.5): 1: (1-2); preferably, the weight ratio of potassium permanganate, nitric acid, methanesulfonic acid and sodium silicate is 3.4:1.3:1:2.2.
The application can increase the dissolution of the substrate coating layer and the glass speed and increase the use convenience of the etching solution by adding the deplating active ingredient. The inventor finds that the system can also show the effect of etching solution by adding potassium permanganate, nitric acid, methanesulfonic acid and sodium silicate, and has small corrosiveness to the substrate. The possible reasons are presumed to be that the potassium permanganate and the nitric acid have strong oxidizing property, can react with metal chromium in the chromium plating layer, can promote ionization of a solvent to generate more hydroxide ions under the action of the methylsulfonic acid and the sodium silicate, increase the pH value in a system, promote further complexation with the chromium, play a certain corrosion inhibition role, weaken the corrosion of a strong oxidizing substance on a substrate substance and improve the etching effect. The inventors have unexpectedly found that when the weight ratio of potassium permanganate, nitric acid, methanesulfonic acid and sodium silicate is 3.4:1.3:1:2.2, the chromium coating of the obtained chromium etching solution has good stripping effect, high etching speed and high etching precision.
In some preferred embodiments, the metal compound is selected from at least one of strontium oxide, yttrium oxide, lanthanum chloride, ammonium cerium nitrate, cerium oxide, sodium cerium nitrate, potassium cerium nitrate; preferably, the metal compounds are ceric ammonium nitrate and lanthanum chloride.
In some preferred embodiments, the mass ratio of the ammonium cerium nitrate to the lanthanum chloride is (1-2): 1, a step of; preferably, the mass ratio of the ammonium cerium nitrate to the lanthanum chloride is 1.5:1.
In some preferred embodiments, the long chain compound is selected from at least one of sodium alpha-alkenyl sulfonate, potassium alkylphenol ethoxylate phosphate, sodium secondary alkyl sulfonate, alkyl phosphate, C8-10 alcohol polyoxyethylene ether, dodecyldimethylbenzyl ammonium chloride, polyvinylpyrrolidone; preferably, the long-chain compound is secondary sodium alkyl sulfonate and C8-10 alcohol polyoxyethylene ether.
In some preferred embodiments, the mass ratio of the secondary sodium alkyl sulfonate to the C8-10 alcohol polyoxyethylene ether is 1: (0.85-2.1); preferably, the mass ratio of the secondary alkyl sodium sulfonate to the C8-10 alcohol polyoxyethylene ether is 1:35.
In some preferred embodiments, the secondary sodium alkyl sulfonate has a viscosity of 5 to 15 mPa-s at 25 ℃ and an active content of 55 to 70%; preferably, the viscosity of the secondary sodium alkyl sulfonate at 25 ℃ is 7 mPas and the active substance content is 60%.
In some preferred embodiments, the C8-10 alcohol polyoxyethylene ether has a hydroxyl value of 200 to 300mgKOH/g and a 1% aqueous solution pH of 4.5 to 7.0; preferably, the hydroxyl value of the C8-10 alcohol polyoxyethylene ether is 220-260 mgKOH/g, and the pH of the 1% aqueous solution is 5-7.0.
In some preferred embodiments, the dispersant is selected from at least one of sodium dodecyl benzene sulfonate, sodium naphthol sulfonate, polyethylene glycol monooctylphenyl ether, sodium lignin sulfonate, diglycolamine, diethylene glycol diethyl ether, diethylene glycol butyl ether, polyethylene glycol, polyimide; preferably, the dispersant is diglycolamine and diethylene glycol butyl ether.
In some preferred embodiments, the mass ratio of diglycolamine to diethylene glycol butyl ether is (0.75 to 1.5): 1, a step of; preferably, the mass ratio of the diglycolamine to the diethylene glycol butyl ether is 0.95:1.
In some preferred embodiments, the auxiliary agent is selected from at least one of hydrochloric acid, glacial acetic acid, perchloric acid, o-fluorobenzoic acid, hydrogen peroxide, sulfamic acid, citric acid; preferably, the auxiliary agent is glacial acetic acid.
The using method of the chromium etching solution comprises the following steps: placing the chromium etching solution into a cleaned 304 stainless steel or plastic tank, stirring uniformly, then placing the product to be treated into the tank, soaking for 10-30s at normal temperature, and continuing etching.
The second aspect of the invention provides an application of chromium etching solution for stripping development, which is used for etching development of coating layers of stainless steel, PET, AC, PC and glass substrates.
Compared with the prior art, the invention has the following beneficial effects:
(1) According to the application, the chromium etching solution for stripping development is prepared by mixing the stripping active ingredient, the metal compound, the long-chain compound, the dispersing agent, the auxiliary agent and the deionized water, the etching solution can effectively soften and dissolve the chromium coating, and can permeate into the micro pores between the coating and the workpiece, so that the separation of the coating and the workpiece is further promoted, the etching effect on the workpiece is not influenced, and meanwhile, the etching precision and the etching uniformity of the workpiece are obviously improved by the etching solution, and the obtained product has good effect.
(2) The chromium etching solution has extremely low corrosiveness to substrate materials, accelerates the etching speed, does not generate boiling splash and intense heat release during the etching process, has good stability and long validity period, and can be widely used in yellow light manufacturing process of various substrate coating layers such as stainless steel, PET, AC, PC, glass and the like.
Detailed Description
Example 1
1. The chromium etching solution for deplating development comprises, by weight, 5% of deplating active ingredient, 0.8% of metal compound, 1.5% of long-chain compound, 2.5% of dispersing agent, 4% of auxiliary agent and the balance of deionized water;
The deplating active ingredients are potassium permanganate, nitric acid, methylsulfonic acid and sodium silicate.
The weight ratio of the potassium permanganate, the nitric acid, the methylsulfonic acid and the sodium silicate is 3.4:1.3:1:2.2.
The metal compound is ceric ammonium nitrate and lanthanum chloride.
The mass ratio of the ammonium cerium nitrate to the lanthanum chloride is 1.5:1.
The long-chain compound is secondary sodium alkyl sulfonate and C8-10 alcohol polyoxyethylene ether.
The mass ratio of the secondary alkyl sodium sulfonate to the C8-10 alcohol polyoxyethylene ether is 1:35.
The viscosity of the secondary sodium alkyl sulfonate at 25 ℃ was 7 mPas and the active substance content was 60% (Shandong national chemical Co., ltd.).
The hydroxyl value of the C8-10 alcohol polyoxyethylene ether is 220-260 mgKOH/g, and the pH of a 1% aqueous solution is 5-7.0 (OE-2 in the sea-Ann petrochemical plant of Jiangsu province).
The dispersing agent is diglycolamine and diethylene glycol butyl ether.
The mass ratio of the diglycolamine to the diethylene glycol butyl ether is 0.95:1.
The auxiliary agent is glacial acetic acid.
The using method of the chromium etching solution comprises the following steps: placing the chromium etching solution into a cleaned 304 stainless steel or plastic tank, stirring uniformly, then placing the product to be treated into the tank, soaking for 15s at normal temperature, and continuing etching.
2. The application of chromium etching liquid for deplating development is used in etching of coating layer of stainless steel, PET, AC, PC and glass substrate.
Example 2
1. The difference between the chromium etching solution for stripping development and example 1 is that:
The preparation raw materials comprise 6.5 percent of deplating active ingredient, 0.7 percent of metal compound, 1.7 percent of long-chain compound, 2.6 percent of dispersing agent, 4 percent of auxiliary agent and the balance of deionized water according to weight percentage;
2. An application of chromium etching solution for stripping development is the same as in example 1.
Comparative example 1
1. The difference between the chromium etching solution for stripping development and example 1 is that:
the weight ratio of the potassium permanganate, the nitric acid, the methylsulfonic acid and the sodium silicate is 1.5:1.3:1:2.2.
2. An application of chromium etching solution for stripping development is the same as in example 1.
Comparative example 2
1. The difference between the chromium etching solution for stripping development and example 1 is that:
The mass ratio of the ammonium cerium nitrate to the lanthanum chloride is 3:1.
2. An application of chromium etching solution for stripping development is the same as in example 1.
Comparative example 3
1. The difference between the chromium etching solution for stripping development and example 1 is that:
The hydroxyl value of the C8-10 alcohol polyoxyethylene ether is 160-190 mgKOH/g, the pH of 1% aqueous solution is 5-7.0 (Jiangsu province sea An petrochemical plant, OE-4)
2. An application of chromium etching solution for stripping development is the same as in example 1.
Performance testing
1. Physical and chemical properties: the chromium etching solution obtained in example 1 was tested.
Appearance: a pale yellow liquid;
Specific gravity: 1.08-1.10g/mL;
pH value: 3-5 (10% aqueous solution);
Flammability: is not burnt.
2. Etching rate:
A chromium metal film was prepared on a glass substrate by a sputtering method, and after the film thickness reached 450nm, a resist coating was applied to the chromium metal film to obtain a resist coating pattern. The substrate was immersed in the etching solutions obtained in examples and comparative examples at 50℃for 15 seconds, then washed with water and dried, and after the resist coating was peeled off, the etching amount was measured by a stylus type level difference meter, and the etching rate (unit nm/min) was calculated according to the following formula: etch rate = etch amount/etch time.
3. Surface smoothing and penetration phenomena of etched facets:
A chromium metal film was formed on a glass substrate by sputtering to a film thickness of 450nm. A resist coating layer was coated on the chromium metal film to obtain a resist coating pattern. The substrate was etched at 50 ℃ for 1.2 times the etching time calculated from the etching rate, washed with water and dried after etching, and after the resist coating was peeled off, the surface smoothing and penetration phenomenon of the etched surface of the aluminum film was observed by an electron microscope (SEM).
The test results are shown in table 1 below.
Table 1 results of performance testing of examples and comparative examples
| Example 1 | Example 2 | Comparative example 1 | Comparative example 2 | Comparative example 3 | |
| Etching rate (nm/min) | 260-265 | 260-265 | 180-190 | 190-210 | 220-225 |
| Surface smoothing | Smoothing | Smoothing | Non-smooth | Non-smooth | Non-smooth |
| Phenomenon of penetration | No penetration | No penetration | Infiltration | Impermeable to | Infiltration |
Claims (4)
1. The chromium etching solution for stripping development is characterized by comprising the following preparation raw materials in percentage by weight: 2 to 10 percent of deplating active ingredient, 0.2 to 2 percent of metal compound, 0.5 to 3 percent of long-chain compound, 0.8 to 4.5 percent of dispersing agent, 1 to 5 percent of auxiliary agent and the balance of deionized water;
the deplating active ingredients are potassium permanganate, nitric acid, methylsulfonic acid and sodium silicate;
The weight ratio of the potassium permanganate, the nitric acid, the methylsulfonic acid and the sodium silicate is (2-4): (1-2.5): 1: (1-2); the metal compound is ceric ammonium nitrate and lanthanum chloride;
The mass ratio of the ammonium cerium nitrate to the lanthanum chloride is (1-2): 1, a step of;
The long-chain compound is secondary sodium alkyl sulfonate and C8-10 alcohol polyoxyethylene ether;
the mass ratio of the secondary alkyl sodium sulfonate to the C8-10 alcohol polyoxyethylene ether is 1: (0.85-2.1);
The hydroxyl value of the C8-10 alcohol polyoxyethylene ether is 200-300 mgKOH/g, and the pH of the 1% aqueous solution is 4.5-7.0.
2. The chrome etching solution for stripping development according to claim 1, wherein the dispersant is at least one selected from sodium dodecyl benzene sulfonate, sodium naphthol sulfonate, polyethylene glycol monooctylphenyl ether, sodium lignin sulfonate, diglycolamine, diethylene glycol diethyl ether, diethylene glycol butyl ether, polyethylene glycol and polyimide.
3. The chrome etching solution for stripping development according to claim 1, wherein the dispersing agent is diglycolamine and diethylene glycol butyl ether;
The mass ratio of the diglycolamine to the diethylene glycol butyl ether is (0.75-1.5): 1.
4. Use of a chromium etching solution for stripping development according to any of claims 1-3, characterized in that it is used for etching development of stainless steel, PET, AC, PC, glass substrate coating layers.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1896313A (en) * | 2005-07-11 | 2007-01-17 | 佛山市顺德区汉达精密电子科技有限公司 | Decoating liquid |
| CN112048719A (en) * | 2020-08-27 | 2020-12-08 | 江苏中德电子材料科技有限公司 | Chromium metal etching solution and method for etching chromium film and chromium-nickel film |
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| JP3415127B2 (en) * | 2000-09-20 | 2003-06-09 | ザ・インクテック株式会社 | Chrome etching solution |
| SG11202001057VA (en) * | 2017-08-22 | 2020-03-30 | Fujifilm Electronic Materials Usa Inc | Cleaning compositions |
| EP3850123B1 (en) * | 2018-09-12 | 2024-01-03 | FUJIFILM Electronic Materials U.S.A, Inc. | Etching compositions |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1896313A (en) * | 2005-07-11 | 2007-01-17 | 佛山市顺德区汉达精密电子科技有限公司 | Decoating liquid |
| CN112048719A (en) * | 2020-08-27 | 2020-12-08 | 江苏中德电子材料科技有限公司 | Chromium metal etching solution and method for etching chromium film and chromium-nickel film |
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